Power Transistor (50V, 3A)

2SD1760 / 2SD1864

Features Dimensions (Unit : mm)

1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) 2SD1760 2SD1864
(IC/IB = 2A / 0.2A) 2.3 +0.2
6.8±0.2 2.5±0.2
6.5±0.2 −0.1
2) Complements the 2SB1184 / 2SB1243.

1.5±0.3
C0.5
5.1 +0.2
−0.1 0.5±0.1

4.4±0.2
0.9
−0.1
5.5 +0.3

9.5±0.5
0.9

1.5
Structure

1.0
0.65Max.

2.5
0.75 0.65±0.1
Epitaxial planar type

14.5±0.5
0.9
0.5±0.1
NPN silicon transistor 2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)

2.54 2.54
1.05 0.45±0.1
(1) (2) (3)

(1) Base (1) Emitter

(2) Collector (2) Collector
ROHM : CPT3
EIAJ : SC-63 (3) Emitter ROHM : ATV (3) Base

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
3 A (DC)
Collector current IC ∗1
4.5 A (Pulse)

Collector power 2SD1760 15 W (Tc=25°C)∗2

PC
dissipation 2SD1864 1 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Single pulse, PW=100ms
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50μA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 5 − − V IE=50μA
Collector cutoff current ICBO − − 1 μA VCB=40V
Emitter cutoff current IEBO − − 1 μA VEB=4V
Collector-emitter saturation voltage VCE (sat) − 0.5 1 V IC/IB=2A/0.2A ∗
DC current transfer ratio hFE 120 − 390 − VCE=3V, IC=0.5A ∗
Transition frequency fT − 90 − MHz VCE=5V, IE=−500mA, f=30MHz ∗
Output capacitance Cob − 40 − pF VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.

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 2SD1760 / 2SD1864 Data Sheet

Packaging specifications and hFE

Package Taping
Code TL TV2
Basic ordering
Type hFE unit (pieces) 2500 2500

2SD1760 QR −
2SD1864 QR −

hFE values are classified as follows:

Item Q R
hFE 120 to 270 180 to 390

Electrical characteristic curves

10 3.0 40mA
3.0
VCE = 3V Ta = 25°C 50mA Ta = 25°C
35mA 45mA
5
COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

45mA 30mA 40mA
COLLECTOR CURRENT : IC (A)

2.5 25mA 2.5 35mA

50mA 30mA
2 20mA
25mA
Ta = 100°C 20mA
1 2.0 2.0
25°C
15mA
−25°C 15mA
0.5
1.5 1.5
0.2 10mA
10mA
0.1 1.0 1.0

0.05 IB = 5mA
5mA
0.5 0.5
PC = 15W
0.02
0 IB = 0mA
0.01 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 3 4 5 0 10 20 30 40 50

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded-emitter output
characteristics characteristics ( Ι ) characteristics( ΙΙ )

10
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1000 1000
Ta = 25°C VCE = 3V Ta = 25°C
500 500 5
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

200 200 Ta = 100°C 2

VCE = 5V
100 100 1
50 50 0.5
25°C
3V −25°C
20 20 0.2
IC/IB = 50
10 10 0.1
20
5 5 0.05 10

2 2 0.02
1 1 0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation
collector current( Ι ) collector curren( ΙΙ ) voltage vs. collector current

10 1000 1000
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
: VBE (sat) (V)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

lC/lB = 10 Ta = 25°C Ta = 25°C

TRANSITION FREQUENCY : fT (MHz)

5 500 VCE = 5V 500 f = 1MHz

IE = 0A
2 200 200
1 Ta = −25°C 100 100
0.5 100°C 50 50
VBE (sat)
BASE SATURATION VOLTAGE

25°C
0.2 20 20
0.1 10 10
Ta = 100°C
0.05 −25°C 5 5
25°C
0.02 VCE (sat) 2 2
0.01 1 1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 1 2 5 10 20 50 100 200 5001000 0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (A) EMITTER CURRENT : −IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.7 Collector-emitter saturation Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance
voltage vs. collector current emitter current vs. collector-base voltage
Base-emitter saturation voltage
vs. collector current

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2SD1760 / 2SD1864 Data Sheet

5 5

TRANSIENT THERMAL RESISTANCE : Rth (°C/W)

VCE=5v

Pw
IC=0.2A

PW

Pw

=1
2
COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

2

=1

0m s
=1
100

PW

00

s
0m
1

m
=1
1

s∗
00

DC
ms
0.5
0.5
∗
DC 10
0.2
0.2
0.1
0.1
0.05 1
0.05 Ta=25°C
0.02 Ta = 25°C Single
nonrepetitive
∗Single pulse 0.02 pulse
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100 0.1 0.2 0.5 1 2 5 10 20 50 100
1 10 100 1sec 10sec 100sec
COLLECTOR TO EMITTER VOLTAGE : VCE (V) TIME : T (ms) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Safe operating area Fig.11 Transient thermal resistance Fig.12 Safe operating area
(2SD1760) (2SD1760) (2SD1864)
TRANSIENT THERMAL RESISTANCE : Rt h (°C/W)

100

10

0.1
1 10 100 1 10sec 100sec 1000sec
TIME : T (ms)

Fig.13 Transient thermal resistance

(2SD1864)

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 Notice

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