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Set 7 Transistor Circuit High Frequency Response
Set 7 Transistor Circuit High Frequency Response
Set 7 Transistor Circuit High Frequency Response
Mark Rodwell
University of California, Santa Barbara
Goals
Goals :
Become expert in circuit analysis.
Become expert in LaPlace methods.
Csb Cdb
Csb and Cdb are source - bulk (substrate) and drain - bulk PN junction capacitances.
Cin and Cout will reduce the circuit gain at low frequencie s.
Cgs and C gd will reduce the circuit gain at high frequencie s.
class notes, M. Rodwell, copyrighted 2013
Cin and Cout will reduce the circuit gain at low frequencie s.
Cgs and C gd will reduce the circuit gain at high frequencie s.
class notes, M. Rodwell, copyrighted 2013
To solve circuit :
# of equations # of unknowns # of unknown node voltages
the equations must be * linearly independent * .
Write currents 0 at each node which you do not know the voltage.
node
N (s)
Vout ( s ) H ( s )Vgen ( s ) Vgen ( s )
D( s)
where
Gi sCgs sCgd sCgd
D( s)
g m sCgd GLeq sCgd
and
Gi sCgs sCgd Ggen
N ( s)
g m sCgd 0
class notes, M. Rodwell, copyrighted 2013
D( s ) / Gi GLeq
1 sRi Rleq Gi C gd GLeq C gs GLeq C gd g mC gd s 2 Ri Rleq C gsC gd
D( s ) Ri Rleq 1 s Rleq C gd Ri C gs Ri C gd g m Ri Rleq C gd s 2 Ri Rleq C gsC gd
1 sR Ci gs R C
i gd (1 g R
m leq ) R C
leq gd
s 2
Ri Rleq C gsC gd
class notes, M. Rodwell, copyrighted 2013
N ( s ) Ggen g m 1 sCgd / g m
D( s ) Ri Rleq 1 s Ri C gs Ri C gd (1 g m Rleq ) Rleq C gd s 2 Ri Rleq C gsC gd
So
Vout ( s ) Ggen Ri Rleq g m 1 sCgd / g m
H (s)
Vgen ( s ) 1 s Ri C gs Ri C gd (1 g m Rleq ) Rleq C gd s 2 Ri Rleq C gsC gd
class notes, M. Rodwell, copyrighted 2013
Vout
H ( s ) H mid band H normalized( s )
Vgen
1 sCgd / g m
H normalized( s )
1 s Ri C gs Ri C gd (1 g m Rleq ) Rleq C gd s 2 Ri Rleq C gsC gd
Example
class notes, M. Rodwell, copyrighted 2013
0.52 V 0.7 V
g m 0.47 mS
100 k Gds 5S
520 k 50 k
1 A 50 A
FET :
I D
I D ( coxWg / 2 Lg )(Vgs Vth ) 2 (1 VDS ) g m ( coxWg / Lg )(Vgs Vth )(1 VDS )
Vgs
g m (2mA/V 2 )(0.52V 0.3V)(1 0.7V/10V ) 0.471 mS
I D I D 50 A 1
Gds I D 5S
Vds (1 VDS ) 10V 200 k
class notes, M. Rodwell, copyrighted 2013
200k
100 k 52 k || 50k
25.5k
g m 0.47 mS
520 k || 2.78M
438k
class notes, M. Rodwell, copyrighted 2013
g m 0.47 mS
1 pF 0.25 pF
82k 22.6k
class notes, M. Rodwell, copyrighted 2013
a1 Ri C gs Ri C gd g m Ri Rleq C gd Rleq C gd
82k 1pF 82k 0.25pF 0.47 mS 82k 22.6k 0.25pF 22.6k 0.25pF
0.326 s
a2 Ri Rleq C gsC gd a2 / a1 82k 22.6k 1pF 0.25pF/0.326 s 1.42ns
a2 / a a1 , so, separated pole approximation works.
b1 C gd / g m 0.25pF/0.47mS 0.532 ns
class notes, M. Rodwell, copyrighted 2013
Vout ( s) 1 b1s
8.65
Vgen ( s) (1 a1s)(1 (a2 / a1 ) s)
a1 0.326s, a2 / a1 1.42ns, b1 0.532 ns
Vout ( j 2f ) 1 jf / f z
8.65
Vgen ( j 2f ) (1 jf / f p1 )(1 jf / f p 2 )
0.159 0.159
f p1 488 kHz, f p 2 112 M Hz
0.326s 1.42ns
0.159
fz 299 M Hz (zero in the right half of the s - plane)
532ps
class notes, M. Rodwell, copyrighted 2013
Ri C gs
Vout
g mVi RLeq
Exact solution
a1 Ri C gs Ri C gd g m Ri Rleq C gd Rleq C gd
a2 Ri Rleq C gd C gd
class notes, M. Rodwell, copyrighted 2013