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Eee212 Spring 2024
Eee212 Spring 2024
Faculty of Engineering
Dept. of Electrical and Electronics Engineering
Course Calendar:
1. Energy bands and charge carriers in 7. DC and AC analysis of BJT.
semiconductors. 8. Field-effect transistors. Junction field
2. Excess carriers in semiconductors. effect transistors (JFET and MOSFET).
3. P-N junction under equilibrium 9. DC and AC analysis of FETs.
conditions. P-N junction under forward 10. Optoelectronic devices: Photodiodes,
and reverse bias conditions. LEDs, and Lasers.
4. Applications of p-n diodes. 11. Power devices: P-n-p-n diode, SCR and
5. Other p-n diodes. (Zener, Varactor) IGBT.
6. Bipolar junction transistor (BJT).
Minority carrier distributions and
terminal currents in BJT.
References:
1) A. S. Sedra & A. Grabel, Microelectronic Circuits & Devices, Oxford University Press,
Last edition
2) B. G. Streetman and S. Banerjee, Solid State Electronic Devices, Prentice Hall Series, 2000.
Exams: There will be at least three quizzes, two midterm exams, and a final exam.
Homework Policy:
Homework will be assigned regularly throughout the semester. Although they will not be graded,
students are encouraged to do the homework since quiz question will be similar to the homework
questions.