EEE213 Power Electronics and Electromechanism

Controlled rectifiers
(Single-phase)

Dr. Suneel Kommuri

Email: Suneel.Kommuri@xjtlu.edu.cn

Dept. Electrical & Electronic Engineering

1
Outline
• Power Electronic Devices
– Thyristors
• SCR (Silicon Controlled Rectifier)
• Triac
• GTO (Gate Turn-Off)
– Static and dynamic characteristics
• Single phase-controlled rectifier
– Half-wave circuit (R & RL loading)
– Full-bridge rectifier (R, RL, & RLE)
• Continuous load current (RLE)
• Discontinuous load current (RLE)
– Summary

2
1.1 Power Electronic Devices
• Power electronic devices
– are the electronic devices that can be directly used in
the power processing circuits to convert or control
electric power.
• In broad sense
Vacuum devices
Power electronic devices
Semiconductor devices (focus in this module)

• Very often:
Power electronic devices = Power semiconductor devices

3
1.1.2 Power semiconductor devices
• Power Diode – uncontrollable Important feature
• Thyristor (THYRatron tube & transISTOR) Controllability

– SCR (Silicon Controlled Rectifier) – ON controllable

– TRIAC (Triode ac switch) – ON controllable
– GTO (Gate turn-off thyristor) – ON/OFF controllable
• Power Transistors – ON/OFF controllable
– Power BJT
– Power MOSFET
– IGBT
https://en.wikipedia.org/wiki/Power_semiconductor_device 4
1.1.2 Power semiconductor devices
• Terminals of a controllable power electronic device
Power in Power out
Device
Control
A third terminal – control terminal Two terminals to allow
terminal, to control the states high power current flow
of the device. through it.

Anode Cathode
(A) (K)
Control
(G)

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 1.1.3 Silicon Controlled Rectifier (可控硅)
• SCR acts as bi-stable switches, conducting when their gate
receives a current pulse, and continue to conduct for as long as
they are forward biased (that is, as long as the voltage across
the device has not reversed).
– Three-terminals: anode, cathode, gate

Symbol
K
G

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SCR in a rectification circuit
• SCR/Thyristor: Acts like a diode where you can select when
conduction will start, but not when it stops.
– Semi-controlled: we control the turn on point, but only turns off when
circuit conditions force it to.

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SCR Turn-On Analysis
• Two conditions must be met before the SCR can conduct:
1. The SCR must be forward biased (𝑣𝐴𝐾 > 0).
2. A current must be applied to the gate of SCR.

• A SCR is turned ON by increasing the anode current. This can be

accomplished in one of the following ways:
1. Forward voltage triggering
2. Gate triggering
3. The 𝑑𝑣/𝑑𝑡 triggering
4. Temperature triggering
5. Light triggering

8
Generic Switch Symbol

• Idealized switch symbol

– When on, current can flow only in the direction of the
arrow
– Instantaneous switching from one state to the other
– Zero voltage drop in on-state
– Infinite voltage and current handling capabilities
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 Induction problem – how this device evolved?
• Find a 3 terminal device (or design a circuit) to put in the
box to realize the following functions:
– Give a control signal to gate G to make the circuit conduct;
– Remove the control signal, the circuit keeps conduction.

R R R

?
c
D G b
G Q
G
vs vs e vs

Diode?? Transistor??
X Possible!
It is not a 3-terminal device & But, it cannot hold the conduction
cannot be controlled without control signal 10
Combined structure − Two transistors
• A PNP and a NPN transistors connected back-to-back as shown
below.
• They form a four-layer, 3 junction structure.
A A A
PNP
Q1 P1 P
J1
N1 N1 N
G G J2
P2 P2 P
G J3
Q2 N2 N
NPN

K K K
• When 𝑉𝐴𝐾 > 0, J1 & J3 are forward biased, J3 is reverse biased, so
SCR cannot conduct.
• When 𝑉𝐴𝐾 < 0, J2 is forward biased, J1 & J3 are reverse biased, still
SCR cannot conduct.
• Therefore, without trigger, this device won’t conduct at all!!
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Two transistors forming a SCR
• Recall the knowledge of transistors
– When the transistors are conducting:

For a PNP transistor: For a NPN transistor:

e c
PNP
Q1 b b Q2
𝐼𝑏1 𝐼𝑏2
NPN
𝑉𝑒 > 𝑉𝑏 > 𝑉𝑐 𝑉𝑐 > 𝑉𝑏 > 𝑉𝑒
c e

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 Turn-on and turn-off procedures
• 1. Turn-on stage:
– Forward biased 𝑉𝐴 > 𝑉𝐾
A
– Trigger current 𝐼𝐺 :
PNP
Q1
R
• 2. Stable stage
– Forward biased
G
Q2
– No 𝐼𝐺 : NPN
S vs
• 3. Turn-off stage: K
EG
– When IA drops small enough

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Static characteristics (I-V curve)
+ vAK -
A K Turn-on:
iA • When 𝑖𝐺 = 0, no trigger current,
G forward biased but not conducting;
iG • When 𝑣𝐴𝐾 increases to 𝑉𝐵𝑅𝐹 , it
iA conducts;
• With 𝑖𝐺 ≠ 0, thyristor can be turned
on with smaller 𝑣𝐴𝐾 ;
• Larger 𝑖𝐺 , smaller 𝑣𝐴𝐾 ;
• Larger 𝑣𝐴𝐾 , smaller 𝑖𝐺 .
Increasing iG
IL Notice:
vAK • Voltage drop on the thyristor is 𝑉𝑇𝐻 , a
VTH VBRF constant value;
• Forward conduction loss is the slope of
the I-V line;
• Latching current is the lowest value of
𝑖𝐴 to support the conduction.
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 Static characteristics (I-V curve)
+ vAK -
A K Turn-off:
iA • Not controllable via 𝑖𝐺 ;
G • Turns off when 𝑖𝐴 has fallen small
iG enough, below the holding current 𝐼𝐻
iA • 𝐼𝐻 < 𝐼𝐿 ;
• Reducing 𝑣𝐴𝐾 helps, but not
crucial.

Reverse biases (blocked):

Increasing iG
IL • Not conducting, regardless of 𝑖𝐺 ;
IH • Reverse saturation current 𝐼𝑅𝑆 ;
VBR
vAK • Larger 𝑖𝐺 , larger 𝐼𝑅𝑆 ;
VTH VBRF
• When 𝑣𝐴𝐾 reaches reverse
breakdown voltage −𝑉𝐵𝑅 , thyristor
Increasing i G
breaks down.

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 2.1 Basic thyristor circuits I (R loading)
+ vAK -
• 1. Half-wave controlled rectifier iA iR

– In the positive half + iG +

a) vs R vo
• [0, 𝛼]: 𝑖𝑅 is zero, 𝑣𝑜 is zero; Gate current gives
- pulses at -
• [𝛼, 𝜋]: 𝑣𝑜 = 𝑣𝑠 = 𝑉𝑚 sin 𝜔𝑡; 𝜔𝑡 = 𝛼, 2𝜋 + 𝛼, …

𝑉𝑚
𝑖𝐴 = 𝑖𝑅 = sin 𝜔𝑡.
𝑅

– In the negative half

• [𝜋, 2𝜋]: 𝑖𝑅 drops to zero, 𝑣𝑜 is zero.

• Firing angle: α
• Conduction angle: 𝛾 = 𝜋 − 𝛼

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Phase Control
• In this circuit, the control of the output DC voltage is
realized by modifying the triggering pulse phase or firing
angle, this is called Phase Control.
• Change the firing angle α from 0 to π:

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Parameter evaluation (I)
1. Average output voltage 𝑉0 :
1 2𝜋 1 𝜋
𝑉0 = න 𝑣𝑜 𝑑𝜔𝑡 = න 𝑉𝑚 sin 𝜔𝑡 𝑑𝜔𝑡
2𝜋 0 2𝜋 𝛼
𝑉𝑚 𝜋 𝑉𝑚
= − cos 𝜔𝑡ቚ = cos 𝛼 + 1
2𝜋 𝛼 2𝜋
𝑉𝑚
• When 𝛼 = 0, 𝑉0 = = 0.318𝑉𝑚
𝜋
This is the maximum possible V0;
The same as simple diode rectifier;
𝑉𝑚
𝑉0 > 0
• When 𝛼 = 𝜋/2, 𝑉0 = = 0.159𝑉𝑚
2𝜋
Half of the maximum possible V0;
• When 𝛼 = 𝜋, 𝑉0 = 0
No trigger current in the positive half, so no conduction at all. 18
Parameter evaluation (II)
2. RMS output voltage 𝑉𝑅𝑀𝑆
1 2𝜋 2 1 𝜋 2
𝑉𝑅𝑀𝑆 = න 𝑣 𝑑𝜔𝑡 = න 𝑉𝑚 sin 𝜔𝑡 2 𝑑𝜔𝑡
2𝜋 0 𝑜 2𝜋 𝛼

𝑉𝑚2 𝜋 1 − cos 2𝜔𝑡 𝑉𝑚 1 𝜋

= න 𝑑𝜔𝑡 = න (1 − cos 2𝜔𝑡)𝑑𝜔𝑡
2𝜋 𝛼 2 2 𝜋 𝛼

2𝜋
𝑉𝑚 1 𝜋 1 𝑉𝑚 1 1
= 𝜔𝑡ቚ − sin 𝛿 ቤ = 𝜋 − 𝛼 − 0 − sin 2𝛼
2 𝜋 𝛼 2 2𝛼
2 𝜋 2

𝑉𝑚 2 𝜋 − 𝛼 + sin 2𝛼
=
2 2𝜋

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Parameter evaluation (III)
3. Rectification efficiency
𝑃0 𝑉02
𝜂= = 2
𝑃𝑅𝑀𝑆 𝑉𝑅𝑀𝑆
4. Transformer utilisation factor
𝑃0 𝑉0 𝐼0 𝑉02
𝑓𝑇 = = =
𝑃𝑆 𝑉𝑆 𝐼𝑆 𝑉𝑆 𝑉𝑅𝑀𝑆
5. Form factor and ripple factor
𝑉𝑅𝑀𝑆
𝑓𝐹 = 𝑓𝑅 = 𝑓𝐹2 − 1
𝑉0

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 2.2 Basic thyristor circuits II (RL loading)
2. Inductive load (RL)
[𝟎, 𝜶]: 𝑖𝑜 is zero, 𝑣𝑜 is zero;

[𝜶, 𝜷]: 𝑣𝑜 = 𝑣𝑠 = 𝑉𝑚 sin 𝜔𝑡

Inductance L forces the load current 𝑖𝑜 to rise gradually,
after sometime, it reaches maximum value and then
begins to decrease. At 𝜔𝑡 = 𝜋, 𝑣𝑜 = 0, but 𝑖𝑜 ≠ 0 due to
inductance. After 𝜔𝑡 = 𝜋, SCR is subjected to reverse
anode voltage, but it will not be turned OFF.

[𝜷, 𝟐𝝅]: At angle 𝛽 → 𝑖𝑜 is zero, turns OFF.

• Firing angle: α
• Termination/extinction angle: 𝛽
Conduction angle: 𝛾 = 𝛽 − 𝛼

Notice that 𝛽 > 𝜋. 21

Key Parameters
• Average output voltage
1 𝛽 𝑉𝑚
𝑉0 = න 𝑉𝑚 sin 𝜔𝑡 𝑑𝜔𝑡 = cos 𝛼 − cos 𝛽
2𝜋 𝛼 2𝜋
𝑉𝑚
– Range: 0 ≤ 𝑉0 ≤
𝜋

• RMS output voltage

1 𝛽 2 2
𝑉𝑚 2 𝛽 − 𝛼 + sin 2𝛼 − sin 2𝛽
𝑉𝑅𝑀𝑆 = න 𝑉𝑚 sin 𝜔𝑡 𝑑𝜔𝑡 =
2𝜋 𝛼 2 2𝜋
𝑉𝑚
– Range: 0 ≤ 𝑉𝑅𝑀𝑆 ≤
2

22
 2.2 Basic thyristor circuits II (RL loading)
• The voltage equation when SCR is conducting:
𝑑𝑖𝑜
𝐿 + 𝑅𝑖𝑜 = 𝑉𝑚 sin 𝜔𝑡
𝑑𝑡
with the initial state conditions 𝜔𝑡 = 𝛼 and 𝑖𝑜 = 0, get:
𝑉𝑚 𝑉𝑚 −
𝑅
𝜔𝑡−𝛼
𝑖𝑜 = 𝑖𝑠𝑡𝑒𝑎𝑑𝑦 (𝑡) + 𝑖𝑡𝑟𝑎𝑛𝑠𝑖𝑒𝑛𝑡 (𝑡) = sin 𝜔𝑡 − 𝜑 − sin 𝛼 − 𝜑 𝑒 𝜔𝐿
𝑍 𝑍
where 𝑍 = 𝑅2 + (𝜔𝐿)2 and 𝜑 = arctan(𝜔𝐿/𝑅)

• Substitute 𝜔𝑡 = 𝛽 and 𝑖𝑜 = 0 in the equation, get:

𝛽−𝛼
−
sin(𝛼 − 𝜑)𝑒 tan 𝜑 = sin(𝛽 − 𝜑)
with the knowledge of angle α and φ, the termination angle β
can be calculated.
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 2.2 RL load with freewheeling diode
• Load current io (earlier) can be improved by
connecting freewheeling diode across load.
1) At 𝜔𝑡 = 𝛼, 𝑣𝑠 appears across load as 𝑣𝑜 .
2) At 𝜔𝑡 = 𝜋, 𝑣𝑠 = 0. After 𝜔𝑡 = 𝜋, diode FD is forward-
biased through conducting SCR. As a result, 𝑖𝑜 is
immediately transferred from SCR to FD as 𝑣𝑠 tends to
reverse. At the same time, SCR is turned OFF due to
reverse voltage.
3) It is assumed that the inductor L is quite large, energy
stored in L is enough to support the conduction in the
freewheeling path until next period starts, i.e,. 2𝜋 + 𝛼.

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 Summary – Half-wave Circuit
• Triggering delay angle α of SCR could vary from 0 to π;
• V0 and VRMS are smaller than the corresponding circuits using
diode;
• The circuit is simple, but form factor and ripple factor are
quite large;
• These circuits are hardly used in practice;
• For SCR: Maximum forward voltage and maximum reverse
voltage are two parameters for device selection;
• Disadvantage:
– Only single pulse in one line cycle

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 3.1 Full-bridge rectifier (R)
• Resistive load (R)
– 𝑇1 and 𝑇2 is a pair of bridge arm: In the
positive half of vs, they start to conduct
𝑇1
VT1 𝑇3
VT3
when triggered by a pulse, and will be
closed when vs passes 0 to negative.
-
+ +
• → Blue current path vs RL vo
-+ -
– 𝑇3 and 𝑇4 is another pair of bridge arm: In 𝑇4
VT4 𝑇2
VT2

the negative half of vs, they start to conduct

when triggered by a pulse, and will be
closed when vs passes 0 to positive.
• → Red current path

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 3.1 Full-bridge
rectifier (R)

𝑇1 𝑇3

𝑇4 𝑇2

𝑉𝑜 is still positive, why?

27
Parameter evaluation (I)
• Average output (rectified) voltage
1 𝜋 𝑉𝑚
𝑉0 = න 𝑉𝑚 sin 𝜔𝑡 𝑑𝜔𝑡 = cos 𝛼 + 1
𝜋 𝛼 𝜋

• RMS output voltage

1 𝜋 2 2
𝑉𝑚 2 𝜋 − 𝛼 + sin 2𝛼
𝑉𝑅𝑀𝑆 = න 𝑉𝑚 sin 𝜔𝑡 𝑑𝜔𝑡 =
𝜋 𝛼 2 𝜋

• Rectification efficiency
𝑉02 4 cos 𝛼 + 1 2
𝜂= 2 =
𝑉𝑅𝑀𝑆 𝜋(2 𝜋 − 𝛼 + sin 2𝛼)

28
Parameter evaluation (II)
• Average output current
𝑉0 𝑉𝑚
𝐼0 = = cos 𝛼 + 1
𝑅 𝜋𝑅
• RMS output current
𝑉𝑅𝑀𝑆 𝑉𝑚 2 𝜋 − 𝛼 + sin 2𝛼
𝐼𝑅𝑀𝑆 = =
𝑅 2𝑅 𝜋

Calculate!
• Average current of each SCR

• Effective current of each SCR

29
 3.2 Full-bridge
rectifier (RL)

• Inductive load (L is
very large)

𝑇1
VT1 𝑇3
VT3
+
RL

vs vo

𝑇4 𝑇2
L
VT4 VT2
-

30
 3.4 Full-bridge Continuous Load Current
rectifier (RLE)
With inductive load, the
thyristor can still conduct
when 𝑉𝑠 < 𝐸 (even when 𝑉𝑠
is negative);
– If L is large enough, then the
current is continuous;
– Otherwise, it is discontinuous.

𝑇1
VT1 𝑇3
VT3 +
RL

vs Ed vo

𝑇4
VT4 𝑇2
VT2
L
-

31
 3.4 Full-bridge Discontinuous Load Current
rectifier (RLE)
With inductive load, the
thyristor can still conduct
when 𝑉𝑠 < 𝐸 (even when 𝑉𝑠
is negative);
– If L is large enough, then the
current is continuous;
– Otherwise, it is discontinuous.

𝑇1
VT1 𝑇3
VT3 +
RL

vs Ed vo

𝑇4
VT4 𝑇2
VT2
L
-

32
 Summary of some important points
• When analysing a thyristor circuit, start from a diode circuit with the
same topology. The behaviour of the diode circuit is exactly the same
as the thyristor circuit when firing angle is 0.
• A power electronic circuit can be considered as different simple
circuits when the power semiconductor devices are in different states.
• Take different principles when dealing with different kinds of load.
– For resistive load: current waveform of a resistor is the same as the
voltage waveform.
– For inductive load with a large inductor: the inductor current can be
considered constant.

33
Exercise
• A single-phase half-wave controlled rectifier with R load is
supplied from a 230 V, 50 Hz AC source. When average dc
output voltage is 50% of maximum possible average dc
output voltage, determine
1) Firing angle of SCR.
2) Average dc output voltage.
3) RMS output voltage.
4) Average and RMS output currents.
5) Average and RMS currents of SCR.
[Assume 𝑅 = 20 𝛀]

34
Summary

• Narrow sense: Thyristor = SCR (Silicon Controlled Rectifier)

• Acts as controlled diode:
– Stay off until a gate pulse 𝑖𝐺 is applied while 𝑣𝐴𝐾 > 0;
– Once on, behaves like a diode and does not turn off until 𝑖𝐴 → 0.
• Ideally:
– Instantaneous switching from one state to the other.
– Zero voltage drop in on-state.
– Infinite voltage and current handling capabilities.

35
See you in the next class (March 26th)

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