SCT3017ALHR

Automotive Grade N-channel SiC power MOSFET Datasheet

lOutline
VDSS 650V TO-247N

RDS(on) (Typ.) 17mΩ

ID*1 118A
PD 427W (1) (2)(3)

lInner circuit

lFeatures
(1) Gate
1) Qualified to AEC-Q101 (2) Drain
(3) Source
2) Low on-resistance
3) Fast switching speed *Body Diode

4) Fast reverse recovery

Please note Driver Source and Power Source are
5) Easy to parallel not exchangeable. Their exchange might lead to
malfunction.
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant lPackaging specifications
lApplication Packing Tube

・Automobile Reel size (mm) -

・Switch mode power supplies Tape width (mm) -
Type
Basic ordering unit (pcs) 30
Taping code C11
Marking SCT3017AL

lAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Value Unit
Drain - Source Voltage VDSS 650 V
Tc = 25°C ID *1 118 A
Continuous Drain current
Tc = 100°C ID *1 83 A
Pulsed Drain current ID,pulse *2 295 A
Gate - Source voltage (DC) VGSS -4 to +22 V
*3
Gate - Source surge voltage (tsurge < 300nsec) VGSS_surge -4 to +26 V
Recommended drive voltage VGS_op*4 0 / +18 V
Junction temperature Tj 175 °C
Range of storage temperature Tstg -55 to +175 °C

www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSQ50211-SCT3017ALHR
TSZ22111・14・001 1/12 16.Nov.2018 - Rev.001
 SCT3017ALHR Datasheet

lElectrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = 0V, ID = 1mA
Drain - Source breakdown
V(BR)DSS Tj = 25°C 650 - - V
voltage
Tj = -55°C 650 - -
VGS = 0V, VDS =650V
Zero Gate voltage
IDSS Tj = 25°C - 1 10 μA
Drain current
Tj = 150°C - 2 -
Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 nA
Gate - Source leakage current IGSS- VGS = -4V , VDS = 0V - - -100 nA
Gate threshold voltage VGS (th) VDS = 10V, ID = 23.5mA 2.7 - 5.6 V
VGS = 18V, ID = 47A
Static Drain - Source
RDS(on) *5 Tj = 25°C - 17 22.1 mΩ
on - state resistance
Tj = 150°C - 25 -
Gate input resistance RG f = 1MHz, open drain - 4 - Ω

lThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 0.27 0.35 °C/W

lTypical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
Rth1 6.66E-03 Cth1 1.23E-03
Rth2 1.14E-01 K/W Cth2 1.73E-02 Ws/K
Rth3 1.49E-01 Cth3 4.86E-02

Tj Rth1 Rth,n Tc

PD Cth1 Cth2 Cth,n

Ta

www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSQ50211-SCT3017ALHR
TSZ22111・15・001 2/12 16.Nov.2018 - Rev.001
 SCT3017ALHR Datasheet

lElectrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Transconductance gfs *5 VDS = 10V, ID = 47A - 16 - S
Input capacitance Ciss VGS = 0V - 2884 -
Output capacitance Coss VDS = 500V - 148 - pF
Reverse transfer capacitance Crss f = 1MHz - 65 -

Effective output capacitance, VGS = 0V

Co(er) - 397 - pF
energy related VDS = 0V to 300V
VDS = 300V
Total Gate charge Qg *5 - 172 -
ID = 47A
*5
Gate - Source charge Qgs VGS = 18V - 27 - nC

See Fig. 1-1.

Gate - Drain charge Qgd *5 - 91 -

VDS = 300V
Turn - on delay time td(on) *5 - 30 -
ID = 18A
*5
Rise time tr VGS = 0V/+18V - 44 -
ns
*5 RG = 0Ω
Turn - off delay time td(off) - 64 -
RL = 17Ω
Fall time tf *5 See Fig. 1-1, 1-2. - 31 -

VDS = 300V
Turn - on switching loss Eon *5 VGS=0V/18V, ID = 47A - 369 -
RG = 0Ω, L = 250μH
μJ
Eon includes diode
reverse recovery
Turn - off switching loss Eoff *5 Lσ = 50nH, Cσ = 200pF - 156 -
See Fig. 2-1, 2-2.

www.rohm.com
TSQ50211-SCT3017ALHR
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
3/12 16.Nov.2018 - Rev.001
 SCT3017ALHR Datasheet

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Body diode continuous,
IS *1 - - 118 A
forward current
Tc = 25°C
Body diode direct current,
ISM *2 - - 295 A
pulsed
Forward voltage VSD *5 VGS = 0V, ID = 47A - 3.2 - V
IF = 47A
Reverse recovery time trr *5 - 31 - ns
VR = 300V
*5
Reverse recovery charge Qrr di/dt = 1100A/μs - 206 - nC

Lσ = 50nH, Cσ = 200pF
Peak reverse recovery current Irrm *5 - 13 - A
See Fig. 3-1, 3-2.

*1 Limited by maximum temperature allowed.

*2 PW  10μs, Duty cycle  1%

*3 Example of acceptable VGS waveform

Please note especially when using driver source that VGSS_surge must be in the range of
absolute maximum rating.

*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause
thermal runaway.

*5 Pulsed

www.rohm.com TSQ50211-SCT3017ALHR
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
4/12 16.Nov.2018 - Rev.001
 SCT3017ALHR Datasheet

lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

450 1000 Operation in this area is limited by

RDS(on) PW = 100ns*
400
Power Dissipation : PD [W]

350
100

Drain Current : ID [A]

300
250 PW = 1μs*
10 PW = 10μs*
200 PW = 100μs

150 PW = 1ms
PW = 10ms
100 1
Ta = 25ºC
50 Single Pulse
*Calculation(PW10μs)
0 0.1
25 75 125 175 0.1 1 10 100 1000
Case Temperature : TC [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width
1
Transient Thermal Resistance :

0.1
RthJC [K/W]

0.01

0.001
Ta = 25ºC
Single Pulse
0.0001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1

Pulse Width : PW [s]

www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved. TSQ50211-SCT3017ALHR
TSZ22111・15・001 5/12 16.Nov.2018 - Rev.001
 SCT3017ALHR Datasheet

lElectrical characteristic curves

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

120 20V 60 20V

110 55
18V 18V
100 50 14V
14V 12V
90 16V 45 16V
Drain Current : ID [A]

Drain Current : ID [A]

Ta = 25ºC
80 40 Pulsed
12V
70 35
60 Ta = 25ºC 30
Pulsed 10V
50 25
40 10V 20
30 15
20 10 VGS= 8V
VGS= 8V
10 5
0 0
0 2 4 6 8 10 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.6 Tj = 25ºC 3rd Quadrant Characteristics

0
-10 Ta = 25ºC
Pulsed
-20
-30 VGS = -4V
Drain Current : ID [A]

-40 VGS = -2V

VGS = 0V
-50
VGS = 18V
-60
-70
-80
-90
-100
-110
-120
-10 -8 -6 -4 -2 0

Drain - Source Voltage : VDS [V]

www.rohm.com
TSQ50211-SCT3017ALHR
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
6/12 16.Nov.2018 - Rev.001
 SCT3017ALHR Datasheet

lElectrical characteristic curves

Fig.7 Tj = 150ºC Typical Output Fig.8 Tj = 150ºC Typical Output

Characteristics(I) Characteristics(II)
120 60
110 20V 20V
55 14V
100 18V 50 18V 10V
14V 12V
90 16V 45 16V
Drain Current : ID [A]

Drain Current : ID [A]

80 10V 40
12V
70 35
60 30
VGS= 8V
50 25
40 20
VGS= 8V
30 15
20 10 Ta = 150ºC
Ta = 150ºC Pulsed
10 Pulsed 5
0 0
0 2 4 6 8 10 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.10 Body Diode Forward Voltage

Fig.9 Tj = 150ºC 3rd Quadrant Characteristics
vs. Gate - Source Voltage
0 6
Ta = 150ºC
Body Diode Forward Voltage : VSD [V]

-10 ID=47A
Pulsed
-20 5
-30 VGS = -4V
Drain Current : ID [A]

VGS = -2V
-40 VGS = 0V 4
-50 VGS = 18V
-60 3
-70
-80 2
Ta= 150ºC
-90
-100 1
-110 Ta= 25ºC
-120 0
-10 -8 -6 -4 -2 0 -4 0 4 8 12 16 20
Drain - Source Voltage : VDS [V] Gate - Source Voltage : VGS [V]

www.rohm.com
TSQ50211-SCT3017ALHR
© 2018 ROHM Co., Ltd. All rights reserved.
7/12 16.Nov.2018 - Rev.001
TSZ22111・15・001
 SCT3017ALHR Datasheet

lElectrical characteristic curves

Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II)

100 120
VDS = 10V 110 VDS = 10V
Pulsed
100 Pulsed
10 90
Drain Current : ID [A]

Drain Current : ID [A]

Ta= 150ºC 80
Ta= 75ºC 70
Ta= 25ºC Ta= 150ºC
1 Ta= -25ºC 60 Ta= 75ºC
50 Ta= 25ºC
Ta= -25ºC
40
0.1 30
20
10
0.01 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

Fig.13 Gate Threshold Voltage

Fig.14 Transconductance vs. Drain Current
vs. Junction Temperature
6 10
VDS = 10V
Gate Threshold Voltage : V GS(th) [V]

VDS = 10V
5 ID = 23.5mA Pulsed
Transconductance : gfs [S]

3 1
Ta = 150ºC
Ta = 75ºC
2 Ta = 25ºC
Ta = -25ºC

0 0.1
-50 0 50 100 150 200 0.1 1 10
Junction Temperature : Tj [ºC] Drain Current : ID [A]

www.rohm.com
TSQ50211-SCT3017ALHR
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
8/12 16.Nov.2018 - Rev.001
 SCT3017ALHR Datasheet

lElectrical characteristic curves

Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature
0.09 0.04
Ta = 25ºC VGS = 18V
0.08 Pulsed Pulsed
Static Drain - Source On-State

Static Drain - Source On-State

0.07 ID= 79A
Resistance : RDS(on) [Ω]

Resistance : RDS(on) [Ω]

0.03
ID= 79A
0.06 ID= 47A

0.05
ID= 47A 0.02
0.04 ID= -47A

0.03

0.02 0.01
ID= -47A
0.01

0.00 0.00
8 10 12 14 16 18 20 22 -50 0 50 100 150 200
Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

Fig.17 Static Drain - Source On - State Fig.18 Normalized Drain - Source Breakdown
Resistance vs. Drain Current Voltage vs. Junction Temperature
0.1 1.04
Static Drain - Source On-State

1.03
Normalized Drain - Source
Resistance : RDS(on) [Ω]

Breakdown Voltage

Ta = 150ºC 1.02
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC 1.01
Ta = -25ºC

1.00

0.99
VGS = 18V
Pulsed
0.01 0.98
1 10 100 -50 0 50 100 150 200
Drain Current : ID [A] Junction Temperature : Tj [ºC]

www.rohm.com
TSQ50211-SCT3017ALHR
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 9/12 16.Nov.2018 - Rev.001
 SCT3017ALHR Datasheet

lElectrical characteristic curves

Fig.19 Typical Capacitance

Fig.20 Coss Stored Energy
vs. Drain - Source Voltage
10000 30
Ciss Ta = 25ºC

Coss Stored Energy : EOSS [µJ]

25
1000
Coss
Capacitance : C [pF]

20

100 Crss 15

10
10
Ta = 25ºC
5
f = 1MHz
VGS = 0V
1 0
0.1 1 10 100 1000 0 100 200 300 400

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.21 Dynamic Input Characteristics

*Gate Charge Waveform
20
Ta = 25ºC
Gate - Source Voltage : VGS [V]

VDD = 300V
ID = 47A
15 Pulsed

10

0
0 20 40 60 80 100 120 140 160 180

Total Gate Charge : Qg [nC]

www.rohm.com TSQ50211-SCT3017ALHR
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
10/12 16.Nov.2018 - Rev.001
 SCT3017ALHR Datasheet

lElectrical characteristic curves

Fig.19 Typical Switching Time Fig.20 Typical Switching Loss

vs. Drain Current vs. Drain - Source Voltage
10000 600
Ta = 25°C Ta = 25°C
ID = 47A
VDD= 300V
500 VGS= +18V/0V
VGS= +18V/0V

Switching Energy : E [µJ]

tf RG = 0Ω
1000
Switching Time : t [ns]

RG = 0Ω L= 250μH Eon
400

100 td(off) 300

tr
200
td(on)
10 Eoff
100

1 0
0.1 1 10 100 100 200 300 400 500
Drain Current : ID [A] Drain - Source Voltage : VDS [V]

Fig.21 Typical Switching Loss Fig.22 Typical Switching Loss

vs. Drain Current vs. External Gate Resistance
3000 2000
Ta = 25°C Ta = 25°C
VDD= 300V ID = 47A
2500 VGS= +18V/0V VDD= 300V
VGS= +18V/0V
Switching Energy : E [µJ]

Switching Energy : E [µJ]

RG = 0Ω 1500 Eon
L= 250μH L= 250μH
2000

Eoff
1500 1000
Eon
1000
500
500 Eoff

0 0
0 20 40 60 80 100 120 0 5 10 15 20 25 30
Drain Current : ID [A] External Gate Resistance : RG [Ω]

www.rohm.com
TSQ50211-SCT3017ALHR
© 2018 ROHM Co., Ltd. All rights reserved. 11/12
TSZ22111・15・001 16.Nov.2018 - Rev.001
SCT3017ALHR
Datasheet

lMeasurement circuits and waveforms

Fig.1-1 Gate Charge and Switching Time Measurement Circuit Fig.1-2 Waveforms for Switching Time

Fig.2-1 Switching Energy Measurement Circuit Fig.2-2 Waveforms for Switching Energy Loss
Eon = ID ∙ VDS dt Eoff = ID ∙ VDS dt

Irr Vsurge
VDS

ID

Fig.3-1 Reverse Recovery Time Measurement Circuit Fig.3-2 Reverse Recovery Waveform

www.rohm.com
TSQ50211-SCT3017ALHR
© 2018 ROHM Co., Ltd. All rights reserved.
12/12 16.Nov.2018 - Rev.001
TSZ22111・15・001
 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
R1107 S
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

ROHM Semiconductor:
SCT3017ALHRC11