Grisel García Guillén1, Linda Viviana García Quiñonez2 y Jorge Oswaldo González Garza3
Universidad Politécnica de García
1,3
Calle 16 de septiembre S/N, Colonia Valle
de San José, García, Nuevo León.
2
Centro de Investigación Cientí ca y de
Educación Superior de Ensenada, B.C.
Alianza Centro 504, Km 10 Autopista
Aeropuerto, Parque de Investigación e
Innovación Tecnológica, Apodaca, Nuevo León.
grisel@upgarcia.edu.mx
linda@cicese.mx
jorge.gonzalez@upgarcia.edu.mx
Recibido: Agosto 26, 2020.
Recibido en forma revisada: Septiembre 18, 2020.
Aceptado: Septiembre 22, 2020.
50 Revista Científica
H XPHQ ( H HQ H DEDMR H X LD H HIHF R H D DE DFLyQ R
i H X D R RE H XQD R XFLyQ TXtPLFD H F R X R H DQ LPRQLR
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6E 6 . La investigación se llevó a cabo utilizaron un láser tipo
1G * FRQ D RQJL X H RQ D H QP D I HFXHQFLD H i H
D X DFLyQ H X R IXH RQ H + QV, respectivamente. Se
jaron dos densidades de energía (3.61 x 107 y 1.3 x 10 : FP
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composición química, morfología, propiedades ópticas y eléctricas fue
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HF R FR tD H IR RH HF RQH HPL L R R 5D R ( HF R FR tD
Raman, Microscopía de Fuerza Atómica, Espectroscopía de absorción
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LD D FRQ i H PR D RQ XQD L PLQXFLyQ H D XJR L D D t FRPR
XQD PD R FRQ XF L L D
Palabras clave: Ablación, láser pulsado, baño químico, sulfuro de an-
timonio, material semiconductor.
E WUDFW ,Q L ZR N ZH X H HIIHF RI LQ L X X H D H
DE D LRQ RQ H IR PD LRQ RI 6E 6 thin lms deposited on glass subs
D H I RP HFX R R X LRQ RI DQ LPRQ F R L H DFH RQH DQ R
 LXP LR X ID H 7 H LQ H LJD LRQ ZD FRQ XF H X LQJ D QP ZD the sun´s spectra, high absorption coef cient, single stable phase [3].
H HQJ I RP D QDQR HFRQ 1G * DH + QV D LIIH HQ 6E 6 thin lms were deposited by chemical bath deposition assisted
RZH HQ L LH DQ : FP DQ H L D LD LRQ by pulsed laser ablation and the as-prepared thin lms were crystalline
LPH ZD DQ PLQX H 7 H XF X H F HPLFD FRP R L LRQ PR DI H DQQHD LQJ D IR RX LQF HD LQJ HL FRQ XF L L D H
R RJ R LFD DQ H HF LFD R H LH RI H 6E 6 thin lms pre laser power density and irradiation time was increased [4]. Other semi
pared by in-situ pulsed laser ablation chemical bath were analyzed by conductors were synthesized by % technique, zinc selenide =Q6H
-Ray diffraction (XRD), Raman Spectroscopy, 5D 3 R RH HF RQ thin lms were prepared by photo-assisted % technique, the thin l
Spectroscopy (XPS), Atomic force microscopy (AFM), 89 YLV HF P RZH D H LI DQ ER HQH J EDQ JD DQ DQ PL DQFH ZH H
R FR DQ 3 R RFRQ XF L L 7 H H X ZH H FRP D H ZL 6E 6 observed to decrease with an increase in deposition time [5]. Pulsed
thin lms obtained by normal chemical bath deposition showing that laser deposition of cadmium sul de G6 thin lms was investigated,
,Q L X X H D H DE D LRQ F HPLFD ED H R L LRQ HQDE H H R the optical band gap of the as-deposited CdS thin lms was a blue-shift
XF LRQ RI F D LQH 6E 6 thin lms with lower roughness and major to higher energies [6]. The present work studies the effect of % X LQJ
FRQ XF L L ,Q L X 3/ % RQ H XF X D R LFD DQ H HF LFD R H LH RI
H 6E 6 thin lms.
Keywords: Ablation, pulsed laser, chemical bath, antimony sul de,
semiconductor material.
0DW HULDO DQG PHW RG
3/ Pulsed Laser Ablation
% Chemical Bath Deposition 7 H PD H LD X H ZH H QP J D XE D H )L H
3/ % Pulsed Laser Ablation Chemical Bath Deposition Scienti c), chromic acid solution, 6E O DFH RQH 1D 62 + 2 HLR
6E O Antimony Chloride nized water, 100 ml beaker, petri dish, glass mixer and additional labo
1D 62 Sodium iosulfate D R PD H LD 6E 6 thin lms were deposited by % DQ ,Q L X
5 X-Ray Di raction 3/ %
36 X-ray Photoelectron Spectroscopy
)0 Atomic Force Microscopy )R L LQ H LJD LRQ H J D XE D H ZH H F HDQH X LQJ F R
89 Ultraviolet PLF DFL R X LRQ 7 H XE D H ZH H L H LQ H DFL DQ HQ ZH H
9LV Visible F HDQH ZL L L H ZD H DQ LH ZL R DL )R H % L ZD
1,5 Near Infrared necessary a solution of 100 ml containing 650 mg of SbCl3 dissolved
5 Re ectance LQ P RI DFH RQH P RI 1D 62 (1 M) and 72.5 ml of deionized
7 Transmittance ZD H H LRX HD H D HQ H F HDQH XE D H ZH H D
):+0 Full Width at Half Maximum ced horizontally and the solution were added. The solution was kept at
506 Root Mean Square LQ D ED HP H D X H FRQ R H I H H R X LRQ ZD L D LD H
ZL H QP RX X I RP D 1G * (Solar Systems, 10 QV +
H D H EHDP ZD IRFX H X LQJ D FRQFD H HQ LQ R H R H DQ H
,QWURGXFWLRQ D H EHDP IR RQJH R X LRQ X IDFH LQ H DF LRQ 7 H HQ ZD RFD H
D LIIH HQ D HQJ I RP H R X LRQ X IDFH FP DQ FP
3/ LQ LTXL D EHHQ LQ HQ H X XH LQ HFHQ HFD H EH H IRFD D HQJ ZD LQF HD H H H LPD H D H RZH HQ L
FDX H RI L HQR PRX R HQ LD IR HF QR RJLFD D LFD LRQ XF D HF HD H , ZD FD FX D H : FP DQ : FP IR
LJ HP H D X H F HPLFD Q H L DQ D H ED H PD H LD RFH 10 cm and 5 cm, respectively. After irradiation, the deposited thin lms
sing [1]. % is a method to produce thin lms and nanomaterials by ZH H DPR RX R H ZH H XEMHF H R LJ DFXXP HD HD PHQ
H H RJHQHRX HDF LRQ RI F HPLFD HFX R LQ R X LRQ D FRQ DQ D IR RQH RX
HP H D X H HQ HFX R QXF HD H DQ J RZ RQ H J D X IDFH LQ
the form of thin lms. In-situ 3/ % FRPELQH % DQ 3/ LQ All prepared thin lms were analyzed by 5 LQ R H R LQ H LJD H
LTXL 3/ in liquids is a novel technique to synthesize nanomaterials, HL XF X D R H LH L ZD X H DQ (P HDQ 3 1D LFD LII DF
H RX X ZD H HQJ RI D X H D H L X H R L D LD H D R X LRQ LQ RPH H ZL CuKα D LD LRQ RI ZD H HQJ c DQ R H D H D
R H R LQ H DF ZL H F HPLFD HFX R R XFLQJ QXF HD LRQ DQ N9 DQ P 7 H FDQ D H (2θ) ZD I RP R D D FDQ
J RZ RI QDQRPD H LD 7 H PDLQ H H LPHQ D D DPH H D PX speed of 0.0005°/s. The chemical thin lms were also characterized
EH FRQ R H IR 3/ LQ LTXL D H X H X D LRQ I HTXHQF ZD H HQ by Raman spectroscopy (Thermo Scienti c 5 5DPDQ PLF R FR H
J HQH J DQ D H RZH HQ L RI H D H EHDP D R H LFD X LQJ QP H FL D LRQ ZD H HQJ 36 DQD L ZD HFR H X LQJ
and chemical nature of liquid in uence the experiment. % L D RZ Thermo Scienti c K-alpha 36 system employing a monochromatized
cost and functional technique to produce thin lms and coatings at re Al Kα X-ray D LD LRQ RI HQH J H9 )L P LFNQH ZD PH
D L H RZ HP H D X H E LPPH LQJ D XE D H LQ DTXHRX HFX R asured using a stylus pro ler (Alpha Step D-100, KLA-Tencor). The
solution [2]. Both techniques have been considered as environmentally surface morphology of the lms was analyzed by )0 (Model Solver
friendly methods to synthesized semiconductors nanomaterials. The 3 R I RP 17 0 7 LQ HPLFRQ DF PR H 7 H R LFD R H LH 7
need for a sustainable, renewable, and cost-ef cient energy source dri DQ 5 of the thin lms were measured using a spectrophotometer
H R LQ H LJD H HPLFRQ XF R QDQRPD H LD HL R H LH DQ H Shimadzu model UV-1800 in the UV-Vis-NIR region (200 – 1100 nm
R LE H D LFD LRQ IR R D FH 6E 6 L D RPL LQJ FDQ L D H D ZD H HQJ DQJH 7 H H HF LFD PHD X HPHQ ZH H FD LH RX X LQJ
DE R EH PD H LD LQ R D FH EHFDX H RI H PD F LQJ EDQ JD ZL a pico-ammeter/voltage source (Keithley 6487). Photoconductivity

Revista Científica 51
 measurements were made using conductive silver paint (SPI supplies)
applying 100 Bias voltage.

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► 5D LIIUDFWLRQ QDO VLV

X-ray diffraction analysis showed that deposited lms are crystalline

LQ LFD LQJ D X H D H DE D LRQ HIIHF RQ % HQDE H H IR PD
LRQ 6E 6 F D LQH XF X H DI H HL DQQHD LQJ HD HD PHQ D
XQ H DFXXP )LJX H RZ H LII DF LRQ D H Q IR %
DQ ,Q L X 3/ % thin lms deposited for 30 minutes under different
power densities. The diffraction lines marked in this gure correspond
to Stibnite 6E 6 R R RPELF F D LQH XF X H 3 ) 1R
All samples showed the main re ections along (120) and (310) planes,
other peaks are identi ed as (110), (020), (220), (320), (221), (420), )LJXUH 5 SDWWHUV RI W H DV GHSRVLWHG 6E 6 thin lms by normal
(250), (530), (531) and (360) planes, those tted well with the standard % DQG W H RQHV SUHSDUHG E ,Q VLWX 3/ % DW PLQXWHV XVLQJ GLIIH
D D D L LQF X H LQ )LJX H 6E 6 thin lms prepared at UHQW SRZHU GHQVLWLHV DQG DQQHDOHG DW IRU RXU
: FP show lower intensity re ections along (340), (141) and (211)
DQH H D H RZH HQ L LQF HD H R : FP H ► 5DPDQ 6SHFWURVFRS QDO VLV
re ection intensity of the (120), (320) and (360) planes increase, those
planes correspond to the main diffraction peaks of Stibnite 6E 6 L 6E 6 thin lms prepared by % DQ ,Q L X 3/ % ZH H XE
II DF LRQ DQ D jected to Raman Spectroscopy analysis. The Raman spectrum of the
LQ H LJD H 6E 6 lms was measured at room temperature and pre
HQ H LQ )LJX H )LJX H D RZ H 5DPDQ HF XP IR 6E 6 LQ
lms obtained at the irradiation time of 30 minutes at 1.3 x 10 DQ
W/cm RZH HQ L LH 7 H HF XP H LEL E RD EDQ EH ZHHQ
DQ FP H H ZD DQ LQF HD H LQ HDN LQ HQ L LH IR ,Q L X
3/ % thin lms compared with normal % D H D H RZH
HQ L ZD LQF HD H 5DPDQ HF XP IR 6E 6 thin lms prepared at
H L D LD LRQ LPH RI PLQX H D H DPH RZH HQ L LH L RZQ
LQ )LJX H E ,QF HD LQJ L D LD LRQ LPH R PLQX H H H ZD LPL D
HDN LQ HQ L LH EH ZHHQ 6E 6 thin lms prepared by In-situ 3/ %
DQ QR PD % )R D DP H H RE H H HDN ZH H D R L LRQ
RI DQ FP DQ H PR LQ HQ H HDN ZD
D FP

)LJXUH 5 SDWWHUV RI W H DV GHSRVLWHG 6E 6 thin lms by normal

% DQG W H RQHV SUHSDUHG E ,Q VLWX 3/ % DW PLQXWHV XVLQJ GLIIH
UHQW SRZHU GHQVLWLHV DQG DQQHDOHG DW IRU RXU

)LJX H RZ H LII DF LRQ D H Q IR % DQ ,Q L X 3/ %

thin lms deposited for 60 minutes at different laser power density con
ditions; all samples showed similar planes as the thin lms produced at
H L D LD LRQ LPH RI PLQ H L D LD LRQ LPH ZD LQF HD H H
peaks identi ed as (020), (120) and (310) planes showed relative higher
re ection intensity, those peaks were observed for 6E 6 thin lms ob
DLQH E ,Q L X 3/ % DQ QR PD % ,QF HD LQJ H L D LD LRQ
LPH DQ H D H RZH HQ L H H ZH H QR QHZ HDN LQ LFD LQJ
QR IR PD LRQ RI QHZ D H ,QF HD LQJ H D H RZH HQ L H H )LJXUH 5DPDQ VSHFWUXP RI W H DV GHSRVLWHG 6E 6 thin lms by nor
ection peaks of the Stibnite main peaks was enhanced. PDO % DQG W H RQHV SUHSDUHG E ,Q VLWX 3/ % DW PLQXWHV XVLQJ
GLIIHUHQW SRZHU GHQVLWLHV DQG DQQHDOHG DW IRU RXU

52 Revista Científica
 ► UD 3 RWRHOHFWURQ 6SHFWURVFRS QDO VLV

RP R L LRQD DQD L RI 6E 6 was done using XPS. Figure 4a and

gure 4b show the Sb3d and S2p core level spectra recorded for 6E 6 7DEOH 7 LFNQHVV DQG HOHFWULFDO FRQGXFWLYLWLHV XQGHU GDUN RI W H 6E 6
thin lms deposited by In-situ 3/ % D W/cm DQ QR PD thin lms deposited by In-situ PLA CBD at 1.3 x 107 W/cm DQG
% 7 H HF D LQH RI V HDN D H9 D HQ L LRX FD ERQ : FP IRU PLQXWHV DQG PLQXWHV DQG W H DV GHSRVLWHG E QRUPDO %
ZD X H R FD LE D H H HDN ELQ LQJ HQH J LQ D L LRQ R H F D JH DW PLQXWHV DQG PLQXWHV OO VDPSOHV DQQHDOHG DW IRU RXU
compensation by the ood gun equipped within the spectrometer. For
the deconvolution, the peaks were tted using Gaussian- Lorentzian ► WRPLF )RUFH 0LFURVFRS QDO VLV
XP IXQF LRQ DQ FD H ZD DNHQ R PDLQ DLQ H H HF L H LQ HQ L
D LR RI 6S R 6 S D NHH LQJ H DPH ):+0 value. Similar The morphology of selected samples was analyzed by )0 LQ
criteria were considered for Sb3d tting. The 6 S HF XP )LJX H D HLJ PR H X LQJ HPLFRQ DF PR H R D H FRQ D LPDJH D
ZD HFRQ R X H LQ R LQJ H D H 6 S DQ 6 S ZL ELQ LQJ HQH ZH D H 506 D XH R PHD X H H X IDFH RXJ QH D H H HQ
JLH RI DQ H9 H D D H (ΔΕ) E H9 7 H H D XH D H H 0R R RJLFD IHD X H RI 6E 6 thin lms prepared by 30 and 60
H R H IR 6 H HPHQ D D H LQ 6E 6 [1,2]. The binding energies of PLQX H ,Q L X 3/ % D W/cm DQ HD H DH LQ
a DQ H9 (Figure 4b) are identi ed for 6E G DQ 6E G H lms by normal % D PLQX H D H L X D H E P P )0
DDH E H9 H H H X DJ HH ZL H ELQ LQJ HQH JLH H R H PLF RJ D LQ )LJX H PD NH D D F DQ H FR H RQ LQJ R HL
IR 6E LQ 6E 6 [3,4]. 36 results con rmed the elemental compo ght mode in 3D, respectively. Surface roughness of the 6E 6 thin lms
sition and chemical states of thin lms prepared by In-situ 3/ % was estimated by analyzing the height mode 3D images of the sample’s
surface. The surface pro le parameters include the 506 RXJ QH D
H F LEH H R H D RXJ QH RI H X IDFH H D H LPH L D
diation was increased from 30 minutes ( gure 5a) to 60 minutes ( gure
F H X IDFH RXJ QH RI H 6E 6 thin lms prepared at
: FP LQF HD H I RP QP R QP H HF L H 7 H
RXJ QH RI H D H R L H 6E 6 thin lms by 60 minutes of %
ZD QP 7 H D H FRQ D LPDJH RI H H HF L H R RJ D LH
D H H HQ H LQ )LJX H E DQ I ,Q D H LPDJH FDQ EH RE H H
densely packed grains with well-de ned grain boundaries. Well de ned
F X H RI D JH J DLQ ZH H RE H H D H D H LPH L D LD LRQ ZD
LQF HD H I RP PLQX H R PLQX H IR H 6E 6 thin lms prepa
H E ,Q L X 3/ %

)LJXUH +LJ UHVROXWLRQ 36 VSHFWUD RI D 6 S FRUH OHYHO DQG E 6E G

core level for thin lms deposited by In-situ PLA CBD at 3.61 x 10 : FP
XVLQJ QP DW PLQXWHV DQG DQQHDOHG DW IRU RXU

► Thin lm thickness

7 LFNQH RI H 6E 6 thin lms deposited by In-situ 3/ % DQ

QR PD % DQQHD H D IR RX D H RZQ LQ 7DE H
the samples were subjected to thickness measurements, a pro lometer
calibrated using a standard sample of step size 9423 c 7 H LFNQH
RI H 6E 6 thin lms prepared by In-situ 3/ % LQF HD H D H
L D LD LRQ LPH ZD LQF HD H I RP PLQX H R PLQX H X LQJ
W/cm DQ W/cm H HF L H 7 LFNQH RI QP
ZD RE DLQH IR H 6E 6E thin lms prepared by In-situ 3/ % IR
PLQX H DQ W/cm . Under normal % H LFNQH RI
the as-deposited thin lms for 60 minutes was larger than the thin lms )LJXUH )0 LPDJHV IRU 6E 6 thin lms prepared under laser power
H R L H IR PLQX H GHQVLW RI : FP DW D E PLQXWHV DQG F G PLQXWHV
DQG DQQHDOHG DW IRU RXU WRPLF IRUFH PLFURJUDS V IRU 6E 6 W LQ
lms deposited by (a), (b) normal CBD at 60 minutes and annealed at 350
IRU RXU

Revista Científica 53
 ► 2SWLFDO 3URSHUWLHV QDO VLV

)LJX H RZ H R LFD DQ PL DQFH 7 and re ectance 5

HF XP RI 6E 6 thin lms in the wavelength range of 300-1500 QP
Figure 6a and gure 6b present the 5 DQ 7 RI H 6E 6 thin lms
H D H E ,Q L X 3/ % D H L D LD LRQ LPH RI PLQX H X LQJ
different power densities and the as-prepared thin lms by normal %
)LJX H F DQ RZ H 5 DQ 7 RI H 6E 6 thin lms produced by
L D LD LRQ LPH RI PLQX H DQ E QR PD % ,Q H QRQ DE R ELQJ
region, an average of 80 to 90% transmittance and 60% re ectance are
RE H H IR D 6E 6 thin lms. The higher 5 ZD RE H H IR H
D H D H 6E 6 thin lms by normal % at 30 minutes, the thin lms
RE DLQH E ,Q L X 3/ % RZQ LPL D 5 R H H ZD PR H
7 for the as-prepared thin lms by normal % D PLQX H H
% ZH H XEMHF H R ,Q L X 3/ H LJ H 7 DQ 5 HDN LI
R H RZH ZD H HQJ ,Q H DE R ELQJ HJLRQ α FDQ EH FD FX D H
X LQJ H HTXD LRQ Figure 7. Absorption coef cient of the SE 6 thin lms prepared by In-si
WX 3/ % DW DQG PLQXWHV XVLQJ GLIIHUHQW SRZHU GHQVLWLHV
DQG : FP DQG W H DV SUHSDUHG RQHV E QRUPDO % DW DQG
PLQXWHV OO VDPSOHV DQQHDOHG DW IRU RXU

)LJX H L X D H H R RI (αhν) vs hν 7DXF R IR H 6E 6

thin lms giving good linear t for Q 7 L LP LH D H IXQ D
PHQ D R LFD DE R LRQ LQ 6E 6 thin lms was dominated by direct
D RZH DQ L LRQ ) RP H FX H H D XH RI EDQ JD ZD H LPD H
E H D R D LQJ H LQHD HJLRQ RI H H HF L H R R α=0 D RZQ
in the gure 6. The (J D XH ZD D RXQ H9 IR D H DP H

Figure 6. Re ectance (%R, left) and Transmittance (%T, right) spectra

IRU 6E 6 thin lms deposited by In-situ PLA CBD at different laser power
GHQVLWLHV DQG : FP IRU DQG PLQXWHV DOVR W H
GHSRVLWHG RQHV E QRUPDO % OO VDPSOHV ZHUH DQQHDOHG DW IRU
RXU

)LJXUH (YDOXDWLRQ RI RSWLFDO EDQG JDS RI W H 6E 6 thin lms prepared

Figure 7 show absorption coef cient of the 6E 6 thin lms prepared E ,Q VLWX 3/ % DW DQG PLQXWHV XVLQJ GLIIHUHQW SRZHU GHQVLWLHV
E ,Q L X 3/ % DQ HD H D H RQH E QR PD % D DQ DQG : FP DQG W H DV SUHSDUHG RQHV E QRUPDO % DW
PLQX H X LQJ LIIH HQ RZH HQ L LH D LQJ D XH EH ZHHQ DQG PLQXWHV OO VDPSOHV DQQHDOHG DW IRU RXU
FP . The optical band gap value of the thin lm was determined
X LQJ HTXD LRQ

54 Revista Científica
 ► 3 RWRFRQGXFWLYLW QDO VLV Where σ L H FRQ XF L L LQ (Ω-cm) 5 L H PHD X H H L DQFH
LQ Ω R DJH FX HQ Z L H ZL RI H H HF R H , L H L DQ
3 R RFRQ XF L L RI H 6E 6 thin lms prepared by In-situ3/ % ce between two electrodes and t is the thickness of the thin lm. The
D PLQX H DQ PLQX H RI D H L D LD LRQ DQ H D H DH LQ H LPD H FRQ XF L L LH D H RZQ LQ 7DE H DQ D H LQ H R H
lms by normal % ZH H H H PLQH I RP H R RFX HQ H RQ H RI (Ω-cm) DQ (Ω-cm) IR D DP H 7 H FRQ XF L L LQ
PHD X HPHQ D RRP HP H D X H E D LQJ D ELD D RZQ LQ F HD H D H D H RZH HQ L ZD LQF HD H IR H 6E 6 thin lms
)LJX H DQ )LJX H H HF L H ELD RI 9 ZD D LH DF R H R L H E ,Q L X 3/ %
D DL RI DQD L H DLQ H HF R H H FX HQ RXJ H DP H
ZD PHD X H LQ DQ LQ H D RI V each, rst in the dark, followed by
L XPLQD LRQ RI H DP H DQ HQ DI H ZL F LQJ RII H LJ RX FH L FX LRQ
7 H D XH RI D N FRQ XF L L ZD H D XD H X LQJ HTXD LRQ
6E 6 thin lms were deposited by In-situ 3/ % D LIIH HQ D H
RZH HQ L LH DQ L D LD LRQ LPH 7 H D H R L H 6E 6 thin lms
ZH H DQQHD H D IR RX HQ H 6E 6 crystallizes into or
R RPELF XF X H D PDQ RI H H H LPHQ D 5 D H Q RI H
cent studies [7, 8]. The normal % J RZ RFH RI 6E 6 thin lms
I RP F HPLFD R X LRQ HFX R L JL HQ E H L RFLD LRQ RI LR
X ID H LRQ 7 X H 6E DQ 6 LRQ R XFH RXJ H HFRP R
L LRQ RI LQ H PH LD H DQ LPRQ LR X D H FRP H 6E 6 2 DQ
H XE HTXHQ L RFLD LRQ RI 6 2 HDF RQ H J D XE D H R
IR P 6E 6 [9]. When the % L D L H E 3/ H QXF HD LRQ DQ
J RZ PHF DQL P RI 6E 6 is in uenced by the absorption of the ou
X D H ZD H HQJ HD LQJ H IR PD LRQ RI 6E 6 thin lms with
LIIH HQ PR R RJ LFNQH DQ RXJ QH D L RE H H LQ 7DE H
DQ )LJX H 3/ RI F HPLFD R X LRQ ZH H LQ H LJD H DQ ZR
PHF DQL P D H EHHQ R R H H PH LQJ H D R D LRQ PHF DQL P
and the laser-induced Columbic explosion [9,10]. In melting and/or va
porization mechanism, laser induces melting and/or vaporization of the
larger sized particles into atoms, and then the produced atomic species
)LJXUH 3 RWRFRQGXFWLYLW FXUYHV RI W H 6E 6 thin lms deposited by HD DQJH LQ R PD H QDQR XF X H R LQ LIIH HQ PR R RJLH H
,Q VLWX 3/ % IRU PLQXWHV DW GLIIHUHQW ODVHU SRZHU GHQVLW DQG W H pending of the experimental conditions [11,12]. It was reported diffe
RQHV GHSRVLWHG XQGHU QRUPDO % IRU PLQXWHV HQ PR R RJLH RI 6E 6 QDQR D LF H D H HIIHF RI H 3/ RI
powder pellets by 1064 and 532 nm from a pulsed Nd:YAG [13].

7 H F HPLFD FRP R L LRQ RI H 6E 6 thin lms deposited by

,Q L X 3/ % DQ QR PD % ZD H H PLQH E 5DPDQ DQ 36
DQD L , L H R H D E RD EDQ EH ZHHQ DQ FP L
considered the characteristic spectral region of sul de and the bands at
a DQ a FP FR H RQ H R DQ L PPH LF H F LQJ LE D
LRQ νD (Sb-S). The bands at ~251 and ~238 cm FR H RQ H R P
PH LF EHQ LQJ LE D LRQ V
(S-Sb-S), when those at ~190 and ~207
FP ZH H D LEX H R DQ L PPH LF EHQ LQJ LE D LRQ D
(S-Sb-S)
[14]. 36 LQH RI 6E G RXE H D H D ELQ LQJ HQH J D XH LQ H
DQJH RI H H R H IR 6E D H LQ 6E 6 DP H H D H E D LRX
H HD F J RX R H ELQ LQJ HQH J D XH LQ H LJ H R X LRQ
6 S FR H H H HF D D H F D DF H L LF RI 6 D H LQ 6E 6 [15,16].

7 H )0 analysis ( gure 5) of the 6E 6 thin lms deposited by

,Q L X 3/ % RZH LJ H RXJ QH DQ D JH H LFD F X H
J DLQ D H D H L D LD LRQ LPH ZD LQF HD H R PLQX H , L
)LJXUH 3 RWRFRQGXFWLYLW FXUYHV RI W H 6E 6 thin lms deposited by H R H D H H XFH RXJ QH L R R LRQD R H FRD H FHQFH
,Q VLWX 3/ % IRU PLQXWHV DW GLIIHUHQW ODVHU SRZHU GHQVLW DQG W H of ne particles for 6E 6E thin lms prepared by % DQ DQQHD H E
RQHV GHSRVLWHG XQGHU QRUPDO % IRU PLQXWHV laser irradiation [17]. Figure 5 showed that 6E 6 thin lms prepared un
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Revista Científica 55
 which reduce the mean free path length decreasing the conductivity [18].
7 L HIIHF L H HQ H IR H FRQ XF L L RI H D H D H 6E 6 LQ
lms by normal % FRP D H ZL H RQH H R L H XQ H ,Q L X
3/ % ) RP 7DE H ZH RE H H D JH 6E 6 thin lms thickness
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thin lms deposited under normal % H HQ H D JH LFNQH 7 H
formation of thicker lms with a more compact and uniform morphology
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H HD H H 6E ions slowly for the lm growth enhancing the photocon
ductivity [19].

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lms prepared by normal % DQ ,Q L X 3/ % RZH LIIH HQ
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optical absorption coef cient of the as-deposited 6E 6 7 H H D XH D H Applications in the Preparation of Nanomaterials, Singapore,
H R H IR 6E 6 thin lms [20], the optical absorption coef cient is Pan Stanford Publishing Pte. Ltd., 2012.
comparable even higher than the other materials used in thin lm solar
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absorber in photovoltaic devices [21]. PLFDO DWK HSRVLWLRQ ,Q 6FKQHOOHU 7 :DVHU 5 .RVHF 0
Payne D. (eds) Chemical Solution Deposition of Functional
► FNQRZOHGJPHQWV Oxide Thin Films. Springer, Vienna, 2013.

The authors are grateful to Dr. Sadasivan Shaji, FIME, UANL for .RQGURWDV 5RNDV &KHQ &KDR DQG 7DQJ -LDQJ
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support of lab equipment to characterize the 6E 6 thin lms.
[4] Sadasivan, Shaji, García, Linda, Loredo, Shadai, Kri
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Avellaneda, David, 2017, ‘Antimony sul de thin lms prepared
by laser assisted chemical bath deposition’, Applied Surface
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Setumo Victor, Motaung, Tshwafo, Forune Koao, Lehlohonolo,
2019, ‘Structural, morphological and optical studies of zinc
selenide (ZnSe) thin lms synthesized at different deposition
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[6] Zaidan, Yasmeen, 2017, ’The in uence of substrate tem

perature on CdS thin lms properties prepared by pulsed laser
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lid-state nanocrystalline solar cells with an antimony sul de
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hybrid heterojunction solar cells with enhanced photoelectric

56 Revista Científica
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Revista Científica 57