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Q. Which is not mechanical wave
fuEu esa ls dkSu ;kaf=d rjax ugha gS
A. Longitudinal wave@vuqnS/;Z rjax
B. Transverse wave @vuqizLFk rjax
C. Sound wave @/ofu rjax
D. Light wave or electromagnetic wave @izdk'k rjax ;k fo|qr pqEcdh; rjax
Q. Light is @izdk'k gS
A. Longitudinal wave@vuqnS/;Z rjax
B. Transverse wave @vuqizLFk rjax
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. Sound is @/ofu gS
A. Longitudinal wave @vuqnZ/;Z rjax
B. Transverse wave @vuqizLFk rjax
C. Both of Above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. Longitudinal waves when travels in medium, then in medium
vuqnS/;Z rjaxs tc ek/;e esa pyrh gS rks ek/;e esa
A. Compression & rarefaction are formed in alternate order laihMu vkSj fojyu
,dkarj Øe esa curs gS
B. Crest & troughs are formed in alternate order @J`ax vkSj xrZ ,dkarj Øe esa curs gS
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. Transverse waves when travels in medium, then in medium
vuqizLFk rjaxs tc ek/;e esa pyrh gS rks ek/;e esa
A. Compression & rarefaction are formed in alternate order
laihMu vkSj fojyu ,dkarj Øe esa curs gS
B. Crest & troughs are formed in alternate order @Ja`x vkSj xrZ ,dkarj Øe esa curs gSa
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. Electromagnetic waves (EM) when travels in medium, then in medium
pqEcdh; rjaxs (EM waves) tc ek/;e esa pyrh gS rks ek/;e esa
A. Compression & rarefaction are formed in alternate order @laihMu vkSj fojyu
,dkarj Øe esa curs gSa
B. Crest & troughs are formed in alternate order @J`ax vkSj xrZ ,dkarj Øe esa curs gSa
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. Two springs of force constants 10N/m are connected vertically in series combination.
Equivalent force constant K is
10N/m cy fu;rakd ds nks fLizax m/kZok/kj Js.kh Øe esa tqM+s gSA rqY; cy fu;rakd dh x.kuk
dhft,
A. 10N/m
B. 20N/m
C. 5N/m
D. 100N/m
Q. What is relation between phase difference and path difference
dkykUrj vkSj iFkkarj esa D;k laca/k gksrk gS
A. Df = 2p . Dx
B. Df = (2p / l)Dx
C. Df = (2pl)Dx
D. Df = (l / 2p)Dx
Q. On increasing the effective length l of simple pendulum, time period will
ljy yksyd dh izHkkodkjh yackbZ c<+kus ij mldk vkorZ dky
A. Increases @c<+rk gS
B. Decreases @?kVrk gS
C. Constant @fLFkj jgrk gS
D. None of above @mijksDr dksbZ ugha
Q. What are Coherent Light Sources
dyk lac¼ izdk'k L=ksr D;k gSA
A. Same frequency, same wavelength but variable phase difference
leku vko`fRr] leku rjaxnS/;Z ijarq ifjorhZ dykarj
B. Same frequency, same wavelength and constant phase difference
leku vko`fRr] leku rjaxnS/;Z vkSj fu;r dykarj
C. Both are correct
D. None of above
Q. What are incoherent Light Sources
dyk vlac¼ izdk'k L=ksr D;k gS
A. Same frequency, same wavelength but variable phase difference @leku vko`fRr]
leku rjaxnS/;Z ijarq ifjorhZ dykarj
B. Same frequency, same wavelength and constant phase difference @leku vko`fRr]
leku rjaxnS/;Z vkSj fu;r dykarj
C. Both are correct
D. None of above
Q. Width of Principal or Central maxima in diffraction is
foorZu esa eq[; mfPp"B dh pkSM+kbZ gS
A. Dl/d
B. 2Dl/d
C. Dl/2d
D. Dl/d
Q. Width of secondary maxima in diffraction is
foorZu esa f}rh;d mfp"B dh pkSM+kbZ gSA
A. Dl/2d
B. 2Dl/d
C. Dl/d
D. 2Dl/d
Q. What is double refraction
f}viorZu D;k gSA
A. Two rays combine into one ray after refraction from crystal
nks fdj.ks fØLVy ls viofrZr gksdj ,d fdj.k gks tkrh gSaA
B. One ray splits into two ray after refraction from crystal
,d fdj.k fØLVYk ls viofrZr gksdj nks fdj.kksa esa foHkDr gks tkrh gS
C. Both of above
D. None of above
Q. If refractive index of glass is 3, then what will be the polarizing angle i p
;fn dkap dk viorZukad 3 rks /kzqo.k dks.k i p dh x.kuk dhft,A
A. 30°
B. 45°
C. 60°
D. 90°
Q. Which is relation for refractive index
viorZuk¡d ds fy, dkSu lk lgh laca/k gS
A. 2n1=n 2/n1
B. 2n1=n1/n 2
C. Both of above
D. None of above
Q. Destructive interference is formed where two coherent rays have phase difference &
path difference
fouk"kh O;frdj.k gksrk gS tgka nks dyk lac¼ fdj.kksa ds chp dykarj o iFkkarj gksrk gS
A. 2np & nl
B. (2n-1)p & (2n-1)l/2
C. Both of above
D. None of above
Q. Destructive interference is formed where intensity of light becomes
fouk"kh O;frdj.k gksrk gS tgka izdk'k dh rhozrk gks tkrh gSA
A. Maximum @vf/kdre
B. Minimum @U;wure
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. In interference, on increasing the wavelength (l) of coherent light used, fringe width
will
O;frdj.k esa iz;qDr dyk lac¼ izdk'k dh rjaxnS/;Z (l ) c<+kus ij fQzat pkSM+kbZ gksxhA
A. Increase @c<+ tk,xh
B. Decrease @?kV tk,xh
C. Unchanged @ifjofrZr ugha gksxh
D. None of above
Q. Which electric charge is not possible
dkSu lk fo|qr vkos'k laHko ugha gS
(e=1.6×10 -19 coulomb)
A. e
B. 2e
C.½e
D. 3e
Q. Two charges of 1 Coulomb each are placed at 1 meter distance from each other. How
much Coulomb force they exert on each other.
(,d ,d dwyke ds nks vkos'k ,d nwljs ls 1 ehVj nwjh ij j[ks x, gSa muds chp yxus okyk
dwyke cy fdruk gksxkA)
A. 9 Newtons
B. 9 × 1019 Newtons
C. 9 × 1010 Newtons
D. 9 × 10 9 Newtons
Q. What is true about electric lines of force
fo|qr cy js[kkvksa ds fy, D;k lR; gSA
A. Smooth curve @fu"dks.k oØ
B. Imaginary line @dkYifud js[kk,a
C. Do not cross each other @,d nwljs dks dkVrh ugha gS
D. All of above @mijksDr lHkh
Q. Intensity of electric field E at any point depends upon
fdlh fcanq ij fo|qr {ks= dh rhozrk fuHkZj djrh gSA
A. On charge @vkos'k ij
B. Distance of point from charge @vkos'k ls ml fcanq dh nwjh
C. On medium @ek/;e ij
D. All of above @mijksDr lHkh
Q. Capacitance of Parallel Plate Capacitor C depends on
lekarj IysV la/kkfj= dh /kkfjrk C fuHkZj djrh gSA
A. Area of Plates IysVksa ds {ks=Qy A
B. Distance between two plates nksuksa IysV ds e/; nwjh d
C. Dielectric constant of material @ek/;e ds ijkoS|qrkad K
D. All of above @mijksDr lHkh
Q. Electric flux is defined as
fo|qr Q~yDl ifjHkkf"kr gS
A. Number of electric lines @fo|qr js[kkvksa dh la[;k
B. Number of electric lines per unit volume ,dkad vk;ru esa fo|qr cy js[kkvksa dh
la[;k
C. Number of electric lines passing perpendicularly through the surface@fdlh lrg
ls yacor xqtjus okyh fo|qr cy js[kkvksa dh la[;k
D. None of above @mijksDr dksbZ ugha
Q. Parallel plate capacitor consists of
lekUrj IysV la/kkfj= cukrk gSA
A. Two plates of equal area kept in contact
leku {ks=Qy dh nks IysVsa ,d nwljs ls lVkdj j[kh tkrh gSaA
B. Two plates of equal area kept parallel to each other with some separation
leku {ks=Qy dh nks IysVsa ,d nwljs ds lekUrj dqN nwjh ij fLFkr gksrh gSaA
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. If dielectric plate is inserted between plates of parallel plate capacitor, capacitance
;fn lekUrj IysV la/kkfj= dh IysVksa ds e/; ijkoS|qr iV~Vh j[k nh tkrh gS rks /kkfjrk
A. Decreases @?kVk tkrh gS
B. Increases @c<+ tkrh gS
C. Unchanged @vifjofrZr jgrh gS
D. None of above @mijksDr dksbZ ugha
Q. If charge on parallel plate capacitor is 1 Coulomb, potential difference across plates is
10 Volt and separation between plates is 1 mm, then calculate electric field between
plates.
;fn lekUrj IysV la/kkfj= ij 1 dwyke vkos'k] IysVksa ds e/; foHkokarj 10 oksYV rFkk IysVksa ds
e/; nwjh 1 feeh0 gS rks IysVksa ds e/; fo|qr {ks= dh x.kuk dhft,A
A. E=1 Volt/m (E=1oksYV@eh0)
B. E=10 -1 Volt/m (10 -1 oksYV@eh0)
C. E=10 -2 Volt/m (10 -2 oksYV@eh0)
D. E=10 4 Volt/m (10 4 oksYV@eh0)
Q. The device which maintains or supply energy for flow of charges in circuit is called
;qfdr] tks fdlh ifjiFk esa vkos'kksa ds izokg dks cuk, j[krh gS ;k vkos'kksa ds izokg ds ÅtkZ nsrh
gS] dgykrh gS
A. Electric Resistance @fo|qr izfrjks/k]
B. Electric conductor @fo|qr pkyd
C. Electric Cell @fo|qr lsy
D. All of above @mijksDr lHkh
Q. Direction of conventional electric current is
ijaijkxr fo|qr /kkjk dh fn'kk gksrh gS
A. In direction of flow of Electrons @bysDVªksuksa ds izokg dh fn'kk esa
B. In opposite direction of flow of Electrons @bysDVªkuksa ds izokg dh foijhr fn'kk esa
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
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Q. In any circuit, 1.6×10 19 electrons flows in 5 sec. Calculate electric current.
fdlh ifjiFk esa 5 lsdsaM esa 1 .6 ´ 1019 bysDVªkWu izokfgr gksrs gSa] izokfgr fo|qr /kkjk dh x.kuk
dhft,A
A. 1A (1 ,fEi;j)
B. 2A (2 ,fEi;j)
C. 0.2A (0.2 ,fEi;j)
D. 0.51A (0.51 ,fEi;j)
Q. What is EMF electromotive force E of a cell
fdlh lsy dk fo|qr okgd cy E D;k gksrk gS
A. It is not a force @;g dksbZ cy ugha gksrk gS
B. It is energy given to unit charge by cell to flow in circuit @;g fdlh ifjiFk esa ,dkad
vkos'k dks izokfgr djus ds fy, lsy }kjk nh xbZ ÅtkZ gksrh gS (E = W/q)
C. It is potential difference between electrodes of cell when no current is
drawn from cell @;g lsy ds bysDVªksM ds chp vf/kdre foHkkoarj gksrk gS tc lsy ls
dksbZ /kkjk u yh tk jgh gks
D. All of above @mijksDr lHkh
Q. On increasing temperature of conductor, resistance R of conductor
fdlh pkyd dk rkieku c<+kus ij mldk izfrjks/k R
A. Decreases ?kVrk gS
B. Increases c<+rk gS
C. Remains unchained fLFkj jgrk gS
D. None of above mijksDr dksbZ ugha
Q. On increasing cross section area A of conductor, resistance of conductor
fdlh pkyd ds vuqizLFk dkV dk {ks=Qy A c<+kus ij pkyd dk izfrjks/k
A. Increases @c<+rk gS
B. Decreases @?kVrk gS
C. Remains unchained @vifjofrZr jgrk gS
D. None of above @mijksDr dksbZ ugha
Q. What is critical temperature Tc of conductor
pkyd dk ØkfUrd rkieku Tc D;k gksrk gSA
A. At which resistance of conductor becomes infinite @ftl rkieku ij pkyd dk
izfrjks/k vuar gks tkrk gS
B. At which resistance of conductor becomes zero @ftl rkieku ij pkyd dk
izfrjks/k 'kwU; gks tkrk gS
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. What is Meissner effect
esluj izHkko D;k gksrk gS
A. When superconductor is placed in magnetic field, magnetic field lines do not
cross the superconductor @vfrpkyd dks tc pqEcdh; {ks= esa j[kk tkrk gS rks
pqEcdh; cy js[kk,a vfrpkyd dks ikj ugha dj ikrh gSa
B. Magnetic field lines bend outside the superconductor pqEcdh; cy js[kk,a
vfrpkyd ds ckgj eqM+ tkrh gS
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. On which principle, Kirchhoff's voltage law (KVL) is based
fdjpkSQ dk oksYVrk fu;e fdl fl¼kar ij vk/kkfjr gS
A. Principle of Conservation of momentum @laosx laj{k.k fl¼kar ij
B. Principle of Conservation of charge @vkos'k laj{k.k fl¼kar ij
C. Principle of Energy of charge @ÅtkZ laj{k.k fl¼kar ij
D. Principle of Conservation of angular momentum @dks.kh; laosx laj{k.k fl¼kar ij
Q. Range of Carbon composition resistors is
dkcZu feJ.k izfrjks/k dh ijkl D;k gksrh gS
A. 1W to 100W
B. 1W to 1KW
C. 1W to 1MW
D. 1W to 22MW
Q. In any solid, lowest empty band is called
fdlh Bksl esa fuEury [kkyh ÅtkZ Lrj dgykrk gS
A. Valence band @la;ksth cSaM
B. Conduction band @pkyu cSaM
C. Forbidden energy gap @oftZr ÅtkZ varjky Eg
D. All of above @mijksDr lHkh
Q. Energy band gap Eg for conductor or metal is
pkyd ;k /kkrq ds fy, ÅtkZ cSaM varjky gksrk gS
A. E g =0
B. E g =1eV
C. E g =7eV
D. None of above
Q. Energy band gap E g for semiconductors silicon (Si) and germanium (Ge) is
respectively Si Ge
v/kZpkydksa flfydkWu Si vkSj tesZfu;e Ge ds fy, ÅtkZ cSaM varjky Øe'k% gskrk gS
A. 0 & 0
B. 0.67eV & 1.12eV
C. 1.12eV & 0.67eV
D. None of above
Q. Temperature coefficient of resistance a of semiconductor is always
v/kZpkyd dk izfrjks/k dk rki xq.kkad a ges'kk gksrk gS
A. Positive @/kukRed
B. Negative @½.kkRed
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. P-type semiconductors are made from
P-Vkbi v/kZpkyd cuk, tkrs gSa
A. By adding trivalent impurity atoms (Al, B, In etc.) in intrinsic semiconductor @fut
v/kZpkydksa esa rhu la;kstdrk okys v'kqf¼ ijek.kq (Al, B, In etc.) feykus ls curs gSaA
B. By adding pentavalent impurity atoms (P, Sb, As etc.) in intrinsic semiconductor
fut v/kZpkydksa esa ikap la;kstdrk okys v'kqf¼ ijek.kq (P, Sb, As etc.) feykus ls curs
gSa
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. Value of potential barrier V B for silicon PN junction PN
flfydkWu ds PN laf/k ds fy, foHko izkphj VB ds eku gksrk gS
A. 0.3 Volt
B. 0.7 Volt
C. 1 Volt
D. 10 Volt
Q. In forward biasing of diode, forward current is due to
Mk;ksM dh vxz vfHkufr esa vxz /kkjk gksrh gS
A. Due to majority charge carriers @cgq la[;d vkos'k okgdksa ds dkj.k
B. Due to minority charge carriers @vYi la[;d vkos'k okgdksa ds dkj.k
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. What is knee or offset voltage of diode
Mk;ksM dk uh ;k vkWQlsV foHko gksrk gSA
A. In reverse biased, the voltage at which reverse current become non zero@Mk;ksM ds
mRØe vfHkur esa foHko ftl ij mRØe /kkjk v'kqU; gks tkrh gS
B. In forward biased, the voltage at which forward current become non zero@Mk;ksM
ds vxz vfHkur esa fOkHko ftl ij vxz /kkjk v'kqU; gks tkrh gS
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. What is zener diode
thuj Mk;ksM D;k gS?
A. It is a low doped PN junction diode PN
;g fuEu MksIM PN laf/k Mk;ksM gksrk gS
B. It is a highly doped PN junction diode PN
;g mPp MksIM PN laf/k Mk;ksM gksrk gS
C. Both of above @mijksDr nksuksa
D. None of above @mijksDr dksbZ ugha
Q. Emitter of transistor is
VªkaftLVj dk mRltZd gksrk gS
A. Highest doped @mPpre v'kqf¼ okyk
B. Source of charge carriers @vkos'k okgdks dk L=ksr
C. Intermediate in size @e/;e vkdkj dk
D. All of above @mijksDr lHkh
Q. VsLyk dh ,d bdkbZ gSa
Tesla is a unit of?
(a) {ks= dh rked/field strength
(b) vf/k"Bkiu@inductance
(c) izokg ?kuRo@Flux density
(d) izokg@flux
Q. ,d pqacdh; {ks= pkjks vksj ekStwn gS
A magnetic field exists around
(a) yksgk@Iron
(b) rkack@Copper
(c) ,Y;weh/ku;e@Aluminium
(d) x/kreku vkos'k@moving charges
Q. ,d eSDlosy cjkcj gksrk gS
One maxwell is equal to
(a) 10 osclt@10 webers
(b) 15 osclt@15 webers
(c) 20 osclt@20 webers
(d) None of the above]
Q. Temporary magnets are used in
vLFkk;h pqEcd dk iz;ksx esa fy;k tkrk gS
(A) Loudspeakers/ykmMLihdj esa
(B) Generators/tsujsVj esa
(C) Motors/eksVlZ esa
(D) All of the above/
Q. Nono materials are the materials with at least one dimension measuring less than
………
uSukseVsfj;Yl de ls de ,d vk;ke okyh lkexzh …… ls de ekirs gSa
(a) 1 nm
(b) 10 nm
(c) 100 nm
(d) 1000 nm
Q. The colour of the nano gold particles is ………
uSuks lksus ds d.kksa dk jax ……… gksrk gSA
(a) Yellow/ihyk
(b) Orange/ukjaxh
(c) Red/yky
(d) Variable/ifjorZuh;
Q. Phonons are ………
Qksuu ……… gSa
(a) Quanta of energy/ÅtkZ dh ek=k
(b) Quanta of light waves/izdk'k rjaxksa dk dkaVk
(c) Quanta of sound waves//ofu rjaxks dk dkaVk
(d) Quanta of heat/Å"ek dh ek=k
Q.. He-Ne laser is a type of ………
He-Ne ystj ,d izdkj dk ……… gS
(a) Solid laser/Bksl ystj
(b) Liquid laser@rjy ystj
(c) Gas laser/xSl ystj
(d) Diode laser/Mk;ksM ystj