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RESEARCH ARTICLE

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Elucidate the Thermal Degradation Mechanism of Y6-Based


Organic Solar Cells by Establishing Structure-Property
Correlation
Jingming Xin, Chao Zhao, Ziqi Geng, Wenyue Xue, Zhenyu Chen, Chunpeng Song,
Han Yan, Qiuju Liang, Zongcheng Miao,* Wei Ma,* and Jiangang Liu*

Organic solar cells (OSCs) achieved performance booming benefiting from 1. Introduction
the emerging of non-fullerene acceptors, while inadequate device stability Organic solar cells (OSCs) based on
hampers their further application. At present, the prevalent belief attributes the development of non-fullerene accep-
the inevitable thermal degradation of OSC device to morphological instability tors (NFAs), achieve impressive break-
caused by excessive phase separation and crystallization in the active layer through on power conversion efficiency
(PCE) over 19%.[1–3] Considerable de-
during device operation. However, it is inapplicable for state-of-art Y6-based
vice performance and competitive fabri-
devices which strongly degrade before large-scale morphology change. cation cost enable promising industrial-
Herein, an alternative degradation mechanism is elucidated wherein ization potential in manifold application
molecular orientation change and demixing induced performance degradation scenarios.[4,5] However, the stability issue
in Y6-based devices. Distinct from IT-4F-based counterpart, Y6-based devices of OSC devices restrict its practical op-
suffer severe thermal degradation dominated by open-circuit voltage (VOC ) eration, which attracts increasing atten-
tions from the community.[6] Although
and fill factor (FF) losses. The VOC loss is attributed to molecular orientation
extraordinary extrapolated lifetime over
transition of polymer donors from edge-on to face-on, leading to a strong decade has been realized in few OSC
built-in potential reduction and increase in non-radiative loss due to energy systems,[7,8] maintaining eligible device
level shifting. As for FF decay, discontinuous acceptor phases result in lifetime is still a challenge in most high-
electron mobility decrease by over orders of magnitude, originating from the performance systems compared to inor-
ganic photovoltaics. Especially, Y6-based
increased molecular stacking and phase separation. This work reveals the
OSCs with over 15% PCEs only yield
thermal degradation mechanism for Y6-based devices and correlates the operational lifetimes spanning hundred
photoelectric properties with morphology instability, which will offer guidance to thousand hours.[9–11] The inadequate
for improving the stability of high-performance OSCs. stability can be understood as devices
suffer severe performance degradation

J. Xin, C. Song, J. Liu Z. Miao


School of Electronics and Information Technological Institute of Materials & Energy Science (TIMES)
Northwestern Polytechnical University Xi’an Key Laboratory of Advanced Photo-Electronics Materials and
Xi’an 710129, P. R. China Energy Conversion Device
E-mail: jgliu@nwpu.edu.cn School of Electronic Information
C. Zhao, W. Xue, Z. Chen, H. Yan, W. Ma Xijing University
State Key Laboratory for Mechanical Behavior of Materials Xi’an 710123, P. R. China
Xi’an Jiaotong University E-mail: miaozongcheng@nwpu.edu.cn
Xi’an 710049, P. R. China Z. Miao
E-mail: msewma@xjtu.edu.cn School of Artificial Intelligence
Z. Geng, Q. Liang Optics and Electronics (iOPEN)
School of Microelectronics Northwestern Polytechnical University
Northwestern Polytechnical University Xi’an 710072, P. R. China
Xi’an 710129, P. R. China

The ORCID identification number(s) for the author(s) of this article


can be found under https://doi.org/10.1002/aenm.202401433
DOI: 10.1002/aenm.202401433

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against external stresses and intrinsic instability.[12] Among all tion when annealed much above its Tg , while JSC only exhibit
types of degradation, thermal degradation is inevitable due slightly decrease.[39] Uddin et al. reported strong burn-in loss in
to high operational temperature under sunlight illumination, PM6:N3 devices by around 50% PCE dropping without distinct
which will affect active layer morphology.[13] Therefore, under- morphology change, which was speculated to be caused by inter-
standing and improving the thermal stability deserves to be a face and electrode degradation.[40] We notice that Y6-based sys-
significant research topic which contributes to device lifetime en- tems appear distinguishing thermal degradation less affected by
hancement and further application. large-scale morphology change but the corresponding degrada-
To understand the thermal degradation mechanism, it should tion mechanism, to our knowledge, is still obscure and rarely
be realized that the optimal morphology is usually kinet- studied. Therefore, analyzing how morphology affect the photo-
ically quenched and at thermodynamically non-equilibrium electric conversion processes basing on structure-property corre-
state.[14–16] Further thermal-induced morphology evolution de- lation is urgently demanded for understanding the degradation
viates from optimal morphology leading to device performance mechanism and improving the thermal stability of state-of-art Y6-
degradation.[17,18] Ade and coworkers ascribed the critical fac- based OSC devices.
tors controlling stability to demixing, crystallization and dif- Herein, we investigate the thermal stability of representative
fusion on the basis of thermodynamics and kinetics.[19] This NFA Y6 combined with high-efficiency polymer donors D18 and
is valid for most binary blend systems and highly related PM6 to elucidate the degradation mechanism of Y6-based devices
to the material selection. Typically, fullerene derivative accep- in comparison with PM6:IT-4F with favorable performance and
tors are known to present aggregation and phase coarsen- stability. After long-time annealing under 140 °C, significant per-
ing forming oversize domains and large crystals even under formance degradation can be observed in Y6-based devices due
slight thermal stress due to their diffusive ability with spheri- to prominent open-circuit voltage (VOC ) and FF losses, which is
cal structure,[20,21] which are detrimental to exciton dissociation, distinct from PM6:IT-4F blend and absence in their shelf stability
photo-generated charge carrier and consequently short-circuit test. To explore such degradation, we carried out multiple photo-
current density (JSC ).[22,23] Moreover, the spontaneous spinodal electrical measurements for the devices before and after thermal
demxing of deeply quenched polymer:fullerene blends occurs aging. The built-in potential was characterized to interpret VOC
even at room temperature, resulting in abnormal burn-in degra- loss with larger reduction for Y6-based devices after aging, which
dation with large JSC loss at the early stage of device operation.[24] was further confirmed by upshifted energy levels of D18, PM6
After fullerene-based acceptors, ITIC-based NFAs were exten- and Y6. Meanwhile, energy loss measurements present much
sively utilized to fabricate temporally high-performance devices stronger non-radiative recombination in Y6-based devices, also
with considerable thermal stability. This is attributed to the large suggesting higher voltage loss after aging. Moreover, we noted
fused-ring core structure enabling good miscibility with polymer the electron mobility show orders of magnitude losses for all
donors and limited molecular diffusion. It was demonstrated aged blend devices, which is the reason for FF loss. To correlat-
that ITIC shows diffusion-limited crystallization below its high ing the photoelectric degradation with blend film morphology,
glass transition temperature (Tg ≈ 180 °C), which only allows X-ray scattering measurements indicate that the molecular ori-
locally reorganization.[25,26] The large-scale crystal growth and entation of polymers in Y6-based blends apparently turned from
phase separation are able to happen at extremely high temper- edge-on to face-on, while their molecular stacking and phase sep-
ature above Tg , ensuring sufficient percolation channel and fa- aration were enhanced as well. The increased face-on polymer
vorable morphological stability.[19,27] Interestingly, IT-4F exhibits molecular orientation can be correlated to built-in potential and
diffusion-limited aggregation when blending with different poly- non-radiative loss variation agreeing well with VOC loss, while in-
mer donors. Small isolated NFA molecules become morpholog- creased molecular stacking and phase separation break the con-
ical traps in the polymer matrix, resulting in strong trap-assisted tinuous acceptor phases resulting in FF decay. Establishing the
recombination and fill factor (FF) degradation.[28] Under current correlation between morphology variation and specific device pa-
research background, the primary mechanism of thermal degra- rameter loss, this work provide profound and novel insight into
dation for fullerene- and ITIC-based OSCs has been delineated to thermal stability of representative Y6-based OSCs, which will in-
be miscibility and crystallization induced morphology evolution. struct further morphology regulation and device fabrication for
In recent years, Y6 and its derivatives achieved remark- high-performance and stable photovoltaics.
able PCE improvements,[29,30] primarily due to favorable spa-
tial molecular stacking and suitable phase separation.[31–34] Nev- 2. Results and Discussion
ertheless, the morphology stability of Y6 is inferior to ITIC-
based acceptors in blend films.[35,36] As Tg has been regarded 2.1. Device Performance and Thermal Stability Characterizations
as a critical parameter to evaluate morphological stability, a se-
ries of Y6-based acceptors were confirmed to show pretty lower The chemical structures of selected polymer donors (D18 and
Tg due to their long lengths of alkyl side chains originally de- PM6) and NFAs (Y6 and IT-4F) are shown in Figure 1a. Binary
signed to increase the solubility.[37] The lower Tg indicates in- OSC devices of D18:Y6, PM6:Y6 and PM6:IT-4F were fabricated
trinsic instability and raises a performance-stability conundrum in inverted structure (Figure 1b), and the device fabrication de-
for this type of NFAs. Meanwhile, the high diffusion coefficients scription can be found in Supporting Information. The current
of Y6-based NFAs were measured in terms of bilayer interdiffu- density-voltage (J-V) curves of optimized devices for three are
sion experiment, suggesting strong thermodynamic driven dif- shown in Figure 1c, and Table S1 (Supporting Information)
fusion within the blend films.[37,38] However, Alam et al. sug- lists the corresponding photovoltaic performance parameters.
gested the inverted PM6:Y6 devices present gradual degrada- Among them, D18:Y6 blend device presents the highest PCE

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Figure 1. a) The chemical structures of D18, PM6, Y6 and IT-4F, b) scheme of inverted device structure, c) J-V characteristics of optimized D18:Y6,
PM6:Y6 and PM6:IT-4F solar cells devices. The normalized (a) PCE, (b) JSC (c) VOC and d) FF as a function of annealing time for all devices under
140 °C annealing. The device parameters of each system are averaged from ten devices with error bars denoting the standard deviations.

of 17.01% with JSC of 26.78 mA/cm2 , VOC of 0.858 V and FF of vices. In Figure 1f, D18:Y6 and PM6:Y6 devices show similar loss
74.04%. PM6:Y6 blend exhibits slightly lower PCE of 15.75% due trend with about 71% of VOC left after 20 hours annealing, while
to inferior VOC of 0.848 V and FF of 71.84%. As for PM6:IT-4F PM6:IT-4F devices keep 85% of the initial VOC . In Figure 1g,
blend, insufficient of JSC (19.36 mA/cm2 ) and FF (69.39%) lead D18:Y6 devices show the largest FF loss with only 65% of FF
to lower PCE of 11.56% despite higher VOC (0.861 V). The ex- left, and PM6:IT-4F devices present much smaller decay with
ternal quantum efficiency (EQE) spectra (Figure S1, Supporting 86% of the initial FF after annealing. In between, PM6:Y6 de-
Information) present the light harvesting and confirm JSC of vices still maintain 75% of initial FF compared to fresh devices.
three blend devices. Overall, it is evident to find that Y6-based devices show simi-
As the photovoltaic devices were well prepared, we investigated larly strong VOC decay induced thermal degradation compared
the thermal stability by annealing the fresh devices on 140 °C to more stable IT-4F-based devices during high temperature an-
hot plate and tracking their performance evolution in nitrogen nealing, which is seldom noticed and needs to be carefully in-
glovebox. This temperature is much higher than the Tg of Y6 vestigated. Meanwhile, FF decay is also noteworthy for consider-
blends, which could accelerate the morphology evolution. The able contribution to PCE degradation, though it varies in differ-
normalized performance parameters as a function of anneal- ent blend systems. Considering interface layer plays an impor-
ing time were presented to delineate the thermal stability. No- tant role in device stability, the conventional devices were fabri-
tably, Y6-based devices suffer severe PCE degradation as shown cated and tested under the same condition. As shown in Figure
in Figure 1d, in which only 44% and 50% of the initial PCE were S2 (Supporting Information), the conventional devices present
maintained after 20 hours annealing. Analyzing the specific pa- much severe degradation within only 10 minutes than inverted
rameter evolution, all the three systems present minor current devices, dominating by VOC losses over 44% and 37% of their
density loss that over 90% of the initial JSC can be retained af- initial values for D18:Y6 and PM6:Y6. The instability of elec-
ter 20 hours annealing (Figure 1e), while the JSC degradation tron transportation layer of PDINO used in conventional devices
of IT-4F based devices is slightly larger than the Y6-based de- has been reported elsewhere.[41] Compared with inverted devices,

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Figure 2. a–c) Jph -Veff curves for fresh and aged D18:Y6, PM6:Y6 and PM6:IT-4F devices, d) ionization potential diagram for pristine films before and
after aging obtained from UPS measurements, insert is the scheme of energy level determining Vbi , e) simulated J-V curves with varied Vbi .

the excessive degradation of conventional Y6-based devices, espe- voltage, and Vbi can be extracted by the voltage at Jph = 0. Consid-
cially on VOC , can be attributed to interface deterioration. Hence, ering the major degradation occurs within 5 hours, all aged sam-
the inverted structure can effectively lower the influence of in- ples in this work are the films or devices annealed at 140 °C for
terface layer induced degradation during thermal annealing. In 5 hours. The results show that the Vbi of fresh D18:Y6 and
addition, ZnO layer shows high photocatalytic activity with ac- PM6:Y6 devices are 0.907 and 0.902 V, while they dramatically de-
tive layer materials leading to photocatalytic degradation.[42] To crease to 0.743 and 0.742 V after aging. Nevertheless, PM6:IT-4F
clarify the influence, shelf stability was also measured (Figure device shows moderate Vbi degradation from 0.945 to 0.852 V af-
S3, Supporting Information) at room temperature in glovebox, ter aging. To understand such Vbi variation, it should be learned
showing satisfactory shelf stability Y6-based devices even better that Fermi-pinning effect limits effective work function of elec-
than PM6:IT-4F after 20 hours storage. Compared to annealed trode contact, and thus Vbi of the device.[44,46] Three possible fac-
devices, shelf devices show similar JSC decay trend but negligi- tors would affect Vbi , which are electrode work function, ener-
ble VOC and FF loss, indicating barely photocatalytic degradation getic states of electrode/buffer layer interface energetic state and
and the high temperature annealing induced losses in Y6-based active layer. If the former two factors are dominating, the Ohmic
devices. contact will be damaged resulting in “S” shaped J-V curve and
extremely serious degradation even worse than in the conven-
tional devices.[43] They have also been studied and indicated the
2.2. Voltage Loss Analysis and Charge Carrier Investigation validity of improving device stability by optimizing interface layer
toward high Vbi .[47,48] In our case, we only noticed the significant
Since Y6-based devices lead similar and strong VOC loss trend Vbi losses in Y6-based devices which share the same electrodes
during thermal degradation, we carried out a series of investiga- and interfacial layers with PM6:IT-4F. Without excessive degra-
tion to explain this phenomenon. In OSC devices, built-in poten- dation in conventional devices, we are able to rationally specu-
tial (Vbi ) is a critical parameter to affect the internal electric field late that the degradation is mainly attributed to the active layer,
and the upper limit of VOC , which can be defined as the effec- though it is incapable to completely exclude the effect of inter-
tive work function difference between electrodes often relating to face layer. The structural change of active layer induces different
Fermi level of electrode and vacuum level of semiconductor.[43–45] energy level change, leading to distinct Vbi reduction in three in-
In order to obtain Vbi value, the photocurrent densities (Jph = JL – verted devices.
JD ) were characterized and plotted as a function of effective volt- Ultraviolet photoelectron spectroscopy (UPS) was applied to
age (Veff = Vbi – Vappl ) in Figure 2a–c, where JL and JD are the cur- measure ionization potential and evaluate the highest occupied
rent densities under light and dark conditions, Vappl is the applied molecular orbital (HOMO) level variation. Fresh and aged

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Table 1. Voltage loss parameters for fresh and aged D18:Y6, PM6:Y6 and PM6:IT-4F devices.

Device Eg [eV] qVOC VOC SQ VOC rad ΔE1 ΔE2 [eV] ΔE3 [eV] Eloss [eV]
[eV] [eV] [eV] [eV]

D18:Y6 Fresh 1.413 0.852 1.000 0.920 0.413 0.080 0.181 0.674
Aged 1.391 0.670 0.981 0.906 0.410 0.075 0.224 0.709
PM6:Y6 Fresh 1.423 0.842 1.01 0.927 0.414 0.082 0.134 0.629
Aged 1.396 0.680 0.991 0.908 0.405 0.083 0.196 0.685
PM6:IT-4F Fresh 1.579 0.873 1.162 1.049 0.418 0.113 0.212 0.742
Aged 1.574 0.810 1.152 1.037 0.421 0.115 0.231 0.767

pristine films were prepared using the same condition in blend terms of the derivative of sensitive EQE (sEQE) spectra. As shown
films to measure energy level change of donor and acceptor, in Figure S5 (Supporting Information) and Table 1, Eg PV values
respectively, as shown in Figures 2d and S4 (Supporting Informa- are 1.413, 1.423, and 1.579 eV for fresh D18:Y6, PM6:Y6 and
tion). Apparently, D18 shows the largest HOMO level upshifting PM6:IT-4F, while the aged Eg PV are 1.391, 1.396 and 1.574 eV. The
of 0.28 eV from 5.42 to 5.17 eV and Y6 presents downshifting stronger band gap narrowing of aged Y6-based devices agrees
HOMO level from 5.69 to 5.87 eV after aging. PM6 (processed by with larger voltage degradation. These Y6-based devices show mi-
CF with CN) presents large HOMO level upshifting from 5.20 to nor ΔE1 and ΔE2 changes after aging indicating the radiative re-
5.03 eV and the HOMO level of aged Y6 processed with CN shifts combination can hardly affect energy loss for long-time annealed
from 5.75 to 5.82 eV. As for PM6 and IT-4F combination, only devices. Then, we measured electroluminescence (EL) spectra
minor HOMO level upshifting of PM6 (processed by CB with for three systems to evaluate ΔE3 . As shown in Figure 3a–c, the
DIO) can be observed from 5.14 to 5.07 eV, while IT-4F slightly D18:Y6 and PM6:Y6 present larger EQEEL value reduction after
downshift from 5.85 to 5.87 eV. According to the results, promi- aging than the PM6:IT-4F counterpart, though their EQEEL val-
nent upshifted HOMO levels of polymer donors in Y6-based ues of fresh devices are higher. As a consequence, ΔE3 changes
systems can be connected to the larger Vbi reduction as depicted from 0.181 to 0.224 eV, 0.134 to 0.196 eV and 0.212 to 0.231 eV
in the insert scheme of Figure 2d. Usually, band bending at for aged D18:Y6, PM6:Y6 and PM6:IT-4F, respectively. Since
anode contact is correlated to the energetic offset between donor HOMO offset has been proved to greatly impact on ΔE3 ,[49,50]
and anode. When two electrodes with different work functions the large upshifted donor HOMO levels and moderately down-
align, the corresponding band bending can be used to determine shifted Y6 HOMO levels result in increased HOMO offset ac-
Vbi . The fresh films with lower-lying HOMO levels form initially cording to UPS results. This is consistent to the apparently larger
large band bending as well as Vbi . After long-time annealing, ΔE3 enhancements of Y6-based devices than PM6:IT-4F, which
the HOMO level of polymer largely upshifts, minishing the indicates much stronger non-radiative recombination in aged Y6
band bending with anode and consequently decreasing Vbi . The devices. In addition, photoluminescence (PL) spectra show ap-
significantly reduced Vbi results in severe VOC decay for Y6-based parently PL intensity decline of aged D18:Y6 and PM6:Y6 com-
devices. Nevertheless, PM6 (processed by CB with DIO) shows pared to the fresh films in Figure S6 (Supporting Information).
small HOMO shifting leading to less reduced Vbi and VOC in As PL intensity is related to the radiative and non-radiative recom-
IT-4F based devices. As for acceptors, moderate downshifted bination rate, such PL intensity decline confirms significantly
HOMO levels of Y6 can help to estimate the lowest unoccupied increased non-radiative recombination.[51,52] As for PM6:IT-4F
molecular orbital (LUMO) levels downshifting of aged Y6, while films in Figure S7c (Figure 2d), negligible PL enhancement af-
IT-4F presents negligible change after aging. The downshifted ter aging agrees with smaller ΔE3 change. Thus, the total Eloss of
LUMO levels reduce the band bending at cathode contact, which Y6-based devices increase mainly due to enhanced non-radiative
further decrease Vbi for aged Y6-based devices. recombination loss (Figure 3d and Table 1), which explain their
To further verify the decline of Vbi resulting in VOC degrada- remarkable VOC loss.
tion, we also conduct electrical simulation to obtain J-V curves To study the dramatic FF degradation of aged devices, the
based on the drift-diffusion-generation (DDG) model with Vbi as charge-carrier recombination processes of different devices be-
a variable. As shown in Figure 2e, the simulated J-V curves ex- fore and after aging were characterized in terms of the depen-
hibit obvious decreasing of VOC from 0.815 to 0.655 V as the Vbi dence of VOC on different light intensity. In Figure 4a–c, the
was set from 0.94 to 0.75 V. The similar degradation trend con- slopes (S) of VOC as a function of light intensity were extracted
firms that built-in potential reduction is the reason of VOC loss, to be 1.08, 1.32 and 1.07 kT/q for D18:Y6, PM6:Y6 and PM6:IT-
which is significantly detrimental to the device thermal stability. 4F, respectively, suggesting bimolecular recombination is pre-
In parallel, energy loss (Eloss ) characterization is an effective dominant but relatively higher trap-assisted recombination in
and frequently-used method to elucidate the voltage difference PM6:Y6. After aging, the S values of D18:Y6 and PM6:Y6 slightly
in OSCs, which can be applied in our study for the fresh and decrease to 1.03 and 1.29 kT q−1 , while PM6:IT-4F increases to
aged devices. The energy loss derive from the sum of ΔE1 , ΔE2 1.09 kT q−1 showing stronger trap-assisted recombination. These
and ΔE3 , where ΔE1 and ΔE2 denote radiative recombination results suggest long-time aging barely change the recombination
above and below the band gap, and ΔE3 is due to non-radiative re- type of Y6-based devices, though large performance degradation
combination. We first calculated photovoltaic band gap (Eg PV ) in can be found.

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Figure 3. EQEEL spectra for fresh and aged a) D18:Y6, b) PM6:Y6 and c) PM6:IT-4F devices, d) energy loss diagram including ΔE1 , ΔE2 , and ΔE3 for all
fresh and aged devices.

Besides, charge-carrier mobility was measured by space- In addition, the exciton dissociation efficiencies (Pdiss ) of de-
charge-limited current (SCLS) method (Figure S8, Supporting vices were evaluated from Jph -Veff curves (Figure 2a–c) to decrease
Information) for hole and electron only devices. As shown from 92.80% to 92.72% for D18:Y6 and increase from 90.29%
in Figure 4d and Table S3 (Supporting Information), fresh to 92.86% for PM6:Y6 after long-time annealing. The slightly in-
D18:Y6 device with the best performance presents the highest creased Pdiss can be attributed to the smallest dark current density
hole mobility (μh ) of 3.15 × 10−4 cm2 V−1 S−1 and electron (Figure S9, Supporting Information) and increased saturated cur-
mobility (μe ) of 2.82 × 10−4 cm2 V−1 S−1 among all devices, rent density after aging. Such minor changes and over 90% Pdiss
while aged device shows one order of magnitude smaller of Y6-based devices promise the relatively high and stable JSC . As
μh of 4.55 × 10−5 cm2 V−1 S−1 and severe degraded μe of for PM6:IT-4F device, the Pdiss decreases from 85.31% to 83.53%
9.27 × 10−7 cm2 V−1 S−1 over two orders of magnitude. The strong confirming the slightly larger loss of JSC .
degradation of both μh and μe as well as unbalanced charge-
carrier mobility lead to the largest FF loss for D18:Y6 devices.
Before and after aging, PM6:Y6 shows slight reduction of μh from 2.3. Morphology Characterization and Calculation
2.52 × 10−4 to 1.91 × 10−4 cm2 V−1 S−1 , and μe also greatly de-
creases from 9.08 × 10−5 to 1.06 × 10−6 cm2 V−1 S−1 . This allows Morphology evolution has always been regarded as a critical
the smaller FF loss of PM6:Y6 than D18:Y6. As for PM6:IT-4F, factor in thermal stability research. Therefore, we characterized
the μh increases from 1.14 × 10−4 to 1.83 × 10−4 cm2 V−1 S−1 , and the active layer morphology for fresh and aged films. Grazing
μe largely decreases from 8.34 × 10−5 to 6.05 × 10−7 cm2 V−1 S−1 . incident wide angle X-ray scattering (GIWAXS) measurements
We notice the thermal aging results in much more serious were employed to detect the molecular stacking and orientation
degradation of μe than μh , which can be correlated to morphol- respect to substrate. As the GIWAXS 2D patterns shown in
ogy change and discussed in the following section. Furthermore, Figure S10 (Supporting Information), the well-defined and
we simulated J-V curves with varied charge mobility μ to verify broad 𝜋–𝜋 stacking peaks of acceptors can be observed in out-
the charge mobility resulting in FF degradation. Due to the of-plane direction and mixed lamellar stacking peaks of polymer
accuracy limit of calculation, the charge mobility was controlled and NFAs for all three fresh and aged films. The 1D line-cuts
from 3 × 10−4 to 5 × 10−5 cm2 V−1 S−1 obtaining decreasing are plotted in Figure 5a, and the corresponding parameters are
of FF from 79.09 to 72.61% in Figure 4e, which suggests the summarized in Table 2 based on scattering line-cuts fitting.
importance of charge mobility affecting FF during the thermal The (010) peaks of Y6 locate at 1.74 and 1.75 Å−1 (d-spacing
degradation. of 3.61 and 3.58 Å) with coherence length (CL) of 2.75 and

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Figure 4. Light intensity dependent VOC curves for fresh and aged a) D18:Y6, b) PM6:Y6 and c) PM6:IT-4F devices, d) charge carrier mobility of fresh
and aged devices, e) simulated J-V curves with varied charge mobility.

2.53 nm for fresh D18:Y6 and PM6:Y6 film, respectively. The larger than that in PM6:Y6 blend. The molecular stacking of
aged films present narrower (010) d-spacing of 3.58 and 3.56 Å polymer donors are prominently enhanced in all three blends.
and enhanced CL of 3.06 and 3.00 nm for D18:Y6 and PM6:Y6, The molecular orientation distribution are analyzed by extract-
respectively, which confirms more ordered 𝜋–𝜋 stacking of ing the pole figures of (100) and (010) scattering peaks for three
Y6 molecules. In contrast, IT-4F shows (010) peak at 1.75 Å−1 blends denoting the orientation change of polymer donors and
(d-spacing of 3.59 Å), of which the CL increases from 2.38 to NFAs, respectively. In Figure 5b–d, scattering intensity was cor-
2.53 nm after aging. We found enhanced 𝜋–𝜋 stacking of Y6, rected by pole angle and normalized, then plotted as a function
which can be confirmed by the redshift of Y6 absorption peaks of pole angle, where the pole angle is defined to be the angle be-
in ultraviolet-visible (UV–vis) absorption spectra (Figure S11a,b, tween substrate normal and lamellar stacking direction. For all
Supporting Information). Nevertheless, IT-4F shows slightly blend films, polymer donors present edge-on dominant orienta-
increased molecular stacking without obvious change in absorp- tion as the apparently higher intensity from 0 to 35°. Interest-
tion spectra after aging. Moreover, we focus on the (11-1) peaks ingly, the aged D18 and PM6 in Y6 blend films show increased
of Y6 as this molecular arrangement has been proved to facilitate face-on orientation in terms of the elevated intensity from 40 to
to vertical charge transport.[31] In D18:Y6 blend, the (11-1) peaks 90°, while annealing has no clear impact on the orientation of
shift from 0.42 to 0.40 Å−1 (d-spacing increase from 14.81 to PM6 in IT-4F blend. To quantitatively analyze orientation change,
15.74 Å) with CL decreasing from 6.23 to 5.90 nm after aging. we calculated the proportion of face-on and edge-on stacking.
The (11-1) peaks in PM6:Y6 blend locate at 0.44 and 0.43 Å−1 Both face-on proportion of D18 and PM6 after annealing in-
(d-spacing of 14.04 and 14.57 Å) before and after aging with crease from 6.86% to 10.97% and from 20.41% to 24.75%, re-
CL of 11.7 and 20.90 nm. As for the polymer donors in blends, spectively, while PM6 in IT-4F blend shows barely face-on tran-
the (100) peak of D18 locates at 0.30 Å−1 (d-spacing of 20.73 Å) sition from 15.81% to 15.94%. As for the acceptor orientation
with enhanced CL from 7.05 to 8.76 nm, while (100) CL of PM6 based on (010) pole figures, Y6 molecules present slightly en-
increases from 11.63 to 13.69 nm. The (100) CL of PM6 in IT-4F hanced face-on orientation after aging, which is confirmed by
blend increases from 22.27 to 26.94 nm, which are significantly the face-on proportion from 90.43% to 93.67% in D18:Y6 and

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Figure 5. a) GIWAXS 1D line-cuts along in-plane (IP) and out-of-plane (OOP) direction of fresh and aged films for D18:Y6, PM6:Y6 and PM6:IT-4F
blends, (100) and (010) pole figures of fresh and aged films for b) D18:Y6, c) PM6:Y6 and d) PM6:IT-4F blends, distribution of frontier molecular orbitals
(HOMO) for e) edge-on and f) face-on D18 monomers at B3LYP/6-31G level of theory.

from 92.18% to 93.40% in PM6:Y6. IT-4F maintains stable face- (Figure 5e,f; Figure S12, Supporting Information). It is promi-
on orientation from 86.14% to 86.05%. Overall, the polymers in nent to see less HOMO energy of −4.77 eV for face-on packing
Y6 blend present strikingly molecular orientation transition from D18 molecules with increased 𝜋–𝜋 stacking compared to edge-
edge-on to face-on after aging, while PM6 and IT-4F maintain on (−4.85 eV), which correlates molecular orientation with
their original orientations with negligible change. energy level and confirms the upshifted HOMO level in UPS
Molecular orientation can effectively alter the energy level results.
of conjugated molecules by affecting electronic polarization After investigating the molecular packing and orientation
direction and electrostatic interaction,[53–55] whereas orienta- change, we turned to miscibility and phase separation character-
tion dependent polarization energy quantitatively determines ization. First, contact angle measurements were conducted for
the energy level of solid film.[56] Since D18 exhibits obvious pure donor and acceptor films as shown in Figure S13 and Table
energy level shifting after orientation transition, we further S4 (Supporting Information). The corresponding Flory-Huggins
introduced density functional theory (DFT) simulation on interaction parameters (𝜒) of D18:Y6, PM6:Y6 and PM6:IT-4F
simplified D18 monomers without side-chain to evaluate their were calculated to be 0.74, 0.45 and 0.99, respectively. A small 𝜒
frontier molecular orbitals in edge-on and face-on orientation of PM6:Y6 blend denotes highly miscible nature, while PM6 and

Table 2. Morphology parameters for fresh and aged blend films based on GIWAXS and RSoXS scattering curves fitting.

Sample In-plane (100) Out-of-plane (010) Domain size Relative


/nm domain
Location/Å−1 d-spacing/Å CL/nm Location/Å−1 d-spacing/Å CL/nm purity

D18:Y6 Fresh 0.303 20.73 7.05 1.741 3.61 2.75 17.6 1.00
Aged 0.300 20.90 8.76 1.754 3.58 3.06 25.2 0.74
PM6:Y6 Fresh 0.295 21.29 11.63 1.751 3.59 2.53 27.0 1.00
Aged 0.295 21.29 13.69 1.764 3.56 3.00 34.1 0.83
PM6:IT-4F Fresh 0.298 21.07 22.27 1.749 3.59 2.38 45.6 0.88
Aged 0.295 21.29 26.94 1.750 3.59 2.53 41.4 1.00

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Figure 6. RSoXS 1D profiles of fresh and aged films for a) D18:Y6, b) PM6:Y6, and c) PM6:IT-4F blends, molecular conformation side view of d) edge-on
D18 with Y6, e) face-on D18 with Y6 and f) edge-on D18 with IT-4F from DFT calculation at GGA/BLYP level of theory.

IT-4F are prone to form large phase separation morphology due the prominent orientation transition, but no orientation transi-
to the largest 𝜒 value. tion in an immiscible IT-4F-based blend. These suggest differ-
Then, resonant soft X-ray scattering (RSoXS) measurements ent polymer:NFA combinations exhibit distinct impact on orien-
were applied to analyze the phase separation for fresh and aged tation change after aging. It is rational to infer that the molec-
blend films. Figure 6a–c plot the RSoXS profiles acquired at ular orientation transition in aging blend can be correlated to
285.2 eV X-ray exposure for desired material contrast. The log- intermolecular interaction induced demixing.[58] We attempt to
normal distribution scattering peaks denote the length scale verify this argument by DFT simulation for the interaction be-
of phase separation, which need to be contrasted with surface tween orientated D18 and two NFAs. The molecular electrostatic
roughness acquired at 270 eV (Figure S14, Supporting Informa- potential (ESP) maps of them were calculated and show reverse
tion). We noted that the peak positions of Y6-based films shift to ESP values of D18 and acceptors at the conjugated planes in
lower q after aging, indicating increased phase separation. The Figure S15 (Supporting Information), which suggest stronger in-
quantitative domain sizes were calculated (Table 2) to be 17.6 and termolecular interaction for parallel arrangement of D/A conju-
25.2 nm for fresh and aged D18:Y6 blends, and increase from gated planes. Then, we calculated the intermolecular binding en-
27.0 to 34.1 nm for PM6:Y6 blends. The larger domain size of ergy (EInt ) between edge-on/face-on D18 with two acceptors. As
PM6:Y6 can be attributed to the addition of CN in spite of its shown in Figure 6d,e, it is no doubt that edge-on D18 presents
smallest 𝜒. Moreover, the relative domain purities before and smaller EInt of −5.94 kJ mol−1 with Y6 than face-on D18 with Y6
after aging were evaluated to be from 1.00 to 0.74 for D18:Y6 (−7.42 kJ mol−1 ), indicating lower interaction between edge-on
and from 1.00 to 0.83 for PM6:Y6, which indicates to form more D18 with Y6 and tending to demix and transform into face-on
mixed but large-size phases after long time annealing. As for with higher interaction. As for edge-on D18 blending with IT-4F,
PM6:IT-4F, the fresh and aged films present domain sizes of the larger EInt of −6.62 kJ mol−1 suggests their stronger inter-
45.6 and 41.4 nm prominently larger than the Y6 counterparts, molecular interaction and stable phase behavior during thermal
agreeing with the largest Flory-Huggins interaction parameter. aging.
Although no domain size enlarges after annealing, the relative
domain purity of this blend increases from 0.88 to 1.00. We think
it is due to the annealing temperature is still lower than the Tg of 2.4. Degradation Mechanism Discussion
IT-4F (≈170 °C),[57] which only allows local molecular ordering
forming purer domains instead of phase coarsening. Having the photoelectric and morphological results, we attempt
We noticed that the phase separation change is consistent with to correlate them together to analyze the underlying reason of
the extent of orientation transition in three blends, in which Y6- thermal degradation in Y6-based devices that VOC and FF losses
based blends with the large domain size enhancements show leading predominate parameter decay rather than JSC (depicted

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Figure 7. Scheme of morphology change induced thermal degradation.

in Figure 7). Considering the VOC degradation, prominently re- short-circuit the charge transportation channels. And their do-
duced Vbi and increased non-radiative recombination loss were main sizes are slightly exceeding the ideal phase separation size
simultaneously probed to interpret voltage loss of aged Y6-based but within the large exciton diffusion length in Y6 blends,[60,61]
devices. Taking account of the morphology change, molecular which ensures sufficient photocurrent generation and prevents
orientation transitions of polymer donors appear from edge-on drastic JSC loss. Thus, it would be rational to acknowledge that
to face-on after aging. The increasing face-on orientations of D18 thermal induced crystallization and phase separation are not the
and PM6 result in upshifted HOMO levels then lower Vbi af- reason for Y6-based device degradation. On the contrary, the an-
ter aging. Meanwhile, more face-on orientation alignment can nealing temperature of 140 °C span a polymorphic phase tran-
lead to higher non-radiative recombination then larger energy sition of IT-4F, which can be confirmed by increased purity but
loss, which is interpreted that face-on with larger electronic cou- slightly decreased domain size. This results in relatively larger
pling induces more charge recombination via charge-transfer JSC loss, even if the Tg of IT-4F is much higher than Y6. The
state decay.[59] Besides, the enhanced molecular stacking are well- polymorphic effect of IDTT-based NFAs has been reported to im-
known factors in lowering device voltage. As for PM6:IT-4F films, pact device performance and stability by our previous work and
thermal aging show very little impact on molecular orientation elsewhere.[26,62]
enabling fairly stability of aged devices.
The FF loss is primarily derived from drastic decay of electron 3. Conclusion
mobility in aged devices. Since the (11-1) packing of Y6 shows
prominent correlation with charge mobility and FF according to In summary, the thermal stability of Y6-based OSCs was carefully
Liu et al.’s work,[31] we notice the reduced CL (Table S5, Support- investigated to uncover the degradation mechanism in compar-
ing Information) in D18:Y6, indicating less (11-1) packing and ison with PM6:IT-4F. Instead of JSC decay, D18:Y6 and PM6:Y6
smaller crystallite size after aging. This is probably due to the devices exhibit drastic VOC and FF losses under 140 °C annealing,
demixing and strong aggregation of D18 which breaks the inter- resulting in larger device performance degradation. The device
penetrating packing network of Y6 into dispersed crystallites in characterizations before and after aging reveal prominent built-in
terms of lower domain purity. Such unfavorable morphology is potential decline and strong non-radiative loss in aged Y6-based
detrimental to electron transportation, leading to the most dra- devices leading to the VOC loss. Meanwhile, great electron mobil-
matic mobility and FF decay in the corresponding devices. The ity depression can be found to suggest the degradation of FF. To
increased (11-1) CL and lower purity of aged PM6:Y6 suggest less correlate the photoelectric properties deterioration with thermal
impact of demixing on Y6 packing, resulting in less mobility and induced morphology change, we further carried on morphology
FF degradation. The slightly degraded FF in aged PM6:IT-4F is characterizations. Although molecular stacking and phase sepa-
ascribed to more trap-assistant recombination due to local demix- ration are enhanced after annealing, the polymer molecular ori-
ing in terms of increased domain purity. entation turning from edge-on to face-on and D/A orientation
The JSC degradation, which is common in other systems, is alignment are the critical factors affecting energy level and built-
barely observed in Y6-based devices during thermal stability test. in potential which ultimately lower the VOC of devices. More-
Referring to GIWAXS and RSoXS results, the molecular order- over, the FF degradation is due to the isolated NFA phases breaks
ing and domain size are apparently enhanced after long-time the electron transportation channel. Our investigation elucidate
annealing above the Tg of Y6. Nevertheless, the crystallites in the thermal degradation mechanism in efficient Y6-based devices
Y6-based blends neither damage the optimized morphology nor and correlated with thermal induced morphology change, which

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