Design and Performance Studies of The Scanning Magnetron in Terms of V-I Characteristics, Dependence of V-I Characteristics On Scanning Speed, Deposition Rate and Substrate Temperature
geometric stretching and compression result in a measurable resistance change due to length and thickness differences induced. strain gauges • Especially in the case of measuring small forces, the use of conventional foil strain gauges is limited. • Strain gauges in thin film technology present a potential solution to overcome these. Thin-film sensors
• For a thin-film sensor, four resistors are arranged
on a diaphragm in the form of a Wheatstone bridge to detect the deformation of the diaphragm under pressure. Thin-film Force sensors Thin film sensor technology An electrically insulating layer completely covering the body. By this layer, an electrical separation of the metallic and therefore electrically conducting deformation element from the following metallic sensor layer is achieved. Thin film sensor technology • An electrically insulating layer completely covering the body. • By this layer, an electrical separation of the metallic and therefore electrically conducting deformation element from the following metallic sensor layer is achieved. • To achieve the conductive paths and, thereby, the geometry of the sensor pattern, the second layer (i.e., the sensor layer) is structured by photolithography. Thick-film sensors • Thick-film sensors, like thin-film sensors, use four resistors grouped to form a Wheatstone bridge. • The resistance structures are “printed” onto a base element using thick-film technology, and afterwards they are burnt-in at high temperature. • The resistance change here is also due to the deformation of the diaphragm, resulting from the geometrical change caused by the stretching and compression of the material.
Design and Performance Studies of The Scanning Magnetron in Terms of V-I Characteristics, Dependence of V-I Characteristics On Scanning Speed, Deposition Rate and Substrate Temperature