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 Contents vii

4.4.4 Steady State Carrier Injection; Diffusion Length 145

4.4.5 The Haynes–Shockley Experiment 147
4.4.6 Gradients in the Quasi-Fermi Levels 150

5 Junctions 159
5.1 Fabrication of p-n Junctions 159
5.1.1 Thermal Oxidation 160
5.1.2 Diffusion 161
5.1.3 Rapid Thermal Processing 163
5.1.4 Ion Implantation 164
5.1.5 Chemical Vapor Deposition (CVD) 167
5.1.6 Photolithography 168
5.1.7 Etching 171
5.1.8 Metallization 173
5.2 Equilibrium Conditions 174
5.2.1 The Contact Potential 175
5.2.2 Equilibrium Fermi Levels 180
5.2.3 Space Charge at a Junction 180
5.3 Forward- and Reverse-Biased
Junctions; Steady State Conditions 185
5.3.1 Qualitative Description of Current Flow at a Junction 185
5.3.2 Carrier Injection 189
5.3.3 Reverse Bias 198
5.4 Reverse-Bias Breakdown 200
5.4.1 Zener Breakdown 201
5.4.2 Avalanche Breakdown 202
5.4.3 Rectifiers 205
5.4.4 The Breakdown Diode 208
5.5 Transient and A-C Conditions 209
5.5.1 Time Variation of Stored Charge 209
5.5.2 Reverse Recovery Transient 212
5.5.3 Switching Diodes 216
5.5.4 Capacitance of p-n Junctions 216
5.5.5 The Varactor Diode 221
5.6 Deviations from the Simple Theory 222
5.6.1 Effects of Contact Potential on Carrier Injection 223
5.6.2 Recombination and Generation in the Transition Region 225
5.6.3 Ohmic Losses 227
5.6.4 Graded Junctions 228
5.7 Metal–Semiconductor Junctions 231
5.7.1 Schottky Barriers 231
5.7.2 Rectifying Contacts 233
viii Contents

5.7.3 Ohmic Contacts 235

5.7.4 Typical Schottky Barriers 237
5.8 Heterojunctions 238

6 Field-Effect Transistors 257

6.1 Transistor Operation 258
6.1.1 The Load Line 258
6.1.2 Amplification and Switching 259
6.2 The Junction FET 260
6.2.1 Pinch-off and Saturation 261
6.2.2 Gate Control 263
6.2.3 Current–Voltage Characteristics 265
6.3 The Metal–Semiconductor FET 267
6.3.1 The GaAs MESFET 267
6.3.2 The High Electron Mobility Transistor (HEMT) 268
6.3.3 Short Channel Effects 270
6.4 The Metal–Insulator–Semiconductor FET 271
6.4.1 Basic Operation and Fabrication 271
6.4.2 The Ideal MOS Capacitor 275
6.4.3 Effects of Real Surfaces 286
6.4.4 Threshold Voltage 289
6.4.5 MOS Capacitance–Voltage Analysis 291
6.4.6 Time-Dependent Capacitance Measurements 295
6.4.7 Current–Voltage Characteristics of MOS Gate Oxides 296
6.5 The MOS Field-Effect Transistor 299
6.5.1 Output Characteristics 299
6.5.2 Transfer Characteristics 302
6.5.3 Mobility Models 305
6.5.4 Short Channel MOSFET I–V Characteristics 307
6.5.5 Control of Threshold Voltage 309
6.5.6 Substrate Bias Effects—the “body” effect 312
6.5.7 Subthreshold Characteristics 316
6.5.8 Equivalent Circuit for the MOSFET 318
6.5.9 MOSFET Scaling and Hot Electron Effects 321
6.5.10 Drain-Induced Barrier Lowering 325
6.5.11 Short Channel Effect and Narrow Width Effect 327
6.5.12 Gate-Induced Drain Leakage 329
6.6 Advanced MOSFET Structures 330
6.6.1 Metal Gate-High-k 330
6.6.2 Enhanced Channel Mobility Materials and Strained Si FETs 331
6.6.3 SOI MOSFETs and FinFETs 333
 Contents ix

7 Bipolar Junction Transistors 348

7.1 Fundamentals of BJT Operation 348
7.2 Amplification with BJTs 352
7.3 BJT Fabrication 355
7.4 Minority Carrier Distributions and Terminal Currents 358
7.4.1 Solution of the Diffusion Equation in the Base Region 359
7.4.2 Evaluation of the Terminal Currents 361
7.4.3 Approximations of the Terminal Currents 364
7.4.4 Current Transfer Ratio 366
7.5 Generalized Biasing 367
7.5.1 The Coupled-Diode Model 368
7.5.2 Charge Control Analysis 373
7.6 Switching 375
7.6.1 Cutoff 376
7.6.2 Saturation 377
7.6.3 The Switching Cycle 378
7.6.4 Specifications for Switching Transistors 379
7.7 Other Important Effects 380
7.7.1 Drift in the Base Region 381
7.7.2 Base Narrowing 382
7.7.3 Avalanche Breakdown 383
7.7.4 Injection Level; Thermal Effects 385
7.7.5 Base Resistance and Emitter Crowding 386
7.7.6 Gummel–Poon Model 388
7.7.7 Kirk Effect 391
7.8 Frequency Limitations of Transistors 394
7.8.1 Capacitance and Charging Times 394
7.8.2 Transit Time Effects 397
7.8.3 Webster Effect 398
7.8.4 High-Frequency Transistors 398
7.9 Heterojunction Bipolar Transistors 400

8 Optoelectronic Devices 410

8.1 Photodiodes 410
8.1.1 Current and Voltage in an Illuminated Junction 411
8.1.2 Solar Cells 414
8.1.3 Photodetectors 417
8.1.4 Gain, Bandwidth, and Signal-to-Noise Ratio
of Photodetectors 419
x Contents

8.2 Light-Emitting Diodes 422

8.2.1 Light-Emitting Materials 423
8.2.2 Fiber-Optic Communications 427
8.3 Lasers 430
8.4 Semiconductor Lasers 434
8.4.1 Population Inversion at a Junction 435
8.4.2 Emission Spectra for p-n Junction Lasers 437
8.4.3 The Basic Semiconductor Laser 438
8.4.4 Heterojunction Lasers 439
8.4.5 Materials for Semiconductor Lasers 442
8.4.6 Quantum Cascade Lasers 444

9 Integrated Circuits 452

9.1 Background 453
9.1.1 Advantages of Integration 453
9.1.2 Types of Integrated Circuits 455
9.2 Evolution of Integrated Circuits 456
9.3 Monolithic Device Elements 459
9.3.1 CMOS Process Integration 459
9.3.2 Integration of Other Circuit Elements 474
9.4 Charge Transfer Devices 480
9.4.1 Dynamic Effects in MOS Capacitors 481
9.4.2 The Basic CCD 482
9.4.3 Improvements on the Basic Structure 483
9.4.4 Applications of CCDs 484
9.5 Ultra Large-Scale Integration (ULSI) 485
9.5.1 Logic Devices 487
9.5.2 Semiconductor Memories 497
9.6 Testing, Bonding, and Packaging 510
9.6.1 Testing 511
9.6.2 Wire Bonding 511
9.6.3 Flip-Chip Techniques 515
9.6.4 Packaging 515

10 hIGh-Frequency, High-Power and

Nanoelectronic Devices 521
10.1 Tunnel Diodes 521
10.1.1 Degenerate Semiconductors 521
10.2 The IMPATT Diode 525
10.3 The Gunn Diode 528
10.3.1 The Transferred-Electron Mechanism 528
10.3.2 Formation and Drift of Space Charge Domains 531
 Contents xi

10.4 The p-n-p-n Diode 533

10.4.1 Basic Structure 533
10.4.2 The Two-Transistor Analogy 534
10.4.3 Variation of a with Injection 535
10.4.4 Forward-Blocking State 536
10.4.5 Conducting State 537
10.4.6 Triggering Mechanisms 538
10.5 The Semiconductor-Controlled Rectifier 539
10.5.1 Turning off the SCR 540
10.6 Insulated-Gate Bipolar Transistor 541
10.7 Nanoelectronic Devices 544
10.7.1 Zero-Dimensional Quantum Dots 544
10.7.2 One-Dimensional Quantum Wires 546
10.7.3 Two-Dimensional Layered Crystals 547
10.7.4 Spintronic Memory 548
10.7.5 Nanoelectronic Resistive Memory 550

Appendices
I. Definitions of Commonly Used Symbols 555
II. Physical Constants and Conversion Factors 559
III. Properties of Semiconductor Materials 560
IV. Derivation of the Density of States in the Conduction
Band 561
V. Derivation of Fermi–Dirac Statistics 566
VI. Dry and Wet Thermal Oxide Thickness Grown on
Si (100) as a Function of Time and Temperature 569
VII. Solid Solubilities of Impurities in Si 571
VIII. Diffusivities of Dopants in Si and SiO2 572
IX. Projected Range and Straggle as Function of Implant
Energy in Si 574

Answers to Selected Self Quiz Questions 576

Index 580
This page intentionally left blank
 Preface

This book is an introduction to semiconductor devices for undergraduate

electrical engineers, other interested students, and practicing engineers and
scientists whose understanding of modern electronics needs updating. The
book is organized to bring students with a background in sophomore physics
to a level of understanding that will allow them to read much of the current
literature on new devices and applications.

An undergraduate course in electronic devices has two basic purposes: Goals

(1) to provide students with a sound understanding of existing devices, so
that their studies of electronic circuits and systems will be meaningful and
(2) to develop the basic tools with which they can later learn about newly
developed devices and applications. Perhaps the second of these objectives
is the more important in the long run; it is clear that engineers and scientists
who deal with electronics will continually be called upon to learn about
new devices and processes in the future. For this reason, we have tried to
incorporate the basics of semiconductor materials and conduction processes
in s­ olids, which arise repeatedly in the literature when new devices are
explained. Some of these concepts are often omitted in introductory courses,
with the view that they are unnecessary for understanding the fundamentals
of junctions and transistors. We believe this view neglects the important goal
of equipping students for the task of understanding a new device by ­reading
the current literature. Therefore, in this text most of the commonly used
semiconductor terms and concepts are introduced and related to a broad
range of devices.

• updated discussion of MOS devices, both in the underlying theory of what is New in
ballistic FETs as well as discussion of advanced MOSFETs such as this Edition
FinFETs, strained Si devices, metal gate/ high-k devices, III-V high
channel mobility devices
• updated treatment of optoelectronic devices, including high bandgap
nitride semiconductors and quantum cascade lasers
• brand new section on nanoelectronics to introduce students to excit-
ing concepts such as 2D materials including graphene and topologi-
cal insulators, 1D nanowires and nanotubes, and 0D quantum dots;
• discussion of spintronics, and novel resistive and phase change
memories
• about 100 new problems, and current references which extend con-
cepts in the text.
xiii
xiv Preface

Reading Lists As a further aid in developing techniques for independent study, the reading
list at the end of each chapter includes a few articles which students can read
comfortably as they study this book. We do not expect that students will read
all articles recommended in the reading lists; nevertheless, some exposure to
periodicals is useful in laying the foundation for a career of constant updat-
ing and self-education. We have also added a summary of the key concepts
at the end of each chapter.

Problems One of the keys to success in understanding this material is to work prob-
lems that exercise the concepts. The problems at the end of each chapter are
designed to facilitate learning the material. Very few are simple “plug-in”
problems. Instead, they are chosen to reinforce or extend the material pre-
sented in the chapter. In addition, we have added “self quiz” problems that
test the conceptual understanding on the part of the students.

Units In keeping with the goals described above, examples and problems are stated
in terms of units commonly used in the semiconductor literature. The basic
system of units is rationalized MKS, although cm is often used as a conve-
nient unit of length. Similarly, electron volts (eV) are often used rather than
joules (J) to measure the energy of electrons. Units for various quantities are
given in Appendices I and II.

Presentation In presenting this material at the undergraduate level, one must anticipate
a few instances which call for a phrase such as “It can be shown . . .” This
is always disappointing; on the other hand, the alternative is to delay study
of solid state devices until the graduate level, where statistical mechanics,
quantum theory, and other advanced background can be freely invoked. Such
a delay would result in a more elegant treatment of certain subjects, but it
would prevent undergraduate students from enjoying the study of some very
exciting devices.
The discussion includes both silicon and compound semiconductors, to
reflect the continuing growth in importance for compounds in optoelectronic
and high-speed device applications. Topics such as heterojunctions, lattice-
matching using ternary and quaternary alloys, variation of band gap with
alloy composition, and properties of quantum wells add to the breadth of
the discussion. Not to be outdone by the compounds, silicon-based devices
have continued their dramatic record of advancement. The discussion of FET
structures and Si integrated circuits reflects these advancements. Our objec-
tive is not to cover all the latest devices, which can only be done in the journal
and conference literature. Instead, we have chosen devices to discuss which
are broadly illustrative of important principles.
 Preface xv

The first four chapters of the book provide background on the nature of
semiconductors and conduction processes in solids (Chapters 3, 4). Included
is a brief introduction to quantum concepts (Chapter 2) for those students
who do not already have this background from other courses. Chapter 5
describes the p-n junction and some of its applications. Chapters 6 and 7 deal
with the principles of transistor operation. Chapter 8 covers optoelectronics,
and Chapter 9 discusses integrated circuits. Chapter 10 applies the theory of
junctions and conduction processes to microwave and power devices. A com-
pletely new section on nanoelectronics has been added. All of the devices
covered are important in today’s electronics; furthermore, learning about
these devices should be an enjoyable and rewarding experience. We hope
this book provides that kind of experience for its readers.

The seventh edition benefits greatly from comments and suggestions pro- Acknow­
vided by students and teachers of the first six editions. The book’s readers ledgments
have generously provided comments which have been invaluable in devel-
oping the present version. We remain indebted to those persons mentioned
in the Preface of the first six editions, who contributed so much to the
development of the book. In particular, Nick Holonyak has been a source
of continuing information and inspiration for all seven editions. Additional
thanks go to our colleagues at UT–Austin who have provided special assis-
tance, particularly Leonard Frank Register, Emanuel Tutuc, Ray Chen,
Ananth Dodabalapur, Seth Bank, Misha Belkin, Zheng Wang, Neal Hall,
Deji Akinwande, Jack Lee, and Dean Neikirk. Hema Movva provided useful
assistance with the typing of the homework solutions. We thank the many
companies and organizations cited in the figure captions for generously pro-
viding photographs and illustrations of devices and fabrication processes.
Bob Doering at TI, Mark Bohr at Intel, Chandra Mouli at Micron, Babu
Chalamala at MEMC and Kevin Lally at TEL deserve special mention for
the new pictures in this edition. Finally, we recall with gratitude many years
of association with Joe Campbell, Karl Hess, and the late Al Tasch, valued
colleagues and friends.
Ben G. Streetman
Sanjay Kumar Banerjee
Prentice Hall Series
In Solid State Physical Electronics
nick Holonyak Jr., Editor

Cheo FIBER OPTICS: DEVICES AND SYSTEMS SECOND EDITION

Haus WAVES AND FIELDS IN OPTOELECTRONICS
Kroemer QUANTUM MECHANICS FOR ENGINEERING, MATERIALS SCIENCE,
AND APPLIED PHYSICS
Nussbaum CONTEMPORARY OPTICS FOR SCIENTISTS AND ENGINEERS
Peyghambarian/Koch/Mysyrowicz INTRODUCTION TO SEMICONDUCTOR OPTICS
Shur PHYSICS OF SEMICONDUCTOR DEVICES
Soclof DESIGN AND APPLICATIONS OF ANALOG INTEGRATED CIRCUITS
Streetman/Banerjee SOLID STATE ELECTRONIC DEVICES SEVENTH EDITION
Verdeyen LASER ELECTRONICS THIRD EDITION
Wolfe/Holonyak/Stillman PHYSICAL PROPERTIES OF SEMICONDUCTORS
About the Authors

Ben G. Streetman is Dean Emeritus of the Cockrell School of Engineering at

The University of Texas at Austin. He is an Emeritus Professor of Electrical
and Computer Engineering, where he held the Dula D. Cockrell Centennial
Chair. He was the founding Director of the Microelectronics Research Center
(1984–1996) and served as Dean of Engineering from 1996 to 2008. His teach-
ing and research interests involve semiconductor materials and devices. After
receiving a Ph.D. from The University of Texas at Austin (1966) he was on
the faculty (1966–1982) of the University of Illinois at Urbana-Champaign.
He returned to The University of Texas at Austin in 1982. His honors include
the Education Medal of the Institute of Electrical and Electronics Engineers
(IEEE), the Frederick Emmons Terman Medal of the American Society for
Engineering Education (ASEE), and the Heinrich Welker Medal from the
International Conference on Compound Semiconductors. He is a member of
the National Academy of Engineering and the American Academy of Arts
and Sciences. He is a Fellow of the IEEE and the Electrochemical Society. He
has been honored as a Distinguished Alumnus of The University of Texas at
Austin and as a Distinguished Graduate of the UT College of Engineering.
He has received the General Dynamics Award for Excellence in Engineering
Teaching, and was honored by the Parents’ Association as a Teaching Fellow
for outstanding teaching of undergraduates. He has served on numerous pan-
els and committees in industry and government, and several corporate boards.
He has published more than 290 articles in the technical literature. Thirty-
four students of Electrical Engineering, Materials Science, and Physics have
received their Ph.D.s under his direction.
xviii About the Authors

Sanjay Kumar Banerjee is the Cockrell Chair Professor of Electrical and

Computer Engineering, and Director of the Microelectronics Research Center
at The University of Texas at Austin. He received his B.Tech. from the Indian
Institute of Technology, Kharagpur, and his M.S. and Ph.D. from the University
of Illinois at Urbana-Champaign in 1979, 1981, and 1983, respectively, in
electrical engineering. He worked at TI from 1983–1987 on the world’s first
4Megabit DRAM, for which he was a co-recipient of an ISSCC Best Paper
Award. He has more than 900 archival refereed publications and conference
papers, 30 U.S. patents, and has supervised over 50 Ph.D. students. His hon-
ors include the NSF Presidential Young Investigator Award (1988), the Texas
Atomic Energy Centennial Fellowship (1990–1997), Cullen Professorship
(1997–2001), and the Hocott Research Award from the University of Texas.
He has received the ECS Callinan Award (2003), Industrial R&D 100 Award
(2004), Distinguished Alumnus Award, IIT (2005), IEEE Millennium Medal
(2000) and IEEE Andrew S. Grove Award (2014). He is a Fellow of IEEE,
APS and AAAS. He is interested in beyond-CMOS nanoelectronic transistors
based on 2D materials and spintronics, fabrication and modeling of advanced
MOSFETs, and solar cells.
Solid State Electronic Devices
This page intentionally left blank
Chapter 1

Cr ystal Properties and Growth

of Semiconductors

Objectives
1. Describe what a semiconductor is
2. Perform simple calculations about crystals
3. Understand what is involved in bulk Czochralski and ­thin-​­film epitaxial
crystal growth
4. Learn about crystal defects

In studying solid state electronic devices we are interested primarily in the

electrical behavior of solids. However, we shall see in later chapters that the
transport of charge through a metal or a semiconductor depends not only
on the properties of the electron but also on the arrangement of atoms in
the solid. In this chapter we shall discuss some of the physical properties of
semiconductors compared with other solids, the atomic arrangements of vari-
ous materials, and some methods of growing semiconductor crystals. Topics
such as crystal structure and crystal growth technology are often the subjects
of books rather than introductory chapters; thus we shall consider only a few
of the more important and fundamental ideas that form the basis for under-
standing electronic properties of semiconductors and device fabrication.

Semiconductors are a group of materials having electrical conductivities 1.1

intermediate between metals and insulators. It is significant that the conduc- Semiconductor
tivity of these materials can be varied over orders of magnitude by changes Materials
in temperature, optical excitation, and impurity content. This variability of
electrical properties makes the semiconductor materials natural choices for
electronic device investigations.
Semiconductor materials are found in column IV and neighboring
columns of the periodic table (Table 1–1). The column IV semiconductors,
silicon and germanium, are called elemental semiconductors because they are
composed of single species of atoms. In addition to the elemental materials,
compounds of column III and column V atoms, as well as certain combina-
tions from II and VI, and from IV, make up the compound semiconductors.
1
2 Chapter 1

As Table 1–1 indicates, there are numerous semiconductor materi-

als. As we shall see, the wide variety of electronic and optical properties of
these semiconductors provides the device engineer with great flexibility in
the design of electronic and optoelectronic functions. The elemental semi-
conductor Ge was widely used in the early days of semiconductor devel-
opment for transistors and diodes. Silicon is now used for the majority of
rectifiers, transistors, and integrated circuits (ICs). However, the compounds
are widely used in ­high-​­speed devices and devices requiring the emission or
absorption of light. The ­two-​­element (binary) ­III–​­V compounds such as GaN,
GaP, and GaAs are common in ­light-​­emitting diodes (LEDs). As discussed in
Section 1.2.4, ­three-​­element (ternary) compounds such as GaAsP and ­four-​
­element (quaternary) compounds such as InGaAsP can be grown to provide
added flexibility in choosing materials properties.
Fluorescent materials such as those used in television screens usu-
ally are ­II–​­VI compound semiconductors such as ZnS. Light detectors are
commonly made with InSb, CdSe, or other compounds such as PbTe and
HgCdTe. Si and Ge are also widely used as infrared and nuclear radiation
detectors. ­Light-​­emitting diodes are made using GaN and other ­III–​­V com-
pounds. Semiconductor lasers are made using GaAs, AlGaAs, and other ter-
nary and quaternary compounds.
One of the most important characteristics of a semiconductor, which
distinguishes it from metals and insulators, is its energy band gap. This property,
which we will discuss in detail in Chapter 3, determines among other things the
wavelengths of light that can be absorbed or emitted by the semiconductor.
For example, the band gap of GaAs is about 1.43 electron volts (eV), which

table 1–​­1 Common semiconductor materials: (a) the portion of the periodic table where
semiconductors occur; (b) elemental and compound semiconductors.
(a) II III IV V VI
B C N
Al Si P S
Zn Ga Ge As Se
Cd In Sb Te
Binary ­III–​­V Binary ­II–​­VI
(b) Elemental IV compounds compounds compounds
Si SiC AlP ZnS
Ge SiGe AlAs ZnSe
AlSb ZnTe
GaN CdS
GaP CdSe
GaAs CdTe
GaSb
InP
InAs
InSb
 Crystal Properties and Growth of Semiconductors 3

corresponds to light wavelengths in the near infrared. In contrast, GaP has a

band gap of about 2.3 eV, corresponding to wavelengths in the green portion
of the spectrum.1 The band gap Eg for various semiconductor materials is listed
along with other properties in Appendix III. As a result of the wide variety
of semiconductor band gaps, LEDs and lasers can be constructed with wave-
lengths over a broad range of the infrared and visible portions of the spectrum.
The electronic and optical properties of semiconductor materials are
strongly affected by impurities, which may be added in precisely controlled
amounts. Such impurities are used to vary the conductivities of semicon-
ductors over wide ranges and even to alter the nature of the conduction
processes from conduction by negative charge carriers to positive charge
carriers. For example, an impurity concentration of one part per million can
change a sample of Si from a poor conductor to a good conductor of electric
current. This process of controlled addition of impurities, called doping, will
be discussed in detail in subsequent chapters.
To investigate these useful properties of semiconductors, it is necessary
to understand the atomic arrangements in the materials. Obviously, if slight
alterations in purity of the original material can produce such dramatic changes
in electrical properties, then the nature and specific arrangement of atoms in
each semiconductor must be of critical importance. Therefore, we begin our
study of semiconductors with a brief introduction to crystal structure.

In this section we discuss the arrangements of atoms in various solids. We 1.2

shall distinguish between single crystals and other forms of materials and Crystal Lattices
then investigate the periodicity of crystal lattices. Certain important crys-
tallographic terms will be defined and illustrated in reference to crystals
having a basic cubic structure. These definitions will allow us to refer to
certain planes and directions within a lattice. Finally, we shall investigate the
diamond lattice; this structure, with some variations, is typical of most of the
semiconductor materials used in electronic devices.

1.2.1 Periodic Structures

A crystalline solid is distinguished by the fact that the atoms making up the
crystal are arranged in a periodic fashion. That is, there is some basic arrange-
ment of atoms that is repeated throughout the entire solid. Thus the crystal
appears exactly the same at one point as it does at a series of other equivalent
points, once the basic periodicity is discovered. However, not all solids are
crystals (Fig. ­1–​­1); some have no periodic structure at all (amorphous solids),
and others are composed of many small regions of ­single-​­crystal material
(polycrystalline solids). The ­high-​­resolution micrograph shown in Fig. ­6–​­33
illustrates the periodic array of atoms in the s­ ingle-​­crystal silicon of a transis-
tor channel compared with the amorphous SiO2 (glass) of the oxide layer.

For GaAs, l = 1.24>1.43 = 0.87 om.

1
The conversion between the energy E of a photon of light (eV) and its wavelength l (om) is l = 1.24>E.
4 Chapter 1

(a) Crystalline (b) Amorphous (c) Polycrystalline

Figure 1–​­1
Three types of solids, classified according to atomic arrangement: (a) crystalline and (b) amorphous
materials are illustrated by microscopic views of the atoms, whereas (c) polycrystalline structure is
illustrated by a more macroscopic view of adjacent ­single-​­crystalline regions, such as (a).

The periodicity in a crystal is defined in terms of a symmetric array of

points in space called the lattice. We can add atoms at each lattice point in
an arrangement called a basis, which can be one atom or a group of atoms
having the same spatial arrangement, to get a crystal. In every case, the lattice
contains a volume or cell that represents the entire lattice and is regularly
repeated throughout the crystal. As an example of such a lattice, Fig. ­1–​­2
shows a ­two-​­dimensional arrangement of atoms called a rhombic lattice,
with a primitive cell ODEF, which is the smallest such cell. Notice that we
can define vectors a and b such that if the primitive cell is translated by inte-
gral multiples of these vectors, a new primitive cell identical to the original
is found (e.g., O'D'E'F'). These vectors, a and b (and c if the lattice is three
dimensional), are called the primitive vectors for the lattice. Points within the
lattice are indistinguishable if the vector between the points is

r = pa + qb + sc (­1–​­1)

where p, q, and s are integers. The primitive cell shown has lattice points only
at the corners of the cell. The primitive cell is not unique, but it must cover

P Q

D' E'
T

O'
S R F'
Figure 1–​­2
A ­two-​­dimensional D E
r
lattice showing
translation of b
a unit cell by
r = 3a + 2b. O a F
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 Soak the gelatine in the milk for two hours. Beat up the eggs till
very light. Add the sugar and beat again. Bring the milk and gelatine
to the boil. Pour over the eggs and sugar. Strain. Put on the fire in a
double boiler and stir till thick; but do not allow it to boil. Add the
vanilla and pour into a wet mould.

*Strawberry Sponge
1 quart strawberries
Powdered sugar
4 whites of eggs
¹⁄₂ pint boiling water
1 oz. isinglass
Mash the strawberries with sufficient sugar to sweeten and set
them aside for about an hour. Boil the water and two ounces of sugar
for twenty minutes. Add the gelatine which has been soaked for an
hour in a little cold water. Remove from the fire and strain. Put the
strawberries through a fine sieve. Add the syrup gradually, beating
hard for five minutes. Beat the whites to a stiff froth. Add them to the
strawberries and beat till the mixture begins to set. Put into a wet
mould. Serve with whipped cream.

*King’s Soufflé

¹⁄₂ lb. powdered sugar

3 small lemons
3 eggs
¹⁄₂ pint whipped cream
³⁄₄ oz. gelatine
¹⁄₂ gill water
Beat the yolks of the eggs. Add to them the sugar, the juice of
three lemons, and grated rind of two. Pour into a double-boiler, and
whisk continually until the mixture thickens. Do not let it boil. Strain
and set aside to cool. Melt the gelatine in the water, and add it to the
cold egg mixture. Add the cream and the whites whipped to a stiff
froth. Whip lightly together, and when beginning to set, pour into a
mould. Garnish with crystallised violets or rose-leaves.
 Pastry
PAGE
Plain Pastry—I. 125
” ” II. 125
” ” (Short) 125
Puff Pastry 126
Rich Crust 126
Short Crust for Tartlets 127
Biscuit Paste for Tartlets 127

General Directions
In making pastry, the colder the hands of the maker, the water and
the room, the better. A marble slab is the best thing on which to
make it: otherwise a hard board which is kept for pastry only should
be used.
Use iced water for mixing, when possible. Pastry will be flakier if
set on ice before it is finally rolled out for use. The flour used should
be very dry and should be sifted with a little salt. Use the best flour
only and fresh butter, or half butter, half lard.
Use as little water as possible.
Never knead pastry.
Use the hands as little as possible. Mix with a knife unless
otherwise specified.
Bake in a moderate or quick oven.
 Baking powder, in the proportion of one tea-spoon to each quart of
flour, may be added when eggs are not used. The baking powder
should be sifted twice with the flour before mixing.
It is better to bake pastry separately from the fruit when possible. It
will thus be much crisper. To do this fill the dish which is to be used
with stiff crumpled paper, over which a smooth and well-buttered
piece should be laid. Cover with the pastry and bake. Remove the
pastry and fill the dish with well-sweetened stewed fruit. Moisten the
edges of the dish with white of egg and replace the crust.
In making open tarts and tartlets, when the tin is lined with pastry it
can be filled with rice and baked. This is in order to keep the crust
crisp. The rice must be taken out and the fruit or jam put in its place
just before serving.

Plain Pastry—I
12 ozs. flour
3 ozs. butter
3 ozs. lard
Salt
Cut up the lard and butter, very finely, in the flour. With a knife, mix
with a little water. Roll and fold up three or four times.

Plain Pastry—II
1 lb. flour
¹⁄₂ lb. butter
Cold water
Rub the butter into the flour. Add cold water gradually to make a
stiff paste, mixing with a knife. Roll out quickly.

*Plain Pastry Crust—III

 (For Tarts)
4 ozs. butter
2 ozs. lard
10 ozs. flour
Beat the butter to a cream. Rub butter and lard very carefully into
the flour, adding a little salt. Mix with as little water as possible.

*Puff Pastry
1 lb. fresh butter
1 lb. dry sifted flour
Salt
Work the flour well with a little water into a still dough. Flour the
pastry board slightly. Roll out the dough until one inch thick. Flatten
the butter and put in the centre of the dough. Fold the edges up over
the butter and roll out very lightly five times, always rolling outwards,
and using as little flour as possible on the board. The butter must on
no account be allowed to work through the paste. Set aside in a cold
place, or on ice, for at least an hour. When making tarts, &c., cut off
a piece at a time, instead of using the whole quantity, and roll out
very lightly. Bake in a rather hot oven. This is a simple and excellent
receipt.

*Rich Crust—IV
10 ozs. flour
8 ozs. butter
Juice of a lemon
Rub two ounces of the butter into the flour. Mix with the lemon
juice and a little water. Divide the rest of the butter into three parts.
Roll out the paste half an inch thick. Cut one lot of butter into small
pieces and dab them on the paste. Fold it over three times
lengthwise, and then three times the other way. Roll out again.
Repeat the process twice, when the butter will be used up.
 This receipt may be made with baking powder (see General
Directions).

*Short Crust—V
(For Tartlets)
1 lb. flour
³⁄₄ lb. butter
2 table-spoons powdered sugar
Yolks of 3 eggs
Water
Salt
Rub the butter into the flour and sugar. Beat the yolks with a little
water. Stir into the flour with a knife until smooth.

Biscuit Paste—VI
(For Open Tarts and Tartlets)
1 lb. flour
¹⁄₄ lb. sugar
6 yolks
Milk
Sift the flour and sugar together. Stir in the eggs with a knife. Make
into a stiff paste with some milk (about 1 gill).
 Open Tarts and Tartlets
PAGE
Almond Tartlets—I. 129
” ” II. 129
Chocolate Cream Tartlets 130
Cream Tartlets 130
Cream and Fruit Tartlets 131
Fruit Tartlets 132
Lemon Cheesecakes 132
Mincemeat 133
Orange Tartlets 133
Strawberry Tartlets 134

Almond Tartlets—I

¹⁄₄ lb. sweet almonds

5 ozs. powdered sugar
10 drops vanilla
6 whites of eggs
A few drops of lemon juice
Blanch and pound the almonds with the lemon juice. Add the
sugar. Whip the whites to a stiff froth. Stir in the almonds, sugar and
vanilla. Bake in a moderate oven in patty pans lined with puff pastry.

Almond Tartlets—II
 5 ozs. potato flour
8 yolks
3 whites
2¹⁄₂ ozs. butter
2 lemons
2¹⁄₂ ozs. sweet almonds
¹⁄₄ oz. bitter almonds
Blanch and pound the almonds. Melt the butter. Grate the rind of
the lemons. Beat the yolks. Mix all thoroughly together except the
whites. Beat them to a froth, and stir them in last.
Line two round tins with short crust (see p. 127). Spread it with
apricot jam, and pour the almond mixture over it. Bake in a slow
oven.

Chocolate Cream Tartlets

1 pint milk
1¹⁄₂ ozs. grated chocolate
1¹⁄₂ ozs. flour
¹⁄₄ lb. powdered sugar
1 oz. butter
4 eggs
Boil the chocolate and milk together. Stir in the flour, mixed smooth
in a little cold milk. Stir until it thickens. Strain. Pour over the well
beaten yolks. Add the sugar and butter. Stir over the fire until just
below boiling point.
Line small tins with a short crust. Fill with the cream and bake.
Make a meringue of two whites and two table-spoons of powdered
sugar (see p. 4). Put in the oven to brown slightly.

Cream Tartlets
 1 pint cream
¹⁄₂ pint milk
2 ozs. powdered sugar
Peel of one lemon
8 yolks
Put the cream and milk into a sauce-pan. When they boil, add the
sugar, the very finely-pared lemon peel and a little salt. Stir for a few
moments. Pour the cream over the well beaten yolks. Set back on
the fire. When thick, strain into a basin. Set aside in a cool place till
wanted. Line some small tins with puff paste. Fill with uncooked rice.
Bake. Take out the rice and fill with custard. Sprinkle with lemon
sugar (see p. 164).

Cream and Fruit Tartlets

For cream:—
1 tea-cup cream or milk
2 whites of eggs
1 table-spoon powdered sugar
¹⁄₂ tea-spoon cornflour
Line a dish with short crust. Fill it closely with raspberries,
strawberries, cherries or other fruit and sufficient sugar. Cover with
crust, but do not press it down round the edges. When baked, lift off
the upper crust and fill with cream.
Cream.—Scald the milk or cream. Add the whites beaten to a stiff
froth, the sugar and the cornflour mixed smooth with a little cold milk.
Boil three minutes, stirring continually. Set aside until quite cold.

Fruit Tartlets
Stew the fruit until tender, taking care to keep it whole, in plenty of
water and sugar. Take out the fruit gently with a skimmer when done.
Add a few drops of lemon juice to the syrup. Boil it until reduced to a
thick syrup. Line several small tins with a short crust (No. IV. or V.).
Fill with uncooked rice and bake. Take out the rice. Arrange the fruit
in them and pour the syrup over.

Lemon Cheesecakes

¹⁄₄ lb. butter

1 lb. loaf sugar
6 eggs
3 lemons
Melt the sugar in the lemon juice. Add the butter, eggs (taking out
the whites of two) and the grated rind of two lemons. Stir until thick
and of the consistency of honey. A few pounded almonds may be
added.
Line small tins with puff or short pastry, fill with the mixture and
bake.

Mincemeat
2 lbs. suet
3 lbs. raisins
2 lbs. sultanas
2 lbs. currants
1 lb. mixed candied peel
2 lbs. moist sugar
1 dozen sour apples
4 lemons, grated peel and juice
2 tea-spoons mixed spice
2 ” ground ginger
¹⁄₄ lb. pounded sweet almonds
2 grated nutmegs
¹⁄₂ pint brandy
¹⁄₂ pint sherry
 Mix the sugar, spices and very finely-chopped suet. Chop the fruit,
and peel as fine as possible. Mix all well together, adding the brandy
and wine last. It is best made several weeks before using.

Orange Tartlets
7 oranges
¹⁄₂ pint syrup
1 lemon
Puff or short paste
Peel six oranges. Scrape off all the white skin with a sharp knife.
Divide into sections, removing all the rest of the white and seeds.
Drop them very carefully into boiling syrup (see p. 151) and let them
simmer three minutes. Take the pieces out gently, and set them on a
sieve to drain over a basin.
To the syrup add the juice of an orange and lemon and the juice
that drains from the cooked oranges. Reduce it by boiling till very
thick.
Line some patty pans with short or puff paste. Fill them with
uncooked rice and bake quickly. Remove the rice, arrange the
oranges on the pastry and pour the syrup over them just before
serving.

Strawberry Tartlets
1 lb. loaf sugar
1 gill water
1 wine-glass brandy or sherry
Strawberries
Make a syrup of the sugar and water. Add the brandy or sherry.
Reduce until thick. Pour this syrup over a number of fine
strawberries.
 Line some small tins with short crust (No. 125). Fill them with
uncooked rice and bake in a quick oven.
Turn out the rice and fill with the strawberries and syrup. Serve
hot.
 American Pies
PAGE
Apple Pie 137
Cocoanut Pie 137
Custard Pie 138
Lemon Pie—I. 138
” ” II. 139
Mincemeat 140
Mock Mincemeat 141
Pine-Apple Pie 141

General Directions
The following American receipts are all good. Care, however, must
be taken in baking that there is a good bottom heat, or the under
crust will be sodden.
The pies should be made in shallow tins about 8 to 9 inches in
diameter. Puff paste may be used; but No. II. pastry (see p. 125) is
very satisfactory. It should be rolled very thin.
Where a covering of pastry is used, it should be slit across the
centre in three places, about two inches long, to allow the steam to
escape.

Apple Pie
1 lb. sour apples
7 ozs. brown sugar
 Roll out pie crust No. II. very thin. Line a tin with it. Pare and core
the apples and cut them in thin sections. Arrange them symmetrically
on the undercrust. Add the sugar. Cover with a thin overcrust,
moistening it with water at the edges and pressing down. Make three
slits about two inches long in the centre of the crust to allow the
steam to escape. Bake in a moderate oven.
Wellington apples should be used, if possible.

Cocoanut Pie

¹⁄₂ lb. grated cocoanut

³⁄₄ lb. powdered sugar
6 ozs. butter
5 whites of eggs
2 table-spoons rose water
1 gill white wine
Cream the butter and sugar. Beat for fifteen minutes with the
rosewater and wine. Stir in the cocoanut and then the whites, beaten
to a stiff froth, lightly and quickly. Pour into a tin lined with No. II.
pastry or puff pastry. Serve cold, sprinkled with powdered sugar.

Custard Pie
3 eggs
1 table-spoon sifted flour
3 table-spoons powdered sugar
1 tea-spoon vanilla
1 pint scalded milk
Beat the yolks till light and creamy. Sift the sugar and flour
together. Add it to the yolks. Add a little salt and the vanilla. Beat the
whites to a stiff froth. Whip them in. Add the cold scalded milk
gradually. Put into a tin lined with puff pastry. Bake thirty minutes.
 Lemon Pie—I
2 lemons
3 eggs
2 table-spoons flour
12 ozs. powdered sugar
1 pint water
1 oz. butter
Grate the rind of the lemons. Pare off with a sharp knife all the
white skin. Cut the lemons into very small pieces, removing all skin
and pips. Put them in an enamelled saucepan. Add the sugar, flour
and two-thirds of the grated rind and the water. When hot, stir in the
beaten eggs. Remove from the fire when just below boiling point. Stir
in the butter. When cold, pour into a tin lined with thin pastry. Cover
with pastry and bake.

Lemon Pie—II
2 lemons
1¹⁄₂ cups powdered sugar
1 table-spoon corn-flour
3 eggs
2 cups of water
Butter size of a walnut
Mix the sugar, flour and grated rind of the lemons thoroughly. Beat
the yolks till light and creamy. Add to the sugar and beat well. Stir in
the water. Set on the fire in a double boiler. Stir continually. When
hot, add the butter. Stir till thick but do not allow it to boil. When cool
pour it into a rather deep tin lined with No. II. pastry or puff pastry,
and bake. Whip the whites to a froth, adding gradually three table-
spoons powdered sugar. Spread on the pie when cold. Put in the
oven to brown a little. Serve cold.

Mincemeat
 ³⁄₄ lb. meat
1 lb. suet
2 lbs. raisins
1 lb. currants
4¹⁄₂ lbs. chopped apples
1 lb. golden syrup
2¹⁄₂ lbs. brown sugar
¹⁄₂ lb. mixed peel
¹⁄₂ table-spoon salt
¹⁄₂ tea-spoon white pepper
1 nutmeg, grated
¹⁄₂ tea-spoon ground cloves
1 tea-spoon ground cinnamon
1 bottle sherry
¹⁄₂ pint brandy
Use lean beef. Chop very fine and remove all gristle and fat. Mix
all well together, adding the wine and brandy last.
Bake as directed for apple pie or in small covered tarts, using No.
II. pastry.
Add a little lemon-juice to the mincemeat each time it is used.

Mock Mincemeat
6 toast biscuits
¹⁄₂ pint molasses or syrup
¹⁄₂ pint brown sugar
¹⁄₂ pint cider vinegar
³⁄₄ pint melted butter
¹⁄₂ pint chopped raisins
¹⁄₂ pint currants
 2 well beaten eggs
1 dessert-spoon allspice
¹⁄₂ tea-spoon grated nutmeg
¹⁄₂ tea-spoon cloves
1 tea-spoon salt
¹⁄₂ tea-spoon black pepper
1 gill brandy
Crush the biscuits. Mix all well together, adding the brandy last of
all.

Pine-Apple Pie

¹⁄₂ lb. grated pine-apple

¹⁄₂ lb. powdered sugar
¹⁄₄ lb. butter
1 gill thick cream
3 eggs
Beat the butter until creamy. Add the sugar and beaten yolks,
beating all till very light. Whip the cream. Add it to the grated pine-
apple. Beat the whites to a stiff froth. Stir them lightly in. Mix
altogether. Bake with an undercrust of puff pastry or a short crust.
 Ices
General Directions
If a machine is used (and the best should be obtained) it will take
about half an hour to freeze a cream or water ice. The cylinder
should be set in the pail filled with finely crushed ice and rock salt, in
the proportion of one part of salt to three or four of ice. To break the
ice, wrap carefully in a flannel and pound it with a hammer or flat iron
until it is broken into very small pieces. Pack it solidly round the
cylinder in layers of about three inches, divided by layers of salt. As it
is most important that there should be sufficient salt, it is best to
measure both ice and salt accurately with a saucer. The cylinder
should be turned slowly for the first ten minutes, then quickly. When
the mixture is frozen take out the metal beater, scrape the ice from
the sides of the cylinder, beat it well and pack it firmly down. Put on
the cover, fix the cylinder down into the pail, and cover with a piece
of old felt or carpeting which has been wetted with salt and water.
Leave until it is required.
Water should not be drawn off from the pail until there is so much
that the cylinder begins to float. When it does, draw off the water and
add more salt and ice.
If the ice is to be put into a mould, beat it well and pack firmly into
the mould. Cover closely and pack in ice.
Care must be taken in removing the cover of a cylinder or mould
that none of the salt mixture falls into the ice.
Ices can easily be made without a machine. The cylinder is
replaced by a long round biscuit or coffee tin, about four inches in
diameter. Put the tin in a pail. Pack it round with ice and salt as
above. Pour the mixture which is to be frozen into the tin and beat it
hard for ten minutes. Put on the lid firmly. Cover it with ice and then
cover the whole thing with a thick blanket or piece of carpet. Leave it
for an hour. Remove the ice on lid of the tin, wipe it and take it off.
Scrape off the frozen mixture at the sides and beat very hard again
for ten minutes. Replace the cover, ice, salt and blanket, and leave
for five or six hours, only looking occasionally to see if the water
must be drawn off and more ice and salt added. This, although a
lengthy process, is very simple and inexpensive and most
successful.
For beating, a long wooden spatula, thin at the end and about the
size of a carving knife, should be used.
It is essential that rock salt and not common salt be used. Snow
can be used instead of ice, but is not quite so good.
To take out ice, dip the cylinder quickly in hot water and shake it
gently.
Scald the tins in which ices are made directly they are emptied,
and dry in the oven.
If cream ices are to be put in moulds it will be found more
satisfactory to add to them a little dissolved gelatine in the proportion
of ¹⁄₂ oz. of gelatine to two quarts of cream.
Cream ices are excellent served with a hot chocolate, fruit, or wine
sauce. The sauce should be served separately.
 Cream Ices
PAGE
Cream Ice—I. 146
” ” II. 146
Brown Bread Cream Ice 147
Caramel Cream Ice 147
Chestnut Cream Ice 148
Coffee Cream Ice 148
Fruit Cream Ice 148
Strawberry Cream Ice 149
Tutti Frutti 149

*Cream Ice—I
1 quart cream
1 cup powdered sugar
1 table-spoon vanilla
Scald the cream. Add the sugar. When it is melted set aside to
cool. Flavour when cold. Freeze.
The whites of three eggs beaten to a foam, but not stiff, may be
added to the cream just before it is put into the freezer.

Cream Ice—II
(Frozen Custard)