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IRFR220A Datasheet
IRFR220A Datasheet
FEATURES
BVDSS = 200 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
RDS(on) = 0.8 Ω
Lower Input Capacitance ID = 4.6 A
Improved Gate Charge
Extended Safe Operating Area
D-PAK I-PAK
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 0.626 Ω (Typ.) 2
1
1
2
3 3
Thermal Resistance
Symbol Characteristic Typ. Max. Units
R θJC Junction-to-Case -- 3.14
o
RθJA Junction-to-Ambient * -- 50 C/W
RθJA Junction-to-Ambient -- 110
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
Notes ;
O Repetitive Rating : Pulse Width Limited by Maximum Junction
1 Temperature
L=5mH, I AS=4.6A, V DD=50V, R G=27Ω, Starting T J =25 C
o
O2
[A]
10 V
8.0 V
7.0 V
ID , Drain Current
ID , Drain Current
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
150 oC
100
25 oC
@ Notes :
1. VGS = 0 V
@ Notes : 2. VDS = 40 V
10-1 - 55 oC
1. 250 µs Pulse Test 3. 250 µs Pulse Test
2. TC = 25 oC
10-1
10-1 100 101 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]
[A]
Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
Drain-Source On-Resistance
2.0
IDR , Reverse Drain Current
101
1.5 VGS = 10 V
RDS(on) , [Ω]
1.0
100
VGS = 20 V
0.5
@ Notes :
150 oC 1. VGS = 0 V
o
@ Note : TJ = 25 oC 25 C 2. 250 µs Pulse Test
0.0 10-1
0 3 6 9 12 15 18 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ID , Drain Current [A] VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
500
[V]
VDS = 100 V
C iss
VDS = 160 V
Capacitance
300
200 C oss 5
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
C rss
100
@ Notes : ID = 5.0 A
00 0
10 101 0 3 6 9 12
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
N-CHANNEL
IRFR/U220A POWER MOSFET
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
BVDSS , (Normalized)
RDS(on) , (Normalized)
2.5
1.1
2.0
1.0 1.5
1.0
0.9 @ Notes : @ Notes :
1. VGS = 0 V 1. VGS = 10 V
0.5
2. ID = 250 µA 2. ID = 2.5 A
0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC] TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
5
[A]
[A]
ID , Drain Current
101 100 µs
1 ms 3
10 ms
DC
2
100
@ Notes :
1. TC = 25 oC 1
2. TJ = 150 oC
3. Single Pulse
10-1 0
100 101 102 25 50 75 100 125 150
VDS , Drain-Source Voltage [V] Tc , Case Temperature [ oC]
D=0.5
100
0.2 @ Notes :
1. Z J C (t)=3.14 o C/W Max.
θ
0.1 2. Duty Factor, D=t1 /t2
0.05 3. TJ M -TC =PD M *Zθ J C (t)
Z JC(t) ,
“ Current Regulator ”
VGS
Same Type
50KΩ as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
R1 R2
RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off
RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
N-CHANNEL
IRFR/U220A POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT +
VDS
--
IS
L
Driver
VGS
RG Same Type
as DUT VDD
IRM
Vf VDD
Body Diode
Forward Voltage Drop
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.