FGPF4533 330V, PDP Trench IGBT

August 2010

FGPF4533
330V, PDP IGBT
Features General Description
• High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of
• Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
• High input impedance
• Fast switching
• RoHS compliant

Applications
• PDP System

TO-220F
GC E (Retractable)

Absolute Maximum Ratings

Symbol Description Ratings Units
VCES Collector to Emitter Voltage 330 V
VGES Gate to Emitter Voltage ± 30 V

IC pulse(1)* Collector Current @ TC = 25oC 200 A

Maximum Power Dissipation @ TC = 25oC 28.4 W

PD
o
Maximum Power Dissipation @ TC = 100 C 11.4 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8” from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ. Max. Units
o
RθJC(IGBT) Thermal Resistance, Junction to Case - 4.4 C/W
o
RθJA Thermal Resistance, Junction to Ambient - 62.5 C/W

Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5μsec
* Ic_pluse limited by max Tj

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGPF4533 Rev. B
 FGPF4533 330V, PDP Trench IGBT
Package Marking and Ordering Information
Packaging Max Qty
Device Marking Device Package Qty per Tube
Type per Box
FGPF4533 FGPF4533TU TO-220F Tube 50ea -

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA 330 - - V
ΔBVCES Temperature Coefficient of Breakdown
ΔTJ Voltage
VGE = 0V, IC = 250μA - 0.3 - V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 μA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE 2.4 3.3 4.0 V
IC = 20A, VGE = 15V - 1.15 - V
IC = 50A, VGE = 15V,
VCE(sat) Collector to Emitter - 1.55 1.8 V
TC = 25oC
Saturation Voltage
IC = 50A, VGE = 15V,
- 1.6 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 1294 - pF
Coes Output Capacitance VCE = 30V, VGE = 0V, - 57 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 41 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 6 - ns
VCC = 200V, IC = 20A
tr Rise Time - 22 - ns
RG = 5Ω, VGE = 15V
td(off) Turn-Off Delay Time Resistive Load, TC = 25oC - 40 - ns
tf Fall Time - 220 - ns
td(on) Turn-On Delay Time - 6 - ns
VCC = 200V, IC = 20A,
tr Rise Time - 24 - ns
RG = 5Ω, VGE = 15V,
td(off) Turn-Off Delay Time Resistive Load, TC = 125oC - 42 - ns
tf Fall Time - 277 - ns
Qg Total Gate Charge - 44 - nC
VCE = 200V, IC = 20A
Qge Gate to Emitter Charge VGE = 15V - 6 - nC
Qgc Gate to Collector Charge - 14 - nC

FGPF4533 Rev. B 2 www.fairchildsemi.com

 FGPF4533 330V, PDP Trench IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

200 200
o
TC = 25 C 20V 12V o 20V
10V TC = 125 C 12V
15V
15V 10V

Collector Current, IC [A]

Collector Current, IC [A]

150 150

VGE = 8V
VGE = 8V
100 100

50 50

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
200 200
Common Emitter Common Emitter
VGE = 15V VCE = 10V
o o
Collector Current, IC [A]

TC = 25 C TC = 25 C
Collector Current, IC [A]

150 150 o
o TC = 125 C
TC = 125 C

100 100

50 50

0 0
0 1 2 3 4 5 0 2 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
1.7 20
Common Emitter Common Emitter
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]

o
1.6 VGE = 15V TC = 25 C
16
1.5 50A

1.4 12
50A
1.3 30A
8
30A
1.2
IC = 20A
4
1.1 IC = 20A

1.0 0
0 20 40 60 80 100 120 140 0 4 8 12 16 20
o
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

FGPF4533 Rev. B 3 www.fairchildsemi.com

 FGPF4533 330V, PDP Trench IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics

20 2400
Common Emitter
o Common Emitter
TC = 125 C
Collector-Emitter Voltage, VCE [V]

VGE = 0V, f = 1MHz

16 2000
o
TC = 25 C

Capacitance [pF]
1600
12
Cies
50A 1200
8
30A 800

4 Coes
IC = 20A 400

Cres
0 0
0 4 8 12 16 20 0.1 1 10 30
Gate-Emitter Voltage, VGE [V] Collector-Emitter Voltage, VCE [V]

Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics

15 500
Common Emitter
o
TC = 25 C 100 10μs
Gate-Emitter Voltage, VGE [V]

12
Collector Current, Ic [A]

100μs
1ms
VCC = 100V 10
10 ms
9
DC
200V
1
6
Single Nonrepetitive
Pulse TC = 25oC
3 0.1
Curves must be derated
linearly with increase
in temperature
0 0.01
0 15 30 45 0.1 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]

Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
100 1000

tf
Switching Time [ns]
Switching Time [ns]

tr

10 100

td(on) Common Emitter Common Emitter

VCC = 200V, VGE = 15V td(off) VCC = 200V, VGE = 15V
IC = 20A IC = 20A
o o
TC = 25 C TC = 25 C
o o
TC = 125 C TC = 125 C
1 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [Ω] Gate Resistance, RG [Ω ]

FGPF4533 Rev. B 4 www.fairchildsemi.com

 FGPF4533 330V, PDP Trench IGBT
Typical Performance Characteristics

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
100 400

tr tf

Switching Time [ns]

Switching Time [ns]

100

10
td(on)

Common Emitter Common Emitter td(off)

VGE = 15V, RG = 5Ω VGE = 15V, RG = 5Ω
o o
TC = 25 C TC = 25 C
o o
TC = 125 C TC = 125 C
1 10
10 20 30 40 50 10 20 30 40 50
Collector Current, IC [A] Collector Current, IC [A]

Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current
5000 1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
1000 o Eoff
TC = 25 C
Switching Loss [uJ]
Switching Loss [uJ]

100
o
TC = 125 C Eoff

100 Eon
10 Common Emitter
Eon VGE = 15V, RG = 5Ω
o
TC = 25 C
o
TC = 125 C
10 1
0 10 20 30 40 50 10 20 30 40 50
Gate Resistance, RG [Ω] Collector Current, IC [A]

Figure 17. Turn off Switching SOA Characteristics

500

100
Collector Current, IC [A]

10

Safe Operating Area

o
VGE = 15V, TC = 125 C
0.1
1 10 100 500
Collector-Emitter Voltage, VCE [V]

FGPF4533 Rev. B 5 www.fairchildsemi.com

 FGPF4533 330V, PDP Trench IGBT
Typical Performance Characteristics

Figure 18.Transient Thermal Impedance of IGBT

8

Thermal Response [Zthjc] 0.5

1 0.2
0.1
0.05
PDM
0.1 0.02
t1
0.01 t2
Duty Factor, D = t1/t2
single pulse
Peak Tj = Pdm x Zthjc + TC

0.01
1E-5 1E-4 1E-3 0.01 0.1 1 10 100
Rectangular Pulse Duration [sec]

FGPF4533 Rev. B 6 www.fairchildsemi.com

 FGPF4533 330V, PDP Trench IGBT
Package Dimensions

TO-220F (Retractable)

* Front/Back Side Isolation Voltage : AC 2700V

Dimensions in Millimeters

FGPF4533 Rev. B 7 www.fairchildsemi.com

 FGPF4533 330V, 50A PDP Trench IGBT
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Advance Information
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Datasheet contains the design specifications for product development. Specifications
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may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

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Datasheet contains specifications on a product that is discontinued by Fairchild

Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I48
FGPF4533 Rev. B 8 www.fairchildsemi.com