TSA20N50M

500V N-Channel MOSFET

General Description Features

This Power MOSFET is produced using Truesemi‘s • 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V
advanced planar stripe DMOS technology. • Low gate charge ( typical 70nC)
This advanced technology has been especially tailored to • High ruggedness
minimize on-state resistance, provide superior switching • Fast switching
performance, and withstand high energy pulse in the • 100% avalanche tested
avalanche and commutation mode. These devices are well • Improved dv/dt capability
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.

{
D

◀ ▲
{G ●
●

G D S
{S
TO-3P or TO247

Absolute Maximum Ratings TC = 25°Cunless otherwise noted

Symbol Parameter TSA20N50M Units

VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C) 20 A
- Continuous (TC = 100°C) 13 A
IDM Drain Current - Pulsed (Note 1) 80 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 1110 mJ
EAR Repetitive Avalanche Energy (Note 1) 28 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 280 W
- Derate above 25°C 2.3 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter TYP MAX Units
RθJC Thermal Resistance, Junction-to-Case - 0.44 °C/W
RθCS Thermal Resistance, Case-to-Sink Typ. 0.24 - °C/W
RθJA Thermal Resistance, Junction-to-Ambient - 40 °C/W

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TSA20N50M
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = 500 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current
VDS = 400 V, TC = 125°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.5 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 10.0A -- 0.21 0.26 Ω
On-Resistance

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 2700 -- pF
Coss Output Capacitance f = 1.0 MHz -- 400 -- pF
Crss Reverse Transfer Capacitance -- 40 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 100 -- ns
VDD = 250 V, ID = 20.0A,
tr Turn-On Rise Time -- 400 -- ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 100 -- ns
(Note 4, 5)
tf Turn-Off Fall Time -- 100 -- ns
Qg Total Gate Charge VDS = 400 V, ID = 20.0A, -- 70 - nC
Qgs Gate-Source Charge VGS = 10 V -- 18 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 35 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 80.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20.0 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 20.0 A, -- 500 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4) -- 7.2 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.0mH, IAS = 20.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 20.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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Typical Characteristics

VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V

ID , Drain Current [A]

1 Bottom : 5.5 V 1
ID, Drain Current [A]

10 10

150℃

25℃
0
10
0
10
※ Notes : -55℃ ※ Notes :
1. 250µs Pulse Test 1. VDS = 50V
2. TC = 25℃ 2. 250µ s Pulse Test

-1
10
-1 0 1 0 2 4 6 8 10
10 10 10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1.0
IDR , Reverse Drain Current [A]
Drain-Source On-Resistance

0.8

VGS = 10V 10
1
RDS(ON) [Ω ],

0.6
VGS = 20V

0.4
0
10
150℃ 25℃
0.2 ※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µ s Pulse Test

-1
0.0 10
0 10 20 30 40 50 60 70 80 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID, Drain Current [A] VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

6000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 100V
5000 Crss = Cgd 10
VGS, Gate-Source Voltage [V]

VDS = 250V

4000 Ciss 8 VDS = 400V

Capacitance [pF]

Coss
3000 6

2000 4
? Notes :
Crss 1. VGS = 0 V
2. f = 1 MHz
1000 2

? Note : ID = 20 A

0 -1 0
10 10
0
10
1 0 10 20 30 40 50 60 70 80

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 µA 0.5
1. VGS = 10 V
2. ID = 10.0 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

20

Operation in This Area

2
is Limited by R DS(on)
10
16
10 µs
ID, Drain Current [A]

ID, Drain Current [A]

100 µs
1 ms 12
1
10 10 ms
DC
8

0
10
※ Notes :
o 4
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2 3
10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature

Figure 11. Transient Thermal Response Curve

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 Gate Charge Test Circuit & Waveform

VGS
SameType
50KΩ
asDUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

R
L V
DS
V
DS 9
0%

V V
DD
GS
R
G

1
0%
V
GS
1
0V D
UT
td
(on
)
tr td
(off) tf
to
n
to
ff

Unclamped Inductive Switching Test Circuit & Waveforms

L B V
1 DS S
V E
AS=---- LIAS2 --------------------
DS 2 B V DS S-V DD

B
VD SS
ID
IAS
R
G
V
DD ID(t)

1
0V D
UT V
DD V
DS(t)

tp
tp Tim
e

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 Peak Diode Recovery dv/dt Test Circuit & Waveforms

D U T +

V D S

I S D
L

D r iv e r
R G
S am e T ype
as D U T V D D

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a te P u ls e W id th
V GS D = --------------------------
G a t e P u ls e P e r io d 10V
( D r iv e r )

IF M , B o d y D io d e F o r w a r d C u r r e n t
I S D
( D U T ) d i/d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T ) B o d y D io d e R e c o v e r y d v / d t

V S D
V D D

B o d y D io d e
F o r w a r d V o lt a g e D r o p

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