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NEET PHYSICS:

ONE PAGE NOTES


Modern Physics

Aayush
Content

Dual nature
Atoms
Nuclei
Semiconductor
Logic gates

Quality Speaks NEET UG


Electron emmision - Emmision of electronds from the surface of metal

Thermoionic emission - Photoelectric emisson -


Field emmision - Emission of Emmission of free electrons
Emmision of electrons by electrons by applying a very from the surface of metals
suitably heating of metal strong electric field to metal. when light radiation of suitable
surface. frequency fall on it.

Threshold frequency – 𝜈0 Threshold wavelength – 𝜆0


Minimum frequency of incident radiation to The maximum wavelength that the incident
eject the electrons. For photoemission radiation must have so that the photoelectric
effect takes place.
𝜈𝑖𝑛𝑐𝑖𝑑𝑒𝑛𝑡 ≥ 𝜈0

Work function – 𝝓𝟎 (property of metal) Photon – Tiny packets of light energy,

Minimum energy required to just escape Energy of photon = 𝐸 = ℎ𝜈


electron from metal surface.
Mass of photon – Rest mass of photon is zero, but
ℎ𝑐 it has kinetic non zero mass
𝜙0 = ℎ𝜈0 =
𝜆0

Einstein’s photoelectric equation – Stopping potential – 12400


𝐸𝑖𝑛𝑐𝑖𝑑𝑒𝑛𝑡 =
𝜆(Å)
𝐾𝐸𝑚𝑎𝑥 = 𝐸 − 𝜙 = 𝐸 − ℎ𝜈0 𝐾𝐸𝑚𝑎𝑥 = 𝑒𝑉0
𝐾𝐸𝑚𝑎𝑥 = ℎ𝜈 − ℎ𝜈0 No. of emitted
Maximum Velocity of electron
photon –
ℎ𝑐 ℎ𝑐 1 1
𝐾𝐸𝑚𝑎𝑥 = − = ℎ𝑐 [ − ] 2ℎ(𝜈 − 𝜈0 ) 𝑃 𝑃 𝑃𝜆
𝜆 𝜆0 𝜆 𝜆0 𝑣𝑚𝑎𝑥 = √ 𝑛= = =
𝑚 𝐸 ℎ𝜈 ℎ𝑐

Intensity of light – (P = radiating power) No. of photons falling per second – (P = Power)
𝐸 𝑃 𝑃 𝑃
𝐼= = = 𝑛=
𝐴𝑡 𝐴 4𝜋𝑟 2 𝐸

Effect of intensity on photocurrent – Effect of Potential on photocurrent –

photocurrent ∝ intensity photocurrent ∝ Potential

Stopping potential – Photoelectric current becomes zero at a particular value of negative


potential 𝑉0 is called stopping potential. It varies linearly with the frequency of incident radiation

Photocell – It converts the optical De – Broglie wavelength – 12.27


𝜆𝑒𝑙𝑒𝑐𝑡𝑟𝑜𝑛 = Å
energy into the electrical energy √𝑉
ℎ ℎ ℎ
𝜆= = = 0.202
𝑝 𝑚𝑣 √2𝑚𝐾𝐸
𝜆𝑝𝑟𝑜𝑡𝑜𝑛 = Å
√𝑉

8
Atoms - Consists of elementary particle electrons, protons and neutrons

rutherford nuclear model - JJ Thomson model atom - Bohr model of hydrogen -


Entire positive charge and First model of atom plum Electrons can revolve only
most of the mass of the pudding model positive charge in those orbits in which
atom is concentrated in is uniformly distributed and angular momentum about
nucleusand electrons negatively charged electrons are the nucleus is
revolving around the embeded in it like seeds in a ℎ
nucleus. watermelon 𝑚𝑣𝑟 = 𝑛
2𝜋

According to Bohr’s model the electron revolves round Distance of closest approach –
the nucleus in circular orbits and for this, necessary 𝑍𝑒 2
centripetal force is provided by electrostatic attraction 𝒓𝟎 =
𝑚𝑣 2 4𝜋𝜖0
between nucleus and electrons
Radius of nth orbit –
𝑚𝑣 2 1 𝑍𝑒 ⋅ 𝑒
= ⋅ 2 𝑛 2 ℎ2 𝑛2
𝑟 4𝜋 ∈0 𝑟 𝑟𝑛 = = 0.53 Å
4𝜋 2 𝐾𝑍𝑒 2 𝑚 𝑍
Speed of electron in nth orbit – Potential energy in nth orbit – Kinetic energy in nth orbit –
2𝜋𝐾𝑍𝑒 2 𝑍 𝐾𝑍𝑒 2 𝑍2 𝐾𝑍𝑒 2 𝑍2
𝑣𝑛 = = 2.2 × 106 𝑚/𝑠 𝑈𝑛 = − = −27.2 2 𝑒𝑉 𝐸𝑛 = = 13.6 2 𝑒𝑉
𝑛ℎ 𝑛 𝑟𝑛 𝑛 2𝑟𝑛 𝑛

No. of 𝜶 particles scattered per unit area – Impact parameter –


1 𝜃
𝑁∝ 𝐾𝑍𝑒 2 cot (2 )
𝜃 𝑏=
sin4 (2 ) 𝐾𝐸

Transition of electron – According to Bohr’s theory, the energy of the atom has a definite value
in a given stationary orbit. When an atom absorbs energy, electron jumps from higher to lower
orbit. When electron jumps from higher to lower or lower to higher, it emits or absorbs a
photon. The difference in energies of two orbits is equal to energy of photon.
1 1
∆𝐸 = 13.6𝑍 2 ( 2 − 2)
𝑛1 𝑛2

Wavelength of emitted radiation Frequency of emitted radiation Wave number –


1 1 1 ∆𝐸 1 1 1
= 𝑅 [ 2 − 2] 𝜈= = 𝑅𝑐𝑍 2 ( 2 − 2 ) 𝜈̅ =
𝜆 𝑛1 𝑛2 ℎ 𝑛1 𝑛2 𝜆

Number of spectral lines – if electron falls from orbit If electrons falls from nth orbit to ground
𝑛2 to 𝑛1 then the number of spectral lines emitted state, then number of spectral lines
(𝑛2 − 𝑛1 + 1)(𝑛2 − 𝑛1 ) 𝑛(𝑛 − 1)
𝑁= 𝑁=
2 2
Excitation Energy – Ionisation Energy - The minimum energy needed to
ionise an atom (i.e. to remove electron completely
The energy needed to take atom from
from bounded state) is called ionisation energy and
its lower state to higher state is called
the corresponding potential as ionisation potential.
excitation energy.

Binding Energy – The energy needed to separate the constituents of system (nucleus +electron)
to large distance. The binding energy of hydrogen atom in ground state is 13.6 𝑒𝑉.
Absorption and Emission Spectrum - An atom can be excited by incident photon or by collision.
When an atom absorbs a photon it goes to higher orbits/state and remains there for a time 10−8
sec, then it returns to ground state in various ways i.e. by emitting photons. Generally, atom
remains in ground state.

Spectral series Transition  max  min 𝝀𝒎𝒂𝒙 Region


𝝀𝒎𝒊𝒏
1. Lymen series n2 = 2, 3, 4 … 4 1 4 Ultraviolet region
n1 = 1 3𝑅 𝑅 3
2.Balmer series n2 = 3, 4, 5 … 36 4 9 Visible region
n1 = 2 5𝑅 𝑅 5
3. Paschen series n2 = 4, 5, 6 … 144 9 16 Infrared region
n1 = 3 7𝑅 𝑅 7
4. Bracket series n2 = 5, 6, 7 …  400 16 25 Infrared region
n1 = 4 9𝑅 𝑅 9
5. Pfund series n2 = 6, 7, 8 …  900 25 36 Infrared region
n1 = 5 11𝑅 𝑅 11

NOTE – First line of series is called as 𝐻𝛼 , second line is called as 𝐻𝛽 and so on.
For Lyman series 𝐻𝛼 means 𝑛1 = 1 and 𝑛2 = 1 + 1 = 2. For Balmer series 𝐻𝛼 means
𝑛1 = 2 and 𝑛2 = 2 + 1 = 3. For Balmer series 𝐻𝛽 means 𝑛1 = 2 and 𝑛2 = 2 + 2 = 4
ATOMIC MASS UNIT –

Atomic mass unit (u), defined as 1/12th of the mass of the carbon ( 126𝐶 ) atom. It is also called as amu.

mass of one 126C atom 1.992647 × 10−26 kg


1 amu = = = 1.660539 × 10−27 kg = 931 𝑀𝑒𝑉
12 12

Isotopes : The nuclei having Isotones : The nuclei having Isobars: The nuclei having
same number of protons but same number of neutrons different atomic number but
different number of neutrons but different number of same value of mass number.
12 14 protons 14 14
6𝐶 , 6𝐶 𝑎𝑟𝑒 𝑖𝑠𝑜𝑡𝑜𝑝𝑒𝑠 𝑜𝑓 𝑐𝑎𝑟𝑏𝑜𝑛. 6𝐶 & 7𝑁 𝑎𝑟𝑒 𝑖𝑠𝑜𝑏𝑎𝑟𝑠
14 16
6𝐶 , 8𝑂 𝑎𝑟𝑒 𝑖𝑠𝑜𝑡𝑜𝑛𝑒𝑠.

Radius on nucleus: Assuming nucleus Nuclear density: Nucleus:


as a sphere, its radius R depends on 𝐴
mass 𝑍𝑋
mass number A and is given by Density = A = atomic mass
𝑅 ∝ 𝐴1/3 volume
𝐴 =𝑃+𝑁
𝑀 𝑚𝐴 𝑚𝐴 𝑚
𝑅 = 𝑅0 𝐴1/3 𝜌= = = = 𝑍 = Protons
𝑣 4 4 4
𝜋𝑅 3 𝜋𝑅 3 𝐴 𝜋𝑅 3
Where 𝑅0 = 1.2 × 10−15 𝑚 3 3 0 3 0

Mass – Energy – Einstein gave the famous Nuclear binding energy –


mass-energy equivalence relation
𝐸𝑏 = ∆𝑀𝑐 2
𝐸 = 𝑚𝑐 2
Mass defect – The difference in mass of a nucleus and
Here c is the velocity of light in vacuum and its constituents, ∆M, is called the mass defect, and is
is approximately equal to 3 × 108 𝑚/𝑠. given by Δ𝑀 = [𝑍𝑚𝑝 + (𝐴 − 𝑍)𝑚𝑛] − 𝑀

NUCLEAR FORCE – The force that binds protons and neutrons together in the nucleus, despite the
electrical repulsion of the protons is called the nuclear force. Nuclear forces are independent of
charge. The nuclear force between two protons is same as that between proton and neutrons or
between to neutrons. 𝐹𝑝𝑝 = 𝐹𝑛𝑛 = 𝐹𝑝𝑛

RADIOACTIVITY – disintegration of heavy elements into comparatively lighter by emmision of 𝛼, 𝛽 and 𝛾


radiation

α-decay in which a helium β-decay in which electrons or γ-decay in which high energy
nucleus is emitted positrons are emitted photons are emitted

Rate of decay – No. of undecayed Half-life – Mean life –


𝑑𝑁 𝑑𝑁
atoms at any instant 𝑇1/2
0.693 ln 2 1
(− )∝𝑁⇒− = 𝜆𝑁 𝑇1/2 = = 𝜏= = = 1.44𝑇1/2
𝑑𝑡 𝑑𝑡 𝑁 = 𝑁0 𝑒 −𝜆𝑡 𝜆 𝜆 𝜆 0.693

Activity of radioactive element – Activity after time t – No. of undecayed atoms at time t –
𝑑𝑁 𝐴 = 𝐴0 𝑒 −𝜆𝑡 1 𝑛 𝑡
𝐴 = (− ) = 𝜆𝑁 = 𝜆𝑁0 𝑒 −𝜆𝑡 𝑁 = 𝑁0 ( ) , 𝑤ℎ𝑒𝑟𝑒 𝑛 =
𝑑𝑡 2 𝑇1/2
Nuclear Fission – Splitting of a heavy nucleus into two or more lighter nuclei
235
92𝑈 + 10𝑛 → 236 ∗
92𝑈 → 144 89 1
56𝐵𝑎 + 36𝐾𝑟 + 3 0𝑛 + 𝐸𝑛𝑒𝑟𝑔𝑦

Atom bomb works on the principle of nuclear fission

Nuclear Fusion – combining two lighter nuclei to form one heavy nucleus.
1
1𝐻 + 11𝐻 → 21𝐻 + +10𝑒 + 𝜐 + 0.42 𝑀𝑒𝑉

Hydrogen bomb works on the principle of nuclear fusion

Moderator – it is used to Coolant – It removes the heat Control rods – Absorb neutrons.
slow down the fast moving of reaction.
Ex – boron, cadmium etc
neutrons
Ex – Cold water, liquid oxygen
Ex – heavy water, graphite
CLASSIFICATION OF METALS

Conductors: They
possess very low Semiconductors: They have resistivity
resistivity (or high Insulators: They have or conductivity intermediate to
conductivity). high resistivity (or low metals and insulators.
𝜌 ~ 10−2 – 10–8 Ω 𝑚 conductivity). 𝜌 ~ 10–5 – 106 Ω 𝑚
𝜌~ 1011 – 1019 Ω𝑚 𝜎 ~ 105 – 10–6 𝑆 𝑚 –1
𝜎 ~ 102 – 108 𝑆 𝑚 –1

Classification of Semiconductors – Energy bands – Inside the


crystal each electron has a
(I) Elemental semiconductors: Si and Ge
unique position and no two
(II) Compound semiconductors: Examples are: electrons see exactly the same
pattern of surrounding charges.
 Inorganic: CdS, GaAs, CdSe, InP, etc.
Because of this, each electron
 Organic: anthracene, doped pthalocyanines, etc.
will have a different energy level
 Organic polymers: polypyrrole, polyaniline, polythiophene
called energy bands.

Insulators –
Energy gap is more than
3eV

Semiconductors –

Energy gap is about 1 eV

Conductors –
There is no energy gap,

Intrinsic semiconductor – Intrinsic semiconductor –


A semiconductor which is available in their A semiconductor which is available in their
pure most form are called as intrinsic pure most form are called as intrinsic
semiconductors. In an intrinsic semiconductors. In an intrinsic semiconductor,
semiconductor, the number of free electrons the number of free electrons and holes are
and holes are equal. equal.

Doping - The process of addition of a very small amount of impurity into an intrinsic
semiconductor is called doping. The impurity atoms are called dopants. The semiconductor
containing impurity atoms is known as impure or doped or extrinsic semiconductor.

(i) Pentavalent (valency 5): like Phosphorous (P), Arsenic (As), Antimony (Sb) etc.
(ii) Trivalent (valency 3) : like Boron (B) Aluminium (Al), Gallium (Ga), Indium (In) etc.
N-TYPE SEMICONDUCTOR – P-TYPE SEMICONDUCTOR –
When a small amount of pentavalent impurity When a small amount of trivalent impurity
such as arsenic is added to a pure germanium (such as indium, boron or gallium) is added to
semiconductor crystal, the resulting crystal is a pure semiconductor crystal, the resulting
called N-type semiconductor. semiconductor crystal is called P-type
semiconductor

PN junction - A p–n junction is a boundary or interface between two types of semiconductor


materials, p-type and n-type, inside a single crystal of semiconductor. The "p" side contains an
excess of holes, while the "n" side contains an excess of electrons

BIASING – Application of an external DC supply to the device is called as biasing. It is of two types.

Reverse Biasing – When the positive


Forward Biasing – When the positive terminal
terminal of the battery is connected to N
of the battery is connected to the P side and
side and negative terminal of the battery is
negative terminal of the battery is connected to
connected to P side of the diode then the
N side of the diode then it is said to be in
diode is said to be in reverse biased
forward biased condition
condition.

Forward bias PN junction diode –

 Potential barrier reduces


 Width of depletion layer decreases
 Forward current flow in circuit
 PN junction provide very small resistance
 Majority current flows
 Knee or cut voltage 𝐺𝑒 → 0.3 𝑉, 𝑆𝑖 → 0.7 𝑉

Reverse bias PN junction diode –

 Potential barrier increases


 Width of depletion layer increases
 Very small or no current flow in circuit
 PN junction provide high resistance
 Majority current flows
 Knee or cut voltage 𝐺𝑒 → 25 𝑉, 𝑆𝑖 → 35 𝑉
Special purposes PN junction diode

Solar Cell -
Zener Diode: In FB,
light emitting diode directly converts the
Zener diode acts as Photodiode –
(FB) - energy of light into
simple PN junction, in convert incident
reverse bias, it acts as a light to current convert electric electrical energy
voltage regulator energy into light through the
energy photovoltaic effect.

Rectifier – electronic device which converts Ac and DC

Transistor

PNP transistor - When a thin layer of N type NPN transistor- When a thin layer of P type
semiconductor material is sandwiched semiconductor materials is sandwiched between
between two P-type semiconductor materials. Two N type semiconductor materials, NPN
PNP transistor is formed. transistor is formed

NPN transistor –

PNP transistor –
Amplifier – An electronic device which amplifies weak electronic signal

Relation b/w

𝜶, 𝜷 𝒂𝒏𝒅 𝜸 –
𝛽
𝛼=
1+𝛽
𝛼
𝛽=
1−𝛼
𝛾 = 1+𝛽
1
𝛾=
1−𝛼

Oscillator –

Electronic device which generates AC signal from dc source

+ve feedback signal: when o/P is in phase with i/P

-ve feedback signal: when o/P is out of phase with i/P

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