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Synthesis Lectures on
Materials and Optics
John X. J. Zhang
Plasmonic MEMS
Synthesis Lectures on Materials and Optics
This series publishes concise books on topics that include advanced and state-of-the-art
methods to understand and develop materials for optics. Leading experts on the subject
present and discuss both classical and new wave theory, techniques, and interdisciplinary
applications in the field. Optical materials play an integral role in the development of
numerous advances in areas from communications to sensors to photonics and more, and
this series discusses a broad range of topics and principles in condensed matter physics,
materials science, chemistry, and electrical engineering.
John X. J. Zhang
Plasmonic MEMS
John X. J. Zhang
Dartmouth College
Hanover, NH, USA
© The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerland AG
2023
This work is subject to copyright. All rights are solely and exclusively licensed by the Publisher, whether the whole
or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation,
broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage
and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or
hereafter developed.
The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does
not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective
laws and regulations and therefore free for general use.
The publisher, the authors, and the editors are safe to assume that the advice and information in this book are
believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give
a warranty, expressed or implied, with respect to the material contained herein or for any errors or omissions that
may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and
institutional affiliations.
This Springer imprint is published by the registered company Springer Nature Switzerland AG
The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
Preface
The ability to manipulate light beyond traditional diffraction limit at nanoscale physical
dimensions is driving the rapid development of nanophotonics. Major developments in
theoretical modeling, design, simulations, robust, and reliable nanofabrication techniques
are responsible for the variety of emerging applications of nanophotonics from comput-
ing, communication to biomedical sensing and imaging. The rapidly growing field of
plasmonics, as a subsection of nanophotonics, deals with confining optical energy into
dimensions far below the diffraction limit. Surface plasmons, collective oscillations of the
conduction electrons, as a building block of plasmonics have found large applications in
label-free biosensing, molecular-specific imaging, and photothermal therapy of cancer.
Recent years have seen an exciting and gradually emerging field of “Plasmonic
MEMS”, which attempts to combine plasmonics with Microelectromechanical Sys-
tem (MEMS) technology towards achieving remarkably enhanced system performance.
Progress and improvements in Optical MEMS in the past two decades have led to
a variety of miniaturized movable and tunable mirrors, lenses, filters, and other opti-
cal structures. Plasmonic MEMS provides a new set of perspectives and design tools
through in-depth coupling of physics and chemistry at surfaces and interfaces with multi-
scale engineering, which has great interdisciplinary appeal, attracting researchers from
fields as diverse as electrical engineering, mechanical engineering, optics, biochemistry,
biomedical engineering, and biology towards new system designs.
Our intention in creating this book is to cover the key topics in the emerging field
of plasmonic MEMS, with the emphasis on the practical aspects of this area. Extended
readings can be referred to many comprehensive and well-written textbooks on electro-
magnetic waves, nanophotonics, and plasmonics. However, most of these literatures are
lengthy and lack the focus needed for thoroughly grasp on plasmonic micromachining
and MEMS. This handbook is organized in six chapters that reflect the current status
of the evolving scientific field. Chapter 1 introduces the main framework of plasmonic
MEMS and overviews the introductory concepts in plasmonics and MEMS along with
the status of the field and the existing challenges. Chapter 2 describes the basic foun-
dations of plasmonic MEMS. An abbreviated overview of the basic physics and devices
v
vi Preface
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 MEMS and Optical MEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Plasmonic MEMS: A Frontier of Photonic Devices . . . . . . . . . . . . . . . . . . . 6
1.3 Status of the Field . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1.4 Existing Challenges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2 Theoretical Foundations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2.1 Maxwell’s Equations and Electromagnetic Wave Theory . . . . . . . . . . . . . . 15
2.2 Diffraction and Interference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2.3 Transmission Line Theory (TLT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
2.4 Plasmonic Nanograting Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
2.5 Numerical Methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3 Fabrication Techniques . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.1 Nanofabrication Using Photons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.1.1 Photolithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.1.2 Electron Beam Lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.1.3 Focused-Ion Beam Lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.1.4 Scanning Probe Lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
3.2 Emerging Techniques . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
3.2.1 Nanoimprint Lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
3.2.2 Soft Lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
3.2.3 Nanosphere Lithography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
3.2.4 Nanofabrication by Self-assembly . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
vii
viii Contents
Feature Size
Opto-Mechanical Tunability
Fig. 1.1 The framework of MEMS, Optical MEMS, Plasmonics, and Plasmonic MEMS. a Compar-
ison by the critical feature size and the optomechanical tunability. b Classified view of each field.
Plasmonic MEMS can be considered as a subset of optical MEMS with plasmonic materials and
components
circuits [6], radio frequency (RF) and Infrared (IR) devices [7, 8], wireless communica-
tions and nanosatellites [9], unmanned air vehicles (UAVs) [10], optical detectors [11],
biomedical devices and imaging [12–14], to name a few.
Integration of MEMS with biomedical devices has opened up a new world of possibil-
ities for medical applications. Healthcare industry such as pharmaceuticals, healthcare
equipment, biotechnology and related life sciences possess a significant demand for
biomedical MEMS (Bio-MEMS). Figure 1.2 shows a few representative BioMEMS
apparatuses.
Fig. 1.2 A few BioMEMS representative applications including MEMS pressure sensors, MEMS
cancer detection and imaging, MEMS microneedles drug delivery, and MEMS in surgery. Images
are taken from top-left [15, 16], top-right [12, 17], bottom left [18, 19], bottom right [20–22]
1.1 MEMS and Optical MEMS 3
One of the first MEMS devices to be utilized in the biomedical and bioengineering
community were pressure sensors in the late 1980s [23]. In one of the pioneering works,
Leonardi, et al. realized the first wireless contact lens for intraocular pressure (IOP) mon-
itoring using a miniaturized MEMS biosensor integrated with biocompatible materials to
detect deformations of the eyeball. The device can be used to treat very complex diseases
such as Glaucoma. The wireless sensor was built using a microprocessor and an antenna
integrated into the soft contact lens shown in Fig. 1.2. The MEMS pressure sensor consists
of passive strain gages to determine corneal curvature alterations in response to IOP.
Cancer is among the leading causes of death worldwide. Among different types of can-
cer, the death rate for oral and oropharyngeal cancer is significantly higher [16]. Wang
et al. realized a MEMS enabled handheld high resolution confocal imaging probe for
portable oral cancer detection [17]. Record high field of view was achieved using a
programmable MEMS micromirror as shown in Fig. 1.2. The MEMS device utilizes a
voltage-controlled biaxial gimbal structure to rotate along the two perpendicular axes.
The realized handheld scanner imaging device illustrates great promise as a prospective
clinical tool for cancer risk assessment, evaluation and treatment.
MEMS can enable microneedles (needles orders of magnitude smaller than the con-
ventional ones) for drug delivery, vaccine delivery and fluid sampling and analysis. These
microneedles can be manufactured using a variety of materials including glass, ceram-
ics, silicon, bio-compatible polymers and also water-soluble materials [19, 24]. Scanning
electron microscope (SEM) photographs of e few microneedles are presented in Fig. 1.2.
Authors in [25] carried out the first human study to show that microneedles are painless.
400 microneedles in an area of 3 × 3 mm used in this study. Each microneedle was approx-
imately 150 µm tall with a base diameter of 80 µm and the tip radius curvature of 1 µm.
Many commercialized microneedles have been developed for a variety of applications
such as monitoring and controlling blood glucose levels, transdermal micro-projection
delivery, and treating alopecia and skin restoration.
Minimally invasive surgery (MIS) is a type of procedure done to limit the size of inci-
sion (cut). Advantages of MIS are less scarring, less injury to tissue, shorter hospital stays
and less pain. MEMS based microsurgical tools such as microtweezers, microsensors, and
microgrippers have been ascertained as a central enabling technology for MIS. A pair of
microgrippers and a temperature sensor embedded in robotic microgripper for surgical
applications are shown in Fig. 1.2 [22]. One very important and revolutionary aspect of
MEMS as a pressure sensor in MIS is to distinguish between different types of tissue
during the surgery. This helps the surgeon to identify the proper tissue before making
any incision. Menciassi et al. [26] reported a pioneering and an inventive MEMS device
for the palpation of tissue using strain gauges. The realized microgripper apparatus was
fabricated using an electroplated nickel covered with a thin gold layer, with an overall
width of about 7.5 mm and a thickness of 0.4 mm. An overall displacement of 17 µm at
the fingertips was achieved using flexure joints.
4 1 Introduction
Photonics; the science of generating and harnessing light, are among the research fields
touched by the MEMS technology. The pioneering paper of Petersen’s on silicon scan-
ner [27] galvanized the extensive interest in optical MEMS. Since then, optical MEMS
have led to the development of MEMS tunable digital displays [28], deformable mirrors
[29], tunable photonic crystal [30], adjustable lenses and apertures [31], endoscopic imag-
ing devices [32], and optical telecommunication systems [33]. The application of optical
MEMS scanning has resulted in miniaturized devices for biomedical applications such
3D imaging devices for in vivo diagnostics [34], MEMS based optical biopsy [35], and
optical coherence tomography (OCT) systems [13, 32].
Figure 1.3 shows an optical MEMS enabled endoscopic OCT imaging system. Since
its first demonstration by Pan et al. [37], MEMS based endoscopic devices have made
significant progress and improvements and currently are being used a vast majority of
endoscopic OCT imaging devices. Shown in Fig. 1.3b, is the first 3D endoscopic optical
biopsy system. This device is capable of taking high-resolution, noninvasive in vivo clini-
cal images. The integrated optical MEMS scanning micromirror exploits a 2D gimbal-less
vertical comb and operates at resonant frequencies of 1.8 and 2.4 kHz in x and y directions
respectively. Interested readers can refer to more comprehensive and dedicated textbooks
and review papers for more in-depth discussion on fundamentals and recent advances in
optical MEMS [3, 33, 38].
Nanophotonics, the study of light at the nanoscale, has become a vibrant field of research,
as the flow of light can be manipulated at length scales far below the optical wavelength,
largely surpassing the classical limits imposed by diffraction. Driven by remarkable
advances in micro/nanofabrication, atomic-resolution imaging, and ultrafast laser tech-
nologies, the interface between nanophotonics and MEMS has attested a tremendous
progress in the past few years. Prime examples include compact systems for optical com-
munication and interconnects [11, 39, 40], high resolution display [41], ultrafast cameras
(a)
(b) (c)
Fig. 1.3 a Schematic of a MEMS-tunable endoscopic OCT probe. b realized MEMS-based OCT
probe. c Two-axis MEMS micromirror [36]
1.1 MEMS and Optical MEMS 5
Fig. 1.4 Diffraction pattern appears as the distance between two optical emitters reduces and the
radiation pattern of the two sources are indistinguishable
and photon detectors [42], and novel optical sensors for clinical and security concerns
[43].
Conventional photonic devices are limited by diffraction. The diffraction limit is
an optical effect which encumbers the progress toward the miniaturization of photonic
devices by preventing localization of electromagnetic waves into nanoscale regions; scales
much smaller than the wavelength. One important conclusion is that light will diffract
when it propagates through a hole or a slit which is smaller than approximately half of
its wavelength (Fig. 1.4).
The diffraction pattern follows a simple but intuitive formula. That is
λ λ
d= /\ (1.1)
2nsinθ 2N A
where n is the refractive index, θ is the angle of incidence, and NA is the numerical
aperture of the lens.
Plasmonics, the study of the interaction between electromagnetic field and free elec-
trons in a metal, provides a solution to this dilemma. In plasmonic devices, free electrons
in the metal can be excited by the electric component of light to have collective oscilla-
tions. Using metallic and dielectric nanostructures precisely sculpted into two-dimensional
(2D) and 3D nanoarchitectures, light can be scattered, refracted, confined, filtered, and
processed in fascinating new ways that are impossible to achieve with natural materi-
als and in conventional geometries. Strictly speaking, plasmonics; investigates plasmons;
quanta of collective oscillations of the conduction electrons in a plasma. Plasmonics can
squeeze light into dimensions far beyond the diffraction limit by coupling light with the
surface collective oscillation of free electrons at the interface of a metal and a dielectric
[44]. This control over light at the nanoscale has not only unveiled a plethora of new
phenomena but has also led to a variety of relevant applications, including new venues
for integrated circuitry, optical computing, solar, and medical technologies, setting high
expectations for many novel discoveries in the years to come.
Four classical types of plasmons include, surface plasmon polaritons (SPPs), surface
plasmon resonances (SPRs), localized surface plasmons (LSPs), and spoof plasmons.
SPPs result from the interaction of excited electrons with polarized light at the interface
between a negative and positive permittivity materials. SPPs are propagating modes with
well-defined frequency and wavevector and are evanescently confined in the direction
6 1 Introduction
perpendicular to the propagation. This interaction gives rise to a new type of quasi-
particle called polaritons. Polaritons originate from strong light-matter interaction (strong
confinement) [45].
SPRs refers to resonances instigating from the collective oscillations of electrons in
metals at the interface due to Coulombic interaction with positive background. To excite
SPPs, polarized incident photons (light must be polarized to excite the longitudinal mode)
and SPRs must have the same frequency and wave vector.
LSPs are generated when electromagnetic field interacts with conduction electrons
on the surface of a conductive nanoparticle of size comparable to or smaller than the
excitation wavelength. LSPs are non-propagating excitations.
Metals have negative permittivity in the Visible and Ultraviolet regimes of the elec-
tromagnetic spectrum, thus support surface plasmons. However, when the wavelength is
increased to the Infrared (IR) and Terahertz (THz) regions metals act as perfect elec-
tric conductors (PEC). Spoof plasmons are guided leaky waves in the IR and THz regions
which can be recognized in metal surfaces patterned with periodic subwavelength grooves,
holes and nanowires [46]. A wide selection of materials can support surface plasmons.
Please see [47–49] for comprehensive review on plasmonic materials.
Tunable functionality of plasmonic devices is of outmost importance for realizing
active and reconfigurable optoelectronic devices. Several modulation techniques can be
used to achieve tunable response from plasmonic devices including electrical, optical,
and mechanical modulation [50]. Active manipulation of surface plasmons provides a
course to tweak the optical functionalities of the plasmonic structure and could be used
in light modulators, plasmonic switches and spectrometers to name a few.
Plasmonic MEMS is a rising field, inspired by the concepts of optical metamaterials and
the peculiar features of plasmonic nanopatterns. Low-profile patterned plasmonic surfaces
are synergized with a broad class of silicon microstructures, to greatly enhance near-
field nanoscale imaging, sensing and energy harvesting coupled with far-field free-space
detection. The concept has demonstrated impact on several key areas from ultra-compact
Microsystems for sensitive detection of small number of target molecules, and “surface”
as devices for optical data storage to microimaging and displaying.
Plasmonic MEMS is evolving into a novel paradigm for the conception of optical
plasmonic surfaces. Depending on the intrinsic material properties, different materials
response distinctively to the applied voltage. This will allow a wide variety of plasmonic
structure to be placed on electromechanically modulated substrate to control their optical
spectrum. The idea is schematically shown in Fig. 1.5a. Another option, is to directly
pattern a plasmonic grating or structure on the surface of a MEMS device as shown in
Fig. 1.5b.
1.2 Plasmonic MEMS: A Frontier of Photonic Devices 7
Fig. 1.5 Plasmonic MEMS. a Mechanical modulation of a plasmonics grating via stretchable sub-
strate. b Integration of a plasmonic array with a MEMS device
The first thermomechanicaly tunable plasmonic MEMS device was reported in 2011
by the pioneering work of Ou et al. [52]. The device consists of gold plasmonic split-
ring resonators (SRRs) supported by interchanging thermally tunable silicon nitride/gold
bridges (silicon nitride and gold both have large thermal expansion coefficient). Their
realized photonic metamaterial device operates three orders of magnitude faster than for-
merly reached modulation rate for the NIR spectrum. Potential applications of the device
include tunable sensors, modulators, and spectral filters.
The first light-controlled plasmonic MEMS device was attained in the NIR regime
via patterning asymmetrically spaced gold elements on silicon nitride strips [53]. The
authors demonstrated that through pump-probe experiment with ultrafast laser diodes
operating at 1550 and 1310 nm, large modulation of transmission can be achieved with
milliwatt power levels. The photo-addressable capacitance can be cooled down in high-
speed timescales on the order of 20 µs. Light modulated plasmonic devices can be used
to realize reconfigurable nonlinear metadevices.
In summary, the paradigm of plasmonic MEMS enables low-profile conformal sur-
faces on microdevices, rather than a bulk material or coatings, which may provide clear
advantages for the physical, chemical and biological-related sensing, imaging, light har-
vesting applications in addition to significantly easier realization, enhanced flexibility and
tunability.
In last few years, Plasmonic MEMS has developed tremendously. A summary of some
landmark papers in the field are presented in Table 1.1. A more comprehensive table can
be found in Appendix 1.
Despite recent advances in the field and the growing number of published works,
many more ideas need to be explored. We believe that the tremendous obtainable oppor-
tunities in combining plasmonics with MEMS still remains largely underexploited and
underexplored. Almost all current plasmonic MEMS devices and architectures exploit
conventional metal plasmonics. We predict the field to branch out towards combining
highly doped semiconductors as a plasmonic material for the Infrared and THz region.
This indeed can instigate fields beyond plasmonics MEMS and give birth to fields such
as epsilon-near zero (ENZ) MEMS.
Beside using metallic or highly doped semiconductor resonator, dielectric Mie res-
onators can also be integrated with MEMS technology to realized highly localized fields
and tunable dielectric metamaterials and metasurfaces.
1.3
Status of the Field
Emerging concepts, designs and applications of plasmonic MEMS have been demon-
strated in the recent years, ranging from plasmonic gas and chemical sensors, microfilters
for circulating tumor cells (CTC) capturing, DNA biosensing among many others. Fasci-
nating new concepts explored in detail in the framework of this review, with the goal to
devise new geometries on MEMS surfaces that may for example require no moving struc-
tures to tilt the radiated beam in the desired direction. We expect that the combination
of design theory, modeling and experimental implementation may provide full degrees
of freedom and enhanced performance for future plasmonic MEMS designs for specific
applications.
Although many promising results have been reported, several challenges remain
untouched. These challenges can be considered in three aspects.
In this book, we discuss the theory, fabrication, and application of plasmonic MEMS and
the recent progresses in the field for biosensing applications. We believe that the optical
plasmonic surface on MEMS concept may constitute the much sought flexible and reliable
bridge between near-field sensing, imaging at the nanoscale and far-field detection. In our
References 11
References
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Engineering, vol. 84, pp. 1341–1344, 2007/05/01/ 2007.
2. S. Yang and Q. Xu, “A review on actuation and sensing techniques for MEMS-based microgrip-
pers,” Journal of Micro-Bio Robotics, vol. 13, pp. 1-14, October 01 2017.
3. O. Solgaard, Photonic microsystems: Micro and nanotechnology applied to optical devices and
systems: Springer Science & Business Media, 2009.
4. H. T. Chorsi, M. T. Chorsi, and S. D. Gedney, “A Conceptual Study of Microelectromechanical
Disk Resonators,” IEEE Journal on Multiscale and Multiphysics Computational Techniques,
vol. 2, pp. 29-37, 2017.
5. M. T. Chorsi and H. T. Chorsi, “Modeling and analysis of MEMS disk resonators,” Microsystem
Technologies, vol. 24, pp. 2517-2528, June 01 2018.
6. S. Tabatabaei and A. Partridge, “Silicon MEMS Oscillators for High-Speed Digital Systems,”
IEEE Micro, vol. 30, pp. 80-89, 2010.
7. C. A. Musca, J. Antoszewski, K. J. Winchester, A. J. Keating, T. Nguyen, K. K. M. B. D. Silva,
et al., “Monolithic integration of an infrared photon detector with a MEMS-based tunable filter,”
IEEE Electron Device Letters, vol. 26, pp. 888-890, 2005.
8. J. Sha, W. Chen, K. Yan, J. Luo, R. Xu, D. Yao, et al., “Tunable Metamaterial IR Emitter
by Using MEMS Microheater,” in 2018 International Conference on Optical MEMS and
Nanophotonics (OMN), 2018, pp. 1–2.
9. M. Mihailovic, T. V. Mathew, J. F. Creemer, B. T. C. Zandbergen, and P. M. Sarro, “MEMS
silicon-based resistojet micro-thruster for attitude control of nano-satellites,” in 2011 16th Inter-
national Solid-State Sensors, Actuators and Microsystems Conference, 2011, pp. 262–265.
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igation system for an autonomous helicopter,” Aerospace Science and Technology, vol. 10,
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sitive hyperspectral imaging of biological tissue,” Optics Express, vol. 18, pp. 24101–24108,
2010/11/08 2010.
13. K. Karthik, C. C. Jonathan, M. Austin, J. K. Nate, H. Kazunori, E. M. Thomas, et al., “Fast
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mologica, vol. 87, pp. 433-437, 2009.
12 1 Introduction
This chapter provides the fundamentals of electromagnetic theory for the book in relation
to plasmonic MEMS. First, a brief review of Maxwell’s equations is provided. This is
followed by a discussion of general surface waves, dielectric constant of metals, and
plasmon dispersion. The next sections of the chapter focus on the intersection of memes
and plasmonics and reviews the theories relevant to plasmonics MEMS in the literature.
Considering the classical and semi-classical wave nature of light, Maxwell’s equations in
a conventional macroscopic framework can be used to fully describe the electromagnetic
wave interaction with metals. In differential form, Maxwell’s equations can be written as
-
- t) = − ∂ B(r, t) ,
∇ × E(r, (2.1)
∂t
- t)
∂ D(r,
- t) =
∇ × H(r, + -J(r, t), (2.2)
∂t
- t) = ρ(r, t),
∇ · D(r, (2.3)
- t) = 0,
∇ · B(r, (2.4)
These equations couple the four macroscopic fields D (the electric flux density), E (the
electric field), H (the magnetic field), and B (the magnetic flux density) with the charge
density (ρ) and current densities (J = Jc (conduction current density) + Ji (induction cur-
rent density) + Jd (displacement current density)). In macroscopic frame, current density
is expressed as the product of charge density and velocity for any location in space
- t) = ε0 E(r,
D(r, - t) + P(r,
- t), (2.6)
- t) = μ−1 B(r,
H(r, - t) − M(r,
- t), (2.7)
0
where ε0 [Farads/meter] and μ0 [Henries/meter] are the permittivity and the permeability
of the vacuum, respectively. For an isotropic, linear, and nonmagnetic approximation, the
constitutive relations can be written as:
- t) = ε0 εr E(r,
D(r, - t), (2.8)
- t) = μ0 μr H(r,
B(r, - t), (2.9)
where εr and μr are the relative permittivity and relative permeability, respectively. the
electric polarization P and magnetization M consider the properties of the medium. The
conduction current density Jc is related to the electric field using
Jc = σ E (2.10)
- t) = E 0 e j (ωt−k.-r) ,
E(r, (2.13)
2.1 Maxwell’s Equations and Electromagnetic Wave Theory 17
n̂ × (E1 − E2 ) = 0 (2.15)
n̂ · (μ1 H1 − μ2 H2 ) = 0 (2.17)
n̂ · (μ1 E1 − μ2 E2 ) = ρs (2.18)
where Jim and ρs are the impressed electric current and surface charge density, respec-
tively. The first two of these state that the tangential electric fields are continuous across
the interface, though the tangential magnetic fields are discontinuous at the same location
by an amount equal to the impressed electric current. Zenneck [1], more than a century
ago, solved the Maxwell’s equations for the planar interface of two different materials and
initiated the concept of surface waves. A surface wave is an electromagnetic wave with
parallel Poynting vector that propagates along a surface or an interface of two dissimilar
media. The propagation of a surface wave is guided by the planar interface and decays
exponentially in both media. Surface waves play a key role in studying properties of con-
densed matter at the interface. A more inclusive and mathematically rigorous derivation
of surface waves was later done by Sommerfeld [2], and those surface waves have since
become known as the Zenneck waves.
18 2 Theoretical Foundations
Equations (2.15) through (2.18) can be used to compute the fraction of a light wave
reflected and transmitted by a flat interface between two media with different refractive
indices (Fig. 2.2).
Applying the boundary conditions to a simple plane wave incident on a single pla-
nar interface leads to the Fresnel reflection and transmission coefficients. For TE case,
tangential electric field is continuous at the boundary,
Ei (y = 0, t) + Er (y = 0, t) = Et (y = 0, t) (2.19)
Using the constitutive relations and considering only the amplitude of the waves (E 0 )
at the boundary, the following relations can be derived for the reflection and transmission
coefficient of TE and TM polarized waves
E0r n i cos θi − n t cos θt
r T E = r⊥ = = (2.21)
E0i n i cos θi + n t cos θt
E0t 2n i cos θi
t T E = t⊥ = = (2.22)
E0i n i cos θi + n t cos θt
E0r n t cos θi − n i cos θt
r T M = rII = = (2.23)
E0i n i cos θt + n t cos θi
E0t 2n i cos θi
tT M = tII = = (2.24)
E0i n i cos θt + n t cos θi
Fig. 2.2 Fresnel reflection and transmission coefficients. a TE, perpendicular, s-polarized. b TM,
parallel, p-polarized, (“s” polarization (aka TE or horizontal) has an E field that is perpendicular to
the plane of incidence, “p” polarization (aka TM or vertical) has an E field that is parallel to the plane
of incidence), s and p stand for the German words senkrecht (perpendicular) and parallel (parallel)
2.1 Maxwell’s Equations and Electromagnetic Wave Theory 19
where n i and n t are the refractive indices of the incident and reflected medium. A plot of
Fresnel reflection and transmission coefficients for n = 1.5 is shown in Fig. 2.3.
At some angle, known as the critical angle, light traveling from a higher refractive
index medium to a lower refractive index medium will be refracted at 90º. When the
angle of incidence exceeds the critical angle, there is no refracted light. All the incident
light is reflected back into the medium. The critical angle of incidence can be obtained
for two media
n2
sin θc = , n1 > n2 (2.25)
n1
Dielectric constant (relative permittivity) is a measure of the polarizability of a mate-
rial and can be derived using the Lorentz model and the Drude model for dielectric and
metallic materials, respectively. By solving the standard equation of motion for a harmon-
ically bound classical electron, in analogy to the motion of a mass on a spring, we obtain
the displacement r (t) = r0 e−iωt
∂ 2r ∂r
me + m e γd = eE 0 e−i ωt , (2.26)
∂t 2 ∂t
where e and me are the charge and effective mass of the free electrons, and E 0 and ω are
the amplitude and frequency of the applied electric field (actuation force). The damping
term γd is proportional to γd = v F /l, where v F is the Fermi velocity and l is the electron
mean free path between scattering events.
Applying Fourier transform, F(r (t)), we obtain r (ω). Using r (ω) and polarization
vector, Lorentz equation can be derived as
ω2p /
εm (ω) = ε∞ + , ωp = 4π n e e2 , (2.27)
ω02 − ω2 − j γd ω me
0.2
Fig. 2.3 Reflections of TE and
TM modes for n = 1.5. Brewster
0
Brewster’s angle (rTM = 0) is
also plotted
Amplitude coefficients
r
-0.2 TM
-0.4
r
-0.6 TE
-0.8
-1
0 20 40 60 80 100
Angle of incidence
20 2 Theoretical Foundations
here ω p is the plasma frequency, ω0 is the frequency of the restoring force, and ε∞
describes the ionic background. Assuming the free electron model for metal (ω0 = 0),
Drude model can be obtained using
ω2p
εm (ω) = ε∞ − , (2.28)
ω2 + j γd ω
If ω is larger than ω p , corresponding refractive index is a real quantity, on the other
hand if ω is smaller than ω p , refractive index is imaginary since εm is negative.
The real and imaginary parts of the susceptibility are connected by the Kramers-
Kroenig relations (KKR).
(∞
2 ω' εi (ω' )dω'
εr (ω) = 1 + ℘ , (2.29)
π ω'2 − ω2
0
(∞
2ω εr (ω' )dω'
εi (ω) = − ℘ , (2.30)
π ω'2 − ω2
0
Fig. 2.4 Real and imaginary parts of the dielectric constant for gold in visible range of the wave-
length according to the Drude model
2.1 Maxwell’s Equations and Electromagnetic Wave Theory 21
Considering TM excitation (Hz , Ex , and Ey ) and propagation along the x-direction, i.e.
∂/∂ x = i β,
1 ∂ Hz
Ex = i (2.31)
ωε0 ε ∂ y
β
Ey = Hz (2.32)
ωε0 ε
∂ 2 Hz
+ (k02 ε − β 2 )Hz = 0 (2.33)
∂ y2
Equation (2.31) through (2.33) can be expanded separately for each region in Fig. 2.5.
For the dielectric region, i.e. y > 0,
k2
Ex (y) = −iA2 eiβx e−k2 y (2.35)
ωε0 ε2
β
E y (y) = A2 eiβx e−k2 y (2.36)
ωε0 ε2
and for the metallic region, i.e. y > 0,
k1
Ex (y) = iA1 ei β x e k1 y (2.38)
ωε0 ε1
β
E y (y) = A1 ei β x e k1 y (2.39)
ωε0 ε1
22 2 Theoretical Foundations
0.7
Fig. 2.6 Dispersion relation of
SPPs 0.6
0.5
0.4
p
surface plasmon
/
0.3 light line
prism coupled
0.2
0.1
0
0 0.05 0.1 0.15
wavevector (1/m)
Applying the boundary condition equations from Eq. (2.15) to (2.18), we can obtain
the relations in Eq. (2.40).
k2 ε2 k12 = β 2 − k02 ε1
A1 = A2 , =− , (2.40)
k1 ε1 k22 = β 2 − k02 ε2
Finally, the dispersion relation of SPPs propagating at the interface between the two
half-spaces can be obtained as
/
ε1 ε2
β = k0 (2.41)
ε1 + ε2
Figure 2.6 shows plots of Eq. (2.41). As it can be seen from the figure, due to
momentum matching, only the light coupled with a prism can excite SPPs.
As mention above, diffraction and interference are at the heart of plasmonics. We shall not
discuss these effects at any length in this section, since they are included in all classical
electromagnetic textbooks, but merely mention a few central results.
Diffraction refers to reshaping of light when it encounters a slit or an obstacle. Con-
sidering a planewave with wavelength λ incident on an aperture of width d, two distinct
diffraction patterns can be attained depending on the slit width and the distance between
the screen and the slit. The diffraction is said to be in the Fresnel or near-field limit if
L ≤ d 2 /λ. On the other hand, when it is in the Fraunhofer region (Fig. 2.7).
The intensity of the diffraction pattern can be approximated using Eq. (2.42).
2.3 Transmission Line Theory (TLT) 23
( )2
sin(kd sin(θ ))
I (θ ) ∝ (2.42)
kd sin(θ )
with k = 2π/λ being the wave vector. Therefore, the maximum intensity (zero-order
mode) pattern occurs at θ = 0. Equation (2.42) can also be solved to calculate higher-
order diffraction maxima.
Transmission line theory (TLT) is a fully analytical, fast, and reliable methodology for
analyzing wave propagation in metallic and dielectric structures. TLT bridges the gap
between electromagnetics and basic circuit theory. The main concept is to use transmis-
sion line elements, i.e. a series resistance, a series inductance, a shunt capacitance, and
a shunt conductance, to model and analyze electromagnetic field (in analogy to voltage
(V) and current (I)) propagation in optical components such as waveguides, modulators,
and gratings. TLT has been extensively exploited to investigate the wave propagation in
plasmonic structures. In this section, we briefly review the literature on TLT concern-
ing plasmonic MEMS. Inexperienced readers are encouraged to refer to electromagnetic
textbooks for more elementary discussions (Fig. 2.8).
We start with a simple example, a metal-dielectric-metal (MDM) waveguide which
consists of a dielectric layer of thickness h surrounded by two metallic layers. For h
much smaller than the wavelength, only the fundamental TM waveguide mode can prop-
agate along the waveguide. The effective refractive index of an MDM waveguide can be
calculated using
β λ λ
ne f f = = +i (2.43)
k λM D M 4π L S P P
The real part of Eq. (2.44) describes the guided wavelength (λ M D M ) and the imagi-
nary part determines the propagation length (L S P P ). The characteristic impedance of the
plasmonic waveguide can be calculated using Z = V (x)/I (x) = V0 /I0 .
( )
β 1 1
V0 = + (2.44)
ω εd kd εm km
( )
εm − εd
I0 = hε0 (2.45)
εm εd
Our first example considers a recent work by Li et al. [3] in which they have proposed
a THz MDM waveguide sensor with an embedded microfluidic channel. The proposed
structure is suitable for sensing the refractive index variations in liquid. The proposed
THz waveguide with a two layer-stub structure is conceptually outlined in Fig. 2.9.
The transmission spectrum was analytically calculated using the TLT method. Obtained
results was compared with the numerical results achieved using the finite-difference
time domain (FDTD) method. Initially, the waveguide of width d is substituted by a
Fig. 2.9 a The proposed plasmonic piezoelectric MEMS device. b SEM images of the fabricated
device. c Corresponding TLT circuit model. ZMTS , is the surface impedance of the plasmonic
metasurface
here εd and η are the relative permittivity of dielectric and wave impedance in the dielec-
tric, respectively. The impedance of medium can be related to the impedance of free
space η0 using η = η0 /n (inversely proportional to refractive index). The TLT equivalent
network of the biosensor presentation is presented in Fig. 2.8c. The effective impedance
corresponding to the dielectric and liquid sample of transmission can be derived by
Z 'L + j Z d tan(βd h1 )
Z stub = Z d (2.48)
Z d + j Z 'L tan(βd h1 )
in which βd is the propagation constant of surface plasmons in the spacing dielectric, and
'
Z L is the effective impedance of the liquid microfluidic sample which can be calculated
via
26 2 Theoretical Foundations
Z L + j Z s tan(βs h2 )
Z 'L = Z s (2.49)
Z s + j Z L tan(βs h2 )
here Z d and Z s are the characteristic impedances corresponding to dielectric εd and
sample εs permittivity, respectively. βs is the surface plasmon propagation constant in
the microfluidic sample. Finally, the transmission properties of the MDM waveguide
calculated using the following formula
I I ( )
I Z stub II−2 L
T = II1 + exp − (2.50)
2Z air I LSPP
where σ Au is the gold conductivity, and a and b are the dimensions and the periodicity of
the grating, respectively as shown in Fig. 2.9b.
Since the original report of diffraction grating by Hopkinson and Rittenhouse in 1786
[5], the interaction of light with periodic and grating structures have become a fascinating
subject for understanding the nature of light-matter interaction.
2.4 Plasmonic Nanograting Theory 27
Fig. 2.10 Diagram presenting path difference between two incident rays A and B scattered from a
grating’s grooved surface
The grating equation can be used to calculate the diffraction angle of an array of
incident beams. It can be obtained by calculating the path difference between two light
rays as presented in Fig. 2.10.
When this path length difference is an integer (m) multiple of the wavelength, rays
interfere constructively.
Ω = mλ, (2.55)
Which is the grating equation. here m is the order of diffraction, λ is the diffracted
wavelength, and d is called the grating constant.
In one of the most recent works, diffracted beams from an array of sub-wavelength
plasmonic nanogratings was exploited to design a metalens, which can focus the diffracted
light beam. The proposed geometry contains arrays of subwavelength size gold cylin-
ders with different radius and periodicity as shown in Fig. 2.11. When electrostatically
actuated, the MEMS platform manipulates the angle of the metalens.
28 2 Theoretical Foundations
Fig. 2.11 a Optical microscope image of the proposed plasmonic MEMS flat lens. b SEM images of
the fabricated nanograting. c Schematic representation of focusing characteristics using diffraction
grating. d–f Schematic of the mechanical rotation of the MEMS device along with the optical profile
at the focal line
The optical focusing performance of the realized plasmonic MEMS metalens is show
in Fig. 2.11. The phase profile of the lens was obtained using the diffraction equation [6].
That is
( / )
2π
ϕ(x) = f − x 2 + f 2 − x · sin(θ ) , (2.57)
λ
in which f is the focal length, x is the location of the element, and θ is incident angle.
References 29
References
1. J. Zenneck, “Über die Fortpflanzung ebener elektromagnetischer Wellen längs einer ebenen
Leiterfläche und ihre Beziehung zur drahtlosen Telegraphie,” Annalen der Physik, vol. 328,
pp. 846-866, 1907.
2. A. Sommerfeld, “Über die Ausbreitung der Wellen in der drahtlosen Telegraphie,” Annalen der
Physik, vol. 333, pp. 665-736, 1909.
3. X. Li, J. Song, and X. J. Zhang, “Design of terahertz metal-dielectric-metal waveguide with
microfluidic sensing stub,” Optics Communications, vol. 361, pp. 130–137, 2016/02/15/ 2016.
4. Y. Hui, J. S. Gomez-Diaz, Z. Qian, A. Alù, and M. Rinaldi, “Plasmonic piezoelectric nanome-
chanical resonator for spectrally selective infrared sensing,” Nature Communications, vol. 7,
p. 11249, 04/15/online 2016.
5. F. Hopkinson and D. Rittenhouse, “An Optical Problem, Proposed by Mr. Hopkinson, and
Solved by Mr. Rittenhouse,” Transactions of the American Philosophical Society, vol. 2,
pp. 201–206, 1786.
6. "Wideband plasmonic focusing metasurfaces,” Applied Physics Letters, vol. 105, p. 053107,
2014.
7. S. D. Gedney, “Introduction to the finite-difference time-domain (FDTD) method for electro-
magnetics,” Synthesis Lectures on Computational Electromagnetics, vol. 6, pp. 1-250, 2011.
8. Y. Yao, M. A. Kats, R. Shankar, Y. Song, J. Kong, M. Loncar, et al., “Wide Wavelength Tun-
ing of Optical Antennas on Graphene with Nanosecond Response Time,” Nano Letters, vol. 14,
pp. 214–219, 2014/01/08 2014.
9. Y. Gao, G. Ren, B. Zhu, H. Liu, and S. Jian, “Nanomechanical Plasmonic Switch Based on
Multimode Interference,” IEEE Photonics Technology Letters, vol. 28, pp. 2661-2664, 2016.
10. T. Stark, M. Imboden, S. Kaya, A. Mertiri, J. Chang, S. Erramilli, et al., “MEMS Tunable Mid-
Infrared Plasmonic Spectrometer,” ACS Photonics, vol. 3, pp. 14–19, 2016/01/20 2016.
Fabrication Techniques
3
Nanotechnology deals with materials and structures at or around nanometer scale, with
minimum dimensions currently defined (more-or-less arbitrarily) to be 100-nm. All the
grand ambitions of nanotechnology are necessarily dependent upon practical and feasible
fabrication methods. There are various nanofabrication techniques with different perfor-
mances, choice of which depends upon the materials, applications, and geometries of the
desired structure. These techniques can be roughly classified into either a “top-down” or
“bottom-up” approach. Top-down fabrication refers to methods where one commences
with macroscopically dimensioned material and carves the nanostructure out of the larger
structure. On the other hand, in the bottom-up approach, assembly begins with smaller
units: positions of atoms or molecules are manipulated to piece together the nanostructure.
The top-down and bottom-up approaches are schematically shown in Fig. 3.1.
Because many materials below 100-nm can have properties and features considerably
different from their bulk forms, the 100-nm dimensional scale has set the border between
nanotechnology and conventional microscale technologies.
The topic of nanofabrication is far too vast to be covered in one review. The goal of
this section of the paper is simply to introduce the method, review the substantial body
of literature concerning sub-100-nm resolution fabrication, and mention recent advances
in plasmonic, plasmonic MEMS, and plasmonic micromachining fabrication. For a more
detailed discussion, we refer the readers to nanofabrication books [1–4].
Figure 3.2 classifies the fabrication techniques that are discussed in this paper under
the conventional top-down and bottom-up approaches.
Here, however, a different perspective has been taken, and nanofabrication techniques
are classified based on the fabrication tools (photons, charged particles, etc.). Various
techniques of Nanofabrication that are currently under development in the laboratory and
that require further improvements will be presented in the “Emerging Techniques” section.
Fig. 3.2 Classification of the fabrication techniques that are discussed in this paper
3.1.1 Photolithography
In contact lithography, the photomask is brought into physical contact with the wafer
and then exposed to light. Contact lithography offers high resolution, but mask damage
and a resultant low yield make this process impractical in most production environments.
In proximity lithography, a gap is placed between mask and wafer in the range of 10–
30 micro meters. Although proximity lithography does not suffer from mask damage as
in contact printing, its low resolution makes it unsuitable for sub-100-nm fabrication. In
projection lithography on the other hand, the image is projected onto the wafer with the
help of a system of lenses. In this case, the mask can be used several times, substantially
reducing the mask per wafer cost.
The early days of projection photolithography in the mid-1970’s used visible light to
fabricate structures at the micrometer scale. Unfortunately, conventional projection pho-
tolithography is incompetent for fabricating nanoscale structures. The resolution limit
(minimum feature that can be printed, R) of a conventional projection photolithography
system can be defined by the Rayleigh criterion [5], that is
λ λ
R = k1 = , (3.1)
NA n sin θ
where λ is the exposure wavelength, NA is the numerical aperture of the imaging optical
system, k1 is a factor related to the imaging process (not to be confused with the wavevec-
tor), n is the refractive index of the medium between the lens and the imaging plane, and
θ is the half-angle of the maximum cone of light that can enter or exit the lens.
34 3 Fabrication Techniques
From Eq. 3.1, efforts to improve the resolution of conventional projection optical
lithography for sub-100 nm lithography can be classified into three areas: photolithog-
raphy at shorter wavelengths (λ), photolithography at high NA, and photolithography at
reduced k1 .
Fig. 3.4 Schematic of EUV system for 13 nm radiation. Four major components of EUV can be
observed
3.1 Nanofabrication Using Photons 35
The four main components of EUV lithography can be seen in Fig. 3.4. In order to
generate the EUV source, laser-produced plasma (LPP) and discharge-produced plasma
(DPP) are two frequent approaches. From a number of LPP-generating sources that can
emit at 13.5 nm, three materials have garnered attention, namely, Sn [7], Xe [8], and Li
[9]. Of these three, Sn has proven to be the most likely candidate, as it has the highest con-
version efficiency [10, 11]. Another important component of EUV lithography is “EUV
optics”. The main components for EUV optics are mirrors coated with distributed Bragg
reflectors (DBRs) in order to reach a high reflectivity. Typical DBRs consist of quar-
ter wavelength-thick multiple layers of alternating materials that have different refractive
indices [12]. New types of DBRs with different materials and geometries have been devel-
oped at different frequencies [13, 14]. EUV mask technology is considered to be one of
the most critical issues for the successful implementation of nanofabrication processes.
First a blank mask is designed, then, since EUV light is extremely absorptive by most
materials at this frequency, the patterning of the refractive material is applied. The EUV
mask should be free of defects in both substrate and refractive material. Recently several
defect removal techniques have been devised for EUV masks; for an in-depth discussion,
the reader can refer to the following papers [15–21]. Developing photoresists for EUV is
one of the main challenges for the cost-effectiveness and the introduction of EUV lithog-
raphy into high-volume manufacturing. In order for EUV lithography to be a competent
technique for the next generation lithography (i.e., 100 wafers per hour), high-sensitivity
resist (greater than 20 mJ cm–2 ) is needed to compensate for the low power level of the
EUV source. Higher sensitivity means lower line edge roughness (LER), which is not
appropriate for EUV resists. LER has been a decisive issue for sub-100 nm lithography.
Critical challenges for EUV resist materials are discussed in [22].
Recent innovations have addressed the challenges associated with the resist perfor-
mance of EUV. For example, by introducing metals to the resists, Inpria© has shown
excellent resolution with their hafnium oxide based resist [23]. More work on this has
been mostly done by Cornell university in which they have achieved higher sensitivity
[24, 25]. Molecular organometallic resists have been also exploited [26, 27]. A sensitivity
of 50 mJ cm−2 has been obtained using platinum and palladium mononuclear complexes
in [28].
Photolithography at high NA
The second parameter which affects the resolution of optical lithography, in addition to
the wavelength as seen in Eq. 3.1, is the numerical aperture (NA). When light passes
through a slit (mask), it diffracts, so a lens is needed to gather the diffracted rays. Lenses
with larger diameters (higher NA) are more suitable for optical lithography since they can
accumulate more diffracted light rays to focus onto the image plane, as can be seen from
Fig. 3.5.
The higher the NA, the more complex, big, heavy, and expensive the lens has become.
In the 1980s, a G-line stepper lens at 0.35 NA weighed only 14 kg. By the mid-1990s, an
36 3 Fabrication Techniques
I-line stepper lens at 0.63 NA weighed over 500 kg [29]. Resolution has been improved
by creating exposure tools with greater NAs for each wavelength. For 193 nm dry imag-
ing, the lenses have progressively increased from 0.6 to 0.75 NA, 0.85 NA, and 0.93 NA.
Typically, the projection optics and the wafer stage occur in air or in a vacuum, dictat-
ing that the numerical aperture, therefore, cannot be bigger than 1. Recently, immersion
lithography has provided an alternative method of increasing the NA: by increasing n. In
this case, the NA can be greater than 1. The gap between the last lens element and the
resist can be filled with a liquid, as shown in Fig. 3.6, which will have a much higher
refractive index n than air.
Photolithography at reduced k1
In addition to the wavelength reduction and the increase of NA, the resolution of optical
projection lithography can also be improved by the optimization of the process parameters,
including illumination settings, mask, and photoresist process. These contributions can be
included in the k 1 factor in Eq. 3.1, called the process factor. Improvements in imaging
optics and photoresist processes have continuously driven down the k 1 factor. Figure 3.7
shows this reduction of k 1 from 1982 through 2000 [1]. Usually, a k 1 factor above 0.30 is
needed for production, and k 1 cannot typically go below 0.25. A lithographic process in
which 0.25 < k 1 < 0.30 is difficult and requires very aggressive resolution enhancement
techniques. This kind of low-k 1 process is useful during early technique development.
For example, a 193 nm exposure tool with 0.85 NA used for production at the 90 nm
half-pitch node (k 1 = 0.396) could also be used for advanced development of 65 nm
3.1 Nanofabrication Using Photons 37
half-pitch processes (k 1 = 0.286). Once the 0.93 NA tool became available, the 65 nm
process could be transferred to this new tool.
Table 3.1 summarizes the recent advances towards reduction of the process factor. A
brief review of the advancement of photolithography from its earliest days until 2002 can
be found in [30]. More details about EUV lithography can also be found in [31, 32].
Photolithography is a robust approach for the fabrication of sub-100 nm structures.
Fabrication of 100 nm line and space patterns and 70 nm isolated lines has been demon-
strated by using an intermediate hard mask material such as silicon oxide or silicon
oxynitride [34]. Sub-100-nm patterning using a single layer of deep-UV photoresist,
56. Q. What may we learn from the last part of this verse?
A. That even the most civil offices due to our nearest friends,
ought not to hinder us, if possible, from keeping the sabbath-day
holy.
CHAPTER XXIV.
11. Q. What may we learn from the disciples not believing the
women’s report?
26. Q. Why must Christ rise again and enter into glory?
A. That the spiritual visits of Jesus Christ in this life, are but
of a short continuance; which should set us upon preparing for
that place, where we shall see and be with Him to all eternity,
without interruption.
A. Jesus Christ.
CHAPTER II.
A. Mine hour for working this miracle is not yet come; the
wine being not quite, though very near out, as the original word
signifies: our extremity is Christ’s opportunity.
7. Q. Who were they that Jesus bid to fill the water pots?
CHAPTER III.
A. Yes, where it may be had; but how God will deal with
persons unbaptized we cannot tell. What have we to do to judge
those that are without?
13. Q. What learn you from these words, “The Son of man which
is in heaven?”
CHAPTER IV.
9. Q. How can it be said that the Jews had no dealing with the
Samaritans, when in the foregoing verse we are told, the
disciples were gone to buy food?
A. When we are inward with him in our worship, and not only
honour him with our lips, but with our affections and lives.
28. Q. What learn you from the woman leaving her water-pot to
go into the city?
A. That we should leave our worldly business, rather than
neglect at proper times to attend on the means of grace.
35. Q. What does Christ mean when he bids his disciples “to lift
up their eyes?”
A. That the prophets had prepared the way for his coming,
by their prophecies, which made the disciples work far more
easy.
CHAPTER V.
14. Q. What learn you from Christ’s finding the man that was
healed, in the temple?
18. Q. What learn you from the latter part of this verse?
A. That the Jews thought, though the Arians deny it, that
Jesus Christ believed and made himself to be very God.
CHAPTER VI.
12. Q. What learn you from Christ bidding them “Gather up the
fragments that remained?”
26. Q. What learn you from what Christ here said to the
people?
53. Q. Have the papists any grounds from hence for their
doctrine of transubstantiation?
A. No; for Christ tells us in the 63d verse, that the flesh
profiteth nothing, and that his words are spirit and life; i. e. they
are not to be understood in a carnal but spiritual sense; and
frequently by interpreting them literally, men do greatly err.
CHAPTER VII.
12. Q. What learn you from the different opinions men had of
Christ?
37. Q. Why did Christ cry out thus on the last day of the feast?
39. Q. Why was not the Holy Ghost given, till Jesus Christ was
glorified?
A. That where there is true grace, the fear of man will wear
off daily.
CHAPTER VIII.