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An Overview and Comparison of On Board Chargers Topologies
An Overview and Comparison of On Board Chargers Topologies
Davide GIACOMINI
Principal, Automotive HVICs
Level 2: Level 3:
3.5kW < Power < 10kW 10kW < Power < 25kW
7h < Charge Time < 2.5h 2.5h < Charge Time < 1h
http://avt.inl.gov/pdf/phev/phevInfrastructureReport08.pdf
2017-05-11 Copyright © Infineon Technologies AG 2017. All rights reserved. 2
Level 1 AC/DC Onboard Charger
Each Electrical Vehicle has an Onboard charger :
• The output power is between 1.5kW and 3.5kW
• AC input : 16A @ 110V/240V → 2.2kW/3.8kW
• DC Output: 200 - 450V
ONBOARD CHARGER
110V - 240V
200V - 450V
+
High Voltage
- Battery
AC SOURCE
HVD
+
• PFC + DC-DC 400V
µP
Output
diodes Out Filter
HV Semiconductor
chipset
HVD PFC
• HV MOSFET or ultra
Fast IGBT
• EASY modules
• Fast gate driver IC
• HV Diodes
2ph • SiC Mosfets
110V/220V Input
AC input In Filter diodes
SiC or
FRED
diode
SiC or FRED
diodes
CoolMos
CFDA
CoolMos
CFDA Isolated from GND
uP controller
REF: “Circuit topologies for PWM boost rectifiers operated from 1ph ad 3ph AC supplies and using either single or split
dc rail voltage outputs”, J. C: Salmon; IEEE TRANSACTIONS ON POWER ELECTRONICS, 1995
«Performance Evaluation of Bridgeless PFC Boost Rectifiers», Laszlo Huber, Yungtaek Jang and Milan M. Jovanovic;
IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 23, NO. 3, MAY 2008
REF: “An Automotive On-Board 3.3 kW Battery Charger for PHEV Application”, Deepak Gautam, Fariborz Musavi,
Murray Edington, Wilson Eberle, William G. Dunford; VEHICLE POWER AND PROPULSION CONFERENCE (VPPC),
2011 IEEE
Compared to Conventional boost PFC, eliminates 1 diode drop and adds an entire boost stage
REF: «Performance Evaluation of Bridgeless PFC Boost Rectifiers», Laszlo Huber, Yungtaek Jang and Milan M. Jovanovic;
IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 23, NO. 3, MAY 2008
2017-05-11 Copyright © Infineon Technologies AG 2017. All rights reserved. 8
PFC stage:
Totem Pole PFC
› Requires HV switches with good body diode
› Uses only 2 diodes and 2 switches
› S1, S2: cannot be Superjunction, use SiC or GaN
› D1, D2: slow speed low Fwd diodes => eliminates SiC need
Can achieve > 98% efficiency
VPFC
D1 and D2 work on semi
sinusoids, can be replaced by SJ
Mosfets
D2
S2 Only one input diode in conduction
at all times
• 50% losses on input diodes vs.
bridge configuration
Cb RL
CCM mode of operation
REF: «Design of GaN-Based MHz Totem-Pole PFC Rectifier», Zhengyang Liu, Fred C. Lee, Qiang Li;
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, VOL. 4, NO. 3, SEPTEMBER 2016
VPFC
Can achieve > 98% efficiency
Most complex solution.
S1 S3
REF: «Evaluation of a non-isolated charger», Robert Nystrom, Yuxuan He; Department of Energy and Environment
Division of Electric Power Engineering, CHALMERS UNIVERSITY OF TECHNOLOGY, GOTHENBURG, SWEDEN 2012
Power
Boost Inductor
Boost Inductor
REF: «Grid-Connected Integrated Battery Chargers in Vehicle Applications: Review and New Solution», Saeid Haghbin, Sonja
Lundmark, Mats Alaküla, and Ola Carlson; IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 60, NO. 2, FEB. 2013
«Review of Battery Charger Topologies, Charging Power Levels, and Infrastructure for Plug-In Electric and Hybrid Vehicles»,
Murat Yilmaz and Philip T. Krein; IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 5, MAY 2013
2017-05-11 Copyright © Infineon Technologies AG 2017. All rights reserved. 11
Conventional PFC losses in OBC
PFC stage power loss breakdown
Output
32,5%
› In a standard boost PFC the input stage is still today using diodes since:
› No need for control signal;
› HV mosfets so far didn’t have a low enough Rds-on vs price to become competitive
versus diodes. Now the use of new generation technologies or new material allows
this.
Power dissipated in the input bridge is high compared to the global balance;
Vbus
PWM control needs dead time
Lo adjustment with load and Vbus
Vbatt changes
Synchronous rectification at
secondary would require
D3 D4 recontruction signal from primary
diagonals controls.
Output
50,1%
uP
controller
SR PWM Optoisolation Gate Driver
generation
SR Gate Signal
AUIRS1170S replaces:
Gate Driver › 1 current sensing IC
Signal Conditioning
› Some SW development in uP
› 1 opto
› 1 Gate driver
REF: «3 kW dual-phase LLC demo board Using 600 V CoolMOS™ P7 and digital control by XMC4400» AN_201703, INFINEON, MARCH 2017
2017-05-11 Copyright © Infineon Technologies AG 2017. All rights reserved. 17
Self controlled, 600V active bridge scheme
Vout
Iout =>
Iin =>
Vinp
Vinm
Output
Vd1 Vd2
Vd1 Vd2
Vinp-Vinm
Iout
Iin
Iin= sin. current gen. 4Apeak @ 85kHz, Vout = 500V, Rload = 200W, Cout=100ouF, Pout= 1250W
Gate voltages accurately track the input current, a slight delay (600ns) is visible at turn-on
• No heatsink needed!
• At 8A – 380V output (3kW), Tcase = 45C
• Picture of the HV DC/DC LLC converter
(only 20C above Ta)
prototype, obtained by reworking a 400V-12V
• Saves about 16W power => diodes would demoboard, replacing the transformer and
need at least a <5C/W heat sink to run the output stage, to deliver 380V output
at Ta=100C
• Efficiency gain at 3kW is only 0,5%,
(limited by slow body diodes recovery),
still saves money on cooling solution!!!
Vprim Vprim
Vout
Iout
Vprim Vprim
› New topologies are enabled and give a significant benefit by using Wide Bandgap
switches, SiC and GaN;
› Input and output diodes represent a large portion of total losses, due to their
high forward dropout, in both PFC and DC/DC stages:
– In a standard boost PFC, around 33% of total power losses are in the input
bridge diodes;
– In a HV-DC/DC converter, around 45-50% power losses are in the output
Ultrafast Diodes rectification;
› Slow body diodes of most very low RDS-on MOSFETs may reduce the Synch-
Rect advantage, use of SiC or GaN switches can avoid this drawback.
› For input bridges the advantage of using synchronous rectification is much more
evident since the lower operating frequency.