SUM75N04-05L

New Product Vishay Siliconix

N-Channel 40-V (D-S), 175_C MOSFET, Logic Level

PRODUCT SUMMARY FEATURES

D TrenchFETr Power MOSFET
V(BR)DSS (V) rDS(on) (W) ID (A) Qg (Typ)
D 175_C Maximum Junction Temperature
0.005 @ VGS = 10 V 75a D 100% Rg Tested
40 130
0.006 @ VGS = 4.5 V 75a

D
TO-263

G D S
Top View S
Ordering Information: SUM75N04-05L —E3
N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Gate-Source Voltage VGS "20 V

Continuous Drain Current TC = 25_C 75a

ID
(TJ = 175_C) TC = 125_C 55
A
Pulsed Drain Current IDM 240
Single Pulse Avalanche Current IAS 75
Single Pulse Avalanche Energy L = 0.1 mH EAS 280 mJ
TC = 25_C 250b
Power Dissipation PD W
TA = 25_C c 3.7
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mountc RthJA 40
_C/W
Junction-to-Case RthJC 0.4

Notes
a. Package limited.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).

Document Number: 73247 www.vishay.com

S-50141—Rev. A, 24-Jan-05 1
SUM75N04-05L

Vishay Siliconix New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 40 V, VGS = 0 V 1

Zero Gate Voltage

g Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 125_C 50 mA
m
VDS = 40 V, VGS = 0 V, TJ = 175_C 250
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 75 A 0.004 0.005
VGS = 4.5 V, ID = 75 A 0.005 0.006
On State Resistancea
Drain Source On-State
Drain-Source rDS(on)
DS( ) W
VGS = 10 V, ID = 30 A, TJ = 125_C 0.0083
VGS = 10 V, ID = 30 A, TJ = 175_C 0.010
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S

Dynamicb
Input Capacitance Ciss 6400
Output Capacitance Coss VGS = 0 V, VDS = 20 V, f = 1 MHz 1700 pF
Reverse Transfer Capacitance Crss 700
Total Gate Chargec Qg 130 200
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V,, ID = 75 A 20 nC
Gate-Drain Chargec Qgd 30
Gate Resistance Rg f = 1.0 MHz 1.4 2.8 4.2 W
Turn-On Delay Timec td(on) 15 30
Rise Timec tr 60 120
VDD = 30 V, RL = 0.47 W
ns
Turn-Off Delay Timec td(off) ID ^ 75 A, VGEN = 10 V, Rg = 2.5 W 130 260
Fall Timec tf 70 140

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b

Continuous Current IS 75
A
Pulsed Current ISM 240
Forward Voltagea VSD IF = 75 A , VGS = 0 V 1.0 1.3 V
Reverse Recovery Time trr 65 120 ns
Peak Reverse Recovery Current IRM(REC) IF = 75 A,, di/dt = 100 A/ms
m 4 8 A
Reverse Recovery Charge Qrr 130 260 nC

Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 73247

2 S-50141—Rev. A, 24-Jan-05
 SUM75N04-05L
New Product Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

250 250
VGS = 10 through 5 V

200 200
I D − Drain Current (A)

I D − Drain Current (A)

4V

150 150

100 100

TC = 125_C
50 3V 50
25_C

2V −55_C
0 0
0 2 4 6 8 10 0 1 2 3 4 5

VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

200 0.008

TC = −55_C
r DS(on) − On-Resistance ( W )
g fs − Transconductance (S)

160
0.006 VGS = 4.5 V
25_C

120 VGS = 10 V
125_C
0.004

80

0.002
40

0 0.000
0 20 40 60 80 100 0 20 40 60 80 100 120

ID − Drain Current (A) ID − Drain Current (A)

Capacitance Gate Charge

7000 20
VGS − Gate-to-Source Voltage (V)

6000 VDS = 20 V
16 ID = 75 A
C − Capacitance (pF)

Ciss
5000

12
4000

3000
8

2000

Coss 4
1000 Crss

0 0
0 10 20 30 40 50 60 0 50 100 150 200 250

VDS − Drain-to-Source Voltage (V) Qg − Total Gate Charge (nC)

Document Number: 73247 www.vishay.com

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Vishay Siliconix New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 30 A
2.0

I S − Source Current (A)

rDS(on) − On-Resiistance

TJ = 150_C
(Normalized)

1.5
TJ = 25_C
10
1.0

0.5

0.0 1
−50 −25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5
TJ − Junction Temperature (_C) VSD − Source-to-Drain Voltage (V)

THERMAL RATINGS
Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area
100 500

10 ms
80 *Limited
100 by rDS(on)
I D − Drain Current (A)

I D − Drain Current (A)

100 ms

60

1 ms
40
10

10 ms
20 TC = 25_C
Single Pulse 100 ms
dc

0 1
0 25 50 75 100 125 150 175 0.1 1 10 100
TA − Ambient Temperature (_C) VDS − Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified

Normalized Thermal Transient Impedance, Junction-to-Case

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1 0.05

0.02

Single Pulse

0.01
10−5 10−4 10−3 10−2 10−1 1 3
Square Wave Pulse Duration (sec)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?73247.

www.vishay.com Document Number: 73247

4 S-50141—Rev. A, 24-Jan-05
 Legal Disclaimer Notice
Vishay

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All product specifications and data are subject to change without notice.

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therein, which apply to these products.

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1