TOPIC-

Abstract— biosensors. Different electrical properties of biomolecules

like proteins, DNA, and enzymes can impact how well
Keywords— biosensors work. To ensure the accuracy and dependability
of biosensors, it is crucial to assess their performance in
I. INTRODUCTION various biomolecules.
Biosensors have become a promising technology for many
uses, including environmental monitoring, food safety, and Compared to conventional MOSFET-based biosensors, the
healthcare. The high sensitivity and low power consumption suggested design of gate stack MOSFETs has several
of metal oxide semiconductor field effect transistor benefits. The use of double gates gives the channel region
(MOSFET) based biosensors have made them a popular better control, enhancing sensitivity and lowering noise.
choice among the various types of biosensors. MOSFET- Additionally, the better amplification of small signals is a
based biosensors work by identifying alterations in the result of the higher transconductance generation factor of
device's electrical characteristics brought on by the presence gate stack MOSFETs.
Physical Parameters Values
The development of biosensors with increased accuracy and
Length of Channel 32nm dependability for various applications will be significantly
impacted by this research. The suggested design can be used
(Thickness of HfO2 ) 6nm for the detection of different biomolecules in environmental
monitoring, food safety, and medical diagnosis. The
1 nm outcomes of this study can also be applied to the
(Thickness of SiO2)
enhancement and optimisation of current biosensor
technologies.
(Thickness of 6 nm Overall, by examining the potential benefits of gate stack
nanocavity ) MOSFETs for biomolecule detection, this research aims to
contribute to the development of biosensors with improved
(Thickness of the Si 16 nm performance and dependability.
channel)

(Source/Drain region 1x II. DEVICE CONFIGURATION AND

doping concentration) SIMULATION

(Si Channel region 1x

doping concentration)
of biomolecules.

However, short-channel effects (SCEs), which can result in

decreased transconductance and sensitivity, place a cap on
the performance of MOSFET-based biosensors. Modern
MOSFETs' reducing device dimensions, which can lead to
higher leakage current and decreased gate control over the
channel region, are the root cause of SCEs. The precision
and dependability of MOSFET-based biosensors may be
impacted by these constraints.
Fig 1- A stimulated structure of the proposed device
Double gate stack MOSFETs have been suggested as a
possible remedy for biosensor applications to get over these Silvaco TCAD software was used to design the gate stack
constraints. In comparison to conventional MOSFETs, the MOSFET biosensor that was proposed. A silicon substrate
double gate stack MOSFET structure offers better control with a thickness of 300 nm, a gate oxide layer with a
over the channel region and lower SCEs. The use of twin thickness of 2 nm, and a gate stack with two gates separated
gates enables better electric field modulation in the channel by a dielectric layer made up the structure of the device. The
region, enhancing sensitivity and lowering noise. width and length of the channel were set at 1000 nm and 50
nm, respectively.
In this study, we examine how gate stack MOSFETs
perform when exposed to various biomolecules for use as
biosensors. To assess the effectiveness of the suggested Every characteristic has been taken into account in the
design, we analyse various parameters like transconductance International Roadmap for Semiconductor Technology
and sensitivity. Due to its lower SCEs and enhanced control (ITRS). Designs have a gate length (Lg) of 32 nm and a gate
over the channel region, the proposed design is anticipated oxide thickness (tox2) of 1 nm, while the source and drain
to perform better than conventional MOSFET-based lengths are assumed to be 10 nm and the channel thickness to
be 16 nm, respectively. Tox1 and Tox2 address the thickness
of the entryway oxides, which are 6 nm and 1 nm,
individually, while tbio addresses the thickness of the
nanogap depression.
The nanogap cavity's length is 8 nm, while the gate
oxide's length is 16 nm.
The device has consistent p-type doping in the channel at
a concentration of 1016 cm-3, and consistent n-type doping in
the source and drain areas at a concentration of 10 20 cm-3.
while additionally considering charged biomolecules such as
DNA. The nanogap cavity is filled with air with a K of one in
the absence of a biomolecule. The Boltzmann transport
model and the Shockley Read Hall (SRH) recombination
model were taken into account in the calculations for the
electrostatics and current of the device. The continuous
mobility model and the field-dependent mobility (FLDMOB)
model are also included. Quantum effects, on the other hand,
have not been taken into account. A nanogap pit is made by
carving the twofold door MOSFETs at the channel region
from the source end.
III Results and Discussion:
Here, various analog, rf and sensitivity parameters for
biosensors are taken into account to study the effects of
temperature. Using Silvaco TCAD we investigated critical
parameters which include drain current, transconductance,
gate-to-source capacitance, gate-to-drain capacitance and
transconductance generation factor.
Fig 2- Transfer characteristics of Gate Stack DGMOS
biosensor having protein as a biomolecule at different
temperatures
Figure 2 shows the transfer characteristics of a Gate Stack
DGMOS biosensor using protein as a biomolecule at -30 0C,
30 0C, and 50 0C. The increase in the deterioration of carrier
mobility causes the current to drop with increasing
temperature. The graph shows how current decreases as
temperature rises.
Fig 3-Variation of transconductance w.r.t temperature
having protein as a biomolecule
Fig 3 -The transconductance (gm) fluctuates with Vgs when
protein is utilized as a biomolecule at different temperatures,
as seen in Fig. 3. Trans-conductance is the measure of a
crucial measure of MOS device merit, defined as the
variation in current ID concerning Vgs as shown in the
equation (gm=Id/Vgs). It has been shown that when the
temperature rises, transconductance (gm) decreases as the
current increases. It is feasible to calculate the gain of the
device and, subsequently, the gain bandwidth product for the
specified settings using this particular parameter. As a result,
a higher gain of the device is due to higher transconductance
which will help in enhancing the signals.
Fig 4- Variation of Transconductance generation factor
with respect to different temperatures having protein as
a biomolecule
Fig 4 This plot depicts that TGF is higher at lower
temperatures and vice versa because the mobility of
electrons and holes which determines the current carrying
capability of the MOSFET, is higher at lower temperatures
and lower at higher temperatures. Therefore, the MOSFET
can convert small signal voltages into larger changes in
drain current more effectively at lower temperatures.
Conversely, at higher temperatures, the mobility decreases
due to increased thermal agitation, leading to a lower gm/id
value.
Fig.5- Variations of gate to source capacitance(Cgs)with
respect to gate to source voltage(Vgs) with Protein as
biomolecule.
Figure 5 illustrate the simulation results of the parasitic
capacitance Cgs as a function of the gate-to-source voltage
(Vgs) for protein under different temperature conditions(-
30°C, 30°C, and 50°C). Regarding the effect of bio-
molecules on Cgd, the presence of protein within the cavity
can increase the effective dielectric thickness between the
gate and channel, resulting in a higher Cgd.
 Graph displays the variation of transconductance (gm) with
respect to Vgs for a biosensor utilizing protein at different
temperatures(-30°C, 30°C, and 50°C). Transconductance is
a crucial parameter for MOS devices, representing the
change in drain current (ID) in response to a change in Vgs
(gm=∂Id/∂Vgs), which can be used to determine the device's
gain and gain bandwidth product. The graph shows that the
transconductance decreases with an increase in temperature,
consistent with the decline in current.

Fig.6- Variations of gate to drain capacitance(Cgd)with

respect to gate to source voltage(Vgs) with Protein as a
biomolecule.

Figure 6 illustrates the simulation results of the parasitic

capacitance Cgd as a function of the gate-to-source voltage
(Vgs) for protein under different temperature conditions(-
30°C, 30°C, and 50°C). In the cut-off mode, where no
channel is present, the capacitance values remain at zero as
there is no inversion. However, for the linear mode of
operation, certain capacitance values increase progressively
with an increase in gate voltage. The graphs depict the Fig.9- Variations of transconductance(gm)with respect to
changes in parasitic capacitance with respect to Vgs and gate to source voltage(Vgs) with keratin as biomolecule.
temperature.
Graph displays the variation of transconductance
efficiency(gm/Id) with respect to Vgs for a biosensor
utilizing keratin as the biomolecules at different
temperatures(-30°C, 30°C, and 50°C).
As temperature increases, the mobility of charge carriers in
the MOSFET channel. decreases. This can lead to a
reduction in the drain current (Id) and, consequently, a
decrease in the value of gm/Id.

Fig.7- Variations of drain current(Id) with respect to the

gate to source voltage(Vgs) with keratin as a
biomolecule.

Figure 7 illustrates the behaviour of the drain current with

respect to the Gate to Source Voltage for a biosensor using
protein, at various temperatures (-30°C, 30°C, and 50°C).
The graph demonstrates that the current decreases as the
temperature increases due to a deterioration in carrier
mobility. Moreover, the plots exhibit a declining trend in the
drain current as the temperature rises.
Fig.10-Variations of gate to source capacitance(Cgs)with
respect to gate to source voltage(Vgs) with keratin as
biomolecule.
Figure 10 illustrate the simulation results of the parasitic
capacitance Cgs as a function of the gate-to-source voltage
(Vgs) and keratin biomolecules, under different temperature
conditions(-30°C, 30°C, and 50°C). Regarding the effect of
bio-molecules on Cgd, the presence of keratin within the
cavity can increase the effective dielectric thickness between
the gate and channel, resulting in a higher Cgd.

Fig.8- Variations of transconductance(gm)with respect to

gate to source voltage(Vgs) with keratin as biomolecule
Fig.11- Variations of gate to drain capacitance(Cgd)with
respect to gate to source voltage(Vgs) with keratin as
biomolecule.
Figure illustrate the simulation results of the parasitic
capacitance Cgd as a function of the gate-to-source voltage
(Vgs) for keratin biomolecules, under different temperature
conditions(-30°C, 30°C, and 50°C). In the cut-off mode,
where no channel is present, the capacitance values remain
at zero as there is no inversion. However, for the linear
mode of operation, certain capacitance values increase
progressively with an increase in gate voltage. The graphs
depict the changes in parasitic capacitance with respect to
Vgs and temperature, providing insight into the behaviour of
the MOSFET biosensor when detecting different bio-
molecules under varying operating conditions.
Fig.12- Variations of drain current(Id) with respect to
the gate to source voltage(Vgs) with Protein, Keratin as
biomolecules and air as without biomolecules.
Figure 12 illustrates the relationship between the drain
current(Id) and the presence of bio-molecules within the
cavity, as indicated by the voltage applied to the gate (Vgs).
Notably, the graph displays a more distinct variation in drain
current for protein and keratin, which can be attributed to
the changes in the effective capacitance across the gate and
channel caused by an increase in the dielectric thickness
Fig.13- Variations of transconductance(gm)with respect
to the gate to source voltage(Vgs) Keratin as
biomolecules and air as without biomolecules.
Figure 13 illustrates demonstrates how the transconductance
(gm) varies with Vgs when protein, keratin is used as
biomolecules and air is without biomolecules. When keratin
and protein are present in the cavity, the effective
capacitance between the gate and channel increases due to
the higher dielectric constant of the keratin and protein,
resulting in a higher transconductance. This increase in
transconductance is reflected in the graph of gm vs. Vgs,
which shows a steeper slope for keratin and protein
compared to air.
On the other hand, when air is present in the cavity, the
effective capacitance is lower, resulting in a lower
transconductance. The graph of gm vs. Vgs for air shows a
less steep slope compared to keratin and protein.
Fig.14- Variations of transconductance (gm/Id)with
respect to the gate to source voltage(Vgs) with Protein,
Keratin as biomolecules and air without biomolecules.
Figure 14 illustrates how the transconductance
efficiency(gm/Id) varies with Vgs when protein, keratin is
used as biomolecules and air is without biomolecules. The
transconductance efficiency is influenced by the changes in
the surface potential induced by the binding of biomolecules
to the gate surface. As the biomolecules bind to the gate
surface, they modify the charge density and the effective
thickness of the oxide layer, which can alter the device's
electrical characteristics. This effect can be reflected in the
variation of the gm/Id ratio with respect to Vgs.
Therefore, in general, it is possible to observe different
transconductance efficiency values for keratin, protein, and
air, depending on the specific conditions and the design of
the biosensor.
 The sensitivity of biosensors in terms of change of drain
current:

…………….(1)

The sensitivity of a biosensor in terms of change in I ON/IOFF

ratio:

……..(2)

Fig.15-Variations of gate-to-source capacitance(Cgs)with The sensitivity of a biosensor in terms of change in the

respect to gate-to-source voltage(Vgs) with Protein, change in Vth:
Keratin as biomolecules and without biomolecules.

Due to the accumulation of charge carriers in the channel ……..(3)

region, which reduces the capacitance between the gate and
source, the Cgs generally decrease as the Vgs increase. In
any case, when the biomolecules, for example, keratin and
protein are brought into the detecting region, they can frame
a layer on top of the entryway oxide, consequently
expanding the powerful thickness of the dielectric layer.
Accordingly, the Cgs additionally increment because of the
expansion in the compelling capacitance between the gate
and source.
However, when only air is present in the sensing region, the
dielectric layer is somewhat thinner, resulting in a lower
effective capacitance and, consequently, a lower Cgs.
Subsequently, the presence of bio-particles in the detecting
region can prompt a tremendous change in the Cgs of the
DG-MOSFET biosensor.

Fig 17-Variations of drain current sensitivity with

respect to different temperatures with protein as a
biomolecule.

Fig.16-Variations of the gate-to-drain

capacitance(Cgd)with respect to the gate-to-source
voltage(Vgs) with Protein, Keratin as biomolecules and
without biomolecules.
Fig.18-Variations of drain current sensitivity with
The drain-to-source capacitance (Cgd) of a DG MOSFET-
respect to different temperatures with keratin
based biosensor can vary with the presence of different
as biomolecule.
biomolecules, such as keratin, protein, and air, as well as the
voltage applied to the gate (Vgs). Generally, the Cgd
decreases with an increase in Vgs due to an increase in the
Figures 17 and 18 illustrate the differences in drain current
depletion region width near the drain region, which reduces
sensitivity for protein and keratin as
the overlap between the gate and the channel. biomolecules, under different temperature conditions(-30°C,
30°C, and 50°C.). As temperature increases the drain current
IV SENSITIVITY ANALYSIS: sensitivity of device increases because carrier mobility
decreases at high temperature due to which drain current is
This section examined several sensing metrics in connection
to temperature variation for protein as a biomolecule. reduced.A reduction in drain current reduces the voltage
drop across the gate oxide, increasing the sensitivity
 Fig.22-Variations of Sub-threshold voltage sensitivity
with respect to different temperatures with
keratin as biomolecule

Figures 19,20,21 and 22 illustrate the differences in

Fig.19-Variations of threshold voltage sensitivity with threshold voltage and sub-threshold voltage sensitivity for
respect to different temperatures with protein and keratin as biomolecules, under different
protein as biomolecule. temperature conditions(-30°C, 30°C, and 50°C). The
biosensor with a gate stack is more sensitive to changes
Firstly, at higher temperatures, the mobility of charge
carriers in the semiconductor material can degrade due to
increased scattering by lattice vibrations and other defects.
This leads to a decrease in the overall conductivity of the
device, which can result in a shift in the Vth(threshold
voltage) and Vt(sub-threshold voltage) either side but from
this raph we can illustrate that at higher temperature Vth and
Vt are less due to which they will require a less gate voltage
to turn on the device.

Fig.20-Variations of threshold voltage sensitivity with

respect to different temperatures with
keratin as biomolecule.

Fig.23-Variations of Ion/ Ioff sensitivity with respect to

different temperatures with protein as biomolecule

Fig.21-Variations of Sub-threshold voltage sensitivity

with respect to different temperatures with
protein as biomolecule.
Fig.24-Variations of Ion/ Ioff sensitivity with respect to Fig.26-Variations of threshold sensitivity with respect to
different temperatures with keratin as biomolecule. different biomolecules.

Figures 23 and 24 illustrate the differences in Ion/ Ioff

sensitivity for protein and keratin as biomolecules, under
different temperature conditions(-30°C, 30°C, and
50°C.).The sensitivity of the ion/ion-off ratio (current on/off
ratio) of a DG MOSFET biosensor can be affected by
changes in temperature. we can illustrate that at higher
temperature Vth is less due to which they will require a
less gate voltage to turn on the device. When the Vth is
lowered, the on-state current (Ion) typically increases, while
the off-state current (Ioff) decreases, resulting in an increase
in the Ion/Ioff ratio. Overall, a lower value of Vth can result
in a higher sensitivity of the biosensor, as smaller changes in
the biomolecule concentration can be detected.The results
show that a gate stack device with keratin has a higher
threshold and sub-threshold sensitivity than protein at low
temperature because a higher dielectric constant leads to a Fig.27-Variations of sub-threshold sensitivity with
higher gate capacitance and, consequently, a higher Ion/Ioff respect to different biomolecules.
sensitivity.

Fig.25-Variations of drain current sensitivity with

respect to biomolecules.
Fig.28-Variations of Ion/ Ioff sensitivity sensitivity with
respect to different biomolecules.

Figures 25 ,26, 27 and 28 shows that a gate stack device

with keratin has a higher drain current, threshold,sub-
threshold and Ion/Ioff sensitivity than protein at because a
higher dielectric constant leads to a higher gate capacitance
and, consequently, a higher sensitivity in Id, Vth, Vt,
Ion/Ioff.

V Conclusion:
The features of a Gate Stack DGMOSFET-based Biosensor
are examined in this research for diverse biomolecules at
various temperatures. The analysis is conducted in both low
and high temperatures. The device performance has been
analyzed which indicates that the performance parameters
like drain current, transconductance, and transconductance
generation factor increase with a decrease in temperature
and vice versa. The sensitivity parameters of the device are
also increasing with an increase in temperature and
decreasing at low temperatures. The device has higher
sensitivity at lower temperatures as the device conducts at
lower gate voltage due to gate stack technology and
subthreshold slope. The results obtained provide an
understanding of the potential of this MOSFET-based
biosensor to function under various circumstances and
deliver advanced results in the future.
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