Lecture Notes

2
Introduction to Power Semiconductor Devices

Prepared by
Dr. Oday A Ahmed
Website: https://odayahmeduot.wordpress.com
Email: 30205@uotechnology.edu.iq

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Lecture Note 2: Introduction to Power Semiconductor Devices
Instructure: Dr. Oday A Ahmed

Contents of this Lecture:

► Main function of Power Semiconductor Devices (PSD)
► Ideal and practical PSDs
► Cooling of PSDs

Main function of PSD

Power semiconductor devices constitute the heart of modern power electronic
apparatus. The main function of the power semiconductor devices (PSD) in the
power converter system are used as on/off switches to control the energy transfer
between the source and the load.
The Basic representation of the power semiconductor device can be represented
as a traditional switch as shown in Fig.2.1.

Fig.2.1

The difference between ideal switch and practical switch

As mentioned before, PSDs use as switches in PE converters. The switch in
practical has different features in practical over its features in ideal case. This can
be recognize as described below:

Ideal Switch
If the PSD considered working as ideal switch, then it should be:
■ When switch is OFF, i =0 and -∞≤v≤+∞ which implies that PON=0

■ When switch is ON, V =0 and -∞≤ I ≤+∞ which implies that PON=0

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Lecture Note 2: Introduction to Power Semiconductor Devices
Instructure: Dr. Oday A Ahmed

It should be possible to easily turn the switch ON and OFF by applying an

appropriate control signal.

Control Signal

Features of Ideal Switch

 The power required to keep the switch in a
particular state, or to switch it ON/OFF should
be infinitesimally small.
 Should be able to change state instantaneously
which implies that trise=0, tfall=0 and PSW=0 (see
Fig.2.2)
 Should be able to withstand infinite temperature
that means that its power handling capability is
infinite. Requires very low thermal impedance
from internal junction to ambient, RJA=0, so that Fig.2.2
it transmits heat easily to the ambient
 Should be able to withstand infinite value of di/dt during turn ON and infinite
value of dv/dt during turn OFF.
 Current limitless when on-either direction.
 No limit on amount of voltage across switch when off (Blocking voltage
infinite (forward or reverse)).
In real life, there exists nothing like that!

Practical Switch

Although Semiconductor Industry has produced amazing devices, the “real

world” switch is not ideal.
 Limited conduction current when the switch on,
 Limited blocking voltage when the switch is in the OFF state
 Limited switching speed that caused by the finite turn-on and turn-off times
(ton_rise≠0, toff_fall≠0)

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Lecture Note 2: Introduction to Power Semiconductor Devices
Instructure: Dr. Oday A Ahmed

 Real world (Semiconductor) switches are charge driven

 Finite, nonzero on-state and off-state resistances (There is a I2R loss when
ON and some leakage when OFF (very small), as shown in Fig.2.4.

Switching Losses in the PSD

A real switch needs a finite tonrise for ON switching and toff_fall for OFF switching,
as shown in Fig.2.3. These finite switching times have two major consequences:

► Limits the highest repetitive switching frequencies possible

► Introduce additional power dissipation in the switches themselves, which
can be called as thermal losses or switching losses)

So, to find the switching losses the following circuit that provided soft load
(without L) can be used as shown in Fig.2.3.

Fig.2.4
Hence, it can be seen there are three losses types are dissipated in the PSD:
1) Conduction losses
2) Blocking losses
3) Switching losses

Forward or On-state or conduction loss, which is given by the product of

forward voltage drop and forward current, which is dependent on the internal on
resistance of the device

Blocking or off-state loss, which is dependent on the leakage current inside the
PSD. (see next lecture)

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Lecture Note 2: Introduction to Power Semiconductor Devices
Instructure: Dr. Oday A Ahmed

Switching losses which are the instantaneous power dissipated in the PSD during
the transition periods due to the ton_rise and toff_fall that are ≠0 due to the parasitic
elements of PSD.
Switching Losses calculation:
The total average power loss over a time interval Ts is:
Total power loss= Conduction Losses+ Switching Losses

Cut-off
region
Linear Linear
Region Saturation region Region

Fig.2.4

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Lecture Note 2: Introduction to Power Semiconductor Devices
Instructure: Dr. Oday A Ahmed

The total energy J dissipated (dissipated as thermal losses) in the switch in one
switching cycle Ts is given by the sum of the areas under the power waveform
during ton and toff, as shown in the figure 2.4:
The average switching power loss is therefore proportional to the switching
frequency fs and is given in watt as:
𝑃𝑆𝑤 = 𝑓𝑠 ×𝐽
It can be seen as the fs increase, this results in PSwincreasing. (what this means?)
It can also be seen from fig. 2.4 that this power consumes by the PSD since the
PSD is working as a load (see fig.2.3)
The calculation of switching power losses can be obtained as shown below:
First we have to find the function of the current iSW and vSW during the transition
periods:

𝑡
(𝐼𝑂𝑁 − 𝐼𝑂𝑓𝑓 ) + 𝐼𝑂𝑓𝑓 0 ≤ 𝑡 ≤ 𝑡𝑜𝑛
𝑡𝑜𝑛

𝑖𝑠𝑤 (𝑡) = 𝐼𝑂𝑁 𝑡𝑜𝑛 ≤ 𝑡 ≤ (𝑇𝑠 − 𝑡𝑜𝑓𝑓 ) 𝑒𝑞(1)

𝑡 − 𝑇𝑠
− (𝐼𝑂𝑁 − 𝐼𝑂𝑓𝑓 ) + 𝐼𝑂𝑓𝑓 (𝑇𝑠 − 𝑡𝑜𝑓𝑓 ) ≤ 𝑡 ≤ 𝑇𝑠
{ 𝑡𝑜𝑓𝑓

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Lecture Note 2: Introduction to Power Semiconductor Devices
Instructure: Dr. Oday A Ahmed

𝑡 − 𝑡𝑜𝑛
− (𝑉𝑂𝑓𝑓 − 𝑉𝑂𝑛 ) + 𝑉𝑂𝑁 0 ≤ 𝑡 ≤ 𝑡𝑜𝑛
𝑡𝑜𝑛

𝑣𝑠𝑤 = 𝑉𝑂𝑁 𝑡𝑜𝑛 ≤ 𝑡 ≤ (𝑇𝑠 − 𝑡𝑜𝑓𝑓 ) 𝑒𝑞(2)

𝑡 − (𝑇𝑠 − 𝑡𝑜𝑓𝑓 )
− (𝑉𝑂𝑓𝑓 − 𝑉𝑂𝑛 ) + 𝑉𝑂𝑁 (𝑇𝑠 − 𝑡𝑜𝑓𝑓 ) ≤ 𝑡 ≤ 𝑇𝑠
{ 𝑡𝑜𝑓𝑓
The instantaneous switching power is equal to p(t)=Vsw(t)*isw(t). By assuming the
Ioff (leakage current) and VON = 0 (forward voltage), then:

𝑝𝑠𝑤 (𝑡)
𝐼𝑂𝑁 𝑉𝑂𝑓𝑓
𝑝(𝑡)1 = − 2
(𝑡 − 𝑡𝑜𝑛 )𝑡 0 ≤ 𝑡 ≤ 𝑡𝑜𝑛
𝑡𝑜𝑛

𝐼𝑂𝑁 𝑉𝑂𝑓𝑓
𝑝(𝑡)2 = − 2 (𝑡 − (𝑇𝑠 − 𝑡𝑜𝑓𝑓 ))(𝑡 − 𝑇𝑠 ) (𝑇𝑠 − 𝑡𝑜𝑓𝑓 ) ≤ 𝑡 ≤ 𝑇𝑠
{ 𝑡𝑜𝑓𝑓

The average switching power loss over one cycle can be given as:
1 𝑇𝑠
𝑝𝑎𝑣𝑒 = ∫ 𝑝(𝑡)𝑑𝑡
𝑇𝑠 0

1 𝑡𝑜𝑛 𝑇𝑠
𝑃𝑎𝑣𝑒 = [∫ 𝑝(𝑡)1𝑑𝑡 + ∫ 𝑝(𝑡)2 𝑑𝑡]
𝑇𝑠 0 𝑇𝑠 −𝑡𝑜𝑓𝑓

𝐼𝑂𝑁 𝑉𝑂𝑓𝑓
𝑃𝑎𝑣𝑒 = (𝑡𝑜𝑛 + 𝑡𝑜𝑓𝑓 )
6𝑇𝑠
Where:
Psw= Switching power loss in watt
ION= Forward Current in Amps.
VOFF= Blocking voltage in volt
fs= switching frequency in Hz.

From equations (1) and (2), the average conduction loss can be found as:

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Lecture Note 2: Introduction to Power Semiconductor Devices
Instructure: Dr. Oday A Ahmed

𝑃𝑐 = (𝐼𝑂𝑁 𝑉𝑂𝑁 )𝑓𝑠 . (𝑇𝑠 − (𝑡𝑜𝑛 + 𝑡𝑜𝑓𝑓 )

Pc= Conduction power loss in watt
ION= Maximum Forward Current in Amps.
VON= Maximum Forward voltage in volt

These losses converted into thermal energy i.e. heat inside the PSD body which
results in increasing the device temperature. Hence, dissipate the heat to the
ambient atmosphere outside is necessary to remain the PSD in the safe
operating area using heat sink as shown below:

The device has the ability to

conduct and transfer heat from the
junction (with temperature Tj) to
ambient (with temperature Ta)

Junction of device to the Tj

Tj
case
𝑅𝑗𝑏

𝑅𝑏𝑎
Tj

Ambient

Classification of PSD
NOTE; in general, the power semiconductor devices classified into three switch
types:
■ Uncontrolled: Diodes (a switch controlled by the power circuit)

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Lecture Note 2: Introduction to Power Semiconductor Devices
Instructure: Dr. Oday A Ahmed

■ Semi-controlled:
Thyristors, SCR (can be
switched on by a signal but
only the power circuit can
turn it off)

■ Fully Controlled:
Transistors, GTO, SIT,
MCT (can be switched
on and off by a signal by
applying positive
signal, or by applying
positive and negative
pulses like a GTO)

Device Choices
Which of the power switches is chosen will be determined by cost, availability of
rating to suit the requirement and the ease with which it can be turned 'on' and
'off'.

Fig. 2.5 shows the range of using PSDs in terms of voltage, current and switching
frequency.

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Lecture Note 2: Introduction to Power Semiconductor Devices
Instructure: Dr. Oday A Ahmed

Fig.2.5
 The power MOSFET has the advantages of a majority carrier device, so it
can achieve a very high operating frequency, but it cannot be used with
high voltages.
 Compared to the MOSFET, the operating frequency of the IGBT is
relatively low (usually not higher than 50 kHz).
 At very high power levels, a thyristor-based device (e.g., a SCR, a GTO,
a MCT, etc.) is still the only choice.

Note: By placing several devices in parallel, it is possible to increase the current

rating of a switch