Tute 1

4.2On a Si sample, incident light is at t = 0 uniformly, which generates excesscarriers

for t > 0. The generation rate for carriers is 10 19/cm3. Sample isdoped with 1016/cm3
As atoms. Determine the change in conductivity of the sampleat t = 10-5s. Find the
separation of quasi Fermi levels at 450 K. Dn=36cm2/S, Dn=12cm2/S
Given τ =5*10-6Sec, no=2*1015/cm3