01.

Basic Electronic Engineering

Symbol Name of capacitor
(i) Semiconductor Physics Disc capacitor
1. Consider the following statements in the
context of resistor materials and select the Non-polarized capacitor

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correct option.

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P: Carbon-composite resistors have low capacitor or fixed
inductance and are relatively tolerant of
Variable capacitor

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overload conditions.
Q: Thick film resistors are spray-coated Preset capacitor
whereas thin film resistors are sputtered

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nichrome. 3. Consumer electronics refers to :

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(a) Both P and Q are incorrect (a) Electronic devices designed to be purchased
(b) P is correct, Q is incorrect and used by end users or consumers for daily
and non-commercial/professional purposes.

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(c) Both P and Q are correct
(d) P is incorrect, Q is correct (b) Electronic devices designed for low power
applications.
PGCIL JE-05.05.2023, 8:30AM-10:30AM

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(c) Electronic devices meant for regulating
power supply voltages.

TR (d) Electronic devices meant for capturing and

processing the images.
PGCIL JE-05.05.2023, 8:30AM-10:30AM
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2. Identify the given symbol.

4. A resistor reads following colours from left to
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right: brown, black, red, golden. What is the

value of the resistor?
(a) 100 Ω with plus-or-minus 5% tolerance.
(b) 1 kΩ with plus-or-minus 5% tolerance.
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(c) 100 kΩ with plus-or-minus 5% tolerance.

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(a) Stator (d) 10 kΩ with plus-or-minus 5% tolerance.

(b) Backlash gear PGCIL JE-05.05.2023, 8:30AM-10:30AM
(c) Trimmer capacitor
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(d) Variable capacitor

PGCIL JE-05.05.2023, 8:30AM-10:30AM
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Ans. (c) :

5. In a 4 band colour code of resistor, the third

colour band represents the _____.
(a) Tolerance
(b) Second significant digit
(c) Third significant digit
(d) Multiplier
:
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6. A p-n photodiode is made of a material with a

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band gap of 2 eV. The minimum frequency of 10. The capacitance of a reverse biased P-N
the radiation that can be absorbed by the junction :
material is nearly : (a) Increases as the reverse bias is decreased.

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( )
h = 6.33 ×10 −34 Js,1eV = 1.6 ×10 −19 J : (b) Increases as the reverse bias is increased.
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(a) 1×10 HZ 14
(b) 20×10 HZ (c) Is independent of the reverse bias voltage.

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(d) Depends mainly on the reverse saturation
(c) 5×1014 HZ (d) 10×1014 HZ

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current.
KVS TGT (WE)-13.02.2023, 9:00AM

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7. When a semiconductor is doped with a p-type

impurity, each impurity atom will :
11. Intrinsic carrier concentration of a given
C

(a) Acquire negative charge

semiconductor depends on:
(b) Acquire positive charge
(a) Band gap
(c) Remain electrically neutral
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(b) Temperature
(d) Give away one electron
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(c) Both Band gap and temperature

(d) None of these
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8. Drift current in p-n junction is influenced by :

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(a) Applied voltage

(b) Concentration
(c) Concentration gradient
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(d) None of these

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9. In the energy band diagram of a p-type

semiconductor : 12. In a p-n junction having depletion layer of
(a) The acceptor band is near the conduction band. thickness 10-6 m, the potential difference across
(b) The acceptor band is near the valence band. it is 0.1 V. The electric field is :
(c) The donor band is near the conduction band. (a) 107 V/m (b) 10-6 V/m
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(d) The donor band is near the valence band. (c) 10 V/m (d) 10-5 V/m

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 16. Mobility and conductivity are related by which
of the following equations?
(a) e = nuσ (b) σ = neµ
(c) n = σµ/e (d) µ = σe/n

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13. The region which is depleted of mobile charge
carriers is referred to as :
(a) mobility region

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(b) ohmic region

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(c) space charge region 17. The energy gap between valence band and
(d) saturation region conduction band in insulator is ______.

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(a) 1.5 eV (b) 15 eV
(c) 0.5 eV (d) 0.05 eV

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14. _____is/are added in intrinsic semiconductor

for making extrinsic semiconductor.
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(a) Impurity (b) Electrons

(c) Charge carriers (d) Holes
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18. Semiconductor has a

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(a) Negative Temperature coefficient resistance

(b) Positive Temperature coefficient resistance
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(c) Constant Temperature coefficient of resistance

(d) Zero Temperature coefficient of resistance
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19. N-Type semiconductor is obtained by doping

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silicon with-
(a) Germanium (b) Gallium
(c) Phosphorous (d) Boron

15. _____is a weak electron - electron bound pair

mediated by a phonon interaction.
(a) Electron pair (b) Cooper pair
(c) Ion pair (d) Fermions pair
 20. One eV of energy is equivalent to 26. A photo diode is a ________ biased silicon or
(a) 1.6 × 10–19 Joule germanium p-n junction in which reverse
(c) 2.0 ergs current _______ when the junction is exposed
to light.
(a) forward, increases (b) forward, decreases
(c) reverse, decreases (d) reverse, increases

21. The barrier potential of Si is-

(a) 0.1 V (b) 0.7 V
(c) 0.03 V (d) 0.3 V

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22. The resistance of a semiconductor ____with

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the ____of temperature.
(a) increase, decrease
(b) decrease, remains same 27. Which of the following is semiconductor?

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(c) decrease, remains same (a) Aluminium
(d) decrease, decrease (b) Both Germanium and Silicon

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(c) Silicon
(d) Germanium

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28. The resistivity of pure silicon is ______

(a) 6 × 105Ω cm (b) 8000Ω cm
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(c) 1000Ω cm (d) 1.6 × 10–8Ω cm

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24. The value of zener current is

(a) Determined by zener voltage
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(b) Independent of temperature

(c) Limited by external circuit resistance 29. Varistor is known as:
(d) Independent of circuit resistance (a) Voltage-dependent resistor
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(b) Current dependent resistor

(c) Voltage-dependent diode
(d) Voltage-independent resistor
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25. Avalanche break down is primarily dependent

on the phenomenon of
(a) Collision (b) Doping
(c) Re-combination (d) None of the above
30. In an N-type semiconductor, there are
(a) No minority carrier
(b) Immobile negative ion
(c) Immobile positive ion
⇒ (d) Holes as majority carrier

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 35. What is the name of 'hf' in given equation, it
difference of energy E between the higher
energy stage E2 and the lower energy state E1?
E = E2–E1 = hf

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(a) Gravitation constant

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31. Which of the following statement is false? (b) Planck's constant
(a) Intrinsic semiconductors are better in (c) Attenuation constant
conductivity than extrinsic semiconductor (d) Permittivity

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(b) Intrinsic semiconductors are pure
(c) The conduction relies on temperature in

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intrinsic semi conductor
(d) Extrinsic semiconductors are impure

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32. The turn on voltage on Ge junction diode is 36.
nearly _____volt
(a) 0.7 (b) 0.3
TR ________ acts like a perfect conductor with
zero voltage across it. Similarly, when it is
reversed biased, it acts as a perfect insulator
(c) 1.0 (d) 0.1 with zero current through it.
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(a) Ideal diode
(b) Ideal conductor
(c) Ideal insulator
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(d) Real/Practical diode

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33. The forbidden gap of a Germanium

semiconductor material is
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(a) 0.12 eV (b) 0.72 eV

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(c) 7.20 eV (d) None of these
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Ans. (b) : The forbidden gap of a Germanium

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semiconductor material is 0.72 eV.

34. Which of the following is considering in
variable capacitor?
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(a) Non-polarized capacitor

(b) Polarized capacitor
(c) Trimmer capacitor
(d) Ceramic constant capacitor

37. The band gap energy of Germanium at 300k

is …….
(a) 1.212 eV (b) 0.785eV
(c) 0.718 eV (d) 1.121 eV

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 41. Which of the following statements is true
about the semiconductor material?
(a) A material that offers a very low level of
conductivity.
(b) A material that offers a zero conductivity
38. Which of the following quantities cannot be (c) A material that has conductivity level
measured/ determined using HALL effect? somewhere between insulator and conductor.
1. Type of semiconductor (p or n)
(d) A material that offers a very high level of
2. Band gap conductivity.
3. Diffusion constant

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4. Carrier concentration

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(a) 1& 2 (b) 2& 3
(c) 1& 4 (d) 1& 3

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• and Selenium etc, are
39. Which of the following defines an N-Type
semiconductor?

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42. Which of the following is not one of the effects
(a) A semiconductor with excess of black hole is of rise in temperature on resistance?
called N-type
(a) Decrease in the resistance of pure metals
(b) A semiconductor with excess of holes is
called N-type
(c) A semiconductor with excess of holes is
TR(b) Increase in the resistance of alloys
(c) Decrease in the resistance of electrolytes,
insulators, etc.
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called N-type
(d) A semiconductor with excess of electrons is (d) Increase in the resistance of pure metals
called N-type.
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43. Charge velocity is defined as the:

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(a) Speed with which the effect of EMF is

experienced at all parts of the conductor
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resulting in the flow of current

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(b) Electrons moving at the Fermi speed

(c) Speed with which charge drifts in a
conductor
40. What is the expression of carrier mobility of (d) Holes moving at the Fermi speed
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a semiconductor material? (Where e is

electric field, n is carrier density and σ is
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conductivity.)
σ ne
(a) µ = (b) µ =
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ne σ
1 1
(c) µ = (d) µ =
σ
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 44. Which of the following is NOT a minority
carrier semiconductor device?
(a) Thyristor (b) BJT
(c) IGBT (d) JFET

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45. Which of the following is referred to as 48. Electron Volt and kilojoules are units to
majority carriers in a p-type material? measure energy. Which option below best
describes the conversion factor between the

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(a) Electrons (b) Donor impurities
two units?
(c) Discrete energy (d) Holes
(a) 1.6×1019 kJ (b) 1.6×10–22 kJ

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(c) 1.6×10 kJ (d) 1.6×1022 kJ

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46. The following represents the energy band
diagram for:
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49. In ________, the mechanism of ionisation

occurs because of collision of electrons.
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(a) Avalanche breakdown

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(a) P-type semiconductor (b) Zener breakdown

(b) Intrinsic semiconductor (c) Schottky breakdown
(c) Conductor (d) Reverse breakdown
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(d) Insulator
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Ans. (d) :
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47. In which material, valence electrons are tightly 50. What are the minority carriers in n-type
bounded to their parent atoms? semiconductors
(a) Semiconductor (b) Conductor (a) Positrons (b) Electrons
(c) Insulator (d) Magnetic (c) Holes (d) Protons
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