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Interview Question
Interview Question
A. It is not possible to fix both at a time because if we increase the delay in data path it's good
for hold and bad for setup.But there is only one way to fix it.
● Slow the clock frequency for setup fix (this is not a valid fix,but we don't have other
option).
b) Shielding.
e) Layer jumping.
f) Victim net width increasing then resistance decreases.
g) Guard ring.
Q 4.What is cross-talk?
A. It is the undesirable electric interaction between two or more physical adjust nets due to the
capacitance cross coupling.When two nets are in parallel the electric field of one net is effects
A. It is the process of re connecting the scan chains in the design to optimize for routing by
reordering the scan chain connection which improves timing and congestion.
A. The std-cells in the design are placed in rows.All rows have equal height and spacing.The
width of the row can vary.The std-cell in the row get the power and ground connection from vdd
and vss rails.Sometimes technology allows the rows to be flip.So they can share the power and
A. At higher CMOS technologies cell delay increases when temperature increases.But when
you are in lower technologies i.e below 65nm cell delay has inversely proportional to
temperature.
Q 9.In reg to reg path if you have setup problem where will you insert buffer?
A. We can insert buffer near to launch flop which decreases the transition time.Hence
decreasing the wire delay therefore overall delay will decrease.When arrival time will decrease
Q 10.What is partitioning?
A. It is the process of dividing the chip into small blocks this is done mainly to separate different
where inserted in post route and then modify the routing to fix any DRC's.
A. At the time of etching they use some type of chemicals due to that chemical metal loss will be
A. It is the Technic for avoiding the problems like metal lift off and metal erosion.
A. Dynamic power consumption:- Occurs when signals which go through the CMOS circuit
static (leakage power consumption):- It is the power consumed by the sub threshold currents
short circuit power consumption:- It occurs during switching on both the NMOS and PMOS
transistors in the circuit and they conduct simultaneously for a short amount of time.
A. It is defined as the difference between the height of the oxide in the spaces and that of the
metal in the trenches.It is caused by CMP.It may reduced by some dummy fill Technics
effectively.
A. a) Shorts.
b) Opens.
A.It is the delay between the clock source and clock pin.It is two types.Clock source latency and
clock network latency.The time taken from clock source to definition pin is the clock source
latency and from the clock definition pin to clock pin of the flip flop 2 is the clock network latency.
A. Setup:-
● Insert repeaters.
Hold:-
A.
● .v
● .sdc
● tlu+ file
● Pin/pad position.
A.
● Die/block area.
● Macro placed.
A. It is the region around the boundary of fixed macros in design in which no other macros or
standard cells not allows.It allows only buffers and inverters in it's area.
c) Multiple clocks with domine crossing synthesis each clock separately and balance the
skew.
Q 27.What is IR drop?
A. Each metal layer has a resistance value.When the current flows through the metal the
resistance consumes some current.This is the IR drop.If the resistance is more the drop also
more.
Q 28.how to reduce power dissipation using HVT and LVT in the design?
A.If we have positive slack use HVT cells in the path and use LVT cells in the path when we
have negative slack.HVT cells have large delay and less leakage power. LVT cells have less
delay and more leakage power.To meet the timing use LVT cells and to reduce the leakage
Resistance.
Capacitance.
A. It is the ability of an electric signal to carry information reliably and to resist the effects
A.Yes it is because cross-talk adds or subtracts energy to the signal which cause setup or hold
violations.
Q 32.How a positive or negative edge triggered flip flop will effect the setup and hold violations?
A. Positive edge triggered flip flop will favour to setup (setup violations will reduce).Negative
edge triggered flip flop will favour to hold (hold violations will reduce).
A. i/p's:-
o/p:-
A. I/P's:-
● Netlist.
● Design constraints.
O/P 's:-
A. Fan-out lead to increased capacitive load on the driving gate.Therefore longer propagation
delay.
during a net with multiple signals are not considered as a good practice.This could lead to
failure in a post silicon verification as the driver strength can potentially get heavily altered
during manufacturing defects.Many EDA tools don't allow multi driven nets in the design and the
designers are expected to remove all multi driven nets from the design.
A. To improve the timing for the design or to improve the congestion for a complex floor plan we
can use magnetic placement to specify fixed objects as magnets and icc moves their connected
standard cells close to them.For the best results perform the magnetic placement before
A.The table is drawn by using input transition and output load values.It is used to calculate the
cell delay.
● Clock gating.
● Multiple vt libraries.
A. a) Timing (setup,hold,transition).
b) Design constraints.
c) Nets.
d) Noise.
e) Clock skew.
b) Allowable IR drop.
A. At floor plan stage it acts like guidelines for placement of standard cells.In CTS stage in order
to balance the skew more no.of buffers and inverters are added and blockages are used to
problems are difficult to fix at routing.These are special rules like double spacing and double
width.
Q 45.What is mesh?
A. The horizontal and vertical power straps in the design are called mesh.
A. The i/o cells are the one which interact in between the blocks outside of the chip to internal
blocks of the chip.In floor plan stage i/o cells are placed in between core and die.These are
A.These are the cells which are made of group of std-cells based on functionality
requirement.This cells height is grater than the std-cells and lesser than the macros.
d) Spread cells.
Q 49.What is etching?
A.It is used in micro-fabrication to chemically remove layers from the surface of the wafer during
manufacturing.
A.It refers to use of layered silicon insulator.It reduces leakage current and lower power
consumption.