SKM 75GB12T4

Absolute Maximum Ratings  -1 2&  $       *

Symbol Conditions Values Units
IGBT
' 3 -1 2 5-.. 
 3 561 2  -1 2 55. (
 7. 2 8. (
9: 9: ; < =>: --1 (
' ? -. 
  @.. A  B 51 A 3 51. 2 5. D
' C 5-.. 
SEMITRANS® 2
Inverse Diode
E 3 561 2  -1 2 81 (
IGBT4 Modules  7. 2 61 (
E9: E9: ; < E=>: --1 (
E':  5. A  3 561 2 ;. (
SKM 75GB12T4
Module
9:' -.. (
3 F . G561 2
Target Data " F . G5-1 2
$ (& 5  ... 
Features
 -1 2&  $       *
      Characteristics
 Symbol Conditions min. typ. max. Units
       IGBT
     &  ; ( 1 1&7 @&1 
 !"   #$%&  $
'  &  ' 3 2 (
$ "
. 3 -1 2 .&7 .&8 
 '   "   ()
** ()  3 51. 2 .&6 .&7 
  51  3 -12 5 51&; H
Typical Applications 3 51.2 -.&6 -- H
 (     *     61 (&  51  3 -12$  5&71 -&.1 
 +,' 3 51.2$  -&-1 -& 1 
 $    $*      -.   & E
/!0    -1&  . 5 :!0 .&-8 E
  .&- E
I  F7J51 -1 
9  3 -1 2 5. K
*  
 9  @.. 
   61( 7&; L
*  9 3 51. 2 
 
 7&; L
93F    .&;7 MJN

GB

1 10-07-2007 SCH © by SEMIKRON

SKM 75GB12T4
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
E  E  61 (A  . 3 -1 2$  -&- -&1 
3 51. 2$  -&5 -& 1 
E. 3 -1 2 5&; 5&1 
3 51. 2 .&8 5&5 
E 3 -1 2 5- 5;&; H
3 51. 2 5@ 57 H
99: E  61 ( 3 51. 2 (
® I D
SEMITRANS 2
 1&@ L
93F   ** .&17 MJN
IGBT4 Modules
Freewheeling Diode
E  E  (A   3 2$  
E. 3 2 
SKM 75GB12T4
E 3 2 
99: E  ( 3 2 (
I D
Target Data  L
  ** MJN

Features Module
      ) -. ;. !
 9OGO   &   $F  -1 2 .&61 H
        5-1 2 5 H
   9F   *$ .&.1 MJN
 !"   #$%&  $
:     / :@ ; 1 =
$ "
 '   "   () :    $ :1 -&1 1 =
** ()   5@. "

Typical Applications
 (     * 
 +,'
This is an electrostatic discharge sensitive device (ESDS), international standard
 $    $*      -. IEC 60747-1, Chapter IX.
/!0
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.

GB

2 10-07-2007 SCH © by SEMIKRON

SKM 75GB12T4

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

3 10-07-2007 SCH © by SEMIKRON

SKM 75GB12T4

Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic

4 10-07-2007 SCH © by SEMIKRON

SKM 75GB12T4
UL recognized file no. E 63 532

 P@5

  P@5

5 10-07-2007 SCH © by SEMIKRON