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Band Gap Edited
Band Gap Edited
Apparatus:
1. Probes Arrangement :-
It has four individually spring loaded probes. The probes are collinear and equally spaced. The probes are
mounted in a teflon bush, which ensure a good electrical insulation between the probes. A teflon spacer near
the tips is also provided to keep the probes at equal distance. The whole arrangement is mounted on a suitable
stand and leads are provided for the voltage measurement.
2. Sample :-
3. Oven :-
It is a small oven for the variation of temperature of the crystal from the room temperature to about
200°C (max).
Basic Theory:
Semiconductors are materials whose electronic properties are intermediate between those of metals and
insulators. These characteristics are determined by the structure of the crystal, bonding characteristics,
electronic energy bands, and also by the fact that unlike metals, a semiconductor has both the positive (hole)
and the negative (electron) carriers of electricity whose densities can be controlled by doping the pure
semiconductor with chemical impurities during the crystal growth. In classifying the solids by their electrical
properties, it should be understood that there are two types of materials; the metals and the semiconductors .
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Physics I Laboratory Manual Updated: July, 2018
The highest filled energy band which includes electrons shared in covalent bond or transferred in ionic bonds
in a semiconductor is known as valence band, the energy level corresponding to the bottom of the conduction
band in an intrinsic semiconductor is denoted by as E c the energy gap between the top of the valence band
and the bottom of the conduction Band is known as band gap.
The Band gap of a semiconductor can be found from the working formula:
𝐄𝐠
loge ρ = - loge A
𝟐𝑲𝑻
Where,
V= applied voltage
I = current
A = constant
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Physics I Laboratory Manual Updated: July, 2018
Procedure:
4. Turn on the oven, Record the voltage at an interval of 100C up to at least 1200C.
5. Turn off the light oven. Record the voltages at the same temperatures while temperature is decreasing.
6. Calculate the average voltage at each temperature, Calculate ln ρ. Convert the temperatures into Kelvin scale.
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Physics I Laboratory Manual Updated: July, 2018
Precaution:
Tabulation:
Voltage (V) in mV
No. Resistivity
of Temp. When When Average Temp. T-1 X 10-3 ρ0 (ρ) loge ρ
obs. (T0C) temp. temp. Voltage (K) in K-1 (Ω-cm) (Ω-cm)
Increases decreases (mV)
(mV) (mV)
1 400C
2 500C
3 600C
4 700C
5 800C
6 900C
7 1000C
8 1100C
9 1200C
Graph Plotting:
1. A graph will be plotted between T-1 × 10-3 (k-1) [along x axis] vs. loge ρ [along y axis].
𝐥𝐨𝐠 𝐞 𝛒
Slope = 𝟏
𝑻
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Physics I Laboratory Manual Updated: July, 2018
Calculation:
𝑉
We have equation ρ₀= 2πS .
𝐼
Since the thickness of the crystal is small compared to the probe distance a correction factor for it has
to be applied.
Further as the bottom surface is non-conducting in the present case, for that
ρ₀
ρ= 𝑤
𝐺₇( 𝑠 )
[Where G₇ (𝑊𝑆) = 2𝑆
𝑊
× 𝑙𝑜𝑔𝑒 2 is the correction factor for resistivity]
Eg
loge ρ = - loge A
2𝐾𝑇
𝐥𝐨𝐠 𝐞 𝛒
or, Eg = X 2k
𝐓 −𝟏
Percentage of Error:
(Actual value~ Value obtained in the experiment)
% of error = [ ] ×100%
Actual value
_______
For conductivity:
3. What are the values of band gaps for Silicon and Germanium?
The value of band gap for Silicon = 1.1 eV
The value of band gap for Germanium = 0.7 eV
5. Why we use constant current in four probe method for finding the resistivity of a semiconductor?
The method of measurement of resistance involves current and voltage measurement across it. If current is held
constant, the voltage directly gives value of resistance, and voltmeter can be calibrated for resistance value.
7. What is the advantage of the four probe method over others to find resistivity?
The four point probe is preferable over a two-point probe because the contact and spreading resistances
associated with the two point probe are large and the true resistivity can't be actually separated from the
measured resistivity. In a four point probe, very little contact and spreading resistance is associated with the
voltage probes and hence one can obtain a fairly accurate calculation of the resistivity. Using four
probe eliminates measurement errors due to the probe resistance, the spreading resistance under each probe,
and the contact resistance between each metal probe and semiconductor material.
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Physics I Laboratory Manual Updated: July, 2018