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JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Design, Fabrication, and Characterization of
High-Performance PMUT Arrays Based
on Potassium Sodium Niobate
Lei Zhao , Chong Yang , Xinyue Zhang , Zhiwei You , and Yipeng Lu , Senior Member, IEEE
Abstract— The demand for high-performance lead-free
piezoelectric ultrasound transducers has grown significantly,
driven by their applications in implantable, biocompatible
medical devices and environmentally friendly consumer
electronics. In this study, we present the design, fabrication, and
characterization of arrays of lead-free (K, Na)NbO3 (KNN)-based
piezoelectric micromechanical ultrasonic transducers (PMUTs)
with a center frequency of 4.7 MHz in liquid and 5.85 MHz in air.
High-quality KNN thin film (FWHM of 0.32◦ , e31, f = −12 C/m2 ,
ϵ r = 1200) was deposited via physical vapor deposition (PVD) and
patterned using an optimized wet etching process with an oxide
layer as a mask. Additionally, we obtained a −6 dB fractional
bandwidth of 95.7% through optimizing layer stacks and
transducers mutual acoustic impedance based on finite element
model (FEM) and lumped element model (LEM) methods.
We achieved high transmitting performance of 3.8 kPa/V at 3 cm
away from a PMUT super-pixel (with an area of 0.278 mm2 ,
consisting of 3 × 12 PMUTs). The measured transducer
performance is comparable to previous PMUTs based on PZT
(lead-included) thin films and demonstrates the potential of
KNN-based PMUTs in future advanced applications.[2024-0005]
Index Terms— Ultrasonic transducer, PMUT, KNN, band-
width, wet etch, lead-free.
I. I NTRODUCTION
U LTRASONIC technology has played a pivotal role in
diverse applications, particularly in fields of medical
applications, consumer electronics, etc. One of the key compo-
nents in ultrasonic systems is the transducer, which converts
electrical energy into mechanical vibrations and vice versa.
Traditionally, transducers are mostly made of lead-containing
piezoelectric ceramics like lead zirconate titanate (PZT)
[1], [2], lead magnesium niobate–lead titanate (PMN-PT)
[3], [4] and lead magnesium niobate–lead indium niobate–lead
titanate (PIN–PMN–PT) [5], known for excellent piezoelectric
properties such as high piezoelectric coefficients and energy
conversion efficiency. However, their lead content has raised
environmental and health concerns, particularly in biocom-
patible and sustainable applications like medical implantable
ultrasound devices, which has led to a lead-free thin film.
Researchers have been exploring alternative materials with
Manuscript received 11 January 2024; revised 19 April 2024; accepted
19 April 2024. This work was supported by the National Key Research
and Development Program under Grant 2023YFEO209600. Subject Editor
E. S. Kim. (Corresponding author: Yipeng Lu.)
The authors are with the School of Integrated Circuits, Peking University,
Beijing 100091, China (e-mail: yplu@pku.edu.cn).
Color versions of one or more figures in this article are available at
https://doi.org/10.1109/JMEMS.2024.3395294.
Digital Object Identifier 10.1109/JMEMS.2024.3395294
1057-7157 © 2024 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
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1
comparable piezoelectric properties but without drawbacks of
the lead content. Ferroelectric materials with perovskite struc-
ture (ABO3 ), such as barium titanate (BT), potassium niobate
(KN), barium strontium zirconate titanate (BSZT) and potas-
sium sodium niobate (KNN) are promising lead-free piezo-
electric materials and have been used for traditional ultrasound
transducers as demonstrated by numerous studies [6], [7], [8].
However, traditional ultrasonic transducers operating in
thickness mode present several technical challenges, including
complexities in array formation, limitations in electrical rout-
ing, and inherently low bandwidth, which degrade their perfor-
mance in handheld medical imaging, implant ultrasound, and
consumer electronics. Alternative prototypes for traditional
ultrasonic transducers have emerged as promising technolo-
gies. Specifically, piezoelectric micromechanical ultrasonic
transducers (PMUTs) operating in flexural mode fabricated
through a lithography-based micro-electromechanical system
(MEMS) process have emerged as a promising technology.
PMUTs offer several significant advantages compared to
conventional transducers, which enable miniaturization, cost-
effectiveness, and ease of integration with complementary
metal-oxide-semiconductor (CMOS) technology, making them
a desirable option for various applications, such as medical
imaging [9], [10], [11], gesture recognition [12], range-finding
[13], [14], and fingerprint sensing [15].
Regarding piezoelectric thin films for PMUTs, researchers
have explored various options. Aluminum nitride (AlN)
thin film is lead-free but suffers from a low piezoelectric
coefficient (e31, f = −1.05 C/m2 ) and scandium-doped alu-
minum nitride (ScAlN) can improve piezoelectric coefficient
(e31, f = −2.3 C/m2 ) with Sc concentration 36% [16], [17].
Thin film lithium niobate (LiNbO3 ) is a biocompatible mate-
rial and needs a lateral-field for efficient flexural mode
excitation with a piezoelectric coefficient (e11 = 4.6 C/m2 ),
however suffering from a small intrinsic capacitance and easily
affected by parasitic capacitance [18]. PZT thin film can
have |e31, f | up to 10 to 18 C/m2 range but it is toxic and
not environment-friendly due to its lead content, limiting its
suitability for specific applications. Alternatively, potassium
sodium niobate (KNN) emerges as a promising lead-free
piezoelectric ceramic material with a high piezoelectric
coefficient (e31, f = −12 C/m2 ) [19], [20]. Its environment-
friendly characteristics and superior piezoelectric properties
make it an appealing choice for PMUT development [19],
[20], [21], [22]. Nevertheless, utilizing KNN in PMUTs
presents unique challenges, particularly in thin film fabrication
processing.
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2 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS

PVD-sputtered KNN film exhibits stable film quality and

effective stress control, but its etching behavior differs from
sol-gel thin film. Dry etching methods face challenges in
achieving high selectivity of KNN over the Pt electrode,
requiring thick mask layers and alternative bottom electrode
materials [23]. Conversely, wet etching holds promise, but
it must overcome specific challenges. Acidic wet etching
techniques prove inefficient in dense sputtered KNN films,
resulting in low etching rates. An alternative approach involves
using high-concentration hydrofluoric acid (HF) solutions in
wet etching processes, which can be hazardous and often
require using precious metal layers like platinum as hard
masks.
This paper demonstrated the design, fabrication, and char-
acterization of a lead-free KNN-PMUT array with a center
frequency of 4.7 MHz in liquid. A high transmitting pres-
sure of 3.8 kPa/V at 3 cm away form a super-pixel was
obtained, and this shows comparable performance with lead-
Fig. 1. (a) Schematic cross-section of a single PMUT cell. (b) Optical image
based materials. Further improvements in layer stacks and (bottom view) and (c) layout of a 1×32 super-pixel KNN-based PMUT array.
acoustic impedance optimization result in a remarkable -6 dB
fractional bandwidth of 95.7%. The effect of poling voltage TABLE I
on KNN-PMUTs has been experimentally verified and dis- FOM S OF P IEZOELECTRIC M ATERIALS [24]
cussed. Acoustic pressure maps were measured across various
planes, revealing a narrow beam width in the XZ plane.
Moreover, a safe and low-cost alkaline wet etching process
of PVD-sputtered KNN film was optimized and characterized
without use of precious metal masks. This research demon-
strates the potential of lead-free KNN as a promising material
in PMUT development and provides design, fabrication and
characterization of KNN-based PMUT array.

II. PMUT D ESIGN AND FABRICATION

A. PMUT Working Principle
The PMUT operates via the utilization of the piezoelectric
effect. A piezoelectric film, when subjected to an electrical
voltage, would generate ultrasonic waves and work in trans-
mitting mode. Similarly, when external pressure is applied,
this film undergoes deformation, leading to a variation in
electrical charge and working in receiving mode. This thin
film, sandwiched between two electrodes and deposited or
bonded on a passive layer, deforms the membrane under
voltage or external pressure, creating or sensing ultrasonic
waves as shown in Fig. 1 (a).
Fig. 1 (b) and Fig. 1 (c) present the optical image and
layout of a KNN-based PMUT array with 32 super-pixels
and a 270 µm pitch. Each super-pixel is comprised of
3 × 12 elements spaced with 10 µm interval. A detailed view
of a single super-pixel is provided in the inset. The design
of each element includes an 80 µm cavity and a 56 µm
diameter top electrode, strategically optimized for maximal
coupling efficiency. The array’s compact design serves two
primary purposes: it achieves a high fill factor (fractional
62% or 123 transducers/mm2 ) and optimizes the mutual
radiation impedance effect among elements within each super-
pixel, consequently enhancing the bandwidth, which will be
discussed in detail in the following sections.
B. FOM of Piezoelectric Materials
Three kinds of figures of metric (FOM) are used to evaluate
the transmitting, receiving, and overall performance of each
piezoelectric thin film. The transmitting sensitivity GTX and
sensing sensitivity GRX of a thin-film piezoelectric MEMS
device can be described as:
G T X ∝ e31, f (1)
G R X ∝ |d31 | /ε33 (2)
where e31, f and d31 are piezoelectric constants; ε33 the dielec-
tric constant. d31 is used here due to less availability of d31, f
of various piezoelectric films in literature.
The FOM of overall performance Gpulse−echo represent-
ing the transmitting and receiving capabilities of pulse-echo
method can be described as:
G pulse−echo = G T X × G R X (3)
Table I presents a comparison of commonly used piezoelec-
tric thin films in PMUTs, including PZT, AlN, ScAlN, and
KNN. PZT, known for its superior transmitting performance,
is however toxic due to its lead content. AlN, a lead-free
option, delivers receiving performance about twice that of
PZT but is limited in transmitting capabilities due to its
low piezoelectric coefficient e31, f . Sc doping improves AlN’s
overall performance, yet it still lags behind PZT in trans-
mission. KNN stands out as a practical, lead-free alternative,
offering transmitting performance comparable to the PZT, thus
emerging as a promising material for PMUTs.

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ZHAO et al.: DESIGN, FABRICATION, AND CHARACTERIZATION OF HIGH-PERFORMANCE PMUT ARRAYS 3

C. Film Thickness Optimization

Film thickness optimization is crucial in PMUT design,
as it significantly influences both the bending stiffness and the
piezoelectric bending moment of the overall membrane, using
transmitting performance as an example. For PMUTs working
in the flexural mode, a thinner film leads to decreased bending
stiffness, enhancing the film’s sensitivity to internal stresses
and external static acoustic pressure variations. Moreover, the
thickness of the piezoelectric layer demands equal attention,
and imbalanced thickness ratios between the piezoelectric and
elastic layers can reduce the piezoelectric bending moment,
adversely affecting the transducer’s electromechanical con-
version efficiency. Consequently, meticulous film thickness
optimization and the ratio between piezoelectric and elastic
layers are vital. Such optimization seeks to finely balance
between ensuring sufficient bending stiffness and maximizing
the piezoelectric bending moment, thereby enhancing the
overall performance of the transducer.
A finite element model (FEM) for steady-state analysis in
piezoelectric structural mechanics was developed to optimize
film thickness. In this model, the elastic layer primarily
consisted of silicon, with a carefully chosen thickness of 2 µm.
This thickness was strategically selected to balance minimizing
bending stiffness while ensuring robust mechanical strength.
Fig. 2 (a) shows simulation results of normalized transmitting
performance using different piezoelectric materials, as men-
tioned in the previous section. PZT and KNN, categorized as
perovskite materials, demonstrate outstanding transmitting per-
formance. The distinction between the two becomes minimal
when the thickness of the piezoelectric layer exceeds 1 µm,
possibly attributed to the lower Young’s modulus of KNN thin
films (YKNN = 65 GPa, YPZT = 70 GPa).
In film thickness optimization, the dielectric breakdown
of piezoelectric thin films needs to be considered, and their
breakdown voltage is positively correlated with thickness.
Fig. 2 (b) shows simulation results of normalized transmitting
sensitivity of KNN thickness with and without consideration
of dielectric breakdown. The results show that a thickness Fig. 2. (a) Simulation results of normalized transmitting sensitivity using
range of 0.9 to 1.4 µm is optimal for normalized transmitting different piezoelectric materials. (b) Simulation results of normalized trans-
performance with consideration of dielectric breakdown, mitting pressure with and without considering dielectric breakdown. The red
mark indicates the KNN thickness used in this work. (c) SEM image of the
with performance changes within 10% in this range. The used piezoelectric stack in cross-sectional view.
red mark denotes the specific KNN thickness employed in
this study. This selection considers both scenarios, resulting
in a thin membrane with reduced bending stiffness and extraction method for PMUT has been extensively described
effective mass, respectively, leading to a high transmitting in literature [26], [27], [28], [29], [30], [31].
sensitivity and broad bandwidth [25]. Fig. 2 (c) shows a Fig. 3 shows that normalized values of the simulated trans-
cross-section scanning electron microscope (SEM) image mitting pressure vary with different pixel sizes and intervals
of 0.9 µm-KNN/0.27 µm-Pt/0.02 µm-ZnO/2 µm-Si/ via PMUT-LEM. The simulated transmitting pressure in Fig. 3
0.5 µm-SiO2 piezoelectric substrate used in this work. KNN was obtained from the surface-averaged acoustic pressure
thin film was deposited by magnetron sputtering method and of all PMUT cells within a PMUT pixel, simulated in the
with a high piezoelectric coefficient (e31, f = −12 C/m2 ) liquid environment. Mutual radiation impedance has a notable
[19], [20]. impact, causing asymmetric vibration elements within the
super-pixel to display distinct performance frequency distribu-
D. PMUT Super-Pixel Design tions. As the pixel size enlarges, its sound pressure output and
The lumped element model (LEM) of PMUTs is estab- operation bandwidth experience a gradual increment, as shown
lished by representing the mechanical system’s compliance as in Fig. 3 (a). The pixel interval also significantly impacts
equivalent capacitance, mass as equivalent inductance, and the the performance of PMUT-grouped super-pixels. As the pixel
piezoelectric effect as an ideal transformer. Additionally, sound interval diminishes, the quality factor of the super-pixel
wave radiation and mass load are represented as radiation declines while the operation bandwidth increases, as shown
impedance. The mechanical and acoustic lumped parameters in Fig. 3 (b). Finally, the super-pixel structure, including

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4 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Fig. 3. Normalized values of the simulated transmitting pressure vary with
different pixel sizes (a) and intervals (b). The 3×12 super-pixel with a 10 µm
interval was chosen for final design.
Fig. 4. Fabrication process flow of KNN-based PMUT array based on
SOI wafers. (a) Customized SOI wafer with 2 µm device layer and 0.5 µm
buried oxide layer. (b) Seed layer, bottom electrode, and piezoelectric layer
deposition. (c) Via etching. (d) Top electrode lift-off. (e) Back grinding via
CMP. (f) Membrane release via DRIE.
3 × 12 elements with a 10 µm interval, was adopted for
maximum bandwidth and sufficient sound pressure output.
E. Fabrication of KNN-Based PMUT Array
Fig. 4 shows a simplified overview of the fabrication process
flow. The fabrication starts with a SOI wafer. A 20 nm zinc
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Fig. 5. Wet etching of KNN with an average etching rate of 12 nm/min.
Inset: optical image of the KNN-etched pattern (right) and corresponding
layout (left).
oxide (ZnO) layer was sputtered as a seed layer to enhance
crystal orientation. This facilitates the subsequent sputtering
of a (111)-textured platinum electrode, which has a thickness
of 270 nm. The oriented platinum electrode serves as a seed
layer for radio frequency (RF) magnetron-sputtered deposition
of a 0.9 µm KNN film.
Subsequently, a wet alkaline etching process was used
to expose the bottom electrodes, as shown in Fig. 4 (c),
given the limited selectivity of dry etching and inefficiency
of the wet acid etching process for KNN film. Before the
etching process, a 1 µm silicon oxide layer was deposited
via plasma-enhanced chemical vapor deposition (PECVD) and
selectively etched using buffered HF solution, serving as a
hard mask. The optimal etchant was determined to be a mixed
solution consisting of 120 ml H2 O2 (29% v/v), 40 ml NH4 OH
(30% v/v), and 5 g of ethylene diamine tetra-acetic acid
(EDTA, 99% purity). This etchant was heated to 75 ◦ C in
a water bath to ensure uniform corrosion of the KNN film at
an appropriate etching rate.
EDTA facilitates a high etching rate as a chelating agent
with a broad stable region in alkaline solutions. Fig. 5 illus-
trates variations in wet etching rate and thickness over time.
The etching rate reaches a maximum value of 20 nm/min
and then gradually decreases to 5 nm/min over 50 minutes
due to the consumption of NH4 OH/H2 O2 . If the etching
is insufficient, reconfiguration of the etchant is needed to
maintain a stable etching rate. The inset of Fig. 5 displays
an optical image of the KNN-etched pattern (on the right)
and its corresponding layout (on the left), revealing that side
etching reaches approximately 2 µm.
Then, a 20 nm layer of chromium (Cr) followed by a
200 nm layer of gold (Au) was deposited and patterned
through a lift-off process to form top electrodes, as shown in
Fig. 4 (d). Cr enhanced the adhesion strength between Au and
KNN thin film. Thin film release was achieved through back
cavity etching. To reduce the difficulty of release, chemical
mechanical polishing (CMP) technology was employed to
thin down and polish the rear side of the chip, as shown in
Fig. 4 (e). This technique reduced the chip’s thickness from
350 µm to 150 µm, thereby enhancing the ease of thin film
release. This reduction in thickness not only simplifies the
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ZHAO et al.: DESIGN, FABRICATION, AND CHARACTERIZATION OF HIGH-PERFORMANCE PMUT ARRAYS 5

Fig. 6. XRD pattern of KNN-Pt thin film with (001) crystal orientation.
A small FWHM of 0.32◦ and no apparent peak splitting in the (001)
orientation exhibit good crystallinity and pure perovskite structure.

Fig. 8. The underwater measurement setup includes a high-precision position

stage mounted with a commercial hydrophone and preamplifier.

Fig. 7. Measured impedance results of a PMUT super-pixel in air showing

resonant frequency 5.85 MHz. The relative dielectric constant 1200 of
PVD-sputtered KNN was obtained via calculation in a low-frequency region.

etching process but also contributes to a more uniform and

manageable substrate for subsequent processing steps. Finally,
the backside silicon cavity was precisely defined using a deep
reactive-ion etching (DRIE) process, as shown in Fig. 4 (f).
In this process, the BOX layer serves as an effective etching
stop layer, ensuring precise cavity formation, and silicone oil
temporarily bonded the device wafer to a handle wafer.

III. E XPERIMENTAL R ESULTS AND D ISCUSSION

A. KNN Film Characterization
The X-ray diffraction (XRD) analysis, as shown in Fig. 6,
offers valuable insights into the crystallographic properties of
the KNN film. The diffraction pattern results reveal a distinct
and well-defined peak in the (001) orientation, showing the
KNN film’s desirable perovskite structure for piezoelectric
materials. Additionally, the remarkably small full-width at
half-maximum (FWHM) value of 0.32◦ indicates exceptional
crystallinity and a high degree of atomic alignment in the
KNN film. Notably, there is no observable peak splitting in
the (001) orientation, exhibiting excellent crystallinity and a
pure perovskite structure.
B. Electrical Characterization
Impedance measurements of KNN-based PMUTs were per-
formed using an impedance analyzer (Keysight 4294A). Fig. 7
Fig. 9. (a) Measured and simulated results of transmitting pressure for one
PMUT super-pixel: good agreement, high transmitting pressure, broad band-
width. (b) Measured results of transmitting pressure for a PMUT super-pixel
with different poling voltages.
illustrates the measured results of the electrical impedance of a
PMUT super-pixel, revealing a center frequency of 5.85 MHz
in air. The dielectric constant of the PVD-deposited KNN film
was determined through impedance measurements in the low-
frequency range, resulting in a calculated value of 1200. The
estimated dielectric permittivity is consistent with the value
reported in [32].

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6 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS

Fig. 10. Measured acoustic pressure map of scanned various planes for a KNN-based PMUT chip (a) and measured acoustic pressure map of the XZ plane
at y = 0 mm (b) and y = 1 mm (e), YZ plane at x = 0 mm (c) and x = 1 mm (f) and YX plane at z = 3 mm (d) and z = 5 mm (g).

C. Acoustic Characterization measurement, KNN-based PMUTs were poled via 30V DC

To measure the transmission acoustic pressure generated
by KNN-based PMUTs, an underwater experiment was
conducted, as illustrated in Fig. 8. For this experiment,
a commercial hydrophone (Onda HGL-0200) with a flat fre-
quency response and a 20 dB preamplifier (Onda AG-2010)
were employed to characterize transmission performance of
PMUTs. In the setup, the hydrophone and preamplifier
were electrically connected to an oscilloscope (Rohde &
Schwarz RTA4004), which was terminated with a 50 
load and mechanically mounted on a high-precision posi-
tion stage (Zaber X-LDM) using a customized acrylic
fixture.
A KNN-based PMUT chip was wire-bonded to a printed
circuit board (PCB), and this assembly was affixed with
an acrylic sink using waterproof epoxy adhesive. A non-
conductive fluorinate liquid FC-3283 (with a density of
1820 kg/m3 and an acoustic velocity of 565 m/s) was used
to prevent circuits from shorting. The hydrophone was
positioned 3 cm away from the transmitting PMUTs during
the experiment. A sinusoidal burst signal at 15 Vpp actuation
voltage with five cycles was generated by a function generator
(Keysight 33600) and sent to the PMUT super-pixel, producing
an ultrasound wave propagated to the hydrophone in liquid.
The hydrophone then converts the ultrasound pressure into
electrical charge measured with voltage output. Before the
bias for 5 minutes to maximize their piezoelectric coefficient.
Fig. 9 (a) displays simulation and measurement results of
transmitting pressure spectrum from a PMUT super-pixel in
liquid environment, which are in good agreement. The simu-
lated results in Fig. 9 (a) were obtained from a point located
directly above a PMUT pixel, 3 cm away, consistent with the
acoustic characterization experiment. The PMUT array, when
operated underwater, exhibits a central frequency of 4.7 MHz,
as shown in the transmission spectrum. The measurement
results demonstrate the transmitting pressure of 3.8 kPa/V at
distance of 3 cm and an impressive -6 dB fractional bandwidth
of 95.7%. The DC poling voltage plays a crucial role in
shaping the transmitting capabilities of KNN-based PMUTs,
as shown by Fig. 9 (b), which depicts the transmitting pressure
spectrum of a PMUT super-pixel subjected to different DC
bias voltages for five minutes. This illustration demonstrates
a positive correlation between the applied poling voltage and
the transmitting pressure of the PMUT, indicating that higher
poling voltages lead to enhanced transmitting performance.
The enhanced transmitting pressure of KNN-based PMUTs
at increased DC poling voltages is attributed to the ampli-
fied piezoelectric effect. Elevated voltages align the electric
dipoles in the KNN material more effectively, thereby boosting
its capacity to transform electrical signals into mechanical
vibrations and vice versa. Such an improvement facilitates

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ZHAO et al.: DESIGN, FABRICATION, AND CHARACTERIZATION OF HIGH-PERFORMANCE PMUT ARRAYS
TABLE II
C OMPARISON B ETWEEN THE PMUT A RRAY IN T HIS PAPER AND P REVIOUSLY R EPORTED PMUT A RRAYS IN L ITERATURE
more efficient ultrasonic wave generation and transmission,
and therefore results in an improved sensitivity of the PMUTs.
Furthermore, higher poling voltages contribute to a more stable
and uniform poling state in the piezoelectric material, ensuring
consistent and improved transmitting performance over time.
An acoustic pressure map covering the planes of different
directions was measured, as depicted in Fig. 10. With a
high-precision position stage, a commercial hydrophone, and
a function generator interfaced with a PC control, the acoustic
pressure map of a PMUT super-pixel in FC-3283 fluid was
obtained. Fig. 10 (a) shows various pressure maps measured in
different planes for a KNN-based PMUT chip, setting horizon-
tal intervals (X/Y direction) at 0.2 mm and vertical intervals
(Z direction) at 0.4 mm. Fig. 10 (b)(e) and Fig. 10 (c)(f)
display acoustic pressure maps measured in XZ and YZ
planes with different cross-sections, respectively. These results
reveal different focusing patterns within a horizontal range of
(−2 mm to 2 mm) and a vertical range of (1 mm to 5 mm).
The findings demonstrate a peak acoustic pressure of 160 kPa
at the focal point. The measured acoustic pressure map of
the same plane exhibits an approximate pressure distribution.
As the cross-sectional acoustic pressure distribution deviates
from the focal center, it tends to diverge.
Notably, the XZ plane exhibits a narrower beam width than
the YZ plane, attributed to the smaller super-pixel dimension
in the x-axis. Fig. 10 (d)(g) demonstrates the YX plane at a
3 mm and 5 mm vertical distance, further addressing different
beam widths in various directions as previously mentioned.
The beam width in the y-direction is measured to be 4 mm
FWHM, approximately four times of the 1 mm beam width
in the x-direction in Fig. 10 (d), aligning with the length ratio
of a single KNN-based PMUT super-pixel. In future study,
multi-pixels phased array control will be implemented in the
x direction for imaging application.
Table II shows comparison between the proposed KNN-
based PMUT and previously reported PZT-based PMUTs from
the literature. These PZT-based PMUTs were selected for their
similarities in frequency, structure, and intended applications
relative to the KNN-based PMUT array in this paper. The
data in Table II highlights the significant potential of the
KNN-based PMUT and its competitive performance in terms
of transmitting pressure and operation bandwidth.
IV. C ONCLUSION
This paper presents the design, fabrication, and character-
ization of a high-performance, lead-free KNN-based PMUT
array. Notable achievements include a transmitting pressure
of 3.8 kPa/V at 3 cm which is comparable to PZT thin film
based PMUTs. A broad bandwidth of 95.7% in a PMUT
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7
super-pixel operating at a central frequency of 4.7 MHz
underwater was demonstrated utilizing PMUT array design
optimization with FEM and LEM methods. These features
demonstrate the array of promising for diverse ultrasound
imaging and sensing applications. The array’s small beam
width in the XZ plane was verified through measured acoustic
pressure mapping across various planes. Additionally, a pos-
itive correlation between the applied poling voltage and the
transmitting pressure of the KNN-PMUT was established.
Furthermore, this study presents high-quality thin PVD KNN
films and an efficient, cost-effective KNN wet etching process
to pattern the PVD KNN thin film, which behaves differently
from sol-gel KNN thin film. This study contributes to the
advancement of ultrasonic technology and its application in
medical devices and consumer electronics while addressing
environmental concerns associated with lead-based materials.
ACKNOWLEDGMENT
The authors thank Prof. Isaku Kanno from the Department
of Mechanical Engineering, Kobe University, for the
discussion of KNN thin film etching process.
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Lei Zhao received the M.S. degree from the
State Key Laboratory of Precision Measuring Tech-
nology and Instruments, Tianjin University, in 2021.
He is currently pursuing the Ph.D. degree with the
School of Software and Microelectronics, Peking
University, Beijing, China. His research interests
include the design, fabrication, and characterization
of piezoelectric MEMS sensors and actuators.
Chong Yang received the M.S. degree from the
Engineering Research Center of Semiconductor
Integration Technology, Institute of Semiconductor
Research, Chinese Academy of Sciences, in 2021.
He is currently an Engineer with the School of
Integrated Circuits, Peking University. His research
interests include piezoelectric MEMS microfabrica-
tion and characterization of piezoelectric thin films.
Xinyue Zhang is currently pursuing the bachelor’s
degree with Beijing University of Technology,
Beijing, China. She was a Graduate Student with
Peking University in 2024. Her current research
interests include ultrasonic haptics and MEMS
sensors.
Zhiwei You received the M.S. degree in electronics
and information from the University of Chinese
Academy of Sciences in 2023. He is currently
pursuing the Ph.D. degree in science and
engineering of integrated circuits with the School
of Integrated Circuits, Peking University. His
research interests include MEMS technology in
the design and development of a piezoelectric
microphone, PMUTs, and Al-Ge eutectic bonding
for MEMS-CMOS integration.
Yipeng Lu (Senior Member, IEEE) received the
Ph.D. degree from the University of California
at Davis, CA, USA, in 2015. He is currently an
Associate Professor with the School of Integrated
Circuits, Peking University. Prior to joining Peking
University, he held research and development
positions with Qualcomm Advanced Technology
Research and Development and as a Graduate
Student Researcher with Berkeley Sensor and Actu-
ator Center (BSAC). His research interests include
MEMS, microfabricated sensors and actuators,
ultrasonics, biometrics, and fingerprint sensors.