P-N Junction Diode

Diode A semiconductor device that controls the direction of the

current flow
Diode The schematic symbol for a semiconductor diode is shown
Diode It is made by joining p-type and n-type semiconductor
materials
Diode p-type has holes while n-type has free electrons
Diode Ions are created between the junction of p-type and n-
type
 External voltage forces free electrons from the n-side
Forward Bias across the depletion zone to the p-side where the
electrons fall into a hole
Forward Bias Once on the p-side, the electrons jump from hole to hole
in the valence band
Reverse Bias External voltage pulls majority current carriers away from
the p-n junction. This widens the depletion zone.
Reverse Bias Even a reverse-biased diode conducts a small amount of
current, called leakage current.
Reverse Bias The leakage current is mainly due to the minority current
carriers in both sections of the diode.
Volt-Ampere
Characteristic Curve
Volt-Ampere
Characteristic
Curve
DC Resistance of a
Diode

• The graph of VF versus IF shows that a

diode is a nonlinear device because the
diode current, IF, does not increase in
direct proportion to the diode voltage,
VF.
DC Resistance of a
Diode

• The dc resistance of a forward-biased

diode can be calculated using

𝑉𝐹
𝑅𝐹 =
𝐼𝐹
DC Resistance of a
Diode (Example)
• For the diode curve given, determine the
dc resistance of the diode at 0.7 V
DC Resistance of a
Diode (Example)
• For the diode curve given, determine the
dc resistance of the diode at 0.65 V
Diode Characteristic
Curve

• The forward-biased region on the graph

can be described by the following
equation:

𝑞𝑉
𝐼= 𝐼0 𝑒 𝑘𝑇 −1
Diode
Approximations
First Approximation

• The graph indicates the ideal

forward- and reverse-bias
characteristics. The first
approximation is sometimes
called the ideal diode
approximation
 • The first approximation treats a forward-
biased diode like a closed switch with a
First voltage drop of zero volts
Approximation
 • The first approximation treats a reverse-
biased diode like an open switch with
First zero current.
Approximation
Sample Problem
• In the figure below, solve for the load voltage and current using the
first diode approximation
Sample Problem
• In the figure below, solve for the load voltage and current using the
first diode approximation
Sample Problem
• In the figure below, solve for the load voltage and current using the
first diode approximation

5V 25 Ω
Second
Approximation
• The graph indicates the forward-
and reverse-bias characteristics
of the second approximation.
The second approximation is
used if more accurate answers
are needed for circuit
calculations
 • The second approximation treats a
forward-biased diode like an ideal diode
Second in series with a battery
Approximation
 • The second approximation of a reverse-
biased diode is an open switch
Second
Approximation
Sample Problem
• In the figure below, solve for the load voltage and current using the
second diode approximation
Sample Problem
• In the figure below, solve for the load voltage and current using the
second diode approximation
Sample Problem
• In the figure below, solve for the load voltage and current using the
second diode approximation

6V 12 Ω
Sample Problem
• In the figure below, solve for the load voltage and current using the
second diode approximation

0.5 V 4Ω
Third
Approximation
• The third approximation of a
diode includes the bulk
resistance, designated rB. The
bulk resistance, rB, is the
resistance of the p and n
materials.
Third
Approximation
• Notice the small leakage current
in the graph of below when the
diode is reverse-biased. This is a
result of the high resistance that
exists when the diode is reverse-
biased.
 • The third approximation of a forward-
biased diode. The total diode voltage
Third drop using the third approximation is
Approximation calculated using the formula
𝑉𝐹 = 𝑉𝐵 + 𝐼𝐹𝑟𝐵
 • The bulk resistance, rB, causes the
forward voltage across a diode to
Third increase slightly with increases in the
Approximation diode current
 • The figure below shows the third
approximation of a reverse-biased diode.
Third The resistance across the open switch
Approximation illustrates the high leakage resistance for
the reverse-bias condition.
Sample Problem
• In the figure below, solve for the load voltage and current using the
third diode approximation
RB = 2.5 Ω
Sample Problem
• In the figure below, solve for the load voltage and current using the
third diode approximation
Sample Problem
• In the figure below, solve for the load voltage and current using the
second diode approximation
RB = 1.5 Ω

3V 10 Ω
More on Bulk Resistance
• The graph shows the forward- and
reverse-bias characteristics included
with the third approximation. The
value of the bulk resistance, rB, can
be determined by using formula

∆𝑉 𝑉2 − 𝑉1
𝑟𝑏 = =
∆𝐼 𝐼2 − 𝐼1
Sample Problem
• What is the bulk resistance of a silicon diode with the following set of
values:
• When V1 = 0.8 Volts, the current is 100 mA
• When V2 = 0.72 Volts, the current is 40 mA
Sample Problem
• A silicon diode has a forward voltage drop of 1.1 V for a forward diode
current, IF, of 1 A. Calculate the bulk resistance, rB