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Ch06 - 3주차 4주차 6주차 7주차 과제

전자회로 (Soongsil University)

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Chapter 6

2 What should be the value of oxide capacitance required to store a charge of 25 fC in an NMOS
device, if W = 5 m, VGS – VTH = 2 V? Assume VDS = 0 V.

Solution

Q  WCox VGS  VTH  L

25 fC  5  106  Cox  2  0.2  106
Cox  12.5 fF/ m 2

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5 A MOSFET carries a drain current of 2 mA with VDS = 0.4 V in saturation. Determine the change in
VDS required to double the drain current and  = 0.1 V–1. What is the device output impedance?

Solution

1 W
n Cox VGS  VTH  1  λVDS 1 
2
I D1 
2 L
1 W
 n Cox VGS  VTH  1  λVDS 2 
2
I D2
2 L
I D1 1  λVDS 1

ID2 1  λVDS 2
2 mA 1  0.1  0.4

4 mA 1  0.1VDS 2
VDS 2  10.8V.
VDS
Output impedance 
I D
10.8  0.4
  5.2 k.
4 mA  2 mA

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6 A NMOS device operating in the saturation region with W/L = 10 carries a current of 5 mA.
Calculate the transconductance of the device.

Solution

W
g m  2 n Cox ID
L
 2  200  106  10  5  103  4472 S.

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8 A NMOS transistor is designed to be used as a resistor of resistance 500  in certain application,

with W/L = 12. Find the overdrive voltage needed.

Solution

1
Ron 
W
n Cox VGS  VTH 
L

1
Overdrive voltage, VGS  VTH  
W
n Cox Ron
L
1
 6
 0.83 V.
200  10  12  500

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10 Calculate the value of drain current in the circuit shown in Fig. 6.37, with W = 5 m, L = 0.5 m
and  = 0.

Solution

1 W
n Cox VGS  VTH 
2
ID 
2 L
VGS  VDD  I D RD
 3  I D 20k
1 5  106
ID   200  106    3  I D 20k  0.4 
2
6
2 0.5  10
 I D 20k   105 I D  2.62  0.
2

On solving for ID, we get

I D  113.17  A
2I D
Overdrive voltage Vov   0.336 V
W
n Cox
L
VGS  VTH  Vov
 0.736 V.

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11 In the circuit shown in Fig. 6.37, what value of R is required to get a current of 75 A with W = 5
m, L = 0.5 m and  = 0 ?

Solution

2I D
Vov 
W
n Cox
L
2  75  106
  0.2738 V
6 5  106
200  10 
0.5  106
VGS  VD
 VTH  Vov
 0.4  0.2738  0.6738 V.

Therefore,

VDD  VD
R
ID
3  0.6738
  31.01 k.
75  106

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18 In Fig 6.42, what is the current when VGS = 2 VTH? Find the region in which the device operates.

Solution

Assume that the device is in the saturation region. Then,

1 W
n Cox VGS  VTH 
2
ID 
2 L
1 10
  200  106   2VTH  VTH 
2

2 0.14
1 10
  200  106  VTH 
2

2 0.14
1 10
  200  106   0.4 
2

2 0.14
 1.142 mA
VDS  VDD  I D RD
 1.8  500  1.142  103
 1.23 V.

Since VDS  VGS  VTH , the device operates in the saturation region.

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19 In Fig 6.43, compute the value of W/L required to operate the transistor M1 in saturation region.

Solution

For M1 to operate in the saturation region,

VDS  VGS  VTH

 VDD  VTH
 1.8  0.4  1.4 V
VDD  VDS
IRD 
RD
1.8  1.4
  0.8 mA
500
1 W
I D  n Cox VGS  VTH 
2

2 L
1 W
0.8  10   200  106   1.8  0.4 
3 2

2 L
W
 4.08
L
If W  10  m, then L  2.45  m.

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20 Compute the value of W/L for M1 in Fig 6.44 for a bias current of 0.5 mA. Assume  = 0.

Solution

Since VGS = VDS, the device always operated in the saturation region.

VGS  VDD  I D RD
1 W
ID  n Cox VGS  VTH 
2

2 L
1 W
 n Cox VDD  I D RD  VTH 
2

2 L
W 2I D

L n Cox VDD  I D RD  VTH 2
2  0.5  103

200  106  1.8  0.5  103  600  0.4 
W
 4.13.
L

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21 Calculate the bias current of M1 in Fig 6.45 if  = 0.

Solution

VGS = VDS , the device always operates in the saturation region.

VGS = VDD  I D RD
1 W
n Cox VGS  VTH 
2
ID 
2 L
1 W
 n Cox VDD  I D RD  VTH 
2

2 L
1 10
  200  106  1.8  I D 500  0.4 
2

2 0.18
 I D 500   1580 I D  1.42  0
2

I D  1.696 mA.

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23 Calculate the value of W/L required to get a drain current of 1 mA in the circuit shown in Fig 6.47.
Assume  = 0.

Solution

VGS  VDD  I D RD
1 W
ID  n Cox VGS  VTH  1  VDS 
2

2 L
1 W
1  103   200  106  VDD  I D RD  VTH  1  0.1VDD  I D RD  
2

2 L
  200  106  1.8  1  103  500  0.4  1  0.11.8  1  103  500  
1 W 2

2 L
W
 11.98.
L

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24 In the circuit of Fig. 6.48, W/L = 10/0.18 and  = 0. What is the value of current flowing through M1,
assuming that the device operating at the edge of saturation?

Solution

1 W
ID  n Cox VGS  VTH  1  VDS 
2

2 L
VDS  VB  VTH
 0.7  0.4  0.3V
1 10
I D   200  106   0.7  0.4  1  0.1  0.3
2

2 0.18
 0.515 mA.

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25 An NMOS device operating in the deep triode region with  = 0 must provide a resistance of 20
k. Determine the required value of W/L if VGS= 0.5 V.

Solution

1
Ron 
W
n Cox VGS  VTH 
L
W 1

L n Cox Ron VGS  VTH 
1
  2.5.
200  10  20  103   0.5  0.4 
6

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26 Determine the transconductance of a MOSFET operating in saturation, if W/L = 10/0.18 and ID =

3 mA. If W/L ratio is doubled, compute the new value of transconductance keeping ID constant.

Solution

W
g m  2 n Cox ID
L
10
 2  200  106   3  103
0.18
 8.164  103 S

W
If gets doubled, then new value of transconductance,
L

g m new   2 g m  11.5  103 S .

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28 Assuming a constant VDS, a graph of gmrO verses (VGS – VTH) of an NMOS gives a slope of 50 V–1 .
Find the W/L ratio if  = 0.1 V–1 and ID = 0.5 mA.

Solution

W 1
g m  n Cox VGS  VTH  and rO  .
L ID
W
n Cox
g m rO  L V  V  .
 ID GS TH

W
n Cox
A graph of g m rO verses VGS  VTH  will be straight line with slope  L.
 ID
Therefore,

W
n Cox
50  L
 ID
W 50   I D

L n Cox
50  0.1  0.5  103
  12.5.
200  106

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29 A NMOS device has a current of 0.5 mA with W/L = 5 and  = 0.1 V–1. Calculate the intrinsic gain
gmrO.

Solution

W
g m  n Cox ID
L
 200  106  5  0.5  103  1  103 S
1
and rO 
 ID
1
  20 k
0.1  1  103
g m rO  1  103  20 k  20.

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33 If  = 0, what value of W/L places the transistor M1 at the edge of saturation in Fig 6.53?

Solution

At the edge of saturation,

VD = VG + VTH
 1  0.4  1.4 V.

 p Cox VSG  VTH 

1 W 2
ID 
2 L
I D  IR1
VD

R1
1.4
  1.4 mA
1k
W 2
 1.4  103 
100  10   0.8  0.4 
6 2
L
 175.

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37 For the circuit shown in Fig 6.57, draw the ac equivalent circuit assuming M1 and M2 operates in
saturation and each has channel length modulation coefficients n and p, respectively. Determine
the small signal voltage gain of the circuit.

Solution

From the equivalent circuit, Vout = – (gmn + gmp) (rOn||rOp).

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