User’s Manual of DX-50 Hall Effect Measurement System

Dexing Magnet Tech. Co.
, Limited
DX-50 Hall Effect Measurement System
User’s Manual
Add: Unit 404, No.993, Anling Road, Huli Dist. Xiamen,China Zip code: 361012
Tel: 86-592-5237772 Fax: 86-592-5237901
Web: www.magnetic-inctrument.com
Email: sales@magnet-source.com
Dexing Magnet Tech. Co., Limited
Catalog
1 Software Connection................................................................................................................. .1
1.1 System Instruction .............................................................................................................. 1
1.2 Hardware Connection.......................................................................................................... 2
1.3 Software Connection ...........................................................................................................3
2 Software Usage.......................................................................................................................... 5
2.1 Interface Function Instruction............................................................................................... 5
2.2 Hall Effect Measurement.......................................................................................................9
3. Measuring Method ....................................................................................................................12
3.1 Hall Effect Measurement Principle.......................................................................................12
3.1.1 Van Der Pauw....................................................................................................................12
3.1.2 Hall Effect Basic Principle..................................................................................................13
3.2 Hall Effect Data Processing Method.....................................................................................15
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1 Software Connection
1.1 System Instruction

Placed in a magnetic field in a carrying fluid, if the current direction is perpendicular to the magnetic field, then
the direction can produce an additional transverse electric field, this phenomenon is discovered by Hall in 1879,
later known as the hall effect. With the rapid development of semiconductor physics, hall coefficient and
conductivity measurement has become one of the main methods of the research of semiconductor materials.
Through the experiment measuring hall coefficient and conductivity of semiconductor materials can judge
material conduction type, carrier concentration, carrier mobility and other main parameters. Nowadays, hall effect
is not only the main means of measuring electrical parameter determination of semiconductor materials, and with
the development of electronic technology, hall device using hall effect with its simple structure, wide frequency
response (up to 10 GHZ), long life, high reliability, etc. Have been widely used in the power measurement,
automatic control and information processing, etc.
DX-50 hall effect measurement system is composed by DXWD-50 electromagnet, DX-150 gauss meter, DX-320
constant current source, F2031 high precision power supply, sample hold and computer.
Figure (1) for the overall effect of the system.
Figure（1）DX-50 Hall effect measurement system
Among them, the F2031 high precision power supply is to provide current for electromagnet to generate
magnetic field. DX-150 gauss meter measure uniform magnetic field of electromagnet. DX-320 constant current
source provide current for hall effect measurement and measure the sample voltage. The sample is fixed on the
sample hold with four bronze needle as test points. Computer connects DX-150 gauss meter, DX-320 constant
current source, F2031 high precision power supply and to control and get the current and value of magnetic field
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of the sample.
1.2 Hardware Connection
F2031 high precision power supply connection with electromagnet

F2031 high precision power supply connected to electromagnet with guide line.
Figure（2）F2031high precision power supply rear face connection
F2031 high precision power supply connection with computer.

F2031 high precision power supply has two kind serial interfaces: RS232C and USB-232. RS232C is standard
serial interface, USB-232 turn inside serial port to USB interface. Using USB-232 to connect computer
directly( need install drive first).
Switching operation between RS232C and USB-232:

Enter the menu, choose ‘Comm Port’ to click up and down key and click ‘Enter’ to the ballot screen of computer
interface.
Recurrent selection of ‘RS232C’ and ‘USB-232’ through choose the key of up and down.
Click ‘Enter’ for confirmation, or click ‘Esc’ to keep original interface and return.
After setting, LED indicator will light ‘RS232C’ or ‘USB232’.
DX-320 constant current source connection with sample hold
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The wire line of sample hold is done, there are four guide line in total, they are respectively red, white, green and
yellow. One group is white and red, another group is green and yellow. Red and white connect current output of
rear face of DX-320. The group of yellow and green connect voltage input of DX-320 rear interface.
Figure（3） DX-320constant current source rear face connection
DX-320 constant current source connection with computer interface.

DX-320 connect with computer through RS232, if computer has serial interface, then can useDB9 serial line to
connect. If computer doesn’t have serial interface, then use provided serial line to connect USB.
DX-150 gauss meter connection with computer.
DX-150 connect with computer through RS232, if computer has serial interface, then can useDB9 serial line to
connect. If computer doesn’t have serial interface, then use provided serial line to connect USB.
1.3 Software Connection

After hardware connection, turn on gauss meter, constant current source and high precision power supply. Click
“Communication Setting’ to set serial interface, as below figure:
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Figure（4） Communication Setting
If unclear of computer interface serial interface, right click ‘my computer’ ->’management-> device manager->
port(COM and LPT) to check, as below figure. The COM1 is interface signal of RS232, COM2 is interface signal
of USB to RS232.
Figure（5）Serial check
If set right, then the light of ‘communication instruction’ turn green, otherwise it’s red.
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Figure（6）Software Connection
2 Software Usage
2.1 Interface function instruction
 Data input
Input measurement information and basic parameters to the data input area. Current control in basic parameters
is current for sample in hall effect measurement, magnetic field parameter is uniformity magnetic field value of
electromagnet, hall card thickness is for calculating measurement parameters.
 Measurement Data
Measurement data shows magnetic field B, voltage value VR of AB, CD port when measuring resistivity and hall
voltage value.
Voltage data at Vanderbilt law process
Upper region is resistivity measurement, the second half of the area is for hall voltage measurement.
Calculated result
After every test, software show calculated value.
When choose data show, measurement data will automatically show, then can delete and export the data. The
exported data will be automatically into Excel file.
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Figure（7） Measurement data show
Figure（8）Measurement data exporting
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 Graphic Plotting
When choose graphic plotting, the software will automatically change to Is-VH and B-VB graphic interface, then
import source-line number of test data to choose graphic plotting.
Figure（9）graphic plotting
 Start test
After basic parameters setting, click start to test and system will automatically be in test process.
 Stop test
During test, when need stop test, click stop test.
 Storage
After every test, click save then the test result will be saved to data test list.
Clear Display
Click clear display, the test data, Van Der Pauw method voltage data and calculated data will be cleared.
 Print interface
When there are print and export current interface, click the key to operate print.
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Figure（10）Print
 Communication Setting
Set port number and baud rate of software to every instrument, the details refer the part of software connection.
 PID Setting
Electromagnet use PID to control, you can set the appropriate PID according to actual apply, normally there is no
need to change after the first time setting.
Figure（11） PID setting
2.2 Hall Effect Measurement

Sample Installation:
Place the sample to square area of the sample hold panel, aim the four bronze needle to four test points and tighten
the corresponding nut to fix. Figure (12) is diagram after installation. Figure(13) is the diagram of place of sample hold
and gauss meter probe.
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Figure（12） Sample installation diagram
Figure（13）Place of sample hold panel and gauss meter probe

Sample Test
Set control current, magnetic field, hall card thickness, click ‘begin test’, software will accomplish test, until
calculate the hall parameters. After every test, can choose to save calculated result, then click ‘clear show’ to
next test.
If to keep magnetic field value and change control current, can draw to observe the relations between Is and VH.
If to keep control current and change magnetic filed, can draw to observe the relations between Is and VH.
2.3 Hall voltage and magneto optical voltage acquisition
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Figure（14）Hall effect measurement system software screen

Click ‘voltage acquisition window’, change the screen to voltage acquisition screen.
Figure（15）Hall effect measurement system software voltage acquisition screen
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Voltage acquisition test:

Set control current, constant current source ramp rate, click ‘start collecting’, software will accomplish test, left
data show area will show measured data of real-time display. After completion of measurement, it will show as
figure(15).
Figure（15）Hall effect measurement system software voltage acquisition interface screen data show
Click ‘sketch’, software automatic draw ‘magnetic field- hall voltage’ and ‘magnetic field-magneto voltage’, it
shown as figure(16).
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Figure（16）Hall effect test system software voltage acquisition screen curve drawing
3 Measuring Method
3.1 Hall effect test principle
3.1.1 Van Der Paw
Van Der Paw can can be used to measure the thickness of thin film samples of any shape. Made in sample side
four symmetrical electrode, as shown in figure (14).
Figure(14) Van Der Paw measurement diagram
Test resistivity, in turn in a pair of adjacent electrode current flow, and the other a pair of electrode potential
difference between the test and get the resistance R, resistivity ρ into the formula.
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D is the sample thickness, f is Vanderbilt factor, which is function of RAB,CD/RBC,AD, this is Vanderbilt method
for measurement of thin film material resistivity. There are no special requirement for sample form, but require the
thickness of the film samples evenly, resistivity evenly, the surface is simply connected, i.e. No holes. In addition,
four contact points should be small ASAP(far less than the sample cards) and the four contact points must be
located on the edge of the film.
But in actual measurement, in order to simplify measurement and calculate, normally require the thin film is
square, because square is highly symmetry, Four vertices from the geometry of a square material is completely
equivalent, thus, resistance RAB , CD and RBC, AD should be equal in theory. Look-up table can know as RAB,
CD/RBC, AD = 1, f = 1. Therefore, resistivity formula can be simplified to in the end:
dR AB,CD
 （1）
ln 2
3.1.2 Hall effect basic principle
Hall effect is essentially motion of charged particles in a magnetic field by lorentz force caused by the deflection.
When charged particles (electrons or holes) bound in solid materials, the deflection causes on the vertical
electric current and the direction of the magnetic field to produce the accumulation of positive and negative
charges to form additional transverse electric field, i.e. hall magnetic field. For N type semiconductor sample
shown in figure 2, if in the X direction Is in current electrode B and D, in the direction Z plus magnetic filed B, in
the sample carrier (electronic) will be affected by lorentz force:
Fg  evB （2）
E for the carrier (electronic) power, For the average orientation drift rate of the carrier in the direction of current, B
is magnetic induction intensity. Regardless of the carrier is positive or negative, Fg direction are along the Y
direction, under the action of this force, carrier will shift, in the Y direction, i.e. sample A and C on both sides of
the electrode number began to accumulate different charge and produce A potential difference on both sides of
sample A and C VH, forming the corresponding additional electric field E - hall electric field, the corresponding
voltage VH is called the hall voltage, electrode A and C is called the hall electrode. N type semiconductor majority
carrier for electronic, P type semiconductor majority carrier for hole. For N type specimen, hall electric field
inverse Y direction, P type specimens along Y direction:
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Figure(15) Sample diagram

Obviously, the electric field is to stop the electric field to the lateral offset carrier, carrier will be affected by a
sample with Fg transverse electric field force in the opposite direction.
FE  eEH （3）
EH is hall electric intensity
FE increases with an electric charge accumulation, steady state is reached, the two forces balance, namely the
carrier FE in the transverse electric field of force and lorentz force equals the Fg, sample charge accumulation is
balanced on both sides
eE H  evB （4）
Set the width of the sample for b, thickness for d, carrier concentration for n, the relationship with current strength
is as:
I s  nevbd （5）
By (4), (5) two type available:
1 IS B I B
VH  E H b   RH S （6）
ned d d
The hall voltage VH (voltage) between A and C electrode is proportional to the product of B and inversely
1
proportional to the thickness of sample d。Ratio ned is called hall coefficient, it’s the main parameters to reflect
hall effect intensity. The component based on hall effect is called hall element. By type (6) can see, as long as
with measured VH (v) and Is (Ann) and B (gaussian) and d (cm) can calculate RH (3 cm/coulomb) as below:
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VH d
RH   10 8 （7）
IS B
When measuring hall voltage VH, inevitably produce some side effect, and the additional potential superposition
on the hall voltage, form the measurement system error, the side effect:
（1）volt age offset V0
Due to production, two hall electric potential may neither absolute symmetrical welding in the hall on both sides,
asymmetry Hall resistivity and poor contact of control current surface can contribute to A and C is not in the
same equipotential surface poles, by this time though unknown magnetic field, but there is potential difference
between A and C, this is called volt age offset.
（2）Love he effect
When give element X direction the work current IS, Z direction magnetic field B, due to the hall chip carrier speed
obey statistical distribution, progress is mixed. When reach the dynamic balance, under the action of magnetic
field, slow fast carrier will be in lorentz force and the hall electric field under the common action, along the Y axis
deflection respectively to the opposite side, the carrier of kinetic energy will be converted to heat, make different
on both sides of the temperature rise, thus cause Y direction on both sides of the temperature difference (TA -
TC). Because the different material between hall electrode and element, so form the thermocouple, the
temperature difference produce the temperature difference electromotance VE between A and C, this is called
Love He Effect, the size of the VE and the positive and negative symbols related to size and direction of IS, B,
relationship with the VH and IS, B IS is the same, so can't eliminate in the measurement.
（3）Terrance took effect

Because the difference between two electrode of control current and contact resistance of hall element,control
current produce different joule heat at the two electrode, this cause the temperature electromotance, then the
electromotance produce thermoelectric current(called thermocurrent)Q, thermal current deflection is deflection
under the action of a magnetic field,，and the VH ∝ QB this effect is called Aaron took effect。
（4）In the age - durer g effect

As mentioned in (3) the hall element has a temperature gradient in the X direction, cause the carrier diffusion
along the gradient direction and hot current Q through the element, In the process under the Z direction of the
magnetic field B carrier, in the Y direction caused similar love he effect of temperature difference TA - TC, he
potential difference VH∝QB, the signal is related to B and unrelated with IS direction.
3.2 Hall effect data handleing method

1. Resistivity calculation
When measure resistivity of thin film using Van Der Pauw, the surface is connected for uniform thickness and
resistivity, i.ed no holes, and the sample shape is square, calculate with below formula:
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dRAB,CD
 （8）
ln 2
Calculation method is to give current for a pair of adjacent electrode ((A,B), the test the potential difference of
other pair electrode (C,D), get resistivity R. But because the reason such as material cutting process, which
leads to the measured data completely is not possible for us to strictly equal in value. Therefore, to get RAB, CD,
RBC, AD and eight resistance value with method of rotation electricity and reverse measurement of ABCD
points.The eight resistance in theory should be exactly equal, so use the eight resistance as the average of
measured values of R in this times average method to eliminate measurement error.
2. Hall voltage VH measurement

When produce hall effect, at the same time because with A variety of side effect, so that the experiment
measured the voltage between the two electrodes of A, C is not equal to the real values of the VH, but contains a
variety of side effect caused by the additional voltage, so you must try to eliminate.
U AC  (U1  U 2  U 3  U 4 ) / 4 （9）
When access to AC current, measure the BD point of electric potential difference and BD point out current and
measuring AC electric potential difference of two points, Four hall coefficient measurement results in theory
should be consistent with the numerical, so still can be used in the measurement of the resistivity of above
average method to eliminate the error of measurement.
VH  (U AC  U BD  U CA  U DB ) / 4 （10）
3. Hall coefficient RH calculation

From the principle of hall effect, we can know as long as to calculate the VH (v), and know Is (Ann) and B
(gaussian) and d (cm) that can calculate RH (3 cm/coulomb):
VH d
RH   10 8 （10）
IS B
By RH symbols (positive and negative of hall voltage) can judge sample conductive type, method is: As shown in
figure 2 Is a and B, if measured VH VAC < = 0, (i.e., point A potential below point A ´ potential) is RH negative,
sample is N type, the opposite is P type.
4. The calculation of bulk carrier concentration n

According to RH can get carrier concentration(/ cm 3):
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1
n （12）
RH e
It should be noted that this equation is assumed all the carrier with the same drift rate, Strictly, considering carrier
drift rate obeys statistical distribution, need to introduce the correct factors of the 3π/8 . But there are less effect,
ignore the factor in the experiment.
5. Calculation of surface carrier concentration

According to bulk carrier concentration(/ cm 3) and hall card thickness d(cm), can calculate surface carrier
concentration n’(/ cm 2)
n'  nd （13）
6. Calculation of conductivity
After calculation of resistivity  ，get the formula σ（/Ω•cm）：
1
 （14）

7. Calculation of mobility ratio
The relation among conductivity σ（/Ω•cm）and carrier concentration(/ cm 3) and mobility ratio is as below：
  ne （15）
Get formula of mobility ratio
1
   RH 
ne （16）
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Dexing Magnet Tech. Co.

DX-50 Hall Effect Measurement System

1.1 System Instruction .............................................................................................................. 1

1.2 Hardware Connection.......................................................................................................... 2

1.3 Software Connection ...........................................................................................................3

2.1 Interface Function Instruction............................................................................................... 5

2.2 Hall Effect Measurement.......................................................................................................9

3. Measuring Method ....................................................................................................................12

3.1 Hall Effect Measurement Principle.......................................................................................12

3.1.1 Van Der Pauw....................................................................................................................12

3.1.2 Hall Effect Basic Principle..................................................................................................13

3.2 Hall Effect Data Processing Method.....................................................................................15

1.1 System Instruction

Figure（1）DX-50 Hall effect measurement system

1.2 Hardware Connection

F2031 high precision power supply connection with electromagnet

Figure（2）F2031high precision power supply rear face connection

F2031 high precision power supply connection with computer.

Switching operation between RS232C and USB-232:

DX-320 constant current source connection with sample hold

Figure（3） DX-320constant current source rear face connection

DX-320 constant current source connection with computer interface.

1.3 Software Connection

Figure（4） Communication Setting

Figure（7） Measurement data show

Figure（8）Measurement data exporting

Figure（11） PID setting

2.2 Hall Effect Measurement

Figure（12） Sample installation diagram

Figure（13）Place of sample hold panel and gauss meter probe

2.3 Hall voltage and magneto optical voltage acquisition

Figure（14）Hall effect measurement system software screen

Figure（15）Hall effect measurement system software voltage acquisition screen

Voltage acquisition test:

Figure(14) Van Der Paw measurement diagram

Figure(15) Sample diagram

EH is hall electric intensity

By (4), (5) two type available:

（3）Terrance took effect

（4）In the age - durer g effect

3.2 Hall effect data handleing method

2. Hall voltage VH measurement

3. Hall coefficient RH calculation

4. The calculation of bulk carrier concentration n

5. Calculation of surface carrier concentration

After calculation of resistivity  ，get the formula σ（/Ω•cm）：

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