INTRODUCTION

Electronic devices often function as switches, controlling the flow of current within circuits.
Understanding their switching characteristics is crucial for designing efficient and reliable
electronic systems.

BASIC PRINCIPLES OF SWITCHING

The switching process involves a device transitioning between two distinct states:
 On State (Conducting State): The device offers minimal resistance to current flow,
allowing a significant current to pass through.
 Off State (Blocking State): The device exhibits high resistance, effectively blocking
current flow.
The transition between these states is not instantaneous but occurs within a finite time. This
transition period is characterized by several key parameters.

SWITCHING PARAMETERS AND FORMULAS

Turn-On Delay Time (td) is a crucial parameter in electronic devices, especially in switching
applications such as transistors or diodes. It represents the time taken for a device to change its
state from off to on after the input signal or control voltage has been applied.
The Turn-On Delay Time (td) can be expressed as the time taken from the application of the
input signal until the device's output reaches a specified percentage (usually 90%) of its final
value. Mathematically, it can be represented as:
td = ton − ta
Where:
 td = Turn-On Delay Time
 ton = Time when the output reaches the specified percentage of its final value (e.g., 90%)
 ta = Time when the input signal is applied

Turn-Off Delay Time (Toff) is another critical parameter in electronic devices, particularly in
switching applications such as transistors or diodes. It represents the time taken for a device to
change its state from on to off after the input signal or control voltage has been removed.
The Turn-Off Delay Time (t_off) can be expressed as the time taken from the removal of the
input signal until the device's output reaches a specified percentage (usually 10% or 90%) of its
initial value. Mathematically, it can be represented as:
toff=td−toff
Where:
 toff = Turn-Off Delay Time
 td = Time when the output reaches the specified percentage of its initial value (e.g., 10%
or 90%)
 toff = Time when the input signal is removed

Rise time is defined as the time taken for a signal to cross from a specified low value to a
specified high value. In analog and digital electronics, the specified lower value and specified
higher value are 10% and 90% of the final or steady-state value. So the rise time is typically
defined as how long it takes for a signal to go from 10% to 90% of its final value.
The rise time is an essential parameter in analog and digital systems. It describes the time taken
for the output to rise from one level to another in an analog system, which has many real-world
implications. The rise time tells us how long a signal spends in the intermediate state between
two valid logic levels in a digital system.

Rise time (tr) can be mathematically defined as the time taken for the signal to transition between
specified percentage points, typically from 10% to 90% of its final value. It can be represented
as:
tr=t90%−t10%
Where:
 tr = Rise Time
 t90% = Time when the signal reaches 90% of its final value
 t10% = Time when the signal reaches 10% of its final value
Fall time (pulse decay time) is the time taken for the amplitude of a pulse to decrease (fall)
from a specified value (usually 90% of the peak value exclusive of overshoot or undershoot) to
another specified value (usually 10% of the maximum value exclusive of overshoot or
undershoot).

Drain-source breakdown voltage: The drain-source breakdown voltage of a MOSFET is the

maximum voltage that can be applied between the drain and source terminals without causing
damage to the it. It is also known as as the drain-source avalanche voltage. This voltage value is
specified by the manufacturer and is dependent on the MOSFET's technology, design, and
operating conditions such as temperature and current.

Drain cutoff current also known as drain-to-source leakage current, is a small amount of
current that flows between the drain and the source of a field-effect transistor (FET) when the
transistor is in the cutoff region. This leakage current occurs when the gate-to-source voltage is
below the threshold voltage. It is typically in the order of nanoamperes or smaller and is caused
by various factors such as channel imperfections, oxide defects, and manufacturing variations.
Minimizing drain cutoff current is important in low-power applications to conserve energy and
ensure longer battery life. Additionally, it's crucial for maintaining accurate current control and
preventing unintended operation in high-impedance circuits.

The gate-to-source threshold voltage (Vth) is the minimum voltage required to activate a
MOSFET, initiating significant channel conduction between the source and the drain terminals.
It determines the transistor's turn-on behavior and operating region, influencing circuit
performance. Vth varies due to factors like process variations and temperature changes,
impacting device reliability and circuit design.
Drain-source on-resistance RDS(on) is the resistance between the drain and the source of a
MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on
state. As the VGS increases, the on-resistance generally decreases. The measurement is made in
the ohmic (i.e. linear) region of the device. Generally speaking, the lower the MOSFET on-
resistance, the better.

Gate Charge (Qg): The Gate Charge (Qg) characterizes the energy required to charge or
discharge the gate-emitter capacitance (Cge) of an IGBT. It includes both the charge required to
turn the IGBT on (charging the gate) and the charge required to turn it off (discharging the gate).
The magnitude of Qg directly affects the switching time and power dissipation during IGBT
operation.
Input Charge (Qge): The Input Charge (Qge) represents the energy required to charge or
discharge the input capacitance (Cies) of the IGBT. It primarily relates to the energy exchange
between the gate-emitter capacitance (Cge) and the input capacitance (Cies) during switching
transitions. Qge affects the gate drive circuitry and the control signals required for proper IGBT
operation.
Output Charge (Qgc): The Output Charge (Qgc) characterizes the energy exchange between the
output capacitance (Coes) and the gate-emitter capacitance (Cge) during switching transitions. It
represents the charge required to control the output current and voltage behavior of the IGBT.
Qgc influences the power dissipation and switching losses of the device.
Continuous Drain Current (ID) is the maximum amount of current that can be safely passed
through the drain terminal of a MOSFET without causing damage to the it. It is a measure of the
MOSFET's maximum current handling capability and is important to ensure that the actual
operating conditions do not exceed the MOSFET's specified limits to avoid damage and ensure
reliable operation.