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Devices Ii Prefinal Report
Devices Ii Prefinal Report
Transport
PROJECT 9
Presented By:
Supervised By:
DR.Khaled Shehata
ENG.Ayat
ACKNOWLEDGMENT
TABLE OF CONTENTS
Output Characteristics:
• The MOSFET's output characteristics, such as drain current (ID) versus
drain-source voltage (VDs), are crucial for understanding its behavior in
different operating regions.
DESIGN EQUATIONS
SIMULATION RESULT
CONCLUSION
Software:
Simulations provide accurate predictions based on theoretical
models.
Accuracy is dependent on the fidelity of the models and
assumptions made in simulation tools.
The threshold voltage is stored in the Multisim is way different
than the one we use in hardware where it’s a constant value for all
mosfets
• Hardware:
performance may closely match the hardware prototype.
Its Affected by non-idealities, tolerances, and
manufacturing variations.
The threshold voltage variable based on each mosfet but its all
should be with in a range
REFERENCES
https://www.plutochip.com/metal-oxide-semiconductor-
field-effect-transistor-mosfet/?gclid=Cj0KCQiAhc-
sBhCEARIsAOVwHuQePDP6sETnCz_KX9fz8Vl54hmAk
JyGcXekj8CNXNMgkrMl_O2-5gEaApi5EALw_wcB
https://www.electronics-tutorial.net/Analog-CMOS-
Design/MOSFET-Amplifiers/CS-Amplifier-with-Current-
Source-Load/
https://eng.libretexts.org/Bookshelves/
Electrical_Engineering/Electronics/Book
%3A_Semiconductor_Devices_-
_Theory_and_Application_(Fiore)/
13%3A_MOSFET_Small_Signal_Amplifiers/
13.2%3A_MOSFET_Common_Source_Amplifiers