1A60

Sensitive Gate Triacs

HAOPIN MICROELECTRONICS CO.,LTD.

Description

Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose
bidirectional switching and phase control applications, where high sensitivity is required in all
four quadrants.

Symbol Simplified outline

Applications:
T2 T1
◆ Motor control
◆ Industrial and domestic lighting
G 123
◆ Heating
TO-92
◆ Static switching
Pin Description
1 Main terminal 1(T1) Features
2 Gate ◆ Blocking voltage to 600 V
3 Main terminal 2 (T2) ◆ On-state RMS current to1.5 A

SYMBOL PARAMETER Value UNIT

V DRM Repetitive peak off-state voltages 600 V

I T（RMS） RMS on-state current 1.5 A

I TSM Non-repetitive peak on-state current 15 A

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

Rth( j-c) Thermal resistance Junction to case - - 50 ℃/W

Thermal resistance Junction to - -

Rth( j-a) Ambient
120 ℃/W

1/5

Free Datasheet http://www.datasheet4u.com/

 1A60
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.

Limiting values in accordance with the Maximum system(IEC 134)

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
Repetitive peak off-state - 600
V DRM V
Voltages
I T(RMS) RMS on-state current
Tc=58℃
- 1.5 A

I TSM Surge On-State Current One Cycle,50Hz/60Hz,Peak, - 13.5/15 A

Non-Repetitive
2
It 2
I t for fusing - 0.41
2
AS
I GM Peak gate current - 0.5 A
V GM Peak gate voltage - 6.0 V
P GM Peak gate power - 1 W
P G(AV) Average gate power - 0.1 W
T stg Storage temperature -40 150 ℃
Operating junction
Tj -40 125 ℃
Temperature

O
T J=25 C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

Static characteristics
I GT Gate trigger current V D=6V; R L=10Ω I +GT1 I -
- 5 mA
I -GT1 II -
- 5 mA
I -GT3 III - - 5 mA
I +GT3 IV - - 10 mA
V GT Gate Trigger voltage V D=6V; R L=10Ω V +GT1 I -
- - 1.8 V
V GT1 II - V
- - 1.8
V GT3 III - 1.8 V
+ -
V GT3 IV - 2.0 V
-
IH Holding Current - 4.0 - mA
V GD Non-Trigger Gate Voltage Tj=125℃,V D=1/2V DRM 0.2 - - V
Repetitive Peak Off-State V D=V DRM;single phase, - -
I DRM 0.5 mA
Current Half Wave;T J=125℃
V TM Peak On-State Voltage I T=1.5A;Inst,Measurement - - 1.6 V

Dynamic Characteristics

Critical rate of rise off- Tj=125℃;(di/dt)c=-0.5A/ms,

(dv/dt)c V D=2/3 V DRM 2 - - V/μs
state

2/5

Free Datasheet http://www.datasheet4u.com/

 1A60
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.

3/5

Free Datasheet http://www.datasheet4u.com/

 1A60
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.

4/5

Free Datasheet http://www.datasheet4u.com/

 1A60
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.

MECHANICAL DATA

Dimensions in mm
Net Mass: 0.2 g
TO-92

5/5

Free Datasheet http://www.datasheet4u.com/