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Rej03g1903 Rjk03e1dnsds
Rej03g1903 Rjk03e1dnsds
RJK03E1DNS
REJ03G1903-0200
Silicon N Channel Power MOS FET Rev.2.00
Power Switching Apr 06, 2010
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 5.3 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
4 1, 2, 3 Source
4 3 2 1 G 4 Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 A VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 A VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on) — 5.3 6.9 m ID = 12.5 A, VGS = 10 V Note4
resistance RDS(on) — 7.0 9.8 m ID = 12.5 A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| — 48 — S ID = 12.5 A, VDS = 5 V Note4
Input capacitance Ciss — 1640 2300 pF VDS = 10 V
Output capacitance Coss — 220 — pF VGS = 0
Reverse transfer capacitance Crss — 113 — pF f = 1 MHz
Gate Resistance Rg — 1.0 2.2
Total gate charge Qg — 10.7 — nC VDD = 10 V
Gate to source charge Qgs — 4.9 — nC VGS = 4.5 V
Gate to drain charge Qgd — 2.5 — nC ID = 25 A
Turn-on delay time td(on) — 9.4 — ns VGS = 10 V, ID = 12.5 A
Rise time tr — 4.5 — ns VDD 10 V
Turn-off delay time td(off) — 36 — ns RL = 0.8
Fall time tf — 5.1 — ns Rg = 4.7
Body–drain diode forward voltage VDF — 0.84 1.10 V IF = 25 A, VGS = 0 Note4
Body–drain diode reverse recovery trr — 15 — ns IF = 25 A, VGS = 0
time diF/ dt = 100 A/ s
Notes: 4. Pulse test
Main Characteristics
1
m
s
10 10
PW = 10 ms
Operation in
DC
5 1 this area is
Op
limited by RDS(on)
e
Tc = 25 °C
ra t
io n
0.1 1 shot Pulse
0 50 100 150 200 0.1 1 10 100
3.0 V
30 30
20 2.8 V 20
10 10 25°C
Tc = 75°C
VGS = 2.6 V
–25°C
0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
200 100
Drain to Source Saturation Voltage
VDS(on) (mV)
150 30
ID =10 A 10 V
50 3
5A
2A
1
0 4 8 12 16 20 1 3 10 30 100 300 1000
Capacitance C (pF)
1000 Ciss
ID = 2 A, 5 A, 10 A
12
300
VGS = 4.5 V
8
Coss
100
Crss
4 2 A, 5 A, 10 A
10 V 30 VGS = 0
f = 1 MHz
0 10
–25 0 25 50 75 100 125 150 0 10 20 30
ID = 25 A
Gate to Source Voltage VGS (V)
VDD = 25 V
30 10 V 12 30
VDS
20 8 20
VGS = 0, –5 V
10 VDD = 25 V 4 10
10 V
0 0
0 8 16 24 32 40 0 0.4 0.8 1.2 1.6 2.0
20
16
12
0
25 50 75 100 125 150
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
PDM PW
2 D=
0.03 0.0 T
0 1 lse
0. pu PW
h ot T
1s
0.01
1m 10 m 100 m 1 10
VDSS
1
EAR = L • IAP2 •
L 2 VDSS – VDD
VDS
Monitor
IAP V(BR)DSS
Monitor
IAP
Rg D. U. T VDD VDS
ID
Vin
15 V
VDD
0
td(on) tr td(off) tf
Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
HWSON-8 P-HWSON8-2.9x3.1-0.65 PWSN0008JB-A ⎯ 0.022g
+0.15
−0.1
3.3 ± 0.1 0.8 Max 2.25 ± 0.2
0.4
1.55 ± 0.2
3.3 ± 0.1
2.9 ± 0.1
0.1 Min (2.55)
+0.15
−0.1
0.32 ± 0.08
0.575 Typ 0.65 Typ 0.22 Typ
0.4
3.1 ± 0.1
Stand-off
0.04Max
0Min
Ordering Information
Part No. Quantity Shipping Container
RJK03E1DNS-00-J5 5000 pcs Taping