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Part

1 Name some semiconductor materials

2 Is Carbon a semiconductor?

3 How many e in the outermost of semiconductor?

4 How many e in the outermost of Group VA?

5 How many e in the outermost of Group IIIA?
6 Add group VA to a semiconductor to make what type of semiconductor?

7 Add group IIIA to a semiconductor to make what type of semiconductor?

What is the technique of adding Group IIIA, VA materials to
8
semiconductor called?
9 How have n-type semiconductor been created?
10 How have p-type semiconductor been created?

11 Meaning of Majorities and Minorities of semiconductor?

12 What is the Majority Carries in p-type semiconductor?

13 What is the Minority Carries in p-type semiconductor?

When diode is reversed-bias, is there a carrier current?

14
If yes, why current when reversed-bias current is considered as 0?

15 When diode is forward-bias, current is formed by majority or minority?

16 Why people say: " Diode is forward-bias based on diffusion?"

Part 2: BJT
1 How many types of BJT
2 Name types of BJT

3 Why base region is thin and lightly doped?

 4 Name 3 terminals of BJT
5 Name types of BJT current? Relationship?
6 What is Beta

7 Why Beta is the characteristic value of BJT?

8 Why Beta values are different for different BJTs in the market?

9 Distinguish between DC analysis and AC analysis in a amplifier using BJT

10 What different roles of capacitors are in DC analysis and AC analysis?

11 What is the equation of capacitor impedance calculating?

12 How relationship of eq in 2.11 vs 2.10?

13 In DC analysis, why do we care about Q point, and DC load line?

14 What is DC load line/ static load line? What values form Q-point?

15 Do you distinguish between configurations and biasing using BJT?

16 How do we connect BJT in the circuit? How many ways are they connected?

17 How do we bias BJT amplifier? How many way are we can bias?
 Can you confidently draw an amplifying circuit with different connections and
18
different biasing?

19 Can you confidently draw a small signal model of BJT?

Why do we replace the normal BJT symbol with a small signal model in
20
AC analysis?

21 What is a internal resister rE?

22 How to calculate rE?

23 What is formula of thermal voltage(V_T)?

24 Relationship of 2.23 and 2.22

25 Why do we compute Ac, Zi, Zo in only small signal model of amplifying circuits?

26 Can you confidently draw a small signal model of EC, BC, CC circuit?
27 Can you confidently calculate Ai,Av, Zi,Zo of any amplifier using BJT?
Part 3: MOSFET
1 How many types of FET?

2 Can you distinguish between JFET and MOSFET

3 Why we had FET which is called preset channel FET?

4 So which in JFET, DMOS, and EMOS belong to type in 3.3?
5 Name types of E-MOSFET

6 Why are people currently calling MOSFET instead of E-MOSFET?

7 In the word 'MOSFET', what part is structure, and what part is the operation?

8 How does the FET behavior manifest itself in operation?

9 Name 3 terminals of FET

10 Name types of current of MOSFET?

Relationship of current and voltage?
11 What is the name of gm?

12 Why gm is the characteristic value of MOSFET?

13 How the threshold voltage Vth relate to the structure of MOSFET?

14 Why does the conducting channel appear only when VGS > Vth?

15 Distinguish between DC analysis and AC analysis in a amplifier using MOSFET

16 The purposes of capacitor in DC analysis and in AC analysis?

During DC analysis, why must we pay attention to Q-point and DC load line?
17
Does the same apply while analyzing amplifier circuit using BJT?

18 What is Q-point? What values define Q-point?

19 Why should the Q-point be in the middle of the DC load line?

Can you differentiate between connection and biasing amplifying circuit
20
using MOSFET?

21 Name configurations? How many configurations are there?

22 Name types of biasing for amplifier using MOSFET? How many types of biasing are there?

23 Can you draw amplifier circuits with different configuration and biasing?
24 Can you draw small signal model of MOSFET?

25 Why replace the conventional MOSFET notation with its small signal model when analyzing AC?

26 Why draw small signal models of amplifier circuits to calculate Ac, Zi, Zo?

27 Can you draw small signal models for EC, BC, CC circuits?
28 Can you confidently calculate Av, Ai, Zi, Zo of any amplifier using MOSFET?
T
omment/ Ctrl + enter

Answer

3 semiconductors used most frequently - Ge, Si, GaAs (gallium arsenide)

- Germanium (Ge) - sensitivity to changes in temperature
- Si - less temp sensitive, and abundant on earth
- GaAs - high speed

Even though carbon lies in the same group of periodic table as germanium and silicon, it is not a pure or an intrinsic semicond

Electrons in outermost shell is called valence e

- 3e = trivalent
- 4e = tetravalent
- 5e = pentavalent
5e
3e
n-type

p-type

Doping

Introducing a pentavalent impurity for doping

Doping a pure gemanium / silicon crystal with impurity atoms with 3 valence electrons
- Majority carrier have higher concentration in semicoductor
- Minority carrier have lower concentration in semicoductor
Holes
Electron

Yes, we have current of minorities or reverse saturation current.

Since this current is really small (0.7V-Si, 0.3V-Ge) -> consider as 0

Majorities: hole for p-type, e for n-type

diffusion capacitance is larger than transition capacitanced

2 types
npn, pnp

This lower doping level decreases the conductivity (increases the resistance) of this
material by limiting the number of “free” carriers.
Ic=ie-ib => To attain the largest ic, ib need to be small, because 5% of emitter current transfer to base and 95 % current passin
ib is small or large, which depends on the conductivity that is relative to doping. Therefore, we have to lightly dope.
The width also depends on the doping. So that, less doping, dess area=> thin base area.
Emitter(E) , Base(B), Collector(C)
Ic, Ib,Ie, Ic = βIb, Ie = (β+1)Ib,ic=anpha.ie
DC: DC current gain, the proportionality between ic and ib; AC: common-emitter , forward-current , amplification factor
Beta is a particularly important parameter because it provides a
direct link between current levels. A common-emitter configuration, for example,
it provide relationship of the input and output circuits .
Because it depends on the doping concentration of each manufacturer

DC analysis:
- To establish a fixed level of current and voltage, or an static operating point Q on the characteristics.
AC analysis:
- Find Zi, Zo, Ai, Av
- But, Amplification in the ac domain cannot be obtained without the application of dc biasing level .

DC: capacitor -> open-circuit; AC: capacitor -> short-circuit

Z_c = 1/(2.pi.f.C)
DC: f=0 > Z_c = infinity > open-circuit
AC: f=very big ~ infinity (in application) > Z_c = 0 > short-circuit
Q point, DC load line: define the region that will be employed for amplification of the applied signal
DC load line:
Q(I_b, I_c, V_CE)

3 configurations
+ CB=common Base: Base in common, input = emitter, output = collector
+ CE=common Emitter: Emitter in common, input = base, output = collector
+ CC=common Collector: similar to CE, hardly use, Collector in common, input = base, output=emitter

More than 2 ways. 2 common use way

+ Voltage-divider biasing
+ Feedback
Because
+ To determine the desired quantities of the network.
+ an important parameter of the equivalent circuit was determined by the actual operating conditions
rather than using a data sheet value that in some cases could be quite different

It is diode resistance when replacing the diode

by its equivalent resistance
rE =( kT/q)/I_e(DC) = 26mV/I_e(DC)(Si)

V_T = kT/q
where
k = Boltzmann’s constant = 1.38 x 10 ^(-23) J/K,
T_K = the absolute temperature in kelvins = 273 + the temperature in °C,
q = the magnitude of electronic charge = 1.6 x 10 ^(-19) C

rE = V_T/IE

Because:
+ allows amplifiers to be characterized according to their effective input and output impedances
as well as their power and current ratings. When cascading individual amplifier stages together one after another -> minimise
through the amplification circuit.
+ Simplify complex circuit as 'black box' or 4 terminal model without care much about anything inside

hhh
2 types: JFET, MOSFET (additional: MESFET)

JFET:
- Operate only in depletion mode (Up<UGS<0, UDS>0)
- Reverse biasing of the gate terminal controls the conductivity
- JFET input impedance is much smaller
- Chareacteris curve is Flatter
- Manufacturing process is simple
- It has 3 terminal Gate(G), Drain (D), Source(S)
- Drain resister (10^5-10^6 Ω)
MOSFET:
- Operate in Enhancement and depletion mode. D-mosfet ( wtih every UGS, UDS>0), E-mosfet (UGS>Uth>0, UDS>0)
- Carriers induced in the channel controls the Conductivity
- MOSFET input impedance is much highẻ
- Less FLat characteristics cure in comparison to JFET
- Manufacturing process is difficult
- Has 4 terminals: G,D,S,SS
- Drain resistance in case of MOSFETs is of the order of 1 to 50 K Ω.

just provide potential between source and drain (V_DS>0) -> have current
JFET, DMOS
n channel EMOS, p channel EMOS
Since DMOS is outdated, that is, not being used anymore. People mainly use EMOS, so when we say MOSFET,
we immediately think about E-MOSFET
Structure: MOS = metal oxide semiconductor
Operation: FET = field effect transistor => Transistor works based on the field effect
when we have voltage V_G > 0, the channel is constructed
-> Control behavior of EMOS by controlling voltage
Source(S), Gate (G), Drain (D)
I_s = I_d = I_ds, commonly use I_d
I_d = k(V_GS - V_T)^2
Transconductance
Transconductance is an expression of the performance.
gm = d(I_d)/d(V_gs)
the larger the transconductance figure for a device, the greater the gain(amplification) it is capable of delivering, when all othe
constant
the level in which the channel is absolutely constructed
when V_GS<V_T -> channel is neutralized by substrate

DC analysis:
- To establish a fixed level of current and voltage, or an static operating point Q on the characteristics.
AC analysis:
- Find Zi, Zo, Ai, Av
- But, Amplification in the ac domain cannot be obtained without the application of dc
biasing level .
DC: capacitor -> open-circuit
AC: capacitor -> short-circuit
Q point, DC load line: define the region that will be employed for amplification of the applied signal.
Yes, totally similar
Q point is the contact point of the Load line and the characteristic curve
Q is defined by VGS(Q) and ID(Q)
To ensure the range of AC signal is flexible as much as possible

3 configurations:
- Common source: Source in common, input at Gate, output at Drain
- Common drain: Drain in common, input at Gate, output at Source
- Common gate: Gate in common, input at Source, output at Drain

More than 2 ways. 2 common use way

+ Voltage-divider biasing
+ Feedback

Reasons:
- The notation MOSFET in its small signal model illustrate its characteristic value gm and its relation to VGS

Reasons:
- To understand the components of Zi, Zo
- To see the relationship between the voltages on different part of the amplifier circuits
+ allows amplifiers to be characterized according to their effective input and output impedances
as well as their power and current ratings. When cascading individual amplifier stages together one after another -> minimise
through the amplification circuit.
+ Simplify complex circuit as 'black box' or 4 terminal model without care much about anything inside

The end