2023 SPRING

EEE212 Analog Electronic I

Homework Questions
Q1- The drift velocity of electrons, in silicon

(a) is proportional to the electric field for all values of electric field
(b) is independent of the electric field.
(c) increases at low values of electric field and decreases at high values of electric field
exhibiting negative differential resistance.
(d) increases linearly with electric field at low values of electric field and gradually saturates at
higher values of electric field.

Q2 When a pure semiconductor is heated, its resistance ........

A) goes up
B) goes down
C) remains the same
D) cannot say

Q3 When a pentavalent impurity is added to a pure semiconductor, it becomes ........

A) an insulator
B) an intrinsic semiconductor
C) p-type semiconductor
D) n-type semiconductor

Q4 Addition of pentavalent impurity to a semiconductor creates many ........

A) free electrons B)holes. C) valence electrons D). bound electrons

Q5 A pentavalent impurity has ........ valence electrons.

A) 3 B) 5 C) 4 D) 6

Q6 An n-type semiconductor is ........

A) positively charged. B) negatively charged C) electrically neutral. D) none of the above
Q7. A trivalent impurity has ........ valence electrons.
A) 4 B) 5 C) 6 D) 3

Q8. Addition of trivalent impurity to a semiconductor creates many ........

A) holes B) free electrons C) valence electrons D) bound electrons

Q9. A hole in a semiconductor is defined as ........

A) a free electron B) the incomplete part of an electron pair bond
C) a free proton D) a free neutron

Q10 As the doping to a pure semiconductor increases, the bulk resistance of the
semiconductor ........
A) remains the same B) increases C) decreases D) none of the above

Q11. In a semiconductor, current conduction is due ........

A) only to holes B) only to free electrons C) to holes and free electrons
D) none of the above

Q12. The random motion of holes and free electrons due to thermal agitation is called ........
A) diffusion B) pressure C) ionisation D) none of the above

Q13. A forward biased pn junction has a resistance of the ........

A) order of Ω B) order of kΩ C) order of MΩ D) none of the above

Q14. The battery connections required to forward bias a pn junction are ........
A) +ve terminal to p and −ve terminal to n
B) −ve terminal to p and +ve terminal to n
C) −ve terminal to p and −ve terminal to n
D) none of the above
Q15. In the depletion region of a pn junction, there is a shortage of ..........
A) acceptor ions B) holes and electrons C) donor ions D) none of the above

Q16. A reverse biased pn junction has ........

A) very narrow depletion layer B) almost no current
C) very low resistance D) large current flow

Q17. The leakage current across a pn junction is due to ........

A) minority carriers B) majority carriers
C) junction capacitance D) none of the above

Q18. When the temperature of an extrinsic semiconductor is increased, the pronounced

effect is on........
A) junction capacitance B) minority carriers
C) majority carriers D) none of the above

Q19. With forward bias to a pn junction, the width of depletion layer ........
A) decreases B) increases C) remains the same D) none of the above

Q20. In an intrinsic semiconductor, the number of free electrons ........

A) equals the number of holes B) is greater than the number of holes
C) is less than the number of holes D) none of the above

Q21. At room temperature, an intrinsic semiconductor has ........

A) many holes only B) a few free electrons and holes
C) many free electrons only D) no holes or free electrons
Q22. At absolute temperature, an intrinsic semiconductor has ........
A) a few free electrons
B) many holes
C) many free electrons
D) no holes or free electrons

Q23. At room temperature, an intrinsic silicon crystal acts approximately as ........

A) a battery
B) a conductor
C) an insulator
D) a piece of copper wire

Q24. With the increase in the dopant concentration the bulk resistance of the semiconductor
A) Decreases
B) remains constant
C) increases
D) may increase or decrease depending on the material.

Q25. If ni, ne and np, respectively, denote the number density of charge carriers in intrinsic
material of electrons and holes in a P-type semiconductor, then
(a) ni > np
(b) ni > ne
(c) np < ne
(d) ne > ni.

Q26. Forbidden energy gap in metals is of the order of

(a) > 10 eV
(b) > 3 eV
(c) < 3 eV
(d) 0 eV.

Q27 Diffusion current is caused by

(a) Potential gradient
(b) concentration gradient
(c) temperature gradient
(d) none of these.
Q28 Silicon is doped with boron to a concentration of 4 x 1017 atoms/cm3. Assume the
intrinsic carrier concentration of silicon to be 1.5 x 1010/ cm3 and the value of kT/q to be 25 mV
at 300 K. Compared to undoped silicon, the Fermi level of doped silicon.

Q29 A hypothetical semiconductor has an intrinsic carrier concentration of 1 x 10 10/cm3

at 300 K, it has conduction and valence band effective densities of states N c and Nv ,
both equal to 1019/cm3.
(a) What is the band gap Eg?
(b) If the semiconductor is doped with Nd = 1 x 1016 donors/cm3, what are the equilibrium
electron and hole concentrations at 300 K?
(c) If the same piece of semiconductor, already having Nd = 1 x 1016 donors/cm3, is also doped
with Na = 2 x 1016 acceptors/cm3, what are the new equilibrium electron and hole
concentrations at 300 K?
(d) Consistent with your answer to part (c), what is the Fermi level position with respect to the
intrinsic Fermi level, EF - Ei?

Q30 An abrupt Si p-n junction has Na = 1018 cm-3 on one side and Nd = 5 x 1015 cm-3 on the
other.
(a) Calculate the Fermi level positions at 300 K in the p and n regions.
(b) Draw an equilibrium band diagram for the junction and determine the contact potential V 0
from the diagram.
(c) Compare the results of part (b) with V0 as calculated from V0 equation.

Q31 A small concentration of minority carries is injected into a homogeneous semiconductor

crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the
minority carries a distance of 1 cm in 20 µs. The mobility (in cm2/V-s) will be ….

Q32 An n-type silicon bar 0.1 cm long and 100 µm2 in cross-sectional area has a majority
carrier concentration of 5 x 1020/m3 and the carrier mobility is 0.13 m2/V-s at 300 K. If the
charge of an electron is 1.6 x 10–19 Coulomb, then the resistance of the bar is.

Q33 The resistivity of a uniformly doped n-type silicon sample is 0.5 ohm –cm. If the electron
mobility (µn) is 1250 cm2/V-sec and the charge of an electron is 1.6 x 10–19 Coulomb, the donor
impurity concentration (ND) in the sample is.
Q34. A Silicon sampled is doped with 1018 atoms/cm3 of Boron. Another sample B of identical
dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio of electron to hole mobility
is 3. The ratio of conductivity of the sample A to B is.

Q35 A silicon sample is uniformly doped with donor type impurities with a concentration of
10l6/cm3. The electron and hole mobilities in the sample are 1200 cm2 N-s and 400 cm2 N-s
respectively. Assume complete ionization of impurities. The charge of an electron is 1.6 x 10 –19
C. The resistivity of the sample (in ohm–cm) is _______.

Q36 A silicon sample is uniformly doped with 1016 phosphorus atoms/cm3 and 2 x1016 boron
atoms/ cm3. If all the dopants are fully ionized, the material is …..

Q37 A p-type silicon sample has a higher conductivity compared to an n-type silicon sample
having the same dopant concentration. (True/False)

Q38 A silicon bar is doped with donor impurities ND = 2.25 x 1015 atoms/cm3. Given the
intrinsic carrier concentration of silicon at T= 300 K is ni = 1.5 x 1010 cm–3. Assuming complete
impurity ionization, the equilibrium electron and hole concentrations are

Q39 Consider an unbiased p-n junction.

(a) Draw the band diagram (conduction band, valence band, Fermi energy).
(b) As the pn-junction is heated up, the Fermi energy moves on the p-side and on the n-side.
How does it move? What happens to the built-in voltage as the p-n junction warms up?
(c) The p-n junction is forward biased with a voltage VF. What is the maximum concentration of
holes on the n-side and the minimum concentration of holes on the n-side? Give your answers
in terms of the donor concentration Nd��, the acceptor concentration Na��, and ni��.
(d) Light falls on the p-n junction. Does the current flow towards p or towards n?

Q40. Describe the difference between n -type and p -type semiconductor materials.
Q41. Describe the difference between donor and acceptor impurities.
Q42. Describe the difference between majority and minority carriers.
Q43. Describe in your own words the conditions established by forward- and reverse-bias
conditions on a p–n junction diode and how the resulting current is affected.
Q44. Describe how you will remember the forward- and reverse-bias states of the p – n
junction diode. That is, how will you remember which potential (positive or negative) is applied
to which terminal?
Q45.. a. Determine the thermal voltage for a diode at a temperature of 20°C.
b. For the same diode of part (a), find the diode current if Is = 40 nA, ƞ =1 and the
applied bias voltage is 0.5 V.
 c. for T =100°C (boiling point of water). Assume that Is has increased to 5.0 µA.
Q46. Given a diode current of 6 mA, VT = 26 mV, ƞ=1, and Is =1 nA, find the applied voltage VD.
Q47. Describe in your own words how diffusion and transition capacitances differ.
Q48 Determine the current I for each of the configurations using the approximate
equivalent model for the diode.

Q49. A Si sample is doped with 1017 As atoms/cm3. What is the equilibrium hole concentration
p0 at 300 K? Where is EF relative to Ei?

Q50.
(a) A Si bar 1 µm long and 100 µm2 in cross-sectional area is doped with 1017 cm-3 phosphorus.
Find the current at 300 K with 10V applied.
(b) How long does it take an average electron to drift 1 µm in pure Si at an electric field of 100
V/cm? Repeat for 105 V/cm.

Q51. A Ge sample is doped with 1014/cm3 As atoms/cm3. What will be the equilibrium hole
concentration? What is the relative position of Fermi level w.r.t intrinsic energy level?
[Given: ni = 2.5x1013/cm3]

Q52. A new semiconductor has Nc = 1019 cm-3, Nv = 5 x 1018 cm-3, and Eg = 2 eV. If it is doped
with 1017 donors (fully ionized), calculate the electron, hole, and intrinsic carrier concentrations
at 627Co. Sketch the simplified band diagram, showing the position of EF.

Q53. A 2 cm long piece of Si with cross-sectional area of 0.1 cm2 is doped with donors at 1015
cm-3, and has a resistance of 90 ohms. The saturation velocity of electrons in Si is 10 7 cm/s for
fields above 105 V/cm. Calculate the electron drift velocity, if we apply a voltage of 100 V across
the piece. What is the current through the piece if we apply a voltage of 10 6 V across it?
Q54.

Q55. List the type (holes, electrons, ions), sign (+/-) and concentrations of all charges in silicon
doped with1017/cm3 As and 1015/cm3 Boron. Be sure to mention whether each charge is mobile
or not.

Q56. What are the four types of currents you can find across a p-n junction in thermal
equilibrium?

Q57 You are given doped silicon that at thermal equilibrium has an electron concentration
1016/cm3. What is the built-in potential with reference to intrinsic silicon?

Q58 What happens to ni if the temperature increases? Give a brief qualitative explanation.

Q59 What is the concentration of holes, electrons and positive/gnegative ions if Si is doped
with 1017 Boron atoms/cm3, and 1019 As atoms/cm3 at room temperature? (ni = 1010)

Q60 A piece of silicon is doped with Na = 2x1015 cm-3 and Nd = 1x1015 cm-3
a) What is the majority carrier? Is the silicon type n or type p?
b) Find the electron and hole concentration and mobility at room temperature.
c) We want increase the electron concentration to 1x1017 cm-3. What is the
additional dopant type and concentration?
Q61

Q62

Q63 A pn junction employs the following doping levels: NA = 1016 cm−3 and ND = 5 x 1015 cm−3.
Determine the hole and electron concentrations on the two sides.
Q64 A silicon pn junction employs NA = 2 x 1016 cm−3 and ND = 4 x 1016 cm−3. Determine the
built-in potential at room temperature (T = 300 K).
V0 is a weak function of the doping levels. How much does V0 change if NA or ND is increased by
one order of magnitude?

Q65 A diode operates in the forward bias region with a typical current level [i.e., I D ≈ IS
exp(VD/VT)]. Suppose we wish to increase the current by a factor of 10. Howmuch change in V D
is required?

Q66 The cross section area of a diode operating in the forward bias region is increased by a
factor of 10. (a) Determine the change in ID if VD is maintained constant. (b) Determine the
change in VD if ID is maintained constant. Assume ID ≈ IS exp(VD/VT).

Q67 The intrinsic carrier concentration of germanium (GE) is expressed as

ni = 1.66 x 1015T3/2 exp −Eg/2kT cm−3, where Eg = 0.66 eV.
(a) Calculate ni at 300 K and 600 K
(b) Determine the electron and hole concentrations if Ge is doped with P at a
density of 5 x 1016 cm−3. Rezavi prob 2.1

Q68 The electrons in a piece of n-type semiconductor take 10 ps to cross from one end to
another end when a potential of 1 V is applied across it. Find the length of the semiconductor
bar.

Q69 A current of 0.05 μA flows through an n-type silicon bar of length 0.2μm and cross
section area of 0.01μm x 0.01μm when a voltage of 1 V is applied across it. Find the
doping level at room temperature.

Q70 A Si semiconductor cube with side equal to 1 μm is doped with 4 x 10 −17 cm−3
phosphorous impurities. Calculate the drift current when a voltage of 5 V is applied across it.
Q71 One side of pn junction is doped with pentavalent impurities which gives a net doping of
5 x1018 cm−3. Find the doping concentration to be added to the other side to get a built-in
potential of 0.6 V at room temperature.

Q72 The built-in potential of an equally doped pn junction is 0.65 V at room temperature.
When the doping level in n-side is doubled, keeping the doping of the p-side unchanged,
calculate the new builtin potential and the doping level in P and N region.

Q73 Consider n-type GaAs at T = 300 K doped to a concentration of Nd = 2x 10 16 cm−3 .

Assume mobility values of μn = 6800 cm2/V–s and μp = 300 cm2/V–s. (a) Determine the
resistivity of the material. (b) Determine the applied electric field that will induce a drift current
density of 175 A/cm2.

Q74 (a) The applied electric field in p-type silicon is E = 10 V/cm. The semiconductor
conductivity is σ = 1.5 (ohm–cm) −1 and the cross-sectional area is A = 10−5 cm2. Determine the
drift current. (b) The cross-sectional area of a semiconductor is A = 2 × 10 −4 cm2 and the
resistivity is ρ = 0.4 (ohm–cm). If the drift current is I = 1.2 mA, what applied electric field must
be applied?

Q75 A drift current density of 120 A/cm2 is established in n-type silicon with an applied
electric field of 18 V/cm. If the electron and hole mobilities are μn = 1250 cm 2/V–s and μp = 450
cm2/V–s, respectively, determine the required doping concentration.

Q76 (a) The required conductivity of a silicon material must be σ = 1.5 (ohm–cm) −1. If μn =
1000 cm2/V–s and μp = 375 cm2/V–s, what concentration of donor atoms must be added? (b)
The required conductivity of a silicon material must be σ = 0.8 (ohm–cm) −1. If μn = 1200 cm2/V–
s and μp = 400 cm2/V–s, what concentration of acceptor atoms must be added?
Q77

n-side p-side
𝜏p= 10µs 𝜏s =0.1 µs
2
µn=1350 cm /v.s µn=700 cm2/v.s
µp=450 cm2/v.s µp=200 cm2/v.s
ni=10 cm εr= 11.8, ε0= 8.85x10-12 F/m q=1.6x10-19 C. A=10-4 cm2
10 -3

Hint: The carriers have a saturation drift velocity of 107 cm/s if the applied electric field is larger
than 104 V/cm
For Sample 1
a) If the conductivity of Sample 1 is 3.8 S/cm, find out the electron and hole concentrations
for the Sample 1.
b) Show the Fermi Level for the Sample 1 respect to intrinsic energy level of Silicon.
c) If the length of the sample l=5 µm , find the current densities for 2.5 and 2500 Volt.
For Sample 2
d) Under equilibrium, draw the energy-band diagram for the Sample 2, Show the Fermi
energy levels respect to intrinsic silicon fermi energy level. Calculate potential barrier
voltage, space-charge region width W, and xn0 and xp0.
e) Calculate the reverse-saturation current.
f) Calculate forward current I, rj and rB for 0.5V forward bias.
Q78
The objective of the engineer is to create a resistor for a high-temperature oven that functions
at 400K, and to accomplish this, they have chosen to use a Si semiconductor material for the
resistor.

Requirents:
1- This resistor must be designed in planar shape with 10µm length and 1µm 2 cross-
section.
2- Difference between Fermi Level (EF) and Intrincsic Level (Ei) must be 0.42eV

Si Materials Properties
Eg(Band gap)
−4 2
4.73 ×10 T
E g=1.166− eV
T +636
Si intrinsic concentration:
15 3 /2
ni =7.3× 10 × T exp ⁡(−E g /2 kT )

What are the intrinsic, electron and hole concentrations?

Find the current with 5 V and 100 V applied on this resistor?

Hint: The carriers have saturation drift velocity of 107 cm/s if the applied electric field is larger
than 104 V/cm