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Comset Semiconductor bt138 - C143faebda
Comset Semiconductor bt138 - C143faebda
Comset Semiconductor bt138 - C143faebda
BT138 Series
TRIACS
FEATURE
Value
Symbol Ratings Unit
BT138-500 BT138-600 BT138-800
Repetitive peak off-state
VDRM 500 600 800
voltage
V
Repetitive peak reverse
VRRM 500 600 800
voltage
IT(RMS) RMS on-state current 12 A
Non-repetitive peak on-state
ITSM 95 A
current
PGM Peak gate power 5 W
PG(AV) Average gate power 0.5 W
Tstg Storage temperature range -45 to +150 °C
Operating junction
Tj 110 °C
temperature
THERMAL CHARACTERISTICS
BT138 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
BT137-500 500 - -
Repetitive peak off-state
VDRM ID = 0.1 mA BT137-600 600 - -
voltage
BT137-800 800 - -
V
BT137-500 500 - -
Repetitive peak reverse
VRRM ID = 0.5 mA BT137-600 600 - -
voltage
BT137-800 800 - -
T2+ G+ - - 30
VD = 12 V
T2+ G- - - 30
IGT Gate trigger current RL = 100 Ω mA
T2- G- - - 30
T2- G+ - - 100
T2+ G+ - - 1.5
VD = 12 V
T2+ G- - - 1.5
VGT Gate trigger voltage RL = 100 Ω V
T2- G- - - 1.5
T2- G+ - - 1.8
T2+ G+ - - 60
VD = 12 V T2+ G- - - 90
IL Latching current mA
IGT = 100 mA T2- G- - - 60
T2- G+ - - 90
IH Holding current IT = 200 mA, IGT = 50 mA - - 50 mA
VD = VDRM max
ID Off-state leakage current - - 0.5 mA
Tj = 125°C
VT On-state voltage IT = 15 A - - 1.7 V
VDM = 67% VDRMmax
Critical rate of rise of Tj = 125°C
dVD/dt 100 250 - V/µs
off-state voltage Exponential waveform;
gate open circuit
VD = 400 V; Tj = 95 °C
Critical rate of rise of change dIcom/dt = 5.4 A/ms; IT = 12
dVCOM/dt - 20 - V/µs
commutatating current A
gate open circuit
ITM = 16 A; VD = VDRMmax
tgt Gate controlled turn-on time - 2 - µs
IG = 0.1 A; dIG/dt = 5 A/µs
BT138 Series
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26/09/2012 COMSET SEMICONDUCTORS 3|3