Electronics I

Model Exit Exam(phase2a)

1. When the outermost orbit of an atom has exactly 4 valence electrons, the material is
generally
a. a metal c. a semiconductor
b. a non-metal d. an insulator
2. The speed of electrons in vacuum is .............. than in a conductor.
a. less c. much less
b. much more d. none of the above
3. Which of the following is quantized according to Bohr’s theory of atom ?
a. linear momentum of electron c. angular momentum of
b. linear velocity of electron electron
d. angular velocity of electron
4. The electrons in the conduction band are known as ........
a. bound electrons c. free electrons
b. valence electrons d. none of the above
5. In a semiconductor, the energy gap between valence and conduction bands is about ........
a. 15 eV c. 0 eV
b. 100 eV d. 1 eV
6. A semiconductor has generally ........ valence electrons.
a. 2 c. 6
b. 3 d. 4
7. When a trivalent impurity is added to a pure semiconductor, it becomes ........
a. an insulator c. p-type semiconductor
b. an intrinsic semiconductor d. n-type semiconductor
8. In a semiconductor, current conduction is due ........
a. only to holes c. to holes and free electrons
b. only to free electrons d. none of the above

9. An n-type semiconductor is ........

 a. positively charged c. electrically neutral
b. negatively charged d. none of the above
10. The intrinsic carrier concentration, ni, of silicon at room temperature is approximately:
a. 1020/cm3 c. 1015/cm3
b. 1010/cm3 d. 105/cm3
11. . In an intrinsic semiconductor, the number of free electrons ........
a. equals the number of holes c. is less than the number of holes
b. is greater than the number of d. none of the above
holes
12. If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ........ biased
a. forward c. can not be determined
b. reverse d. none of the above
13. If the temperature of a crystal diode increases, then leakage current ........
a. remains the same c. increases
b. decreases d. becomes zero
14. A crystal diode is a ........ device.
a. non-linear c. linear
b. bilateral d. none of the above
15. The capacitance of a varactor diode increases when reverse voltage across it
a. decreases c. breaks down
b. increases d. stores charge

16. The reverse current in a diode is of the order of ........

a. A c. mA
b. kA d. μA

17. The leakage current in a diode is due to ........

a. junction capacitance c. majority carriers
b. minority carriers d. none of the above
18. If the a.c. input to a half-wave rectifier has an r.m.s. value of 400⁄√2 volts, then diode
PIV rating is ........
 a. 400⁄√2V c. 400 V

b. 400 × √2 V d. none of the above

19. The number of depletion layers in a BJT transistor is ........

a. four c. one
b. three d. two
20. In a transistor, the base current is about ........ of emitter current.
a. 25% c. 35%
b. 20% d. 5%
21. The input impedance of a transistor is ......
a. high c. very high
b. low d. almost zero
22. The value of β for a transistor is generally ........
a. 1 c. between 20 and 500
b. less than 1 d. above 500
23. The phase difference between the input and output voltages of a transistor connected in
common emitter arrangement is ........
a. 0º c. 90º
b. 180º d. 270º
24. Transistor biasing represents ........ conditions.
a. a.c. c. both a.c. and d.c.
b. d.c. d. none of the above
25. An ideal value of stability factor is ........
a. 100 c. more than 200
b. 200 d. 1
26. Figure shows biasing with base resistor method. Determine the collector current IC and
collector-emitter voltage VCE. Neglect small base-emitter voltage. Given that β = 50.
 a. 3mA,14V c. 10mA,10V
b. 1mA,7V d. 5mA,12V

27. In a transistor, ........

a. IB = IC + IE c. IC = IE + IB
b. IE = IC − IB d. IE = IC + IB

28. In a transistor if β = 100 and collector current is 10 mA, then IE is ........

a. 100.1 mA c. 100 mA
b. 110 mA d. none of the above

29. A single stage transistor amplifier contains ............ and associated circuitry.
a. two transistors c. three transistors
b. one transistor d. none of the above
30. When a transistor amplifier is operating, the current in any branch is ........
a. sum of a.c. and d.c. c. d.c. only
b. a.c. only d. difference of a.c. and d.c.
31. If the power and current gains of a transistor amplifier are 16500 and 100 respectively,
then voltage gain is ........
 a. 165 c. 100
b. 165 × 104 d. none of the above

32. A MOSFET uses the electric field of a ....... to control the channel current.
a. capacitor c. generator
b. battery d. none

33. In SPICE nonlinear quiescent point calculation is

a. dc analysis c. transient analysis
b. ac analysis d. None