Lecture #16

OUTLINE
The Bipolar Junction Transistor
– Narrow-emitter and/or narrow-collector
– Ebers-Moll model
– Base-width modulation, Early voltage

Reading: Chapter 11.2

Spring 2003 EE130 Lecture 16, Slide 1

Narrow-Emitter and Narrow-Collector

cosh(WE ' / LE ) qVEB / kT

I En = qA DLEE nE 0 (e − 1)
sinh(WE ' / LE )

cosh(WC ' / LC ) qVCB / kT

I Cn = − qA DLCC nC 0 (e − 1)
sinh(WC ' / LC )

I E = qA [( DE
WE′ nE 0 + DB
LB pB 0
cosh(W / LB )
sinh(W / LB ) )(e qVEB / kT
− 1) − ( DB
LB )(
pB 0 sinh(W1 / LB ) e qVCB / kT − 1 )]
= qA[( ) ( )(e )]
cosh(W / LB )
IC DB
LB pB 0 sinh(W1 / LB ) (e qVEB / kT − 1) − DC
WC′ nC 0 + DB
LB pB 0 sinh(W / LB )
qVCB / kT
−1

Spring 2003 EE130 Lecture 16, Slide 2

1
 Performance Parameters (revisited)
1
γ = n iE 2
1 + n DD NN LW 2
E
B
B
Replace with W ’ if short emitter
E E E
iB

1
αT =
1 + 12 ( ) W 2
LB

1
α dc =
1+
ni E 2 D N W
E B
ni B 2 DB N E LE
+ 12 ( )
W 2
LB

1
β dc = ni E 2 D N W
E B
ni B 2 DB N E LE
+ 12 ( )
W 2
LB

Spring 2003 EE130 Lecture 16, Slide 3

Ebers-Moll Model
IC IB
saturation active region
region

V CE
0

The Ebers-Moll model is a large-signal equivalent circuit which

describes both the active and saturation regions of BJT operation.

Spring 2003 EE130 Lecture 16, Slide 4

2
IC is driven by two forces, VEB and VCB .
V EB V CB
If only VEB is applied (VCB = 0):
IB
I E = I F 0 ( e qVEB / kT − 1)
I C = α F I F 0 ( e qVEB / kT − 1) E B C
I B = (1 − α F )I F 0 ( e
IC
qVEB / kT
− 1)

If only VCB is applied (VEB = 0): : αR : reverse common base gain

αF : forward common base gain
I C = − I R 0 (e qVCB / kT − 1)
I E = −α R I R 0 (e qVCB / kT − 1)
I B = I R 0 (1 − α R )(e qVCB / kT − 1)

Spring 2003 EE130 Lecture 16, Slide 5

In the general case, both VEB and VCB are non-zero:

I C = α F I F 0 ( e qVEB / kT − 1) − I R 0 ( e qVCB / kT − 1)
IC: C-B diode current + fraction of E-B diode current that makes it to the C-B junction

I E = I F 0 ( e qVEB / kT − 1) − α R I R 0 ( e qVCB / kT − 1)
IE: E-B diode current + fraction of C-B diode current that makes it to the E-B junction

Spring 2003 EE130 Lecture 16, Slide 6 VCE (V)

3
 Reciprocity Relationship

DB pB 0
α F I F 0 = α R I R 0 ≡ qA
LB sinh(W / LB )

Spring 2003 EE130 Lecture 16, Slide 7

Base-Width Modulation
VBE B
E + N C
N P V CE
emitter base collector

}
WB 3
reduction of base width
WB 2 VCE 1 < VC E2 <VC E3
WB 1

∆nn'
B

1
β dc = niE 2
DE N B W
niB 2 DB N E LE
+ 12 ( )
W 2
LB
x

How can we reduce the base-width modulation effect?

Spring 2003 EE130 Lecture 16, Slide 8

4
 V BE B
E + N C
The base-width modulation N P VCE
emitter base
effect is reduced if we collector

}
WB 3
reduction of base width
(A) Increase the base width, WB 2 VCE 1 < VC E2 <VC E3
(B) Increase the base doping WB 1
n'
concentration, NB , or
(C) Decrease the collector doping
concentration, NC .

Which of the above is the most acceptable action?

Spring 2003 EE130 Lecture 16, Slide 9

Early Voltage

Output resistance :
−1
 ∂I  V
r0 ≡  C  = A
 ∂VCE  IC

IC IB3

(b) IB2 A large VA (i.e. a

VA : Early Voltage IB1
larger ro ) is desirable

VA 0 VCE

Spring 2003 EE130 Lecture 16, Slide 10

5
 Punchthrough

Spring 2003 EE130 Lecture 16, Slide 11

Summary: BJT Performance Requirements

• High gain (βdc >> 1)
→ One-sided emitter junction, so emitter efficiency γ ≈ 1
• Emitter doped much more heavily than base (NE >> NB)
→ Narrow base, so base transport factor αT ≈ 1
• Quasi-neutral base width << minority-carrier diffusion length
(W << LB)

• IC determined only by IB (IC ≠ function of VCE,VCB)

→ One-sided collector junction, so quasi-neutral base width W
does not change drastically with changes in VCE (VCB)
• Based doped more heavily than collector (NB > NC)
(W = WB – xnEB – xnCB for PNP BJT)
Spring 2003 EE130 Lecture 16, Slide 12

6
 Review: Modes of Operation
Common-emitter output characteristics
(IC vs. VCE)

IC
Note that βdc = is lower for inverted mode operation. Why?
IB

Spring 2003 EE130 Lecture 16, Slide 13