JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-126 Plastic-Encapsulate Transistors

BD135/137/139 TRANSISTOR (NPN) TO – 126

FEATURES
1. EMITTER
z High Current
z Complement To BD136, BD138 And BD140 2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

Collector-Base Voltage BD135 45
VCBO BD137 60 V
BD139 80
Collector-Emitter Voltage BD135 45
VCEO BD137 60 V
BD139 80
VEBO Emitter-Base Voltage 5 V
IC Collector Current 1.5 A
PC Collector Power Dissipation 1.25 W
RθJA Thermal Resistance From Junction To Ambient 100 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0
BD135 45
V
BD137 60
BD139 80
Collector-emitter sustaining voltage VCEO(SUS)* IC=0.03A,IB=0
BD135 45
V
BD137 60
BD139 80
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 10 μA
hFE(1)* VCE=2V, IC=150mA 40 250
DC current gain hFE(2)* VCE=2V, IC=5mA 25
hFE(3)* VCE=2V, IC=500mA 25
*
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.5 V
*
Base-emitter voltage VBE VCE=2V, IC=500mA 1 V
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK 6 10 16
RANGE 40-100 63-160 100-250

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 Typical Characteristics

Static Characteristic hFE —— IC

0.4 300

COMMON VCE= 2V
EMITTER
Ta=25℃ 250
(A)

hFE
0.3 2mA
o
Ta=100 C
1.8mA
IC

DC CURRENT GAIN
200
1.6mA
COLLECTOR CURRENT

1.4mA
0.2 150
1.2mA o
Ta=25 C
1mA
100
0.8mA
0.1
0.6mA
50
0.4mA

IB=0.2mA
0.0 0
0 2 4 6 8 10 10 100 1000 1500
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)

VBEsat —— IC VCEsat —— IC
350
β=10 β=10

COLLECTOR-EMITTER SATURATION
1000 300

VOLTAGE VCEsat (mV)

BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)

250

800 Ta=25℃ 200

150 Ta=100℃

600
Ta=100℃ 100
Ta=25℃

50

400 0
10 100 1000 1500 10 100 1000 1500

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC——VBE Pc —— Ta
1500 1600
VCE=2V
1000
COLLECTOR POWER DISSIPATION

1400
IC (mA)

1200
Pc (mW)
COLLECTOR CURRENT

1000
o
Ta=100 C Ta=25℃
800
100

600

400

200

10 0
400 600 800 1000 0 25 50 75 100 125 150

BASE-EMITTER VOLTAGE VBE(mV) AMBIENT TEMPERATURE Ta (℃ )

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 TO-126 Package Outline Dimensions

Dimensions In Millimeters Dimensions In Inches

Symbol
Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126

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