PolarHTTM IXTQ 120N15P VDSS = 150 V

IXTT 120N15P ID25 = 120 A

Power MOSFET RDS(on) ≤ Ω
16 mΩ

N-Channel Enhancement Mode

Avalanche Rated

Symbol Test Conditions Maximum Ratings TO-3P (IXTQ)

VDSS TJ = 25° C to 175° C 150 V
VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 150 V

VDSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC = 25° C 120 A G

D (TAB)
ID(RMS) External lead current limit 75 A S
IDM TC = 25° C, pulse width limited by TJM 260 A
IAR TC = 25° C 60 A
EAR TC = 25° C 60 mJ TO-268 (IXTT)
EAS TC = 25° C 2.0 J

dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns

TJ ≤150° C, RG = 4 Ω G
S D (TAB)
PD TC = 25° C 600 W
TJ -55 ... +175 °C
G = Gate D = Drain
TJM 175 °C S = Source TAB = Drain
Tstg -55 ... +150 °C

TL 1.6 mm (0.062 in.) from case for 10 s 300 °C

TSOLD Plastic body for 10 s 260 °C

Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in. Features

Weight TO-3P 5.5 g l

International standard packages
TO-268 5.0 g l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
Symbol Test Conditions Characteristic Values - easy to drive and to protect
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 150 V
Advantages
VGS(th) VDS = VGS, ID = 250µA 3.0 5.0 V
l
Easy to mount
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA l
Space savings
l
High power density
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 175° C 500 µA

RDS(on) VGS = 10 V, ID = 0.5 ID25 16 mΩ

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

© 2005 IXYS All rights reserved DS99280E(10/05)

 IXTQ 120N15P
IXTT 120N15P

Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline

(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 60 S

Ciss 4900 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
Crss 330 pF

td(on) 33 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 42 ns
td(off) RG = 4 Ω (External) 85 ns
tf 26 ns

Qg(on) 150 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 nC
Qgd 80 nC

RthJC 0.25° C/W

RthCS (TO-3P) 0.21 ° C/W

Source-Drain Diode Characteristic Values

(TJ = 25° C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
IS VGS = 0 V 120 A

ISM Repetitive 260 A TO-268 Outline

VSD IF = IS, VGS = 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = 25 A, -di/dt = 100 A/µs 150 ns

QRM VR = 100 V, VGS = 0 V 2.3 µC

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
 IXTQ 120N15P
IXTT 120N15P

Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics

@ 25ºC @ 25ºC
120 280
VGS = 10V VGS = 10V
9V 240
100

200 9V
80 8V
I D - Amperes

I D - Amperes
160
60 7V 8V
120

40
80
6V 7V
20 40
5V 6V
0 0
0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6 7 8 9 10
V D S - Volts V D S - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to 0.5 ID25

@ 150ºC Value vs. Junction Tem perature
120 2.8
VGS = 10V
2.6 VGS = 10V
9V
100 2.4
8V
R D S ( o n ) - Normalized

2.2
80
I D - Amperes

2 I D = 120A
7V
1.8
60
1.6 I D = 60A
6V 1.4
40
1.2

20 1
5V
0.8
0 0.6
0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 175
V D S - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Norm alized to 0.5 ID25 Fig. 6. Drain Current vs. Case
Value vs. Drain Current Tem perature
4 90

80 External Lead Current Limit

3.5 TJ = 175ºC
70
R D S ( o n ) - Normalized

3
60
I D - Amperes

2.5 50

VGS = 10V 40
2
VGS = 15V 30
1.5
20
1
10
TJ = 25ºC
0.5 0
0 30 60 90 120 150 180 210 240 270 300 -50 -25 0 25 50 75 100 125 150 175
I D - Amperes TC - Degrees Centigrade

© 2005 IXYS All rights reserved

 IXTQ 120N15P
IXTT 120N15P

Fig. 7. Input Adm ittance Fig. 8. Transconductance

210 90

80
180
70
150
60

g f s - Siemens
I D - Amperes

120 50

90 40 TJ = -40ºC
25ºC
TJ = 150ºC 30
60 150ºC
25ºC 20
30 -40ºC
10

0 0
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 30 60 90 120 150 180 210 240 270
V G S - Volts I D - Amperes

Fig. 9. Source Current vs.

Fig. 10. Gate Charge
Source-To-Drain Voltage
300 10

9 VDS = 75V
250 I D = 60A
8
I G = 10mA
7
200
I S - Amperes

VG S - Volts

150 5

4
100
3
TJ = 150ºC
2
50
TJ = 25ºC 1

0 0
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 160
V S D - Volts Q G - nanoCoulombs

Fig. 12. Forw ard-Bias

Fig. 11. Capacitance Safe Operating Area
10,000 1000
TJ = 175ºC
TC = 25ºC
R DS(on) Limit
Capacitance - picoFarads

Ciss
I D - Amperes

25µs

1,000 100
100µs
Coss
1ms

10ms

Crss
f = 1MHz
DC
100 10
0 5 10 15 20 25 30 35 40 10 100 1000
V DS - Volts V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
 IXTQ 120N15P
IXTT 120N15P

F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e

1.00
R( t h ) J C - ºC / W

0.10

0.01
0.1 1 10 100 1000
Pu ls e W id th - m illis e c o n d s

© 2005 IXYS All rights reserved

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