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Fuesefkeäš^keâue FbpeerefveÙeefjbie
ØeMve yeQkeâ
VOLUME-II
(Chapterwise & Sub Topicwise Objective Questions)
Useful for : SSC JE, HSSC JE, Metro JE (DMRC/LMRC/JMRC/BMRC), States JE/AE (UP Jal Nigam, UPSSSC, Uttar
Pradesh JE, Uttarakhand JE/AE, Rajasthan JE, RPHED, MP JE, GPSC JE, HP JE, CG JE, Bihar JE, HMWS,
J&K JE), Central Diploma JE (DRDO, ISRO, IOF, BARC, MES), Power Generation/ Transmission/
Distribution JE/AE (UPPCL, UPRVUNL, JVUNL, RVUNL, TS GENCO, TS TRANSCO, AP GENCO, AP
TRANSCO), PSU's JE/AE (Coal India Ltd., SAIL, GAIL, BHEL, NTPC, NPCIL, ESIC, HPCL, DFCCIL,
SJVNL, VIZAG STEEL), PGCIL, DDA JE, AAI JE, ESE, RRB JE, Asstt. Loco Pilot & Technician Exams
Note : Basic Electrical Engineering, Transmission and Distribution of Electrical Power, EIM, ESGP, Electrical and
Electronic Engineering Material, Earthing and Wiring DeOÙeÙeve nsleg VOLUME-I heÌ{W~
3
ELECTRICAL ENGINEERING
Basic concepts, Circuit law, Magnetic Circuit, AC Fundamentals, Measurement and Measuring instruments,
Electrical Machines, Fractional Kilowatt Motors and single phase induction Motors, Synchronous Machines,
Generation, Transmission and Distribution, Estimation and Costing, Utilization of Electrical Energy, Basic
Electronics.
Detailed Syllabus (JE Electrical Engineering)
Basic concepts:
Concepts of resistance, inductance, capacitance, and various factors affecting them. Concepts of current,
voltage, power, energy and their units.
Circuit law :
Kirchhoff’s law, Simple Circuit solution using network theorems.
Magnetic Circuit :
Concepts of flux, mmf, reluctance, Different kinds of magnetic materials, Magnetic calculations for
conductors of different configuration e.g. straight, circular, solenoidal, etc. Electromagnetic induction, self
and mutual induction.
AC Fundamentals :
Instantaneous, peak, R.M.S. and average values of alternating waves, Representation of sinusoidal wave
form, simple series and parallel AC circuits consisting of R.L. and C, Resonance, Tank Circuit. Poly Phase
system – star and delta connection, 3 phase power, DC and sinusoidal response of R-Land R-C circuit.
Measurement and measuring instruments :
Measurement of power (1 phase and 3 phase, both active and re-active) and energy, 2 wattmeter method of
3 phase power measurement. Measurement of frequency and phase angle. Ammeter and voltmeter (both
moving oil and moving iron type), extension of range wattmeter, Multimeters, Megger, Energy meter AC
Bridges. Use of CRO, Signal Generator, CT, PT and their uses. Earth Fault detection.
Electrical Machines :
D.C. Machine – Construction, Basic Principles of D.C. motors and generators, their characteristics, speed
control and starting of D.C. Motors. Method of braking motor, Losses and efficiency of D.C. Machines. (b)
1 phase and 3 phase transformers – Construction, Principles of operation, equivalent circuit, voltage
regulation, O.C. and S.C. Tests, Losses and efficiency. Effect of voltage, frequency and wave form on
losses. Parallel operation of 1 phase / 3 phase transformers. Auto transformers. (c) 3 phase induction motors,
rotating magnetic field, principle of operation, equivalent circuit, torque-speed characteristics, starting and
speed control of 3 phase induction motors. Methods of braking, effect of voltage and frequency variation on
torque speed characteristics.
Fractional Kilowatt Motors and Single Phase Induction Motors: Characteristics and applications.
Synchronous Machines –
Generation of 3-phase e.m.f. armature reaction, voltage regulation, parallel operation of two alternators,
synchronizing, control of active and reactive power. Starting and applications of synchronous motors.
Generation, Transmission and Distribution –
Different types of power stations, Load factor, diversity factor, demand factor, cost of generation, inter-
connection of power stations. Power factor improvement, various types of tariffs, types of faults, short
circuit current for symmetrical faults. Switchgears – rating of circuit breakers, Principles of arc extinction by
oil and air, H.R.C. Fuses, Protection against earth leakage / over current, etc. Buchholtz relay, Merz-Price
system of protection of generators & transformers, protection of feeders and bus bars. Lightning arresters,
various transmission and distribution system, comparison of conductor materials, efficiency of different
system. Cable – Different type of cables, cable rating and derating factor.
Estimation and costing :
Estimation of lighting scheme, electric installation of machines and relevant IE rules. Earthing practices and
IE Rules.
Utilization of Electrial Energy :
Illumination, Electric heating, Electric welding, Electroplating, Electric drives and motors.
Basic Electronics :
Working of various electronic devices e.g. P N Junction diodes, Transistors (NPN and PNP type), BJT and
JFET. Simple circuits using these devices.
4
01.
JewÅegle ceMeerve-I
(Electrical Machine-I)
7. The line representing the critical resistance of a
1. efo° Oeeje peefve$e D.C. generator .................. its O.C.C.
Skeâ [er.meer. peefve$e kesâ ›eâebeflekeâ ØeeflejesOe keâes Øemlegle keâjves
(Direct Current Generator)
Jeeueer ueeFve Fmekesâ Keguee heefjheLe DeefYeue#eCe keâes.........
1. Fleming's Right Hand Rule is applicable for- (a) intersects/keâešleer nw
Heäuesefcebie kesâ oeÙeW neLe keâe efveÙece.........kesâ efueS ueeiet (b) does not interesect/veneR keâešleer nw
neslee nw~ (c) just touches/efmeHe&â ÚgDee keâjleer nw
(a) Generator/peefve$e (d) runs parallel to /kesâ meceevlej ØeÛeeefuele nesleer nw
(b) Series motor/meerjerpe ceesšj
8. Reactance voltage in D.C. machine depends on-
(c) Induction motor/Fb[keäMeve ceesšj D.C. ceMeerve ceW efjSkeäšvs me Jeesušspe................hej efveYe&j
(d) Transformer/š^ebmeHeâe@ce&j keâjlee nw~
2. The pole shoe of a D.C. self excited generator is
made out of-/Skeâ mJe-Gòesefpele D.C. peefve$e keâe (a) armature current/DeecexÛej Oeeje
heesue–Met ............keâe yevee neslee nw~ (b) armature voltage/DeecexÛej Jeesušspe
(a) soft iron/ce=og ueesne (c) demagnetizing flux/ef[cewivesšeFefpebie Heäuekeäme
(b) cast iron/{ueJee ueesne (d) mutual induction/heejmheefjkeâ ØesjCe
(c) silicon steel/efmeefuekeâe@ve Fmheele 9. In a long shunt compound generator, the shunt
(d) residual magnetic material field is connected in parallel with-
DeJeefMe° ÛegcyekeâerÙe heoeLe& Skeâ ueebie MeCš keâcheeGC[ peefve$e ceW MeCš #es$e ............
3. The field of self excited generator is excited by- kesâ meeLe meceevlej ceW pegÌ[e neslee nw~
mJe-Gòesefpele peefve$e kesâ #es$e keâes ........... Éeje Gòesefpele (a) armature/DeecexÛej
keâjles nQ~ (b) series field/ßesCeer #es$e
(a) ac/S.meer. (c) parallel combination of armature and series
(b) D.C./[er.meer. field/DeecexÛej Je ßesCeer #es$e keâe meceevlej mebÙeespeve
(c) its own current/Fmekesâ mJeÙeb keâer Oeeje (d) series combination of armature and series
(d) either D.C. or ac/Ùee lees [er.meer. Ùee lees S.meer. field/DeecexÛej Je ßesCeer #es$e keâe ßesCeer mebÙeespeve
4. In a D.C. generator which part will convert AC 10. If the flux per pole of a D.C. generator is
into D.C.?/Skeâ [er.meer. peefve$e ceW keâewve mee Yeeie S.meer. halved but its speed is doubled, its generated
keâes [er.meer. ceW yeouesiee? emf will-
(a) Commutator/efokeäheefjJele&keâ (b) Field/#es$e Ùeefo Skeâ D.C. peefve$e keâe Heäuekeäme Øeefle heesue DeeOee keâj
(c) Brush/yeÇMe (d) Armature/DeecexÛej efoÙee peelee nw leLee ieefle oesiegvee keâj efoÙee peelee nw lees
5. How many number of parallel paths are there Fmekesâ Éeje Glheeefole emf nesiee–
in wave winding? (a) remain the same/meceeve jnlee nw
JesJe JeeFbefv[ie ceW efkeâleves meceevlej heLe nesles nQ? (b) be halved/DeeOee nes peelee nw
(a) 1 (b) 2
(c) 3 (d) A = P (c) be doubled/oesiegvee nes peelee nw
6. What is the use of interpole in D.C. generator? (d) be quadrupled/Ûeejiegvee nes peelee nw
[er.meer. peefve$e ceW Devle:OeÇgJe keâe keäÙee ØeÙeesie nw? 11. Load saturation characteristic of a generator
(a) To get large voltage/DeefOekeâ Jeesušspe Øeehle keâjvee gives relation between-
(b) To get large current/DeefOekeâ Oeeje Øeehle keâjvee Skeâ peefve$e keâe Yeej meble=efhle DeefYeue#eCe............kesâ yeerÛe
(c) To improve commutation/keâcÙetšsMeve keâes megOeejvee mecyevOe oMee&lee nw-
(d) To limit running current (a) E and If/E Deewj If (b) V and If/V Deewj If
heefjÛeeueve Oeeje keâes meerefcele keâjvee (c) V and Ia/V Deewj Ia (d) E and Ia/E Deewj Ia
resistance, in a D.C. motor, provides a : *815. For small values of armature current Ia, the
Skeâ D.C. ceesšj ceW, DeecexÛej heefjheLe keâer ØeeflejesOekeâlee torque developed by a D.C. series motor is
ceW yeoueeJe ueekeâj ieefle efveÙeb$eCe keâjvee keäÙee Øeoeve proportional to
keâjlee nw? Skeâ [er.meer. ßesCeer ceesšj Éeje efJekeâefmele yeueeIetCe&,
1. Constant torque drive/mLeeÙeer še@ke&â [^eFJe DeecexÛej Oeeje Ia kesâ efvecve ceeve kesâ efueS __________
2. Constant power drive/mLeeÙeer heeJej [^eFJe kesâ Deveg›eâceevegheeleer nw~
3. Variable power drive/heefjJeefle& heeJej [^eFJe (a) I a (b) I a2
(a) Only 1/kesâJeue 1 (c) Ia (d) 1 / I a
(b) Only 1 and 3/kesâJeue 1 Deewj 3 *816. For higher values of armature current Ia, the
(c) Only 3/kesâJeue 3 torque developed by a D.C. series motor is
(d) Only 2 and 3/kesâJeue 2 Deewj 3 proportional to
811. Motor used for punching machine is subjected DeecexÛej Oeeje Ia kesâ GÛÛeceeve kesâ efueS Skeâ [er.meer. ßesCeer
to : ceesšj Éeje efJekeâefmele yeueeIetCe& kesâ meceevegheeleer nw~
heefvÛebie ceMeerve kesâ efueS GheÙeesie efkeâÙes peeves Jeeueer ceesšj
(a) I a (b) I a2
hej ..........efoÙee peelee nw~
(a) No load/vees uees[ (c) Ia (d) 1 / I a
(b) Continuous part load/meleled DeebefMekeâ uees[ *817. For higher values of armature current, the
(c) Continuous full load/meleled hetCe& uees[ speed of a D.C. series motor is
(d) Intermittent load/Deefvejblej (Fvšefce&švš) uees[ DeecexÛej Oeeje kesâ GÛÛe ceeve kesâ efueS Skeâ [er.meer. ßesCeer
*812. The speed regulation of a motor falls from 1100 cees šj keâer ieefle nw-
rpm at no-load to 1050 rpm at rated load. The (a) Proportional to armature current
speed regulation of the motor is : DeecexÛej Oeeje kesâ meceevegheeleer
Skeâ ceesšj keâer ieefle efveÙeb$eCe vees uees[ hej 1100 rpm mes (b) Proportional to the square of armature current
Ieškeâj jsšs[ uees[ hej 1050 rpm nes peeleer nw, ceesšj DeecexÛej Oeeje kesâ Jeie& kesâ meceevegheeleer
keâer veF& ieefle efveÙeb$eCe ............. nes peeSieer~ (c) Inversely proportional to armature current.
(a) 2.36% (b) 4.76% DeecexÛej Oeeje kesâ JÙegl›eâceevegheeleer
(c) 6.77% (d) 8.84% (d) Constant/efmLej
813. The mechanical output available at the D.C. 818. In a D.C. motor if the brushes are given a
motor shaft is equal to backWard shift, then
[er.meer. ceesšj kesâ Meeheäš hej GheueyOe Ùeebef$ekeâ efveie&le Ùeefo Skeâ [er.meer. ceesšj ceW yeÇMeeW keâes yewkeâJe[& efMeheäš keâj
........... kesâ yejeyej nw- efoÙee peeS leye-
Electrical 50000 (MCQ) Volume II 82 YCT
(a) Commutation is improved *823. If the armature of a D.C. motor is supplied
efokeâdheefjJele&ve ceW megOeej neslee nw from a constant current source, and its field
from a constant voltage source, then the
(b) Commutation is worsened torque-speed charactersitic of the motor will be
efokeâdheefjJele&ve Kejeye neslee nw Ùeefo Skeâ [er.meer. ceesšj keâe DeecexÛej efmLej Oeeje œeesle
(c) Speed increases/ieefle yeÌ{leer nw Deewj Fmekeâe #es$e efmLej Jeesušlee œeesle mes Deehetefle&le neslee
(d) Both (a) and (c)/ (a) Deewj (c) oesveeW nw leye ceesšj keâe yeueeIetCe& ieefle DeefYeue#eCe nesiee-
*819. A 220 V D.C. machine supplies 20 A at 200 V
as generator. The armature resistance is 0.2 Ω.
If the machine is now operated as a motor at
the same terminal voltage and current but with
the flux increased by 10% the ratio of motor
speed to generator speed is
Skeâ 220 V [er.meer. ceMeerve peefve$e keâer lejn 200V hej
20A Deehetefle& keâjlee nw~ DeecexÛej ØeeflejesOe 0.2Ω nw~ Ùeefo
Deye ceMeerve meceeve efmeje Jeesušlee Deewj Oeeje hej uesefkeâve
10% yeÌ{s ngS heäuekeäme kesâ meeLe ceesšj keâer lejn ØeÛeeefuele
nesleer nw lees ceesšj ieefle mes peefve$e ieefle keâe Devegheele nw-
(a) 0.87 (b) 0.95
(c) 0.96 (d) 1.06
*820. T and P are the developed electromagnetic 824. An electric motor with “constant output
torque and the shaft power of a D.C. series power” will have a torque-speed characteristic
motor. If losses are neglected, then for constant in the form of a
terminal voltage efmLej efveie&le Meefòeâ kesâ meeLe JewÅeggle ceesšj keâe yeueeIetCe&-
T leLee P Skeâ [er.meer. ßesCeer ceesšj kesâ efJekeâefmele JewÅegle ieefle DeefYeue#eCe ........... kesâ ™he ceW nesiee–
ÛegcyekeâerÙe yeueeIetCe& Deewj Meeheäš Meefòeâ nw~ Ùeefo neefveÙeeB (a) Straight line through the origin
veieCÙe nw leye efmLej efmeje Jeesušlee kesâ efueS- cetue efyevog mes neskeâj meerOeer jsKee
1 (b)
Straight-line parallel to speed axis
(a) T ∝ P (b) T∝ ieefle De#e kesâ meceevlej meerOeer jsKee
P (c) Circle about the origin
(c) T ∝ P (d) T ∝ P 2 cetue efyevog kesâ heefjle: Je=le
*821. A 240 V D.C. series motor takes 40 A when (d) Rectangular hyperbola/DeeÙeleekeâej neFhejyeesuee
giving its rated output at 1,500 rpm. Its 825. In variable speed motor
resistance is 0.3Ω. The value of resistance ceesšj ceW heefjJeefle& ieefle–
which must be added to obtain rated torque at (a) a stronger commutating field is needed at low
1,000 rpm is speed than at high speed/GÛÛe ieefle keâer leguevee ceW
Skeâ 240 V [er.meer. ßesCeer ceesšj 40A ueslee nw peye keâce ieefle hej Skeâ cepeyetle keâcÙetšsefšbie #es$e keâer
1500 rpm hej Jen efveOee&efjle efveie&le oslee nw~ Fmekeâe DeeJeMÙekeâlee nesleer nw
ØeeflejesOe 0.3Ω nw~ ØeeflejesOe keâe ceeve pees 1000 rpm hej (b) a weaker commutating field is needed at low
speed than at high speed/GÛÛe ieefle keâer leguevee ceW
efveOee&efjle yeueeIetCe& Øeehle keâjves kesâ efueS peesÌ[e peevee keâce ieefle hej Skeâ keâcepeesj keâcÙetšsefšbie #es$e keâer
ÛeeefnS~ DeeJeMÙekeâlee nesleer nw
(a) 6 Ω (b) 5.7 Ω (c) same commutating field is needed at low
(c) 2.2 Ω (d) 1.9 Ω speed that at high speed/GÛÛe ieefle keâer leguevee ceW
822. In comparison to shunt and compound motors, keâce ieefle hej meceeve keâcÙetšsefšbie #es$e keâer DeeJeMÙekeâlee
a D.C. series motor develops high torque at nesleer nw
start. It is due to its comparatively (d) none of the above is correct
HeeMJe&heLe Deewj mebÙegòeâ ceesšj keâer leguevee ceW Skeâ ßesCeer Ghejesòeâ ceW mes keâesF& Yeer mener veneR nw
ceesšj Meg™Deele ceW GÛÛe yeueeIetCe& efJekeâefmele keâjlee nw~ 826. When the armature of a D.C. motor rotates,
Ùen Fmekesâ legueveelcekeâ ™he mes nesves kesâ keâejCe nw- e.m.f. induced is/peye Skeâ [er.meer. ceesšj keâe DeecexÛej
ieefle keâjlee nw, lees Øesefjle e.m.f. neslee nw–
(a) Few series turns/kegâÚ ßesCeer šve&
(a) self-induced e.m.f./mJe-Øesefjle e.m.f.
(b) Stronger series field/Øeyeue ßesCeer #es$e (b) mutually induced e.m.f.
(c) Larger armature current/DeefOekeâ DeecexÛej Oeeje DevÙeesvÙe Øesefjle e.m.f.
(d) Smaller armature resistance (c) back e.m.f./yewkeâ e.m.f.
keâce DeecexÛej ØeeflejesOe (d) none of the above/FveceW mes keâesF& veneR
Electrical 50000 (MCQ) Volume II 83 YCT
827. Where D.C. motor of 12 H.P. or more requires efvecve ceW mes keâewve-meer [er.meer. ceesšme& ceW vees-uees[ Deewj
frequent starting, stopping, reversing and vee@efceveue uees[ kesâ yeerÛe ieefle ceW keâce mes keâce nesleer nw–
speed control/peneB 12 H.P. Ùee Gmemes DeefOekeâ kesâ, (a) Series motor without commutating poles
[er.meer. ceesšj keâes ueieeleej mšeefšËie, mše@efhebie, efjJe&efmebie keâcÙetšsefšbie heesueeW kesâ efyevee meerjerpe ceesšj
Deewj ieefle efveÙeb$eCe keâer DeeJeMÙekeâlee nesleer nw JeneB– (b) Series motor with commutating poles
(a) drum type controller is used keâcÙetšsefšbie heesueeW kesâ meeLe meerjerpe ceesšj
[^ce Øekeâej kesâ efveÙeb$ekeâ keâe ØeÙeesie neslee nw (c) Shunt motor with commutating pole
(b) three point starter is used keâcÙetšsefšbie heesueeW kesâ meeLe Mebš ceesšj
leerve efyevog kesâ mšeš&j keâe ØeÙeesie neslee nw (d) Compound motor without commutating
(c) four point starter is used poles/keâcÙetšsefšbie heesueeW kesâ efyevee keâcheeGv[ ceesšj
Ûeej efyevog kesâ mšeš&j keâe ØeÙeesie neslee nw 833. The speed of a series motor at no load is
(d) all above can be used/Ghejesòeâ ceW mes meYeer Skeâ meerjerpe ceesšj keâer ieefle vees uees[ hej nesleer nw–
828. D.C. motor is to drive a load which has certain (a) infinity/Devevle (b) 4000 r.p.m.
minimum value for most of the time and some (c) 2000 r.p.m. (d) 1000 r.p.m.
peak value for short duration. We will select 834. A series motor is started without load. The
the/[er.meer. ceesšj Skeâ uees[ keâes Ûeueeves kesâ efueS nw, pees effect is that/Skeâ meerjerpe ceesšj efyevee Yeej kesâ ØeejcYe
DeefOekeâebMe meceÙe kesâ efueS efveefMÛele vÙetvelece ceeve Deewj nesleer nw~ lees keäÙee ØeYeeJe neslee nw–
ueIeg DeJeefOe kesâ efueS kegâÚ heerkeâ JewuÙet nw~ nce mesueskeäš (a) the back e.m.f. decreases
keâjWies– yewkeâ e.m.f. Iešlee nw
(a) series motor/meerjerpe ceesšj (b) the torque increases rapidly
(b) shunt motor/Mebš ceesšj yeueeIetCe& leer›elee mes yeÌ{lee nw
(c) compound motor/keâcheeGv[ ceesšj (c) the speed increases rapidly
(d) any of the above/Ghejesòeâ ceW mes keâesF& Yeer ieefle leer›elee mes yeÌ{leer nw
829. D.C. motor is to a drive a load which is almost (d) the current drawn increases rapidly
nil for certain part of the load cycle and peak Oeeje leer›elee mes yeÌ{leer jnleer nw
value for short duration. We will select this 835. What will happen if supply terminals of D.C.
[er.meer. ceesšj Skeâ uees[ keâes Ûeueeves kesâ efueS nw pees uees[ shunt motor are interchanged?
Ûe›eâ kesâ kegâÚ Yeeie kesâ efueS ueieYeie MetvÙe Deewj ueIeg Ùeefo [er.meer. Mebš ceesšj kesâ Deehetefle& efmejeW keâes heefjJeefle&le
DeJeefOe kesâ efueS heerkeâ JewuÙet nw~ nce Fmes ÛegveWies– efkeâÙee peeÙe lees–
(a) series motor/meerjerpe ceesšj (a) The direction of rotation will reverse
(b) shunt motor/Mebš ceesšj Ietceves keâer efoMee efJehejerle nesieer
(c) compound motor/keâcheeGv[ ceesšj (b) Motor will stop/ceesšj ™keâ peeÙesieer
(d) any of the above/Ghejeskeäle ceW mes keâesF& Yeer (c) Motor will run at speed lower than the normal
830. Voltage eqution for D.C. motor is speed in the same direction/ceesšj meceeve efoMee ceW
[er.meer. ceesšj kesâ efueS Jeesušspe meceerkeâjCe nw– meeceevÙe ieefle mes keâce ieefle hej Ûeuesieer
(a) Eb = V + IaRa (b) V = Eb + IaRa (d) Motor will run at its normal speed in the same
(c) Eb = V – Ia Ra 2
(d) V = Eb – IaRa direction as it was running/ceesšj Deheveer meceeve
831. One D.C. motor drives another D.C. motor. ieef le mes Gmeer efoMee ceW Ûeuesieer pewmes efkeâ Ùen Ûeue jner Leer
The second D.C. motor when excited and 836. When the electric train is moving down a hill
driven/Skeâ [er.meer. ceesšj otmejs [er.meer. ceesšj keâes [^eFJe the D.C. motor act as
keâjlee nw~ efÉleerÙe [er.meer. ceesšj peye Gòesefpele Deewj [^eFJe peye Skeâ efJeÅegle š^sve heneÌ[er mes veerÛes pee jner nw lees
keâjlee nw lees– [er.meer. ceesšj kesâ ™he ces keâeÙe& keâjsieer–
(a) runs as a generator/Skeâ pevejsšj kesâ ™he ceW Ûeueles nQ (a) D.C. series generator/[er.meer. meerjerpe pevejsšj
(b) does not run as a generator (b) D.C. shunt generator/[er.meer. Mebš pevejsšj
Skeâ pevejsšj kesâ ™he ceW veneR Ûeuelee nQ (c) D.C. shunt motor/[er.meer. Mebš ceesšj
(c) also runs as a motor (d) D.C. series motor/[er.meer. meerjerpe ceesšj
ncesMee Skeâ ceesšj kesâ ™he ceW Ûeuelee nQ 837. Which of the following statement is incorrect?
(d) comes to stop after sometime If a starter is not used with large D.C. motor, it
kegâÚ meceÙe yeeo ™keâ peelee nw will draw a starting current which
832. Which of the following D.C. motors has the
efvecve ceW mes keâewve mee keâLeve ieuele nw? Ùeefo Skeâ mšeš&j
least drop in speed between no-load and yeÌ[s [er.meer. ceesšj kesâ meeLe ØeÙeesie veneR efkeâÙee peelee nw,
nominal load? lees Ùen Skeâ ØeejefcYekeâ Oeeje ØeJeeefnle keâjsiee pees–
Electrical 50000 (MCQ) Volume II 84 YCT
(a) will produce very low starting torque 842. In a D.C. motor, unidirectional torque is
yengle keâce mšeefšËie šeke&â GlheVe nesiee produced with the help of
(b) will produce excessive line voltage drop Skeâ [er.meer. ceesšj ceW Ùetefve-[eÙejskeäMeveue yeueeIetCe& keâer
DelÙeefOekeâ ueeFve Jeesušspe [^ehe GlheVe keâjsiee meneÙelee mes GlheVe neslee nw–
(c) will damage the commutator (a) end plates/efmeje huesšW
keâcÙetšsšj Kejeye keâjsiee (b) bushes/yeÇMeeW
(d) is many times its full-load current (c) commutator/keâcÙetšsšj
Deheveer hetCe& uees[ Oeeje keâe keâF& iegvee nw (d) both (b) and (c)/oesveeW (b) Deewj (c)
838. The rated speed of a given D.C. shunt motor is 843. The speed of a D.C. motor, under constant load
900 r.p.m. To run this machine at 1000 r.p.m., conditions, is affected by
which of the following speed control scheme Skeâ [er.meer. ceesšj keâer ieefle, efmLej Yeej efmLeefle kesâ
will be used?
efoÙes ieÙes [er.meer. Mebš ceesšj keâer jsšs[ ieefle 900 r.p.m. Devleie&le kesâ Éeje ØeYeeefJele neslee nw–
nw~ 1000 r.p.m. hej Fme ceMeerve keâes Ûeueeves kesâ efueS, (a) back e.m.f./yewkeâ e.m.f.
efkeâme ieefle efveÙeb$eCe Ùeespevee keâe GheÙeesie efkeâÙee peeÙesiee? (b) field flux/heâeru[ heäuekeäme
(a) Ward-Leonard control/Jee[&-efueÙeesvee[& efveÙeb$eCe (c) armature current/DeecexÛej Oeeje
(b) Armature current resistance control (d) none of the above/FveceW mes keâesF& veneR
DeecexÛej Oeeje ØeeflejesOe efveÙeb$eCe 844. A D.C. shunt motor is rotating in clock-wise
direction as viewed from one end. The polarity
(c) Field resistance control
of connection of the armature and field
heâeru[ ØeeflejesOe efveÙeb$eCe winding are reversed simultaneously. The
(d) None of the above/FveceW mes keâesF& veneR motor will
839. In electric motors carbon brushes are used to Skeâ [er.meer. Mebš ceesšj oef#eCeeJele& efoMee ceW Ietce jne nw
Fuesefkeäš^keâ ceesšjeW ceW keâeye&ve yeÇMeeW keâe ØeÙeesie neslee nw– pewmee efkeâ Skeâ Úesj mes osKee ieÙee nw~ DeecexÛej Deewj heâeru[
(a) provide a path for flow of current JeeFbef[bie keâer OeÇgJelee Skeâ meeLe efjJeme& nes peeleer nw~ ceesšj
Oeeje kesâ ØeJeen kesâ efueS Skeâ heLe Øeoeve keâjvee nesieer–
(b) prevent sparking during commutation (a) rotate in clockWise direction/
keâcÙetšsMeve kesâ oewjeve mheeefkeËâie jeskeâvee oef#eCeeJele& efoMee ceW ner Ietcesieer
(c) prevent overheating of armature windings (b) rotate in anti-clockWise direction/
DeecexÛej JeeFbef[bie keâer DeesJej nerefšbie jeskeâvee efJejesOeer oef#eCeeJele& efoMee ceW Ietcesieer
(d) brush off carbon deposits on the commutator
(c) will not rotate at all/meYeer hej jesšsš veneR nesieer
keâcÙetšsšj hej keâeye&ve pecee yeÇMe
(d) gain excessively high speed
840. What is the effect produced by the electric
current in an electric motor? DeefOekeâ GÛÛe ieefle Øeehle keâjsieer
Fuesefkeäš^keâ ceesšj ceW Fuesefkeäš^keâ Oeeje Éeje GlheVe ØeYeeJe 845. If the field circuit of a loaded shunt motor is
suddenly opened
keäÙee neslee nw– Ùeefo Skeâ uees[s[ Mebš ceesšj keâe heâeru[ meefke&âš DeÛeevekeâ
(a) Heating effect only/kesâJeue nerefšbie ØeYeeJe Deesheve nes peelee nw lees–
(b) Magnetic effect only/kesâJeue ÛegcyekeâerÙe ØeYeeJe (a) torque developoed by the motor would be
(c) Heating as well as magnetic effect reduced to zero/ceesšj Éeje efJekeâefmele šeke&â MetvÙe lekeâ
nerefšbie kesâ meeLe-meeLe ÛegcyekeâerÙe ØeYeeJe Ieš peeÙesiee
(d) Heating as well as chemical effect (b) it would race to almost infinite speed
nerefšbie kesâ meeLe-meeLe jemeeÙeefvekeâ ØeYeeJe Ùen ueieYeie Devevle ieefle hej Ûeuesieer
841. In a motor, energy conversion would not have (c) it would draw abnormally high armature
been possible but for the current/Ùen DemeeceevÙe ™he mes GÛÛe DeecexÛej Oeeje
Skeâ ceesšj ceW, Tpee& ®heevlejCe mebYeJe veneR neslee Ùeefo uesiee
vener neslee lees (d) the fuse or circuit breaker will open the
(a) production of opposing back e.m.f. Eb in the circuit before too much damage is done to the
armature/DeecexÛej ceW efJejesOeer yewkeâ e.m.f. Eb keâe motor/ceesšj keâes yengle DeefOekeâ #eefle nesves mes henues
Glheeove heäÙetpe Ùee meefke&âš yeÇskeâj meefke&âš Deesheve nesiee
(b) input energy from supply/mehueeF& mes Fvehegš Tpee& 846. The ratio of starting torque to full load torque
(c) use of commutator/keâcÙetšsšj keâe ØeÙeesie is least in the case of :
(d) application of Fleming's left hand rule efvecveefueefKele ceW mes efkeâme ØekeâjCe ceW ØeejbefYekeâ yeue
heäuesefcebie JeeÙe nmle ™ue keâe DevegØeÙeesie DeeIetCe& leLee hetCe& yeue DeeIetCe& keâe Devegheele vÙetvelece nesiee?
Electrical 50000 (MCQ) Volume II 85 YCT
(a) Series Motor/ßesCeer ceesšj ceW 851. The rated speed of a given d.c. shunt motor is
(b) Shunt Motor/Mebš ceesšj ceW 1050 r.p.m. To run this machine at 1200 r.p.m
(c) Differentially Compounded the following speed control scheme will be used:
ef[HeâjsefvMeÙeueer keâcheeGC[s[ ceW [er.meer. Mebš ceesšj keâer efveOee&efjle ieefle 1050 r.p.m. nw~ Fme
(d) Cumulative Compounded/keâcÙetuesefšJe keâcheeGC[s[ ceW ceMeerve keâes 1200 r.p.m hej Ûeueeves kesâ efueS efvecveefueefKele
847. In D.C. machines, fractional pitch winding is ceW mes efkeâme ieefle efveÙeb$eCe mkeâerce keâe ØeÙeesie efkeâÙee
used to :/efo° Oeeje ceMeerveeW ceW Fractional
(DebMeOeejkeâ) Pitch JeeFbef[bie keâe ØeÙeesie :
peeSiee~
(a) improve cooling/Meerleueve yeÌ{eves ceW keâjles nQ (a) Field resistance control/#es$e ØeeflejesOe efveÙeb$eCe
(b) reduce copper losses (b) Ward - Leonard control/Jee[& efueÙeesvee[& efveÙeb$eCe
leebyes kesâ Üeme keâes keâce keâjves ceW keâjles nQ (c) Varying frequency/heefjJele&veMeerue DeeJe=efle
(c) increase the generated emf (d) Armature circuit resistance control
Glheeefole efJeÅegle Jeenkeâ yeue keâes yeÌ{eves nsleg
(d) reduce the sparking/mheeefkeËâie Ieševes nsleg
DeecexÛej heefjheLe ØeeflejesOe efveÙeb$eCe
848. In a D.C. motor, speed control by varying the *852.Two d.c. series motors connected in series draw
armature circuit resistance provides a : current I from supply and run at speed N. When
Skeâ efo° ceesšj ceW DeecexÛej kesâ heefjheLe ceW efJekeâefmele the same two motors are connected in parallel
ØeeflejesOe keâs heefjJele&ve kesâ Éeje ceesšj keâer ieefle keâes taking current I from the supply, the speed of
efveÙebef$ele keâjkesâ : each motor will be:
(a) constant torque drive ëe= bKeuee ceW pegÌ[er oes [er.meer. ëe=bKeuee ceesšj mehueeF& mes Oeeje
efmLej DeeIetCe& [^eFJe Øeehle nesleer nw I uesleer nw Deewj ieefle N hej Ûeueleer nw~ peye FvneR oes ceesšjeW
(b) variable torque drive keâes mehueeF& Oeeje I ueskeâj meceeblej ceW peesÌ[ efoÙee peeS, lees
efYeVe DeeIetCe& yeue [^eFJe hewoe keâer peeleer nw ØelÙesskeâ ceesšj keâer ieefle efkeâleveer nesieer ?
(c) constant power drive
(a) 2 N (b) 4 N
efmLej heeJej [^eFJe GlheVe keâer peeleer nw
(d) variable power drive N
(c) (d) N
heefjJele&ve Meerue heeJej [^eFJe GheueyOe neslee nw 2
849. Match List I with List II and choose the correct 853.The commutator in a D.C. machine acts as
answer from the options given below : efkeâmeer D.C. ceMeerve keâe efokeäheefjJele&keâ efkeâme ™he ceW keâeÙe&
List I (Machines) List II (Graphs)
(ceMeerve) («eeheâ)
keâjlee nw?
(i) D.C. motor a. circle diagram(Je=òe efÛe$e) (a) a mechanical inverter/Ùeebef$ekeâ Øeefleueescekeâ
D.C. ceesšj (b) a mechanical rectifier/Ùeebef$ekeâ efo°keâejer
(ii) D.C. generator b. V-curve V-Je›eâ (c) current controller/Oeeje efveÙeb$ekeâ
D.C. pesvejsšj (d) either (a) or (b)/Ùee (a) Ùee (b)
(iii) Alternator c. Open circuit
characteristics *854. The commutator segments of D.C. machine are
cegòeâ heefjheLe efJeefMe°lee made of/D.C. ceMeerve kesâ efokeäheefjJele&keâ kesâ KeC[
(iv) Induction motor d. speed torque curve efkeâmemes yeveles nQ?
ØesjCe ceesšj ieefle DeeIetCe& Je›eâ (a) tungsten/šbimšve
(a) iv-a, iii-b, i-c, ii-d (b) iii-a, iv-b, ii-c, i-d (b) hard-drawn copper/keâ"esj keâef<e&le leeByee
(c) iv-a, iii-b, ii-c, i-d (d) iii-a, iv-b, i-c, ii-d
850. A differentially compound D.C motor runs at a (c) soft copper/vejce leeByee
full load speed of 1000 rpm. If its series field (d) electrolytic copper/efJeÅegled-DeheIešŸe leeByee
winding is short circuited, then its full-load *855. Two d.c. series motors are connected in series
speed :
Skeâ DeJekeâue keâcheeGb[ [ermeer ceesšj 1000 rpm keâer hetCe& to produce a torque T. Now if the motors are
connected in parallel, the torque produced will be-
uees[ ieefle mes Ûeueleer nw~ Ùeefo Fmekeâer ßesCeer #es$e kegbâ[ueer oes [er.meer. ßesCeer ceesšjeW keâes yeue-DeeIetCe& T hewoe keâjves
keâes ueIeg heefjheLe keâj efoÙee peeÙes lees Fmekeâer hetCe& uees[
ieefle efvecveefueefKele nesieer : kesâ efueS ßesCeer ceW mebÙeesefpele efkeâÙee ieÙee nw~ Deye Ùeefo
(a) Becomes more than 1000 rpm ceesšjeW keâes heeÕe& ceW mebÙeespeve efkeâÙee peeS, lees yeveves Jeeuee
1000 rpm mes DeefOekeâ nes peeSieer yeue-DeeIetCe& nesiee-
(b) Becomes less than 1000 rpm (a) T/4 (b) T/2
1000 rpm mes keâce nes peeSieer (c) 2T (d) 4T
(c) Remains 1000 rpm./1000 rpm ner jnsieer 856. What does the nominal power printed on the
(d) Motor first accelerates and then stops with name plate of any motor signify?
jerks/ceesšj henues lees lJeefjle nesieer Deewj efHeâj Peškesâ kesâ efkeâmeer Yeer ceesšj keâer vesce huesš hej cegefõle meebkesâeflekeâ
meeLe ®keâ peeSieer Meefòeâ keäÙee Fbefiele keâjleer nw?
Electrical 50000 (MCQ) Volume II 86 YCT
(a) Power drawn in kVA *861. T is the load torque of a D.C. series motor
kesâ.Jeer.S. (kVA) ceW KeeRÛeer ieF& Meefòeâ having linear magnetization and negligible
(b) Output power at the shaft armature resistance. Speed of the motor is
Mee@heäš hej Glheeefole Meefòeâ veieCÙe DeecexÛej ØeeflejesOe Deewj jsKeerÙe ÛegckeâlJe kesâ meeLe
(c) Power drawn in kW/kW ceW KeeRÛeer ieF& Meefòeâ Skeâ [er.meer. ßesCeer ceesšj keâe Yeej yeueeIetCe& T nw~ ceesšj
(d) The gross power/mekeâue Meefòeâ keâer ieefle nw-
857. Copper brushes in D.C. machine are used (a) Inversely proportional to T .
[er.meer. ceMeerve ceW leeByes kesâ yegÇMe keâe GheÙeesie neslee nw
(a) where low voltage and high currents are T kesâ JÙegl›eâceevegheeleer
involved/peneB efvecve Jeesušspe Deewj GÛÛe ØeJeen neslee nw (b) Directly proportional to T
(b) where high voltage and small currents are T kesâ ØelÙe#e meceevegheeleer
involved/peneB GÛÛe Jeesušspe Deewj efvecve ØeJeen neslee nw Inversely proportional to T2
(c)
(c) in both of the above cases
T2 kesâ JÙegl›eâceevegheeleer
Thejer oesveeW GoenjCeeW ceW
(d) Directly proportional to T2
(d) in none of the above cases
Thejer keâesF& Yeer GoenjCe ceW veneR T2 kesâ ØelÙe#e Deveg›eâceevegheeleer
858. In case of D.C. machine winding, number of 862. An electric train employing a D.C. series motor
commutator segments is running at a fixed speed, when a sudden
[er.meer. ceMeerve JeeFbeE[ie ceW efokeäheefjJele&keâ KeC[eW keâer slight drop in the mains voltage occurs. This
would result in
mebKÙee Fleveer nesleer nw efpeleveer Skeâ JewÅegle š^sve keâeÙe&jle [er.meer. ßesCeer ceesšj efmLej ieefle
(a) number of armature coils
DeecexÛej keäJee@Fue keâer mebKÙee hej Ûeue jne nw peye cegKÙe Jeesušlee ceW DeÛeevekeâ LeesÌ[er
(b) number of armature coil sides meer keâceer nesleer nw~ Fmekeâe heefjCeece nesiee-
DeecexÛej keäJee@Fue meeF[ keâer mebKÙee (a) Drop in speed and rise in current
(c) number of armature conductors ieefle ceW keâceer Deewj Oeeje ceW yeÌ{esòejer
DeecexÛej Ûeeuekeâ keâer mebKÙee (b) Rise in speed and drop in current
(d) number of armature turns/DeecexÛej šve& keâer mebKÙee ieefle ceW yeÌ{esòejer Deewj Oeeje ceW keâceer
859. Which of the following methods of speed (c) Rise in speed and rise in current
control of D.C. machines will offer minimum ieefle ceW yeÌ{esòejer Deewj Oeeje ceW yeÌ{esòejer
efficiency? (d) Drop in speed with current unaltered
efvecve ceW mes [er.meer. ceMeerve keâer ieefle efveÙeb$eCe, keâer keâewve- ieefle ceW keâceer kesâ meeLe Oeeje DeheefjJeefle&le
meer heæefle vÙetvelece o#elee Øeoeve keâjleer nw? *863. When the torque of a D.C. series motor is
(a) Voltage control method/Jeesušspe efveÙeb$eCe heæefle trippled, the power approximately increases by
(b) Field control method/#es$e efveÙeb$eCe heæefle peye [er.meer. ßesCeer ceesšj keâe yeueeIetCe& leerve iegvee keâj
(c) Armature control method/DeecexÛej efveÙeb$eCe heæefle efoÙee peelee nw lees Meefòeâ ............. kesâ Éeje ueieYeie
(d) All the above methods/Thejer meYeer heæefle yeÌ{leer nw-
860. A D.C. series motor fed from rated supply (a) 33% (b) 50%
voltage is overloaded and its magnetic circuit is (c) 75% (d) 150%
saturated. The torque-speed characteristic of
864. It is advisable to start a D.C. series motor with
this motor will be approximately represented
by which curve of figure given: some load to/Skeâ [er.meer. ßesCeer ceesšj kegâÚ Yeej kesâ
efveOee&efjle Deehetefle& Jeesušlee mes heesef<ele Skeâ [er.meer. ßesCeer meeLe ØeejcYe keâjvee GefÛele nw
ceesšj DeefleYeeefjle nw Deewj Fmekeâe ÛegcyekeâerÙe heefjheLe (a) Limit the flux/heäuekeäme meerefcele keâjves
meble=hle nw~ efoS ieS efÛe$e ceW keâewve mes Je›eâ Éeje Fme ceesšj (b) Limit the current/Oeeje meerefcele keâjves
keâe yeueeIetCe&-ieefle DeefYeue#eCe ueieYeie ØeoefMe&le nesiee- (c) Limit the speed/ieefle meerefcele keâjves
(d) Avoid sparking/mhegâefuebie mes yeÛeeves
865. The speed of a 4-pole D.C. series motor at no
load will be/MetvÙe Yeej hej Skeâ 4-OeÇgJe Jeeueer [er.meer.
ßesCeer ceesšj keâer ieefle nesieer-
(a) Zero/MetvÙe (b) 3000 rpm
(c) Infinite/Devevle (d) 1500 rpm
866. The D.C. series motor is best suited for traction
(a) Curve A/Je›eâ A (b) Curve B/Je›eâ B work, because/[er.meer. ßesCeer ceesšj mebkeâ<e&Ce kesâ efueS
(c) Curve C/Je›eâ C (d) Curve D/Je›eâ D meyemes GheÙegòeâ nw keäÙeeWefkeâ-
Electrical 50000 (MCQ) Volume II 87 YCT
(a) Torque is proportional to the square of the 870. In a D.C. machine, which loss increases rapidly
armature current and speed is inversely with the increase in frequency of magnetic
proportional to torque reversales?/[er.meer. ceMeerve ceW keâewve meer neefve ÛegcyekeâerÙe
yeueeIetCe& DeecexÛej Oeeje kesâ Jeie& kesâ Deveg›eâceevegheeleer nw efjJeme&ueeW (Gl›eâceCeeW) keâer DeeJe=efòe yeÌ{ves kesâ meeLe lespeer mes
Deewj ieefle yeueeIetCe& kesâ JÙegl›eâceevegheeleer nw yeÌ{lee nw–
(b) Torque is proportional to the square of (a) Copper loss/leeceü neefve
armature current and speed is directly (b) Hysteresis loss/efnmšsjsefmeme neefve
proportional to torque
(c) Eddy current loss/YeJej Oeeje neefve
yeueeIetCe& DeecexÛej Oeeje kesâ Jeie& kesâ Deveg›eâceevegheeleer nw
Deewj ieefle yeueeIetCe& kesâ meerOes meceevegheeleer nw (d) Mechanical loss/Ùeebef$ekeâ neefve
(c) Both torque and speed are proportional to 871. The core (or iron) losses, in a D.C. machine
the square of armature current occur due to/[er.meer. ceMeerve ceW keâesj (Ùee ueewn) neefveÙeeB
yeueeIetCe& leLee ieefle oesveeW DeecexÛej Oeeje kesâ Jeie& kesâ kesâ keâejCe nesleer nw–
meceevegheeleer nw (a) Eddy current loss only/kesâJeue YeBJej Oeeje neefve
(d) Torque is proportional to armature current (b) Hysteresis loss only/kesâJeue efnmšsjsefmeme neefve
and speed is inversely proportional to torque (c) Both hysteresis and eddy current losses
yeueeIetCe& DeecexÛej Oeeje kesâ meceevegheeleer nw Deewj ieefle efnmšsjsefmeme Deewj YeBJej Oeeje neefveÙeeB oesveeW
yeueeIetCe& kesâ JÙegl›eâceevegheeleer nw (d) Air friction only/kesâJeue JeeÙeg Ie<e&Ce
867. A D.C. series motor is used for an overhauling 872. In a D.C. machine, ohmic or copper losses
load. It can work stably if occur in the/[er.meer. ceMeerve ceW Deesefÿekeâ Ùee leeceü
Skeâ [er.meer. ßesCeer ceesšj DeesJejneefuebie Yeej kesâ efueS neefveÙeeB ________ ceW nesleer nw
ØeÙeesie neslee nw ~ Ùen efmLejleehetJe&keâ keâeÙe& keâj mekeâlee nw (a) Armature winding only/kesâJeue DeecexÛej kegâC[ueve
Ùeefo- (b) Field winding only/kesâJeue #es$e kegâC[ueve
(a) The armature is shunted by a resistor (c) Brush contact only/kesâJeue yeÇMe mecheke&â
DeecexÛej Skeâ ØeeflejesOe Éeje HeeMJe&heLes[ nw (d) All of the above/Ghejesòeâ meYeer
(b) The field winding is reversed 873. In a D.C. machine, armature copper loss varies
#es$e kegâC[ueve heefjJeefle&le (Gl›eâefcele) nw as/[er.meer. ceMeerve cebs DeecexÛej Ùee leeceü neefveÙeeB
(c) A resistor is put in series with the machine meceevegheeefle nesleer nw
ceMeerve kesâ meeLe ßesCeer ceW Skeâ ØeeflejesOe jKee peelee nw (a) Load current/Yeej Oeeje
(d) A diverter is put across the field
(b) (Load current)2/(Yeej Oeeje)2
#es$e kesâ Deej-heej Skeâ [eF&Ješ&j jKee peelee nw
(c) 1/load current/1/Yeej Oeeje
868. The terminal voltage of a D.C. shunt motor is
halved and the load torque is varied as the (d) 1/(Load current)2/1/(Yeej Oeeje)2
square of the speed, the field flux remaining 874. Which of the following losses occuring in a
constant, consequently the armature current D.C. machine has the largest percentage?
would be approximately efvecveefueefKele ceW mes efkeâme neefve keâer [er.meer. ceMeerve ceW
Skeâ [er.meer. HeeMJe&heLe ceesšj keâe efmeje Jeesušlee DeeOeer nw meJee&efOekeâ ØeefleMele nesleer nw~
Deewj Yeej yeueeIetCe& ieefle kesâ Jeie& kesâ Deveg™he heefjJeefle&le (a) Iron loss/ueewn neefve
neslee nw, Je #es$e Heäuekeäme efmLej jnlee nw– (b) Windage loss/efJeb[spe neefvess
(a) Constant/efmLej (c) Copper loss/leeceü neefve
(b) Halved/DeeOee (d) Iron loss/DeeÙejve neefve
(c) One fourth of the normal value 875. The armature core of a D.C. machine gets
meeceevÙe ceeve keâe Skeâ ÛeewLeeF& overheated due to/ [er.meer. ceMeerve keâe DeecexÛej keâesj
(d) Twice the normal value/meeceevÙe ceeve keâe oes iegvee __________ kesâ keâejCe Deefleiece& nes peelee nw
869. In a D.C. shunt machine, hysteresis loss (a) Copper loss occuring in armature winding
Skeâ [er.meer. Mebš ceMeerve ceW efnmšsefjefmeme neefve nesleer nw only/ leeceü neefve kesâJeue DeecexÛej kegâC[ueve ceW nesleer nw
(a) Is independent of lamination thickness (b) Eddy current loss only/kesâJeue YeBJej Oeeje neefve
uesefcevesMeve keâer ceesšeF& mes mJelev$e nseleer nw (c) Hysteresis loss only/kesâJeue efnmšsjsefmeme neefve
(b) Varies as the supply frequency (d) All of the above/Ghejesòeâ meYeer
Deehetefle& DeeJe=efòe keâer lejn heefjJele&veerÙe *876. A D.C. motor running at 2,000 rpm has a
hysteresis loss of 500 W and eddy-current loss
(c) Varies as 1.6 power flux density
of 200 W. The flux is maintained constant but
1.6 Meefòeâ DeeJe=efòe IevelJe keâer lejn heefjJele&veerÙe the speed is reduced to 1,000 rpm. At the
(d) All of the above /Ghejesòeâ ceW mes meYeer reduced speed the total iron loss would be
*Hints
32. (a) φ
Øeefle OeÇgJe ÛeeuekeâeW keâer mebKÙee 1000 2
=
= Ûeeuekeâes keâer mebKÙee/heesue keâer mebKÙee N2 φ
200 1000 φ
= = 50 =
4 N2 2×φ
Øeefle Ûeeuekeâ peefvele Jeesušlee =2 Volt
Dele: ceMeerve Éeje Glheeefole Jeesušlee =50×2=100V N 2 = 2000 rpm
35. (b) 198. (a)
DeÛÚer lejn mes DeefYekeâefuhele peefve$e keâer o#elee 95% nesleer nw~ E g1 N1
Dele: neefveÙeeB =1kW keâe 5% = mes
E g2 N2
5 1200
= 1000 × = 50 W Eg 2 = × 100
100 1000
66. (b)
E g2 = 120 V
120f
N= mes 206. (c)
P
Vt = Eg – IaRa
1500 × 4 peneB Eg = 500V, Ra = 0.2 Ω, Ia = 200 A
f=
120 Vt = Eg – IaRa
= 50 Hz Vt = 500 – 0.2 × 200
98. (a) Vt = 500 – 40
uewhe kegâC[ueve kesâ efueS Øeefle heeLe Oeeje keâe ceeve Vt = 460 Volt
= Oeeje/heesue keâer mebKÙee
100
= = 25 A
4
180. (b)
Mebš peefve$e kesâ efueS–
1
N∝
φ
φ1 = φ 228. (c)
N1 φ2
∴ = φZN P
N 2 φ1 φ2 = φ Eb = ×
2 60 A
Electrical 50000 (MCQ) Volume II 230 YCT
φ× 240 × 1000 6 ∵ A = 2 6 × 60 3
500 = × = =
60 2 JesJe keâgC[ueve keâs efueS
120 1
500 × 60 × 2 E A : E B = 3 :1
φ= 325. (c)
240 ×1000 × 6
60000 E b2 PφZN 2 60A
φ= = ×
1440000 E b1 60A PφZN1
φ = 0.0416Wb E b2 1200
=
229. (c) 200 1000
VI L 1200
o#elee (η) = × 100 E b2 = × 200
VI L + I 2sh R sh + I 2 a R a + P 1000
peneB, V = 220 V, IA = 10 + 500 = 510A, IL = 500A E b2 = 240 Volt
200 329. (d)
Ra = 0.01Ω, Ish = 10 A, Rsh = = 22Ω Vt = E b − I a R a
10
P = 5000 W = 600 − 200 × 0.1
500 × 220 = 600 − 20
η= × 100
500 × 220 + (10 ) × 22 + ( 510 ) × 0.01 + 5000
2 2
Vt = 580 Volt
= 91.81%
352. (d)
230. (c)
dπ N
φZN P
× e = BlV Ùee B.l
60
Eg =
60 A
lejbie kesâ efueS A = 2 2 × 3.14 × 600
= 1 × 0.30 ×
φZNP 60
Eg =
60 × 2 e = 18.84 Volt
0.01× 51× 24 × N × 2 peneB d = JÙeeme, l = uecyeeF&
220 =
60 × 2 353. (c)
N = 1078 rpm
PφZN
238. (a) Eg =
PφZN 60A
e.m.f. = 60 × 500 × 2
60A φ=
ÛetBefkeâ kegâC[ueve uewhe nw~ FmeefueS A keâe ceeve P kesâ yejeyej nesiee~ 240 × 1000 × 6
4 × 0.1× 1000 × 600 φ = 0.042mWb
e.m.f. = 365. (c)
60 × 4
e.m.f. = 1000 volt Total armature ampere-turns per pole
239. (c) ZI Z I
peye efkeâmeer D.C.pevejsšj kesâ Yeej ØeeflejesOe keâes heefjJeefle&le keâjles nQ lees = c = p× a
2P 2p A
efveÙele Jeesušspe hej Mevš pevejsšj heeJej GlheVe veneR keâjlee nw~ 720 50
240. (c) = × (∴ A = P)
2×6 6
120f = 500 A
NS =
P 376. (b)
N = 1000 r.p.m., f = 50 Hz
120f vees uees[ Jeesušspe − Heâgue uees[ Jeesušspe
P= %V.R. = × 100
Ns Heâgue uees[ Jeesušspe
120 × 50 210 − 200
P= , P=6 = × 100
1000 200
311. (b) 10
= × 100
E A PφZN 60A 200
= ×
EB 60A PφZN V.R. = 5%
( ∵ lejbie kegâC[ueve kesâ efueS A =2 381. (d)
leLee uewhe kegâC[ueve kesâ efueS A = P) Number of compensating conductor/pole
E A 6 × φZN 60 Z Polearc
= × Zc =
EB 120 φZN A.P Pole pitch
Eb Ia 10000
τ ' ∝ ( 0.05 ) Ia 2
2 (T) = = = 106.1 N − m
2 πN 2 π × 900
τ Ia 2 τ Ia 2 60 60
= 2 ⇒ = T 70
τ ' I 'a τ ' 0.25 Ia 2
Ia 2 = × Ia1 =
2
× 45.75 = 30.18 A
T1 106.1
τ'
= = 0.25 = τ ' = 0.25τ 784. (b)
τ
E
τ ' = 25% ieefle (N) = N 0 × b
779. (a) E b0
Vt − K a φωm1 6000 × E b
DeecexÛej Oeeje Ia1 = = = 50 E b
ra 120
(before inserting Rg in Armature circuit.) V − E b 60 − E b
Ia = =
peye Rg keâes DeecexÛej heefjheLe ceW ØeefJe<š keâjeÙee peelee nw lees– Ra 2.5
Vt − K a φωm1 ra 2 πN
I'a1 = = Ia1 × E b Ia = T ×
ra + R g ra + R g 60
∵ Mevš ceesšj ceW heäuekeäme efveÙele jnlee nw– E (60 − Eb ) 2π π
FmeefueS b = 0.5 × N = × 50 E b
Dele: Ia 1 Iešves hej K a φIa1 mes K a φI'a1 lekeâ 2.5 60 60
E b = 53.455 {∵ N = 50 E b }
yeueeIetCe& Te Yeer Iešlee nw~
Deewj ieefle, N= 50 × 53.455 = 2673 rpm
Fme Øekeâej Te, Constant Load Torque mes keâce nesiee, mheer[
785. (a)
Iešsieer leLee Back emf Yeer Iešsiee, Fme Øekeâej DeecexÛej Oeeje– At stalling condition
Vt − Back emf Eb=0
Ia = mes yeÌ{ peeÙesiee Deewj Ùen leye lekeâ
ra FmeefueS
yeÌ{siee peye lekeâ efkeâ Ùen Deheveer ØeejefcYekeâ DeJemLee "Ia1 " keâes ve Øeehle V − Eb 240 − 0
Istall = = = 160A
keâj ues~ Fme Øekeâej ØeejefcYekeâ yeueeIetCe& hegve: efJekeâefmele nes peeÙesiee~ R a + R ext 0.5 + 1.0
Dele: Fme Øekeâej kesâ mheer[ keâvš^esue ceW efmLej yeueeIetCe& kesâ efueS– Istall 160
(1) mehueeF& ceW mes efueÙee ieÙee DeecexÛej Oeeje efmLej jnsiee Deewj mehueeF& = =4
I full 40
ceW ceesšj keâes efoÙee ieÙee heeJej Yeer efmLej jnsiee peyeefkeâ P1 = Vt × Ia 807. (a)
nes Ûeens DeecexÛej heefjheLe ceW Rg nes Ùee ve nes~ P = τω = E b Ia
(2) uees[ keâes oer ieÙeer Meefkeäle–
P = Power τ = torque
P2 = E a 2 I a1 = Vt − I a1 ( ra + R g ) Ia1 Ùee P2 = Costant Load ω = speed in rad/sec Eb = back emf
Ia = armature current
Torque × ωm2 nesiee~ Fme Øekeâej osKee peelee nw efkeâ uees[ keâes efoÙee E b1 = 200 − I a1 R a = 200 −10 × 2 =180 V
ieÙee Meefkeäle mheer[ kesâ Iešves hej Iešlee nw~ E b2 = 200 − Ia 2 R a = 200 − 5× 2 =190 V
780. (a)
DeecexÛej Éeje Glheeefole yeueeIetCe&– E b1 N1 180 2000
= = =
Eb Ia 200 × 15 E b2 N 2 190 N2
Te = = = 23.87 N − m 2000
2πN 2π × 1200 N2 = ×190 = 2111.11 rpm
60 60 180
781. (b) 2πN 2π× 2111.11
ω= = = 221.07 rad / sec
T ∝ φI a 60 60
τω = EbIa
T2 φ2 Ia 2 221.07 × τ = 190 × 5
FmeefueS = ×
τ = 4.29 Nm
T1 φ1 Ia1
E V − I a (R a + R se ) V − Eb 240 − 152
N∝ b ∝ R e xt = − Ra = − 0.3
φ φ Ia 2 40
efo° Oeeje ßesCeer ceesšj ceW R e xt = 1.9 Ω
φ ∝ I se ∝ I a (Ùeefo #es$e Demeble=hle nes) 823. (b)
1 DeecexÛej Oeeje efmLej nw keäÙeesefkeâ efmLej Oeeje œeesle mes Deehetefle& keâer pee
N∝ (Ia(Ra+Rsc) veieCÙe)
Ia V
jner nw~ Heäuekeäme Øeefle OeÇgJe efmLej nw, keäÙeesefkeâ I sh = keâer efmLej nw
815. (b) R sh
efo° Oeeje ßesCeer ceesšj ceW T ∝ φI a efmLej jeefMeÙeeW keâe Øees[keäš, FmeefueS Ùen ceesšj keâer ieefle keâe
T ∝ φIa OÙeeve efoS efyevee efmLej jnlee nw~
efo° Oeeje ceesšj ceW I se = I a 852. (b)
Deewj φ ∝ I se ∝ I a
DeecexÛej Oeeje (Ia) kesâ efvecve ceeve kesâ efueS
T ∝ I 2a
816. (a)
efo° Oeeje ßesCeer ceesšj ceW
T ∝ φI a
DeecexÛej Oeeje kesâ DeefOekeâ ceeve kesâ efueS (φ) ueieYeie efmLej nesiee
T ∝ Ia
817. (d)
efo° Oeeje ßesCeer ceesšj ceW
Eb
N∝ ßesCeer mebÙeesie ceW meerjerpe ceesšjeW keâer ieefle-
φ
Eb V V KV
DeecexÛej Oeeje kesâ DeefOekeâ ceeve kesâ efueS φ ueieYeie efmLej nesiee~ Ns ∝ ∝ ∝ DeLee&led N s =
φ 2φ 2 I 2I
N ∝ E b ∝ V − I a ( R a + R se ) meceevlej mebÙeeWie ceW meerjerpe ceesšjeW keâer ieefle-
N ≃ constant ( Ia (R a + R se ) = Negligible Eb V 2V
819. (a)
Np ∝ ∝ ∝ DeLee&led
φ φ I
N m φg E b 2V 4 KV
= × Np = K = = 4Ns
N g φm E g I 2I
φ N p = 4Ns
Nm 200 − 20 × 0.2
= g × 854. (b)
N g 1.1φg 200 + 20 × 0.2
D. C ceMeerve kesâ efokeäheefjJele&keâ kesâ KeC[ keâ"esj keâef<e&le leeByee (hard
Nm
= 0.87 drawn copper) kesâ yeveles nw~ Deewj Ùen ceeFkeâe Éeje Fvmeguesšs[
Ng neslee nw~
Electrical 50000 (MCQ) Volume II 237 YCT
855. (a) 900. (b)
E E Eg − v
N∝ b ∝ b ∵ Ia =
φ Ia
Ra
D.C. meerjerpe ceesšj ceW, T ∝ φIa (φ ∝ Ia)
T ∝ Ia2 240 − 220
∴ Ia = = 100Amp
meceevlej ceW ßesCeer ceesšj peesÌ[ves hej Oeeje 0.2
Ia
nce peeveles nw, DeefOekeâlece o#elee hej-
Ia = heefjJele&veerÙe neefve · efmLej neefve
2
I
2 Dele: heefjJele&veerÙe neefve · ( Ia )2 R a mes
Ta ∝ a Deye, heefjJele&veerÙe neefve · efmLej neefve · 100 ×100 × 0.2
2
efmLej neefve · 2000 W
Ia2 T
⇒ Ta ∝ = Ta = 938. (b)
4 4 Flux control method
861. (a) T = K φ Ia
efo° Oeeje ceesšj ceW Flux keâes Rated flux mes IešeÙee ner pee mekeâlee nw yeÌ{eÙee veneR pee
Eb 1 mekeâlee keäÙeeWefkeâ flux yeÌ{eves mes Winding saturate nes peeSieer
N∝ ∝ .........(i) ( ∵ DeecexÛej ØeeflejesOe veieCÙe nw~) FmeefueS φ ↓ hej T ↓ & ω ↑
φ φ
Pe = Eb Ia
T ∝ φI a ∝ φ2 .........(ii) Pm = T ↓ ω ↑ ( Pe = Pm )
meceer. (i) Deewj (ii) mes Eb I a = T ↓ ω ↑
1
N∝ Dele: Ùen Constant power & variable torque method nw~
T 944. (a)
863. (c) [er.meer ceesšj ceW pewmes ner Jeesušlee Iešsieer DeecexÛej keâjWš yeÌ{ peeÙesiee
T ∝ P2 Deewj Ûeeue ceW keâceer nes peeÙesieer~
Ùee P ∝T
2
∵ I a = I se =
Vt
P= T Ra + Rse
3T1 Vt ↓ then I se ↑
P2 = P1 × = 3P1 = 1.732 P ∵ φ ∝ I se
T1
1 1
P ceW ØeefleMele Je=efæ = 75% N∝ ∝
876. (c) φ I se
efmLej Heäuekeäme kesâ efueS Dele: ieefle Ieš peeÙesieer~
1004. (d)
1000
Ph = × 500 = 250 W E b2 N 2
2000 =
2 E b1 N1
1000
Pe = 200 × = 50W 600
2000 242 − × 238
Ùee R = 900
Ph + e = 250 + 50 = 300W
20
877. (a)
R = 4.167 Ω
MetvÙe Yeej Glheeefole Meefòeâ (P) = E b × Ia
1005. (a)
= (25 − 1.5 × 0.8) × 1.5 = 35.7 W
peye efmLej ieefle
FmeefueS N 2 = N1 = 1440 rpm
Ie<e&Ce Deewj JeeÙeg Ie<e&Ce neefve = MetvÙe Yeej hej Glheeefole Meefòeâ E b2 φ2
= 35.7 =
E b1 φ1
DeecexÛej keâe@hej neefve · ( Ia )2 R a 0.9φ1
E b2 = 220 − 10 × 1.0 × = 189 V
= ( 3.5 ) × 0.8 = 9.8W
2
φ1
kegâue neefve = 35.7 + 9.8 = 45.5 W yeueeIetCe& meceeve nw–
ceesšj keâe Fvehegš = V × Ia = 25 × 3.5 = 87.5 W FmeefueS T2 = T1
87.5 − 45.5 φ1 1
η= × 100 = 48% Ia 2 = × Ia1 = × 10 = 11.11 A
87.5 φ2 0.9
T 1T 2
Z 2Z 1
=
Ùee V2 = 55 V
š^ebmeheâe@ce&j kesâ ØeeFcejer Je meskesâC[^er meeF[ keâer DeeJe=efòe meceeve nesleer nw
Dele: š^ebmeheâece&j 55 Jeesuš, 50Hz DeeJe=efòe GlheVe keâjsiee~ DeLee&led– ØelÙeskeâ š^ebmeheâe@ce&j kesâ Éeje meePee efkeâÙee ieÙee Yeej Gvekesâ
1498. (b) ØeefleyeeOeeDeeW kesâ JÙegl›eâceevegheeleer neslee nw~
R
+
J
X
efoÙee nw– K = 0.4 šve& Devegheele 2
2
jsefšbie 2-wdg Auto T/F = 10 kVA Z1 =
Deye, ØesjCe Éeje mLeeveevleefjle Meefkeäle = (1 – K) Rating of two Z1 = ( 0.1) + (.4 )
2 2
winding transformer
= (1 – 0.4) 10 kVA = 0.01 + 0.16
= 0.6 × 10 = 0.17
= 6 kVA = 0.412
Dele: ØesjCe Éeje 6 kVA Meefkeäle mLeeveevleefjle nesieer~ Fmeer Øekeâej,
1500. (b)
( 0.05) + ( 0.2 )
2 2
efoÙee nw– Z2 =
Primary voltage (V1) = 2200 Volt = 0.0025 + .04
Secondary Voltage (V2) = 220 Volt
Transformation Ratio (a) = ? = 0.0425
= 0.206
V2
Formula : Transformation Ratio ( a ) = T1 Z 2 0.206
= =
V1 T2 Z1 0.412
220 T1 206
(a) = =
2200 T2 412
1 T1 : T2 =1:2
a= 1506. (a)
10
1501. (c)
vees Yeej keâesj neefve = V0I0 Cosφ0
Transformation ratio P = 1000 × 5× 0.2
Ùee = 1000 × 1.0
V2 N 2 I1 Ùee = 1000 watt
= = =K
V1 N1 I 2 1509. (b)
100 10 I1 V2
K= , K= = = K (™heevlejCe Devegheele mes)
110 11 I 2 V1
V2 24.5 10 = 100
=K⇒ =
V1 V1 11 1512. (b)
11 × 24.5 Heäuekeäme IevelJe ( Bmax ) ∝ ÛegcyekeâerÙe Heäuekeäme (φmax )
V1 =
10 v
∴ Bmax ∝
V1 = 26.95V f
DeefOekeâ Meefòeâ keâer Deehetefle& keâjsiee Ùee meb e f Ûele Tpee& = H × MVAbase
H = 10 MJ/MVA, MVAbase = 100 MVA
2099. (b)
Dele: mebefÛele Tpee& = 10 × 100 = 1000 MJ
efoÙee ieÙee nw– 2103. (b)
XA = 5% ef oÙee nw– VL = 11KV
XB = 5%
Xbus-bar = 2.5% I0 = 0.75Amp
ceevee], Base MVA = 100 MVA R = 5Ω
%X A × Base MVA CT Ratio = 1000 / 5
pevejsšj A keâe %Reactance =
Generator Capacity I0 = minimum line oprating current (C.T Primary)
5×100 1000 1000
= = 50% = I0 × = 0.75 × = 150 Amp
10 5 5
%X A × Base MVA 11× 103
pevejsšj B keâe %Reactance = V= L =
V
= 6351.03V
Generator Capacity 3 3
5×100 R.I0
= = 50% % of winding unprotected = × 100
10 V
%X A × Base MVA
Bus-bar keâe %efjSkeäšWme = 5 ×150
Generator Capacity = ×100 = 11.80
6351.03
2.5×100
= = 25% We want 11.80% Protection
10 % protection winding = 100 − 11.80
Total % Reactance (XT) = Generator A keâe %Reactance
= 88.2%
+ Generator B keâe %Reactance + Bus-bar keâe
%Reactance 2104. (d)
= 50 + 50 + 25 = 125% H
peÌ[lJe efmLejebkeâ (H) P.U. ceW =
Base MVA×100 Sb
Fault MVA =
Total%Reactance peneB Sb = Base MVA
100 ×100 ( MVA ) b O
= = 80 MVA HPUn = H PUO ×
125 ( MVA ) b n
2100. (a) ÙeneB "n" represents the new values
Maximum power output from alternator
"o" represents the old values
E V V2
P0g (max) = f t − t2 .R a HPUn = 20 ×
500
=100 PU
Zs Zs 100
Ef = excitation voltage = 12 KV
(MVA) bn
17.3 XPUn = X Pu 0 ×
Vt = system voltage = KV (MVA) b0
3
100
Zs = jXs = j9Ω XPUn = 2 × = 0.4 PU
Ûetbefkeâ |Zs| = 9 500
Ra = 0 per unit values of inertia and reactance are (100 and 0.4)
respectively.
12 ×17.3×10 ×10 3 3
Dele: Pog (max) = = 13.318 MW 2108. (c)
3 ×9 24
3-φ maximum power output from alternator Pole pitch = =6
4
= 3 × 13.318 = 39.954 MW
π
2101. (a) slot angle pitch =
120 volt A.C pevejsšjme& mes Skeâ ØeefleIeelekeâ efpemekeâe ØesjCeerkeâ No of slots
ØeefleIeele 4Ω mebÙeesefpele nw~ ØeefleIeelekeâ mes mecyeefvOele Meefòeâ– P
239.6 = − ×1
= = 1.148 Ω 10 102
208.68 = 25000 − 2500
(Base Voltage) 2 = 22500 W
Z Base =
Base VA 2241. (b)
(415) 2 V 30
= = 1.722Ω X d = d max = = 4.615 Ω
100 × 1000 Id min 6.5
X 1.148
X pu = s = 0.666 pu Vd min 25
Z Base 1.722 Xq = = = 2.5Ω
Id max 10
2222. (a)
efveOee&efjle DeecexÛej Oeeje 2243. (a)
500 × 1000 V 108
( Ia ) = = 262.4321 X d = max = = 10.8 Ω
I min 10
3 × 1100
leguÙekeâeueer ØeefleyeeOee Øeeflekeâuee Vmin 96
Xq = = =8 Ω
(Zs ) = R e + jX S I max 12
= 0.1 + j1.5 = 1.5033 ∠ 86.180 Ω 2252. (c)
1100 Vt 1.0
Hesâpe Jeesušlee = = 635V I= =
3 X L + XS 1.0 + 0.9
Øeefle keâuee GlheVe Jeesušlee (E p ) = Vp + Ia Zs I = 1.0 pu
= 635 + 262.432∠00 × 1.5033∠86.180
2254. (b)
E p = 769 V yesme MVA = 500MVA
2230. (b) 400
šefce&veue Jeesušlee keâes efjHeâjsvme Hesâpej uesves hej Pactual = = 400 MVA
1.0
E∠δ = V + Ia ∠φ.Zs ∠θ
Pactual 400
= 2000 + 100∠36.87 0 × 5∠80.80 Ppu = = = 0.8
PBase 500
= 2000 − 232.2 + 7442.8
E g '' = V + IX S = 1.0∠00 + j0.2 × 0.8∠00
E = (2000 − 232.2) 2 + (442.8) 2
= 1822.4V = 1.01∠9.090 pu
E−V 1.01
% Jeesušlee efveÙeceve =
× 100 ØeejefcYekeâ Deej.Sce.Sme Oeeje If '' = = 5.05 pu
V 0.2
1822.4 − 2000 2255. (d)
= × 100
2000 New Base MVA (Old KV)2
= −8.88% X d new = X d pu old × ×
Old Base MVA (New KV)2
2237. (b)
leguÙekeâeueer ceesšj kesâ efueS Gòesefpele efJeÅegle Jeenkeâ yeue 100 MVA 10 (KV) 2
= 0.4 × × = 0.44
E = V − I a Zs 75 MVA 11(KV) 2
= 1.0 − 1∠900 × 0.5∠900 2256. (b)
= 1.0 + 0.5 = 1.5 pu V sin φ + Ia X q
2238. (b) Tanθ =
V cos φ + Ia R a
E0 V
pevejsšj Éeje Glheeefole Meefòeâ P = sin δ 1× sin 00 + 1× 1.0
Xs =
1× cos φ 00 + 1× 1.0
0.5 × 2.7
Ùee sin δ = = 0.5 θ = tan −1 1 = 450
2 × 1.35
Ùee δ = 300 FmeefueS Meefòeâ keâesCe δ = 450 – 0 = 450
*HINTs
120 × 50 120 × 50
27. (c) : N s = = 1500 rpm 33. (b) : N s = = 1500 rpm
4 4
25 1500 − 1440
S= = 0.5 S= = 0.04
50 1500
ceesšj ieefle = 0.5 × 1500 = 750 rpm IetCe&keâ ceW Øesefjle $e+Ceelcekeâ Deveg›eâce Oeeje keâer JewÅegle DeeJe=efòe
28. (d) : GlheVe efJeÅegle Jeenkeâ keâer DeeJe=efòe = ( 2 − S ) f = (2 − 0.04) × 50
6 × 1000 = 98 Hz
(f ) = = 50 Hz
120 35. (b) : hetCe& Yeej hej efmuehe efjbie kesâ yeerÛe Jeesušlee
2
efmuehe S = = 0.04 = Slip× efmLej efJeÅegle Jeenkeâ yeue
50
= 0.04×50=2V
120 × 50
ceesšj keâer ieefle (N) = (1 − 0.04) 100 5
8 71. (c) : jesšj DeeJe=efòe (f r ) = =
= 720 rpm 60 3
f 5/ 3 1
120 S= r = =
29. (b) : jesšj DeeJe=efòe (f r ) = = 2 Hz fs 50 30
60
fr 2 jesšj keâe efveJesMe Meefòeâ (P2 ) = 50 − 2 = 48 kW
efmuehe (S) = = = 0.04 or 4%
f 50 1
IetCe&keâ leeceü neefve = × 48 = 1.6 kW
N − (− N s ) 30
30. (d) : efmuehe = s =2
Ns 72. (c) : Glheeefole Meefòeâ
jesšj kesâ Keguee efmeje kesâ S›eâe@me GlheVe efJeÅegle Jeenkeâ yeue keâer DeeJe=efòe Pmech = 20 kw
= 2 × 50 = 100 Hz S = 5% = 0.05
120 × 50 5
32. (c) : N s = = 1500 rpm IetCe&keâ leeceü neefve = Pmech
4 1− 5
jesšj keâer ieefle Ùeebef$ekeâ jsef[Ùeve/meskesâC[ 0.05
= × 20
2 πN s 1500 1 − 0.05
= = 2π × = 157 = 1050 w
60 60
Electrical 50000 (MCQ) Volume II 395 YCT
120 × 50 xI
2
73. (c) : leguÙekeâeueer ieefle (N s ) = = 1500 rpm
S fl = ( 0.6 ) × 5 2 × 0.05
2
4 299. (b) : Tst = st
I fl
IetCe&keâ ieefle (N) = N s (1 − 5)
= 1500(1 − 0.04) = 1440 rpm Tst = 0.45T fl
efveie&le yeueeIetCe& or
15 × 1000 × 60 Tst = 45%
=
2 π × 1440 301. (b) : Skeâ 3–hesâpe mkeäJewjue kesâpe Fb[keäMeve ceesšj keâe mšej–
= 99.47 N − m [suše mšeš&j mes mšeš& keâjles meceÙe ceesšj keâe mšeefšËie Oeeje DOL
3 VL I cos φ (Direct Online Starter) keâer leguevee ceW Skeâ efleneF& (1/3)
74. (c) : jesšj keâe efveJesMe Meefòeâ (Pin ) = kW
1000 neslee nw~
Direct on–line starting
3 × 400 × 50 × 0.8
= = 27.71kW 2
1000 Tst Isc
= × sf
Pg = Pin − keâesj neefve – mšsšj leeceü neefve Tf If
= 27.71 − 1.2 − 1.5 Star–delta starting
= 25.01kW ≃ 25 kW 2
Tst 1 Isc
75. (c) : IetCe&keâ leeceü neefve = Pg − Pmd = × sf
Tf 3 If
= 10 − 8 = 2 kw
302. (d) : ØesjCe ceesšj kesâ jesšj ceW efJeÅegle ef[«eer = 3600×OeÇJg eeW keâer
120 × 50 peesÌ[eW keâer mebKÙee
76. (b) : N s = = 1000 rpm
6
θele
1000 − 970 θmech =
S= = 0.03 P/2
1000
Pmech = 4100 + 750 = 4850 W θmech = fixed = 360o
S 0.03 P
IetCe&keâ leeceü neefve = × 4850 = × 4850 θele = 360o ×
1− S 1 − 0.03 2
= 150 W 310. (c) :
efoÙee nw– P = 4, f = 50 Hz
KφsE 2 R 2
294. (d) T = jesšj ieefle (Nr) = 1440 rpm
R 2 2 + ( sX 2 )
2
mšsšj Fvehegš Meefòeâ = 30 KW
peye efmuehe s keâe ceeve yengle efvecve neslee nw leLee jesšj keâer ieefle jesšj Fvehegš = Meefòeâ mšsšj Fvehegš Meefòeâ – kegâue mšsšj neefve
leguÙekeâeueer ieefle kesâ ueieYeie yejeyej nes lees R2 keâe ceeve sX2 kesâ ceeve = 30 – 1 = 29 KW
mes yeÌ[e neslee nw~ 120f 120 × 50
Ns = =
Fme efmLeefle ceW, p 4
T∝
s Ns = 1500 rpm.
R2 Ns − N r
efmuehe ( s ) =
T∝s Ns
Fme efmLeefle ceW yeueeIetCe& – efmuehe Je›eâ meerOeer jsKee ceW neslee nw~ s=
1500 − 1440
=
60
peye efmuehe keâe ceeve DeefOekeâ neslee nw lees ceesšj keâer ieefle Ieš peeleer nw 1550 1500
Deewj yeueDeeIetCe& DeefOekeâlece Øeehle nesiee~ s = 0.04
DeLee&led R2 = sX2 Fmekeâes hegueDeeGš yeueeIetCe& Ùee Yebpekeâ yeueeIetCe& = 4%
Rotor ohmic losses = s × Rotor input
keâne peelee nw~ = 0.04×29
s = 1.16 KW
T∝
( sX 2 )2 = 1160 W
311. (c) efoÙee nw– F = 200N d = 20m t = 25 sec
1
T∝ [∵ X 2 = constant ] Formula– P =
W
s t
Fme efmLeefle ceW yeueeIetCe& efmuehe Je›eâ DeeÙeleekeâej DeeflehejJeueÙe Øeehle F× d
nesiee~ =
t
Electrical 50000 (MCQ) Volume II 396 YCT
200 × 20 Tr = K2E2Ircosφr
= Tr ∝ E2Ircosφr
25
= 160W Tr ∝ Pr
317. (b) P = Power (Meefkeäle)
efmLej Ùee ØeejefcYekeâ yeueeIetCe& Ts = K1E2 I2 cosφ2 Dele: jesšj ceW Øesefjle Meefkeäle (Pr) kesâ yeÌ{ves mes ceesšj kesâ jesšj hej
E2 R2 ueieves Jeeuee yeueeIetCe& (Tr) yeÌ{lee nw~
Ts = K1E 2 × ×
R 22 × X 22 R 22 + X 22 322. (d) ØesjCe ceesšj ceW 0 – 10% efmuehe (Ùee 100 – 90% ieefle)
K1E 22 R 2 ceesšj Éeje efJekeâefmele šeke&â (DeeIetCe&) efmuehe kesâ meceevegheeleer neslee nw~
Ts = FmeefueS ceesšj mebÛeeueve efoS ieS DeeIetCe& (šeke&â) kesâ ceeve kesâ efueS
R 22 + X 22
Skeâ efmLej ieefle mes keâeÙe& keâjlee nw~
Ùeefo mehueeF&& Jeesušlee V efmLej nes leye Heäuekeäme φ leLee E2 oesveeW efmLej
neWies~
R2 R
Ts = K1 V 2 = K 2 22
R 22 + X 22 Z2
R2
Ts ∝
Z22
4 4
Ts ∝ 2
⇒ Ts ∝
6 36
Ts ∝ 0.111 T ∝ S(slip)
319. (b) T1 ∝ V 2 peye S keâe ceeve (0 – 10%) nes~
Jeesušspe keâes 10% yeÌ{eves hej, Dele: #es$e W hej mLeeÙeer nesiee~
2
325. (b) efkeâmeer ceesšj keâe yeue DeeIetCe& Gme ceesšj kesâ jesšj kesâ ef$epÙee
11 leLee Gme hej ueieeÙes ieÙes heeefM&Jekeâ yeue keâe iegCeveheâue nw~
T2 ∝ V
10 yeue DeeIetCe& τ = r × F
T1 V2 = r.Fsin θ
= × 100 Continuous rating of motor
T2 121V 2
2
T1 100 3
( 746 × 100 )
2
= × 20 + 74600 × × 10 + 0 × 20
T2 121 = 4
T2 121 20 + 10 + 20
= = 53405.4725 kW = 71.58 H.P
T1 100 Approx- 72 H.P
121 120
T2 = × T1 333. (b) heesue efheÛe = = 12
100 10
1.21T1 − T1 keäJee@Ùeue efheÛe = 11 – 1 = 10
yeueeIetCe& ØeefleMele Je=efæ = × 100
∵ keäJee@Ùeue efheÛe, heesue efheÛe kesâ yejeyej nesves hej kegâC[ueve Full
T1
= 0.21 × 100 pitch winding nesleer nw~
= 21% Dele: GheÙeesie keâer ieÙeer keäJee@Ùeue efheÛe (short pitch winding)
320. (d) ØesjCe ceesšj keâe yeueeIetCe& Oeeje, heeJej Hewâkeäšj leLee Heäuekeäme short pitch winding =
No. of pole
hej efveYe&j keâjlee nw~ Pole pitch
T ∝ φIr cos φr 10
= ×100 = 83.30%
12
OeeJeve DeJemLee ceW IetCe&keâ hej ueieves Jeeuee yeueeIetCe& 338. (a) ef$ekeâuee [suše Deeyeæ ceW VL = Vph
Tr = KφI r cos φr ( N − m )
leLee ueeFve Oeeje (IL) = 3 Iph
Ûebtefkeâ E2 ∝ φ DeLee&le E2 = K1φ DeLee&led ceesšj kesâ ØelÙeskeâ JeeFeE[ie kesâ Deej-heej Jeesušlee Yeer 400
φ = E2 / K1 Volt nesieer keäÙeeWefkeâ (VL = Vph)
Ghejeskeäle yeueeIetCe& kesâ met$e ceW φ keâe ceeve jKeves hej 340. (c) efoÙee nw,
K ØeejbefYekeâ Oeeje I
Tr = E 2 I r cos φr = st = 12.56
K1 hetCe& Yeej Oeeje IF
357. (b) oes ØesjCe ceesšjeW kesâ meesheeveer efveÙeb$eCe ceW efYeVe-efYeVe 4
I
Y= ieefleÙeeB Øeehle keâer pee mekeâleer nw~
T
120 f
R 2 + ( sX ) ( sX ) ……..(ii)
2 2
R2 N1 = mebÛeÙeer kesâme ceW
Y= = + P1 + P2
K φsER K φsER K φsER
Ghejesòeâ meceer. keâe efmuehe s keâer Dehes#ee DeJekeâueve keâjkesâ leLee Gmes 120 f
N2 = DeJekeâue kesâme ceW
MetvÙe kesâ yejeyej jKeves hej DeefOekeâlece yeueIetCe& kesâ efueS Mele& %eele keâer P1 − P2
pee mekeâleer nw~ N3 =
120 f
& N4 =
120f
dy −R X 2 P1 P2
= + =0
ds K φs E K φER
2 359. (a) jesšj keâe ØeeflejesOe R2 =0.06Ω
R X2 ØeefleIeele X2 = 0.3Ω
Ùee = Let us additional Resistance = R Ω
K φs E K φER
2
Then
R X2 R2+R = X2
Ùee =
s2 R 0.06 + R = 0.3
R = s2 X 2
2 R = 0.24Ω
R = sX 361. (c) Induction Motor kesâ efkeâmeer Yeer oes lead (Phase) keâes
R = Rotor Resistance hejmhej heefjJeefle&le keâjkesâ Induction Motor kesâ Rotor kesâ Ietceves keâer
X = Rotor Reactance efoMee yeoueer pee mekeâleer nw~
346. (b) ØeejbefYekeâ yeueeIetCe& = 300Nm Induction motor keâes 3-φ supply osv es hej motor keâer Slip
mšej [suše mšeš&j keâe ØeÙeesie keâjves ceW s nQ~
300 N S − Nr
= 100 Nm s=
3 NS
349. (d) Resistance = 0.45Ω
Nr N
external resistance = 0.5Ω Slip = 0.05 s = 1− ⇒ r = 1− s
Reactance = ? NS NS
total resistance = 0.5 + 0.45 = 0.95 2-φ keâes hejmhej Interchanged keâj osves hej Rotor kesâ Ietceves keâer
Req = 0.95Ω
at Full load torque
efoMee yeoue peeSieer leye ceevee efmuehe s1 nw
R = XS NS + Nr N S = Speed of stator field
0.45 =0.05X s1 =
NS N r = Speed of Rotor
0.45
X= = 9Ω Nr
0.05 = 1+ = 1+1− s
0.95 NS
S= = 0.155
9 s' = 2 − s
S = 0.1
Electrical 50000 (MCQ) Volume II 398 YCT
362. (b) DOL starter ceW Induction motor meerOes line mes 367. (c) ØesjCe ceesšj ceW,
voltage uesleer nw FmeefueS starting torque yengle GÛÛe neslee nw 2
DeeIetCe& Tmax ∝
V
peyeefkeâ Star-delta starter ceW starting kesâ meceÙe Induction f
motor phase voltage uesleer nw efpememes Voltage kesâ Respect Ns ∝
1
current Yeer keâce nes peeleer nw~ P
1
VL2 cos φ STmax ∝
f
mšej cesW Meefòeâ Z ph
1 Ùen efveÙele DeeJe=efòe kesâ meeLe OeÇgJeeW keâer mebKÙee ceW heefjJele&ve keâer mheer[
= =
[suše cesW Ùee DOL cesW Meefòeâ 3VL2 cos φ 3 kebâš^esue efJeefOe nQ~
Z ph 120f 120 × 50
371. (a) : N s = = = 1000 rpm
P 6
[suše cesW Ùee DOL cesW Meefòeâ
mšej ceW Meefòeâ = N − N 1000 − 875
3 Smax T = s = = 0.125 Pu
Ns 1000
600
mšej ceW Meefòeâ = mšej cesW Meefòeâ = 200 Nm R2
3 Smax T =
363. (d) Stator input power = 50kW X2
Stator power loss = 2kW Ùee jesšj ØeefleIeele Øeefle Hesâpe
Rotor input power = 50–2 R2 0.25
X2 = = = 2Ω
= 48kW Smax T 0.125
Stator frequency fs = 50Hz
100 5 R2 0.1 1
Rotor frequency f r = = Hz 372. (c) : Smax T = = =
60 3 Smax T 0.92 9.2
5 Smax T S
fr + F
Slip S = = 3 Tmax
=
Sf Smax T
f s 50 Tf 2
1 1/ 9.2 0.03 1
S= = +
30 ×
0.03 1/ 9.2 2
1 = 1.948
Rotor copper loss = S×Rotor Input = × 48
30
Pout 10
Rotor Copper loss = 1.6 KW 373. (a) : Pin = = = 11.628 kW
η 0.86
364. (b) Tg = rotor gross output in watts hetCe&Yeej Oeeje If =
Pin
2π N r 3 × VL × P.f
60 11.628 × 1000
peneB Nr = heÇsjCe ceesšj keâe jesšj ieefle nw = = 20.98
3 × 400 × 0.8
2000 × 60 400
Tg = I sc = × 30 = 120A
2 × 3.14 × 480 100
Tg = 39.80 N-m mšej [suše mšeš&j kesâ meeLe ØeejefcYekeâ Oeeje
366. (a) ØesjCe ceesšj ncesMee efmeb›eâesveme ieefle mes kegâÚ keâce ieefle hej 1
Ietceleer nQ~ = × 120 = 40A
3
ÙeneB, jesšj keâer ieefle, Nr = 540 rpm Ist 40
FmeefueS = = 1.9
Ns = 600 rpm. I f 20.98
120f N s − 0.6 N s
Ns = 374. (d) : S = = 0.4
P Ns
120 × 50
600 = leeceü neefve = S × jesšj keâes Meefòeâ efveJesMe
P
= 0.4 Pin
120 × 50
P= jesšj efveie&le (Pout ) = Pin − 0.4 Pin
600
P = 10 = 0.6 Pin
S 14930.65
= × 100 = 90.1%
I 2 = S (1 − S) 16570.815
[∵ not considering stator impedance and no load 399. (c) : efoÙee nw- Ùebeef$ekeâ Meefòeâ (Pmech) = 90 W
current] efJeÅegle Meefòeâ (Pelec) = 100 W
I1 ∝ S (1 − S) P
o#elee (η) = mech × 100 =
90
× 100
for slip at maximum current Pelec 100
dI1 = 90%
=0 400. (d) : Skeâ ØesjCe (Fb[keäMeve) ceesšj keâe Hegâue uees[ še@ke&â
dS
d (yeueeIetCe&) mkeäJewjue kesâpe Ùee efmuehe efjbie šeFhe hej efveYe&j veneR keâjlee
∴ S (1 − S) = 0 nw~ yeefukeâ Skeâ ØesjCe (Fb[keäMeve) ceesšj keâe Hegâue uees[ še@ke&â efvecve
dS
d keâejkeâeW hej efveYe&j keâjlee nw–
S − S3/ 2 = 0
dS T ∝ φIf cosφf ceW
1 3
S− S=0 mšsšj Éeje Glheeefole Heäuekeäme = (φ)
2 2
1 3
ØeefleHesâpe jesšj efJeÅegle Oeeje = (If)
S = S=0 jesšj hee@Jej Hewâkeäšj = (cos φ)
2 2
Electrical 50000 (MCQ) Volume II 400 YCT
403. (a) ceesšj keâer efmeb›eâesveme mheer[ 413. (c) : efoÙee nw– ceesšj #ecelee = ceesšj efveie&le =7.46kW
120f 120 × 50 ceesšj o#elee =85%
NS= = = 750 rpm
p 8 ceesšj efveefJe° Meefòeâ =?
750 – 720 output power
Deye Hegâue uees[ hej efmuehe SFL = = 0.04 %η = × 100
750 input power
R2 0.04 7.46
a= = = 0.133333 85% = × 100
X2 0.3 Input
Tm a 2 + SFL
2
( 0.133333) + ( 0.04 )
2 2
7.46 × 100
= = Input = = 8.776 KW
Tf 2as FL 2 × 0.133333 × 0.04 85
≃ 8.78 KW
Tm
= 1.8 Dele: Fvehegš Meefòeâ = 8.78 KW
Tf
415. (b) DeefOekeâ o#elee Øeehle keâjves kesâ efueS Fb[keäMeve ceesšj keâer
408. (b) : Air gap power Pg = 2πNSTd ( ) efmuehe keâce nesveer ÛeeefnS~
Rotor power ( Pr ) = 2πN r Td o#elee =
Pout
= (1 − s )
Pin
leye Rotor cu loss ( Prc ) = Pg − Pr
Prc = 2πN s Td − 2πN r Td 477. (a) : 2 OeÇgJe kesâ meeLe leguÙekeâeueer ieefle DeefOekeâlece nesieer~
120f 120 × 50
Prc 2πTd ( NS − N r ) leguÙekeâeueer ieefle ( N s ) =
=
= P 2
NS NS
N s = 3000 rpm
N − Nr
Prc
2πNSTd
= S
NS
( 2πNSTd = Pg ) IetCe&keâ keâer JeemleefJekeâ ieefle (N r ) = Ns(1 − s)
= 3000(1 − 0.04)
Prc N − Nr = 2880 rpm
=S S= s
Pg NS
478. (c) :
Rotor cu loss N r = N s (1 − s )
i.e., = slip(S)
Rotor input 120 × 50
= (1 − 0.05)
409. (a) : 6
N = 950 rpm
479. (c) : ØeejcYeve kesâ meceÙe N = 0
Ns − N Ns − 0
FmeefueS S = = = 1.0
N r → jesšj keâer ieefle Ns Ns
481. (a) : jesšj Oeeje keâer DeeJe=efòe (f r ) = 0.02 × 50 = 1 Hz
N s → Induction ceesšj keâer synchronousspeed
S → slip 120 × 50
482. (a) : N s = = 750 rpm
8
output of machine 750 − 727.5
412. (b) Ûetbefkeâ ceMeerve keâer o#elee (η ) = S= = 0.03
input of machine 750
output of machine = input of machine ×η jesšj efJeÅegle Jeenkeâ yeue DeeJe=efòe = 0.03 × 50 = 1.5 Hz
2π N S T 1000 − 950
= 3 × VI cos φ ×η 483. (c) : efmuehe (S) =
60 1000
Ùeefo ceMeerve keâe heeJej hewâkeäšj Deewj o#elee efmLej nes = 0.05
(cosφ,η=constant) lees jesšj Oeeje DeeJe=efòe 0.05 × 50 = 2.5 Hz
N ∝V 484. (d) : S =
2
= 0.04
Dele: vees uees[ efmLeefle ceW Ùeefo 3-hesâpe ØesjCe ceesšj keâe efveOee&efjle 50
Jeesušspe (V) keâes DeeOee keâjves hej mšsšj Oeeje leLee ieefle oesveeW Ieš 120 × 50
ceesšj ieefle (N) = (1 − 0.04)
peeÙesieer~ peneB 8
V= mehueeF& Jeesušspe = 720 rpm
5500 5500 ∴ = 1
887. (a) voltage = = = 3175.4 V We2 f 2
3 1.732
2
120f 120 × 50 f
891. (a) Ns = = = 500 rpm We2 = 2 × We1
P 12 f1
(P) = 3V.Icos φ 100 × 100 × 100
= = 400 W
= 3 × 440 ×100 × 0.8 50 × 50
E b V − IR
N dc = = DeLee&le Ndc ∝ ( V − IR ↓ ) = DeefOekeâ
Kφ Kφ
Eb V − IZ
N ac = = DeLee&le N ac ∝ ( V − IZ ↑ ) = keâce
Kφ Kφ
(c) Tower cranes/še@Jej ›esâve (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
(d) Belt conveyor/yesuš keâvJesÙej 56. Travelling grate stoker can burn coals at the
rates of:
51. Bucket elevators are used for:
yeeušer efueheäš.......kesâ efueS GheÙeesie efkeâÙee
peelee nw~ š^wJeefuebie Yešd"er mšeskeâj .............. keâer oj hej keâesÙeues
keâes peuee mekeâlee nw~
(a) Carrying coal in horizontal dirction/#eweflepe efoMee
ceW keâesÙeues keâes ues peeves (a) 50–75 kg/m2 per hour
(b) 75–100 kg/m2 per hour
(b) Carrying coal in vertical direction/
(c) 100–150 kg/m2 per hour
TOJee&Oej efoMee ceW keâesÙeues keâes ues peeves
(d) 150–200kg/m2 per hour
(c) Carrying coal in any direction/keâesÙeues keâes efkeâmeer
57. Capacity of the underfeed stoker is of the order
Yeer efoMee ceW ues peeves of:
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR Deb[jheâer[ mšeskeâj #ecelee..........kesâ ›eâce keâe neslee nw~
52. The amount of air which is supplied for
(a) 100 to 200 kg of coal burned per hour/
complete combustion is called:
100 mes 200 kg keâesÙeues keâe onve Øeefle Iebše
hetCe& onve kesâ efueS mehueeF& keâer peeves Jeeueer JeeÙeg keâer
(b) 100 to 500 kg of coal burned per hour
cee$ee keâes keâne peelee nw–
100 mes 500 kg keâesÙeues keâe onve Øeefle Iebše
(a) Primary air/ØeeLeefcekeâ JeeÙeg
(c) 100 to 2000 kg of coal burned per hour
(b) Secondary air/efÉleerÙekeâ JeeÙeg
100 mes 2000 kg keâesÙeues keâe onve Øeefle Iebše
(c) Tertiary air/le=leerÙekeâ JeeÙeg
(d) 100 to 4000 kg of coal burned per hour
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
100 mes 4000 kg keâesÙeues keâe onve Øeefle Iebše
Electrical 50000 (MCQ) Volume II 410 YCT
58. Economisers are usually used in boiler plant 64. Blowing down of boiler water is the process:
working above: yee@Ùeuej peue kesâ veerÛes yueesefJebie keâer Øeef›eâÙee nesleer nw–
Deeceleewj hej yee@Ùeuej ceW Fkeâesvee@ceeFpeme& keâe heÇÙeesie (a) To reduce the boiler pressure/yee@Ùeuej ØesMej keâes
hueevš kesâ ..........mes Thej keâeÙe& nsleg efkeâÙee peelee nw– keâce keâjves kesâ efueS
(a) 30 kgf/cm2 (b) 50 kgf/cm2 (b) To increase the steam temperature/Yeehe leeheceeve
2
(c) 70 kgf/cm (d) 90 kgf/cm2 keâes yeÌ{eves kesâ efueS
59. Superheating of steam is desirable for: (c) To control the solid concentration in the
Yeehe keâe Deefleleeheve ............ kesâ efueS JeebÚveerÙe neslee nw~ boiler water by removing some of the
(a) Increasing the efficiency of Rankine concentrated saline water/yee@Ùeuej kesâ heeveer ceW kegâÚ
cycle/jQefkeâve Ûe›eâ keâer o#elee yeÌ{eves leer›e Keejs heeveer keâes nšekeâj keâ"esjlee keâes efveÙebef$ele keâjvee
(b) Reducing initial condensation losses/ (d) None of the above/FveceW mes keâesF& veneR
ØeejefcYekeâ mebIeveve neefve keâce keâjves 65. Reheat factor is the ratio of:
(c) Avoiding too high moisture in the last stage efj-nerš hewâkeäšj..........keâe Devegheele neslee nw~
of turbine/šjyeeFve kesâ Deefvlece mšspe ceW yengle DeefOekeâ (a) Isentropic heat drop to useful heat drop/
veceer mes yeÛeeves Fmesvš^e@efhekeâ nerš [^ehe Deewj GheÙeesieer nerš [^ehe
(d) All of the above/Ghejeskeäle meYeer (b) Adiabatic heat drop to isentropic heat
60. Thermal efficiency of the steam plant is of the drop/Sef[Ùeeyewefškeâ, nerš [^ehe Deewj Fmesvš^e@efhekeâ nerš
order of: [^ehe
Yeehe mebÙeb$e keâe leeheerÙe o#elee ........... kesâ ›eâce keâe neslee (c) Cumulative actual enthalpy drop for the
nw~ stages to total is isentropic enthalpy heat
(a) 30% (b) 50% drop/mšspeeW kesâ efueS mebÛeÙeer JeemleefJekeâ SvLewuheer [^e@he
(c) 60% (d) 80% Deewj kegâue Fmesvš^e@efhekeâ SvLewuheer nerš [^ehe
61. In a regenerative air preheater, the heat is (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
transferred: 66. Compounding of steam turbine is done for:
Skeâ hegveÙeexpeer JeeÙeg Øeer-neršj ceW, nerš š^ebmeheâj neslee nw– Yeehe šjyeeFve keâer keâcheeGefv[bie...........kesâ efueÙes keâer
(a) By direct mixing/meerOes efceßeCe mes peeleer nw~
(b) By extracting some gas from the furnace/Yešd"er (a) Reducing the work done/keâece keâes keâce keâjves
mes kegâÚ iewme efvekeâeueves mes (b) Increasing the rotor speed/jesšj ieefle keâes yeÌ{eves
(c) From heating an intermediate material and (c) Reducing the rotor speed/jesšj ieefle keâes keâce keâjves
then heating the air from this material/ceOÙeJeleea (d) Balancing the turbine/šjyeeFve keâes mevlegefuele keâjves
heoeLe& keâe leeheve Deewj efHeâj JeeÙeg keâe leeheve Fme heoeLe& mes 67. In throttle governing:
(d) None of the above/Ghejeskeäle ceW mes mes keâesF& veneR LeÇe@šue ieJeefveËie ceW–
62. The height of chimney in a steam power plant (a) Larger heat drop is available/leehe ceW efiejeJeš yeÌ[er
is governed by:
cee$ee ceW neslee nw
Yeehe Meefòeâ mebÙeb$e ceWs efÛeceveer kesâ TBÛeeF& keâe efveOee&jCe
(b) Lesser heat drop is available/leehe ceW efiejeJeš keâce
............. mes efkeâÙee peelee nw~
cee$ee ceW neslee nw
(a) Flue gases quantity/oiOe iewmeeW keâer cee$ee
(b) The gases quantity/iewmeeW keâer cee$ee (c) There no effect on heat drop/leehe ceW efiejeJeš hej
(c) Control of pollution/Øeot<eCe kesâ efveÙeb$eCe keâesF& ØeYeeJe veneR heÌ[lee
(d) All of the above/Ghejeskeäle meYeer (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
63. In boilers, the feed water treatment is done 68. The commonly used material of condenser
mainly for removing……troubles: tubes is:
yee@ÙeuejeW ceW, Yeefjle peue š^eršcesvš cegKÙe ™he mes mebIeefve$e šdÙetyeeW kesâ efueÙes Deeceleewj hej ØeÙeesie efkeâÙee peeves
hejsMeeefveÙeeW keâes nševes kesâ efueS efkeâÙee peelee nw– Jeeuee heoeLe& nw–
(a) Corrosion/pebie (a) Aluminium/SuÙegceerefveÙece
(b) Scale formation/mkesâue heâecexMeve (b) Cast iron/keâÛÛee ueesne
(c) Carry over/kewâjer DeesJej (c) Admiralty brass/S[efcejušer yeÇe@me
(d) All of the above/Ghejeskeäle ceW mes meYeer (d) Mild steel/ceeFu[ mšerue
271. Secondary air is the air used to: yeÌ[s Deekeâej kesâ Jee<he mebÙeb$e Deewj veeefYekeâerÙe mebÙeb$e
efÉleerÙekeâ JeeÙeg Jen JeeÙeg nesleer nw efpemes..........kesâ efueÙes efkeâmekesâ efueS Devegketâue nesles nQ–
ØeÙeesie efkeâÙee peelee nw- (a) peak loads/heerkeâYeej
(a) Reduce the flame length/ueew keâer uecyeeF& keâce keâjves (b) intermediate loads/FCšjceeref[Sš Yeej
(b) Increase the flame length/ueew keâer uecyeeF& yeÌ{eves (c) base loads/yesme Yeej
(c) Transport and dry the coal (d) both base and peak loads/yesme Yeej Deewj heerkeâ Yeej
keâesÙeuee keâes hengbÛeeves leLee megKeeves oesveeW
(d) Provide air around burners for getting 276. The efficiency of a nuclear power plant is less
optimum combustion/Dee@efhšcece onve kesâ efueS yeve&j than that of a coventional fuel fired thermal
kesâ ÛeejeW Deesj JeeÙeg Øeoeve keâjves plant because of
272. Pressure of sulphur in coal will result in: veeefYekeâerÙe Meefòeâ mebÙeb$e keâer o#eelee hejchejeiele FËOeve
keâesÙeues ceW meuheâj kesâ oyeeJe keâe heefjCeece nesiee–
heâeÙe[& leeheerÙe mebÙeb$e mes keâce nesleer nw, efkeâme keâejCe?
(a) Corroding air heaters/keâe@jexef[bie JeeÙeg neršme&
(a) less rejection of heat in the condenser
(b) Spontaneous combustion during coal storage
mebIeefve$e ceW T<cee keâe keâce DemJeerke=âefle
keâesÙeuee YeC[ejCe kesâ oewjeve mJele: onve
(b) higher temperature conditions/GÛÛe leehe efmLeefle
(c) Causing clinkering and slagging
(c) higher pressure conditions/GÛÛe oeye efmLeefle
efkeäuebkeâeEjie Deewj muewefiebie keâe keâejCe
(d) low temperature and pressure conditions
(d) All of the above/Ghejeskeäle meYeer
efvecve leehe Deewj oeye efmLeefle
Electrical 50000 (MCQ) Volume II 432 YCT
1. A pumped storage plant is a base load
2. peue efJe%eeve plant
(Hydrology) heche mšesjspe mebÙeb$e Skeâ yesme Yeej mebÙeb$e nw~
277. A hydroelectric power station is commonly 2. The starting time of a pumped storage
found in plant is very short
neF[^esFuesefkeäš^keâ Meefòeâ kesâvõ meeceevÙele: .............. ceW heche mšesjspe mebÙeb$e keâe ØeejbYeve meceÙe yengle keâce
heeS peeles nQ~ neslee nw~
(a) desert areas/ce®mLeueerÙe #es$eeW ceW 3. Reversible turbines and pumps are highly
(b) hilly areas/heneÌ[er #es$eeW ceW suitable for pumped
(c) swamps/oueoueeW ceW heche mšesjspe mebÙeb$e kesâ efueS ØeefleJeleea šjyeeFveW Deewj
(d) grasslands/Ieeme mLeueeW ceW heche yengle Devegketâue nesleer nw
278. In Francis turbine runner, the number of Which of the statements given above are
blades is usually of the order of correct ?
øeâebefmeme šjyeeFve jvej ceW yues[ keâer mebKÙee Deeceleewj hej Ghejesòeâ keâLeveeW ceW mes keâewve melÙe nw~
›eâce keâer nesleer nw– (a) 1 and 2/1 Deewj 2 (b) 1 and 3/1 Deewj 3
(a) 16 – 24 (b) 8 – 10 (c) 2 and 3/2 Deewj 3 (d) 1, 2 and 3/1,2Deewj 3
(c) 6 – 8 (d) 3 – 6
282. In pump storage hydropower plant, the
279. The maximum head of a Kaplan turbine is electrical machine is made to work alternately
limited to
as generator and motor. The efficiency of the
Skeâ keâheueeve šjyeeFve keâe DeefOekeâlece Meer<e& ................ generator working at the same electric power
lekeâ meerefcele nw~ level is
(a) 30 m (b) 70 m heche mšesjspe neF[^esheeJej mebÙeb$e ceW pevejsšj Deewj ceesšj kesâ
(c) 125 m (d) 200 m
™he ceW Jewkeâefuhekeâ ™he mes keâeÙe& keâjves nsleg JewÅegle ceMeerve
280. Which of the following statements is/are
correct? yeveeF& peeleer nw lees Skeâ ner efJeÅegle Meefòeâ mlej hej keâeÙe&
In pumped storage power plants, keâjves Jeeues pevejsšj keâer o#elee nw–
heche mšesjspe heeJej mebÙeb$e nsleg efvecve ceW mes keâewve–mee (a) greater than that as motor/ceesšj mes pÙeeoe
keâLeve melÙe nw?
(b) equal to that as motor/ceesšj kesâ yejeyej
(a) water is recirculated through water turbines
(c) less than that as motor/ceesšj kesâ keâce
peue šjyeeFve kesâ ceeOÙece mes peue hegve: ØeJeeefnle neslee nw
(d) greater or less than that as motor depending
(b) reversible turbines are used which operate as
turbines for power generation during peak on the type of the machine
load hours and as pumps for pumping water ceMeerve kesâ Øekeâej kesâ DeeOeej hej ceesšj keâer leguevee ceW
during peak-off hours DeefOekeâ Ùee Gmemes keâce
ØeefleJeleea šjyeeFveeW keâe GheÙeesie efkeâÙee peelee nw pees efkeâ 283. A 'Pumped storage hydroelectric plant'
heerkeâ Yeej IebšeW kesâ oewjeve efyepeueer kesâ Glheeove kesâ efueS consists of:
šjyeeFveeW kesâ ™he ceW keâeÙe& keâjleer nw Deewj heerkeâ–Dee@heâ heche mšesjspe peueefJeÅegle mebÙeb$e ceW neslee nw–
IebšeW kesâ oewjeve hebefhebie peue kesâ efueS hebhe kesâ ™he ceW keâeÙe& (a) A synchronous machine and a multistage
keâjleer nw centrifugal pump in on shaft
(c) plain Francis turbines are used Skeâ Meeheäš ceW Skeâ efmev›eâesveme ceMeerve Deewj Skeâ
meeos øeâebefmeme šjyeeFve keâe GheÙeesie efkeâÙee peelee nw ceušermšspe mesvš^erheäÙetieue heche
(d) both (a) and (c) above are employed (b) A synchronous machine, a reaction turbine,
Ghejesòeâ (a) Deewj (c) oesveeW ØeÙegòeâ efkeâS peeles nQ and a multistage centrifugal pump all in one
281. Consider the following statements regarding shaft
pumped storage plants: Skeâ ner Meeheäš hej Skeâ efmev›eâesveme ceMeerve, Skeâ
heche mšesjspe mebÙeb$e mes mecyeefvOele efvecve keâLeveeW hej Øeefleef›eâÙee šjyeeFve, Deewj Skeâ ceušermšspe mesvš^erheäÙetieue
efJeÛeej keâjW– heche
Electrical 50000 (MCQ) Volume II 433 YCT
(c) An induction generator, a synchronous heche mšesjspe mebÙeb$e, Yeej DeeJe=eòf e efveÙeb$eCe kesâ efueS
machine and a reaction turbine, all in one ØeÙeesie efkeâS pee mekeâles nQ~
shaft
Which of the above statements is/are correct?
Skeâ ner Meeheäš hej Skeâ Fb[keäMeve pevejsšj Skeâ Ghejesòeâ ceW mes keâewve mes keâLeve melÙe nw?
efmev›eâesveme ceMeerve Deewj Skeâ Øeefleef›eâÙee šjyeeFve (a) 1 only/kesâJeue 1
(d) An induction generator, a synchronous
(b) 1 and 2 only/kesâJeue 1 Deewj 2
machine, and a multistage centrifugal pump,
all in one shaft (c) 1, 3 and 4/1, 3 Deewj 4
Skeâ ner Meeheäš hej Skeâ Fb[keäMeve pevejsšj, Skeâ (d) 3 and 4 only/3 Deewj 4 kesâJeue
efmev›eâesveme ceMeerve Deewj Skeâ ceušermšspe mesvš^erheäÙetieue 286. In India, pumped storage power plant
heche Yeejle ceW heche mšesjspe heeJej mebÙeb$e
284. Consider the following statements: (a) does not exist at all/keâneR veneR nw
Pumped storage plants when operated in (b) exists is Rajasthan alone/kesâJeue jepemLeeve ceW nw
interconnected power systems serve to (c) exists in Kadampurai (TN)/keâocehegjeF& (TN) ceW nw
efvecve keâLeve hej efJeÛeej keâjW: (d) exists in Haryana/nefjÙeeCee ceW nw
hebhe mšesjspe mebÙeb$e peye Fvšjkeâveskeäšs[ Meefòeâ mebÙeb$e ceW 287. Example of base load stations are
ØeÛeeefuele nesles nQ lees– yesme Yeej kesâvõ keâe GoenjCe nw~
(a) thermal/Lece&ue
1. increase load factor of steam plant
(b) hydro/neF[^es
Jee<he mebÙeb$e keâe Yeej iegCeebkeâ yeÌ{eles nQ~
(c) both a and b/(a) Deewj (b) oesveeW
2. provide added capacity to meet peak loads
(d) gas turbine/iewme šjyeeFve
heerkeâ Yeej keâes hetje keâjves kesâ efueS Deefleefjòeâ #ecelee Øeoeve
288. Which of following is a medium and low head
keâjles nQ~ turbines?
3. decrease load factor of steam plant efvecveefueefKele ceW mes keâewve mee Skeâ ceOÙece Deewj efvecve
Jee<he mebÙeb$e keâe Yeej iegCeebkeâ Iešelee nw~ Meer<e& (ns[) šjyeeFve nw~
4. provide added capacity to meet base loads (a) Pelton and Kaplan turbines
yesme Yeej keâes hetje keâjves kesâ efueS Deefleefjòeâ #ecelee Øeoeve hesušve Deewj keâhueeve šjyeeFve
keâjlee nw~ (b) Kaplan and Francis turbines
Which of the above statements are correct? keâhueeve Deewj øeâeefmebme
Ghejesòeâ ceW mes keâewve mes keâLeve melÙe nw? (c) Francis and Kaplan turbines
(a) 1, 2, 3 and 4/1, 2, 3 Deewj 4
øeâeefvmeme Deewj keâhueeve šjyeeFve
(d) None of above/keâesF& veneR
(b) 1 and 3 only/1 Deewj 3 kesâJeue
289. Water hamming process in pen-stocks results
(c) 1 and 2 only/1 Deewj 2 kesâJeue in
(d) 3 and 4 only/3 Deewj 4 kesâJeue hesve mše@keâ ceW Jeešj nwefcebie Øeef›eâÙee keâe heefjCeece nw –
[U.P.S.C. I.E.S. E.E.-II, 2010] (a) noise increases
285. Consider the following statements regarding Meesj yeÌ{lee nw
the pumped storage plants: (b) pressure increases
heche mšesjspe mebÙeb$e kesâ mecyevOe ceW efvecve keâLeveeW hej oeye yeÌ{lee nw
efJeÛeej keâjW– (c) noise increases, pressure increases, velocity
decreases
1. A pumped storage plant is a peak load
plant heche mšesjspe mebÙeb$e heerkeâ Yeej mebÙeb$e neslee nw~ Meesj yeÌ{lee, oeye yeÌ{lee, Jesie keâce neslee nw
(d) none of the above
2. The starting time of a pumped storage
Ghejeskeäle keâesF& veneR
plant is very long
290. The power output from an hydroelectric plants
heche mšesjspe mebÙeb$e keâe mšeefšËie meceÙe yengle pÙeeoe depend on
neslee nw~ Skeâ neF[^esFuesefkeäš^keâ mebÙeb$e keâe DeeGšhegš Meefkeäle hej
3. Reversible turbines and pumps are very efveYe&j keâjlee nw–
suitable for pumped storage plants (a) type of turbine, type of dam and type of
ØeefleJeleea šjyeeFve Deewj heche, heche mšesjspe mebÙeb$e kesâ catchment area
efueS yengle Devegketâue neslee nw~ šjyeeFve kesâ Øekeâej, yeeBOe kesâ Øekeâej, kewâÛecesvš #es$ehej
4. Pumped storage plants can be used for (b) type of dam, head, system efficiency
load frequency control yeeBOe keâe Øekeâej, ns[, efmemšce o#elee
Electrical 50000 (MCQ) Volume II 434 YCT
(c) type of dam, type of catchment area and 296. Which of the following will take least time in
discharge starting form cold condition to full load
yeeBOe keâe Øekeâej, kewâÛeceWš #es$e kesâ Øekeâej, Deewj ef[mÛeepe& operation?
(d) discharge, system efficiency efvecve ceW mes keâewve mee "b[ keâer efmLeefle mes hetCe& Yeej
ef[meÛeepe&, efmemšce o#elee Dee@hejsMeve kesâ efueS keâce mes keâce meceÙe uesiee?
291. Which of the following power plants will take (a) Gas turbine plant/iewme šjyeeFve mebÙeb$e
long period in erection and installation? (b) Nuclear power plant/veeefYekeâerÙe Meefòeâ mebÙeb$e
efvecve ceW mes keâewve Meefòeâ mebÙeb$e efvecee&Ce Deewj mebmLeeheve ceW (c) Hydro electric power plant
DeefOekeâ meceÙe uesiee? neF[^es Fuesefkeäš^keâ Meefòeâ mebÙeb$e
(a) Steam/Jee<he (d) Thermal power plant/Lece&ue Meefòeâ mebÙeb$e
297. Which of following power plants will take long
(b) Hydro/neF[^es
period in erection and installation?
(c) Nuclear/veeefYekeâerÙe efvecveefueefKele ceW mes keâewve-mee Meefòeâ mebÙeb$e efvecee&Ce Deewj
(d) Gas-turbine/iewme šjyeeFve mLeehevee ceW uebyeer DeJeefOe uesiee ?
292. Which of the following power plants normally (a) Gas turbine/iewme šjyeeFve
operates at high speeds ? (b) Thermal/Lece&ue
efvecve ceW mes keâewve mee Meefòeâ mebÙeb$e meeceevÙele: GÛÛe (c) Hydro/neF[^es
ieefleÙeeW hej ØeÛeeefuele neslee nw? (d) Nuclear/veeefYekeâerÙe
(a) Hydroelectric/peue efJeÅegle 298. Which of following power plants is free from
(b) Steam-turbine/Yeehe šjyeeFve environmental problem?
efvecveefueefKele ceW mes keâewve mee Meefòeâ mebÙeb$e heÙee&JejCeerÙe
(c) Petrol engine/hesš^esue Fbpeve
mecemÙee mes cegkeäle nw –
(d) Diesel engine/[erpeue Fbpeve (a) Steam/Yeehe
293. Which of the following power plants is free (b) Hydroelectric/neF[^esFuesekf eäš^keâ
from environment problems? (c) Nuclear/vÙetefkeäueÙej
efvecve ceW mes keâewve mee Meefòeâ mebÙeb$e JeeleeJejCeerÙe (d) Diesel engine/[erpeue Fbpeve
mecemÙeeDeeW mes cegòeâ neslee nw? 299. In kaplan runner, the number blades is usually
of the order of
(a) Diesel engine/[erpeue Fbpeve keâhueeve jvej ceW yues[ mebKÙee Deeceleewj hej ........ kesâ ›eâce
(b) Nuclear/veeefYekeâerÙe ceW nesles nQ~
(c) Hydroelectric/peueefJeÅegle (a) 1 - 2 (b) 3 - 6
(c) 16 - 24 (d) 12 - 16
(d) Steam/Yeehe
300. On what factors does the selection of a water
294. Which of the following plants will take least turbine depend?
time in starting _____ cold conditions to full- Skeâ peue šjyeeFve keâe ÛeÙeve efkeâve keâejkeâeW hej efveYe&j
load operation? keâjlee nw~
efvecve ceW mes keâewve mee Meefòeâ mebÙeb$e "b[ DeJemLee mes hetCe& (a) Working head/keâeÙe&keâejer Meer<e&
Yeej ØeÛeeueve DeJemLee lekeâ ØeejcYe nesves ceW meyemes keâce (b) Speed /ieefle
meceÙe uesiee? (c) Nature of load/Yeej keâer Øeke=âefle
(a) Nuclear power plant/veeefYekeâerÙe Meefòeâ mebÙeb$e (d) All of above/Ghejeskeäle meYeer
(b) Steam power plant/Yeehe Meefòeâ mebÙeb$e 301. Deflectors are provided in
(c) Hydroelectric plant/peue efJeÅegle mebÙeb$e ef[Heäueskeäšj Øeoeve keâjlee nw ..........
(a) Kaplan turbine/keâhueeve šjyeeFve
(d) Gas turbine plant/iewme šjyeeFve mebÙeb$e
(b) Propeller turbine/Øeeshesuej šjyeeFve
295. Which of the following generating plants has
the minimum operating cost? (c) Pelton wheel/hesušve £erue
efvecve ceW mes efkeâme Meefòeâ mebÙeb$e keâer ØeÛeeueve ueeiele efvecve (d) Francis turbine/øeâeefvmeme šjyeeFve
302. High speed turbine is
nesleer nw? GÛÛe ieefle šjyeeFve nw –
(a) Steam plant/Yeehe mebÙeb$e (a) Pelton wheel/hesušve £erue
(b) Hydroelectric plant/peue efJeÅegle mebÙeb$e (b) Kaplan/keâhueeve
(c) Nuclear plant/veeefYekeâerÙe mebÙeb$e (c) Francis/øeâeefvmeme
(d) Diesel plant/[erpeue mebÙeb$e (d) None of above/Ghejeskeäle keâesF& Yeer veneR
Electrical 50000 (MCQ) Volume II 435 YCT
3
303. The capacity of small hydro power plants are 308. Taking the density of water to be 1,000 kg/m ,
in order of how much power would be developed by a
Úesšs peue Meefkeäle mebÙeb$e efkeâ #ecelee efkeâ ßesCeer ceW nesles hydroelectric generator unit, assuming 100%
nw– efficiency, with 1.0 m head and 1.0 m3/s
(a) 1 to 15 MW/1 mes 15 cesieeJeeš discharge ?
(b) 15 to 100 MW/15 mes 100 cesieeJeeš peue keâe IevelJe 1,000 kg/m3 uesles ngS, peue efJeÅegle
(c) 20 to 50 MW/20 mes 50 cesieeJeeš pevejsšj FkeâeF& Éeje efkeâleveer Meefòeâ efJekeâefmele nesieer?
(d) None of above/Ghejeskeäle keâesF& veneR peyeefkeâ 1.0 m Meer<e& Deewj 1.0 m3/s ef[mÛeepe& kesâ meeLe
304. The action in Kaplan turbine is of the o#elee 100% ceeveer peeleer nw–
keâhueeve šjyeeFve ceW keâeÙe& nw – (a) 2.90 kW (b) 4.45 kW
(a) low head axial flow type (c) 9.80 kW (d) 19.60 kW
efvecve Meer<e& De#eerÙe ØeJeen Øekeâej 309. One million cubic meters of water is stored in a
(b) inward flow impulse type reservoir feeding a water turbine. The density
DeeJekeâ ØeJeen DeeJesieer šjyeeFve of water is 993 kg/m3. If the centre of mass of
(c) outward flow reaction water is 50 meters above the turbine and the
yeenjer ØeJeen efjSkeäMeve losses are negligible, the energy produced by
(d) high head mixed flow type that volume of water is:
GÛÛe Meer<e& efcekeäme ØeJeen Øekeâej Skeâ peueeMeÙe pees peue šjyeeFve keâes heâer[ keâj jne nw ceW
305. India's first nuclear power plant was installed Skeâ efceefueÙeve keäÙetefyekeâ ceeršj peue pecee neslee nw~ peue
at: keâe IevelJe 993 kg/m3 nw~ Ùeefo peue kesâ õJÙeceeve keâe
Yeejle keâe henuee hejceeCeg Tpee& mebÙeb$e mLeeefhele efkeâÙee kesâvõ šjyeeFve mes 50 m Thej nw Deewj vegkeâmeeve veieCÙe nw
ieÙee Lee– lees peue kesâ Gme cee$ee mes GlheVe Tpee& nw?
(a) Tarapore/leejehegj (a) 135.3 MWhr. (b) 130 MWhr.
(b) Kota/keâesše (c) 120 MWhr. (d) 140 MWhr.
(c) Kalpakkam/keâuehekeäkeâce 310. If power P available from a hydro-scheme is
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR given by the formula P = 9.81 QH, where Q is
the flow rate through the turbine in l/s and H is
306. The power output from a hydroelectric power
the head in metres, then P will be in units of
plant depends on
peue efJeÅegle Meefòeâ mebÙeb$e ceW Meefòeâ DeeGšhegš efveYe&j Ùeefo neF[^es Ùeespevee mes GheueyOe Meefòeâ P, met$e P = 9.81
keâjleer nw– QH Éeje oer peeleer nw, peneB Q šjyeeFve mes ØeJeen oj l/s
(a) type of dam, type of catchment area and ceW nw, Deewj H ceeršj ceW Meer<e& nw lees P, .............. FkeâeF& ceW
discharge / yeeBOe kesâ Øekeâej, kewâÛeceWš #es$e kesâ Øekeâej nesieer?
Deewj ef[mÛeepe& hej (a) W (b) HP
(b) type of dam, head, and system efficiency (c) kJ/s (d) kWh
yeeBOe kesâ Øekeâej, Meer<e& Deewj ØeCeeueer keâer o#elee hej 311. If the discharge in 1m3/s and head of the water
(c) discharge, head and system efficiency is 1 m, then the power generated by the
ef[mÛeepe&, Meer<e& Deewj ØeCeeueer o#elee hej alternator in one hour (assume 100%)
(d) type of turbine, type of dam and type of efficiency of generator and turbine) will be
catchment area Ùeefo ef[mÛeepe& 1m3/s nes leLee peue keâe Meer<e& 1 m nes
šjyeeFve kesâ Øekeâej, yeebOe kesâ Øekeâej Deewj Deewj kewâÛescesvš leye Deušjvesšj Éeje 1 IeCšs ceW peefvele Meefòeâ nesieer–
#es$e kesâ Øekeâej hej (Deušjvesšj Deewj šjyeeFve keâer o#elee 100% ceeves)
307. What is the correct expression for the electrical
(a) 10 kW (b) 73 kW
power developed by a hydroelectric plant in 75
kW?
(c) 746 kW (d) 100 kW
peue efJeÅegle mebÙeb$e Éeje efJekeâefmele JewÅegle Meefòeâ (kW ceW) 75
kesâ efueS keâewve mener JÙebpekeâ nw? 312. The utilizable water from a catchment is 60 ×
106 cu m annually and the hydro-station has
(a) 0.736 wQHη (b) 75 wQHη
75 0.736 head of 40 m. Assuming ideal generator and
7 turbine, the power that can be theoretically
(c) 75 × 0.736 wQHη (d) wQHη
75 × 0.736 generated is
(a) Tailrace/šsuejsme
ØeÛeeueve Meer<e& efveÙebef$ele nes peeS
(c) pressure inside the turbine casing remains
(b) Turbine/šjyeeFve
constant
(c) Reservoir/peueeMeÙe
šjyeeFve kesâefmebie kesâ Devoj oeye efmLej yevee jns
(d) All of the above/GheÙeg&keäle meYeer (d) kinetic energy of the running water is fullly
354. An hydroelectric power station is supplied utilized
from a reservoir of capacity 3 × 107m3 at a head jefvebie peue keâer ieeflepe Tpee& hetCe& ™he mes GheÙeesie nes mekesâ
of 150 m. The overall efficiency of the power
358. Bulb turbines are
plant is 70%. Energy available from the plant
will be
yeuye šjyeeFveW nQ–
150 m Meer<e& hej 3 × 107 m3 #ecelee Jeeues peueeMeÙe mes (a) low head axial flow turbines
Skeâ peueefJeÅegle Meefòeâ kesâvõ keâes Deehetefle& efkeâÙee peelee nw~ efvecve Meer<e& De#eerÙe ØeJeen šjyeeFveW
Meefòeâ mebÙeb$e keâer mechetCe& #ecelee 70³ nw~ mebÙeb$e mes (b) high speed turbines/GÛÛe ieefle šjyeeFveW
GheueyOe Tpee& nesieer? (c) high head turbines /GÛÛe Meer<e& šjyeeFveW
(a) 12.2625 × 106 kWh (b) 8.58375 × 106 kWh (d) high pressure turbines/GÛÛe oeye šjyeeFveW
(c) 1.25 × 106 kWh (d) 0.875 × 106 kWh 359. Bulb turbines
355. In pumped storage scheme, the generator is yeuye šjyeeFveW
also used as (a) can be used at very low and widely varying
heche mšesjspe Ùeespevee ceW, pevejsšj keâe ØeÙeesie .............. heads
keâer lejn Yeer neslee nw– yengle efvecve Deewj pÙeeoe heefjJele&veerÙe Meer<e& hej ØeÙeesie keâer
(a) induction generator or synchronous condenser pee mekeâleer nw
Fb[keäMeve pevejsšj Ùee efmev›eâesveme keâb[svmej (b) are smaller, faster and easier to build than
(b) induction generator or synchronous motor other types and are cheaper in capital cost
Fb[keäMeve pevejsšj Ùee efmev›eâesveme ceesšj than other types and are cheaper in capital
cost that Kaplan turbines
(c) synchronous generator or induction generator
efmev›eâesveme pevejsšj Ùee Fb[keäMeve pevejsšj Úesšer nesleer nQ, lespe nesleer nw Deewj DevÙe Øekeâej keâer
(d) synchronous motor or synchronous condenser šjyeeFveeW keâer Dehes#ee yeveeves ceW Deemeeve nesleer nw leLee
efmev›eâesveme ceesšj Ùee efmev›eâesveme keâb[svmej keâheueeve šjyeeFve keâer Dehes#ee kegâue ueeiele ceW memleer nesleer
356. Pump storage schemes are used to improve nw
heche mšesjspe Ùeespevee keâes keäÙee megOeejves kesâ efueS GheÙeesie (c) are universally used for small hydro schemes
efkeâÙee peelee nw? Úesšs neF[^es ÙeespeveeDeeW kesâ efueS meeJe&Yeewefcekeâ ™he mes
(a) the power factor/Meefòeâ iegCekeâ
GheÙeesie keâer peeleer nw
(d) all of the above/Ghejesòeâ meYeer
(b) the diversity factor/efJeefJeOelee iegCekeâ
Electrical 50000 (MCQ) Volume II 441 YCT
360. In turbulent flow (a) 40m/40 ceeršj
DeMeeble ØeJeen ceW– (b) 120m/120 ceeršj
(a) cohesion is more effective than momentum (c) 180m or above/180 ceeršj Ùee Thej
transfer in causing shear stress
365. Running cost of a hydro-electric power plant
MeerÙej mš^sme hewoe keâjves ceW ceesceWšce š^ebmeheâj keâer leguevee ceW is:
meecebpemÙe DeefOekeâ ØeYeeJeer neslee nw neF[^es-Fuesefkeäš^keâ hee@Jej hueebš keâer jefvebie ueeiele nesleer
(b) shear stresses are usually larger than those in nw–
laminar flow
(a) Equal to running cost of a steam power
MeerÙej mš^smesme Deeceleewj hej uewefcevej ØeJeen keâer leguevee ceW plant/Jee<he Meefkeäle mebÙeb$e keâer jefvebie ueeiele kesâ yejeyej
yeÌ[s nesles nQ (b) Less than running cost of a steam power
(c) the fluid particles move in an orderly manner plant/Jee<he Meefkeäle mebÙeb$e keâer jefvebie ueeiele mes keâce
õJe kesâ keâCe Skeâ ›eâceyeæ lejerkesâ mes Ûeueles nQ (c) More than running cost of a steam power
(d) momentum transfer is on molecular scale plant/Jee<he Meefkeäle mebÙeb$e keâer jefvebie ueeiele mes DeefOekeâ
only
366. Francis turbine is usually used for:
ceesceWšce š^ebmeheâj kesâJeue DeeCeefJekeâ hewceeves hej neslee nw øeâebefmeme šjyeeFve kesâ efueS Deeceleewj hej GheÙeesie efkeâÙee
361. Rotameter is used for measuring
peelee nw–
jesšeceeršj keäÙee ceeheves kesâ efueS ØeÙeesie efkeâÙee peelee nw?
(a) High heads/GÛÛe Meer<eeX
(a) fluid discharge/õJe ef[mÛeepe&
(b) Medium heads/ceOÙece Meer<eeX
(b) fluid density/õJe IevelJe
(c) Low heads/efvecve Meer<eeX
(c) fluid viscosity/õJe MÙeevelee
367. In high head hydro power plant the velocity of
(d) all of the above/Ghejesòeâ meYeer water in penstock is about:
362. A hydraulic turbine having rated speed of 250 GÛÛe Meer<e& peue Meefòeâ mebÙeb$e ceW hesvemše@keâ ceW peue keâer
rpm is connected to a synchronous generator. ieefle ueieYeie nesleer nw–
In order to produce power at 50 Hz, the
(a) 1m/s (b) 4m/s
number of poles required in the generator are
(c) 7m/s (d) 12m/s
250 R.P.M. keâer jsšs[ neF[^esefuekeâ šjyeeFve Skeâ
368. Francis turbine is usually used for:
leguÙekeâeueer pevejsšj mes pegÌ[er nw~ 50 Hz hej efJeÅegle keâe
øeâebefmeme šjyeeFve............ kesâ efueS Deeceleewj hej GheÙeesie
Glheeove keâjves nsleg peefve$e ceW DeeJeMÙekeâ OeÇgJeeW keâer mebKÙee
efkeâÙee peelee nw~
nw?
(a) Low head installation upto 30m/30m lekeâ
(a) 6 (b) 12
efvecve Meer<e& keâer mLeeheve
(c) 16 (d) 24
(b) Medium head installation from 30 to
363. A Pelton wheel turbine having a rated speed of
300 rpm is connected to an alternator to 180m/30 mes 180m lekeâ ceOÙece Meer<e& keâer mLeeheve
produce power at 50 Hz. The number of poles (c) High head installation above 180m/180
required in the alternator is m mes Thej GÛÛe Meer<e& keâer mLeeheve
Skeâ hewušve Jnerue šjyeeFve efpemekeâer jsšs[ ieefle 300 (d) for all heads/meYeer Meer<eex kesâ efueS
R.P.M. nw, 50 Hz hej efJeÅegle keâe Glheeove keâjves kesâ 369. Francis, Kaplan and propeller turbines fall
efueS Skeâ ØelÙeeJele&keâ mes pegÌ[er nw~ ØelÙeeJele&keâ ceW under the category of:
DeeJeMÙekeâ OeÇgJeeW keâer mebKÙee nw? øeâebefmeme keâhuee@ve Deewj Øeeshesuej šjyeeFve ..............
(a) 4 (b) 8 kesâ ßesCeer kesâ Devleie&le Deeles nQ~
(c) 10 (d) 20 (a) Impulse turbine/DeeJesieer šjyeeFve
364. Pelton wheel turbine is used for mimum of the (b) Reaction turbine/Øeefleef›eâÙee šjyeeFve
following heads:
(c) Impulse reaction combined
hesušve Jnerue šjyeeFve keâe ØeÙeesie efvecveefueefKele Meer<eex kesâ
DeeJesieer Øeefleef›eâÙee šjyeeFve
efueS efkeâÙee peelee nw–
(d) Axial flow/De#eerÙe ØeJeen
Electrical 50000 (MCQ) Volume II 442 YCT
(a) These develop more power
3. veeefYekeâerÙe Meefòeâ mebÙeb$e Ùes DeefOekeâ Meefòeâ Glheeefole keâjles nQ
(Nuclear Power Plant) (b) Its technology is simple/Fmekeâer lekeâveerkeâ mejue nw
370. Which of the following power plants needs (c) Abundance of thorium deposits are available
highly skilled/qualified engineers for its in India/LeesefjÙece Yeb[ej keâer ØeÛegjlee Yeejle ceW GheueyOe nw
operation? (d) These can be easily designed
efvecveefueefKele Meefòeâ mebÙeb$eeW ceW efkeâmekesâ mebÛeeueve kesâ efueS Ùes Deemeeveer mes ef[peeFve efkeâÙes pee mekeâles nw
GÛÛe kegâMeue/efMeef#ele FbpeerefveÙejeW keâer DeeJeMÙekeâlee nesleer 376. The first nuclear power plant installed in India
nw? is
(a) Hydro/neF[^es Yeejle ceW henuee mLeeefhele veeefYekeâerÙe Meefòeâ mebÙeb$e nw?
(b) Steam/Yeehe (a) Kota (Rajasthan)/keâesše (jepemLeeve)
(c) Nuclear/veeefYekeâerÙe (b) Tarapur (Maharashtra)/leejehegj (ceneje°^)
(d) Gas turbine/iewme šjyeeFve (c) Kalpakkam (TN)/keâuehekeäkeâce (leefceuevee[g)
371. Which of the following plants has the (d) Norora (U.P.)/vejewje (Gòej ØeosMe)
maximum capital cost? 377. When a nuclear reactor is operting at constant
efvecveefueefKele ceW mes efkeâme mebÙeb$e ceW DeefOekeâlece kewâheeršue power the multiplication factor is:
(hetbpeer) neefve nesleer nw – peye Skeâ veeefYekeâerÙe efjSkeäšj efveÙele Meefòeâ hej ØeÛeeefuele
(a) Diesel plants/[erpeue mebÙeb$e nw, lees iegCekeâ hewâkeäšj neslee nw–
(b) Nuclear plants/veeefYekeâerÙe mebÙeb$e (a) Less than unity/FkeâeF& mes keâce
(c) Hydro-plants/neF[^es mebÙeb$e (b) Greater than unity/FkeâeF& mes DeefOekeâ
(d) Steam plants/Yeehe mebÙeb$e (c) Equal to unity/FkeâeF& kesâ yejeyej
372. Graphite is used in nuclear plant as a/an (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
veeefYekeâerÙe mebÙeb$e ceW Skeâ «esheâeFš keâe ØeÙeesie kesâ ™he ceW 378. Critical mass of fuel is the amount required to
keâjles nw~ make the multiplication factor……unity:
(a) fuel/F&Oeve FËOeve kesâ ef›eâefškeâue õJÙeceeve, iegCeve hewâkeäšj....... FkeâeF&
(b) electrode/Fueskeäš^es[ yeveeves kesâ efueS DeeJeMÙekeâ jeefMe nw–
(c) moderator/cevokeâ (a) Equal to/kesâ yejeyej
(d) coolant/kegâuesvš (Meerleuekeâ) (b) Less than/mes keâce
373. The Ist nuclear plant in world was
(c) More than/mes DeefOekeâ
commissioned in
efJeMJe ceW ØeLece veeefYekeâerÙe hueevš DeeÙeesie (keâceerMeve) (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
efkeâÙee ieÙee Lee 379. Consider the following moderators used in
(a) U.S.S.R./Ùet. Sme. Sme. Deej. nuclear reactors:
1. Graphite 2. Beryllium
(b) U.S.A/Ùet. Sme. S.
3. Heavy water
(c) UAE
(d) UK Their correct sequence in increasing order of
their neutron absorption cross section is
374. Nuclear fission means
veeefYekeâerÙe efJeKeC[ve keâe celeueye .............. efvecve cebokeâ veeefYekeâerÙe efjSkeäšj ceW ØeÙeesie efkeâS peeles nQ,
(a) breaking up of nuclear of heavy atoms into Fve hej efJeÛeej keâjW–
nearly equal parts 1. «esheâeFš 2. yesjerefueÙece
Yeejer hejceeCegDeeW kesâ veeefYekeâ keâes ueieYeie yejeyej YeeieeW ceW 3. Yeejer peue
šgšvee Gvekesâ vÙetš^e@ve DeJeMees<eCe ›eâe@me meskeäMeve kesâ yeÌ{les ›eâce ceW
(b) combination of two light nuclei
oes nukesâ veeefYekeâeW keâe mebÙeespeve Gvekeâe mener ›eâce nw–
(c) moderator/cevokeâ (a) 1, 3, 2 (b) 2, 1, 3
(d) graphite/«esheâeF[ (c) 3, 1, 2 (d) 3, 2, 1
375. Thorium Breeder Reactors are most suitable 380. Which material is used in controlling chain
for India because: reaction in a nuclear reactor?
LeesefjÙece yeÇer[j efjSkeäšme& Yeejle kesâ efueS meyemes GheÙegkeäle veeefYekeâerÙe Meefòeâ mebÙeb$e ceW keâewve mee heoeLe& efveÙebef$ele
neslee nw keäÙeeWefkeâ– ëe=bKeuee DeefYeef›eâÙee ceW ØeÙegòeâ neslee nw?
Electrical 50000 (MCQ) Volume II 443 YCT
(a) Thorium/LeesefjÙece (a) absorb the fast neutrons
(b) Heavy water/Yeejer peue lespe vÙetš^e@ve keâes DeJeMeesef<ele keâjvee
(c) Boron/yeesje@ve (b) protect the operating personnel from exposure
(d) beryllium/yesjerefueÙece to radiations
381. Control rods used in nuclear reactors are made
ØeÛeeueve keâefce&ÙeeW keâes efJeefkeâjCe kesâ DeveeJe=efòe mes yeÛeeves kesâ
of efueS
veeefYekeâerÙe efjSkeäšj ceW ØeÙegòeâ efveÙeb$ekeâ ÚÌ[W yeveer nesleer (c) prevent the reactor wall from getting heated
nQ– efjSkeäšj oerJeejeW keâes iece& nesves mes jeskeâves ceW
(a) zirconium/pekeâexefveÙece (b) boron/yeesje@ve (d) all of the above/Ghejesòeâ meYeer
(c) beryllium/yesjerefueÙece (d) lead/ues[ 388. The radiation shield for a nuclear power
reactor for biological safety is provided by
382. In a nuclear reactor, chain reaction is
having the reactor:
controlled by introducing
pewefJekeâ megj#ee nsleg efJeefkeâjCe Meeru[ Gme efjSkeäšj ceW
veeefYekeâerÙe efjSkeäšj ceW efkeâmekeâes ØeJesMe keâjeves mes ëe=bKeuee
GheueyOe keâjeF& peeleer nw, efpemeceW neslee nw–
DeefYeef›eâÙee efveÙebef$ele keâer pee mekeâleer nw?
(a) immersed in water pool
(a) iron rods/ueewn ÚÌÌ[W
peue kesâ kegbâ[ ceW [gyeeÙee ieÙee
(b) cadmium rods/kewâ[efceÙece je[
(b) encased by thick metal walls
(c) graphite rods/«esheâeFš ÚÌ[W ceesšer Oeeleg kesâ oerJeejeW mes efIeje ngDee
(d) brass rods/heerleue ÚÌ[W (c) encased by thick concrete wall
383. Heavy water is used in nuclear power plant as ceesšer kebâkeâjerš oerJeejeW mes efIeje ngDee
Yeejer peue keâe ØeÙeesie veeefYekeâerÙe efjSkeäšj ceW efkeâme lejn (d) isolated from outside word with strong
efkeâÙee peelee nw? magnetic fields
(a) fuel/FËOeve (b) coolant/Meerleuekeâ cepeyetle ÛegcyekeâerÙe #es$e kesâ meeLe yee¢e Je[& mes Deueie
(c) moderator/DeJecebokeâ 389. In boiler water reactor (BWR)
(d) both (b) and (c)/ (b) Deewj (c) oesveeW yee@Ùeuej peue efjSkeäšj (BWR) ceW–
384. Which of the following materials can be used as (a) the feed water acts both coolant and a
a coolant? moderator/YejCe peue Meerlekeâ Deewjcebokeâ oesveeW keâe
efvecve ceW mes keâewve mee heoeLe& Meerlekeâ kesâ ™he ceW ØeÙeesie keâeÙe& keâjlee nw
efkeâÙee pee mekeâlee nw? (b) enriched uranium is used as fuel
(a) Heavy water/Yeejer peue mece=æ ÙetjsefveÙece keâe ØeÙeesie FËOeve keâer lejn neslee nw
(b) CO2 (c) there is a danger of radioactive contamination
(c) helium/nerefueÙece of steam
(d) Any of the above/Ghejesòeâ ceW mes keâesF& Jee<he kesâ jsef[ÙeesSefkeäšJe mecheke&â ØeYeeJe keâe Keleje neslee nw
385. The function of reflector in a nuclear reactor is (d) all of the above/Ghejesòeâ meYeer
to 390. Tarapur atomic power station has
veeefYekeâerÙe efjSkeäšj ceW efjheäueskeäšj keâe keâeÙe& neslee nw– leejehegj hejceeCeg Meefòeâ mšsMeve ceW nw–
(a) bounce back most of the neutrons that escape
(a) CANDU type reactors/CANDU Øekeâej keâe
from the fuel core/FËOeve keâesj mes yeÛeves Jeeues
efjSkeäšj
DeefOekeâebMe vÙetš^e@ve keâes Jeeheme GÚeuevee
(b) boiling water reactors/yee@Ùeefuebie peue efjSkeäšj
(b) reduce the speed of the neutrons/vÙetš^e@ve keâer ieefle
(c) pressurised water reactors/oyeeJe peue efjSkeäšj
keâes keâce keâjvee
(d) gas cooled reactors/iewme Meerlekeâ efjSkeäšj
(c) stop the chain reaction/ëe=bKeuee DeefYeef›eâÙee keâes
jeskeâvee 391. The thermal efficiency of a boiler water reactor
is
(d) all of the above/Ghejesòeâ meYeer
yee@Ùeuej peue efjSkeäšj keâer leeheerÙe o#elee .........nesleer nw~
386. Reflectors of a nuclear reactor are made of
veeefYekeâerÙe efjSkeäšj keâe efjheäueskeäšj yevee neslee nw– (a) greater than/pÙeeoe
(a) cast iron/keâemš DeeÙejve (b) berylium/yesjerefueÙece (b) equal to/yejeyej
(c) steel/mšerue (d) boron/yeesje@ve (c) less than of a water reactor/oeefyele peue efjSkeäšj
387. Thermal shielding is provided to mes keâce
leeheerÙe Meerefu[bie efkeâmeefueS Øeoeve keâer peeleer nw? (d) None of the above/Fveces mes keâesF& veneRs
Electrical 50000 (MCQ) Volume II 444 YCT
392. In a pressurized water reactor (PWR) (b) Fission produces more neutrons than are
ØesmejeFp[ peue efjSkeäšj (PWR) ceW– absorbed/efJeKeC[ve DeJeMeesef<ele keâer leguevee ceW DeefOekeâ
(a) light or heavy water is used as both coolant vÙetš^e@veeW keâes Glheeefole keâjlee nw
and moderator/nukeâe Ùee Yeejer peue keâe ØeÙeesie (c) Fission produces less neutrons than are
Meerlekeâ Deewj cebokeâ oesveeW keâer lejn efkeâÙee peelee nw absorbed/efJeKeC[ve DeJeMeese<f ele keâer leguevee ceW keâce
(b) water is used at high pressure (as high as 140 vÙetš^e@veeW keâes Glheeefole keâjlee nw
kg/cm2) so that it is available in liquid form at
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
about 2800C/peue keâe GÛÛe oeye keâe GheÙeesie efkeâÙee
397. In nuclear chain fission reaction, each neutron
peelee nw (GÛÛe 140 kg/cm2) leeefkeâ Ùen ueieYeie
which causes fission produces:
2800C hej õJe ™he ceW GheueyOe jns
veeefYekeâerÙe ßeb=Keuee efJeKeC[ve Øeefleef›eâÙee ceW, ØelÙeskeâ
(c) the coolant water boils in the reactor core
Meerlekeâ peue efjSkeäšj keâesj ceW Gyeuelee nw vÙetš^e@ve keâewve mes keâejCe mes efJeKeC[ve keâe Glheeove keâjlee
(d) both (a) and (b)/(a) Deewj (b) oesveeW nw–
393. A CANDU reactor uses (a) No new neutron/....... veÙes vÙetš^e@ve vener
CANDU efjSkeäšj GheÙeesie keâjlee nw– (b) One new neutron/Skeâ veÙes vÙetš^e@ve
(a) highly enriched uranium as fuel and light (c) More than one new neutron/Skeâ mes DeefOekeâ veÙes
water as moderator and coolant/GÛÛe mece=æ vÙetš^e@ve
ÙetjsefveÙece FËOeve keâer lejn leLee nukeâe peue keâe cebokeâ Deewj (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
Meerlekeâ keâer lejn 398. Western U.P, Rajasthan, Punjab, Haryana,
(b) natural uranium as fuel and heavy water as Tamil Nadu are quite suitable areas for
moderator and coolant/Øeeke=âeflekeâ ÙetjsefveÙece FËOeve keâer
heef§eceer Gòej ØeosMe, jepemLeeve, hebpeeye, nefjÙeeCee,
lejn leLee Yeejer peue cebokeâ Deewj Meerlekeâ keâer lejn
leefceuevee[g efkeâmekesâ efueS yengle Devegketâue #es$e nw?
(c) enriched uranium as fuel and ordinary water
as moderator and cooler/ mece=æ ÙetjsefveÙece FËOeve (a) hydroelectric power plants / neF[^esFuesefkeäš^keâ
keâer lejn Deewj meeOeejCe peue cebokeâ Deewj Meerlekeâ (ketâuej) Meefòeâ mebÙeb$e
keâer lejn (b) steam power plants/Jee<he Meefòeâ mebÙeb$e
(d) only fertile material/kesâJeue GhepeeT heoeLe& (c) nuclear power plants/ veeefYekeâerÙe Meefòeâ mebÙeb$e
394. Which one of the following is employed as a (d) all of the above/Ghejesòeâ meYeer
moderator by CANDU type of slow thermal
399. One atomic mass unit (amu) is approximately
nuclear reactors?
equal to
efvecve ceW mes keâewve CANDU Øekeâej kesâ Oeerces Lece&ue
Skeâ Sše@efcekeâ ceeme FkeâeF& ueieYeie efkeâmekesâ leguÙe nw?
veeefYekeâerÙe efjSkeäšj ceW cebokeâ keâer lejn GheÙeesie efkeâÙee
(a) 1.66 × 10-24 kg (b) 1.66 × 10-27 kg
peelee nw?
(c) 1.6 × 10-19 kg (d) 1.6 × 10-13 kg
(a) Water/peue
400. The power development programmes that are
(b) Heavy water/Yeejer peue possible in Tamil Nadu are largely based on
(c) Graphite/«esheâeFš leefceuevee[g ceW pees Meefòeâ efJekeâeme keâeÙe&›eâce mecYeJe nw Jen
(d) beryllium/yesjerefueÙece yeÌ[s mlej hej efveYe&j keâjlee nw–
395. The nuclear energy is measured as: (a) steam power plants/Yeehe Meefòeâ mebÙeb$e
veeefYekeâerÙe Tpee& kesâ ™he ceW ceeheer peeleer nw–
(b) hydroelectric power plants/peue efJeÅegle Meefòeâ
(a) MeV/efceefueÙeve Fueskeäš^e@ve Jeesuš mebÙeb$e
(b) MW/cesiee Jee@š (c) nuclear power plants/veeefYekeâerÙe Meefòeâ mebÙeb$e
(c) Curie/keäÙetjer (d) diesel power plants/[erpeue Meefòeâ mebÙeb$e
(d) Farad/Hewâj[ 401. One atomic mass unit is equivalent to
396. Fission chain reaction is possible when: Skeâ hejceeCeg õJÙeceeve FkeâeF& (amu) ueieYeie leguÙe nw–
efJeKeC[ve ßeb=Keuee Øeefleef›eâÙee mecYeJe nw peye– (a) 931.4 MeV.
(a) Fission reduces the same number of neutrons (b) 251.2 MeV.
which are absorbed/efJeKeC[ve vÙetš^e@veeW keâer meceeve (c) 120.4 MeV.
mebKÙee keâes keâce keâjlee nw pees efkeâ DeJeMeesef<ele neslee nw (d) 400 MeV.
Electrical 50000 (MCQ) Volume II 445 YCT
402. One kilogram of natural uranium gives energy (c) one new neutron/Skeâ veÙee vÙetš^e@ve
equivalent to about (d) at least one new neutron/keâce mes keâce Skeâ veÙee
1 efkeâ«ee. Øeeke=âeflekeâ ÙetjsefveÙece efkeâmekesâ ueieYeie leguÙe vÙetš^e@ve
Tpee& osleer nw? 408. Which of the following is not a secondary
(a) 100 kg of coal/100 kg keâesÙeuee kesâ nuclear fuel?
(b) 1,000 kg of coal/1,000 kg keâesÙeuee kesâ efvecve ceW mes keâewve efÉleerÙekeâ veeefYekeâerÙe FËOeve veneR nw?
(c) 5,000 kg of coal/5,000 kg keâesÙeuee kesâ (a) Pu239
(d) 10,000 kg of coal/10,000 kg keâesÙeuee kesâ (b) U233
403. Generation of one watt needs about ______ (c) U 235
fissions per second (d) none of above/Ghejesòeâ ceW mes keâesF& veneR
1 Jeeš kesâ Glheeove ceW ueieYeie ................... efJeKeC[ve 409. Which of the following are the fertile
Øeefle meskesâC[ keâer DeeJeMÙekeâlee nesleer nw~ materials?
(a) 3.1 (b) 3.1 × 106 efvecve ceW mes keâewve GhepeeT heoeLe& nw?
(c) 3.1 × 107
(d) 3.1 × 1010 (a) U238 and Th232/U238 Deewj Th232
404. Particles having the same atomic numbers but (b) U235 and Th239/U235 Deewj Th239
different mass numbers are called the (c) U233 and Pu239/U233 Deewj Pu239
Jen keâCe efpevekeâe hejceeCeg ›eâceebkeâ meceeve nes uesefkeâve (d) U238 and Pu239/U238 Deewj Pu239
õJÙeceeve mebKÙee efYeVe–efYeVe nw lees Jen heoeLe& keânueelee 410. Which of the following are the fissile materials?
nw– efvecve ceW mes keâewve efJeKeC[ve ÙeesiÙe heoeLe& nw
(a) beta particles/yeerše keâCe (a) U238 and Th232/U238 Deewj Th232
(b) decayed particles/ve° ngDee keâCe (b) U235, U233 and Pu239/U235, U233 Deewj Pu239
(c) isotopes/DeeFmeesšeshme (c) U235 and Th239/U235 Deewj Th239
(d) neutrons/vÙetš^evme (d) None of the above/FveceW mes keâesF& veneR
405. In a nuclear reactor thermal energy is obtained 411. In the nuclear fission reactions, isotope of
from uranium used is
vÙetkeäueerÙej efjSkeäšj ceW leeheerÙe Tpee& keâneB mes Øeehle nesleer veeefYekeâerÙe efJeKeb[ve DeefYeef›eâÙee ceW, ÙetjsefveÙece keâe
nw? mecemLeeefvekeâ ................ GheÙeesie efkeâÙee peelee nw?
(a) fission of radioactive materials (a) U234 (b) U235
jsef[ÙeesSefkeäšJe heoeLe& kesâ efJeKeC[ve mes (c) U233 (d) U238
(b) fussion of radioactive materials 412. When a nuclear reactor is operating at
jsef[ÙeesSefkeäšJe heoeLe& kesâ mebueÙeve mes constant power the multiplication factor
(c) Burning of the fuel rods in oxygen peye Skeâ veeefYekeâerÙe efjSkeäšj efmLej Meefòeâ hej ØeÛeeefuele
FËOeve ÚÌ[ keâe Dee@keämeerpeve ceW peueves mes neslee nw lees iegCekeâ Hewâkeäšj ............... neslee nw~
406. Nuclear reactors usually employ (a) is equal to unity/FkeâeF& kesâ yejeyej
veeefYekeâerÙe efjSkeäšj Deeceleewj hej ØeÙegòeâ keâjlee nw– (b) is less than unity/FkeâeF& mes keâce
(a) fission/efJeKeC[ve (c) is greater than unity/FkeâeF& mes yeÌ[e
(b) fusion/mebueÙeve (d) may be any of the above/Ghejesòeâ ceW mess keâesF& Yeer nes
(c) both fission and fusion/mebueÙeve Deewj efJeKeC[ve mekeâlee nw
oesveeW 413. One fission of U235 releases energy of
U235 keâe Skeâ efJeKeC[ve efkeâlevee Tpee& efveÙegefòeâ keâjlee
(d) none of the above/Ghejesòeâ ceW mes keâesF& veneR
nw?
407. In nuclear chain fission reaction each neutron
(a) 335 MeV (b) 200 MeV
causing fission produces
(c) 430 MeV (d) 525 MeV
veeefYekeâerÙe ëe=bKeuee efJeKeC[ve DeefYeef›eâÙee ceW ØelÙeskeâ 414. The average thermal efficiency of a modern
vÙetš^e@ve pees efJeKeC[ve keâe keâejCe neslee nw, GlheVe keâjlee nuclear power plant is about:
nw– Skeâ DeeOegefvekeâ veeefYekeâerÙe Meefkeäle mebÙeb$e keâer Deewmele
(a) no new neutron/keâesF& veÙee vÙetš^e@ve veneR T<ceerÙe o#elee ueieYeie nesleer nw–
(b) less than one new neutron/Skeâ mes keâce veÙee (a) 30% (b) 40%
vÙetš^e@ve (c) 60% (d) 80%
(d) the specific fuel consumption of a diesel 468. In a diesel engine fuel is injected at a pressure
power plant decreases with the decrease in of
load/[erpeue Meefòeâ mebÙeb$e keâer efJeefMe° FËOeve Kehele Yeej [erpeue Fbpeve ceW FËOeve efkeâme oeye hej Fvpeskeäš efkeâÙee
ceW keâceer kesâ meeLe Iešleer nw peelee nw?
462. The diesel engines are available in sizes from (a) 20 – 25 kg/cm2 (b) 50 – 75 kg/cm2
[erpeue FËpeve efkeâme Deekeâej mes GheueyOe nw? (c) 90 – 130 kg/cm2 (d) 130 – 160 kg/cm2
(a) 0 – 5 kW 469. Maximum temperature developed in a diesel
(b) 5 – 50 kW engine cylinder is in the range of
(c) 75 – 3,750 kW [erpeue Fbpeve efmeueW[j ceW efJekeâefmele DeefOekeâlece leeheceeve
(d) above 10,000 kW/10,000 kW mes Thej keâer meercee nw?
463. The compression ratio in diesel engine may be (a) 2,000 – 2,5000C (b) 1,500 – 2,0000C
in the range of (c) 1,000 – 1,5000C (d) 800 – 1,0000C
[erpeue Fbpeve ceW oyeeJe Devegheele efkeâme hejeme ceW neslee nw? 470. In a diesel engine, the heat lost to the cooling
(a) 15 – 20 (b) 10 –15 water is about
(c) 5 – 10 (d) 3 – 5 [erpeue Fbpeve ceW ketâefuebie peue ceW T<cee neefve ueieYeie
464. Air standard efficiency of a diesel engine nesleer nw–
depends upon
(a) 50 % (b) 30 %
[erpeue Fbpeve keâer JeeÙeg ceevekeâ o#elee efkeâme hej efveYe&j
(c) 20 % (d) 15 %
keâjleer nw?
471. The highest proportion of total heat supplied to
(a) expansion ratio/efJemleej Devegheele a diesel engine goes to
(b) compression ratio/oyeeJe Devegheele [erpeue Fbpeve keâes Deehetefle& keâer peeves Jeeueer kegâue T<cee keâe
(c) fuel used/GheÙeesie efkeâÙee ieÙee FËOeve GÛÛelece Devegheele .................peelee nw–
(d) none of the above/Ghejesòeâ ceW mes keâesF& veneR (a) useful output/GheÙeesieer DeeGšhegš
465. In case of diesel engines, the thermal efficiency (b) heat lost to exhaust gases/efvekeâeme iewme ceW T<cee
is in the range of
[erpeue Fbpeve kesâ efmLeefle ceW leeheerÙe o#elee keâer hejeme nw? neefve
Electrical 50000 (MCQ) Volume II 453 YCT
(c) heat lost to cooling water/ketâefuebie peue ceW T<cee (a) cooling water/"C[s peue
neefve (b) exhaust gases/efvekeâeme iewmeeW
(d) heat lost to friction, windage and radiation (c) friction, windage and radiation losses
losses/Ie<e&Ce, JeeÙeg (windage) Deewj efJeefkeâjCe ceW Ie<e&Ce, JeeÙeg Deewj efJeefkeâjCe neefveÙeeW
T<cee neefve
(d) lubricating oil/mvesnkeâ lesue
472. Which of the following diesel engines have
477. Reciprocating motion of piston is converted
minimum air consumption per B.H.P.?
into rotary one by
efvecve ceW mes efkeâme [erpeue Fbpeve keâer Øeefle B.H.P. JeeÙeg
efhemšve keâer ØelÙeeieeceer ieefle keâes Ûe›eâerÙe ieefle ceW ........
Kehele vÙetvelece nw?
Éeje yeouee peelee nw~
(a) 2 stroke, air injection/2–mš^eskeâJeeÙeg FbpeskeäMeve
(a) crank shaft/›eQâkeâ Meeheäš
(b) 4 stroke, air injection/4–mš^eskeâ JeeÙeg FbpeskeäMeve
(b) connecting rod/keâvesefkeäšbie je[
(c) 4 stroke, mechanical injection
(c) gudgeon pin/heefnS kesâ Oegje efheve
4–mš^eskeâ Ùeebef$ekeâ FbpeskeäMeve
(d) gear box/ieerÙej yeekeäme
(d) All of the above almost equal air
consumption/Ghejesòeâ meYeer ueieYeie yejeyej JeeÙeg 478. A two stroke engine may be identified by
Kehele Jeeues 2–mš^eskeâ Fbpeve keâes ................ kesâ Éeje henÛeevee pee
473. Heating value of diesel oil is around mekeâlee nw–
[erpeue lesue keâe T<ceerÙe ceeve ueieYeie neslee nw– (a) cooling system/Meerleueve ØeCeeueer
(a) 4,000 kcals/kg (b) lubrication system/mvesnkeâ ØeCeeueer
(b) 10,000 kcals/kg (c) absence of valves/JeeuJe keâer DevegheefmLeefle
(c) 15,000 kcals/kg (d) any of the above/Ghejesòeâ ceW mes keâesF& Yeer
(d) 20,000 kcals/kg 479. The performance of engines of different
474. In a four stroke petrol engine during suction outputs, speeds and sizes can be compared on
stroke the basis of
4–mš^eskeâ hesš^esue Fbpeve ceW mekeäMeve mš^eskeâ kesâ oewjeve– efJeefYeVe efveie&leeW, ieefleÙeeW Deewj DeekeâejeW Jeeues FbpeveeW kesâ
(a) only petrol is sucked in ØeoMe&ve keâer leguevee.............. kesâ DeeOeej hej keâer pee
kesâJeue hesš^esue Ûetmee peelee nw mekeâleer nw~
(b) only air is sucked in/kesâJeue JeeÙeg Ûetmeer peeleer nw (a) specific fuel consumption/efJeefMe° FËOeve Kehele
(c) mixture of petrol and air is sucked in (b) cylinder volume/efmeefueb[j DeeÙeleve
hesš^esue Deewj JeeÙeg keâe efceßeCe Ûetmee peelee nw (c) compression ratio/oyeeJe Devegheele
(d) any combustible gas is sucked in (d) piston size/efhemšve Deekeâej
efkeâmeer onveMeerue iewme keâes Ûetmee (sucked in) peelee nw 480. The thermal efficiency of a diesel engine in
475. In a four stroke engine, the four operations comparison to that of a petrol engine is
(suction, compression, expansion and exhaust) hesš^esue Fbpeve keâer leguevee ceW [erpeue Fbpeve keâer leeheerÙe
are completed in _______ revolution(s) of
o#elee .......... nesleer nw~
crankshaft
Ûeej mš^eskeâ Fbpeve ceW, Ûeej ØeÛeeueveeW (ÛegmeeJe, oyeeJe, (a) lower/keâce
hewâueeJe Deewj efvekeâeme), ›ewâvkeâ Meeheäš kesâ efkeâleves Ûe›eâCe ceW (b) higher/pÙeeoe
hetje neslee nw? (c) the same/meceeve
(a) eight/Dee" (b) four/Ûeej (d) may be lower or higher
(c) two/oes (d) one/Skeâ keâce Ùee pÙeeoe nes mekeâlee nw
476. Most of the heat generated in IC engines goes 481. In a multicylinder engine, the firing order
to should be in particular sequence because it
IC Fbpeve ceW GlheVe nesves Jeeueer DeefOekeâebMe T<cee ceušer efmeueW[j Fbpeve ceW heâeÙeefjbie Dee[&j efJeMes<e ›eâce ceW
................... keâes Ûeuee peelee nw~ nesvee ÛeeefnS keäÙeeWefkeâ Ùen–
Electrical 50000 (MCQ) Volume II 454 YCT
(a) will operate ignition system smoothly (c) reduces the specific fuel consumption/efJeefMe°
pJeueve ØeCeeueer keâes megÛee® ™he mes mebÛeeefuele keâjsiee FËOeve Kehele keâce keâjlee nw
(b) will give smooth turning moment (d) both (a) and (b)/(a) Deewj (b) oesveeW
efveyee&Oe šefveËie ceesceWš osiee 487. In Diesel cycle:
(c) will provide the best performance of the [erpeue Ûe›eâ ceW–
engine (a) Compression ratio and expansion ratio are
Fbpeve keâe meyemes DeÛÚe heâjheâecexvme Øeoeve keâjsiee equal/keâcØesMeve Devegheele Deewj efJemleej Devegheele yejeyej
(d) all of the above/Ghejesòeâ meYeer neslee nw
(b) Compression ratio is greater than expansion
482. High output diesel engines are started by
ratio/keâcØesMeve Devegheele efJemleej Devegheele mes DeefOekeâ neslee
GÛÛe efveie&le Jeeues [erpeue Fbpeve ................ Éeje ØeejcYe
nw
efkeâS peeles nQ–
(c) Compression ratio is less than expression
(a) self starter/mJe DeejcYekeâ ratio/keâcØesMeve Devegheele efJemleej Devegheele mes keâce neslee nw
(b) compressed air/oeefyele JeeÙeg (d) Compression ratio = (expansion ratio)2/
(c) battery/yewš^er keâcØesMeve Devegheele = (efJemleej Devegheele)2
(d) cranking/›eQâefkebâie 488. Compression ratio of an I.C. engine is the ratio
of:
483. The temperature of cooling water leaving the
diesel engine should not exceed
Skeâ DeeF&.meer. Fbpeve keâe keâcØesMeve Devegheele .......... keâe
Devegheele neslee nw~
[erpeue Fbpeve keâes ÚesÌ[ves Jeeues Meerleue peue keâe leeheceeve
............. DeefOekeâ veneR nesvee ÛeeefnS~ total volume keâgue DeeÙeleve
(a) /
swept volume mJeshš DeeÙeleve
(a) 250C (b) 400C
(c) 700C (d) 850C total volume keâgue DeeÙeleve
(b) /
484. Air filter is used in clearance volume keäueerÙejsvme DeeÙeleve
JeeÙeg efheâušj keâe ØeÙeesie ................. ceW neslee nw~ (c) Either (a) or (b)/Ùee
lees (a) Ùee (b)
(a) steam power plants/Yeehe Meefòeâ mebÙeb$e (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
(b) nuclear power plants/veeefYekeâerÙe Meefòeâ mebÙeb$e 489. The mechanical efficency of a diesel engine is
defined as:
(c) hydropower plants/peue Meefòeâ mebÙeb$e
Skeâ [erpeue Fbpeve keâer Ùeebef$ekeâ o#elee kesâ ™he ceW
(d) diesel power plants/[erpeue Meefòeâ mebÙeb$e heefjYeeef<ele keâer ieÙeer nw
485. For supercharging of diesel engines, the air is B.H.P
supplied through (a)
I.H.P
[erpeue Fbpeve kesâ meghejÛeeefpeËie nsleg JeeÙeg ..........kesâ
I.H.P
ceeOÙece mes mehueeF& keâer peeleer nw~ (b)
B.H.P
(a) injector/Fbpeskeäšj (c) B.H.P×I.H.P
(b) reciprocating compressor/jsmeerØeeskesâefšbie keâcØesmej (B.H.P)2
(d)
(c) centrifugal blower/mesvš^erheäÙetieue
yueesDej I.H.P
(d) any of the abvoe/Ghejesòeâ ceW mes keâesF& Yeer 490. Total cost of a diesel power plant per kW of
installed capacity is less than that of steam
486. Supercharging of diesel engines
power plant by:
[erpeue Fbpeve keâer meghejÛeeefpeËie–
[erpeue Meefòeâ mebÙeb$e keâer Øeefle kW mLeeefhele #ecelee keâer
(a) supply pressurized air during suction/mekeäMeve kegâue ueeiele, Yeehe Meefòeâ mebÙeb$e keâer leguevee ceW ..............
kesâ oewjeve ØesmejeFp[ JeeÙeg mehueeF& keâjlee nw keâce nesleer nw~
(b) increases the power output of the engine/Fbpeve (a) 5 to 10% (b) 20 to 30%
kesâ heeJej DeeGšhegš keâes yeÌ{elee nw (c) 40 to 50% (d) 70 to 80%
Electrical 50000 (MCQ) Volume II 455 YCT
491. The ratio of piston stroke to bore of cylinder (a) Diesel engine/[erpeue Fbpeve
for internal combustion engines varies
(b) Petrol engine/hesš^esue Fbpeve
between:
(c) Gas engine/iewme Fbpeve
Deebleefjkeâ onve kesâ efueS efhemšve mš^eskeâ keâe efmeefueb[j yeesj
mes Devegheele kesâ yeerÛe ............... heefjJee|lele neslee nw~ (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
(a) 0.9 to 1.9 497. The two stroke cycle engine has:
(b) 0.5 to 0.8 oes mš^eskeâ Ûe›eâ Fbpeve kesâ heeme neslee nw–
(c) 0.3 to 0.6 (a) One suction valve and one exhaust valve
(d) 0.1 to 0.2 operated by one cam/Skeâ kewâce Éeje mebÛeeefuele, Skeâ
492. Most high speed diesel engines work on: mekeäMeve (Ûet<eCe) JeeuJe Deewj efvekeâeme JeeuJe
DeefOekeâebMe GÛÛe ieefle [erpeue Fbpeve.........hej keâeÙe& keâjlee (b) One suction valve and one exhaust valve
nw~ operated by two cams/Skeâ mekeäMeve JeeuJe Deewj oes
kewâce Éeje mebÛeeefuele Skeâ efvekeâeme JeeuJe
(a) Diesel cycle/[erpeue Ûe›eâ
(c) Only ports covered and uncovered by piston
(b) Carnot cycle/keâe@veexš Ûe›eâ to effect charging and ex-husting/ Ûeee\peie leLee
(c) Dual combustion cycle/oesnjer onve Ûe›eâ efvekeâeme ØeYeeJe kesâ efueÙes efhemšve Éeje kesâJeue keâJe[& Deewj
(d) Otto cycle/Dee@šes Ûe›eâ DevekeâJe[& heesš&
493. In case of diesel engine, the pressure at the end (d) None of the above/FveceW mes keâesF& veneR
of compression is in the range of: 498. For same output, same speed and same
[erpeue Fbpeve kesâ mecyevOe ceW keâcØesMeve kesâ Devle ceW oeye compression ratio the thermal efficiency of a
keâer jsvpe ceW nesleer nw– two stroke cycle petrol engine as compared to
2 that for four stroke cycle petrol engine is:
(a) 7 – 8 kg/cm
(b) 20 – 25 kg/cm 2 meceeve efveie&le, meceeve ieefle leLee meceeve keâcØesMeve Devegheele
(c) 35 – 40 kg/cm2 kesâ efueÙes Skeâ, oes mš^eskeâ Ûe›eâ hesš^esue Fbpeve keâer T<ceerÙe
(d) 50 – 60 kg/cm 2 o#elee Skeâ Ûeej mš^eskeâ Ûe›eâ hesš^eus e Fbpeve keâer leguevee ceW
494. In a four stroke cycle S.I. engine the camshaft nesleer nw–
runs: (a) More/DeefOekeâ
Skeâ Ûeej mš^eskeâ Ûe›eâ S.I. Fbpeve ceW kewâceMeeheäš Ûeuelee
(b) Less/keâce
nw–
(c) Same as long as compression ratio is
(a) At the same speed as crank shaft/›eQâkeâ Meeheäš kesâ same/keâcØesMeve Devegheele kesâ meceeve ner uecyeer nesleer nw
meceeve ieefle hej
(d) Same as long as output is same/efveie&le kesâ meceeve
(b) At half the speed of crank shaft/›eQâkeâ Mee@heäš keâer
uecyeer nesleer nw
DeeOeer ieefle hej
499. The ratio of brake power to indicated power of
(c) At twice the speed of crank shaft/›eQâkeâ Mee@Heäš an I.C. engine is called:
keâer oesiegveer ieefle hej
Skeâ I.C. Fbpeve keâe yeÇskeâ heeJej Deewj Fefv[kesâšs[ hee@Jej kesâ
(d) At any speed irrespective crank shaft speed/
Devegheele keâes keâne peelee nw–
›eQâkeâ Mee@heäš kesâ ieefle kesâ efvejhes#e efkeâmeer Yeer ieefle hej
495. The following is an S.I. engine: (a) Mechanical efficiency/Ùeebef$ekeâ o#elee
efoÙee ieÙee Skeâ S.I. Fbpeve nw– (b) Thermal efficiency/T<ceerÙe o#elee
(a) Diesel engine/[erpeue Fbpeve (c) Volumetric efficiency/DeeÙeleefvekeâ o#elee
(b) Petrol engine/hesš^esue Fbpeve (d) Relative efficiency/meehes#e o#elee
(c) Either (a) or (b)/Ùee lees (a) Ùee (b) 500. The specific fuel consumption of a diesel engine
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR as compared to that for petrol engines is:
496. The following is C.I. engine: hesš^esue Fbpeve keâer Dehes#ee [erpeue Fbpeve keâe efJeefMe<š FËOeve
efoÙee ieÙee C.I. Fbpeve nw– Kehele........... neslee nw~
Electrical 50000 (MCQ) Volume II 456 YCT
(a) Lower/keâce (c) Chemically correct fuel air ratio is
(b) Higher/GÛÛe needed/jemeeÙeefvekeâ ™he mes F&Oeve Deewj JeeÙeg kesâ mener
Devegheele keâer DeeJeMÙekeâlee heÌ[leer nw
(c) Same for same output/meceeve DeeGšhegš kesâ efueS
meceeve (d) Any fuel air ratio will do/F&Oeve Deewj JeeÙeg keâe
Devegheele efkeâmeer Yeer lejn nes
(d) None of the above/FveceW mes keâesF& veneR
506. Carburettor is used for:
501. The thermal efficiency of petrol engine as
compared to diesel engine is: keâeyeg&jsšj kesâ efueS GheÙeesie efkeâÙee peelee nw–
[erpeue Fbpeve keâer leguevee ceW hesš^esue Fbpeve keâer T<ceerÙe (a) S.I. engines/S.I. FbpeveeW(mheeke&â FefiveMeve FbpeveeW)
o#elee nesleer nw– (b) Gas engines/iewme FbpeveeW
(a) Lower/keâce (c) C.I. engines/C.I. FbpeveeW (keâcØesm[ FefiveMeve FbpeveeW)
(b) Higher/GÛÛe (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
(c) Same for same power output/meceeve DeeGšhegš 507. Fuel injector is used in:
Meefòeâ kesâ efueS meceeve FËOeve Fbpeskeäšj ............ ceW GheÙeesie nw~
(d) Same for same speed/meceeve ieefle kesâ efueS meceeve (a) S.I. engines/S.I. FbpeveeW
502. Compression ratio of petrol engines is in the (b) Gas engines/iewme FbpeveeW
range of:
(c) C.I. engines/C.I. FbpeveeW
hesš^esue FbpeveeW kesâ keâcØesMeve Devegheele keâer meercee nesleer nw–
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
(a) 2 to 3
508. Very high speed engines are generally:
(b) 7 to 10
yengle GÛÛe ieefle Jeeues Fbpeve meeceevÙele: nesles nw–
(c) 16 to 20
(a) Gas engines/iewme Fbpeve
(d) None of the above/FveceW mes keâesF& veneR
503. In case of S.I. engine, to have best thermal (b) S.I. engines/mheeke&â FefiveMeve Fbpeve
efficiency the fuel air mixture ratio should be: (c) C.I engines/keâcØesm[ FefiveMeve Fbpeve
S.I. Fbpeve kesâ oMee ceW, meJeexòece T<ceerÙe o#elee kesâ efueS (d) Steam engines/Jee<he Fbpeve
FËOeve Deewj JeeÙeg keâe efceßeCe keâe Devegheele nesvee ÛeeefnS– 509. In S.I. engine, to develop high voltage for spark
(a) Lean/ keâce plug:
(b) Rich/DeefOekeâ S.I. Fbpeve ceW, mheeke&â hueie kesâ efueS GÛÛe Jeesušspe
efJekeâefmele keâjves kesâ efueS
(c) May be lean or rich/keâce Ùee DeefOekeâ
(a) Battery is installed/yewšjer mLeeefhele nesleer nw
(d) Chemically correct/jemeeÙeefvekeâ mener
504. The fuel air ratio, for maximum power of S.I. (b) Distributor is installed/efJelejkeâ mLeeefhele efkeâÙee peelee
engine, should be: nw
S.I. Fbpeve keâer DeefOekeâlece Meefkeäle kesâ FËOeve Deewj JeeÙeg (c) Carburettor is installed/keâeyeg&jsšj mLeeefhele neslee nw
(d) Ingnition coil is installed/FefiveMeve keäJee@Ùeue
keâe Devegheele nesvee ÛeeefnS–
mLeeefhele neslee nw
(a) Lean/ keâce 510. In S.I. engine, to obtain required firing order:
(b) Rich/ DeefOekeâ S.I. Fbpeve ceW DeeJeMÙekeâ heâeÙeeEjie Dee[&j Øeehle keâjves kesâ
(c) May be lean or rich/ keâce Ùee DeefOekeâ nes mekeâlee nw ef ueS
(d) Chemically correct/jemeeÙeefvekeâ mener (a) Battery is installed/yewšjer mLeeefhele efkeâÙee peelee nw
505. In case of petrol engine, at starting: (b) Distributor is installed/efJelejkeâ mLeeefhele efkeâÙee peelee
nw
hesš^esue Fbpeve keâer oMee ceW ØeejcYe ceW–
(c) Carburettor is installed/keâeyeg&jsšj mLeeefhele efkeâÙee
(a) Rich fuel air ratio is needed/heÙee&hle cee$ee ceW FËOeve
peelee nw
Deewj JeeÙeg kesâ Devegheele keâer DeeJeMÙekeâlee heÌ[leer nw
(d) Ingnition coil is installed/FefiveMeve keäJee@Ùeue
(b) Weak fuel air ratio is needed/keâce FËOeve Deewj JeeÙeg mLeeefhele efkeâÙee peelee nw
kesâ Devegheele keâer DeJeMÙekeâlee heÌ[leer nw
Electrical 50000 (MCQ) Volume II 457 YCT
511. For petrol engine, the method of governing (b) Accelerates auto-ignition/mJe-ØepJeueve keâes lJeefjle
employed is: keâjlee nw
hesš^esue Fbpeve kesâ efueS keâeÙe&jle ieJeefveËie keâer efJeefOe nw– (c) Does not affect auto-ignition/Dee@šes FefiveMeve keâes
(a) Quantity governing/keäJeebefššer ieJeefveËie ØeYeeefJele veneR keâjlee nw
(b) Quality governing/keäJeeefuešer ieJee\veie (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
(c) Hit and miss governing/efnš Deewj efceme ieJee\veie 517. Normal heptane content in fuel for S.I. engines:
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR S.I. Fbpeve kesâ efueS FËOeve ceW meeceevÙe nshšsve heoeLe&
512. For diesel engines, the method of governing (a) Retards auto-ignation/mJe-ØepJeueve keâes keâce keâjlee
employed is: nw
[erpeue Fbpeve kesâ efueS, ieJee\veie keâeÙe&jle keâer efJeefOe nw– (b)Accelerates auto-ignition/mJe-ØepJeueve keâes
(a) Quantity governing/keäJeebefššer ieJeefveËie lJeefjle keâjlee nw
(b) Quality governing/keäJeeefuešer ieJee\veie (c) Does not affect auto-ignition/Dee@šes FefiveMeve keâes
(c) Hit and miss governing/efnš Deewj efceme ieJee\veie ØeYeeefJele veneR keâjlee nw
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR (d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
513. Voltage developed to strike spark in the spark 518. The knocking in S.I. engines increases with:
plug is in the range: S.I. FbpeveeW ceW KešKešenš ............... kesâ meeLe yeÌ{leer nw~
mheeke&â hueie ceW mheeke&â keâes mš^eFkeâ keâjves kesâ efueS (a) Increases in inlet air temperature/Fveuesš JeeÙeg
efJekeâefmele Jeesušlee keâe jWpe nw– leeheceeve ceW Je=efæ
(a) 6 to 10 volts/6 mes 10 Jeesušdme (b) Increases in compression ratio/keâcØesMeve Devegheele
(b) 1000 to 2000 volts/1000 mes 2000 Jeesušdme ceW Je=efæ
(c) 20000 to 25000 volts/20000 mes 25000 Jeesušdme (c) Increases in cooling water temperature
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR ketâefuebie peue leehe ceW Je=efæ
514. In a 4-cylinder petrol engine the standard (d) All of the above/Ghejeskeäle ceW mes meYeer
firing order is: 519. The knocking in S.I. engines gets reduced:
4-efmeefueb[j hesš^esue Fbpeve ceW ceevekeâ heâeÙeeEjie Dee[&j neslee S.I. FbpeveeW ceW KešKešenš keâce nes peelee nw–
nw– (a) By increasing the compression ratio/
(a) 1-2-3-4 (b) 1-4-2-3 keâcØesMeve Devegheele yeÌ{eves mes
(c) 1-3-2-4 (d) 1-3-4-2 (b) By retarding the spark advance
515. The torque developed by the engine is
DeefOekeâ mheeke&â keâes Iešekeâj
maximum:
(c) By increasing inlet air temperature
Fbpeve Éeje efJekeâefmele yeueeIetCe& DeefOekeâlece neslee nw–
ØeJesefMele leehe yeÌ{ekeâj
(a) At minimum speed of engine
(d) By increasing the cooling water
Fbpeve keâer vÙetvelece ieefle hej
temperature/ketâefuebie peue keâe leeheceeve yeÌ{ekeâj
(b) At maximum speed of engine
520. Increasing the compression ratio in S.I.
Fbpeve keâer DeefOekeâlece ieefle hej engines:
(c) At maximum volumetric efficiency speed of S.I. FbpeveeW ceW keâcØesMeve Devegheele yeÌ{ves mes–
engine/Fbpeve keâer DeefOekeâlece DeeÙeleefvekeâ o#elee ieefle hej
(a) Increases the tendency for knocking
(d) At maximum power speed of engine
KešKešenš kesâ efueS ØeJe=efòe yeÌ{leer nw
Fbpeve keâer DeefOekeâlece hee@Jej ieefle hej
(b) Decreases tendency for knocking
516. Iso-octane content in a fuel for S.I. engines:
KešKešenš kesâ efueS ØeJe=efòe Iešleer nw
S.I. Fbpeve kesâ efueS FËOeve ceW DeeFmees-Dee@keäšsve meece«eer–
(c) Does not affect knocking
(a) Retards auto-ignition
KešKešenš ØeYeeefJele vener neslee nw
mJe-ØepJeueve keâes keâce keâjlee nw
(d) None of the above/GheÙeg&keäle ceW mes keâesF& vener
Electrical 50000 (MCQ) Volume II 458 YCT
521. The knocking tendency in petrol engnines will 526. Thermal efficiency of a gas turbine plant as
increase when: compared to Diesel engine plant is:
hesš^esue FbpeveeW ceW KešKešenš keâer ØeJe=efòe yeÌ{sieer peye– [erpeue Fbpeve mebÙeb$e keâer leguevee ceW iewme šjyeeFve mebÙeb$e
(a) Speed is decreased/ieefle Iešleer nw keâer Lece&ue o#elee nesleer nw–
(b) Speed in increased/ieefle yeÌ{leer nw (a) Higher/GÛÛe
(c) Fuel-air ratio is made rich (b) Lower/efvecve
FËOeve Deewj JeeÙeg keâer Devegheele heÙee&hle cee$ee ceW nesleer nw (c) Same/meceeve
(d) Fuel-air ratio is made lean (d) May be higher or lower
FËOeve Deewj JeeÙeg keâe Devegheele keâce nesleer nw GÛÛe Ùee efvecve nes mekeâlee nw
522. The ignition quality of fuels for S.I. engines is 527. The temperature at which a lubricating oil will
determined by: give sufficient vapours to form a combustible
S.I. FbpeveeW kesâ efueS FËOeve keâer ØepJeueve iegCeJeòee mixture with air is called the
kesâ Éeje efveOee&efjle keâer peeleer nw~
............ efpeme leeheceeve hej Skeâ mvesnkeâ lesue JeeÙeg kesâ meeLe Skeâ
(a) Cetane number rating/meeršsve mebKÙee jsefšbie
onveMeerue efceßeCe yeveeves nsleg heÙee&hle Jee<he osiee,
keânueelee nw–
(b) Octane number rating/Dee@keäšsve mebKÙee jsefšbie
(a) flash point/ÛeeQOe efyevog
(c) Calorific value rating/kewâueesjerefheâkeâ ceeve jsefšbie
(b) pour point/heesj (yeeÌ{) efyevog
(d) Volatility of the fuel/Jeesueeefšefuešer FËOeve keâer
(c) fire point/pJeueve efyevog
523. Petrol commercially available in India for
Indian passenger cars has octane number in (d) combustion point/onve efyebog
the range: 528. Which of the following will be the lowest for a
YeejleerÙe Ùee$eer keâejeW kesâ efueS Yeejle ceW JeeefCeefpÙekeâ leewj lubricating oil?
hej GheueyOe hesš^esue keâer jsvpe ceW Dee@keäšsve mebKÙee oer ieF& mvesnkeâ lesue nsleg efvecve ceW mes keâewve meyemes vÙetvelece nesiee?
nw– (a) flash point/ÛeeQOe efyevog
(a) 40 to 50 (b) 60 to 70 (b) pour point/heesj (yeeÌ{) efyevog
(c) 80 to 85 (d) 95 to 100
(c) fire point/pJeueve efyevog
524. Octane number of the fuel used commercially
(d) combustion point/onve efyebog
for diesel engine in India is in the range:
Yeejle ceW [erpeue Fbpeve kesâ efueS JÙeeJemeeefÙekeâ ™he mes 529. Fire and flash points of oils are important from
the point of view of
GheÙeesie efkeâÙes ieÙes FËOeve Dee@keäšsve mebKÙee jsvpe ceW nesleer lesueeW keâe ØekeâeMe Deewj ÛeeQOe efyevog ............Âef°keâesCe mes
nw– cenòJehetCe& nw~
(a) 80 to 90 (b) 60 to 80 (a) heating value/nerefšbie ceeve
(c) 60 to 70 (d) 40 to 45 (b) viscosity/MÙeevelee
525. The knocking tendency in C.I. engines (c) ignition and storage hazards
increases with : pJeueve Deewj YeC[ejCe KelejeW
C.I. FbpeveeW ceW KešKešenš keâer ØeJe=efòe kesâ meeLe yeÌ{leer (d) tendency of freezing during winter
nw– meefo&ÙeeW kesâ oewjeve pece peeves keâer ØeJe=efòe
(a) Decrease of compression ratio 530. For larger output diesel electric power plants
the engines used are
keâcØesMeve Devegheele kesâ Iešves
yeÌ[s efveie&le [erpeue efJeÅegleerÙe Meefòeâ mebÙeb$eeW kesâ efueS
(b) Increase of compression ratio
.......... Fbpeve GheÙeesie nesles nQ~
keâcØesMeve Devegheele kesâ yeÌ{ves (a) horizontal type/#eweflepe Øee™heer
(c) Increasing the temperature of inlet air (b) vertical type, multicylinder and supercharged
Fveuesš JeeÙeg kesâ leeheceeve kesâ yeÌ{ves GOJee&Oej Øee®heer, ceušermeerefueC[j Deewj meghejÛeep[&
(d) Increasing cooling water temperature (c) air cooled/JeeÙeg Meerleefuele
ketâefuebie peue leeheceeve kesâ yeÌ{ves (d) low R.P.M./efvecve R.P.M.
(a) different/Deueie–Deueie
šjyeeFve Meefòeâ mebÙeb$e mes efvekeâeme iewmeeW keâe GheÙeesie Jee<he
yee@Ùeuej ceW onve JeeÙeg kesâ ™he ceW keâjkesâ
(b) equal/meceeve
(c) using gas from a supercharged boiler for
(c) not related to each other
expansion in gas turbine/iewme šjyeeFve ceW efJemleej
Skeâ–otmejs mes mebyebefOele veneR nw
kesâ efueS Skeâ meghejÛeepe& yee@Ùeuej mes iewme keâe GheÙeesie
(d) unpredictabel/DeØelÙeeefMele
keâjkesâ
582. In a closed cycle operation of gas turbines
iewme šjyeeFve kesâ Skeâ yebo Ûe›eâ ØeÛeeueve ceW ......... (d) any of the above/Ghejesòeâ ceW mes keâesF& Yeer
ANSWER
1. (b) 2. (c) 3. (b) 4. (a) 5. (c) 6. (b) 7. (c) 8. (c) 9. (c) 10. (b)
11. (a) 12. (a) 13. (a) 14. (d) 15. (d) 16. (d) 17. (a) 18. (a) 19. (b) 20. (a)
21. (d) 22. (d) 23. (a) 24. (c) 25. (b) 26. (c) 27. (a) 28. (b) 29. (c) 30. (c)
31. (d) 32. (a) 33. (c) 34. (c) 35. (b) 36. (b) 37. (a) 38. (b) 39. (b) 40. (b)
41. (a) 42. (c) 43. (c) 44. (c) 45. (a) 46. (a) 47. (b) 48. (a) 49. (d) 50. (b)
51. (b) 52. (b) 53. (b) 54. (d) 55. (b) 56. (d) 57. (c) 58. (c) 59. (d) 60. (a)
61. (b) 62. (b) 63. (d) 64. (c) 65. (c) 66. (c) 67. (b) 68. (c) 69. (a) 70. (b)
71. (b) 72. (c) 73. (b) 74. (b) 75. (d) 76. (a) 77. (c) 78. (d) 79. (b) 80. (a)
81. (b) 82. (b) 83. (d) 84. (c) 85. (b) 86. (d) 87. (c) 88. (c) 89. (b) 90. (d)
91. (c) 92. (c) 93. (d) 94. (b) 95. (c) 96. (a) 97. (b) 98. (c) 99. (a) 100. (c)
101. (b) 102. (a) 103. (b) 104. (c) 105. (a) 106. (c) 107. (a) 108. (c) 109. (a) 110. (b)
111. (b) 112. (d) 113. (d) 114. (c) 115. (d) 116. (b) 117. (c) 118. (a) 119. (c) 120. (d)
121. (b) 122. (c) 123. (a) 124. (c) 125. (c) 126. (c) 127. (b) 128. (d) 129. (a) 130. (b)
131. (d) 132. (c) 133. (a) 134. (b) 135. (c) 136. (c) 137. (d) 138. (d) 139. (d) 140. (b)
141. (c) 142. (a) 143. (c) 144. (a) 145. (b) 146. (c) 147. (a) 148. (b) 149. (c) 150. (b)
151. (c) 152. (a) 153. (b) 154. (c) 155. (a) 156. (d) 157. (d) 158. (c) 159. (a) 160. (c)
161. (d) 162. (b) 163. (b) 164. (d) 165. (a) 166. (b) 167. (c) 168. (a) 169. (b) 170. (c)
171. (a) 172. (b) 173. (d) 174. (d) 175. (c) 176. (a) 177. (d) 178. (b) 179. (d) 180. (d)
181. (c) 182. (c) 183. (a) 184. (d) 185. (d) 186. (d) 187. (b) 188. (d) 189. (d) 190. (d)
191. (b) 192. (b) 193. (b) 194. (b) 195. (d) 196. (c) 197. (b) 198. (d) 199. (d) 200. (a)
ceW ØeÙegòeâ mebOeeefj$e ............. kesâ efueS neslee nw~ (c) yellow/heeruee
(a) Protection against accidental power (d) greenish blue/nje veeruee
failure/Dee@keâefmcekeâ DemeHeâue Meefòeâ kesâ efJe™æ megj#ee kesâ 91. Which of the following bulbs operates on least
efueS power?
(b) controlling illumination level of the lamp/uewche
efvecve ceW mes keâewve-mee yeuye keâce mes keâce hee@Jej hej
kesâ Øeoerheve mlej kesâ efveÙeb$eCe kesâ efueS Ûeuelee nw?
(c) for regulating discharge voltage/jsieguesefšbie (a) GLS bulb/GLS yeuye
efJemepe&ve Jeesušlee kesâ efueS (b) Torch Bulb/še@Ûe& yeuye
(d) for improving the power factor of the (c) Neon bulb/efveÙee@ve yeuye
circuit/heefjheLe kesâ Meefòeâ iegCekeâ keâes megOeejves kesâ efueS (d) Night bulb/jeef$e yeuye
(a) temperature of the source/œeesle kesâ leeheceeve hej 99. The wavelength of 5,500 A will give light of
o
(b) wavelength of light rays/ØekeâeMe efkeâjCeeW keâer 5,500 A Jeeueer lejbieowOÙe& efkeâme jbie keâe ØekeâeMe osieer?
lejbieowOÙe& hej (a) green colour/nje jbie
(c) shape of the source/œeesle kesâ Deekeâej hej
(b) red/ueeue
(d) all of the above/Ghejesòeâ meYeer
(c) orange/veejbieer
93. Materials which reflect all wavelength in the
spectrum of light appear to be (d) yellow–green colour/heeruee–nje jbie
Jen heoeLe& pees meYeer lejbie owOÙe& keâes ØekeâeMe mheskeäš^ce ceW 100. Which of the following colour has wavelength
between blue and yellow?
hejeJeefle&le keâj oslee nw, Øeleerle neslee nw–
efvecve ceW mes efkeâme jbie keâer lejbieowOÙe& veeruee Deewj heeruee jbie
(a) opaque/DeheejoMeea
kesâ ceOÙe nesleer nw?
(b) transparent/heejoMeea
(a) violet/yeQieveer (b) orange/veejbieer
(c) black to white/keâeuee mes mehesâo
(d) green to red/nje mes ueeue (c) red/ueeue (d) green/nje
94. An object, which appears red to the eyes, 101. Candle power is
absorbs kewâC[ue Meefòeâ neslee nw–
Skeâ Jemleg pees DeeBKeeW keâes ueeue Øeleerle nesleer nw, (a) the luminous flux emitted by the source per
DeJeMeesef<ele keâjleer nw– unit solid angle./Øeefle FkeâeF& "esme keâesCe œeesle Éeje
(a) blue radiations/veerues efJeefkeâjCeeW keâes Glmeefpe&le pÙeesefle Heäuekeäme
(b) violet radiations/yeQieveer efJeefkeâjCeeW keâes (b) the light radiating capacity of a source in a
(c) green radiations/njer efJeefkeâjCeeW keâes given direction/Skeâ oer ieF& efoMee ceW Skeâ œeesle keâer
(d) all of the above/Ghejesòeâ meYeer ØekeâeMe efJeefkeâjCe #ecelee
95. The sensors in the eye are known as (c) the unit of illumination/Øeoerheve keâer FkeâeF&
DeeBKeeW ceW mes pees mesvmej neslee nw Gmes peevee peelee nw– 102. Glare is caused due to
(a) retina and antenna/jsefšvee Deewj Sefvšvee ÛekeâeÛeeQOe efkeâmekesâ keâejCe neslee nw?
(b) wires and nerves/leej Deewj lebef$ekeâe (a) excessive luminance/DelÙeefOekeâ Ûecekeâ
(c) rodes and cones/je@[ Deewj keâesve (b) excessive lighting contrast in the field of
(d) none of the above/Ghejesòeâ ceW mes keâesF& veneR vision/Âef° kesâ #es$e ceW DelÙeefOekeâ ØekeâeefMekeâ keâvš^emš
96. The colour temperature of daylight is about (c) either (a) or (b)/Ùee lees (a) Ùee lees (b)
efove kesâ ØekeâeMe keâer jbie keâe leeheceeve ueieYeie neslee nw– (d) None of the above/FveceW mes keâesF& veneR
(a) 100 K (b) 200 K 103. A perfect diffuser surface in one that
(c) 500 K (d) 6000 K Skeâ heefjhetCe& efJemleejkeâ melen Jen nesleer nw pees–
97. Sky appears blue due to (a) transmits all the incident light/meYeer Deeheeflele
DeekeâeMe efkeâmekesâ keâejCe veeruee Øeleerle neslee nw? ØekeâeMe keâes os oslee nw
(a) radiation/efJeefkeâjCe (b) absorbs all the incident light/meYeer Deeheeflele ØekeâeMe
(b) reflection/hejeJele&ve keâes DeJeMeesef<ele keâjlee nw
(c) refraction/DeheJele&ve (c) diffuses all the incident light/meYeer Deeheeflele
(d) scattering of light over dust particles/Oetue keâCeeW ØekeâeMe keâes hewâueelee nw
hej ØekeâeMe keâe ØekeâerCe&ve (d) all of the above/Ghejesòeâ meYeer
98. Colour of light depends upon
104. The purpose of coating the fluorescent tube
ØekeâeMe keâe jbie efveYe&j keâjlee nw? from inside with white powder is
(a) velocity of light/ØekeâeMe kesâ Jesie HeäueesjesmeWš šÙetye kesâ Devoj meHesâo heeG[j mes keâesefšbie keâe
(b) frequency/DeeJe=efòe GösMÙe neslee nw–
Electrical 50000 (MCQ) Volume II 485 YCT
(a) to improve it life/ueeFheâ keâes yesnlej yeveevee (a) Sodium vapour lamp/meesef[Ùece Jee<he uewche
(b) to improve the appearance/GheefmLeefle ceW megOeej (b) Mercury vapour lamp/ceke&âjer Jee<he uewche
keâjvee (c) Incandescent lamp/leeheoerhle uewche
(c) to change the colour of light emitted to (d) Fluorescent lamp/Øeefleoerhle uewche
white/mehesâo jbie kesâ Glmeefpe&le ØekeâeMe keâe jbie yeoueves 110. The function of capacitor across the supply to
kesâ efueS the fluorescent tube is primarily to
(d) to increase the light radiations due to heäueesjesmesvš šdÙetye ceW mehueeF& kesâ S›eâeme mebOeeefj$e keâe
secondary emissions/efÉleerÙekeâ Glmepe&ve kesâ keâejCe keâeÙe& cegKÙe ™he mes neslee nw
ØekeâeMe efJeefkeâjCe yeÌ{eves kesâ efueS (a) stablize the arc/Deeke&â keâes efmLej yeveevee
105. Due to moonlight, illumination is nearly (b) reduce the starting current/ØeejefcYekeâ Oeeje keâes keâce
Ûevõ ØekeâeMe kesâ keâejCe, Øeoerheve ueieYeie neslee nw– keâjvee
(a) 3000 lumens/m2/uÙetcesve/ceer2 (c) improve the supply power factor/Deehetefle& Meefòeâ
(b) 300 lumnes/m2/uÙetcesve/ceer2 iegCekeâ keâes megOeejvee
(c) 30 lumens/m2/uÙetcesve/ceer2 (d) reduce the noise/Meesj keâes keâce keâjvee
(d) 0.3 lumen/m2/uÙetcesve/ceer2 111. ..... does not have separate choke
106. Which of the following instruments is used for ......ceW Deueie mes Ûeeskeâ veneR neslee nw~
the comparison of candle powers of different
(a) Sodium vapour lamp/meesef[Ùece Jee<he uewche
sources?
efvecveefueefKele ceW mes keâewve mee GhekeâjCe efYeVe-efYeVe Œeesle (b) Fluorescent lamp/heäueesjesmesvš uewche
kesâ kewâC[ue MeefòeâÙeeW keâer leguevee kesâ efueS GheÙeesie efkeâÙee (c) Mercury vapour lamp/ceke&âjer Jee<he uewche
peelee nw– (d) All of the above/Ghejeskeäle ceW mes meYeer
112. In sodium vapour lamp the function of the leak
(a) Radiometer/jsef[Ùeesceeršj
Transformer is
(b) Bunsen meter/yevmeve ceeršj
meesef[Ùece Jee<he uewche ceW efjmeeJe š^ebmeHeâece&j keâe keâeÙe&
(c) Photometer/heâesšes ceeršj neslee nw–
(d) Candle meter/kewâv[ue ceeršj
(a) To stabilize the arc/Deeke&â keâes efmLej keâjvee
107. ..... photometer is used for comparing the
(b) to reduce the supply voltage /mehueeF& Jeesušspe keâes
lights of different colours.
......heâesšesceeršj keâe ØeÙeesie efJeefYevve jbieeW kesâ ØekeâeMeeW keâer keâce keâjvee
leguevee keâjves kesâ efueS efkeâÙee peelee nw~ (c) both (a) and (b)/ (a) Deewj (b) oesveeW
(a) Grease spot/«eerpe mhee@š (d) none of the above/Ghejeskeäle ceW mes keâesF& veneR
(b) Bunsen/yevmeve 113. Most affected parameter of filament lamp due
(c) Lummer brodhun/uetcej yeÇesOeve to voltage change is
(d) Guilds flicker/efieu[dme efheäuekeâj Jeesušspe heefjJele&ve kesâ keâejCe efheâueecesvš uewche keâe meyemes
108. In the fluorescent tube circuit the function of DeefOekeâ ØeYeeefJele nesves Jeeuee hewjeceeršj nw–
choke is primarily to
heäueesjesmesvš šdÙetye heefjheLe ceW Ûeeskeâ keâe keâeÙe& cegKÙe ™he (a) wattage/Jee@š
mes neslee nw– (b) life/ueeFheâ
(a) reduce the flicker/efheäuekeâj keâes keâce keâjvee (c) luminous efficiency/uÙetefceveme o#elee
(b) minimise the staring surge/mšeefšËie mepe& keâes keâce (d) light output/ØekeâeMe DeeGšhegš
keâjvee 114. In electric discharge lamps for stabilizing the
(c) initiate the arc and stablizes it/Deeke&â mše&š keâjvee arc
leLee Fmekeâes yeveeS jKevee Deeke&â keâes efmLej keâjves kesâ efueS JewÅegle efJemepe&ve uewche ceW
(d) reduce the starting current/mšeefšËie Oeeje keâes keâce (a) a reactive choke is connected in series with
keâjvee the supply/Skeâ efjSefkeäšJe Ûeeskeâ mehueeF& kesâ meeLe ßesCeer
109. ...can not sustain much voltage fluctuations. ceW pegÌ[e neslee nw
.......yengle DeefOekeâ Jeesušspe Gleej-ÛeÌ{eJe menve veneR keâj (b) a condenser is connected in series to the
mekeâlee~ supply/Skeâ kebâ[svmej mehueeF& kesâ ßesCeer ceW pegÌ[e neslee nw
Electrical 50000 (MCQ) Volume II 486 YCT
(c) a condenser is connected in parallel/Skeâ (a) both dc as well as ac/[er.meer. Deewj S.meer. oesveeW hej
kebâ[svmej meceeveevlej ceW pegÌ[e neslee nw (b) ac only/kesâJeue S.meer. hej
(d) a variable resistor is connected in the (c) dc only/kesâJeue [er.meer. hej
circuit/Skeâ heefjJele&veerÙe ØeeflejesOe heefjheLe ceW pegÌ[e neslee (d) satisfactorily only on dc/kesâJeue [er.meer. hej
nw meblees<epevekeâ ™he mes
115. The electrodes of neon tube work at 121. Radio–interference from a fluorescent tube can
efveÙee@ve šŸetye keâe Fueskeäš^es[ .................. hej keâeÙe& be reduced by
keâjlee nw~ Skeâ Øeefleoerefhle šŸetye mes jsef[Ùees nmle#eshe keâes efkeâmekesâ
(a) very low temperatures/yengle efvecve leehe Éeje keâce efkeâÙee pee mekeâlee nw?
(b) ordinary voltage/meeOeejCe Jeesušspe (a) eliminating choke/Ûeeskeâ keâes nšekeâj
(c) 2 kV to 6 kV (b) connecting a small capacitor across starter
(d) 33 kV terminals/ØeJele&keâ efmeje kesâ HeeMJe& ceW Skeâ Úesše
116. Neon tubes are widely used for mebOeeefj$e mebÙeesefpele keâjkesâ
efveÙee@ve šŸetye JÙeehekeâ mlej hej ............... kesâ efueS (c) putting two tubes in parallel/oes šŸetye meceeblej ceW
GheÙeesie keâer peeleer nw~ jKekeâj
(a) advertising/efJe%eeheveeW (d) any of the above/Ghejesòeâ ceW mes keâesF& Yeer
(b) indoor lighting/Deevleefjkeâ ØekeâeMe JÙeJemLee 122. Blinking of a fluorescent tube may be on
(c) road signaling/jes[ mebkesâleve account of
(d) airport lighting/SÙejheesš& ØekeâeMe JÙeJemLee Øeefleoerefhle šŸetye keâer efšceefšceevee efkeâmekesâ keâejCe mes nes
117. The vapour discharge tube used for domestic mekeâlee nw?
light has (a) low circuit voltage/efvecve heefjheLe Jeesušlee
Iejsuet ØekeâeMe nsleg ØeÙegòeâ Jee<he efJemepe&ve šŸetye ceW neslee (b) loose contact/{eruee mecheke&â
nw– (c) defective starter/DeØeYeeefJele ØeJele&keâ
(a) one filament/Skeâ levleg (d) any of the above/Ghejesòeâ ceW mes keâesF& Yeer
(b) two filament/oes levleg 123. The life of fluorescent tube is affected by
(c) four filament/Ûeej levleg Øeefleoerefhle šŸetye keâe peerJevekeâeue efkeâmemes ØeYeeefJele neslee
(d) no filament/levleg vener nw?
118. A stabilizing choke is connected in the (a) low voltage/efvecve Jeesušspe
fluorescent tube circuit so as to (b) high voltage/GÛÛe Jeesušspe
Skeâ mLeeefÙelJe Ûeeskeâ Øeefleoerefhle šŸetye heefjheLe ceW (c) frequency of switching and blinking/efmJeefÛebie
efkeâmeefueS mebÙeesefpele efkeâÙee peelee nw? Deewj efšceefšceevee keâer DeeJe=efòe
(a) reduce the flicker/efPeueefceueenš keâce keâjves nsleg (d) all of the above/Ghejesòeâ meYeer
(b) act as a ballast in operating conditions and 124. The disadvantage(s) of fluorescent tube in
provide a voltage impulse for starting comparison to filament lamps is/are
heefjÛeeueve keâer efmLeefle ceW mebÛeeuekeâ keâer lejn keâeÙe& keâjves levleg uewche keâer leguevee ceW Øeefleoerefhle šŸetye keâer keâefceÙeeB nQ?
Deewj Meg™ keâjves kesâ efueS Skeâ Jeesušspe DeeJesie Øeoeve
(a) high cost/GÛÛe ueeiele
keâjves nsleg
(b) noise in choke/Ûeeskeâ ceW Meesj
(c) act as a starter/ØeJe&lekeâ keâer lejn keâeÙe& keâjves nsleg
(c) stroboscopic effect/mš^esyeesmkeâesefhekeâ ØeYeeJe
(d) avoid radio–interference/jsef[Ùees nmle#eshe keâes otj
(d) all of the above/Ghejesòeâ meYeer
keâjves nsleg
119. Standard wattage of a 1 m fluorescent tube is 125. The ratio of radiant heat produced by a
1 m Øeefleoerefhle šŸetye keâe ceevekeâ Jeešspe neslee nw– fluorescent tube and that by a filament lamp of
the same rating is
(a) 25 W (b) 65 W
(c) 80 W (d) 100 W meceeve efveOee&jCe kesâ Øeefleoerefhle šŸetye Deewj levleg uewche Éeje
120. A fluorescent tube can be operated on Glheeefole efJeefkeâjCe T<cee keâe Devegheele neslee nw?
Skeâ Øeefleoerefhle šŸetye efkeâme hej ØeÛeeefuele keâer pee mekeâleer (a) 0.2 (b) 0.35
nw? (c) 0.6 (d) 0.75
Electrical 50000 (MCQ) Volume II 487 YCT
126. The lamp that gives nearly ultraviolet light is (a) cold cathode lamp/"b[e kewâLees[ uewche
Jen uewche pees ueieYeie hejeyeQieveer ØekeâeMe oslee nw– (b) fluorescent lamp/Øeefleoerehf le uewche
(a) carbon arc lamp/keâeye&ve Deeke&â uewche (c) GLS lamp/GLS uewche
(b) vacuum type filament lamp/efveJee&led Øekeâej levleg (d) all of the above/Ghejesòeâ meYeer
uewche 133. Floodlighting is not used for
(c) argon gas filled filament lamp/Dee@ie&ve iewme Yeefjle DeehueJeØekeâeefMekeâ efkeâmekesâ efueS ØeÙegòeâ veneR nesleer nw?
levleg uewche (a) industrial purposes/DeewÅeeseif ekeâ GösMÙeeW
(d) all of the above/Ghejesòeâ meYeer (b) advertising purposes/efJe%eeheve GösMÙeeW
127. For the same wattage the cheapest lamp is (c) aesthetic purposes/meewvoÙe& GösMÙeeW
meceeve Jeešspe kesâ efueS meyemes memlee uewche nw– (d) any of the above/Ghejesòeâ ceW mes keâesF& Yeer
(a) sodium vapour lamp/meesef[Ùece Jee<he uewche 134. The lumens emitted from a 100 W incandescent
(b) GLS lamp/GLS uewche lamp will not increase if
(c) halogen lamp/nwueespeve uewche Skeâ 100 Jeeš kesâ Göerhle uewche mes Glmeefpe&le uÙetcesve veneR
(d) fluorescent tube/Øeefleoerefhle šŸetye yeÌ{siee Ùeefo–
128. Power factor is highest in case of (a) supply voltage is increased/Deehetefle&& Jeesušspe yeÌ{eÙee
efkeâme ceeceues ceW Meefòeâ iegCekeâ GÛÛelece neslee nw? peelee nw
(a) sodium vapour lamp/meesef[Ùece Jee<he uewche (b) filament temperature is increased/levleg leeheceeve
(b) mercury lamp/ceke&âjer uewche yeÌ{eÙee peelee nw
(c) incandescent lamp/Göerhle uewche (c) the diameter of the glass shell is
increased/keâeBÛe Keesue keâe JÙeeme yeÌ{eÙee peelee nw
(d) neon lamp/efveÙee@ve uewche
129. For the same wattage the lamp that will (d) any of the above/Ghejesòeâ ceW mes keâesF& Yeer
produce minimum radiant heat is 135. Total flux required in any lighting scheme
meceeve Jeešspe kesâ efueS Jen uewche pees vÙetvelece efJeefkeâjCe depends inversely on
T<cee GlheVe keâjlee nw– efkeâmeer ØekeâeMe Ùeespevee kesâ efueS DeeJeMÙekeâ kegâue Heäuekeäme
(a) sodium vapour lamp/meesef[Ùece Jee<he uewche
efkeâme hej JÙegl›eâceevegheeleer ™he mes efveYe&j keâjlee nw~
(a) surface area/melen #es$eheâue
(b) fluorescent lamp/Øeefleoerefhle uewche
(b) space–height ratio/mhesme TBÛeeF& Devegheele
(c) tungsten filament lamp/šbiemšve levleg uewche
(c) illumination/Øeoerheve
(d) mercury vapour lamp/ceke&âjer Jee<he uewche
130. The lamp/tube preferred for air–conditioned (d) coefficient of utilization/GheÙeesefielee iegCeebkeâ
spaces is 136. To avoid glare
Jen uewche/šŸetye pees Jeeleevegketâueve mhesme kesâ efueS hemebo ÛekeâeÛeeQOe mes yeÛeves kesâ efueS
efkeâÙee peelee nw– (a) object should be viewed from a distance/Jemleg
(a) sodium vapour lamp/meesef[Ùece Jee<he uewche keâes otj mes osKee peevee ÛeeefnS
(b) mercury vapour lamp/ceke&âjer Jee<he uewche (b) object should be moved constantly/Jemleg keâes
(c) fluorescent tube/Øeefleoerefhle šŸetye ueieeleej mLeeveebleefjle efkeâÙee peevee ÛeeefnS
(d) GLS lamp/GLS uewche (c) object should be viewed from a close
vicinity/Jemleg keâes Skeâ efvekeâšJeleea #es$e mes osKee peevee
131. The lamp that causes radio–interference is
ÛeeefnS
Jen uewche pees jsef[Ùees nmle#eshe keâe keâejCe neslee nw–
(d) viewer should move constantly/oMe&keâ keâes
(a) fluorescent tube/Øeefleoerefhle šŸetye ueieeleej Ûeuevee ÛeeefnS
(b) halogen lamp/nwueespeve uewche 137. Which of the following will need the highest
(c) mercury vapour lamp/ceke&âjer Jee<he uewche level of illumination?
(d) all of the above/Ghejesòeâ meYeer efvecve ceW mes efkeâmeceW GÛÛelece Øeoerheve mlej keâer
132. The lamp that cannot be used for dimming is DeeJeMÙekeâlee nesleer nw?
Jen uewche pees cevo ØekeâeMe kesâ efueS GheÙeesie veneR efkeâÙee (a) Living room/jnves Jeeues keâcejs ceW
pee mekeâlee nw– (b) Kitchen/jmeesF& ceW
Jesefu[bie kesâ efueS GheÙeesie efkeâÙee peelee nw– (b) ammonium chloride/Deceesevf eÙece keäueesjeF[
(c) ash/jeKe
(a) Single phase alternator/efmebieue hesâpe ØelÙeeJele&keâ
(d) none/keâesF& veneR
(b) Two phase alternator/oes hesâpe ØelÙeeJele&keâ
293. In ultrasonic welding frequency range is
(c) Three phase alternator/leerve hesâpe ØelÙeeJele&keâ
generally
(d) Transformer/š^ebmeheâece&j Deuš^emeesefvekeâ Jesefu[bie DeeJe=efòe jWpe ceW Deeceleewj hej
287. Which of the following is not an inert gas? neslee nw–
FveceW mes keâewve-mee Deef›eâÙe iewme veneR nw–
(a) 2000 to 3000 Hz/
(a) Argon/Dee@ie&ve
(b) 4000 to 20000 Hz/
(b) Carbondioxide/keâeye&ve [eFDee@keämeeF[
(c) 3000 to 4000 Hz/
(c) Helium/nerefueÙece
(d) 50000 to 80000 Hz/
(d) All of the above/Ghejeskeäle meYeer
294. Galvanizing is a process of applying a layer
288. Electric arc welding process produces of
temperature account of
iesuJesveeFefpebie keâer hejle ueeiet keâjves keâer Skeâ Øeef›eâÙee
JewÅegle Deeke&â Jesefu[bie Øeef›eâÙee ueieYeie leeheceeve GlheVe
nw–
keâjlee nw–
(a) aluminimum/SuÙegceerefveÙece
(a) 1000oC (b) 1500oC
o (b) lead/ues[
(c) 3500 C (d) 5550oC
289. Helium produces which of the following? (c) copper/keâe@hej
nerefueÙece efvecve ceW mes keâewve-mee Glheeove keâjlee nw– (d) zinc/efpebkeâ
(a) Deeper penetration/[erhej hesvš^sMeve 295. In argon arc welding argon is used as a
(b) Faster welding speeds/lespe Jesefu[bie ieefle
Deeie&ve Deeke&â Jesefu[bie ceW Deeie&ve efkeâme ™he ceW ØeÙeesie
(c) Narrower heat affected zone in base efkeâÙee peelee nw–
metal/yesme cesšue ceW meBkeâje T<cee ØeYeeefJele #es$e (a) flux/heäuekeäme
(d) All of the above/Ghejeskeäle ceW mes meYeer (b) source of heat/T<cee kesâ Œeesle
290. Due to which of the following reasons (c) agent for heat transfer/nerš š^ebmeheâj kesâ efueS
aluminum is difficult to weld? SpeWš
efvecveefueefKele ceW mes efkeâme keâejCe SuÙegceerefveÙece Jesu[ (d) shield to protect the work from oxidation/
kesâ efueS keâef"ve neslee nw–
Dee@keämeerkeâjCe mes keâeÙe& megj#ee kesâ efueS keâJeÛe
(a) it has an oxide coating/FmeceW Dee@keämeeF[ keâesefšbie
296. 50 percent duty cycle of a welding machine
neslee nw means
(b) it conducts away heat very rapidly/Ùen yengle Jesefu[bie ceMeerve keâe 50 ØeefleMele [dÙetšer Ûe›eâ celeueye
lespeer mes nerš keâe mebÛeeueve keâjleer nw nw–
(c) Both (a) and (b)/oesveeW (a) Deewj (b) (a) machine input is 50 percent of rated
(d) none of the above/Ghejeskeäle ceW mes keâesF& veneR input/ceMeerve Fvehegš jsšs[ Fvehegš keâe 50 ØeefleMele
291. For arc welding current range is usually neslee nw
Deeke&â Jesefu[bie kesâ efueS Oeeje meercee meeceevÙele: neslee (b) machine efficiency is 50 percent/ceMeerve o#elee
nw–
50 ØeefleMele nesleer nw
Electrical 50000 (MCQ) Volume II 503 YCT
(c) machine works on 50 percent output/ (a) the faces of the metal pieces to be joined are
ceMeerve 50 ØeefleMele DeeGšhegš hej keâeÙe& keâjlee nw prepared for even contact
(d) machine work for 5 minutes in a duration of pegÌ[ves Jeeues Oeeleg šgkeâÌ[eW kesâ cegKe mece mecheke&â nsleg yeveeS
10 minutes/10 efceveš keâer DeJeefOe ceW 5 efceveš kesâ peeles nQ
efueS ceMeerve keâeÙe& neslee nw (b) heating is obtained by the contact resistance
of metal pieces so be welded
297. In atomic hydrogen welding the electrode is
made of Jesu[ nesves Jeeueer Oeeleg kesâ šgkeâÌ[eW kesâ mecheke&â ØeeflejesOe Éeje
hejceeCeg neF[^espeve Jesefu[bie ceW Fueskeäš^es[ yevee neslee nerefšbie Øeehle keâer peeleer nw
nw– (c) the voltage required is 2–8 V and current
required ranges from 50 A to several hundred
(a) carbon/keâeye&ve
amperes depending upon material and the
(b) graphite/«esheâeFš area to be welded at a time
(c) tungsten/šbiemšve DeeJeMÙekeâ Jeesušspe 2–8 Jeesuš leLee DeeJeMÙekeâ Oeeje 50
(d) mild steel/ceeFu[ mšerue SefcheÙej mes keâF& meew SefcheÙej keâer meercee ceW nesleer nw pees
298. The tips of the elecrodes, for spot welding, Skeâ meceÙe hej Jesu[ nesves Jeeues heoeLe& Deewj Gmekesâ
are made of #es$eheâue hej efveYe&j keâjleer nw
Fueskeäš^es[eW keâer efmeje mhee@š Jesefu[bie kesâ efueS............. (d) all of the above/Ghejesòeâ meYeer
mes yeves nQ~ 302. Which of the following is not a welding
(a) copper alloy/keâe@hej efceße Oeeleg accessory?
(b) porcelain/Ûeerveer efceóer kesâ yele&ve efvecve ceW mes keâewve-mee Skeâ Jesefu[bie ceW meneÙekeâ veneR nw–
(c) mica/DeYeükeâ (a) Hand/nwC[
(d) carbon/keâeye&ve (b) Cable/kesâefyeue
299. During carbon arc welding (c) Electrode holder/Fueskeäš^es[ nesu[j
keâeye&ve Deeke&â Jesefu[bie kesâ oewjeve– (d) Gloves/omleeves
(a) electrode is connected to neutral if A.C. is 303. TIG welding is
used/Fueskeäš^es[ vÙetš^ue mes pegÌ[e neslee nw Ùeefo S.meer. TIG Jesefu[bie nw–
keâe GheÙeesie efkeâÙee peelee nw (a) thorium iodine gas welding/LeesefjÙece DeeÙees[erve
(b) electrode is not connected to any voltage iewme Jesequ[bie
source when A.C. is used/Fueskeäš^es[ efkeâmeer Yeer (b) thermally induced gas welding/leeheerÙe ØesjkeâerÙe
Jeesušspe meesme& mes pegÌ[e veneR neslee nw, Ùeefo S.meer. keâe iewme Jesequ[bie
ØeÙeesie efkeâÙee peelee nw (c) temperature insulated gas welding/leeheceeve
(c) electrode is negative with respect to the
Fvmeguesšs[ iewme Jesequ[bie
work if D.C. is used/Fueskeäš^es[ keâeÙe& kesâ mecyevOe
(d) tungsten inert gas welding/šbiemšve efveef<›eâÙe iewme
ceW efveiesefšJe neslee nw Ùeefo [er.meer. keâe ØeÙeesie neslee nw
Jesequ[bie
(d) electrode is positive with respect to the
304. In resistance welding the magnitude of current
work if D.C. is used/Fueskeäš^es[ keâeÙe& kesâ mecyevOe
is controlled
ceW hee@efpeefšJe neslee nw Ùeefo [er.meer. keâe ØeÙeesie neslee nw
ØeeflejesOe Jesefu[bie ceW Oeeje keâe heefjceeCe efveÙebe$f ele neslee
300. A rectifier for welding has voltage/current
characteristic as nw–
Jesefu[bie kesâ efueS Skeâ jsefkeäšheâeÙej kesâ ™he ceW (a) by varying the primary voltage of the welding
Jeesušspe/Oeeje DeefYeue#eCe neslee nw– transformer using an auto–transformer
between supply and welding transformer
(a) static/mšsefškeâ
Deehetefle&& Deewj Jesefu[bie heefjCeeefce$e kesâ ceOÙe Skeâ mJe
(b) variable/JewefjSyeue
heefjCeeefce$e keâe GheÙeesie keâjkesâ Jesefu[bie heefjCeeefce$e kesâ
(c) drooping/[^e@efhebie
ØeeLeefcekeâ Jeesušspe keâes heefjJeefle&le keâjkesâ
(d) rising/jeFefpebie (b) by changing the primary turns of the welding
301. In upset butt welding transformer
Dehemesš yeš Jesefu[bie ceW– Jesefu[bie heefjCeeefce$e kesâ ØeeLeefcekeâ šve& keâes yeouekeâj
Electrical 50000 (MCQ) Volume II 504 YCT
(c) by varying the magnitude and waveform of (a) holding time/nesefu[bie meceÙe
the primary as well as secondary current by (b) amount of weld current/Jesu[ Oeeje keâer cee$ee
using thyratron or ignitron
(c) amount of squeeze pressure /efveÛeesÌ[ oeye keâer cee$ee
LeeÙejsš^eve Ùee Fiveerš^eve keâe GheÙeesie keâjkesâ ØeeLeefcekeâ kesâ
(d) all of the above/Ghejesòeâ meYeer
meeLe–meeLe efÉleerÙekeâ Oeeje kesâ heefjceeCe Deewj lejbie™he keâes
310. For power factor correction is a welding
heefjJeefle&le keâjkesâ
circuit, a capacitor is usually connected
(d) any of the above/Ghejesòeâ ceW mes keâesF& Yeer Jesefu[bie heefjheLe ceW Meefòeâ iegCekeâ mebMeesOeve nsleg mebOeeefj$e
305. The main drawback of resistance welding is
meeceevÙele: mebÙeesefpele efkeâÙee peelee nw–
ØeeflejesOe Jesefu[bie keâer cegKÙe neefve nw–
(a) across the mains/cesvme kesâ HeeMJe& ceW
(a) high initial as well as maintenance cost
(b) across secondary side of welding transformer
ØeejefcYekeâ Deewj jKe-jKeeJe ueeiele GÛÛe
Jesefu[bie heefjCeeefce$e kesâ efÉleerÙekeâ he#e kesâ heeÕe& ceW
(b) difficult shapes and sections cannot be
(c) across primary side of welding transformer
welded
Jesefu[bie heefjCeeefce$e kesâ ØeeLeefcekeâ he#e ceW
peefšue Deekeâej Deewj meskeäMeve Jesu[ veneR efkeâS pee mekeâles
(d) across arcing electrodes/DeeefkeËâie Fueskeäš^es[md e kesâ
nQ
HeeMJe& ves
(c) only similar metals can be welded
311. Which of the following is different from the
kesâJeue meceeve OeelegSB ner Jesu[ keâer pee mekeâleer nw
remaining?
(d) parent metal is affected/cetue Oeeleg ØeYeeefJele nesleer nw efvecve ceW mes keâewve DevÙe meYeer mes Deueie nw?
306. Plain and butt welds may be used on materials
(a) Butt welding/yeš Jesefu[bie
upto thickness of about
meeoe Deewj yeš Jesefu[bie ueieYeie efkeâme ceesšeF& lekeâ kesâ (b) Electro–slag welding/Fueskeäš^es muewie Jesefu[bie
heoeLe& nsleg GheÙeesie keâer pee mekeâleer nw? (c) TIG welding/TIG Jesefu[bie
(a) 5 mm (b) 10 mm (d) MIG welding/MIG Jesefu[bie
(c) 25 mm (d) 40 mm 312. Chipping hammers are used
307. In flash–butt welding efÛeefhebie (efÚue) nLeewÌ[s keâe ØeÙeesie neslee
nw–
heäuewMe yeš Jesefu[bie ceW– (a) for slag welding/Oeelegceue Jesefu[bie kesâ efueS
(a) no special preparation of the faces to be (b) for aligning the pieces to be welded
welded in necessary Jesu[ nesves Jeeues šgkeâÌ[eW keâe mebjsefKele keâjves kesâ efueS
Jesu[ efkeâS peeves Jeeues cegKeeW keâer efJeefMe° lewÙeejer keâer (c) for removing slag from welding
DeeJeMÙekeâlee veneR nesleer nw Jesefu[bie mes Oeelegceue nševes nsleg
(b) clean and pure weld is obtained (d) for marking spots to be welded
mJeÛÚ Deewj Megæ Jesu[ Øeehle neslee nw Jesefu[bie nesves nsleg OeyyeeW keâes efÛeefvnle keâjves kesâ efueS
(c) power requirement is less 313. The danger of electric shock is maximum
Meefòeâ keâer DeeJeMÙekeâlee keâce nesleer nw efJeÅegle Peškesâ keâe Keleje DeefOekeâlece neslee nw–
(d) all of the above/Ghejesòeâ meYeer (a) before welding/Jeseuf [bie mes henues
308. Spot welding process basically depends on (b) during arcing/DeefkeËâie kesâ oewjeve
mhee@š Jesefu[bie Øeef›eâÙee cetuele: efveYe&j keâjleer nw– (c) while inserting electrode into the holder
(a) generation of heat/T<cee kesâ peveve hej Fueskeäš^es[ keâes nesu[j ceW ØeJesMe keâjeles meceÙe
(b) application of forging pressure (d) after welding/Jesefu[bie kesâ yeeo
heâesefpeËie oeye kesâ DevegØeÙeesie hej 314. The eyes of welding operator must be protected
against
(c) both (a) and (b)/(a) Deewj (b) oesveeW Jesefu[bie Dee@hejsšj keâer DeeBKeeW kesâ Øeefle megjef#ele nesveer
(d) ohmic resistance/Deesefåcekeâ ØeeflejesOe ÛeeefnS–
309. In spot welding, composition and thickness of (a) infrared radiations/DeJejòeâ efJeefkeâjCeeW
the base metal determines the (b) ultraviolet radiations/hejeyeQieveer efJeefkeâjCeeW
mhee@š Jesefu[bie ceW mebjÛevee Deewj yesme cesšue keâer ceesšeF& (c) both (a) and (b)/(a) Deewj (b) oesveeW
................ efveOee&efjle nesleer nQ~ (d) solar radiations/meewj efJeefkeâjCeeW
Electrical 50000 (MCQ) Volume II 505 YCT
315. Which of the following automatic welding (a) carbon/keâeye&ve
processes is likely to give maximum rate of (b) copper alloy or pure copper
metal deposition?
leeceü efceßeOeeleg Ùee Megæ leeceü
efvecve ceW mes keâewve mes mJeÛeeefuele Jesefu[bie Øeef›eâÙee ceW Oeeleg
(c) mica/DeYeükeâ
pecee keâer DeefOekeâlece oj osves keâer mebYeeJevee nesleer nw?
(d) porcelain/heesme&ueerve
(a) Multiple power submerged arc
321. During spot welding, the current flows for
keâF& Meefòeâ peueceive Deeke&â
mhee@š Jesefu[bie kesâ oewjeve, Oeeje ................ lekeâ ØeJeeefnle
(b) Gas shielded bare wire/iewme yebo vebiee leej nesleer nw~
(c) Single wire submerged arc
(a) fraction of a minute/Skeâ efceveš kesâ DebMe
Skeâue leej peueceive Deeke&â
(b) fraction of a second to several seconds
(d) Continuous flux covered electrode/efvejblej
Skeâ meskesâC[ kesâ DebMe mes keâF& meskesâC[ lekeâ
heäuekeäme mes {keâe Fueskeäš^es[
(c) few milliseconds/kegâÚ efceueer meskesâC[
316. In a welded joint poor fusion is on account of
(d) few microseconds/kegâÚ ceeF›eâes meskesâC[
Jesu[s[ peesÌ[ ceW Kejeye mebueÙeve kesâ keâejCe neslee nw?
322. Spot welding is employed for
(a) improper current/DevegefÛele Oeeje
mhee@š Jesefu[bie ØeÙegòeâ nesleer nw?
(b) high welding speed/GÛÛe Jesefu[bie ieefle
(a) thin metal sheets (thickness being usually
(c) uncleaned metal surface/ievoer Oeeleg melen limited to 10–12 mm)
(d) lack of flux/heäuekeäme keâer keâceer heleueer Oeeleg ÛeeojeW ceW (ceesšeF& meeceevÙele: 10 mes 12
317. Which of the following uses consumable efceceer. nes )
electrodes?
(b) castings only/kesâJeue keâeefmšbie ceW
efvecve ceW mes efkeâmeceW Kehele ÙeesiÙe Fueskeäš^es[ keâe ØeÙeesie
(c) thick sections/ceesšs meskeäMeve ceW
keâjles nQ?
(d) rough and irregular surfaces
(a) TIG
Kegjoje Deewj DeefveÙeefcele meleneW hej
(b) MIG
323. Spot welding
(c) laser/uesmej
mhee@š Jesefu[bie
(d) None of the above/Ghejesòeâ ceW mes keâesF& veneR
(a) makes the weld air tight
318. In which of the following welding methods the
Jesu[ keâes JeeÙeg šeFš yeveelee nw
molten metal is poured for joining the metals
(b) makes the weld water tight
efvecve ceW mes efkeâme Jesefu[bie efJeefOe ceW efheIeueer ngF& Oeeleg,
Jesu[ keâes peue šeFš yeveelee nw
OeelegDeeW keâes peesÌ[ves kesâ efueS [euee peelee nw~
(c) provides mechanical strength
(a) Gas welding/iewme Jesefu[bie
Ùeebef$ekeâ meeceLÙe& Øeoeve keâjlee nw
(b) Thermit welding/Leefce&š Jesefu[bie
(d) all of the above/Ghejesòeâ meYeer
(c) TIG welding/TIG Jesefu[bie
324. Projection welding can be considered as a mass
(d) Arc welding/Deeke&â Jesefu[bie production form of
319. The porosity of weld joint may be caused by ØeespeskeäMeve Jesefu[bie keâe efJeÛeej yeÌ[s hewceeves hej ..........
Jesu[ peesÌ[ keâer mejbOeÇlee kesâ keâejCe nesleer nw?
Glheeove kesâ ™he ceW efkeâÙee pee mekeâlee nw–
(a) poor base metal/Kejeye yesme cesšue
(a) seam welding/meerce Jesefu[bie
(b) incorrect size of electrode/Fueskeäš^es[ keâe ieuele
(b) spot welding/mhee@š Jesefu[bie
Deekeâej
(c) upset welding/Dehemesš Jesefu[bie
(c) low welding current/efvecve Jesefu[bie Oeeje
(d) flash welding/heäuewMe Jesefu[bie
(d) any of the above/Ghejesòeâ ceW mes keâesF& Yeer
320. The tips of the electrodes, for spot welding are 325. In comparison to spot welding, projection
made of welding has the advantages(s) of
mhee@š Jesefu[bie kesâ efueS Fueskeäš^es[ keâer efšhme keâer yeveer mhee@š Jesefu[bie keâer leguevee ceW ØeespeskeäMeve Jesefu[bie kesâ ueeYe
nesleer nw– nQ–
Electrical 50000 (MCQ) Volume II 506 YCT
(a) simple welding process, more output and (b) stainless and coated steels
good finished appearance mšsveuesme Deewj keâesšs[ mšerue
meeOeejCe Jesefu[bie Øeef›eâÙee, DeefOekeâ efveie&le leLee DeÛÚer (c) copper and high copper alloys
meceeefhle GheefmLeefle leeceü Deewj GÛÛe leeceü efceßeOeeleg
(b) electrode life is increased owing to use to low (d) alloys of nickel and magnesium
current density and low pressure efveefkeâue Deewj cewivesefMeÙece keâer efceßeOeeleg
keâce Oeeje IevelJe leLee keâce oeye keâe ØeÙeesie keâjkesâ 330. The power factor of a spot welding machine is
Fueskeäš^es[ kesâ peerJevekeâeue kesâ yeÌ{ves keâe keâejCe nw expected to be about
(c) it is easy to weld certain parts which cannot mhee@š Jesefu[bie ceMeerve keâe Meefòeâ iegCekeâ ueieYeie neslee nw-
be welded by spot welding
(a) 0.3 to 0.5 lagging/0.3 – 0.5 he§eieeceer
kegâÚ efveef§ele efnmmeeW keâes Jesu[ keâjvee Deemeeve neslee nw pees
(b) 0.8 to 0.85 lagging/0.8 – 0.85 he§eieeceer
mhee@š Jesefu[bie Éeje veneR Jesu[ efkeâÙee pee mekeâlee nw
(c) 0.75 to 0.85 lagging/0.75 – 0.85 he§eieeceer
(d) all of the above/Ghejesòeâ meYeer
(d) unity/FkeâeF&
326. In seam welding
331. In arc welding, the temperature of the arc
meerce Jesefu[bie ceW–
produced is of the order of
(a) the workpiece is fixed and disc electrodes Deeke&â Jesefu[bie ceW GlheVe Deeke&â keâe leeheceeve efkeâme ›eâce
move
keâe neslee nw–
keâeÙe&KeC[ efmLej Deewj ef[mkeâ Fueskeäš^es[ ieefle keâjles nQ
(a) 1,0000C (b) 3,5000C–4,0000C
(b) the workpiece moves but rotating electodes
(c) 5,0000C–7,5000C (d) 7,5000C–10,0000C
are fixed
332. The electric arc has
keâeÙe&KeC[ ieefle keâjlee nw uesefkeâve IetCeea Fueskeäš^es[ efmLej
JewÅegle Deeke&â ceW neslee nw–
nesles nQ
(a) linear resistance characteristic
(c) the electrodes used are of disc or roller shape
jsKeerÙe ØeeflejesOe DeefYeue#eCe
ØeÙegòeâ Fueskeäš^es[ ef[mkeâ Ùee jesuej Deekeâej kesâ nesles nQ~
(b) positive resistance characteristic
(d) either (a) or (b) and (c)/Ùee lees (a) Ùee (b) Deewj
Oeveelcekeâ ØeeflejesOe DeefYeue#eCe
(c)
(c) negative resistance characteristic
327. In case of seam welding, the flow of current
through the electrode should be $e+Ceelcekeâ ØeeflejesOe DeefYeue#eCe
meerce Jesefu[bie kesâ efmLeefle ceW Fueskeäš^es[ mes ØeJeeefnle Oeeje (d) highly inductive characteristic
nesveer ÛeeefnS– GÛÛe ØesjkeâerÙe DeefYeue#eCe
(a) intermittent/®keâ-®keâ keâj 333. In an electric arc welding, the voltage required
to strike d.c. arc is about
(b) continuous/ ueieeleej
JewÅegle Deeke&â Jesefu[bie ceW Deeke&â keâes mš^eFkeâ keâjves nsleg
(c) either (a) or (b)/Ùee lees (a) Ùee (b)
d.c. Jeesušspe ueieYeie neslee nw–
328. In ............. welding it is essential that the
(a) 50–60 V (b) 80–90 V
surfaces to be welded are clean, dust and dirt
(c) 100–120 V (d) 220 V
free.
334. In percussion welding
............... Jesefu[bie ceW DeeJeMÙekeâ neslee nw efkeâ Jesu[ nesves
škeäkeâj Jesefu[bie ceW–
Jeeueer melen mJeÛÚ nes leLee Oetue Deewj ieboieer mes cegòeâ nes
(a) the process used depends on the arc effect for
(a) butt/yeš heating and not on the resistance
(b) spot/mhee@š leeheve kesâ efueS ØeÙeesie keâer peeves Jeeueer Øeef›eâÙee ØeeflejesOe hej
(c) seam/meerce vener yeefukeâ Dee@ke&â kesâ ØeYeeJe hej efveYe&j keâjleer nw
(d) both spot and seam/mhee@š Deewj meerce oesveeW (b) the action of process is so rapid that there is
329. Seam welding in normally not recommended little heating effect in the material adjacent to
for the weld
meerce Jesefu[bie meeceevÙe kesâ efueS DevegMebefmele veneR nesleer nw? Øeef›eâÙee keâer ef›eâÙee Fleveer leer›e nesleer nw efkeâ Jesu[ mes mešs
(a) aluminium alloys/SuÙetefceefveÙece efceßeOeeleg heoeLe& ceW LeesÌ[e mee leeheve ØeYeeJe neslee nw
Electrical 50000 (MCQ) Volume II 507 YCT
(c) the equipment used is quite expensive (c) current required is above 5,000 A and the
GheÙeesie efkeâS peeves Jeeues GhekeâjCe keâeheâer cenbies nesles nQ voltage between the electrodes is usually less
than 2 V (open–circuit voltage less than 12V)
(d) all of the above/Ghejesòeâ meYeer
335. The basic electrical requirement in arc welding
DeeJeMÙekeâ Oeeje 5,000 A mes DeefOekeâ nesleer nw leLee
is that there should be Fueskeäš^es[es kesâ ceOÙe Jeesušspe meeceevÙele: 2 V mes keâce
Deeke&â Jesefu[bie ceW ceewefuekeâ JewÅegle DeeJeMÙekeâlee Ùen nw efkeâ neslee nw~ (Keguee heefjheLe Jeesušspe 12 V mes keâce neslee nw)
............... nesvee ÛeeefnS~ (d) all of the above/Ghejesòeâ meYeer
(a) high open–circuit voltage 340. Arc blow results in
GÛÛe Keguee heefjheLe Jeesušlee Deeke&â yueesW heefjCeece ........ ceW neslee nw–
(b) no arc blow/Deeke&â yuees veneR (a) non–uniform weld beads/Demeceeve yesu[ yeer[dme
(c) dc power supply/[er.meer. Meefòeâ Deehetefle&& (b) shallow weld puddle giving rise to weak weld
(d) coated electrodes/uesefhele Fueskeäš^es[ keâcepeesj Jesu[ kesâ efueS oer pee jner efJekeâefmele GLeuee Jesu[
336. In an electric arc welding, the voltage required heesKej
to strike a.c. arc is about (c) splashing out of metal from weld puddle
JewÅegle Deeke&â Jesefu[bie ceW Deeke&â keâes mš^eFkeâ keâjves nsleg Jesu[ heesKej mes Oeeleg kesâ yeenj efÚÌ[keâvee
S0meer0 Jeesušspe ueieYeie neslee nw– (d) all of the above defects/Ghejesòeâ meYeer oes<e
(a) 50–60 V (b) 80–90 V 341. Arc blow effects occurring with dc welding
(c) 100–120 V (d) 230 V machines can be reduced by
337. For an electric arc welding the current range is [er 0meer0 Jesefu[bie ceMeerve kesâ meeLe nesves Jeeuee Deeke&â yuees
usually .................. Éeje keâce efkeâÙee pee mekeâlee nw~
JewÅegle Deeke&â Jesefu[bie kesâ efueS Oeeje keâer meercee meeceevÙele: (a) shortening the arc column length
nesleer nw– Deeke&â mlecYe uecyeeF& keâes Úesšer keâjkesâ
(a) 50–1,000 A (b) reducing the welding current or electrode size
(b) 30–50 A or rate of travel of the electrode
(c) 20–30 A Jesefu[bie Oeeje Ùee Fueskeäš^es[ Deekeâej Ùee Fueskeäš^es[ kesâ
(d) below 20 V/ 20 V mes keâce š^Jesue keâer oj keâes keâce keâjkesâ
338. Increased heat due to shorter arc is harmful (c) wrapping the welding electrode cable a few
owing to turns around the work
yeÌ{er ngF& Gâ<cee Úesšer Deeke&â kesâ keâejCe neefvekeâejkeâ nesleer Jesefu[bie Fueskeäš^es[ kesâyeue keâes Jeke&â kesâ ÛeejeW Deesj kegâÚ
nw? šve& uehesškeâj
(a) burn through/peueves mes (d) all of the above/Ghejesòeâ meYeer
(b) excessive porosity/DelÙeefOekeâ mejbOeÇlee 342. In an electric welding, major personal hazards
(c) undercutting of base material are
yesme cesšue keâe Deb[jkeâefšbie JewÅegle Jesefu[bie ceW ØecegKe Keleje neslee nw?
(d) all of the above/Ghejesòeâ meYeer (a) weld spatter/Jesu[ efÚšs
339. In spot welding (b) flying sparks/efÛevieeefjÙeeW keâe GÌ[vee
mhee@š Jesefu[bie ceW– (c) harmful infrared and ultraviolet rays from the
(a) it is desirable to clean the sheets thoroughly arc. /Deeke&â mes neefvekeâejkeâ DeJejòeâ Deewj hejeyeQieveer efkeâjCeW
before welding (d) all of the above/Ghejesòeâ meYeer
Jesefu[bie mes henues Meerš keâes DeÛÚer lejn mes meeheâ keâjvee 343. During electric arc welding as the thickness of
JeebÚveerÙe neslee nw the metal to be welded increases
(b) the work–pieces being welded are pressed JewÅegle Deeke&â Jesefu[bie kesâ oewjeve Jesu[ keâer peeves Jeeueer
together by mechanical pressure exerted Oeeleg keâer ceesšeF& pewmes–pewmes yeÌ{eF& peeleer nw–
through electrodes. (a) voltage is increased keeping current the same
Jesu[ efkeâS peeves Jeeues keâeÙe&KeC[ keâes Fueskeäš^es[ kesâ Oeeje keâes Skeâmeceeve jKeles ngS Jeesušspe yeÌ{ peelee nw
ceeOÙece mes ueieeS ieS Ùeebef$ekeâ oeye Éeje Skeâ meeLe (b) current is increased keeping voltage
oyeeÙee peelee nw unchanged
Jeesušspe keâes DeheefjJeefle&le jKeles ngS Oeeje yeÌ{eF& peeleer nw
Electrical 50000 (MCQ) Volume II 508 YCT
(c) current and voltage, both are increased 348. In direct current reverse polarity or electrode
Oeeje Deewj Jeesušspe oesveeW yeÌ{ peelee nw positive welding
(d) current and voltage, both are reduced efo° Oeeje efJehejerle OeÇgJelee ceW (DCRP) Ùee Fueskeäš^es[
Oeeje Deewj Jeesušspe oesveeW Ieš peeles nQ Oeveelcekeâ Jesefu[bie Fueskeäš^es[ –
344. In an electric arc welding , the voltage required (a) workpiece is the hottest/keâeÙe&KeC[ Deeflelehle neslee
to maintain the arc will be nw
JewÅegle Deeke&â Jesefu[bie ceW Deeke&â keâes yeveeÙes jKeves nsleg (b) bare and medium coated electrodes can be
Jeesušspe keâer DeeJeMÙekeâlee nesleer nw– used /vebies Deewj ceOÙece uesefhele Fueskeäš^es[ GheÙeesie efkeâS
(a) 250–500 V pee mekeâles nQ
(b) 150–250 V (c) electrode is the hottest/Fueskeäš^es[ Deeflelehle neslee nw
(c) 20–30 V (d) base metal penetration is narrow and deep
(d) below 10 V/10 V mes keâce yesme cesšue hesveerš^sMeve mebkeâerCe& Deewj ienje neslee nw
345. In a dc arc welding 349. The electrode is coated in order to
[er.meer. Deeke&â Jesefu[bie ceW– Fueskeäš^es[ ›eâce ceW uesefhele nw–
(a) both electrode as well as workpiece are made (a) improve bead quality/yeer[ keäJeeefuešer megOeejves nsleg
+ ve
(b) cleans the base metal/yesme heoeLe& kesâ meheâeF& nsleg
Fueskeäš^es[ Deewj keâeÙe&KeC[ oesveeW Oeveelcekeâ yeveeS peeles nQ
(c) provide shielding to weld pool/Jesu[ hetue keâes
(b) both electrode as well as workpiece are made
–ve Meeru[ Øeoeve keâjves nsleg
Fueskeäš^es[ Deewj keâeÙe&KeC[ oesveeW $e+Ceelcekeâ yeveeS peeles nQ (d) prevent atmospheric contamination/JeeleeJejCeerÙe
(c) electrode is made –ve and workpiece + ve mebheke&â ØeYeeJe keâes jeskeâves nsleg
Fueskeäš^es[ $e+Ceelcekeâ Deewj keâeÙe&KeC[ Oeveelcekeâ yeveeS 350. In DCRP or electrode positive welding, the heat
peeles nQ produced at the electrode is ............... of total
heat produced.
(d) electrode is made +ve and workpiece – ve
DCRP Ùee Oeveelcekeâ Fueskeäš^es[ Jesefu[bie ceW Fueskeäš^es[ hej
Fueskeäš^es[ Oeveelcekeâ Deewj keâeÙe&KeC[ $e+Ceelcekeâ yeveeS
GlheVe T<cee, mechetCe& Glheeefole T<cee keâer ...............
peeles nQ
nesleer nw–
346. Flat position welding is considered to be the
most (a) one–third/Skeâ–efleneF&
heäuewš heespeerMeve Jesefu[bie meyemes DeefOekeâ ceevee peelee nw– (b) two–third/oes–efleneF&
(a) easiest and economical/Deemeeve Deewj efceleJÙeÙeer (c) three–fourth/leerve–ÛeewLeeF&
(b) hazardous/Kelejveekeâ (d) one–fourth/Skeâ–ÛeewLeeF&
(c) adaptable for welding of both ferrous and 351. The length of arc required depends on
non–ferrous metals particularly for cast iron DeeJeMÙekeâ Deeke&â keâer uecyeeF& efveYe&j keâjleer nw–
efJeMes<ele: keâemš DeeÙejve nsleg ueewn Deewj Deueewn OeelegDeeW (a) kind of electrodes used, its coating and its
oesveeW kesâ Jesefu[bie kesâ efueS Devegketâue diameter
(d) both (a) and (c)/(a) Deewj (c) oesveeW ØeÙegòeâ Fueskeäš^es[ kesâ Øekeâej, Fmekesâ uesheve Deewj Fmekesâ
347. In direct current straight polarity (DCSP) or JÙeeme hej
electrode negative welding (b) magnitude of current used
efo°Oeeje meerOeer OeÇgJelee ceW Ùee $e+Ceelcekeâ Fueskeäš^es[ ØeÙegòeâ Oeeje kesâ heefjceeCe hej
(c) position of welding/Jesefu[bie keâer efmLeefle
Jesefu[bie ceW–
(a) heavily coated electrodes are used (d) all of the above/Ghejesòeâ meYeer
Yeejer uesefhele Fueskeäš^es[ ØeÙegòeâ efkeâS peeles nQ 352. Overhead welding position is thought to be the
most
(b) base metal penetration is narrow and deep
efMejesheefj Jesefu[bie efmLeefle keâe efJeÛeej meyemes ..................
yesme heoeLe& hesveerš^sMeve mebkeâerCe& Deewj ienje neslee nw
(c) electrode is the hottest/Fueskeäš^es[ Deeflelehle neslee nw neslee nw~
(d) workpiece is relatively cooler (a) hazardous/Kelejveekeâ (b) economical/efceleJÙeÙeer
keâeÙe&KeC[ meehes#ele: "C[e jnlee nw (c) useful/GheÙeesieer (d) difficult/keâef"ve
ANSWER
1. (c) 2. (d) 3. (d) 4. (a) 5. (d) 6. (a) 7. (b) 8. (d) 9. (b) 10. (c)
11. (a) 12. (d) 13. (b) 14. (b) 15. (b) 16. (c) 17. (a) 18. (c) 19. (b) 20. (a)
21. (b) 22. (a) 23. (b) 24. (c) 25. (b) 26. (d) 27. (a) 28. (c) 29. (b) 30. (b)
31. (d) 32. (b) 33. (c) 34. (d) 35. (a) 36. (b) 37. (c) 38. (a) 39. (d) 40. (b)
41. (c) 42. (c) 43. (c) 44. (d) 45. (a) 46. (b) 47. (b) 48.(d) 49. (d) 50. (b)
51. (b) 52. (d) 53. (b) 54. (c) 55. (b) 56. (c) 57. (a) 58. (a) 59. (c) 60. (a)
61. (a) 62. (b) 63. (a) 64. (a) 65. (d) 66. (c) 67. (d) 68. (d) 69. (c) 70. (d)
71. (d) 72. (d) 73. (b) 74. (b) 75. (d) 76. (c) 77. (a) 78. (d) 79. (b) 80. (c)
81. (d) 82. (a) 83. (b) 84. (c) 85. (a) 86. (d) 87. (c) 88. (c) 89. (c) 90. (d)
91. (b) 92. (a) 93. (c) 94. (d) 95. (c) 96. (d) 97. (d) 98. (d) 99. (d) 100. (d)
101. (b) 102. (c) 103. (d) 104. (d) 105. (d) 106. (c) 107. (d) 108. (c) 109. (c) 110. (c)
111. (a) 112. (c) 113. (b) 114. (a) 115. (c) 116. (a) 117. (b) 118. (b) 119. (a) 120. (a)
121. (b) 122. (d) 123. (d) 124. (d) 125. (a) 126. (a) 127. (b) 128. (c) 129. (b) 130. (c)
131. (a) 132. (b) 133. (a) 134. (c) 135. (b) 136. (a) 137. (c) 138. (a) 139. (c) 140. (d)
141. (a) 142. (b) 143. (c) 144. (d) 145. (d) 146. (a) 147. (d) 148. (b) 149. (b) 150. (c)
151. (a) 152. (a) 153. (b) 154. (b) 155. (c) 156. (d) 157. (a) 158. (c) 159. (d) 160. (c)
161. (b) 162. (b) 163. (d) 164. (d) 165. (a) 166. (c) 167. (d) 168. (a) 169. (a) 170. (d)
171. (d) 172. (c) 173. (a) 174. (b) 175. (c) 176. (c) 177. (b) 178. (a) 179. (d) 180. (b)
181. (d) 182. (d) 183. (d) 184. (b) 185. (a) 186. (c) 187. (b) 188. (a) 189. (c) 190. (c)
191. (d) 192. (d) 193. (d) 194. (b) 195. (a) 196. (b) 197. (d) 198. (b) 199. (a) 200. (b)
201. (d) 202. (a) 203. (b) 204. (b) 205. (c) 206. (d) 207. (c) 208. (a) 209. (d) 210. (b)
211. (b) 212. (a) 213. (c) 214. (c) 215. (d) 216. (c) 217. (a) 218. (c) 219. (d) 220. (a)
221. (a) 222. (a) 223. (c) 224. (d) 225. (a) 226. (b) 227. (d) 228. (d) 229. (c) 230. (a)
231. (d) 232. (d) 233. (c) 234. (a) 235. (b) 236. (c) 237. (d) 238. (a) 239. (b) 240. (b)
241. (c) 242. (d) 243. (c) 244. (d) 245. (c) 246. (d) 247. (c) 248. (b) 249. (d) 250. (d)
251. (b) 252. (c) 253. (a) 254. (a) 255. (d) 256. (b) 257. (c) 258. (b) 259. (b) 260. (a)
261. (b) 262. (b) 263. (d) 264. (b) 265. (a) 266. (b) 267. (c) 268. (c) 269. (a) 270. (b)
Electrical 50000 (MCQ) Volume II 550 YCT
271. (c) 272. (a) 273. (c) 274. (b) 275. (b) 276. (a) 277. (a) 278. (b) 279. (d) 280. (a)
281. (c) 282. (b) 283. (d) 284. (d) 285. (a) 286. (d) 287. (b) 288. (d) 289. (d) 290. (c)
291. (d) 292. (d) 293. (b) 294. (d) 295. (d) 296. (d) 297. (c) 298. (a) 299. (c) 300. (c)
301. (d) 302. (b) 303. (d) 304. (d) 305. (a) 306. (c) 307. (d) 308. (c) 309. (d) 310. (c)
311. (a) 312. (c) 313. (c) 314. (c) 315. (a) 316. (a) 317. (b) 318. (b) 319. (a) 320. (b)
321. (b) 322. (a) 323. (c) 324. (b) 325. (d) 326. (d) 327. (a) 328. (c) 329. (c) 330. (a)
331. (b) 332. (c) 333. (a) 334. (d) 335. (a) 336. (b) 337. (a) 338. (d) 339. (d) 340. (d)
341. (d) 342. (d) 343. (b) 344. (c) 345. (c) 346. (d) 347. (b) 348. (c) 349. (a) 350. (b)
351. (d) 352. (a) 353. (c) 354. (a) 355. (c) 356. (d) 357. (a) 358. (d) 359. (d) 360. (d)
361. (b) 362. (c) 363. (d) 364. (a) 365. (c) 366. (c) 367. (a) 368. (d) 369. (d) 370. (b)
371. (b) 372. (d) 373. (c) 374. (a) 375. (c) 376. (b) 377. (c) 378. (a) 379. (a) 380. (c)
381. (a) 382. (b) 383. (b) 384. (c) 385. (b) 386. (a) 387. (d) 388. (c) 389. (a) 390. (c)
391. (b) 392. (a) 393. (c) 394. (b) 395. (d) 396. (d) 397. (b) 398. (c) 399. (b) 400. (d)
401. (c) 402. (b) 403. (c) 404. (c) 405. (d) 406. (a) 407. (b) 408. (a) 409. (a) 410. (d)
411. (d) 412. (b) 413. (b) 414. (d) 415. (d) 416. (a) 417. (d) 418. (c) 419. (a) 420. (a)
421. (a) 422. (b) 423. (c) 424. (c) 425. (d) 426. (b) 427. (c) 428. (c) 429. (d) 430. (a)
431. (d) 432. (d) 433. (c) 434. (d) 435. (d) 436. (b) 437. (d) 438. (d) 439. (b) 440. (b)
441. (a) 442. (b) 443. (d) 444. (a) 445. (b) 446. (c) 447. (c) 448. (d) 449. (c) 450. (c)
451. (b) 452. (d) 453. (d) 454. (b) 455. (c) 456. (c) 457. (b) 458. (d) 459. (d) 460. (b)
461. (d) 462. (d) 463. (d) 464. (d) 465.(a) 466. (b) 467. (d) 468. (d) 469. (a) 470. (a)
471. (d) 472. (d) 473. (d) 474. (c) 475. (c) 476. (d) 477. (c) 478. (c) 479. (b) 480. (b)
481. (c) 482. (a) 483. (c) 484. (a) 485. (a) 486. (b) 487. (d) 488. (a) 489. (d) 490. (d)
491. (b) 492. (d) 493. (b) 494. (d) 495. (c) 496. (b) 497. (b) 498. (d) 499. (d) 500. (c)
501. (d) 502. (d) 503. (a) 504. (d) 505. (c) 506. (d) 507. (c) 508. (b) 509. (b) 510. (c)
511. (c) 512. (b) 513. (c) 514. (a) 515. (a) 516. (d) 517. (b) 518. (a) 519. (c) 520. (a)
521. (c) 522. (d) 523. (c) 524. (a) 525. (b) 526. (c) 527. (a) 528. (a) 529. (b) 530. (a)
531. (c) 532. (a) 533. (a) 534. (a) 535. (b) 536. (c) 537. (b) 538. (d) 539. (a) 540. (b)
541. (c) 542. (a) 543. (a) 544. (c) 545. (d) 546. (c) 547. (a) 548. (b) 549. (d) 550. (c)
551. (a) 552. (a) 553. (d) 554. (b) 555. (a) 556. (d) 557. (c) 558. (c) 559. (a) 560. (b)
561. (a) 562. (c) 563. (d) 564. (d) 565. (d) 566. (a) 567. (c) 568. (b) 569. (a) 570. (b)
571. (b) 572. (b) 573. (a) 574. (b) 575. (b) 576. (b) 577. (c) 578. (c) 579. (a) 580. (c)
581. (b) 582. (a) 583. (b) 584. (c) 585. (b) 586. (a) 587. (a) 588. (b) 589. (d) 590. (d)
591. (d) 592. (c) 593. (b) 594. (b) 595. (d) 596. (a) 597. (d) 598. (c) 599. (d) 600. (b)
601. (a) 602. (b) 603. (c) 604. (a) 605. (c) 606. (a) 607. (d) 608. (d) 609. (d) 610. (a)
611. (b) 612. (a) 613. (d) 614. (d) 615. (b) 616. (d) 617. (d) 618. (d) 619. (c) 620. (b)
621. (c) 622. (a) 623. (b) 624. (c) 625. (a) 626. (b) 627. (c) 628. (b) 629. (d) 630. (c)
631. (d) 632. (a) 633. (b) 634. (a) 635. (b) 636. (d) 637. (a) 638. (d) 639. (d) 640. (d)
641. (a) 642. (b) 643. (c) 644. (a) 645. (d) 646. (b) 647. (c) 648. (a) 649. (a) 650. (c)
651. (b) 652. (a) 653. (b) 654. (a) 655. (d) 656. (a) 657. (b) 658. (c) 659. (a) 660. (d)
661. (b) 662. (c) 663. (b) 664. (d) 665. (b) 666. (d) 667. (c) 668. (a) 669. (b) 670. (d)
671. (d) 672. (b) 673. (d) 674. (a) 675. (a) 676. (a) 677. (b) 678. (c) 679. (c) 680. (a)
681. (a) 682. (d) 683. (a) 684. (a) 685. (d) 686. (a) 687. (a) 688. (d) 689. (b) 690. (a)
691. (b) 692. (d) 693. (b) 694. (c) 695. (c) 696. (b) 697. (c) 698. (c) 699. (c) 700. (a)
701. (d) 702. (d) 703. (c) 704. (a) 705. (d) 706. (b) 707. (d) 708. (d) 709. (a) 710. (c)
711. (d) 712. (a) 713. (c) 714. (c) 715. (a) 716. (b) 717. (c) 718. (c) 719. (c) 720. (a)
721. (b) 722. (d) 723. (d) 724. (c) 725. (d) 726. (a) 727. (b) 728. (a) 729. (b) 730. (d)
731. (d) 732. (d) 733. (b) 734. (d) 735. (b) 736. (c) 737. (d) 738. (d) 739. (c) 740. (c)
741. (d) 742. (d) 743. (d) 744. (c) 745. (c) 746. (b) 747. (a) 748. (a) 749. (a) 750. (b)
751. (b) 752. (c) 753. (d) 754. (d) 755. (a) 756. (d) 757. (c) 758. (b) 759. (d) 760. (d)
761. (d) 762. (a) 763. (c) 764. (d) 765. (a) 766. (d) 767. (d)
*HINTs
57. (a) I
59. (c) E =
kegâue Heäuekeäme = 4π× cd d2
= 4 × 3.14 × 60 I = 6 × 52
= 753.6 Lumen
= 150 cd
Electrical 50000 (MCQ) Volume II 551 YCT
05.
Fueskeäš^e@efvekeäme-I
(Electronics-I)
(a) the applied voltage/efoÙes ieÙes Jeesušspe
1. Deæ&Ûeeuekeâ Yeeweflekeâer leLee [eÙees[ (b) the temperature/leeheceeve
(Semi-Conductor Physics and Diode) (c) its current/Fmekeâer Oeeje
(d) the thermal voltage/Lece&ue Jeesušspe
1. Electronics is that branch of engineering which 6. The forbidden energy gap for germanium is?
deals with the application of- pecexefveÙece kesâ efueS Heâe@jefye[sve Tpee& Devleje@ue nw?
Fueskeäš^e@efvekeäme FbpeerefveÙeefjbie keâer Jen MeeKee nw, pees ……. (a) 0.3 eV (b) 3.5 eV
kesâ DevegØeÙeesie mes mebyebefOele nQ– (c) 0.72 eV (d) 1.1 eV
7. The bandgap of Silicon at room temperature is?
(a) Electron devices/Fueskeäš^e@ve GhekeâjCe keâcejs kesâ leeheceeve hej efmeefuekeâe@ve keâe yeQ[iewhe nw?
(b) production of electron components (a) 1.3 eV (b) 0.7 eV
Fueskeäš^e@ve IeškeâeW keâe Glheeove (c) 1.1 eV (d) 1.4 eV
(c) fission of uranium nuclei 8. Electron mobility is defined as?
ÙetjsefveÙece veeefYekeâ keâe efJeKeb[ve Fueskeäš^e@ve keâer ieefleMeeruelee keâes efkeâme ™he ceW heefjYeeef<ele
(d) generation of small power efkeâÙee ieÙee nw?
Úesšer Meefòeâ keâe Glheeove (a) Diffusion velocity per unit electric field
2. An electron device means the device in which Øeefle FkeâeF& efJeÅegle #es$e ceW DevegmejCe Jesie
the conduction of electrons takes place through (b) the movement of electrons/Fueskeäš^e@veeW keâer ieefle
Fueskeäš^e@ve GhekeâjCe keâe DeLe& Gme GhekeâjCe mes nw, efpemeceW (c) Drift velocity per unit field
Fueskeäš^e@veeW keâe Ûeeueve neslee nw– Øeefle FkeâeF& #es$e ceW ef[^Heäš Jesie
(a) a gas/Skeâ iewme (d) None of the above/FveceW mes keâesF& Yeer veneR
(b) vacuum/efveJee&le 9. In an intrinsic semiconductor:
(c) a semiconductor/Skeâ Deæ&Ûeeuekeâ Skeâ Fbefš^efvpekeâ Deæ&Ûeeuekeâ ceW–
(d) a gas, semiconductor or vacuum (a) there are not holes in the material
Skeâ iewme, Deæ&Ûeeuekeâ Ùee efveJee&le heoeLe& ceW nesume veneR neslee nw
(b) the number of holes is too small
3. In a semiconductor diode schematic symbol
arrow head represents
nesume keâer mebKÙee yengle keâce nw
Skeâ Deæ&Ûeeuekeâ [eÙees[ Ùeespeveeyeæ Øeleerkeâ ceW Ssjes ns[ (c) electrons in the material are neutralized by
holes/heoeLe& ceW Fueskeäš^e@vme keâes nesume Éeje Goemeerve
keâe ØeefleefveefOelJe keâjlee nw– efkeâÙee peelee nw
(a) N-type material/ N-šeFhe heoeLe& (d) there are not electrons in the material
(b) P-type material/ P-šeFhe heoeLe& heoeLe& ceW Fueskeäš^e@vme veneR neslee nQ
(c) both P and N-type materials. 10. When P-N junction is reverse biased?
P-šeFhe Deewj N-šeFhe oesveeW heoeLe& peye P-N pebkeäMeve efjJeme& yeeÙem[ nw?
(d) none of the above/GheÙeg&òeâ ceW mes keâesF& veneR (a) the width of depletion layer increases
4. An electrical breakdown of a P-N junction DeJe#eÙe hejle keâer ÛeewÌ[eF& yeÌ{ peeleer nw~
occurs if (b) a small current flows through it because of
Skeâ P-N pebkeäMeve keâe efJeÅegle yeÇskeâ[eGve neslee nw, Ùeefo– minority carriers/DeuhemebKÙekeâ Jeenkeâ kesâ keâejCe keâce
(a) forward voltage increases up to the rating. Oeeje ØeJeeefnle nesleer nw~
De«e Jeesušspe jsefšbie lekeâ yeÌ{ peeleer nw~ (c) it offers a very high resistance
(b) reverse voltage increase beyond the rating. Ùen yengle GÛÛe ØeeflejesOe Øeoeve keâjlee nw~
jsefšbie mes hejs He§e Jeesušspe yeÌ{lee nw~ (d) all of the above/Ghejesòeâ meYeer~
(c) forward voltage decreases below the rating. 11. Semiconductor Diode is used as?
De«e Jeesušspe jsefšbie kesâ veerÛes Iešlee nw~ Deæ&Ûeeuekeâ [eÙees[ keâe GheÙeesie efkeâmekesâ ™he ceW efkeâÙee
(d) reverse voltage decreases below the rating. peelee nw?
He§e Jeesušspe jsefšbie kesâ veerÛes Iešlee nw~ (a) an amplifier/Skeâ ØeJeOe&keâ
5. A P-N junction diode's dynamic conductance is
directly proportional to (b) a modulator/Skeâ cee@[guesšj
Skeâ P-N pebkeäMeve [eÙees[ kesâ [eÙevesefcekeâ keâv[keäšWme (c) a rectifier/Skeâ efo°keâejer
...........kesâ meerOes meceevegheeleer nw~ (d) an oscillator/Skeâ Dee@emf euesšj
Electrical 50000 (MCQ) Volume II 552 YCT
12. A semiconductor diode is? (c) holes in the valence band/mebÙeespeer yewC[ ceW nesume
Skeâ Deæ&Ûeeuekeâ [eÙees[ nw? (d) thermally-generated electron/leeheerÙe ™he mes
(a) a processing device/Skeâ Øeesmesefmebie Ùegefòeâ peefvele Fueskeäš^e@ve
(b) non-linear device/iewj-jsKeerÙe Ùegefòeâ 20. Conduction electrons have more mobility than
(c) linear device/jsKeerÙe Ùegefòeâ holes because they/Ûeeueve Fueskeäš^e@ve ceW nesume keâer
(d) bilateral device/yeeFuesšjue (efÉhe#eerÙe) Ùegefòeâ Dehes#ee DeefOekeâ ieefleMeeruelee nesleer nw keäÙeeWefkeâ Jes–––
13. When a P-N-junction is reverse biased/peye P-N (a) are lighter/nukesâ nesles nQ
meefvOe efjJeme& yee@Ùeme keâer peeleer nw, lees– (b) experience collisions less frequently/yeej-yeej
(a) holes and electrons move away from the škeâjeJe jefnle DevegYeJe keâjles nQ
junction/nesume Deewj Fueskeäš^e@ve meefvOe mes otj peeles nQ (c) have negative charge/GveceW $e+Ceelcekeâ DeeJesMe nesles
(b) holes and electrons move towards the nQ
junction/nesume Deewj Fueskeäš^e@ve meefvOe keâer Deesj peeles nQ (d) need less energy to move them/GvnW ieefle kesâ
(c) movement of holes and electrons seized/nesume efueS keâce Tpee& keâer DeeJeMÙekeâlee nesleer nw
Deewj Fueskeäš^e@ve keâer ieefle ™keâ peeleer nw 21. Doping materials are called impurities because
(d) depletion region decreases/DeJe#eÙe #es$e Ieš peelee they/[esefhebie heoeLe& DeMegefæÙeeB keânueeles nQ keäÙeeWefkeâ Jes–
nw (a) decrease the number of charge carriers/DeeJesMe
14. The total energy of a revolving electron in an Jeenkeâ keâer mebKÙee Iešeles nQ
atom can/efkeâmeer hejceeCeg ceW Ietceves Jeeues Fueskeäš^e@ve keâe (b) change the chemical properties of
kegâue Tpee&– semiconductors/Deæ&ÛeeuekeâeW keâe jemeeÙeefvekeâ iegCe
(a) have any value above zero/MetvÙe mes Thej keâesF& heefjJeefle&le keâjles nQ
ceeve nes mekeâlee nw (c) make semiconductors less than 100 percent
(b) never be positive/keâYeer Oeveelcekeâ veneR nes mekeâlee pure/Deæ&ÛeeuekeâeW keâes 100% mes keâce Megæ yeveeles nQ
(c) never be negative/keâYeer $e+Ceelcekeâ veneR nes mekeâlee (d) alter the crystal structures of the pure
(d) not be calculated/keâYeer ieCevee veneR keâer pee mekeâleer semiconductors/Deæ&ÛeeuekeâeW keâer ef›eâmšue mebjÛevee
15. An atom is said to be ionised when any one of keâes heefjJeefle&le keâjles nQ
its orbiting electron/keâesF& hejceeCeg DeeÙeveerke=âle keâne 22. Current flow in a semiconductor depends on
peelee nw, peye Fmekeâe keâ#eerÙe keâesF& Skeâ Fueskeäš^e@ve– the phenomenon of/efkeâmeer Deæ&Ûeeuekeâ ceW Oeeje keâe
(a) Jumps from one orbit to another/Skeâ keâ#e mes ØeJeen.........keâer Iešvee hej efveYe&j keâjlee nw
otmejs ceW ketâolee nw (a) drift/ef[^heäš
(b) is raised to a higher orbit/GÛÛe keâ#e ceW Ûeuee peelee (b) diffusion/efJemejCe
nw (c) recombination/hegve&mebÙeespeve
(c) comes to the ground state/«eeGC[ DeJemLee hej Dee (d) all of the above/Ghejeskeäle meYeer
peelee nw 23. Electon-hole pairs are produced by/Fueskeäš^e@ve
(d) is completely removed/hetCe&le: efvekeâue peeelee nw nesue Ùegice ...........Éeje Glhevve efkeâÙes peeles nQ–
16. The maximum number of electrons which the (a) recombination/hegve&mebÙeespeve
M-shell of an atom can contain is/Fueskeäš^e@ve keâer (b) thermal energy/leeheerÙe Tpee&
DeefOekeâlece mebKÙee efpemes efkeâmeer hejceeCeg keâe M-keâesMe (c) ionization/DeeÙeveerkeâjCe
jKe mekeâlee nw, nw– (d) doping/[esefhebie
(a) 32 (b) 8 24. Recombination takes place when/hegve&mebÙeespeve
(c) 18 (d) 50 mLeeve neslee nw peye–
17. Electronic distribution of an Si atom (a) an electron falls into a hole/Fueskeäš^e@ve nesue ceW
is/efmeefuekeâe@ve hejceeCeg keâe Fueskeäš^e@efvekeâ efJelejCe nw–
efiejlee nw
(a) 2, 10, 2 (b) 2, 8, 4
(c) 2, 7, 5 (d) 2, 4, 8 (b) a positive and a negative ion bond together/
18. Silicon has Z = 14. It outermost orbit Oeveelcekeâ Deewj $e+Ceelcekeâ Dee@Ùeve Skeâ meeLe yevOe yeveeles
is/efmeefuekeâe@ve ceW Z = 14 lees Fmekeâe yeendÙelece keâ#e nw– nQ
(a) partially filled/DebMele: Yeje ngDee (c) a valence electron becomes a
(b) half filled/DeeOee Yeje ngDee conduction/mebÙeespeer Fueskeäš^e@ve Ûeeueve nes peelee nw
(c) completely occupied/hetCe&le: Yeje ngDee (d) a crystal is formed/ef›eâmšue efveefce&le neslee nw
(d) empty/Keeueer 25. When a P-N junction is formed, diffusion
current causes/peye P-N meefvOe efveefce&le nesleer nw lees
19. Major part of the current in an intrinsic
semiconductor is due to/efkeâmeer Megæ Deæ&Ûeeuekeâ ceW efJemejCe Oeeje ............ GlheVe keâjleer nw~
Oeeje keâe cegKÙe Yeeie ............ kesâ keâejCe neslee nw~ (a) mixing of current carriers/OeejeJeenkeâes keâe efceßeCe
(a) conduction-band electrons (b) forward bias/De«e DeefYeveefle
Ûeeueve yewC[ Fueskeäš^e@vme (c) reverse bias/heMÛe DeefYeveefle
(b) valence-band electrons/mebÙeespeer yewC[ Fueskeäš^e@ve (d) barrier potential/efJeYeJe ØeeÛeerj
132. In the circuit shown below the average value of diodes. The value of current-I is :
v (t) will be: ef Û e$e ceW D1 Deew j D 2 DeeoMe& [eÙees [ ceevekeâj, Oeeje-I
0
veerÛes efoS ieS heefjheLe kesâ efueS v0(t) keâe Deewmele ceeve keâe ceeve nw–
nesiee–
(a) 5 (b) 20
(c) 10 (d) 100
*138. Assuming that the diodes in the given circuit
are ideal, the voltage V0 is :
efoÙes ieÙes heefjheLe ceW [eÙees[ keâes DeeoMe& ceevekeâj Jeesušspe
V0 nw–
S1
S2
Fig.
(a) Figure A/efÛe$e A (b) Figure B/efÛe$e B
(c) Figure C/efÛe$e C (d) Figure D/efÛe$e D
Fig.1.8 545. A full wave bridge rectifier is supplied voltage
(a) Figure A/efÛe$e A (b) Figure B/efÛe$e B at 50 Hz. The lowest ripple frequency will be:
(c) Figure C/efÛe$e C (d) Figure D/efÛe$e D Skeâ hetCe& lejbie efo°keâejer 50 Hz Jeesušspe hej mehueeF&
542. In a reverse biased P-N junction, the current
keâjlee nw, lees vÙetvelece Gefce&keâe DeeJe=efòe nesieer–
through the junction increases abruptly at: (a) 400 Hz (b) 200 Hz
(c) 100 Hz (d) 50 Hz
efkeâmeer efjJeme& yee@Ùeme P-N meefvOe ceW meefvOe mes ØeJeeefnle 546. For signal diodes the PIV rating is usually in
Oeeje ............ hej DeÛeevekeâ yeÌ{leer nw– the range :
(a) Zero Voltage/MetvÙe Jeesušspe ef meiveue [eÙees[ kesâ efueS PIV jsešf bie meeceevÙele: ...........
(b) 1.2 V/ kes â jsvpe ceW nesleer nw–
(a) 1 V to 10 V
(c) 0.72 V/
(b) 10 V to 30 V
(d) Breakdown voltage/yeÇskeâ[eGve Jeesušspe (c) 30 V to 150 V
543. The V-I characteristic of a semiconductor (d) 150 V to 400 V
diode is shown in Fig. From this figure it can be 547. fig. represents a:
concluded that: efÛe$e ØeoefMe&le keâjlee nw–
efkeâmeer Deæ&Ûeeuekeâ [eÙees[ keâe V-I DeefYeue#eCe efÛe$e ceW
ØeoefMe&le nw–efÛe$e mes Ùen efve<keâ<e& efvekeâeuee pee mekeâlee nw
efkeâ– (a) LED/Sue.F&.[er. (b) Varistor/Jewefjmšj
(c) SCR/Sme.meer.Deej. (d) Disc/ef[mkeâ
Electrical 50000 (MCQ) Volume II 600 YCT
548. Fig. represent a/efÛe$e ØeoefMe&le keâjlee nw– 554. Depletion region in a P-N junction diode
consists of:
P-N meefvOe [eÙees[ cebs DeJe#eÙe #es$e ceW Meeefceue nesles nQ–
(a) Mobile donor ions/ieefleMeerue oelee Dee@Ùeve
(a) Esaki diode/FMeekeâer [eÙees[
(b) Mobile acceptor ions/ieefleMeerue «eener Dee@Ùeve
(b) Triac/š^e@Ùekeâ (c) Mobile donor and acceptor ions
(c) Varactor/Jewjskeäšj ieefleMeerue oelee Deewj «eener Dee@Ùeve
(d) Gunn diode/ieve [eÙees[ (d) Majority carriers/yengmebKÙekeâ Jeenkeâ
549. Fig. represent a/efÛe$e ØeoefMe&le keâjlee nw– 555. When a diode is forward biased:
peye keâesF& [eÙees[ De«e DeefYeveefle efkeâÙee peelee nw, lees–
(a) Barrier potential increases
yewefjÙej efJeYeJe yeÌ{lee nw~
(a) Varactor/Jewjskeäšj (b) Barrier potential decreases
(b) LED/Sue.F&.[er yewefjÙej efJeYeJe Iešlee nw~
(c) Zener diode/peervej [eÙees[ (c) Majority current reduces
(d) Temperature dependent diode yengmebKÙekeâ Oeeje Iešleer nw~
leehe Deeefßele [eÙees[ (d) Minority current reduces
550. Fig. represent a/efÛe$e ØeoefMe&le keâjlee nw, Skeâ– DeuhemebKÙekeâ Oeeje Iešleer nw~
556. A potential difference is developed across a
current carrying metal strip when the strip is
(a) Tunnel diode/šveue [eÙees[ placed in a transverse magnetic field. the above
(b) P-NP transistor/ P-NP š^e@efpemšj effect is known as:
(c) Photo sensitive diode/heâesšes mesvmesefšJe [eÙees[ peye efmš^he keâes DevegØemLe ÛegcyekeâerÙe #es$e ceW mLeeefhele
(d) Photo emissive diode/heâesšes Glmepe&keâ [eÙees[ efkeâÙee peelee nw lees OeejeJeener Oeeleg efmš^he kesâ S›eâe@me
551. Fig. represent a: efJeYeJeevlej efJekeâefmele neslee nw~ Ghejeskeäle ØeYeeJe...........kesâ
efÛe$e ØeoefMe&le keâjlee nw, Skeâ ™he ceW peevee peelee nw–
(a) Fermi's effect/heâceea ØeYeeJe
(b) Photo electric effect/heâesšes JewÅegle ØeYeeJe
(a) Tunnel diode/šveue [eÙees[ (c) Joule's effect/petue ØeYeeJe
(b) Zener diode/peervej [eÙees[ (d) Hall's effect/ne@ue ØeYeeJe
(c) Photo emissive diode/heâesšes Glmepe&keâ [eÙees[ 557. As the temperature of a semi-conductor is
(d) Photo sensitive diode /heâesšes mesvmesefšJe [eÙees[ reduced to absolute zero/efkeâmeer Deæ&Ûeeuekeâ keâe
552. A semi-conductor that is electrically neutral: leeheceeve pewmes ner hetCe& MetvÙe lekeâ keâce keâj efoÙee peelee nw~
Skeâ Deæ&Ûeeuekeâ pees JewÅegle ™he mes Goemeerve neslee nw–
(a) has no majority carriers (a) all electrons become free/meYeer Fueskeäš^e@ve cegkeäle nes
yengmebKÙekeâ Jeenkeâ veneR nesles nQ~ peeles nQ~
(b) has no minority carriers (b) all electrons cease to move/meYeer Fueskeäš^e@ve ieefle
DeuhemebKÙekeâ Jeenkeâ veneR nesles nQ~ keâjves kesâ efueS mebIe<e& keâjles nQ
(c) has no free charge carriers (c) all valance electrons tend to remain in the
cegkeäle DeeJesMe veneR nesles nQ~ valance band/meYeer mebÙeespeer Fueskeäš^e@ve mebÙeespeer yewC[ ceW
(d) has equal amount of positive and negative
charges/meceeve cee$ee ceW Oeveelcekeâ Deewj $e+Ceelcekeâ yeves jnves kesâ efueS ØeJe=le nesles nQ
DeeJesMe nesles nQ~ (d) all valance electrons shift to forbidden
553. In case of selenium, under the influence of gap/meYeer mebÙeespeer Fueskeäš^e@ve Jeefpe&le Devlejeue keâer Deesj
varying light intensity: efMeheäš nes peeles nQ
mesuesefveÙece kesâ ceeceues ceW heefjJeleea ØekeâeMe leer›elee kesâ 558. The crystal structure of silicon is/efmeefuekeâe@ve keâer
ØeYeeJe kesâ lenle ef›eâmšue mebjÛevee nesleer nw–
(a) emf is generated due to chemical
reaction/jemeeÙeefvekeâ DeefYeef›eâÙee kesâ keâejCe F&.Sce.Sheâ. (a) Simple cubic/meeOeejCe Ieve
peefvele neslee nw~ (b) Body central cubic/yee@[er kesâvõerÙe Ieve
(b) emf is generated due to physical reaction (c) Face central cubic/hesâme kesâvõerÙe Ieve
Yeeweflekeâ ef›eâÙee kesâ keâejCe F&.Sce.Sheâ. peefvele nesslee nw~ (d) Diamond/nerje
(c) electrical conductivity change 559. A strong electric field across a P-N junction
JewÅegle Ûeeuekeâlee heefjJeefle&le nesleer nw~ that cause covalent bonds to break apart/efkeâmeer
(d) the number of electrons liberated varies P-N kesâ S›eâe@me cepeyetle JewÅegle #es$e pees menmebÙeespekeâ
cegkeäle ngÙes Fueskeäš^e@ve heefjJeefle&le nesles nQ~ yevOe keâes leesÌ[ves keâe keâejCe neslee nw–
Electrical 50000 (MCQ) Volume II 601 YCT
(a) It is called avalance breakdown/Ùen SJeueeBÛe (b) the amount of current across the P-N
Yebpeve keânueelee nw junction/P-N meefvOe kesâ S›eâe@me Oeeje keâer cee$ee
(b) It is called reverse breakdown/Ùen Gl›eâce Yebpeve (c) a dc voltage applied across the P-N junction
keânueelee nw to control its operation/P-N meefvOe kesâ S›eâe@me
(c) It is called Level breakdown/Ùen mlej Yebpeve Fmekesâ ØeÛeeueve keâes efveÙeefv$ele keâjves kesâ efueS ØeÙegkeäle
keânueelee nw [er.meer. Jeesušspe
(d) none of the above/Ghejesòeâ ceW mes keâesF& veneR
(d) It is called Low voltage breakdown/Ùen efvecve
564. The forward-bias a P-N junction, diode/De«e
Jeesušspe Yebpeve keânueelee nw
560. If an intrinsic semiconductor is doped with a
DeefYeveefle P-N meefvOe, [eÙees[–
very small amount of boron, then in the (a) an external voltage is applied that is positive
extrinsic semiconductor so formed, the number at the anode and negative at the cathode/Skeâ
of electrons and holes will,/Ùeefo keâesF& Megæ yee¢e Jeesušspe ØeÙegkeäle keâer peeleer nw pees Svees[ hej
Deæ&Ûeeuekeâ cebs yeesje@ve keâer LeesÌ[er meer cee$ee kesâ Éeje [esh[ Oeveelcekeâ Deewj kewâLees[ hej $e+Ceelcekeâ neslee nw
efkeâÙee peelee nw, leye Fme Øekeâej efveefce&le yeendÙe (b) an external voltage is applied that is negative
at the anode and positive at the cathode/Skeâ
Deæ&Ûeeuekeâ ceW Fueskeäš^e@ve Deewj nesume keâer mebKÙee– yee¢e Jeesušspe ØeÙegkeäle keâer peeleer nw pees Svees[ hej
(a) decrease/Iešsieer
$e+Ceelcekeâ Deewj kewâLees[ hej Oeveelcekeâ nesleer nw
(b) increase and decrease respectively/›eâceMe: (c) an external voltage is applied that is positive
yeÌ{sieer Deewj Iešsieer at the P-region and negative at the N-
(c) increase/yeÌ{sieer region/Skeâ yee¢e Jeesušspe ØeÙegkeäle keâer peeleer nw pees P-
(d) decrease and increase respectively/›eâceMe: #es$e hej Oeveelcekeâ Deewj N- #es$e hej $e+Ceelcekeâ nesleer nw
Iešsieer Deewj yeÌ{sieer (d) a and c above/Ghejeskeäle (a) Deewj (c)
561. Hall effect is observed in a specimen when it 565. When a P-N junction is forward-biased/peye
(metal or a semiconductor) is carrying current Skeâ P-N meefvOe De«e DeefYeveefle keâer peeleer nw, lees–
and is placed in a magnetic field. The resultant (a) the only current is the hole current/Oeeje kesâJeue
electric field inside the specimen will be
in/efkeâmeer vecetves ceW ne@ue ØeYeeJe osKee peelee nw, peye Ùen nesue Oeeje nesleer nw
(b) the only current is the electron current/Oeeje
(Oeeleg Ùee Deæ&Ûeeuekeâ) Oeeje Jenve keâj jne nes Deewj
kesâJeue Fueskeäš^e@ve Oeeje nesleer nw
efkeâmeer ÛegcyekeâerÙe #es$e ceW mLeeefhele efkeâÙee peelee nw, lees (c) the only current is produced by majority
vecetves kesâ Devoj heefjCeeceer JewÅegle #es$e ............ceW nesiee~ carriers/Oeeje kesâJeue yengmebKÙekeâ JeenkeâeW Éeje Glhevve
(a) a direction normal to both current and nesleer nw
magnetic field/Oeeje Deewj ÛegcyekeâerÙe #es$e oesveeW kesâ (d) the current is produced by both holes and
efueS meeceevÙe efoMee electrons/Oeeje nesume Deewj Fueskeäš^e@vme oesveeW Éeje
(b) the direction of current/Oeeje keâer efoMee Glhevve nesleer nw
(c) a direction anti-parallel to both current and 566. A P-N junction diode's dynamic conductance is
magnetic field/ÛegcyekeâerÙe #es$e Deewj Oeeje kesâ efJeheefjle directly proportional to/efkeâmeer P-N meefvOe [eÙees[
meceevlej efoMee keâer ieeflekeâ ÛeeuekeâlJe........... kesâ meceevegheeleer nesleer nw~
(d) a arbitrary direction depending upon the (a) the applied voltage/ØeÙegkeäle Jeesušspe
conductivity of the specimen/vecetves kesâ Ûeeuekeâlee (b) the temperature/leeheceeve
hej efveYe&j keâjles ngS Skeâhe#eerÙe efoMee (c) the current/Oeeje
562. For a silicon diode, the value of the forward (d) the thermal voltate/leeheerÙe Jeesušspe
bias voltage typically/efkeâmeer efmeefuekeâe@ve [eÙees[ kesâ 567. Reverse current in a silicon junction nearly
efueS De«e DeefYeveefle Jeesušspe keâe ceeve efJeefMe°le: doubles for every.........0C rise in temperature.
(a) must be greater than 0.3 V/0.3 V mes DeefOekeâ efmeefuekeâe@ve meefvOe ceW efjJeme& Oeeje ØelÙeskeâ .............. 0C
nesvee ÛeeefnS leeheceeve Je=efæ kesâ efueS ueieYeie oes iegvee nes peeleer nw–
(b) must be greater than 0.7 V/0.7 V mes DeefOekeâ (a) 10 (b) 2
(c) 6 (d) 5
nesvee ÛeeefnS 568. The primary function of a clamper circuit is
(c) depend on the width of the depletion to/efkeâmeer keäuewchej heefjheLe keâe ØecegKe keâeÙe& ........... kesâ
region/DeJe#eÙe #es$e keâer ÛeewÌ[eF& hej efveYe&j keâjlee nw efueS neslee nw~
(d) depend on the concentration of majority (a) suppress variations in signal voltage/efmeiveue
carriers/yengmebKÙekeâ Jeenkeâ keâer meevõlee hej efveYe&j keâjlee Jeesušspe ceW heefjJele&ve keâes meceehle keâjves
nw (b) raise positive half-cycle of the signal/efmeiveue
563. The term bias means/šce& yee@Ùeme keâe DeLe& neslee nw– kesâ Oeveelcekeâ Deæ&Ûe›eâ keâes efJekeâefmele keâjves
(a) the ratio of majority carriers to minority (c) lower negative half-cycle of the signal/efmeiveue
carriers/yengmebKÙekeâ Jeenkeâ Deewj DeuhemebKÙekeâ Jeenkeâ kesâ $e+Ceelcekeâ Deæ&Ûe›eâ keâes efvecve keâjves
keâe Devegheele (d) introduce a dc level into an ac signal/S.meer.
efmeiveue ceW [er.meer. mlej ØeJesMe keâjves
Electrical 50000 (MCQ) Volume II 602 YCT
569. For an input VS = 5sint (assuming ideal diode), 3 3
the circuit shown in Fig. will be behave as (a) 2 × 1016 / cm (b) 1 × 1016 / cm
a/Fvehegš VS = 5 sin t (DeeoMe& [eÙees[ ceeveles ngÙes) kesâ 3 3
(c) 2.5 × 1015 / cm (d) 2.5 × 1015 / cm
efueS efÛe$e ceW ØeoefMe&le heefjheLe .......... kesâ ™he ceW *572. A silicon P-N junction at a temperature of 200C
JÙeJenej keâjsiee~ has a reverse saturation current of 10 pico-
(a) clipper, sine wave clipped at – 2V/efkeäuehej, – Amperes (pA). The reverse saturation current
2V hej efkeäueh[ pÙee lejbie at 400C for the same bias is
(b) clamper, sine wave clamped at – 2V/ keäuewchej, approximately/200C leeheceeve hej efkeâmeer efmeefuekeâe@ve
– 2V hej keäuewch[ pÙee lejbie P-N meefvOe keâer Gl›eâce meble=hle Oeeje 10 efhekeâes SefcheÙej
(c) clamper, sine wave clamped at zero volt/ (pA) nw~ lees Gmeer yee@Ùeme kesâ efueS 400C hej Gl›eâce
keäuewchej, 0V hej keäuewch[ pÙee lejbie meble=hle Oeeje ueieYeie ............ nw~
(d) clipped, sine wave clipped at 2V/ efkeäueh[, 2V (a) 30 pA (b) 40 pA
hej efkeäueh[ meeFve lejbie (c) 50 pA (d) 60 pA
573. The primary reason for the widespread use of
silicon in semiconductor device technology
is/Deæ&Ûeeeuekeâ Ùegefkeäle lekeâveerkeâer ceW efmeefuekeâe@ve keâe
JÙeehekeâ ™he mes GheÙeesie nesves keâe ØecegKe keâejCe nw–
(a) abundance of silicon on the surface of the
Earth./he=LJeer keâer melen hej efmeefuekeâe@ve keâer ØeÛegjcee$ee
(b) large bandgap of silicon in comparison to
570. A clipping circuit is shown in Fig. Its transfer Germanium./pecexefveÙece kesâ leguevee ceW efmeefuekeâe@ve keâe
characteristic will be/efÛe$e ceW efkeäueefhebie heefjheLe yeÌ[e yewC[ iewhe
ØeoefMe&le efkeâÙee ieÙee nw~ Fmekeâe š^ebmeheâj DeefYeue#eCe (c) favorable properties of silicon-dioxide (sio2)./
nesiee– (sio2) keâer Devegketâue efJeMes<eleSB
(d) lower melting point./efvecve ieueveeBkeâ
574. A Silicon sample A is doped with 1018
atoms/cm3 of Boron. Another sample B of
identical dimensions is doped with 1018
atoms/cm3 of Phosphorus. The ratio of electron
to hole mobility is 3. The ratio of conductivity
of the sample A to B is/Skeâ efmeefuekeâe@ve vecetvee A,
yeesje@ve kesâ 1018 hejceeCeg/cm3 kesâ meeLe [esh[ efkeâÙee peelee
nw~ meeceevÙe Deekeâj keâe Skeâ DevÙe vecetvee B heâemheâesjme
kesâ 1018 hejceeCeg/cm3 kesâ meeLe [eshe efkeâÙee peelee nw~
Fueskeäš^e@ve Deewj nesue keâer ieefleMeerue keâe Devegheele 3 nw lees
vecetvee A Deewj B kesâ Ûeeuekeâlee keâe Devegheele nw~
(a) 3 (b) 1
3
(c) 2 (d) 3
3 2
575. The concentration of minority carriers in an
extrinsic semiconductor under equilibrium
is/meecÙeeJemLee kesâ Devleie&le efkeâmeer yee¢e Deæ&Ûeeuekeâ ceW
DeuhemebKÙekeâ JeenkeâeW keâer meevõlee nesleer nw–
(a) directly proportional to the doping
concentration/[esefhebie meevõlee kesâ meerOes meceevegheeleer
(b) inversely proportional to the doping
concentration/[esefhebie meevõlee kesâ JÙegl›eâceevegheeleer
(c) directly proportional to the intrinsic
*571. The resistivity of a uniformly doped n-type concentration/Fefvš^befpekeâ meevõlee kesâ meerOes meceevegheeleer
silicon sample is 0.5 Ω-cm. If the electron (d) inversely proportional to the intrinsic
mobility (µn) is 1250 cm2/V-sec and the charge concentration/Fefvš^efpekeâ meevõlee kesâ JÙegl›eâceevegheeleer
of an electron is 1.6 × 10–19 Coulomb, the donor
impurity concentration (ND) in the sample 576. Which of the following device has
is./Skeâ meceeve ™he mes [esh[ n Øekeâej efmeefuekeâe@ve vecetvee characteristics closed to that of an ideal current
keâer ØeeflejesOelee 0.5 Ω-cm nw, Ùeefo Fueskeäš^e@ve source?/efvecve ceW mes efkeâme Ùegefkeäle keâe DeefYeue#eCe Skeâ
ieefleMeeruelee (µn) is 1250 cm2/V-sec nw Deewj Fueskeäš^e@ve DeeoMe& Oeeje m$eesle kesâ keâjerye neslee nw?
keâe DeeJesMe 1.6 × 10–19 nw lees vecetves ceW oelee DeMegefæ (a) Gas diode/iewme [eÙees[
meevõlee (ND) nw– (b) Crystal diode/ef›eâmšue [eÙees[
Electrical 50000 (MCQ) Volume II 603 YCT
(c) Transistor in CB mode/ CB cees[ ceW š^eBefpemšj efkeâmeer Meefkeäle Deehetefle& ceW Skeâ ueIegheefLele Fvehegš mebOeeefj$e
(d) All of the above/Ghejeskeäle meYeer keâe .............. heefjCeece keâjeves keâer mebYeeJevee jnleer nw?
577. Which of the following material is used for (a) Excessive hum/DelÙeefOekeâ YeveYeveenš~
infra-red LED's? (b) Reduced voltage output/efvecve Jeesušlee DeeGšhegš~
efvecve ceW mes keâewve mee heoeLe& DeJejkeäle LED's ceW ØeÙegkeäle (c) No voltage output/keâesF& Jeesušlee DeeGšhegš veneR~
efkeâÙee peelee nw? (d) None of above/Ghejeskeäle ceW mes keâesF& veneR~
(a) Gallium arsenide/iewefueÙece DeemexveeF[ 585. The circuit shown in Fig. 2.1 is of:
(b) Calcium phosphide/kewâefumeÙece heâemheâeF[ efÛe$e ceW ØeoefMe&le heefjheLe ............... keâe nw–
(c) Silicon/meerefuekeâe@ve
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR
578. A Zener diode :
Skeâ peervej [eÙees[–
(a) Has a high forward-voltage rating
GÛÛe De«e Jeesušlee jsefšbie nesleer nw~
(b) Has a sharp breakdown at low reverse
voltage/efvecve he§e Jeesušlee hej leer›e Yebpeve neslee nw~
(c) Is useful as an amplifier
ØeJeOe&keâ kesâ ™he ceW GheÙeesieer neslee nw~ (a) Bridge rectifier/mesleg efo°keâejer~
(d) Has a negative resistane (b) Low frequency oscillator/efvecve DeeJe=eòf e oesefue$e~
$e+Ceelcekeâ ØeeflejesOe neslee nw~ (c) Half wave voltage doubler
579. LEDs normally work on a voltage of? Deæ& lejbie Jeesušlee [yeuej~
LEDs meeceevÙele: efkeâme Jeesušlee hej keâeÙe& keâjlee nw? (d) Full wave voltage doubler
(a) 1 to 2 V/1 mes 2 V hetCe& lejbie Jeesušlee [yeuej~
(b) 10 to 20 V/10 mes 20 V 586. Heaters for vacuum tubes normally take a
(c) 50 to 60 V/50 mes 60 V voltage of:
(d) 100 to 250 V/100 mes 250 V
efveJee&led šdÙetye kesâ efueS leehekeâ meeceevÙele: ............
580. The power consumption of LEDs may be of the Jees ušlee ueslee nw–
order of: (a) 1V (b) 2.3 V
LEDs keâer Meefkeäle Kehele............... keâer keâesefš keâer nes (c) 6.3 V (d) 220 V
*587. A power supply with a D.C. output of 140 V
mekeâleer nw– has a 60 Hz ripple of 1.4 V. What is the
(a) 5 to 10 nano amperes/5 mes 10 vewvees ScheerÙeme&~ percentage ripple?
(b) 5 to 10 micro amperes /5 mes 10 ceeF›eâes ScheerÙeme&~ 140 V D.C. DeeGšhegš kesâ meeLe Skeâ Deehetefle& ceW 1.4 V
(c) 5 to 10 milliamperes/5 mes 10 efceueer ScheerÙeme&~ efjheue keâe 60 Hz nw~ ØeefleMele efjheue keäÙee nw?
(d) 5 to 10 amperes/5 mes 10 ScheerÙeme&~ (a) 0.1% (b) 0.14%
581. LED's do not require: (c) 1% (d) 2.4%
LED's ceW .............. keâer DeeJeMÙekeâlee veneR nesleer nw– 588. P-N-junction is heavily doped in case of :
(a) Heating/leeheve .......... kesâ ceeceues ceW P-N- meefvOe GÛÛe [esh[ nesleer nw–
(b) Warm up time /Jeece&-Dehe meceÙe (a) PIN diodes/PIN [eÙees[
(c) Both (a) and (b) above/Ghejeskeäle (a) Deewj (b) oesveeW (b) Tunnel diodes/šveue [eÙees[
(d) None of the above/Ghejeskeäle ceW mes keâesF& veneR (c) Gun diodes/ieve [eÙees[
582. A tunnel diode is used for : (d) All of the above/Ghejeskeäle meYeer
Skeâ šveue [eÙees[........kesâ efueS ØeÙegkeäle efkeâÙee peelee nw– 589. The internal voltage drop in case of vacuum
tube diode is of the order of :
(a) Very low frequencies/yengle efvecve DeeJe=efòeÙeeW efveJee&le šdÙetye [eÙees[ kesâ ceeceues ceW Deevleefjkeâ Jeesušlee
(b) 50 Hz/50 nš&pe [^ehe .............. keâer keâesefš keâe neslee nw–
(c) HF/GÛÛe DeeJe=efòe (a) 1 to 2 volts/1 mes 2 volts
(d) Microwave frequencies/met#ce lejbie DeeJe=efòe (b) 2 to 5 volts /2 mes 5 volts
583. Which of the following uses two junction of (c) 5 to 10 volts/5 mes 10 volts
opposite polarities? (d) 15 to 20 volts/15 mes 20 volts
efvecve ceW mes keâewve efJehejerle OeÇgJelee kesâ oes mebefOeÙeeW keâe 590. The internal voltage drop in case of silicon
GheÙeesie keâjlee nw? diodes is around:
(a) Tunnel diode /šveue [eÙees[ ef meefuekeâe@ve [Ùees[ kesâ ceeceues ceW Deevleefjkeâ Jeesušlee [^ehe
............... keâer keâesefš keâe neslee nw–
(b) Zener diode /peervej [eÙees[
(a) 1 to 2 volts/1 mes 2 Jeesušdme
(c) Varactor diode/Jewjskeäšj [eÙees[
(b) 2 to 5 volts /2 mes 5 Jeesušdme
(d) None of above/Ghejeskeäle ceW mes keâesF& veneR
584. In a power supply a shorted input capacitor is (c) 5 to 10 volts/5 mes 10 Jeesušdme
likely to result in? (d) 10 to 20 volts/10 mes 20 Jeesušdme
Electrical 50000 (MCQ) Volume II 604 YCT
591. A semi-conductor diode when tested with ohm- *597. The D.C. output voltage drops from 48 V
meter gives low value of R in both directions, with no load to 46 V at full load. The
therefore it can be concluded that: percentage load regulation is :
Skeâ Deæ&Ûeeuekeâ [eÙees[ peye Deesceceeršj kesâ meeLe peeBÛe MetvÙe Yeej mes hetCe& Yeej hej [er.meer. efveie&le Jeesušlee heele
efkeâÙee peelee nw lees oesveeW efoMeeDeeW ceW R keâe efvecve ceeve 48 V mes 46 V nw~ ØeefleMele Yeej efveÙeceve nw–
oslee nw, FmeefueS Ùen efve<keâ<e& efvekeâeuee pee mekeâlee nw (a) 1.05% (b) 2.1%
efkeâ– (c) 4.34% (d) 8.4%
598. Excessive hum in a power supply could be due
(a) The diode is shorted/[eÙees[ ueIegheefLele nw~
to:
(b) The diode is open/[eÙees[ Keguee nw~ efkeâmeer Meefkeäle Deehetefle& ceW DelÙeefOekeâ YeveYeveenš
(c) The diode is satisfactory/[eÙees[ meblees<epevekeâ nw~ .............. kesâ keâejCe nes mekeâlee nw~
(d) Nothing can be concluded on the basis of
(a) Open filter choke/Keguee efheâušj Ûeeskeâ
information provided/Øeoeve keâer ieF& metÛevee kesâ
(b) Capacitor/kewâhesefmešj
DeeOeej hej kegâÚ Yeer efve<keâ<e& veneR efvekeâeuee pee mekeâlee nw~
592. The depletion or space-charge region in a (c) Defective rectifier/DeØeYeeJeer efo°keâejer
junction diode contains charges that are: (d) Any of the above/Ghejeskeäle ceW mes keâesF&
efkeâmeer mebefOe [eÙees[ ceW DeJe#eÙe #es$e Ùee mhesme DeeJesMe *599. The rms ripple voltage is 20 mV for a 15 V dc
#es$e ceW DeeJesMe nesles nQ pees– output. the percentage ripple factor will be:
15 V dc DeeGšhegš kesâ efueS rms efjheue Jeesušlee 20
(a) Mostly majority carriers
DeefOekeâlej yengmebKÙekeâ Jeenkeâ~ mV nw~ ØeefleMele Gefce&keâe Ieškeâ nesiee–
(b) Mostly minority carriers (a) 0.013% (b) 0.066%
DeefOekeâlej DeuhemebKÙekeâ Jeenkeâ~ (c) 0.13% (d) 1.3%
*600. The dc output voltage is 40 V at full load and
(c) Mobile donor and acceptor ions 41 V without any load current. The load
ieefleMeerue oelee Deewj «eener DeeÙeve~ regulation is:
(d) Fixed donor and acceptor ions dc DeeGšhegš Jeesušlee hetCe& Yeej hej 40 V nw Deewj efyevee
efmLej oelee Deewj «eener DeeÙeve~ efkeâmeer Yeej Oeeje kesâ 41 Jeesuš nw~ Yeej efveÙeceve nw–
593. As compared to mercury arc rectifiers, metal
rectifiers: (a) 0.24% (b) 0.48%
(c) 0.96% (d) 2.5%
cejkeâjer Dee@ke&â efo°keâejer keâer leguevee ceW Oeeleg efo°keâejer 601. On applying reverse bias to a P-N junction
nw– diode, it:
(a) Can operate at high loads P-N meefvOe [eÙees[ hej he§e yeeÙeme ØeÙegkeäle keâjves hej,
GÛÛe Yeej hej ØeÛeeefuele nes mekeâles nQ~ Ùen–
(b) Can operate at high voltages (a) Lowers the potential barrier
GÛÛe Jeesušlee hej ØeÛeeefuele nes mekeâles nQ~ efJeYeJe JewefjÙej keâes keâce keâjlee nw~
(c) can operate on low temperature (b) Raises the potential barrier
efvecve leeheceeve hej ØeÛeeefuele nes mekeâles nQ~ efJeYeJe JewefjÙej keâes yeÌ{elee nw~
(d) Give poor regulation/Kejeye efveÙeceve oslee nw~
(c) Greatly increases the minority-carrier current
594. A full wave rectified sine wave is clipped such
that the effective value is 0.5 ym. The amplitude DeuhemebKÙekeâ Jeenkeâ Oeeje yengle pÙeeoe yeÌ{ peeleer nw~
at which the waveform is clipped will be (d) Greatly increases the majority-carrier current
keâesF& hetCe& lejbie efo°keâeefjle pÙee Je›eâ Fme Øekeâej keâešer yengmebKÙekeâ Jeenkeâ Oeeje yengle pÙeeoe yeÌ{ peeleer nw~
peeleer nw, efkeâ ØeYeeJeer ceeve 0.5 ym nes~ efpeme hej lejbie 602. For the function y(t) = ym sin ωt, the average
™he keâeše ieÙee nes hej DeeÙeece keäÙee nesiee? value will be:
(a) 0.381 Ym (b) 0.481 Ym heâueve y(t) = ym sin ωt kesâ efueS Dewmele ceeve nesiee–
(c) 5.581 Ym (d) 0.681 Ym y
*595. It the effective value of half-wave rectified sine (a) Zero (b) m
wave is 20. The average value of the wave will 2
be/Ùeefo Deæ& lejbie efo°keâeefjle pÙee lejbie keâe ØeYeeJeer ym
(c) (d) 2y m
ceeve 20 nes, lees lejbie keâe Deewmele ceeve nesiee– 2
(a) 27.7 (b) 23.3 *603. When y m is the peak value, the average value of
(c) 18.8 (d) 12.7 the half wave rectified sine wave will be:
*596. A voltage function is given by v(t) = 100 + 25 peye ym efMeKej ceeve nes, lees Deæ& lejbie efo°keâeefjle pÙee
sin 3 ωt + 10 sin 5 ωt volts The RMS value will lejbie keâe Deewmele ceeve nesiee–
be: (a) 0.87 ym (b) 0.717 ym
Jeesušlee heâueve v(t) = 100 + 25 sin 3 ωt + 10 sin 5 (c) 0.5 ym (d) 0.318 ym
ωt Jeesuš kesâ Éeje efoÙee ieÙee nw~ RMS ceeve keäÙee *604. In the above case the rms value will be:
nesiee? Ghejeskeäle efmLeefle ceW rms ceeve nesiee–
(a) 59.9 V (b) 68.9 V (a) 0.87 ym (b) 0.717 ym
(c) 90.8 V (d) 101.8 V (c) 0.5 ym (d) 0.318 ym
~
725. Group I lists four types of p-n junction diodes.
Match each device in Group I with one of the
options in Group II to indicate the bias
condition of that device in its normal mode of
operation :
mecetn-I, 4 Øekeâej kesâ p-n mebefOe [eÙees[ keâes metefÛeyeæ
keâjlee nw~ mecetn-II ceW ØelÙeskeâ Ùegefkeäle keâes mecetn-I ceW
efJekeâuheeW ceW mes Skeâ kesâ meeLe megcesefuele keâjW leeefkeâ
ØeÛeeueve kesâ meeceevÙe cees[ ceW Fme Ùegefkeäle keâer yeeÙeme
efmLeefle keâe mebkesâle efceue mekesâ–
Group I Group 2
p. Zener diode 1. Forward bias
peervej [eÙees[ De«e yeeÙeme
Q. Solar cell 2. Reverse bias
meewj mesue he§e yeeÙeme
R. LASER diode
uespej [eÙees[
S. Avalanche photo diode
723. In a p+ n junction diode under reverse bias, the SJeueeBÛes heâesšes [eÙees[
magnitude of electric field is maximum at: (a) P -1, Q - 2, R - 1, S - 2
(b) P -2, Q - 1, R - 1, S - 2
Gl›eâce yeeÙeme kesâ lenle efkeâmeer p+ n meefvOe ceW JewÅegle #es$e
(c) P -2, Q - 2, R - 1, S - 1
keâe heefjceeCe................ hej DeefOekeâlece neslee nw– (d) P -2, Q - 1, R - 2, S - 2
(a) The edge of the depletion region on the p- *726. For the zener diode shown in the figure the
zener voltage at knee is 7V, the knee current is
side/ p-he#e hej DeJe#eÙe #es$e kesâ efkeâveejs~ negligible and the zener dynamic resistance is
(b) The edge of the depletion region on the n-side 10 Ω. If the input voltage (Vi) range is from 10
n-he#e hej DeJe#eÙe #es$e kesâ efkeâveejs~ V to 16 V, the output voltage (V0) range from:
(c) The p+ n junction efÛe$e ceW ØeoefMe&le peervej [eÙees[ kesâ efueS veer (knee) hej
p+ n he#e hej DeJe#eÙe #es$e kesâ efkeâveejs~ peervej Jeesušlee 7 V nw, veer Oeeje veieCÙe nw Deewj peervej
(d) The centre of the depletion region on the n- keâe ieeflekeâ ØeeflejesOe 10 Ω nw~ Ùeefo Fvehegš Jeesušlee (Vi)
side/n -he#e hej DeJe#eÙe #es$e kesâ kesâvõ~ hejeme 10 V mes 16 V nw, lees DeeGšhegš Jeesušlee (V0)
724. The correct full wave rectifier circuit is : hejeme ............ mes nw–
hetCe& lejbie efo°keâejer kesâ mener heefjheLe nw–
b
(a) 7.00 to 7.29 V/7.00 mes 7.29 V
(b) 7.14 to 7.29 V/7.14 mes 7.29 V
(c) 7.14 to 7.43 V/7.14 mes 7.43 V
(d) 7.29 to 7.43 V/7.29 mes 7.43 V
Electrical 50000 (MCQ) Volume II 616 YCT
2. yeeF&-heesuej š^ebefpemšj leLee ScheueerHeâe@Ùej 734. In the CE configuration, the collector
characteristics is used to find:
(Bi-Polar Transistor and Amplifier) CE efJevÙeeme ceW, meb«eenkeâ DeefYeue#eCe keäÙee Øeehle keâjves
kesâ efueS ØeÙegòeâ efkeâÙee peelee nw?
727. Base region of a Transistor is of : (a) base current/DeeOeej Oeeje
š^eBefpemšj keâe DeeOeej #es$e ............... Jeeuee neslee nw– (b) input current/Fvehegš Oeeje
(a) Low thickness and highly doped (c) output resistance/DeeGšhegš ØeeflejesOe
efvecve ceesšeF& Deewj GÛÛe [esh[ (d) gain/ueeYe
(b) Low thickness and lightly doped 735. A BJT amplifier operates in the ........ region:
efvecve ceesšeF& Deewj efvecve [esh[ Skeâ BJT ØeJeOe&keâ ......... #es$e ceW mebÛeeefuele neslee nw–
(c) High thickness and lightly doped
(a) active/SefkeäšJe
GÛÛe ceesšeF& Deewj efvecve [esh[
(d) High thickness and highly doped (b) cut off/keâš-Dee@heâ
GÛÛe ceesšeF& Deewj GÛÛe [esh[ (c) saturation/meble=hle
728. Common collector configuration is popularly (d) none of these/FveceW mes keâesF& veneR
used as: 736. The collector current of a Transistor is always:
keâeceve keâueskeäšj efJevÙeeme .......... kesâ ™he ceW efkeâmeer š^eBefpemšj keâer meb«eenkeâ Oeeje meowJe nesleer nw–
ueeskeâefØeÙelee mes GheÙeesie efkeâÙee peelee nw– (a) less than emitter current/Glmepe&keâ Oeeje mes keâce~
(a) switch / efmJeÛe (b) equal to the emitter current
(b) voltage amplifier / Jeesušlee ØeJeOe&keâ Glmepe&keâ Oeeje kesâ yejeyej~
(c) buffer/ yeheâj (c) greater than the emitter current
(d) current amplifier/ Oeeje ØeJeOe&keâ
Glmepe&keâ Oeeje mes DeefOekeâ~
(d) none of the above/Ghejesòeâ ceW mes keâesF& veneR~
729. If a change in the base current doesn't change
the collector current, the Transistor amplifier 737. In CE amplifier I/P and O/P signals are:
is CE ØeJeOe&keâ ceW Fvehegš Deewj DeeGšhegš efmeiveue nesles nQ–
Ùeefo DeeOeej Oeeje ceW heefjJele&ve keâjves mes meb«eenkeâ Oeeje (a) 120o out of phase / 120o keâueeblej hej~
heefjJele&ve veneR neslee nw, lees š^eBefpemšj ØeJeOe&keâ neslee nw– (b) 180o out of phase / 180o keâueeblej hej~
(a) saturated / meble=hle (b) cut off / keâš Dee@heâ (c) in phase/ keâuee ceW~
(c) critical/ ›eâebeflekeâ (d) active/ meef›eâÙe (d) 90o out of phase/ 90o keâueeblej hej~
730. In a BJT, largest current flow occurs in the: 738. Voltage gain with load is about ....... for CE
BJT ceW DelÙeefOekeâ Oeeje keâe ØeJeen ....... ceW neslee nw– configuration:
CE efJevÙeeme kesâ efueS uees[ kesâ meeLe Jeesušlee ueeYe
(a) emitter / Glmepe&keâ (b) collector / meb«eenkeâ
(c) base/ DeeOeej (d) junction/ mebefOe ueieYeie neslee nw–
731. Improper biasing of the Transistor circuit (a) 1 (b) 150
leads to: (c) 500 (d) 200
š^eBefpemšj heefjheLe keâer DevegefÛele yeeÙeefmebie ......... keâe 739. The voltage gain of an emitter follower is
always:
vesle=lJe keâjleer nw– Sceeršj heâe@ueesDej keâe Jeesušlee ueeYe meowJe neslee nw–
(a) excessive heat / DelÙeefOekeâ T<cee (a) 1
(b) heavy loading / Yeejer ueesef[bie (b) more than 1 / 1 mes DeefOekeâ
(c) distortion in the output/ DeeGšhegš ceW efJe™heCe (c) less than 1/ 1 mes keâce
(d) fault/ oes<e (d) greater than or equal to 1/1 mes yeÌ[e Ùee yejeyej
732. A power output stage generally uses the 740. In BC 148 Transistor 'B' stands for:
configuration BC 148 š^eBefpemšj ceW B keâe leelheÙe& nw–
Meefòeâ DeeGšhegš ÛejCe meeceevÙe ™he mes ....... efJevÙeeme (a) Germanium / pecexefveÙece
keâe GheÙeesie keâjlee nw~ (b) Gallium arsenide / iewueerÙece DeemexveeF[
(a) common emitter / keâe@ceve Glmepe&keâ (c) Cadmium Sulphide/ kesâef[efceÙece meuheâeF[
(b) common collector / keâe@ceve meb«eenkeâ (d) Silicon/ efmeefuekeâe@ve
(c) common base/ keâe@ceve DeeOeej 741. Power rating of low power Transistor are:
(d) common source/ keâe@ceve œeesle efvecve Meefòeâ Jeeues š^eBefpemšj keâer Meefòeâ jsefšbie nesleer nw–
733. In a Transistor, higher current gain is obtained (a) up to 10 watts / 10 Jee@š lekeâ
by: (b) up to 20 watts / 20 Jee@š lekeâ
Skeâ š^eBefpemšj ceW .......... Éeje GÛÛe Oeeje ueeYe Øeehle
(c) less than 2 watts/ 2 Jee@š mes keâce
neslee nw~ (d) up to 15 watts/ 15 Jee@š lekeâ
(a) low base doping / efvecve Oeeje [esefhebie 742. When a BJT operates in cut off:
(b) small emitter doping / keâce Fceeršj [esefhebie peye Skeâ BJT keâš-Dee@heâ ceW ØeÛeeefuele neslee nw–
(c) small emitter area/ Úesše Fceeršj #es$eheâue (a) VCE = VCC (b) VCE = 0
(d) small collector area/ Úesše keâueskeäšj #es$eheâue (c) VCE = VCC/2 (d) VCE = 0.75 x VCC
Electrical 50000 (MCQ) Volume II 617 YCT
743. Collector current IC of BJT = Ùeefo Skeâ š^ebefpemšj DeeJeMÙekeâ neslee nw 100 Ω efmeiveue
BJT keâer meb«eenkeâ Oeeje IC = Œeesle keâes GÛÛe ØeefleyeeOee DeeGšhegš heefjheLe kesâ meeLe
(a) IE + IB (b) IE – IB efceueeves nsleg, lees mebÙeespeve pees ØeÙegòeâ nesiee nw–
(c) IE – 2IB (d) IE+2IB
744. Power Transistors are invariably provided (a) common-base/ keâe@ceve-DeeOeej
with: (b) common-collector/ keâe@ceve-meb«eenkeâ
Meefòeâ š^eBefpemšj ncesMee .......... kesâ meeLe GheueyOe jnles (c) common-emitter/ keâe@ceve-Glmepe&keâ
nQ– (d) emitter follower/ Glmepe&keâ heâe@ueesDej
(a) heat sink/nerš efmebkeâ 752. Which statement about CE configuration is
(b) metallic casing/OeeeflJekeâ kesâefmebie false?
CE efJevÙeeme kesâ yeejs ceW keâewve-mee keâLeve ieuele nw?
(c) soldered connections/meesu[efjle mebÙeespeve
(a) its power gain is the best
(d) fan for heat removal/G<cee nševes nsleg hebKee Fmekeâe Meefòeâ ueeYe DeÛÚe neslee nw~
745. The current controlled device is: (b) it is the only configuration which provides
Oeeje efveÙebef$ele Ùegefòeâ nw– phase inversion
(a) BJT (b) TRIAC kesâJeue Ùener efJevÙeeme nw, pees keâuee FvJepe&ve Øeoeve keâjlee
(c) SCR (d) FET nw~
746. The value of total collector current in a CB
circuit is (c) its output resistance is very high
CB heefjheLe ceW kegâue meb«eenkeâ Oeeje keâe ceeve neslee nw– Fmekeâe DeeGšhegš ØeeflejesOe yengle GÛÛe neslee nw~
(d) it is the only circuit which has voltage and
(a) IC = αIE (b) IC = αIE + ICO
current gains higher than unity./ kesâJeue Ùener
(c) IC = αIE – ICO (d) IC = βIE
747. Which of the under given for leakage current heef jheLe nw, efpemekeâe Jeesušlee Deewj Oeeje ueeYe FkeâeF& mes
in a CE circuit is false? GÛÛe neslee nw~
CE heefjheLe ceW #ejCe Oeeje kesâ efueS veerÛes efoÙee ieÙee 753. Each of the following statements regarding CC
keâewve-mee JÙebpekeâ ieuele nw? configuration is true except
CC efJevÙeeme kesâ mecyevOe ceW ………. keâes ÚesÌ[keâj efvecve
(a) ICEO = (1 + β) I CO
(b) ICEO = ICO/(1 – α) ØelÙeskeâ keâLeve melÙe nw–
(c) ICEO = IC – βIB (a) It is most suited to match a high impedance
(d) ICEO = (I + β)IB source to a low-impedance load/ Ùen GÛÛe
748. If α = 0.98, then ratio ICEO/ICO is ØeefleyeeOee Œeesle keâes efvecve ØeefleyeeOee Yeej mes efceueeves nsleg
Ùeefo α = 0.98, leye Devegheele ICEO/ICO nw– meyemes GheÙegòeâ neslee nw~
(a) 50 (b) 0.02 (b) it is invariable employed where phase
(c) 49 (d) 1.98 inversion of input signal is required/ Ùen
749. In the normal operation of a PNP transistor, its heefjJele&veerÙe ™he mes Jeneb ØeÙegòeâ efkeâÙee peelee nw, peneB
junctions are biased Fvehegš efmeiveue keâe keâuee FveJepe&ve DeeJeMÙekeâ neslee nw~
Skeâ PNP š^ebefpemšj kesâ meeceevÙe ØeÛeeueve ceW, Fmekeâer (c) it is often used for circuit isolation purposes
mebefOeÙeeB DeefYevele keâer pee mekeâleer nQ– Ùen ØeeÙe: heefjheLe DeeFmeesuesMeve GösMÙe nsleg GheÙeesie neslee
(a) both forward/ oesveeW De«e nw~
(b) both reverse/ oesveeW he§e (d) since it can pass signal in either direction, it is
(c) emitter-base : reverse/ Glmepe&keâ -DeeOeej : efjJeme& also used for two-way amplifier and
collector-base : forward/meb«eenkeâ DeeOeej : heâe@jJe[& switching circuits/ Ûetbefkeâ Ùen efkeâmeer efoMee ceW efmeiveue
(d) emitter-base : forward/ Glmepe&keâ -DeeOeej : heâe@jJe[& heeme keâj mekeâlee nw, Ùen efÉceeieea ØeJeOe&keâ Deewj efmJeefÛebie
collector-base : reverse/ meb«eenkeâ-DeeOeej : efjJeme& heefjheLeeW kesâ efueS Yeer ØeÙegòeâ efkeâÙee peelee nw~
750. In a properly-biased NPN transistor most of 754. The output characteristics for a CB transistor
the electrons from the emitter consist of a family of curves plotted of
GefÛele ™he mes DeefYevele NPN š^ebefpemšj ceW, Glmepe&keâ mes CB š^ebefpemšj kesâ efueS DeeGšhegš DeefYeue#eCe ceW
DeefOekeâlej Fueskeäš^e@ve– ……… kesâ hueeš kesâ Je›eâ keâe heefjJeej neslee nw-
(a) recombine with holes in the base (a) IC against VCB for different values of IB
DeeOeej ceW nesume kesâ meeLe hegve: mebÙeesefpele nesles nQ~ IB kesâ efJeefYeVe ceeveeW kesâ efueS VCB kesâ efJe®æ IC
(b) recombine in the emitter itself (b) VCB against IC for different values of IB
mJeÙeb Glmepe&keâ ceW ner hegve:mebÙeesefpele nesles nQ~ IB kesâ efJeefYeVe ceeveeW kesâ efueS IC kesâ efJe®æ VCB
(c) pass through the base to the collector (c) IC against VCB for different values of IE
DeeOeej mes meb«eenkeâ keâer Deesj iegpejles nQ~ IE kesâ efJeefYeVe ceeveeW kesâ efueS VCB kesâ efJe®æ IC
(d) are stopped by the junction barrier (d) IC against VCE for different values of IB
mebefOe yewefjÙej Éeje jeskeâ efoÙes peeles nQ~ IB kesâ efJeefYeVe ceeveeW kesâ efueS VCE kesâ efJe®æ IC
751. If a transistor is required to match 100 Ω signal 755. Regarding active region of CB transistor
source with a high impedance output circuit, output characteristic of which statement is
the connection that would be used is false?
Electrical 50000 (MCQ) Volume II 618 YCT
CB š^ebefpemšj kesâ DeeGšhegš DeefYeue#eCe kesâ mecyevOe ceW 760. The stability factor of a transistor circuit is
keâewve-mee keâLeve ieuele nw? given by-
(a) the transistor is FR-biased š^ebefpemšj heefjheLe keâe mLeeefÙelJe keâejkeâ ……..kesâ Éeje
š^ebefpemšj FR-yeeÙeme neslee nw~ efoÙee peelee nw–
(b) even when IE =0, Ic ≠0 but equals ICO (a) S = dICO/ dIC
peye IE =0, Ic ≠ 0uesefkeâve ICO kesâ yejeyej (b) S = dIC/ dICO
(c) though essentially independent of VCB, IC (c) S = dIC/ dIE
increases slightly due to Early effect/ÙeÅeefhe (d) S = (I +β) dIC/ dIB
DeeJeMÙekeâ ™he mes VCB mJeleb$e nw, Deueea ØeYeeJe kesâ keâejCe 761. A collector is cut-off, when-
IC yeÌ{leer nw~ Skeâ š^ebefpemšj keâš-Dee@heâ neslee nw, peye–
(d) value of IC is exactly equal to emitter current. (a) IE is slightly greater than IC
IC keâe ceeve hetCe& ™he mes Glmepe&keâ Oeeje kesâ yejeyej neslee IE, IC mes LeesÌ[e pÙeeoe neslee nw~
nw~ (b) IB is zero and IC is maximum
756. In Fig. 3.6 the value of RE which will saturate IB MetvÙe nw Deewj IC DeefOekeâlece nw~
the transistor very nearly is .......... kΩ. (c) IB is zero, IE is zero so that VCE = VCC
efÛe$e ceW RE keâe ceeve, pees š^ebefpemšj keâes yengle meble=efhle IB MetvÙe nw, IE MetvÙe nw leeefkeâ VCE = VCC
keâjssiee ueieYeie …… kΩ nw– (d) IC is midway between maximum and
(a) 5 (b) 10 minimum values
(c) 20 (d) 25 I C, DeefOekeâlece Deewj vÙetvelece ceeveeW kesâ ceOÙe neslee nw~
762. A transistor is in active region when
Skeâ š^ebefpemšj meef›eâÙe #es$e ceW neslee nw, peye–
(a) IB = βIC (b) IC = βIB
(c) IC = IE (d) IC = IB
763. The element that has the biggest size in a
transistor is ...........
IDEAL Jen DeJeÙeJe efpemekeâe Deekeâej š^ebefpemšj ceW meyemes yeÌ[e
neslee nw, nQ–
(a) collector/ meb«eenkeâ
757. When a CE transistor operates with IC = (b) base/ DeeOeej
VCC/RL, it is said to be (c) emitter/ Glmepe&keâ
peye Skeâ CE š^ebefpemšj IC = VCC/RL ØeÛeeefuele neslee (d) collector-base junction/ meb«eenkeâ-DeeOeej mebefOe
nw, lees Ùen keâne peelee nw– 764. In a PNP transistor, the current carriers are
(a) in cut off/ keâš Dee@heâ ceW ..........
(b) in active region/ meef›eâÙe #es$e ceW PNP š^ebefpemšj ceW, Oeeje Jeenkeâ nesles nQ–
(c) in saturation/ meble=efhle ceW (a) acceptor ions/ «eener DeeÙevme
(d) a class-A amplifier/Skeâ Jeie&- A ØeJeOe&keâ (b) donor ions/ oelee DeeÙevme
758. When a CE transistor is cut-off (c) free electrons/ cegòeâ Fueskeäš^e@ve
peye Skeâ CE š^ebefpemšj keâš-Dee@heâ neslee nw– (d) holes/ nesume
(a) maximum collector current flows 765. The collector of a transistor is .......... doped.
DeefOekeâlece meb«eenkeâ Oeeje ØeJeeefnle nesleer nw~ š^ebefpemšj keâe meb«eenkeâ ………[esh[ neslee nw–
(b) maximum voltage appears across load (a) heavily/ GÛÛe ™he mes
resistor/ Yeej ØeeflejesOe kesâ S›eâe@me DeefOekeâlece Jeesušlee
(b) moderately/ ceOÙece ™he mes
efoKeeF& osleer nw~
(c) maximum voltage appears across the collector (c) lightly/ nukeâe
meb«eenkeâ kesâ S›eâe@me DeefOekeâlece Jeesušlee efoKeeF& osleer nw~ (d) none of the above/ Ghejesòeâ keâesF& veneR
(d) minimum voltage appears across the collector 766. In a transistor, ..........
meb«eenkeâ kesâ S›eâe@me vÙetvelece Jeesušlee efoKeeF& osleer nw~ efkeâmeer š^ebefpemšj ceW–
759. The β-sensitivity of a circuit is given by (a) IC = IE + IB
efkeâmeer heefjheLe keâer β-mebJesoveMeeruelee …….kesâ Éeje oer (b) IB = IC + IE
peeleer nw– (c) IE = IC – IB
(d) IE = IC + IB
dβ / β 767. IC = αIE + ...........
(a) Kβ =
dIC / IC
IC = αIE + ………..
I dβ (a) IB (b) ICEO
(b) Kβ = C .
β dIC (c) ICBO (d) βIB
dI / I *768. In a transistor, IC = 100 mA and IE = 100.5 mA.
(c) K β = C C
dβ / β The value of β is ..........
β dIC efkeâmeer š^ebefpemšj ceW, IC = 100 mA Deewj IE = 100.5
(d) Kβ = .
I C dβ mA lees β keâe ceeve nw–
Electrical 50000 (MCQ) Volume II 619 YCT
(a) 100 (b) 50 (a) ICBO (b) ICEO
(c) about 1/ ueieYeie 1 (d) 200 (c) IC (d) IE
*769. In a transistor if β = 100 and collector current 778. BC 147 transistor indicates that it is made of
is 10 mA, then IE is .......... ...........
efkeâmeer š^ebefpemšj ceW Ùeefo β = 100 Deewj meb«eenkeâ Oeeje BC 147 š^ebefpemšj Fbefiele keâjlee nw, efkeâ Ùen ….. keâe
10mA nes, lees IE nw– yevee neslee nw–
(a) 100 mA (a) germanium/ pecexefveÙece
(b) 10.1 mA (b) silicon/ efmeefuekeâe@ve
(c) 110 mA (c) carbon/ keâe@ye&ve
(d) none of the above/ Ghejesòeâ keâesF& veneR (d) none of the above/ Ghejesòeâ keâesF& veneR
770. The value of β for a transistor is generally 779. ICEO = (..........)ICBO
.......... (a) β
efkeâmeer š^ebefpemšj kesâ efueS β keâe ceeve meeceevÙele: neslee (b) 1 + α
nw– (c) 1 + β
(a) 1 (d) none of the above/ Ghejesòeâ ceW mes keâesF& veneR
(b) less than 1/ 1 mes keâce 780. Consider the following statements regarding
(c) between 20 and 500/ 20 Deewj 500 kesâ yeerÛe the class-B power amplifiers (Complementary
(d) above 500/ 500 mes Thej symmetry type):
771. The input impedance of a transistor connected keäueeme- B hee@Jej SchueerheâeÙejeW (hetjkeâ mece™helee Øekeâej)
in ........... arrangement is the highest. kesâ yeejs ceW efvecveefueefKele keâLeveeW hej efJeÛeej keâjW–
……. ceW mebÙeesefpele š^ebefpemšj keâer Fvehegš ØeefleyeeOee 1. The efficiency of the amplifier is higher than
GÛÛelece nesleer nw~ that of class-A amplifier./SchueerheâeÙej keâer o#elee keäueeme-
(a) common emitter/ keâe@ceve Glmepe&keâ A SchueerheâeÙej keâer leguevee ceW DeefOekeâ nesleer nw~
(b) common collector/ keâe@ceve meb«eenkeâ 2. The power output is low
(c) common base/ keâe@ceve DeeOeej DeeGšheg š Meefòeâ efvecve nesleer nw~
3. Crossover distortion is present
(d) none of the above/ Ghejesòeâ keâesF& veneR
772. The power gain of a transistor connected in
›eâe@me DeesJej ef[mšeMe&ve GheefmLele neslee nw~
.............arrangement is the highest. 4. The standby power dissipation is absent
…….. ØeyebOe ceW mebÙeesefpele š^ebefpemšj keâe Meefòeâ ueeYe Deefleefjòeâ hee@Jej JÙeÙe keâer DevegheefmLeefle nesleer nw~
Which of the above statements are correct?
GÛÛelece neslee nw– Ghejesòeâ keâLeveeW ceW mes keâewve-mee mener nw?
(a) common emitter/ keâe@ceve Glmepe&keâ
(a) 1, 2 and 3 / 1, 2 Deewj 3
(b) common base/ keâe@ceve DeeOeej
(b) 1, 2 and 4 / 1, 2 Deewj 4
(c) common collector/ keâe@ceve meb«eenkeâ
(c) 1, 3 and 4 / 1, 3 Deewj 4
(d) none of the above/ Ghejesòeâ keâesF& veneR
(d) 2, 3 and 4 / 2, 3 Deewj 4
773. As the temperature of transistor goes up, the
781. Heat sink is used in the power amplifier circuit
base-emitter resistance ..........
efkeâmeer š^ebefpemšj keâe leeheceeve pewmes yeÌ{lee nw, DeeOeej- hee@Jej SchueerheâeÙej meefke&âš ceW nerš efmebkeâ keâe GheÙeesie
Glmepe&keâ ØeeflejesOe …….. efkeâÙee peelee nw–
(a) to increase the output power
(a) decreases/ Iešlee nw~
DeeGšhegš Meefòeâ keâes yeÌ{eves kesâ efueS
(b) increases/ yeÌ{lee nw~ (b) to reduce the heat loss in a transistor
(c) remains the same/ meceeve jnlee nw~ š^ebefpemšj ceW nerš neefveÙeeW keâes keâce keâjves kesâ efueS
(d) none of the above/ Ghejesòeâ keâesF& veneR (c) to increase the voltage gain of the power
774. The phase difference between the input and amplifier
output voltage of a transistor connected in hee@Jej SchueerheâeÙej kesâ Jeesušspe iesve keâes yeÌ{eves kesâ efueS
common collector arrangement is .......... (d) to increase the collector dissipation rating of
keâe@ceve meb«eenkeâ ØeyebOe ceW mebÙeesefpele š^ebefpemšj kesâ Fvehegš the transistor / š^ebefpemšj keâer keâueskeäšj DeheJÙeÙe jsefšbie
Deewj DeeGšhegš JeesušleeDeeW kesâ ceOÙe keâueevlej neslee nw– keâes yeÌ{eves kesâ efueS
(a) 1800 (b) 00 *782. A transistor has a maximum power dissipation
(c) 900 (d) 2700 limit of 300 mW for ambient temperature up to
775. IC = β I B + ......... 25° C. If the maximum allowable junction
(a) ICBO (b) IC temperature is 175° C, then what is the limit of
(c) ICEO (d) α IE the device in an ambient temperature of 55° C?
776. IC = α I B + ............ Skeâ š^ebefpemšj ceW 25ºC lekeâ kesâ JÙeehekeâ leeheceeve kesâ
1−α efueS 300 mW keâer DeefOekeâlece Meefòeâ DeheJÙeÙe meercee nw,
(a) ICEO (b) ICBO
Ùeefo DeefOekeâlece mJeerkeâeÙe& pebkeäMeve leeheceeve 175ºC nes,
(c) IC (d) (1- α)IB
lees 55ºC kesâ JÙeehekeâ leeheceeve kesâ efueS Ùegefòeâ keâer meercee
777. IC = α I B + ........... keäÙee nw?
1−α 1−α
Electrical 50000 (MCQ) Volume II 620 YCT
(a) 120 mW (b) 240 mW (c) there is no quiescent collector current
(c) 300 mW (d) 360 mW keâesF& Yeer efmLej keâueskeäšj Oeeje veneR nw~
*783. An output signal of a power amplifier has (d) low forward biasing voltage is required
amplitudes of 2.5V fundamental, 0.25 V second efvecve heâejJe[& yeeÙeefmebie Jeesušlee keâer DeeJeMÙekeâlee nesleer nw~
harmonic and 0.1 V third harmonic. The total 788. Which one of the following statements is
percentage harmonic distortion of the signal is correct?
Skeâ hee@Jej SchueerheâeÙej kesâ Skeâ DeeGšhegš efmeiveue ceW The efficiency of class B push –pull amplifiers
2.5V henueer neceexefvekeâ, 0.25V otmejer neceexefvekeâ Deewj is much higher than that of class-A amplifiers
0.1V leermejer neceexefvekeäme kesâ DeeÙeece nQ~ efmeiveue keâe kegâue primarily because :
ØeefleMele neceexefvekeâ efJe™heCe nw– efvecveefueefKele keâLeveesb ceW mes keâewve-mee mener nw?
(a) 12.8% (b) 10.8% keäueeme B hegMe-hegue SchueerheâeÙej keâer o#elee cegKÙe ™he
(c) 6.4% (d) 1.4% mes keäueeme, A SchueerheâeÙej mes yengle DeefOekeâ nesleer nw,
784. In a transistor push pull amplifier : keäÙeeWefkeâ–
Skeâ š^ebefpemšj hegMe-hegue SchueerheâeÙej ceW– (a) the distortion is kept within acceptable limits
(a) there is no dc present in the output efJe™heCe mJeerkeâeÙe& meercee kesâ Devoj jKee peelee nw~
DeeGšhegš ceW keâesF& [er.meer. ceewpeto veneR nw~ (b) one half of the input signal is amplified using
(b) there is no distortion in the output one transistor and the other half is phase
DeeGšhegš ceW keâesF& efJe™heCe veneR nw~ inverted and fed to the other transistor/Fvehegš
(c) there are no odd harmonics in the output efmeiveue ceW mes Skeâ keâes Skeâ š^ebefpemšj keâe GheÙeesie keâjkesâ
DeeGšhegš ceW keâesF& efJe<ece neceexefvekeäme veneR nw~ ØeJee|Oele efkeâÙee peelee nw Deewj otmeje hesâpe FveJešx[ Deewj
(d) None of these otmejs š^ebefpemšj keâes heâer[ efkeâÙee peelee nw~
FveceW mes keâesF& veneR (c) matched pair transistors are used in the class
785. What is the main source of distortion in a push B push –pull operation/efceueeve peesÌ[er š^eefvpemšj keâe
–pull amplifier?
Skeâ hegMe-hegue SchueerheâeÙej ceW efJe™heCe keâe cegKÙe Œeesle GheÙeesie keäueeme- B hegMe-hegue Dee@hejsMeve ceW efkeâÙee peelee
keäÙee nw? nw~
(d) the quiescent dc current is avoided
(a) Fundamental component / ceewefuekeâ Ieškeâ efmLej [er.meer. Oeeje mes yeÛee peelee nw~
(b) Second harmonic / efÉleerÙe neceexefvekeâ 789. The circuit efficiency of a class A amplifier can
(c) Third harmonic / le=leerÙe neceexefvekeâ be increased with :
(d) All even harmonics / meYeer mece neceexefvekeäme Jeie& A SchueerheâeÙej keâer heefjheLe o#elee ______ kesâ meeLe
786. Consider the following statements : yeÌ{eÙeer pee mekeâleer nw–
efvecveefueefKele keâLeveeW hej efJeÛeej keâjW– (a) direct-coupled load / ØelÙe#e Ùegeficele uees[~
1. Only even harmonics are present in the output. (b) low dc power input / efvecve [er.meer. hee@Jej Fvehegš~
DeeGšhegš ceW kesâJeue mece neceexefvekeäme GheefmLele nesles nQ~ (c) transformer coupled load
2. Provides more output per device for a given š^eBmeheâe@ce&j Ùegeficele uees[~
amount of distortion
(d) low rating resistor / efvecve jsefšbie ØeeflejesOe~
efJeke=âefle keâer oer ieÙeer jeefMe kesâ efueS Øeefle GhekeâjCe DeefOekeâ
790. In class A amplifier, conduction extends over
DeeGšhegš Øeoeve keâjlee nw 360° because Q-point is:
3. Core saturation of transformer is avoided Jeie& A SchueerheâeÙej ceW, Ûeeueve 360° mes DeefOekeâ nw,
š^ebmeheâece&j keâer keâesj meble=efhle mes yeÛee pee mekeâlee nw~
4. Power supply hum is absent in the output.
keäÙeeWefkeâ Q-efyevog nw–
DeeGšhegš ceW hee@Jej mehueeF& nce DevegheefmLele neslee nw~ (a) located on load line / uees[ ueeFve hej efmLele neslee nw
Which of the above statements is/are correct (b) located at or near cutoff point
for a push-pull amplifier? keâš-Dee@heâ efyevog hej Ùee heeme efmLele neslee nw~
Ghejesòeâ ceW keâewve-mee keâLeve hegMe-hegue SchueerheâeÙej kesâ (c) located near saturation point
efueS mener nw? mewÛegjsMeve efyevog kesâ heeme efmLele neslee nw~
(a) 1 only / kesâJeue 1 (d) centred on load line
(b) 1 and 2 only / kesâJeue 1 Deewj 2 uees[ ueeFve hej kesâefvõle neslee nw~
(c) 1, 2 and 3. / 1, 2 Deewj 3 791. What is the purpose of impedance matching
(d) 2, 3 and 4 / 2, 3 Deewj 4 between the output of previous stage and input
787. High power efficiency of the push –pull of next stage in a cascaded amplifier?
amplifier is due to the fact that : Skeâ kewâmkesâ[s[ SchueerheâeÙej ceW henues ÛejCe keâer DeeGšhegš
hegMe-hegue SchueerheâeÙej keâer GÛÛe Meefòeâ o#elee Fme leLÙe Deewj Deieues ÛejCe keâer Fvehegš kesâ yeerÛe ØeefleyeeOee efceueeve
kesâ keâejCe nw efkeâ– keâe GösMÙe keäÙee nw?
(a) each transistor conducts on different cycles of (a) To achieve high efficiency
the input/ØelÙeskeâ š^eefvpemšj Fvehegš kesâ efYeVe-efYeVe Ûe›eâeW
hej Ûeeueve keâjlee nw~ GÛÛe o#elee Øeehle keâjves kesâ efueS
(b) transistors are placed in CE configuration (b) To achieve maximum power transfer
š^eefvpemšj keâes CE keâe@efvheâiegjsMeve hej jKee peelee nw~ DeefOekeâlece hee@Jej mLeeveeblejCe Øeehle keâjves kesâ efueS
Electrical 50000 (MCQ) Volume II 621 YCT
(c) To achieve reduced distortion 797. The most popularly used transistor biasing
keâce efJeke=âefle keâes Øeehle keâjves kesâ efueS circuit is?
(d) To achieve reduced noise meyemes ueeskeâefØeÙe š^ebefpemšj yeeÙeefmebie meefke&âš nw?
keâce Meesj keâes Øeehle keâjves kesâ efueS (a) Fixed Bias/efmLej yeeÙeme
*792. An amplifier having an output resistance of 4Ω (b) Feedback Bias/heâer[yewkeâ yeeÙeme
gives an open circuit output voltage of 6 V (c) Potential Divider Bias
(rms). The maximum power that it can deliver heesšQefMeÙeue ef[JeeF[j yeeÙeme
to a load is : (d) 2 Battery Bias/2 yewšjer yeeÙeme
Skeâ 4Ω DeeGšhegš ØeeflejesOe Jeeuee Skeâ SchueerheâeÙej 6V 798. The majority carriers in the emitter of a PNP
(rms) keâe Keguee heefjheLe DeeGšhegš Jeesušspe oslee nw~ transistor are?
DeefOekeâlece Meefòeâ efpemes Jen Skeâ uees[ lekeâ hengBÛee PNP š^ebefpemšj kesâ Glmepe&keâ ceW DeefOekeâebMe Jeenkeâ nw?
mekeâlee nw– (a) holes/nesue
(a) 1.5W (b) 2.25W (b) free electrons/cegòeâ Fueskeäš^e@ve
(c) 2.4W (d) 9W (c) trivalent atoms/ef$emebÙeespeer hejceeCeg
793. Which of the following is the principal factor (d) pentavalent atoms/hebÛe mebÙeespeer hejceeCeg
that contributes to the doubling of the
conversion efficiency in a transformer coupled 799. If time period of a signal is 40µs, the signal
amplifier? frequency is?
efvecve ceW mes keâewve-mee ØecegKe keâejkeâ nw, pees š^ebmeheâe@ce&j Ùeef o efkeâmeer efmeiveue keâer meceÙe DeJeefOe 40µs nw, lees
Ùegeficele SchueerheâeÙej ceW ™heeblejCe o#elee kesâ oesnjs ceW efmeiveue DeeJe=efòe nw?
Ùeesieoeve oslee nw– (a) 25 KHz (b) 40 MHz
(c) 25 MHz (d) 40 KHz
(a) Reducing the power dissipated in the 800. The most stable biasing technique used is the?
transistor/š^ebefpemšj ceW Meefòeâ DeheJÙeÙe keâes keâce keâjvee meyemes efmLej yeeÙeefmebie lekeâveerkeâ keâe GheÙeesie efkeâÙee peelee
(b) Eliminating the power dissipation in the
transformer nw?
š^ebefpemšj ceW Meefòeâ DeheJÙeÙe keâes ve° keâjvee~ (a) voltage-divider bias/Jeesušspe efJeYeòeâ yeeÙeme
(c) Elimination of dc power dissipated in the load (b) base bias/DeeOeej yeeÙeme
uees[ ceW [er.meer. Meefòeâ DeheJÙeÙe keâes ve° keâjvee (c) emitter bias/Glmepe&keâ yeeÙeme
(d) Impedance matching of the transformer (d) collector bias/keâueskeäšj yeeÙeme
š^ebmeheâe@ce&j keâe ØeefleyeeOee efceueeve 801. If Emitter-Base junction is reverse biased and
794. What is the most frequently encountered Collector-Base junction is forward biased in a
transistor configuration? BJT, then the device is said to be in?
meyemes DeefOekeâ yeej meecevee efkeâÙee peeves Jeeuee š^ebefpemšj Ùeefo BJT ceW Sceeršj-yesme pebkeäMeve efjJeme& yeeÙeme Deewj
efJevÙeeme keäÙee nw? keâuekeäšj-yesme pebkeäMeve De«e yeeÙeme nw, lees Ùegefòeâ keâes
(a) Common-base/keâe@ceve yesme keâne peelee nw?
(b) Common-collector/keâe@ceve keâueskeäšj (a) Forward Active/De«e meef›eâÙe
(c) Common-emitter/keâe@ceve Sceeršj (b) Saturation/meble=hle
(d) Emitter-collector/Sceeršj keâueskeäšj (c) Large Current/DeefOekeâ Oeeje
795. Determine the value of α when β=100? (d) Large bandwidth/DeefOekeâ yewC[efJe[dLe
peye β=100 lees α keâe ceeve %eele keâjW? 802. CE amplifier is characterised by
(a) 1.01 CE ØeJeOe&keâ efkeâmekesâ Éeje efJeMes<eerke=âle efkeâS peeles nQ?
(b) 101 (a) Low voltage gain / efvecve Jeesušlee ueeYe
(c) 0.99 (b) Moderate power gain / ceOÙece Meefòeâ ueeYe
(d) Cannot be solved/nue vener efkeâÙee pee mekeâlee~ (c) Signal phase reversal / efmeiveue hesâpe efjJeme&ue
796. Emitter follower has? (d) Very high output impedance
Sceeršj Heâe@ueesDej nw? yengle GÛÛe DeeGšhegš ØeefleyeeOee
(a) high input impedance and high output 803. The type of power amplifier which exhibits
impedance crossover distortion in its output is:
GÛÛe Fvehegš ØeefleyeeOee SJeb GÛÛe DeeGšhegš ØeefleyeeOee efkeâme Øekeâej keâe Meefòeâ ØeJeOe&keâ Deheves DeeGšhegš ceW
(b) high input impedance and low output ›eâeme-DeesJej efJe™heCe ØeoefMe&le keâjlee nw–
impedance (a) Class A/keäueeme A (b) Class B/keäueeme B
GÛÛe Fvehegš ØeefleyeeOee SJeb efvecve DeeGšhegš ØeefleyeeOee (c) Class AB/keäueeme AB (d) Class C/keäueeme C
(c) low input impedance and high coutput 804. Removing bypass capacitor across the emitter-
impedance leg resistor in a CE amplifier causes:
efvecve Fvehegš ØeefleyeeOee SJeb GÛÛe DeeGšhegš ØeefleyeeOee CE ØeJeOe&keâ ceW Sceeršj uesie jefpemšj kesâ S›eâeme yeeFheeme
(d) low input impedance and low output mebOeeefj$e keâes nševes hej neslee nw–
impedance (a) increase in current gain /Oeeje ueeYe ceW Je=eæ
f ~
efvecve Fvehegš ØeefleyeeOee SJeb efvecve DeeGšhegš ØeefleyeeOee (b) decrease in current gain /Oeeje ueeYe ceW keâceer~
Electrical 50000 (MCQ) Volume II 622 YCT
(c) increase in voltage gain/Jeesušlee ueeYe ceW Je=efæ~ 810. One of the advantage of base modulation over
(d) decrease in voltage gain/Jeesušlee ueeYe ceW keâceer~ collector modulation of a transistor class C
805. For an op-amp having differential gain Av and amplifier is–
common-mode gain Ac the CMRR is given by: Skeâ š^ebefpemšj Jeie&-C SchueerheâeÙej keâe keâueskeäšj
Skeâ op-amp efpemekeâe ef[heâjsefvmeÙeue ueeYe Av Deewj cee@[guesMeve hej yesme cee@[guesMeve keâe Skeâ ueeYe nw–
keâe@ceve cees[ iesve Ac nw, kesâ efueS CMRR efkeâmekesâ Éeje (a) the lower modulating power required
efoÙee peelee nw? efvecve cee@[guesefšbie hee@Jej DeeJeMÙekeâ~
(b) higher power output per transistor
Av GÛÛe hee@Jej DeeGšhegš Øeefle š^ebefpemšj
(a) AV + AC (b)
Ac (c) better efficiency / yesnlej o#elee
AV Ac (d) better linearity / yesnlej jsKeerÙelee
(c) +1 (d)
AC Av 811. In a class C amplifier :
806. For a bipolar Transistor which of the following Skeâ Jeie&- C SchueerheâeÙej ceW–
is not true? (a) efficiency and distortion both are maximum
efkeâmeer efÉOegÇJeerÙe š^eBefpemšj kesâ efueS efvecve ceW mes keâewve o#elee Deewj efJe™heCe oesveeW DeefOekeâ neslee nQ~
melÙe veneR nw? (b) efficiency maximum but distortion minimum
(a) IC = (β + 1)IB (b) IE =IB + IC o#elee DeefOekeâlece uesefkeâve efJe™heCe vÙetvelece neslee nw~
(c) IC = βIB (d) IB = IE – IC (c) efficiency minimum but distortion maximum
807. Which of the following statement is not true? o#elee vÙetvelece uesefkeâve efJe™heCe DeefOekeâlece neslee nw~
efvecve ceW mes keâewve mee keâLeve melÙe veneR nw? (d) None of the above /Ghejesòeâ ceW mes keâesF& veneR~
(a) In class A amplifier distortion is low 812. The efficiency of a class B amplifier is 72%
Jeie&-A ØeJeOe&keâ ceW efJe™heCe efvecve neslee nw~ when the supply voltage is 24 V. The peak to
(b) In class B amplifier power gain is high peak output voltage is :
Jeie&-B ØeJeOe&keâ ceW Meefòeâ ueeYe GÛÛe neslee nw~ Skeâ Jeie&- B SchueerheâeÙej keâer o#elee 72% nw, peye
(c) In class C amplifier distortion is high mehueeF& Jeesušspe 24V nw~ heerkeâ-št-heerkeâ DeeGšhegš
Jeie&-C ØeJeOe&keâ ceW efJe™heCe GÛÛe neslee nw~ Jeesušspe nw–
(d) In class C amplifier distortion is low (a) 20 V (b) 22 V
Jeie&-C ØeJeOe&keâ ceW efJe™heCe efvecve neslee nw~ (c) 25 V (d) 16 V
808. A transistorised transformer coupled class-A 813. What is the effect of cascading the amplifier
amplifier supplies 0.94 W to a 4 kΩ load. The stages?
zero signal dc collector current is 31 mA and SchueerheâeÙej ÛejCeeW keâer kewâmkesâef[bie keâe keäÙee ØeYeeJe nw–
the dc collector current with the signal is 34 (a) To increase the voltage gain and increase the
mA. What is the percent second harmonic bandwidh/Jeesušspe ueeYe Deewj yeQ[-efJe[dLe keâes yeÌ{evee~
distortion? (b) To increase the voltage gain and reduce the
Skeâ š^ebefpemšj Ùegòeâ š^ebmeheâe@ce&j Ùegeficele Jeie&- A bandwidth/Jeesušspe ueeYe keâes yeÌ{evee Deewj yeQ[ efJe[dLe
SchueerheâeÙej Skeâ 4kΩ uees[ keâes 0.94 W mehueeF& oslee keâes keâce keâjvee~
nw~ MetvÙe efmeiveue [er.meer. keâueskeäšj Oeeje 31mA nw Deewj (c) To decrease the voltage gain and increase the
efmeiveue kesâ meeLe [er.meer. keâueskeäšj Oeeje 34 mA nw~ bandwidth / Jeesušspe ueeYe keâes keâce keâjvee Deewj yeQ[-
efÉleerÙe-neceexefvekeâ-efJe™heCe keâe ØeefleMele keäÙee nw? efJe[dLe keâes yeÌ{evee~
(a) ~ 50%
(b) 0 % (d) To decrease the voltage gain and reduce the
(c) ~ 20% bandwidth
(d) Cannot be computed with the available Jeesušspe ueeYe keâes keâce keâjvee Deewj yeQ[-efJe[dLe keâes keâce
information keâjvee~
GheueyOe peevekeâejer kesâ meeLe ieCevee veneR keâer pee mekeâleer nw~ 814. By increasing the number of identical stages in
809. Where does the operating point of a class-B an amplifier, the gain bandwidth product
power amplifier lie? Skeâ SchueerheâeÙej ceW meceeve ÛejCeeW keâer mebKÙee yeÌ{eves mes,
Jeie&- B hee@Jej SchueerheâeÙej keâe Dee@hejsefšbie efyevog keâneB ueeYe yeQ[-efJe[dLe iegCeveheâue–
efveefnle neslee nw?
(a) decreases /Iešsiee
(a) At the middle of ac load line
(b) becomes unity/ Skeâ nes peeÙesiee
S.meer. uees[ ueeFve kesâ yeerÛe ceW
(b) Approximately at collector cutoff on both the (c) remains constant / efmLej nes peeÙesiee
dc and ac load lines (d) increases / yeÌ{siee
oesveeW [er.meer. Deewj S.meer. uees[ ueeFveeW hej keâueskeäšj 815. Power gain in decibels is equal to voltage gain
keâšDee@heâ ceW ueieYeie~ in decibels only when :
(c) Inside the collector cutoff region on ac load [s efmeyeue ceW Meefòeâ ueeYe kesâJeue [sefmeyeue ceW Jeesušspe
line./S.meer. uees[ ueeFve hej keâueskeäšj keâš-Dee@heâ #es$e kesâ
Devoj~ ueeYe kesâ yejeyej neslee nw, peye–
(d) At the middle point dc load line (a) input impedance is zero
[er.meer. uees[ ueeFve kesâ ceOÙe efyevog hej~ Fvehegš ØeefleyeeOee MetvÙe nesleer nw~
Electrical 50000 (MCQ) Volume II 623 YCT
(b) output impedance is zero (a) equals VCC and IC is high
DeeGšhegš ØeefleyeeOee MetvÙe nesleer nw~ VCC kesâ yejeyej Deewj IC GÛÛe nesleer nw~
(c) never / keâYeer veneR (b) equals VCC and IC is zero
(d) input impedance is equal to output impedance VCC kesâ yejeyej Deewj IC MetvÙe nesleer nw~
Fvehegš ØeefleyeeOee, DeeGšhegš ØeefleyeeOee kesâ yejeyej nesleer nw~ (c) is low and IC is high
816. In an amplifier, the coupling capacitors are efvecve neslee nw Deewj IC GÛÛe nesleer nw~
employed for : (d) is high and IC is low
Skeâ SchueerheâeÙej ceW, Ùegiceve mebOeeefj$e keâeÙe&jle nw– GÛÛe nesleer nw Deewj IC efvecve nesleer nw~
(a) limiting the bandwidth 821. In a BJT, largest current flow occurs
yeQ[-efJe[dLe keâes meerefcele keâjves kesâ efueS Skeâ BJT ceW, DeefOekeâlece Oeeje ØeJeen neslee nw–
(b) matching the impedances (a) in the emitter/ Glmepe&keâ ceW
ØeefleyeeOee efceueeve kesâ efueS (b) in the collector/ meb«eenkeâ ceW
(c) controlling the output (c) in the base/ DeeOeej ceW
DeeGšhegš keâes efveÙeefv$ele keâjves kesâ efueS (d) through CB junction/ CB mebefOe kesâ ceeOÙece mes
(d) preventing of dc mixing with input or output 822. When a BJT operates in cut-off
Fvehegš Ùee DeeGšhegš kesâ meeLe [ermeer efceefkeämebie keâes jeskeâves peye BJT keâš-Dee@heâ ceW ØeÛeeefuele neslee nw, lees–
kesâ efueS~ (a) VCE = 0
817. A signal Vm sin (ωt + φ) is applied to an (b) VCE = VCC
amplifier whose gain A is independent of (c) VCE has negative value/ VCE keâe ceeve $e+Ceelcekeâ
frequency. The amplifier will preserve the form neslee nw~
of the input signal (though with a delay) if the
(d) IC is maximum/ IC DeefOekeâlece neslee nw~
phase shift φ is :
Skeâ efmeiveue Vm sin (ωt + φ) Skeâ SchueerheâeÙej hej 823. peye When a BJT is in saturation
BJT meble=hle ceW neslee nw, lees–
ueeiet efkeâÙee ieÙee nw, efpemekeâe ueeYe A DeeJe=efòe mes mJeleb$e (a) IC = 0
neslee nw~ SchueerheâeÙej Fvehegš efmeiveue (ÙeÅeefhe Skeâ osjer (b) IB controls IC/ IB, IC keâes efveÙebe$f ele keâjlee nw~
kesâ meeLe) kesâ ™he keâes mebjef#ele keâjsiee, Ùeefo hesâpe efMeheäš (c) VCE = 0
φ– (d) VCE has positive value
(a) constant / efmLej jnsiee VCE keâe ceeve Oeveelcekeâ neslee nw~
(b) inversely proportional to frequency 824. A transistor is operated as a non-saturated
DeeJe=efòe kesâ JÙegl›eâceevegheeleer nesiee~ switch to eliminate-
(c) proportional to frequency Skeâ š^ebefpemšj …….. keâes meceehle keâjves kesâ efueS,
DeeJe=efòe kesâ Deevegheeeflekeâ nesiee Demeble=hle-efmJeÛe keâer lejn ØeÛeeefuele efkeâÙee peelee nw-
(d) proportional to the square of the frequency (a) storage time/ mšesjspe meceÙe
DeeJe=efòe kesâ Jeie& kesâ Deevegheeeflekeâ nesiee~ (b) turn-off time/ šve&-Dee@heâ meceÙe
818. The amplifier gain varies with freqency. This (c) turn-on time/ šve&-Dee@ve meceÙe
happens mainly due to :
(d) delay time/ ef[ues meceÙe
SchueerheâeÙej ueeYe DeeJe=efòe kesâ meeLe yeouelee jnlee nw~
825. In case of amplifiers, which coupling gives the
Ùen cegKÙe ™he mes ________kesâ keâejCe neslee nw– highest gain?
(a) Miller effect / efceuej ØeYeeJe SchueerheâeÙejeW kesâ mebyebOe ceW, keâewve-mee Ùegiceve meyemes
(b) Logarithmic increase in its output power DeefOekeâ ueeYe oslee nw?
Fmekeâer DeeGšhegš Meefòeâ ceW ueIegieCekeâerÙe Je=efæ (a) Transformer coupling / š^ebmeheâe@ce&j Ùegiceve
(c) Interstage transformers / Fbšjmšspe š^ebmeheâece&j (b) Resistance coupling / ØeeflejesOe Ùegiceve
(d) Presence of external and internal capacitances
(c) Impedance coupling / ØeefleyeeOee Ùegiceve
yeenjer Deewj Deevleefjkeâ Oeeefjlee keâer GheefmLeefle
819. The bandwidh of an amplifier may be (d) Capacitance coupling / mebOeeefj$e Ùegiceve
increased by: *826. Three indentical amplifiers each having a
SchueerheâeÙej keâer yeQ[-efJe[dLe yeÌ{eF& pee mekeâleer nw– voltage gain of 50 are cascaded. The open loop
voltage gain of the combined amplifier is :
(a) reducing the stray capacitances to the
minimum possible
leer
ve meceeve SchueerheâeÙej, efpeveceW mes ØelÙeskeâ ceW 50 keâe
vÙetvelece mebYeJe kesâ efueS mš^s Oeeefjlee keâes keâce keâjkesâ~ Jeesušspe ueeYe nw, kewâmkesâ[ efkeâÙee peelee nw~ mebÙegòeâ
(b) cascading it. / Fmes kewâmkesâef[bie keâjkesâ~ SchueerheâeÙej keâe Keguee uethe Jeesušspe ueeYe nw–
(c) reducing the capacitance of bypass capacitors (a) 71 dB (b) 82 dB
(c) 91 dB (d) 102 dB
yeeF&heeme mebOeeefj$e keâer Oeeefjlee keâes keâce keâjkesâ~ *827. When two amplifiers each of bandwidth, fH =
(d) increasing input signal frequency 10kHz are cascaded, the overall bandwidth
Fvehegš efmeiveue DeeJe=efòe keâes yeÌ{e keâjkesâ~ becomes :
820. When an NPN transistor is cut-off, its VCC peye yeQ[-efJe[dLe, fH = 10kHz kesâ ØelÙeskeâ oes ØeJeOe&keâeW
peye NPN š^ebefpemšj keâš-Dee@heâ neslee nw, lees Fmekeâer keâes kewâmkesâ[ efkeâÙee peelee nw, lees kegâue yeQ[-efJe[dLe yeve
VCC– peeleer nw–
Electrical 50000 (MCQ) Volume II 624 YCT
(a) 10 kHz (b) 6.4 kHz 2. Emitter bypass capacitor/ Sceeršj yeeF&heeme mebOeeefj$e
(c) 5 kHz (d) 20 kHz 3. Emitter to base diffusion capacitance of the
828. In an RC coupled transistors amplifier : BJT/ BJT keâer Sceeršj mes yesme ef[heäÙetpeve Oeeefjlee
Skeâ RC keâheu[ š^ebefpemšj SchueerheâeÙej ceW– 4. Stray capacitance of the circuit.
1. low-frequency response is determined by heefjheLe keâer mš^s Oeeefjlee~
coupling capacitors/ efvecve-DeeJe=efòe Øeefleef›eâÙee, Ùegiceve Which of these components in a R-C coupled
mebOeeefj$e Éeje efveOee&efjle neslee nw~ amplifier control the lower cut-off frequency of
2. high-frequency response is determined by the amplifier?
junction capacitances./GÛÛe DeeJe=efòe Øeefleef›eâÙee, pebkeäMeve RC- Ùegeficele SchueerheâeÙej ceW Fve IeškeâeW ceW mes keâewve-mee
mebOeeefj$e Éeje efveOee&efjle neslee nw~ SchueerheâeÙej keâer efveÛeueer keâš-Dee@heâ DeeJe=efòe keâes
3. mid-frequency response is determined by both efveÙebef$ele keâjlee nw?
coupling and junction capacitances (a) 1 and 2 / 1 Deewj 2
ceOÙe-DeeJe=efòe Øeefleef›eâÙee, Ùegiceve leLee pebkeäMeve Oeeefjlee oesveeW (b) 2 and 3 / 2 Deewj 3
Éeje efveOee&efjle keâer peeleer nw~ (c) 3 and 4 / 3 Deewj 4
Which of these statements is / are correct?
(d) 1 and 4 / 1 Deewj 4
FveceW mes keâewve-mee keâLeve mener nw?
832. R-C coupling is proper in low-level AF
(a) 1 and 2 only / kesâJeue 1 Deewj 2 amplifier because it :
(b) 1 and 3 only / kesâJeue 1 Deewj 3 R-C Ùegiceve efvecve mlej AF ØeJeOe&keâ ceW GefÛele nw,
(c) 2 and 3 only / kesâJeue 2 Deewj 3 keäÙeeWefkeâ Ùen–
(d) 1, 2 and 3 / 1, 2 Deewj 3 (a) is inexpensive and needs no adjustment.
829. Low frequency response of RC coupled memlee nw Deewj FmeceW efkeâmeer Yeer meceeÙeespeve keâer
amplifier can be improved by DeeJeMÙekeâlee veneR nw~
RC Ùegeficele SchueerheâeÙej keâer keâce DeeJe=efòe Øeefleef›eâÙee ceW (b) has better low frequency response
megOeej efkeâÙee pee mekeâlee nw– yesnlej keâce DeeJe=efòe Øeefleef›eâÙee nw~
(a) increasing the value of the coupling capacitor (c) needs low voltage battery
only / kesâJeue Ùegeficele mebOeeefj$e kesâ ceeve keâes yeÌ{ekeâj~ keâce Jeesušspe yewšjer keâer DeeJeMÙekeâlee nw~
(b) increasing the values of the bypass capacitor (d) provides an output signal in phase with input
and coupling capacitor/yeeF&heeme mebOeeefj$e Deewj signal / Fvehegš efmeiveue kesâ meeLe hesâpe ceW DeeGšhegš
Ùegeficele mebOeeefj$e kesâ ceeveeW keâes yeÌ{ekeâj~ efmeiveue Øeoeve keâjlee nw~
(c) increasing the value of bypass capacitor only 833. Harmonic distortion of the signal is produced
kesâJeue yeeF&heeme mebOeeefj$e kesâ ceeve keâes yeÌ{ekeâj~ in an R-C coupled transistor amplifier. The
(d) decreasing the value of the coupling capacitor probable component responsible for it is :
Ùegeficele mebOeeefj$e kesâ ceeve keâes keâce keâjkesâ~ efmeiveue keâe neceexefvekeâ efJe™heCe R-C Ùegeficele š^ebefpemšj
830. The bandwidth of an RC coupled amplifier is SchueerheâeÙej ceW GlheVe neslee nw~ Fmekesâ efueS efpeccesoej
limited by : mebYeeefJele Ieškeâ nw–
RC Ùegeficele ØeJeOe&keâ keâer yeQ[-efJe[dLe meerefcele nesleer nw– (a) power supply VCC / Meefòeâ Deehetelf e& VCC
(a) coupling capacitors at the low frequency end (b) coupling capacitor CC / Ùegeficele mebOeeefj$e CC
and bypass capacitors at the high frequency
(c) transistor itself / mJeÙeb š^ebefpemšj
end /keâce DeeJe=efòe efmeje hej Ùegeficele mebOeeefj$e Deewj GÛÛe
(d) biasing resistors R1 and R2
DeeJe=efòe efmeje hej yeeF&heeme mebOeeefj$e ueieeves hej~ yeeÙeefmebie ØeeflejesOe R1 Deewj R2
(b) coupling capacitors at the high frequency end 834. Consider the following components in a
and bypass capacitors at the low frequency multistage R-C coupled amplifier.
end / GÛÛe DeeJe=efòe efmeje hej Ùegiceve mebOeeefj$e Deewj keâce R-C Ùegeficele SchueerheâeÙej ceW efvecveefueefKele DeJeÙeJeeW hej
DeeJe=efòe efmeje hej yeeF&heeme mebOeeefj$e ueieeves hej~ efJeÛeej keâjW–
(c) bypass and coupling capacitors at the low 1. Parasitic capacitance of transistor
frequency end and device shunt capacitors at š^ebefpemšj keâer hewjeefmeefškeâ Oeeefjlee
the high frequency end / efvecve DeeJe=efòe efmeje hej 2. Coupling capacitance/ Ùegeficele Oeeefjlee
yeeF&heeme leLee Ùegiceve mebOeeefj$e Deewj GÛÛe DeeJe=efòe efmeje 3. Stray capacitance/ mš^s Oeeefjlee
hej ef[JeeFme Mebš mebOeeefj$e ueieeves hej~ 4. Wiring capacitance/ JeeÙeefjbie Oeeefjlee~
(d) device shunt capacitors at the low frequency Which of the above components effectively
end and bypass as well as coupling capacitors control high frequencies?
at the high frequency end / GÛÛe DeeJe=efòe efmejs ceW Ghejesòeâ DeJeÙeJeeW ceW mes keâewve-mee GÛÛe DeeJe=efòeÙeeW keâes
yeeF&heeme kesâ meeLe-meeLe Ùegiceve mebOeeefj$e Deewj efvecve ØeYeeJeer {bie mes efveÙebef$ele keâjlee nw–
DeeJe=efòe efmejs hej ef[JeeFme MeCš mebOeeefj$e ueieeves hej~ (a) 1, 2 and 3 / 1, 2 Deewj 3
831. Consider the following : (b) 1, 2 and 4 / 1, 2 Deewj 4
efvecveefueefKele hej efJeÛeej keâjW– (c) 1, 3 and 4 / 1, 3 Deewj 4
1. Coupling capacitor/ Ùegiceve mebOeeefj$e (d) 2, 3 and 4 / 2, 3 Deewj 4
Electrical 50000 (MCQ) Volume II 625 YCT
835. In a single stage R-C coupled amplifier stage, 3. reduces the amplitude response
what are the phase shifts introduced at lower DeeÙeece Øeefleef›eâÙee keâes keâce keâjlee nw~
and upper 3 dB frequencies, respectively? 4. reduces the number of stages for achieving
Skeâ Skeâue ÛejCe R-C Ùegeficele SchueerheâeÙej ÛejCe ceW, same power gain as compared to R-C coupled
›eâceMe: efveÛeues Deewj Thejer 3dB DeeJe=efòeÙeeW hej hesMe stages/R-C Ùegeficele ÛejCeeW keâer leguevee ceW meceeve Meefòeâ
efkeâÙes peeves Jeeues hesâpe efMeheäš keäÙee nw? ueeYe Øeehle keâjves kesâ efueS ÛejCeeW keâer mebKÙee keâes keâce keâjlee
(a) 45°, 225° nw~
(b) 45°, 135° Of these statements :
(c) 90°, 180° Fve keâLeveeW ceW mes–
(d) 45°, 180° (a) 1 and 2 are correct / 1 Deewj 2 mener nw~
836. In an R-C coupled common emitter amplifier: (b) 2 and 3 are correct / 2 Deewj 3 mener nw~
Skeâ R-C Ùegeficele keâe@ceve Sceeršj SchueerheâeÙej ceW– (c) 3 and 4 are correct / 3 Deewj 4 mener nw~
(a) coupling capacitance affects the high (d) 1 and 4 are correct / 1 Deewj 4 mener nw~
frequency response and bypass capacitance
839. A signal may have frequency components
affects the low frequency response/ Ùegiceve which lie in the range of 0.001 Hz to 10 Hz.
Oeeefjlee GÛÛe DeeJe=efòe Øeefleef›eâÙee keâes ØeYeeefJele keâjleer nw Which one of the following types of couplings
Deewj yeeF&heeme Oeeefjlee keâce DeeJe=efòe Øeefleef›eâÙee keâes ØeYeeefJele should be choosen in a multistage amplifier
keâjleer nw~ designed to amplify the signal?
(b) both coupling and bypass capacitances affect Skeâ efmeiveue ceW DeeJe=efòe Ieškeâ nes mekeâles nQ, pees 0.001
the hf response only / oesveeW Ùegiceve Deewj yeeF&heeme Hz mes 10 Hz lekeâ keâer meercee ceW nesles nw~ efvecveefueefKele
Oeeefjlee kesâJeue hf Øeefleef›eâÙee keâes ØeYeeefJele keâjles nQ~ Øekeâej kesâ Ùegiceve ceW mes efkeâme Skeâ keâes efmeiveue keâes
(c) both coupling and bypass capacitance affect ØeJeefOe&le keâjves kesâ efueS ef[peeFve efkeâÙes ieÙes yengmlejerÙe
the lf response only/ oesveeW Ùegiceve Deewj yeeF&heeme SchueerheâeÙej ceW Ûegvee peevee ÛeeefnS?
Oeeefjlee kesâJeue lf Øeefleef›eâÙee keâes ØeYeeefJele keâjles nQ~ (a) RC coupling / RC Ùegiceve
(d) coupling capacitance affects the lf response (b) Direct coupling / ØelÙe#e Ùegiceve
and the bypass capacitance affects the hf response
Ùegiceve Oeeefjlee, hf Øeefleef›eâÙee keâes ØeYeeefJele keâjlee nw Deewj (c) Transformer coupling / š^ebmeheâe@ce&j Ùegiceve
yeeF&heeme Oeeefjlee hf Øeefleef›eâÙee keâes ØeYeeJeer keâjlee nw~ (d) Double tuned transformer / [yeue šŸetve š^ebmeheâe@ce&j
837. In an RC coupled amplifier, the gain decreases 840. Which one of the following is NOT true of
in the frequency response due to the direct coupled amplifiers?
RC Ùegeficele SchueerheâeÙej ceW, DeeJe=efòe Øeefleef›eâÙee ceW ueeYe ØelÙe#e Ùeg ef i cele Schueer
heâeÙejeW ceW efvecveefueefKele ceW mes
keâce nes peelee nw– keâewve-mee mener veneR nw?
(a) coupling capacitor at low frequency and (a) Low cost / keâce ueeiele
bypass capacitor at high frequency (b) Can amplify high frequency signals
efvecve DeeJe=efòe hej Ùegiceve mebOeeefj$e Deewj GÛÛe DeeJe=efòe hej GÛÛe DeeJe=efòe efmeiveue keâes ØeJeefOe&le keâj mekeâlee nw~
yeeF&heeme mebOeeefj$e kesâ keâejCe~ (c) Can amplify low frequency signals
(b) coupling capacitor at high frequency and efvecve DeeJe=efòe efmeiveue keâes ØeJeefOe&le keâj mekeâlee nw~
bypass capacitor at low frequency (d) Operating point shifts with temperature
GÛÛe DeeJe=efòe hej Ùegiceve mebOeeefj$e Deewj efvecve DeeJe=efòe hej variations / leeheceeve efYeVeleeDeeW kesâ meeLe Dee@hejsefšbie efyevog
yeeF&heeme mebOeeefj$e kesâ keâejCe~
(c) coupling junction capacitance at low mLeeveevleefjle neslee nw~
frequency and coupling capacitor at high 841. The typical frequency response of a two-stage
frequency/efvecve DeeJe=efòe hej Ùegiceve pebkeäMeve Oeeefjlee direct coupled voltage amplifier is as shown in
Deewj GÛÛe DeeJe=efòe hej Ùegiceve mebOeeefj$e kesâ keâejCe~ Skeâ oes ÛejCe ØelÙe#e Ùegeficele SchueerheâeÙej keâer efJeefMe°
(d) device junction capacitor at high frequency DeeJe=efòe Øeefleef›eâÙee kesâ ™he ceW ØeoefMe&le nw–
and coupling capacitor at low frequency
GÛÛe DeeJe=efòe hej ef[JeeFme pebkeäMeve mebOeeefj$e Deewj efvecve
DeeJe=efòe hej Ùegiceve mebOeeefj$e kesâ keâejCe~
838. Consider the following statements :
efvecveefueefKele keâLeveeW hej efJeÛeej keâjW–
Transformer coupling is preferable to RC
coupling because it :
š^ebmeheâe@ce&j Ùegiceve, RC Ùegiceve kesâ efueS yesnlej nw, 842. A common–collector stage has input and
keäÙeeWefkeâ Ùen– output impedances of 1 MΩ and 10 kΩ
1. can also be made to match input and output respectively. Its current gain is:
impedance/Fvehegš Deewj DeeGšhegš ØeefleyeeOeeDeeW mes cesue efkeâmeer keâe@ceve meb«eenkeâ ÛejCe ceW Fvehegš Deewj DeeGšhegš
keâjeves kesâ efueS Yeer yeveeÙee pee mekeâlee nw~ ØeefleyeeOeeSb ›eâceMe: 1 MΩ Deewj 10 kΩ nw~ Fmekeâer Oeeje
2. results in better frequency response ueeYe nw–
yesnlej DeeJe=efòe Øeefleef›eâÙee ceW heefjCeece oslee nw~
Electrical 50000 (MCQ) Volume II 626 YCT
(a) approximately 100 / ueieYeie 100 (c) current shunt feedback/Oeeje MeCš Heâer[yewkeâ~
(b) approximately 50 / ueieYeie 50 (d) voltage shunt feedback/Jeesušlee MeCš Heâer[yewkeâ~
(c) indeterminate from given data 848. Loop gain in a negative feedback amplifier is:
efoS ieS DeeBkeâÌ[s mes DeefveOee&efjle $e+Ceelcekeâ Heâer[yewkeâ ØeJeOe&keâ ceW uethe ueeYe neslee nw–
(d) none of these / FveceW mes keâesF& veneR (a) β
843. Low frequency response of amplifiers is mainly (b) βAV
limited by : (c) –βAV
ØeJeOe&keâ keâer efvecve DeeJe=efòe Devegef›eâÙee cegKÙele: .......... (d) none of these / FveceW mes keâesF& veneR~
kesâ Éeje meerefcele nesleer nw– 849. A darlington amplifier is characterised by:
(a) coupling capacitors / Ùegiceve mebOeeefj$e [eefueËiešve ØeJeOe&keâ keâer efJeMes<elee nw–
(b) bypass capacitors / yeeFheeme mebOeeefj$e (a) very high voltage and current gains
(c) biasing circuit / yeeÙeefmebie heefjheLe
yengle GÛÛe Jeesušlee Deewj Oeeje ueeYe~
(b) very high input resistance and current gain
(d) input and output capacitors
Fvehegš Deewj DeeGšhegš mebOeeefj$e yengle GÛÛe Fvehegš ØeeflejesOe Deewj Oeeje ueeYe~
(c) very low output resistance and current gain
844. Low frequency response of a cascaded CE–
amplifier consisting of two identical stages: yengle efvecve DeeGšhegš ØeeflejesOe Deewj Oeeje ueeYe~
oes meceeve ÛejCe Ùegkeäle keâemkesâ[s[ CE ØeJeOe&keâ keâer efvecve (d) none of these / FveceW mes keâesF& veneR~
DeeJe=efòe Devegef›eâÙee– 850. Introduction of +ve feedback in an amplifier:
(a) is poorer than that of single stage
efkeâmeer ØeJeOe&keâ ceW +ve Heâer[yewkeâ keâe ØeJesMe–
Skeâue ÛejCe mes Kejeye nesleer nw~ (a) increases the voltage gain
(b) is better than that of single stage
Jeesušlee ueeYe yeÌ{elee nw~
Skeâue ÛejCe mes yesnlej nesleer nw~ (b) decreases the voltage gain
(c) is not affected from what it is for a single
Jeesušlee ueeYe Iešelee nw~
stage/Skeâue ÛejCe keäÙee nw Fmemes ØeYeeefJele veneR nesleer nw~ (c) is not possible / mecYeJe veneR nw~
(d) none of these / FveceW mes keâesF& veneR~ (d) initiates oscillations to occur
845. High frequency response of a transformer
oes ueve Meg¤ keâjlee nw~
coupled amplifier is generally limited by: 851. A switch circuit using the transistor is shown in
š^ebmeHeâe@ce&j Ùegeficele ØeJeOe&keâ keâer GÛÛe DeeJe=efòe Devegef›eâÙee the figure.
meeceevÙele: ................. kesâ Éeje meerefcele keâer peeleer nw– š^ebefpemšj keâe GheÙeesie keâjkesâ Skeâ efmJeÛe meefke&âš efÛe$e ceW
(a) transformer's leakage inductance and efoKeeÙee ieÙee nw~
distributed capacitance Assume hFE(min) = 20 and fr = 100 MHz. The
š^ebmeHeâe@ce&j kesâ #ejCe ØesjkeâlJe Deewj efJeleefjle Oeeefjlee~ most dominant speed limitation is brought by
(b) transformer's primary inductance ceeve ueW efkeâ hFE(min) = 20 Deewj fr = 100 MHz.
š^ebmeHeâe@ce&j kesâ ØeeLeefcekeâ ØesjkeâlJe~ meyemes ØecegKe ieefle meercee __________ mes ueeÙee peelee
(c) transformer's leakage inductance only nw~
š^ebmeHeâe@ce&j kesâ kesâJeue #ejCe ØesjkeâlJe~
(d) transformer's winding capacitance only
š^ebmeHeâe@ce&j kesâ kesâJeue JeeFbef[bie Oeeefjlee~
846. Low frequency response of a transformer
coupled amplifier is limited by:
š^ebmeHeâe@ce&j Ùegeficele ØeJeOe&keâ keâer efvecve DeeJe=efòe Devegef›eâÙee
............... kesâ Éeje meerefcele keâer peeleer nw–
(a) rise time /jeFpe šeFce
(a) transformer's leakage inductance
(b) fall time /heâeue šeFce
š^ebmeHeâe@ce&j kesâ #ejCe ØesjkeâlJe~
(c) storage time /mšesjspe šeFce
(b) transformer's primary inductance
š^ebmeHeâe@ce&j kesâ ØeeLeefcekeâ ØesjkeâlJe~ (d) delay time /ef[ues šeFce
(c) resistance associated with transformer 852. In switching devices, gold dopping is used to
windings / š^ebmeHeâe@ce&j JeeFbef[bie mes mebyebefOele ØeeflejesOe~
ef m Jeef Û eb ie GhekeâjCeeW ceW, meesvee [esefhebie keâe GheÙeesie _____
(d) transformer interwinding capacitances efkeâÙee peelee nw~
š^ebmeHeâe@ce&j kesâ FbšjJeeFbef[bie Oeeefjlee~ (a) improve bonding /yeeefv[bie ceW megOeej kesâ efueS
847. A CE amplifier with unbypassed emitter (b) reduce storage time
resistor is an example of: mšesjspe šeFce keâce keâjves kesâ efueS
DeveyeeFheem[ Glmepe&keâ ØeeflejesOekeâ kesâ meeLe Skeâ CE (c) increase the mobility of the carrier
ØeJeOe&keâ ................. keâe GoenjCe nw– Jeenkeâ keâer ieefleMeeruelee yeÌ{eves kesâ efueS
(a) current series feedback/Oeeje ßesCeer Heâer[yewkeâ~ (d) protect the terminals against corrosion
(b) voltage series feedback/Jeesušlee ßesCeer Heâer[yewkeâ~ pebie kesâ efJe®æ šefce&veueeW keâes megjef#ele jKeves kesâ efueS
Electrical 50000 (MCQ) Volume II 627 YCT
853. A transistor is operated as a non-saturated efvecveefueefKele ceW mes keâewve Skeâ š^ebefpemšj yeeÙeefmebie meefke&âš
switch to eliminate : kesâ efueS DeeJeMÙekeâ nw?
Skeâ š^ebefpemšj _______ keâes Kelce keâjves kesâ efueS iewj- 1. Proper zero signal collector current flow.
meble=hle efmJeÛe kesâ ™he ceW mebÛeeefuele neslee nw– GefÛele MetvÙe =efmeiveue keâueskeäšj Oeeje ØeJeen
(a) storage time /mšesjspe šeFce 2. VCE should not fall below 0.5 V for germanium
(b) turn-off time /šve&-Dee@heâ šeFce and 1 V for silicon/ VCE, pecexefveÙece kesâ efueS 0.5 V
(c) turn on time /šve&-Dee@ve šeFce Deewj efmeefuekeâe@ve kesâ efueS 1V mes veerÛes veneR nesvee ÛeeefnS~
3. Ensure stabilization of operating point
(d) delay time /ef[ues šeFce
Dee@hejsefšbie efyevog keâe efmLejerkeâjCe megevf eef§ele keâjvee~
854. For a number of transistor switches, which are
direct-coupled 4. Loading to the source/Œeesle kesâ efueS ueesefE[ie
keâF& š^ebefpemšj efmJeÛeeW kesâ efueS keâewve ØelÙe#e Ùegeficele nesles (a) 1, 2 and 3 only /kesâJeue 1, 2 Deewj 3
nQ? (b) 1, 2 and 4 only /kesâJeue 1, 2 Deewj 4
(c) 3 and 4 only / kesâJeue 3 Deewj 4
(a) both rise time and fall time increases.
jeFpe šeFce Deewj heâeue šeFce oesveeW yeÌ{les nQ~ (d) 1, 2, 3 and 4 / 1, 2, 3 Deewj 4
(b) rise time increase and fall time decreases 859. Biasing is used in transition amplifier to
yeeÙeefmebie keâe GheÙeesie š^ebefpeMeve SchueerheâeÙej ceW efkeâÙee
jeFpe šeFce yeÌ{lee nw Deewj heâeue šeFce Iešlee nw~
(c) rise time decreases and fall time increases
peelee nw–
1. stabilize the operating point against temperature
jeFpe šeFce Iešlee nw Deewj heâeue šeFce yeÌ{lee nw~ variations./leeheceeve efYeVeleeDeeW kesâ efJe®æ Dee@hejsefšbie efyebog keâes
(d) none of the above/Ghejesòeâ ceW mes keâesF& veneR~
efmLej keâjves kesâ efueS~
855. Conversion efficiency of a single-stage 2. place the operating point in the linear region of
amplifier is given by : the characteristics./Dee@hejsefšbie efyevog keâes efJeMes<eleeDeeW kesâ
Skeâ Skeâue ÛejCe SchueerheâeÙej keâer ™heeblejCe o#elee jwefKekeâ #es$e ceW jKeves kesâ efueS~
_________ Éeje efoÙee peelee nw– 3. make α, β and ICO of the transistor independent
ac Power delivered to load of temperature variations./leeheceeve heefjJele&ve mes mJeleb$e,
(a)
dc power delivered to the active device š^ebefpemšj kesâ α, β Deewj IC0 yeveeves kesâ efueS~
4. reduce distortion and increase dynamic range.
uees[ keâes Øeoòe S.meer. hee@Jej efJeke=âefle keâes keâce keâjves Deewj ieefleMeerue hejeme keâes yeÌ{eves kesâ
meef›eâÙe Ieškeâ keâes Øeoòe [er.meer. hee@Jej efueS~
ac Power at the output (a) 1, 2, 3 and 4 / 1, 2, 3 Deewj 4
(b)
dc power at the input (b) 1, 2 and 4 only / 1, 2 Deewj 4 kesâJeue
(c) 1, 2 and 3 only / kesâJeue 1, 2 Deewj 4
DeeGšhegš hej S.meer. hee@Jej (d) 2, 3 and 4 only / kesâJeue 2, 3 Deewj 4
Fvehegš hej [er.meer. hee@Jej 860. What is the most noticeable effect of a small
output voltage increase in temperature in the common emitter
(c) connected BJT?
input voltage meeceevÙe Sceeršj mes pegÌ[s ngS BJT ceW leeheceeve keâer LeesÌ[er
DeeGšhegš Jeesušspe meer Je=efæ keâe meyemes DeefOekeâ OÙeeve osves ÙeesiÙe ØeYeeJe
Fvehegš Jeesušspe keäÙee nw?
(d) None of the above / Ghejesòeâ ceW mes keâesF& veneR (a) Increase in ICEO / ICEO cesW Je=eæ
f
(b) Increase in output resistance
856. The BJT amplifier which offers highest input
impedance and least voltage gain is : DeeGšhegš ØeeflejesOe ceW Je=eæ
f
BJT SchueerheâeÙej pees GÛÛelece Fvehegš ØeefleyeeOee Deewj (c) Decrease in forward current gain
De«e Oeeje ueeYe cebs keâceer~
keâce mes keâce Jeesušspe ueeYe Øeoeve keâjlee nw– (d) Increase in forward current gain
(a) CE De«e Oeeje ueeYe ceW Je=eæ
f
(b) CB 861. In the case of BJT amplifier, bias stability is
(c) CC achieved by
(d) Cascade amplifier/kewâmkesâ[ SchueerheâeÙej BJT SchueerheâeÙej kesâ ceeceues ceW, yeeÙeme efmLejlee Éeje
857. In an amplifier, variation in β causes Øeehle keâer peeleer nw–
Skeâ SchueerheâeÙej ceW, β ceW efYeVelee …….. keâe keâejCe (a) keeping the base current constant
DeeOeej Oeeje keâes efveÙele jKekeâj~
yevelee nw– (b) changing the base current order to keep IC and
(a) bias unstability/yeeÙeme DeefmLejlee VCE constant / Ic Deewj VCE keâes efveÙele jKeves kesâ
(b) bias stability/yeeÙeme efmLejlee efueS, DeeOeej Oeeje ›eâce keâes yeouekeâj~
(c) zero bias /MetvÙe yeeÙeme (c) keeping the temperature constant
(d) None of the above/Ghejesòeâ ceW mes keâesF& veneR leeheceeve keâes efveÙele jKekeâj
858. Which one of the following are essentials of a (d) keeping the temperature and base current
transistor biasing circuit? constant /leeheceeve Deewj DeeOeej Oeeje keâes efveÙele jKekeâj
Electrical 50000 (MCQ) Volume II 628 YCT
862. The Q-point in a voltage amplifier is selected in (b) shift the operation from active mode of
the middle of the active region so that saturation mode/meble=ehf le cees[ kesâ meef›eâÙe cees[ mes
Skeâ Jeesušspe SchueerheâeÙej ceW Q-efyebog keâes meef›eâÙe #es$e Dee@hejsMeve keâe mLeeveeblejCe~
kesâ yeerÛe ceW Ûegvee peelee nw, leeefkeâ– (c) shift the operation from saturation mode of
(a) it may give distortionless output cut-off mode./keâš-Dee@heâ cees[ kesâ meble=efhle cees[ mes
Ùen efJe™heCe jefnle DeeGšhegš os mekesâ~ Dee@hejsMeve cees[ keâe mLeeveeblejCe~
(b) it may need a small dc voltage /Fmes Skeâ keâce (d) shift the operation from cut-off mode to active
[er.meer. Jeesušspe keâer DeeJeMÙekeâlee nes~ mode/keâš-Dee@heâ cees[ mes meef›eâÙe cees[ ceW Dee@hejsMeve keâe
(c) the operating point becomes very stable mLeeveeblejCe~
Dee@hejsefšbie efyevog yengle efmLej nes peeS~ *867. A biasing circuit has a stability factor of 40. If
(d) less number of resistors is required due to temperature change, ICO changes by 1
ØeeflejesOeeW keâer keâce mebKÙee keâer DeeJeMÙekeâlee nes~ µA, then IC will change by:
863. If in a transistor circuit IB remains constant but Skeâ yeeÙeefmebie meefke&âš ceW efmLejlee keâejkeâ 40 nw, Ùeefo
β increases : leeheceeve heefjJele&ve kesâ keâejCe, ICO, 1 µA ceW yeoue peelee
Ùeefo Skeâ š^ebefpemšj meefke&âš ceW IB efveÙele jnlee nw, uesefkeâve
nw, leye IC _____Éeje yeoue peeSiee–
β ceW Je=efæ nesleer nw, lees–
(a) 20 µA
(a) operating point will go down
(b) 40 µA
Dee@hejsefšbie efyebog veerÛes Ûeuee peeÙesiee~ (c) 80 µA
(b) operating point will go up
(d) none of these / FveceW mes keâesF& veneR
Dee@hejsefšbie efyebog Thej peeSiee~
(c) operating point will not change its position 868. Fixed biasing of CE configuration is shown in
the figure. The current stabilization factor for
Dee@hejsefšbie efyebog Deheveer efmLeefle veneR yeouesiee
(d) operating point will shift as per value of base R
RB << βRE is Si = 1 + B
current IB / Dee@hejsefšbie efyebog, DeeOeej Oeeje IB kesâ ceeve RE
kesâ Devegmeej mLeeve yeouesiee~ For RB << RE. What is the voltage
864. The stability factor S in a bipolar junction stabilization factor SV?
transistor is : CE efJevÙeeme keâer efveef§ele yeeÙeefmebie keâes efÛe$e ceW efoKeeÙee
Skeâ efÉOeÇgJeerÙe pebkeäMeve š^ebefpemšj ceW efmLejlee keâejkeâ S ieÙee nw–
nw– RB
RB << β RE keâs efueS Si = 1 + nw
1+ β RE
(a)
dI Oeeje efmLejerkeâjCe keâejkeâ–
1− β B RB << RE kesâ efueS, Jeesušspe efmLejerkeâjCe keâejkeâ SV
d IC
keäÙee nesiee?
1+ β d IB
(b) 1 −
1 − β d I C
d I
(c) (1 + β) 1 − β B
d I C
β −1
(d)
d I B
1 − β
d IC RE R
865. Variation in β in a BJT can cause a fixed bias (a) = (b) = B
circuit to go RB + RE RE
Skeâ BJT ceW β ceW yeoueeJe Skeâ efveef§ele yeeÙeme meefke&âš 1 RE
kesâ keâejCe pee mekeâlee nw– (c) = − (d) = −
RE RB + RE
(a) into active mode of operation from saturation
mode /meble=efhle cees[ mes mebÛeeueve kesâ meef›eâÙe cees[ ceW 869. The emitter resistor RE is bypassed by a
capacitor in order to :
(b) out of active mode /meef›eâÙe cees[ mes yeenj Sceeršj ØeeflejesOe RE keâes Skeâ mebOeeefj$e Éeje yeeF&heeme
(c) out of saturation / meble=efhle mes yeenj efkeâÙee peelee nw–
(d) into cutoff mode from active mode operation
(a) stabilize the Q-point
Dee@hejsMeve kesâ meef›eâÙe cees[ mes keâšDee@heâ cees[ ceW
866. The increase in value of β of transistor can Q-efyebog keâes efmLej keâjves kesâ efueS
cause the fixed bias circuit to : (b) cause thermal run away / Lece&ue jveJes keâs keâejCe
š^ebefpemšj kesâ β kesâ ceeve ceW Je=efæ kesâ keâejCe efveef§ele (c) increase the voltage gain
yeeÙeme meefke&âš nes mekeâlee nw– Jeesušspe ueeYe ceW Je=efæ keâjves kesâ efueS
(a) shift from saturation region to active region (d) reduce the voltage gain
meble=efhle #es$e mes meef›eâÙe #es$e ceW mLeeveeblejCe~ Jeesušspe ueeYe keâce keâjves kesâ efueS
Electrical 50000 (MCQ) Volume II 629 YCT
870. Introducing a resistor in the emitter of a 1. heating of the transistor
common amplifier stabilizes the dc operating š^ebefpemšj kesâ nerefšbie kesâ keâejCe
point against variations in : 2. change in β due to increase in temperature.
Skeâ meeceevÙe SchueerheâeÙej kesâ Sceeršj ceW Skeâ ØeeflejesOe leeheceeve ceW Je=efæ kesâ keâejCe β ceW heefjJele&ve kesâ keâejCe
ueieeves mes ……ceW efYeVelee kesâ efJe®æ [er.meer. Dee@hejsefšbie 3. change in reverse collector saturation current
efyevog keâes efmLej keâjlee nw– due to rise in temperature/ leeheceeve ceW Je=efæ kesâ keâejCe
(a) only the temperature /kesâJeue leeheceeve efjJeme& keâueskeäšj mesÛegjsMeve Oeeje ceW heefjJele&ve kesâ keâejCe~
(b) only the β of the transistor/kesâJeue š^ebefpemšj keâe β 4. base emitter voltage VBE which decrease with
(c) both temperature and β /leeheceeve Deewj β oesveeW rise in temperature/yesme Sceeršj Jeesušspe VBE pees leeheceeve
(d) none of the above / Ghejesòeâ ceW mes keâesF& veneR ceW Je=efæ kesâ meeLe Iešlee nw kesâ keâejCe~
871. If the emitter resistance in a common-emitter Which of the above statements is/are correct?
voltage amplifier is not bypassed, it will : TheÙeg&òeâ keâLeveeW ceW mes keâewve-mee keâLeve mener nw~
Ùeefo Skeâ meeceevÙe-Sceeršj Jeesušspe SchueerheâeÙej ceW (a) 1 and 2 / 1 Deewj 2
Sceeršj ØeeflejesOe keâes yeeF&heeme veneR efkeâÙee peelee nw, lees (b) 2 and 3 / 2 Deewj 3
Ùen– (c) 3 only / kesâJeue 3
(a) reduce both the voltage gain and the input (d) 4 only / kesâJeue 4
impedance/Jeesušspe ueeYe Deewj Fvehegš ØeefleyeeOee oesveeW *875. The maximum junction temperature of a
keâes keâce keâjsiee~ transistor is 150°C and the ambient
(b) reduce the voltage gain and increase the input temperature is 25°C. If the total thermal
impedance/Jeesušspe ueeYe ceW keâceer Deewj Fvehegš impedance is 1°C/W, what is the maximum
ØeefleyeeOee ceW Je=efæ keâjsiee~ power dissipation?
(c) increase the voltage gain and reduce the input Skeâ š^ebefpemšj keâe DeefOekeâlece pebkeäMeve leeheceeve 150°C
imedance/Jeesušspe ueeYe ceW Je=efæ Deewj Fvehegš ØeefleyeeOee Deew j heefjJesMe keâe leeheceeve 25°C nw~ Ùeefo kegâue leeheerÙe
ceW keâceer keâjsiee~ Øeef l eyeeOee 1° C/W nw, lees DeefOekeâlece Meefòeâ DeheJÙeÙe
(d) increase both the voltage gain and the input keäÙee nw?
impedance/Jeesušspe ueeYe Deewj Fvehegš ØeefleyeeOee oesveeW
ceW Je=efæ keâjsiee~ (a) 1 W
175
872. The voltage divider bias circuit is used in (b) 175W
amplifier quite often because it :
Jeesušspe ef[JeeF[j yeeÙeme meefke&âš, SchueerheâeÙej ceW (c) 125 W
Dekeämej GheÙeesie efkeâÙee peelee nw, keäÙeeWefkeâ Ùen– 1
(d) W
(a) limits the ac signal going to the base/DeeOeej hej 125
peeves Jeeues S.meer. efmeiveue keâes meerefcele keâjlee nw~ 876. The thermal runaway in a CE transistor
(b) makes the operating point almost indepedence amplifier can be prevented by biasing the
of β transistor in such a manner that :
Dee@hejsefšbie efyebog keâes ueieYeie β mes mJeleb$e keâjlee nw~ Skeâ CE š^ebefpemšj SchueerheâeÙej ceW Lece&ue jveJes keâes efkeâme
(c) reduces the dc base current
[er.meer. DeeOeej Oeeje keâes keâce keâjlee nw~ lejn mes š^ebefpemšj keâes yeeÙeefmebie keâjkesâ jeskeâe pee mekeâlee
(d) reduces the cost of the circuit nw, efkeâ–
meefke&âš keâer ueeiele keâes keâce keâjlee nw~ VCC
873. A Transistor circuit employing base bias with (a) VCE >
2
collector feedback has greater stability than the
VCC
one without feedback. It is because of : (b) VCE <
keâueskeäšj heâer[yewkeâ kesâ meeLe yesme yeeÙeme keâes efveÙeesefpele 2
Skeâ š^ebefpemšj meefkeâ&š ceW heâer[yewkeâ kesâ efyevee Skeâ mes (c) VCE =
VCC
DeefOekeâ efmLejlee nw~ Fmekeâer Jepen nw– 2
(a) reduction of IC in magnitude (d) VCE = 0
heefjceeCe ceW IC keâer keâceer~ *877. A BJT is biased with a power supply of 12 V.
(b) reduction of VBE / VBE keâer keâceer For minimum heat dissipation, the drop across
(c) IC becoming independent of β the transistor will be
IC, β mes mJeleb$e nes jne nw~ Skeâ BJT 12V keâer efyepeueer Deehetefle& kesâ meeLe yeeÙem[ nw~
(d) negative feedback effect vÙetvelece T<cee DeheJÙeÙe kesâ efueS, š^eeb fpemšj kesâ S›eâe@me
$e+Ceelcekeâ heâer[yewkeâ ØeYeeJe [^ehe nesiee:
874. Thermal runaway in a transistor biased in the
active region is due to : (a) 6V
meef›eâÙe #es$e ceW yeeÙem[ Skeâ š^ebefpemšj ceW Lece&ue jveJes (b) 9V
________ neslee nw– (c) 12 V
(d) > 9V but < 12V / > 9V uesefkeâve < 12V
Electrical 50000 (MCQ) Volume II 630 YCT
878. An ideal amplifier : *883. The transistor circuit shown uses a silicon
Skeâ DeeoMe& SchueerheâeÙej– transistor with VBE = 0.7 V, IC ≈ IE and a dc
(a) has + ve feedback / ceW (+ ve) heâer[yewkeâ neslee nw~ current gain of 100. The value of V0 is :
(b) gives uniform frequency response efoKeeÙee ieÙee š^ebefpemšj heefjheLe VBE = 0.7 V, IC ≈ IE
Skeâ meceeve DeeJe=efòe Øeefleef›eâÙee oslee nw~ Deewj 100 kesâ dc Oeeje ueeYe kesâ meeLe Skeâ efmeefuekeâe@ve
(c) has infinite voltage gain š^ebefpemšj keâe GheÙeesie keâjlee nw~ V0 keâe ceeve nw–
ceW Deveble Jeesušspe ueeYe neslee nw~
(d) responds only to signals at its input
terminals/kesâJeue Fmekesâ Fvehegš šefce&veueeW hej mebkesâleeW keâe
peJeeye oslee nw~
879. A transistor is said to be useful to be
configured as an amplifier when its β is:
Skeâ š^ebefpemšj keâes Skeâ SchueerheâeÙej kesâ ™he ceW
keâe@efvheâiej keâjves hej Ùen GheÙeesieer ceevee peelee nw, peye
Fmekeâe β neslee nw–
(a) less than 0 / 0 mes keâce (a) 4.65 V
(b) between 0 and 1 / 0 Deewj 1 kesâ yeerÛe (b) 5 V
(c) 6.3 V
(c) between 1 and 50 / 1 Deewj 50 kesâ yeerÛe (d) 7.32 V
(d) > 50 *884. In the circuit shown in the figure, the current
880. In voltage amplifier the load resistance should gain (β) of the ideal transistor is 10. The
be operating point of the transistor (Vce, Ic) is
Jeesušspe SchueerheâeÙejeW ceW uees[ ØeeflejesOe nesvee ÛeeefnS– efÛe$e ceW efoKeeÙes ieÙes heefjheLe ceW Skeâ DeeoMe& š^ebefpemšj
(a) as large as possible / efpelevee mebYeJe nes Glevee yeÌ[e keâe Oeeje ueeYe (β) 10 nw~ š^ebefpemšj keâe Dee@hejsefšbie efyebog
(b) as small as possible / efpelevee mebYeJe nes Glevee Úesše
(Vce, IC) nw–
(c) equal to output impedance
DeeGšhegš ØeefleyeeOee kesâ yejeyej
(d) equal to input impedance/Fvehegš ØeefleyeeOee kesâ yejeyej
881. The base to emitter voltage VBE in a transistor
in the forward bias decrease with the increase
in temperature at the following rate :
De«e yeeÙeme ceW š^ebefpemšj ceW yesme mes Sceeršj Jeesušspe
(VBE) efvecve ceW mes efkeâme oj hej leeheceeve Je=efæ kesâ meeLe
Iešlee nw–
(a) 25 m V/°C (a) (40 V, 4A)
(b) 0.25 V/°C (b) (40 V, 5A)
(c) 2.5 mV/°C (c) (0 V, 4A)
(d) 0.6 mV/°C (d) (15 V, 4A)
882. Consider the following statements : *885. A silicon transistor with VBE sat = 0.8 V, βdc =
To draw ac equivalent circuit of a transistor, 100 and VCE sat = 0.2 V is used in the circuit
all shown in given figure.
efvecveefueefKele keâLeveeW hej efJeÛeej keâjW- What is the minimum value of RC for which
transistor is in saturation?
Skeâ š^eBefpemšj keâe S.meer. mecekeâ#e heefjheLe KeeRÛeves kesâ VBE sat = 0.8 V, βdc = 100 Deewj VCE sat = 0.2 V kesâ
efueS, meYeer– meeLe Skeâ efmeefuekeâe@ve š^ebefpemšj keâe GheÙeesie efoÙes ieÙes
1. dc sources are shorted efÛe$e ceW efoKeeÙes ieÙes meefke&âš ceW efkeâÙee peelee nw~ RC keâe
[er.meer. ŒeesleeW keâes Mee@š& keâj efoÙee peelee nw~
vÙetvelece ceeve keäÙee nw, efpemekesâ efueS š^ebefpemšj mesÛegjsMeve
2. ac sources are shorted
S.meer. ŒeesleeW keâes Mee@š& keâj efoÙee peelee nw~ (meble=efhle) ceW nw?
3. dc sources are opened
[er.meer. ŒeesleeW keâes Keesue efoÙee peelee nw~
4. ac sources are connected to dc sources
S.meer. ŒeesleeW keâes, [er.meer. ŒeesleeW mes peesÌ[ efoÙee peelee nw~
Which of the above statements is /are correct?
Ghejesòeâ keâLeveeW ceW mes keâewve-mee mener nw, nQ?
(a) 2 and 4 / 2 Deewj 4
(b) 1 and 2 / 1 Deewj 2
(c) 1 only / kesâJeue 1 (a) 4286 Ω (b) 4667 Ω
(d) 3 and 4 / 3 Deewj 4 (c) 500 Ω (d) 1000Ω
Electrical 50000 (MCQ) Volume II 631 YCT
886. In the transistor circuit shown below, the 889. Operating point shift can occur in an amplifier
collector–to-ground voltage is + 20V. The due to which one of the following?
possible condition is efvecve ceW mes efkeâme Skeâ kesâ keâejCe, SchueerheâeÙej ceW
veerÛes efoKeeÙes ieÙes š^ebefpemšj meefke&âš ceW, keâueskeäšj-mes-
«eeGb[ Jeesušspe + 20V nw~ mebYeJe efmLeefle nw– Dee@hejsefšbie efyebog efJemLeeheve nes mekeâlee nw?
(a) 43
(b) 92
(c) 121
(d) 129
*1149.The magnitude of the mid-band voltage gain of
the circuit shown in figure is (assuming hfe of
the transistor to be 100) :
efÛe$e ceW efoKeeÙes ieÙes meefke&âš kesâ ceOÙe-yeQ[ Jeesušspe ueeYe
keâe heefjceeCe nw, (ceevee š^ebefpemšj keâe hfe = 100 nw~)–
Electrical 50000 (MCQ) Volume II 656 YCT
(b) The Early effect starts as soon as punch
through occurs in a transistor
pewmes š^ebefpemšj ceW hebÛe LeÇt neslee nw~ Jewmes ner Deueea Fhesâkeäš
Meg™ nes peelee nw~
(c) The small signal current gain hfe = large
signal current gain hFE when ∂hFE / ∂I C = 0
keâce efmeiveue Oeeje ueeYe hfe = DeefOekeâ efmeiveue Oeeje ueeYe
hFE peye ∂hFE / ∂I C = 0 .
(d) In the CE mode, a transistor can be cutoff by
reducing IB to zero / CE cees[ ceW, š^ebefpemšj IB mes MetvÙe
lekeâ keâce keâjkesâ keâš-Dee@heâ nes mekeâlee nw~
1153. The set of transistor characteristics that
enables α to be determined directly from the
(a) 1 (b) 10 slope is .......... characteristics
(c) 20 (d) 100 š^ ebefpemšj efJeMes<eleeDeeW keâe mesš pees α keâes {ueeve mes meerOes
*1150.Consider a silicon transistor connected as a
common emitter amplifier as shown below. The efveOee&efjle keâjves ceW me#ece yeveelee nw, Jen efJeMes<elee nw-
quiescent collector voltage of the circuit is (a) common emitter transfer/ keâe@ceve Sceeršj š^ebmeheâj
approximately. (b) common emitter output/ keâe@ceve Sceeršj DeeGšhegš
Skeâ efmeefuekeâe@ve š^ebefpemšj keâes Skeâ keâe@ceve Sceeršj (c) common base transfer/ keâe@ceve yesme š^ebmeheâj
SchueerheâeÙej kesâ ™he ceW keâveskeäš efkeâÙee ieÙee nw, pewmee efkeâ (d) common base input/ keâe@ceve yesme Fvehegš
veerÛes efoKeeÙee ieÙee nw~ meefke&âš keâe Meeble keâueskeäšj 1154. When a common emitter transistor is cut off
Jeesušspe ueieYeie nw– which of the following happens?
peye keâe@ceve Glmepe&keâ š^ebefpemšj keâš-Dee@heâ nes, lees efvecve
ceW mes keäÙee nesiee?
(a) Maximum voltage appears across the
collector/keâueskeäšj kesâ S›eâe@me DeefOekeâlece Jeesušlee
Øeleerle neslee nw~
(b) Maximum collector current flows
DeefOekeâlece meb«eenkeâ Oeeje ØeJeeefnle nesleer nw~
(c) Minimum voltage appears across the collector
meb«eenkeâ kesâ S›eâe@me vÙetvelece Jeesušlee ØeoefMe&le nesleer nw~
(d) Maximum voltage appears across the load
resistor
Yeej ØeeflejesOekeâ kesâ S›eâe@me DeefOekeâlece Jeesušlee Øekeâš nesleer
nw~
(a) 6.67 V 1155. In amplifier circuit, biasing of transistor is
(b) 10 V necessary to
(c) 14 V ØeJeOe&keâ heefjheLe ceW, š^ebefpemšj keâer yeeÙeefmebie DeeJeMÙekeâ
(d) 20 V nw–
1151. Which one of the following is not considered as (a) fix the value of current amplification
a characteristics of CE amplifier? Oeeje ØeJeOe&ve kesâ ceeve keâes efveefMÛele keâjves kesâ efueS
efvecveefueefKele ceW mes efkeâme Skeâ keâes CE SchueerheâeÙej keâer (b) establish suitable DC working conditions
efJeMes<elee kesâ ™he ceW veneR ceevee peelee nw? GheÙegòeâ [ermeer keâeÙe&keâejer efmLeefle kesâ efueS
(a) Large current gain / yeÌ[e Oeeje ueeYe (c) ensure that transistor is saturated
(b) Output voltage phase shift of 90° efveefMÛele keâjvee efkeâ š^ebefpemšj meble=hle nw
90° keâe DeeGšhegš Jeesušspe hesâpe efMeheäš (d) ensure that transistor is cut-off
(c) Output voltage phase shift of 180°
ef veefMÛele keâjvee efkeâ š^ebefpemšj keâš-Dee@heâ nw~
1156. A transistor-terminal current is positive when
180° keâe DeeGšhegš Jeesušspe hesâpe efMeheäš the
(d) Large power gain / yeÌ[e Meefòeâ ueeYe~ š^ebefpemšj-šefce&veue Oeeje Oeveelcekeâ nesleer nw, peye–
1152. Which one of the following statements is (a) current is due to flow of electrons
correct in respect of a BJT? Oeeje, Fueskeäš^e@ve kesâ ØeJeen kesâ keâejCe nesleer nw~
BJT kesâ mebyebOe ceW efvecveefueefKele ceW mes keâewve-mee keâLeve (b) current is due to flow of holes
mener nw? Oeeje, nesume kesâ ØeJeen kesâ keâejCe nesleer nw~
(a) Avalanche multiplication starts when the (c) electrons flow into the transistor at the
reverse biased collector base voltage VCB terminal
equals the avalanche breakdown voltage / šefce&veue hej Fueskeäš^e@ve š^ebefpemšj ceW ØeJeen keâjles nQ~
SJeuee@vÛes iegCeve leye Meg™ neslee nw, peye efjJeme& yeeÙem[ (d) electrons flow out of the transistor at the
keâueskeäšj yesme Jeesušspe VCB SJeuee@vÛes yeÇskeâ[eGve Jeesušspe terminal
kesâ yejeyej nesleer nw~ šefce&veue hej Fueskeäš^e@ve, š^ebefpemšj kesâ yeenj ØeJeeefnle nesles nQ~
Electrical 50000 (MCQ) Volume II 657 YCT
1157. The most noticeable effect of a small increase in Skeâ Dee@ef[Ùees ØeJeOe&keâ ceW Dee@ef[Ùees efmeiveue efJeke=âle nes
temperature in the CE transistor is the– peeles nQ Deewj FmeefueS Ùen mecePevee cegefMkeâue neslee nw efkeâ
CE š^ebefpemšj ceW leeheceeve ceW Lees[
Ì er meer Je=efæ keâe meyemes peye A.C. Fvehegš Oeeje DeeGšhegš keâes [^eFJe keâjves kesâ
DeefOekeâ OÙeeve osves ÙeesiÙe ØeYeeJe neslee nw– efueS keâeHeâer yeÌ[e nw–
(a) increase in the A.C. current gain
(a) saturation only / kesâJeue meble=hle
A.C. Oeeje ueeYe ceW Je=efæ
(b) decrease in the A.C. current gain (b) cut-off only / kesâJeue keâš-Dee@Heâ
A.C. Oeeje ueeYe ceW keâceer (c) either saturation or cut-off
(c) increase in ICEO/ ICEO ceW Je=efæ
Ùee lees meble=hle Ùee lees keâš-Dee@Heâ
(d) a value off the load line
(d) increase in the output resistance
DeeGšhegš ØeeflejesOe ceW Je=efæ Yeej ueeFve keâe ceeve
1163. A CE amplifier is characterised by:
1158. The phenomenon known as ‘‘Early Effect'' in a Skeâ CE ØeJeOe&keâ .................. kesâ Éeje efJeMes<eerke=âle
bipolar transistor refers to a reduction of the ef keâÙee peelee nw–
effective base width caused by
efÉ-OegÇJeerÙe š^ebefpemšj ceW 'Early Effect' kesâ veece mes (a) low voltage gain / efvecve Jeesušlee ueeYe
peeveer peeves Jeeueer Iešvee ………… kesâ keâejCe ØeYeeJeer (b) moderate power gain / ceOÙece Meefkeäle ueeYe
DeeOeej keâer ÛeewÌ[eF& keâer keâceer keâes meboefYe&le keâjleer nw~ (c) signal phase reversal / efmeiveue Hesâ]pe JÙegl›eâce
(d) very high output impedance
(a) electron-hole recombination at the base/ DeeOeej
yengle GÛÛe DeeGšhegš ØeefleyeeOee
hej Fueskeäš^e@ve-nesue hegvemeËÙeespeve 1164. A class–A amplifier is that in which:
(b) the reverse biasing of the base-collector Skeâ Jeie&-A ØeJeOe&keâ Jen neslee nw efpemeceW–
junction/ DeeOeej-meb«eenkeâ mebefOe keâer efjJeme& yeeÙeefmebie (a) base is biased to cut-off
(c) the forward biasing of emitter-base junction/ DeeOeej, keâš-Dee@Heâ mes yeeÙem[ nw~
Glmepe&keâ-DeeOeej mebefOe keâer heâe@jJe[& yeeÙeefmebie (b) IC flows most of the time
(d) the early removal of stored base charge DeefOekeâlej meceÙe IC yenleer nw~
during saturation-to-cutoff switching/ meble=hle mes (c) IE flows all the time
keâš-Dee@heâ efmJeefÛebie kesâ oewjeve meb«eefnle DeeOeej DeeJesMe keâe nj meceÙe IE yenleer nw~
lelkeâeue efve<keâemeve (d) VC often rises to VCC
1159. The DC current gain (β) of a BJT is 50. VC ØeeÙe: VCC lekeâ yeÌ{lee nw~
Assuming that the emitter junction efficiency is 1165. Class-A amplifier is used when :
0.995, The base transport factor is Jeie&-A ØeJeOe&keâ ØeÙegkeäle efkeâÙee peelee nw, peye–
BJT keâe DC Oeeje ueeYe (β) 50 nw~ Ùen ceeveles ngS efkeâ (a) no phase inversion is required
Glmepe&keâ mebefOe o#elee 0.995 nw, leye DeeOeej š^ebmeheesš& keâesF& keâuee Guešvee DeeJeMÙekeâ veneR neslee nw~
hewâkeäšj nw– (b) highest voltage gain is required
(a) 0.980 (b) 0.985 GÛÛelece Jeesušlee ueeYe DeeJeMÙekeâ neslee nw~
(c) 0.990 (d) 0995 (c) dc voltages are to be amplified
1160. Regarding improvements obtained by using dc Jeesušlee ØeJeefOe&le efkeâÙee peevee nes~
negative voltage feedback which statement is (d) minimum distortion is desired
false? vÙetvelece efJe¤heCe JeebefÚle nes~
$e+Ceelcekeâ Jeesušlee Heâer[yewkeâ keâe ØeÙeesie keâjkesâ Øeehle 1166. In a0 class-A amplifier, conduction extends over
mebMeesOeve kesâ mecyevOe ceW keâewve-mee keâLeve ieuele nw? 360 because Q-point is :
(a) increased gain stability / yeÌ{er ngF& ueeYe mLeeefÙelJe Skeâ Jeie&-A ØeJeOe&keâ ceW Ûeeueve 3600 lekeâ neslee nw,
(b) increased bandwidth / yeÌ{er ngF& yewC[ ÛeewÌ[eF& keäÙeeWefkeâ Q-efyevog ...........
(c) increased noise / yeÌ{e ngDee Meesj (a) located on load line
uees[ ueeFve hej efmLele neslee nw~
(d) decreased distortion / yeÌ{er ngF& efJe¤heCe (b) located near saturation point
1161. An amplifier has a bandwidth of 20 kHz and a meble=hle efyevog kesâ heeme efmLele neslee nw~
midband gain of 50 without feedback. If a
(c) centered on load line
negative feedback of 1% is applied, than
bandwidth with feedback is –kHz. uees[ ueeFve hej kesâefvõle neslee nw~
efkeâmeer ØeJeOe&keâ keâer yewC[ ÛeewÌ[eF& 20 kHz nw Deewj efyevee (d) located at or near cut-off point
Heâer[yewkeâ kesâ ceOÙe yewC[ ueeYe 50 nw Ùeefo 1³ keâe keâš-Dee@Heâ efyebog hej Ùee Gmekesâ heeme efmLele neslee nw~
$e+Ceelcekeâ Heâer[yewkeâ ØeÙegkeäle efkeâÙee peelee nw lees Heâer[yewkeâ 1167. In a class-A amplifier, worst-case condition
occurs with:
kesâ meeLe yewC[ ÛeewÌ[eF& ............... kHz nw Skeâ Jeie&-A ØeJeOe&keâ ceW.........kesâ meeLe Kejeye efmLeefle nesleer
(a) 13.3 (b) 30 nw–
(c) 10 (d) 40
1162. In an audio amplifier, audio signals become (a) zero signal input / MetvÙe efmeiveue Fvehegš
garbled and hence difficult to understand when (b) maximum signal input / DeefOekeâlece efmeiveue Fvehegš
ac input current is large enough to drive the (c) high load resistance / GÛÛe Yeej ØeeflejesOe
output to: (d) transformer coupling / š^ebmeHeâe@ce&j Ùegiceve
Electrical 50000 (MCQ) Volume II 658 YCT
1168. The output of a class-B amplifier: (c) the logarithmic increase in its output power
Jeie&-B ØeJeOe&keâ keâe DeeGšhegš– Fmekesâ DeeGšhegš Meefkeäle ceW ueIegiegCekeâerÙe Je=efæ
(a) is distortion-free / efJe¤heCe cegkeäle neslee nw~ (d) the Miller effect/efceuej ØeYeeJe
(b) consists of positive half-cycles only 1174. If two stages of a cascaded amplifier have
kesâJeue Oeveelcekeâ DeOe&Ûe›eâ ceW neslee nw~ decibel gains of 60 and 30, then over-all gain is–
(c) is like the output of a full-wave rectifier dB:
Skeâ hetCe& lejbie efo<škeâejer keâer lejn neslee nw~ Ùeefo keâemkesâ[ ØeJeOe&keâ kesâ oes ÛejCeeW keâe [sefmeyeue ueeYe
(d) comprises short-duration current pulses 60 Deewj 30 nw lees mechetCe& ueeYe ............ dB nw–
Fmecebs Úesšer DeJeefOe keâer Oeeje heume Meeefceue nw~ (a) 90 (b) 1800
1169. For large signals, class-A amplifier is usually (c) 2 (d) 0.5
biased : 1175. In multistage amplifiers, direct coupling is
yeÌ[s efmeiveue nsleg Jeie&-A ØeJeOe&keâ meeceevÙele: yeeÙem[ especially suited for amplifying:
neslee nw– yeng ÛejCe ØeJeOe&keâeW ceW ............... kesâ ØeJeOe&ve kesâ efueS
(a) just at cut-off / keâš-Dee@Heâ hej ØelÙe#e Ùegiceve efJeMes<e Øekeâej mes GheÙegkeäle neslee nw–
(b) well into saturation / meble=hlelee ceW (a) high frequency a.c. signals
(c) so that VC can swing equal distances either GÛÛe DeeJe=efòe S.meer. efmeiveue
side of Q-point / Ssmes leeefkeâ VC , Q-efyevog kesâ efkeâmeer (b) changes in d.c. voltages
he#e ceW yejeyej otjer efmJebie keâj mekesâ [er.meer. Jeesušlee ceW heefjJele&ve
(c) high-level voltages
(d) at the point where VC = VE
efyevog peneB hej VC = VE nes GÛÛe-mlej Jeesušlee
(d) sinusoidal signals
1170. A class-B amplifier is biased:
Skeâ Jeie&-B ØeJeOe&keâ ........... yeeÙem[ neslee nw– pÙeeJe›eâerÙe efmeiveue
1176. When power output of an amplifier doubles,
(a) just at cut-off / keâš-Dee@Heâ hej the increase in its power level is ........ decibels:
(b) nearly twice cut-off / keâš-Dee@Heâ kesâ ueieYeie oesiegvee peye efkeâmeer ØeJeOe&keâ keâe Meefkeäle DeeGšhegš [yeue keâj
(c) at midpoint of load line efoÙee peelee nw lees Fmekesâ Meefkeäle mlej ceW Je=efæ ................
uees[ ueeFve kesâ ceOÙe efyevog hej [sefmeyeue neslee nw–
(d) so that IB just equals IC
(a) 2 (b) 20
Fme Øekeâej efkeâ IB, IC kesâ Skeâoce yejeyej nes (c) 3 (d) 10
1171. A class-B amplifier has high theoretical 1177. A minus 3 dB point on the gain versus
efficiency of 78.5 percent because: frequency curve of an amplifier is that point
Skeâ Jeie&-B ØeJeOe&keâ keâer mewæeefvlekeâ o#elee 78.5 ØeefleMele where :
nesleer nw keäÙeeWefkeâ– efkeâmeer ØeJeOe&keâ kesâ ueieYeie V/S DeeJe=efòe Je›eâ ceW 3 dB
(a) it is biased almost to saturation efyevog Jen efyevog nw, peneB–
Ùen ueieYeie meble=hlelee hej DeefYevele neslee nw~ (a) signal frequency drops to half the mid-band
(b) its quiescent current is low frequency / efmeiveue DeeJe=efòe, ceOÙe yewC[ DeeJe=efòe kesâ
Fmekeâer ØeÛeeueve Oeeje efvecve nesleer nw~ DeeOee lekeâ efiej peeleer nw~
(c) its output is an exact replica of its input (b) voltage amplification becomes half of its
Fmekeâer DeeGšhegš, Fmekesâ Fvehegš keâe ÙeLeeLe& ØeefleefveefOe nw~ maximum value / Jeesušlee ØeJeOe&ve Deheves DeefOekeâlece
(d) it is biased well below cut-off ceeve keâe DeeOee nes peelee nw~
Ùen keâš-Dee@Heâ kesâ veerÛes DeÛÚer lejn mes yeeÙem[ neslee nw~ (c) power falls to half its maximum value
1172. When output power level of a radio receiver Meefkeäle Deheves DeefOekeâlece ceeve keâe DeeOee nes peelee nw~
increases by 3 dB, its absolute power changes
by a factor of : (d) upper cut-off frequency becomes twice the
lower cut-off frequency
peye Skeâ jsef[Ùees efjmeerJej keâe Meefkeäle mlej 3 dB yeÌ{lee nw~ Dehej-keâš Dee@Heâ DeeJe=efòe, efvecve keâš-Dee@Heâ DeeJe=efòe keâer
Fmekeâe hetCe& Meefkeäle ............ kesâ keâejkeâ Éeje heefjJeefle&le ogiegvee nes peeleer nw~
neslee nw– 1178. The bandwidth of an amplifier may be
(a) 2 (b) 10 increased by :
(c) 1/2 (d) 3 efkeâmeer ØeJeOe&keâ keâer yewC[ ÛeewÌ[eF& ........ kesâ Éeje yeÌ{eF&
1173. The main reason for the variation of amplifier pee mekeâleer nw–
gain with frequency is: (a) decreasing the capacitance of its by pass
DeeJe=efòe kesâ meeLe Meefkeäle ueeYe kesâ heefjJele&ve keâe cegKÙe capacitors
keâejCe nw– Fmekesâ yeeFheeme kewâheefmešj kesâ Oeeefjlee keâes Iešekeâj~
(a) the presence of capacitances, both external (b) minimizing its stray capacitances
and internal Fmekesâ mš^s Oeeefjlee keâes keâce keâjkesâ~
Oeeefjlee keâer GheefmLeefle, yee¢e Deewj Deevleefjkeâ oesveeW (c) increasing input signal frequency
(b) due to interstage transformers Fvehegš efmeiveue DeeJe=efòe yeÌ{ekeâj~
FCšjmšspe š^ebmeHeâe@ce&j kesâ keâejCe (d) cascading it / Fmes keâemkesâ[ keâjkesâ~
Electrical 50000 (MCQ) Volume II 659 YCT
1179. The gain-bandwidth product of an amplifier is 1185. An OP-AMP with an open-loop gain of 10,000,
given by: Rin = 2 KΩ and R0 = 500 Ω is used in the non-
efkeâmeer ØeJeOe&keâ keâe ueeYe yewC[ ÛeewÌ[eF& keâe Øees[keäš inverting configuration shown in Fig. 4.5. The
................ kesâ Éeje efoÙee peelee nw– output resistance R0' is:
(a) f2 – f1 (b) fα – fβ 10,000 Kegues ueeYe Jeeues OP-AMP ceW Rin = 2 KΩ
(c) fT (d) βfα Deewj R0 = 500 Ω Ùen efÛe$e ceW ØeoefMe&le vee@ve FveJeefšËie
1180. A circuit which resonates at 1 MHz has a of efJevÙeeme ceW ØeÙegkeäle efkeâÙee peelee nw~ DeeGšhegš ØeeflejesOe
100. Bandwidth between half-power points is:
Skeâ heefjheLe pees 1 MHz hej Devegveeoer nw ceW 'a' 100 nw~ R0 nw–
Deæ& Meefkeäle efyevogDeeW kesâ ceOÙe yewC[ ÛeewÌ[eF& nw–
(a) 10 kHz (b) 100 kHz
(c) 10 Hz (d) 100 Hz
1181. The overall bandwidth of two identical voltage
amplifiers connected in cascade will:
keâemkesâ[ ceW mebÙeesefpele oes meceeve Jeesušlee ØeJeOe&keâeW keâer
mechetCe& yewC[ ÛeewÌ[eF&–
(a) remain the same as that of a single stage
Skeâue ÛejCe keâer lejn meceeve jnsieer~
(b) be worse than that of a single stage (a) 250.5 Ω (b) 21 Ω
Skeâue ÛejCe keâer Dehes#ee Kejeye nesieer~ (c) 2 Ω (d) 0.998 Ω
(c) be better than that of a single stage 1186. The feedback used in the circuit shown in Fig.
4.6 can be classified as:
Skeâue ÛejCe keâer Dehes#ee yesnlej nesieer~ efÛe$e ceW ØeoefMe&le heefjheLe ceW ØeÙegkeäle Heâer[yewkeâ ................
(d) be better if stage gain is low and worse if
stage gain is high / yesnlej nesiee Ùeefo ÛejCe ueeYe kesâ ¤he ceW Jeieeake=âle keâer pee mekeâleer nw–
efvecve nw Deewj Kejeye nesiee Ùeefo ÛejCe ueeYe DeefOekeâ nw~
1182. RC coupling is popular in low-level audio
amplifiers because it:
RC Ùegiceve efvecve mlej Dee@ef[Ùees ØeJeOe&keâeW ceW Øeefmeæ neslee
nw keäÙeeWefkeâ–
(a) has better low frequency response
FmeceW yesnlej efvecve DeeJe=efòe Devegef›eâÙee nesleer nw~
(b) is inexpensive and needs no adjustments
Ùen memleer nesleer nw Deewj efkeâmeer meceeÙeespeve keâer
DeeJeMÙekeâlee veneR nesleer nw~
(c) provides an output signal in phase with the
input signal / Fvehegš efmeiveue kesâ keâuee ceW DeeGšhegš
efmeiveue Øeoeve keâjlee nw~
(d) needs low voltage battery for collector supply
(a) shunt-series feedback / MeCš-ßesCeer Heâer[yewkeâ~
meb«eenkeâ mehueeF& nsleg efvecve Jeesušlee yewš^er keâer DeeJeMÙekeâlee
nesleer nw~ (b) shunt-shunt feedback / MeCš-MeCš Heâer[yewkeâ~
1183. The advantage of using negative feedback in an (c) series-shunt feedback / ßesCeer-MeCš Heâer[yewkeâ~
amplifier is that its gain can be made (d) series-series feedback / ßesCeer-ßesCeer Heâer[yewkeâ~
practically independent of :
Skeâ ØeJeOe&keâ ceW $e+Ceelcekeâ heâer[yewkeâ keâe GheÙeesie keâjves 1187. A single stage transistor amplifier contains
................ and associated circuitry:
keâe ueeYe Ùen nw efkeâ Fmekeâe ueefyOe JÙeJeneefjkeâ ™he mes Skeâue ÛejCe š^ebefpemšj ØeJeOe&keâ ceW ............... Deewj
mJeleb$e efkeâÙee pee mekeâlee nw~ mecyeefvOele heefjheLe neslee nw–
(a) temperature changes/leeheceeve ceW heefjJele&ve (a) two transistors / oes š^ebefpemšj
(b) age of components/IeškeâeW keâer DeeÙeg
(b) one transistor / Skeâ š^ebefpemšj
(c) frequency/ DeeJe=efòe
(c) three transistors / leerve š^ebefpemšj
(d) all of the above/Ghejesòeâ meYeer
1184. In a common emitter amplifier, the unbypassed (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR
emitter resistor provides: 1188. If the collector supply is 10V, then collector cut
keâe@ceve Glmepe&keâ ØeJeOe&keâ ceW, DeveyeeÙem[ Glmepe&keâ off voltage under d.c. conditions is ............
ØeeflejesOekeâ Øeoeve keâjlee nw– Ùeefo meb«eenkeâ Deehetefle& 10V nes lees d.c. efmLeefle kesâ
(a) voltage-shunt feedback / Jeesušlee MeCš Heâer[yewkeâ~
Devleie&le meb«eenkeâ keâš-Dee@Heâ Jeesušlee nw–
(a) 20 V (b) 5 V
(b) current-series feedback / Oeeje ßesCeer Heâer[yewkeâ~ (c) 2 V (d) 10 V
(c) negative-voltage feedback 1189. The point of intersection of d.c. and a.c. load
$e+Ceelcekeâ Jeesušlee Heâer[yewkeâ~ lines is called ................
(d) positive-current feedback d.c. Deewj a.c. uees[ ueeFve keâe ØeefleÛÚsve efyevog keânueelee
Oeveelcekeâ Oeeje Heâer[yewkeâ~ nw–
Electrical 50000 (MCQ) Volume II 660 YCT
(a) saturation point / meble=hle efyevog (a) RL + RC (b) RC RL
(b) cut off point / keâš-Dee@Heâ efyevog (c) RL – RC (d) RC
(c) operating point / ØeÛeeueve efyevog 1197. In the a.c. equivalent circuit of a transistor
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR amplifier, the capacitors are considered ...........
1190. The slope of a.c. load line is ..................... that of š^ebefpemšj ØeJeOe&keâ kesâ a.c. leguÙeebkeâ heefjheLe ceW mebOeeefj$e
d.c. load line: .................. kesâ ¤he ceW ceeves peeles nQ–
a.c. uees[ ueeFve keâe mueeshe d.c. uees[ ueeFve mes ........... (a) short / ueIeg
neslee nw– (b) open / Keguee
(a) the same as/ meceeve (c) partially open / DebMele: Keguee
(b) more than/DeefOekeâ (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR
(c) less than/keâce 1198. The purpose of d.c. conditions in a transistor is
(d) none of the above/Ghejesòeâ keâesF& veneR to ................
1191. If a transistor amplifier draws 2 mA when š^ebefpemšj ceW d.c. efmLeefle keâe GodoMs Ùe neslee nw–
input voltage is 10V, then its input impedance (a) reverse bias the emitter
is ................... Glmepe&keâ keâes Gl›eâce DeefYevele keâjvee~
peye Fvehegš Jeesušlee 10V nes, Ùeefo š^ebefpemšj ØeJeOe&keâ (b) forward bias the collector
2 mA ueslee nw leye Fmekeâer Fvehegš ØeefleyeeOee nw– meb«eenkeâ keâes De«e DeefYevele keâjvee~
(a) 20 kΩ (b) 0.2 kΩ (c) set up operating point
(c) 10 kΩ (d) 5 kΩ ØeÛeeueve efyevog keâes mesš-Dehe keâjvee~
1192. When a transistor amplifier is operating, the (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
current in any branch is ............... 1199. An amplifier has a power gain to 100. Its db
peye š^ebefpemšj ØeJeOe&keâ ØeÛeeefuele nes jne nes lees efkeâmeer gain is ...............
MeeKee ceW Oeeje nesleer nw– efkeâmeer ØeJeOe&keâ keâe Meefkeäle ueeYe 100 nw Fmekeâe db ueeYe
(a) sum of a.c. and d.c./a.c. Deewj d.c keâe Ùeesie nw–
(b) a.c. only / kesâJeue a.c. (a) 10 db
(c) d.c. only / kesâJeue d.c. (b) 20 db
(d) difference of a.c. and d.c./a.c. Deewj d.c. keâe Devlej (c) 40 db
1193. The purpose of capacitors in a transistor (d) none of the above
amplifier is to ................ Ghejeskeäle ceW mes keâesF& veneR~
š^ebefpemšj ØeJeOe&keâ ceW kewâhesefmešme& keâe GodosMÙe neslee nw– 1200. In order to get more voltage gain from a
transistor amplifier, the transistor used should
(a) protect the transistor / š^ebefpemšj keâer megj#ee keâjvee have ..................
(b) cool the transistor / š^ebefpemšj keâes "C[e keâjvee š^ebefpemšj mes DeefOekeâ Jeesušlee ueeYe Øeehle keâjves kesâ ›eâce
(c) couple or bypass a.c. component ceW, ØeÙegkeäle š^ebefpemšj ceW nesvee ÛeeefnS–
a.c. Ieškeâ keâes Ùegeficele Ùee yeeFheeme keâjvee
(a) thin base / heleuee DeeOeej
(d) provide biasing / JeeÙeefmebie Øeoeve keâjvee
(b) thin collector / heleuee meb«eenkeâ
1194. In the d.c. equivalent circuit of a transistor
amplifier, the capacitors are considered ......... (c) wide emitter / ÛeewÌ[e Glmepe&keâ
efkeâmeer š^ebefpemšj ØeJeOe&keâ kesâ d.c. leguÙeebkeâ heefjheLe ceW (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR
mebOeeefj$e .............. ceeves peeles nQ– 1201. The purpose of emitter capacitor (i.e. capacitor
across RE) is to ...............
(a) short / ueIeg
Glmepe&keâ mebOeeefj$e (DeLee&led RE kesâ S›eâe@me mebOeeefj$e) keâe
(b) open / Keguee
GodosMÙe neslee nw–
(c) partially short / DebMele: ueIeg
(a) avoid voltage gain drop
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR Jeesušlee ueeYe [^e@he otj keâjvee~
1195. In practice, the voltage gain of an amplifier is (b) forward bias the emitter
expressed ..................
JÙeJenej ceW, ØeJeOe&keâ keâe Jeesušlee ueeYe .............. JÙekeäle Glmepe&keâ keâes De«e DeefYeveefle keâjvee~
(c) reduce noise in the amplifier
efkeâÙee peelee nw– ØeJeOe&keâ ceW Meesj keâce keâjvee~
(a) as volts / Jeesušlee kesâ ¤he ceW (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
(b) as a number / mebKÙee kesâ ¤he ceW 1202. If a transistor amplifier feeds a load of low
(c) in db / db ceW resistance (e.g. speaker), then voltage gain will
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR be ................
1196. If RC and RL represent the collector resistance Ùeefo š^ebefpemšj ØeJeOe&keâ efvecve ØeeflejesOe kesâ Yeej keâes
and load resistance respectively in a single (mheerkeâj) Deehetefle& oslee nw lees Jeesušlee ueeYe nesiee–
stage transistor amplifier, then a.c. load is ...... (a) high / GÛÛe
Ùeefo RC Deewj RL efkeâmeer Skeâue ÛejCe š^ebefpemšj ØeJeOe&keâ (b) very high / yengle GÛÛe
ceW meb«eenkeâ ØeeflejesOe Deewj Yeej ØeeflejesOe keâes efve¤efhele (c) moderate / ceOÙece
keâjles neW lees a.c. uees[ nw– (d) low / efvecve
Electrical 50000 (MCQ) Volume II 661 YCT
1203. If the input capacitor of a transistor amplifier 1209. In an RC coupled amplifier, the voltage gain
is short-circuited, then ................ over mid-frequency range ..............
Ùeefo š^ebefpemšj ØeJeOe&keâ keâe Fvehegš mebOeeefj$e ueIegheefLele Skeâ RC Ùegeficele ØeJeOe&keâ ceW, ceOÙe DeeJe=efòe hejeme hej
nes peeS lees– Jeesušlee ueeYe ..........
(a) transistor will be destroyed (a) changes abruptly with frequency
š^ebefpemšj ve<š nes peeSiee DeeJe=efòe kesâ meeLe lespeer mes yeouelee nw~
(b) biasing conditions will change (b) is constant / efmLej neslee nw~
DeefYevele DeJemLee yeoue peeSieer (c) changes uniformly with frequency
(c) signal will not reach the base DeeJe=efòe kesâ meeLe Skeâmeceeve ¤he mes yeouelee nw~
efmeiveue DeeOeej hej veneR hengBÛesiee (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
(d) none of the above 1210. In obtaining the frequency response curve of
Ghejeskeäle ceW mes keâesF& veneR an amplifier, the ................
1204. The value of collector load RC in a transistor
efkeâmeer ØeJeOe&keâ keâe DeeJe=efòe Devege›f eâÙee Je›eâ Øeehle keâjves
amplifier is ............... the output impedance of ceW–
the transistor: (a) amplifier level output is kept constant
Skeâ š^ebefpemšj ØeJeOe&keâ ceW meb«eenkeâ Yeej RC keâe ceeve ØeJeOe&keâ mlej DeeGšhegš efmLej jKee peelee nw~
š^ebefpemšj kesâ DeeGšhegš ØeefleyeeOee ............ neslee nw– (b) amplifier frequency is held constant
ØeJeOe&keâ DeeJe=efòe efmLej jKeer peeleer nw~
(a) the same as / kesâ meceeve (c) generator frequency is held constant
(b) less than / mes keâce peefve$e DeeJe=efòe efmLej jKeer peeleer nw~
(c) more than / mes pÙeeoe (d) generator output level is held constant
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR peefve$e DeeGšhegš mlej efmLej jKeer peeleer nw~
1205. In transistor amplifiers, we generally use .......... 1211. An advantage of RC coupling scheme is the ......
capacitors: Skeâ RC Ùegiceve Ùeespevee keâe ueeYe nw–
š^ebefpemšj ØeJeOe&keâ ceW nce meeceevÙele: ............. mebOeeefj$e (a) good impedance matching
keâe GheÙeesie keâjles nQ– DeÛÚer ØeefleyeeOee cewefÛebie~
(a) electrolytic / Fueskeäš^esefueefškeâ (b) economy / efceleJÙeefÙelee~
(b) mica / DeYeükeâ (c) high efficiency GÛÛe o#elee~
(c) paper / keâeiepe (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
1212. In an RC coupling scheme, the coupling
(d) air / JeeÙeg capacitor CC must be large enough ..............
1206. The output power of a transistor amplifier is RC-Ùegiceve Ùeespevee ceW Ùegiceve mebOeeefj$e CC yeÌ[e nesvee
more than the input power because the ÛeeefnS–
additional power is supplied by ...............
(a) to pass d.c. between the stages
Skeâ š^ebefpemšj ØeJeOe&keâ keâer DeeGšhegš Meefkeäle Fvehegš ÛejCeeW kesâ ceOÙe d.c. keâes iegpeejves nsleg~
Meefkeäle mes DeefOekeâ nesleer nw keäÙeeWefkeâ Deefleefjkeäle Meefkeäle (b) not to attenuate the low frequencies
.................... kesâ Éeje Deehetefle& keâer peeleer nw– efvecve DeeJe=efòe keâes keâce veneR keâjves nsleg~
(a) transistor / š^ebefpemšj (c) to dissipate high power
(b) biasing circuit / yeeÙeefmebie heefjheLe GÛÛe Meefkeäle Üeme keâjves nsleg~
(c) collector supply VCC / meb«eenkeâ mehueeF& VCC (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR 1213. When a multistage amplifier is to amplify d.c.
1207. CC configuration is used for impedance signal, then one must use ............ coupling.
matching because its ...............
peye yeng ÛejCe ØeJeOe&keâ d.c. efmeiveue keâes ØeJeefOe&le keâjves
ØeefleyeeOee cewefÛebie kesâ efueS CC efJevÙeeme ØeÙegkeäle efkeâÙee ns leg nes lee nw, lees nceW ............ Ùegiceve ØeÙegkeäle keâjvee
peelee nw, keäÙeeWefkeâ Fmekeâe– ÛeeefnS–
(a) input impedance is very high (a) RC
(b) transformer / š^ebmeHeâe@ce&j
Fvehegš ØeefleyeeOee GÛÛe nesleer nw~ (c) direct / ØelÙe#e
(b) input impedance is low (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR
Fvehegš ØeefleyeeOee efvecve nesleer nw~ 1214. Transformer coupling provides high efficiency
(c) output impedance is very low because ..............
DeeGšhegš ØeefleyeeOee yengle efvecve nesleer nw~ š^ebmeHeâe@ce&j Ùegiceve GÛÛe o#elee Øeoeve keâjleer nw,
(d) one of the above / Ghejeskeäle ceW mes Skeâ~ keäÙeeWefkeâ–
(a) collector voltage is stepped up
1208. A radio receiver has .............. of amplification:
meb«eenkeâ Jeesušlee GÛÛeeÙeer neslee nw~
jsef[Ùees efjmeerJej ceW ØeJeOe&ve keâe ............. neslee nw– (b) d.c. resistance is low
(a) one stage / Skeâ ÛejCe d.c. ØeeflejesOe efvecve neslee nw~
(b) two stages / oes ÛejCe (c) collector voltage is stepped down
(c) three stages / leerve ÛejCe meb«eenkeâ Jeesušlee DeheÛeeÙeer nesleer nw~
(d) more than three stages / leerve ÛejCeeW mes pÙeeoe (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
Electrical 50000 (MCQ) Volume II 662 YCT
1215. Transformer coupling is generally employed 1222. The gain of an amplifier is expressed in db
when load resistance is ................. because ............
š^ebmeHeâe@ce&j Ùegiceve meeceevÙele: ØeÙegkeäle efkeâÙee peelee nw peye ØeJeOe&keâ ueeYe db ceW JÙekeäle efkeâÙee peelee nw keäÙeeWefkeâ–
Yeej ØeeflejesOe ................ neslee nw– (a) it is a simple unit / Ùen meeOeejCe FkeâeF& nw~
(a) large / yeÌ[e (b) calculations become easy
(b) very large / yengle yeÌ[e ieCevee Deemeeve nes peeleer nw~
(c) small / Úesše (c) human ear response is logarithmic
ceeveJe keâeve keâer Devegef›eâÙee ueIegieCekeâerÙe nesleer nw~
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
1216. If a three-stage amplifier has individual stage
gains of 10 db, 5 db and 12 db, then total gain 1223. A current amplification of 2000 is a gain of .......
in db is .............. 2000 keâe Oeeje ØeJeOe&ve ............... keâe ueeYe nw–
Ùeefo efkeâmeer leerve ÛejCe ØeJeOe&keâ keâe JÙeefkeäleiele ueeYe (a) 3 db (b) 66 db
(c) 20 db (d) 200 db
10 db, 5 db Deewj 12 db nes leye dB ceW mechetCe& ueeYe 1224. An amplifier receives 0.1 W of input signal and
nw– delivers 15 W of signal power. What is the
(a) 600 db (b) 24 db power gain in db?
(c) 14 db (d) 27 db Skeâ ØeJeOe&keâ Fvehegš efmeiveue keâe 0.1 W Øeehle keâjlee nw
1217. The final stage of a multistage amplifier uses Deewj efmeiveue Meefkeäle keâe 15 W Øeoeve keâjlee nw db ceW
.............. Meefkeäle ueeYe keäÙee nw?
yengÛejCe ØeJeOe&keâ keâe Deefvlece ÛejCe .......... keâe GheÙeesie (a) 21.8 db (b) 14.6 db
keâjlee nw– (c) 9.5 db (d) 17.4 db
(a) RC coupling /RC Ùegiceve 1225. RC coupling is generally confined to low power
(b) transformer coupling / š^ebmeHeâe@ce&j Ùegiceve applications because of ...........
(c) direct coupling / ØelÙe#e Ùegiceve RC Ùegiceve Deeceleewj hej ........... kesâ keâejCe efvecve Meefkeäle
(d) impedance coupling / ØeefleyeeOee Ùegiceve DevegØeÙeesieeW lekeâ meerefcele nw–
1218. The ear is not sensitive to ................ (a) large value of coupling capacitor
keâeve ............. kesâ efueS mebJesoveMeerue veneR neslee nw– Ùegiceve mebOeeefj$e kesâ yeÌ[s ceeve
(a) frequency distortion / DeeJe=efòe efJe¤heCe (b) low efficiency / efvecve o#elee
(c) large number of components
(b) amplitude distortion / DeeÙeece efJe¤heCe
IeškeâeW keâer DeefOekeâ mebKÙee
(c) frequency as well as amplitude distortion
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR
DeeJe=efòe kesâ meeLe-meeLe DeeÙeece efJe¤heCe 1226. The number of stages that can be directly
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR coupled is limited because .............
1219. A gain of 1000 times in voltage is expressed by ÛejCeeW keâer mebKÙee pees ØelÙe#e¤he mes Ùegeficele efkeâÙee pee
............. mekeâlee nw, meerefcele nw keäÙeeWefkeâ ...............
Jeesušlee ceW 1000 iegvee ueeYe ............. kesâ Éeje JÙekeäle (a) changes in temperature cause thermal
efkeâÙee peelee nw– instability/ leehe ceW heefjJele&ve, G<ceerÙe DeefmLejlee keâe
(a) 60 db (b) 30 db keâejCe yevelee nw~
(c) 120 db (d) 600 db (b) circuit becomes heavy and costly
1220. The frequency response of transformer
coupling is ............
heefjheLe Yeejer Deewj cenbiee nes peelee nw~
š^ebmeHeâe@ce&j Ùegiceve keâer DeeJe=efòe Devegef›eâÙee nesleer nw– (c) it becomes difficult to bias the circuit
heefjheLe keâes DeefYevele keâjvee keâef"ve nes peelee nw~
(a) good / DeÛÚer
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
(b) very good / yengle DeÛÚer 1227. The purpose of RC or transformer coupling is
(c) excellent / Deefle Glke=â<š to ................
(d) poor / Kejeye RC Ùee š^ebmeHeâe@ce&j Ùegiceve keâe GodosMÙe neslee nw–
1221. The total gain of a multistage amplifier is less (a) block a.c. / a.c. keâes DeJe®æ keâjvee~
than the product of the gains of individual (b) separate bias of one stage from another
stages due to .............. Skeâ ÛejCe mes otmejs keâe Deueie DeefYeveefle~
yengÛejCe ØeJeOe&keâ keâe mechetCe& ueeYe, JÙeefkeäleiele ÛejCeeW (c) increase thermal stability
kesâ ueeYeeW kesâ iegCeveHeâue mes keâce neslee nw, efkeâme keâejCe G<ceerÙe mLeeefÙelJe yeÌ{eves~
mes? (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
(a) power loss in the coupling device 1228. The upper or lower cut off frequency is also
Ùegiceve Ùegefkeäle ceW Meefkeäle neefve called ........... frequency.
(b) loading effect of next stage GÛÛe Deewj efvecve keâš-Dee@Heâ DeeJe=efòe .............. Yeer
Deieues ÛejCe kesâ ueesef[bie ØeYeeJe keânueeleer nw–
(c) the use of many transistors (a) resonant / Devegveeo
keâF& š^ebefpemšjeW kesâ GheÙeesie (b) sideband / meeF[ yewC[
(d) the use of many capacitors (c) 3 db
keâF& mebOeeefj$eeW kesâ GheÙeesie (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR
Electrical 50000 (MCQ) Volume II 663 YCT
1229. The bandwidth of a single stage amplifier is 1235. Negative feedback in an amplifier results in:
........... that of a multistage amplifier: efkeâmeer ØeJeOe&keâ ceW $e+Ceelcekeâ Heâer[yewkeâ keâe heefjCeece nw–
Skeâue ÛejCe ØeJeOe&keâ keâer yewC[ ÛeewÌ[eF&, yengÛejCe (a) reduced gain and bandwidth
ØeJeOe&keâ .................. nesleer nw– keâce ueeYe Deewj yewC[ ÛeewÌ[eF&~
(a) more than/mes pÙeeoe (b) reduced gain but increased bandwidth
(b) the same as/kesâ yejeyej keâce ueeYe uesefkeâve DeefOekeâ yewC[ ÛeewÌ[eF&~
(c) less than/mes keâce (c) increased gain and bandwidth
(d) data insufficient/DeeBkeâÌ[e DeheÙee&hle yeÌ{e ngDee ueeYe Deewj yewC[ ÛeewÌ[eF&~
1230. The output impedance of an emitter follower is (d) increased gain but reduced bandwidth
............... yeÌ{e ngDee ueeYe uesefkeâve keâce ÛeewÌ[eF&~
Sceeršj HeâeueesDej keâer DeeGšhegš ØeefleyeeOee.........nesleer 1236. How many cascaded stages of CE amplifiers
nw– will result in polarity inversion of the input
signal?
(a) high / GÛÛe CE ØeJeOe&keâeW kesâ efkeâleves keâemkesâ[ ÛejCe Fvehegš efmeiveue
(b) very high / yengle GÛÛe kesâ OeÇgJeerÙelee JÙegl›eâce ceW heefjCeece keâjles nQ?
(c) almost zero / ueieYeie MetvÙe (a) Two / oes~
(d) low / efvecve (b) Three / leerve~
1231. It is most necessary to control signal-to-noise (c) Polarity inversion is not possible in CE
ratio at .............. amplifiers / CE ØeJeOe&keâ ceW OeÇgJeerÙelee Gušvee mecYeJe
efmeiveue Deewj Meesj Devegheele keâes ............. hej jeskeâvee
veneR nw~
DeeJeMÙekeâ neslee nw–
(d) Any of the above / Ghejeskeäle ceW mes keâesF&~
(a) initial stage / ØeejefcYekeâ ÛejCe~ 1237. In class-AB amplifiers, the current flows
(b) driver stage / [^eFJej ÛejCe~ through the active device for:
(c) output stage / DeeGšhegš ÛejCe~ Jeie&-AB ØeJeOe&keâ ceW meef›eâÙe Ùegefkeäle mes Oeeje .......... kesâ
(d) detector stage / mebmetÛekeâ ÛejCe~ efueS ØeJeeefnle nesleer nw–
1232. In order to obtain good gain stability in a (a) less than half of the duration of input cycle
negative voltage feedback amplifier (Av = Fvehegš Ûe›eâ kesâ DeJeefOe kesâ DeeOee mes keâce~
voltage gain without feedback; mv = feedback (b) half duration of input cycle
fraction), ................. Fvehegš Ûe›eâ keâer DeeOeer DeJeefOe~
efkeâmeer $e+Ceelcekeâ Jeesušlee Heâer[yewkeâ ØeJeOe&keâ ceW DeÛÚer (c) more than half but less than full cycle
ueeYe efmLejlee Øeehle keâjves kesâ efueS .................. duration
(Av = efyevee Heâer[yewkeâ kesâ Jeesušlee ueeYe, mv = Heâer[yewkeâ DeeOee mes DeefOekeâ uesefkeâve hetCe& Ûe›eâ DeJeefOe mes keâce~
DebMe)– (d) full duration of input cycle
(a) Av mv = 1 Fvehegš Ûe›eâ kesâ hetCe& DeJeefOe~
(b) Av mv >> 1 *1238.If three cascaded stages of amplifier have gains
(c) Av mv < 1 10, 20 and 30, the overall gain will be:
(d) none of the above/Ghejesòeâ keâesF& veneR Ùeefo efkeâmeer ØeJeOe&keâ kesâ leerve keâemkesâ[ ÛejCeeW keâe ueeYe
1233. The output of a class-B amplifier: 10, 20 Deewj 30 nes leye mechetCe& ueeYe nesiee–
Jeie&-B ØeJeOe&keâ keâe DeeGšhegš– (a) 200 (b) 400
(a) comprises short-duration current pulses (c) 1200 (d) 6000
Úesšer DeJeefOe keâer Oeeje heume Meeefceue nesleer nw~ 1239. Which of the following will be preferred for
(b) is distortion-free high gain?
efJe¤heCe cegkeäle neslee nw~ GÛÛe ueeYe kesâ efueS efvecve ceW mes keâewve hemebo efkeâÙee
(c) consists of positive half-cycles only
peeSiee?
kesâJeue Oeveelcekeâ Deæ&Ûe›eâ neslee nw~
(d) is like the output of a full-wave rectifier (a) Cascade amplifier / keâemkesâ[ ØeJeOe&keâ
hetCe& lejbie efo<škeâejer keâer lejn neslee nw~ (b) Push-pull amplifier / hegMe-hegue ØeJeOe&keâ
1234. A Class-B push-pull amplifier has the main (c) Darlington amplifier / [eefueËiešve ØeJeOe&keâ
advantage of being free from: (d) Any of the above / Ghejeskeäle ceW mes keâesF&
Jeie&-B hegMe-hegue ØeJeOe&keâ keâe ............. cegkeäle nesvee
1240. In a RC coupled amplifier the component
ØecegKe ueeYe neslee nw– producing distortion is:
(a) D.C. magnetic saturation effects
RC Ùegeficele ØeJeOe&keâ ceW efJe¤heCe Glhevve keâjves Jeeuee
D.C. ÛegcyekeâerÙe meble=hle ØeYeeJe~
(b) even-order harmonic distortion DeJeÙeJe nw–
mece-keâesefš neceexefvekeâ efJe¤heCe~ (a) resistor / ØeeflejesOekeâ
(c) unwanted noise (b) capacitor / mebOeeefj$e
DeJeebefÚle Meesj~ (c) power supply / hee@Jej mehueeF&
(d) any circuit unbalances
efkeâmeer heefjheLe keâe Demeblegueve~ (d) transistor itself / š^ebefpemšj mJeÙeb
................. efvecvelece Meesj mlej neslee nw– 1412. In class-A operation, the input circuit of a
JFET is ……… biased.
(a) triode/š^^eÙees[ Jeie&-A ØeÛeeueve ceW JFET keâe Fvehegš heefjheLe .............
(b) ordinary transistor/meeOeejCe š^eBefpemšj DeefYevele neslee nw~
(c) tetrode/šsš^es[ (a) forward/De«e
(d) JFET (b) reverse /efjJeme&
1407. A MOSFET is sometimes called…..FET:
(c) not /veneR
MOSFET keâYeer-keâYeer .............. FET keânueelee nw~
(d) none of the above/Ghejeskeäle ceW mes keâesF& veneR
(a) many gate/keâF& iesš
1413. If the gate of a JFET is made less negative, the
(b) open gate/Keguee iesš
width of the conducting channel….
(c) insulated gate/efJeÅeglejesOeer iesš Ùeefo JFET keâe iesš keâce $e+Ceelcekeâ yevee efoÙee peelee nw
(d) shorted gate/Meešx[ iesš lees Ûeeueve Ûewveue keâer ÛeewÌ[eF&–
Electrical 50000 (MCQ) Volume II 680 YCT
(a) remains the same /meceeve jnleer nw 1420. In a JFET beyond the pinch off voltage, as the
(b) is decreased/Ieš peeleer nw drain voltage increases; the drain current :
(c) is increased/yeÌ{ peeleer nw ef keâmeer FET ceW efhebÛe Dee@heâ Jeesušlee mes Thej pewmes-pewme
(d) none of the above/Ghejeskeäle ceW mes keâesF& veneR [^ sve Jeesušlee yeÌ{leer nw, [^sve Oeeje–
1414. The pinch-off voltage of a JFET is about…….. (a) remains almost constant /ueieYeie efmLej jnleer nw
JFET keâer efhebÛe Jeesušlee ueieYeie ............. nesleer nw~ (b) decreases/Iešleer nw
(a) 5 V (b) 0.6 V (c) increases /yeÌ{leer nw
(c) 15 V (d) 25 V (d) may increases or decreases/yeÌ{ Ùee Ieš mekeâleer nw
1415. The input impedance of a MOSFET is of the 1421. n-channel FETs are superior to p-channel
order of ……. FETs because :
MOSFET keâer Fvehegš ØeefleyeeOee ............... kesâ ›eâce keâe N-Ûewveue FET, P- Ûewveue FET mes DeÛÚe neslee nw
nesleer nw~ keäÙeeWefkeâ-
(a) Ω (a) they have lower switching time
(b) a few hundred Ω/ kegâÚ meew Ω GmeceW efvecve efmJeefÛebie meceÙe neslee nw
(c) kΩ (b) they have lower pinch off voltage
(d) several MΩ/keâF& MΩ GmeceW efvecve efhebÛe Dee@heâ Jeesušlee nesleer nw
1416. The gate voltage in a JFET at which drain
(c) they have higher input impedance
current becomes zero is called ………. voltage.
JFET ceW iesš Jeesušlee efpeme hej [^sve Oeeje MetvÙe nes Gmece GÛÛe Fvehegš ØeefleyeeOee nesleer nw
peeleer nw ............... Jeesušlee keânueelee nw~ (d) mobility of charge carrier electron in n-
channel FET is greater than the mobility of
(a) saturation/meble=hle
change carrier hole in p-channel FET
(b) pinch-off/efhebÛe Dee@heâ
P-Ûewveue FET ceW DeeJesMe Jeenkeâ nesue keâer ieefleMeeruelee
(c) active/meef›eâÙe
mes DeefOekeâ nesleer nw~
(d) cut-off/keâš Dee@heâ
1417. In a FET, there are …… pn junctions at the 1422. The charge carriers in a p-channel FET are :
sides. P-Ûewveue FET ceW DeeJesMe Jeenkeâ neslee nw–
efkeâmeer JFET ceW, meeF[ hej ............ PN meefvOeÙeeB nesleer (a) electrons alone /Dekesâues Fueskeäš^e@ve
nw~ (b) holes alone /Dekesâues nesume
(a) three (b) four (c) both electorns and holes
(c) five (d) two
Fueskeäš^e@ve Deewj nesume oesveeW
1418. The transconductance of a JFET ranges
from…… (d) may be either electorns or holes
JFET kesâ š^ebmekeâC[keäšWme keâer hejeme nesleer– Ùee lees Fueskeäš^e@ve Ùee lees nesume nes mekeâlee nw
(a) 100 to 500 mA/V/100 mes 500mA/V 1423. The charge carriers in an n-channel FET are :
(b) 500 to 1000mA/V N-Ûewveue FET ceW DeeJesMe Jeenkeâ neslee nw–
(c) 0.5 to 30 mA/V (a) electrons alone /Dekesâues Fueskeäš^e@ve
(d) above 1000 mA/V/100mA/V mes DeefOekeâ
(b) holes alone /Dekesâues nesume
1419. The transconductance gm of on FET in the
saturation region equals : (c) both electorns /Fueskeäš^e@ve Deewj nesume oesveeW
meble=hle #es$e ceW FET keâer š^eBmekeâC[keäšWme gm............. kesâ (d) may be either electrons or holes
yejeyej nesleer nw– Ùee lees Fueskeäš^e@ve Ùee lees nesume nes mekeâlee nw
2 I DSS 1424. When the gate-to-source voltage VGS of an n-
(a) − channel JFET is made more and more
VP
2
negative, the drain current :
2I V peye N-Ûewveue JFET keâer meesme& iesš Jeesušlee VGS
(b) − DSS 1 − GS
VP VP DelÙeefOekeâ $e+Ceelcekeâ yevee oer peeleer nw, leye [^sve Oeeje–
2 I DSS VGS
1/ 2
(a) increase/yeÌ{leer nw
(c) − 1 − (b) decreases/Iešleer nw
VP VP
1 (c) remains unchanged/DeheefjJeefle&le jnleer nw
(d) ( I DSS .I DS )1/ 2 (d) may increases or decrease/yeÌ{ Ùee Ieš mekeâleer nw
VP
Electrical 50000 (MCQ) Volume II 681 YCT
1425. When the gate to source voltage VGS of a p- 1432. The dynamic drain resistance of MOSFET is of
channel JFET is made more positive, the drain the order of :
current : MOSFET keâe ieeflekeâ [^sve ØeeflejesOe ................ kesâ ›eâce
peye P-Ûewveue FET keâe iesš m$eesle Jeesušlee VGS neslee nw–
DelÙeefOekeâ Oeveelcekeâ yevee efoÙee peelee nw leye [^sve Oeeje- (a) 10 KΩ (b) 500 KΩ
(a) increases /yeÌ{leer nw (c) 5 MΩ (d) 100 MΩ
(b) decreases /Iešleer nw 1433. The magnitude of the threshold voltage VT for
(c) remains constant /efmLej jnleer nw enhancement MOSFET is of the order of :
(d) may increase or decrease/yeÌ{ Ùee Ieš mekeâleer nw FvnsvmecesCš MOSFET kesâ efueS LeÇes-meesu[ Jeesušlee VT
1426. The input resistance of a JFET is of the order keâe heefjceeCe............... keâerr keâesefš keâe neslee nw–
of : (a) 4 volts (b) 10 volts
FET keâer Fvehegš ØeefleyeeOe .................... kesâ ›eâce keâer (c) 40 volts (d) 100 volts
nesleer nw~ 1434. Out of the four devices mentioned below, the
(a) 1kΩ (b) 10kΩ fastes switching device is :
(c) 1MΩ (d) 100 Ω veerÛes GuuesefKele Ûeej ÙegefòeâÙeeW ceW mes meyemes leer›e mJeerefÛebie
1427. The main drawback of a JFET is its : Ùegefkeäle nw–
FET keâe cegKÙe neefve nw Fmekeâer–
(a) JFET (b) BJT
(a) high input impedance /GÛÛe Fvehegš ØeefleyeeOee (c) MOSFET (d) Triode
(b) low input impedance /efvecve Fvehegš ØeefleyeeOee 1435. What is an advantage of MOS transistors
(c) higher noise /GÛÛe Meesj ØeefleyeeOee structure in integrated circuits?
(d) lower gain /efvecve ueeYe Fbšer«esšs[ heefjheLeeW ceW MOS š^ebefpemšj mebjÛevee keâe keäÙee
1428. In a JFET, the amplification factor µ, ueeYe nw?
transconductance gm, and the dynamic drain
(a) Faster switching / lespeer mes efmJeefÛebie
resistance are related is :
(b) Less capacitance / keâce Oeeefjlee
Skeâ FET ceW ØeJeOe&ve iegCekeâ µ š^ebmekeâC[keäšWme gm Deewj
(c) Higher component density and lower cost /
ieeflekeâ [^sve ØeeflejesOe mecyeefvOele nesles nQ–
GÛÛe Ieškeâ IevelJe Deewj keâce ueeiele
g
(a) µ = m (d) Lower resistance / keâce ØeeflejesOe
rm
1436. A properly biased JFET will act as a :
r GefÛele {bie mes DeefYevele JFET.............. keâer lejn keâeÙe&
(b) µ = m
gm keâjlee nw–
(c) µ = g m .rd (a) current controlled current source
(d) m = g m .rd2 Oeeje efveÙebef$ele Oeeje m$eesle
1429. The transconductance g m of JFET is of the (b) voltage controlled voltage source
order of :
Jeesušlee efveÙebef$ele Jeesušlee m$eesle
FET keâer š^eBmekeâC[keäšWme .............. kesâ ›eâce keâe neslee nw~
(c) voltage controlled current source
(a) 1 mS (b) 1 S
(c) 100 S (d) 1000 S Jeesušlee efveÙebef$ele Oeeje m$eesle
1430. Inter electrode capacitances in an JFET are of (d) current controlled voltage source of α of the
the order of : transistor/š^eBefpemšj kesâ α keâe Jeesušlee efveÙebe$f ele
efkeâmeer JFET ceW FCšj Fuesefkeäš^es[ Oeeefjlee ............... keâer
Jeesušlee m$eesle
›eâce keâer nesleer nw–
(a) 1 pF (b) 100 pF 1437. If α = 0.98, ICO = 6µA and IB = 100µA for a
(c) 0.1 µF (d) 1 µF transistor, then the value of IC will be :
1431. The dynamic drain resistance of a JFET is of Ùeefo efkeâmeer š^eBefpemšj kesâ efueS α = 0.98, ICO = 6 µA
the order of : Deewj IB = 100 µA nes lees IC keâe ceeve nesiee–
FET keâe ieeflekeâ [^sve ØeeflejesOe ............. kesâ ›eâce keâe
(a) 2.3 mA
neslee nw~ (b) 3.1 mA
(a) 1 KΩ (b) 10 KΩ (c) 4.6 mA
(c) 500 MΩ (d) 100 MΩ (d) 5.2 mA
Electrical 50000 (MCQ) Volume II 682 YCT
1438. The mobility of an electron in a conductor is V
expressed in terms of : (a) I DSS 1 − GS
VP
efkeâmeer Ûeeuekeâ ceW efkeâmeer Fueskeäš^e@ve keâer ieefleMeeruelee kesâ
2
heo ceW JÙekeäle keâer peeleer nw– V
(b) I DSS 1 − GS
(a) cm2/V-s VP
(b) cm/V-s
(c) I DSS 1 − (VGS / VD )
(c) cm2/V
(d) cm2/s V
(d) I 2 DSS 1 − GS
1439. As the temperature is increased, the voltage VP
across a diode carrying a diode carrying a
1444. Consider the following statements:
constant current:
FETs when compared to BJTs have-
pewmes-pewmes leehe yeÌ{eÙee peelee nw, efmLej Oeeje Jenve keâjles
efvecveefueefKele keâLeveeW hej efJeÛeej keâjW–
ngS efkeâmeer [eÙees[ kesâ S›eâe@me Jeesušlee–
BJT keâer leguevee ceW FET keâe–
(a) increases/yeÌ{leer nw
1. high input impedance/ GÛÛe Fvehegš ØeefleyeeOee~
(b) decreases/Iešleer nw
2. current flow due to majority carries
(c) remains constant /efmLej jnleer nw
yengmebKÙekeâ Jeenkeâ kesâ keâejCe Oeeje ØeJeen nesleer nw~
(d) may increase or decrease depending upon the
3. low input impedance / efvecve Fvehegš ØeefleyeeOee~
doping levels in the junction/meefvOe ceW [esefhebie mlej
4. current flow due to minority carriers.
hej efveYe&j keâjles ngS yeÌ{ Ùee Ieš mekeâlee nw~
DeuhemebKÙekeâ Jeenkeâ kesâ keâejCe Oeeje ØeJeen nesleer nw~
1440. Pinch-off voltage (VP) for an FET is the drain
voltage at which : Which of the given statements above are
correct?
efkeâmeer FET kesâ efueS efhebÛe-Dee@heâ Jeesušlee VP, [^sve
Thej efoÙes ieÙes keâLeveeW ceW mes keâewve-mee mener nw?
Jeesušlee nesleer nw efpeme hej–
(a) 1 and 4/1 Deewj 4 (b) 2 and 3/2 Deewj 3
(a) significant drain current starts flowing
cenlJehetCe& [^sve Oeeje ØeJeeefnle nesvee Meg™ keâjleer nw (c) 3 and 4/3 Deewj 4 (d) 1 and 2/1 Deewj 2
(b) drain current becomes zero 1445. Compared to the bipolar junction transistor, a
JFET:
[^sve Oeeje MetvÙe nesleer nw
efÉOeÇgJeerÙe pebkeäMeve š^ebefpemšj keâer leguevee ceW Skeâ
(c) all free charges get removed from the channel
JFET........
meYeer cegkeäle DeeJesMe, Ûewveue mes nše efoS peeles nQ
1. has a larger gain bandwidth production
(d) avalanche break down takes place
SJeueeBÛes Yebpeve mLeeve ueslee nw Skeâ DeefOekeâ ueeYe yewC[defJe[dLe GlheVe keâjlee nw~
2. is less noisy / Meesj keâce neslee nw~
1441. The ON-resistance rdON of an FET is the ratio:
3. has less input resistance/Fvehegš ØeeflejesOe keâce neslee nw~
FET keâe ON-ØeeflejesOe rd ................. keâe Devegheele
ON 4. has current flow due to only majority carriers
neslee nw~ kesâJeue yengmebKÙekeâ Jeenkeâ kesâ keâejCe Oeeje ØeJeeefnle nesleer nw~
(a) VDS/ID at the origin/cetue efyevog hej VDS/ID (a) 1, 2,3 and 4 are correct./ 1,2,3,Deewj 4 mener nw~
(b) VDS/ID in the saturation region (b) 1 and 2 are correct/ 1 Deewj 2 mener nw~
VDS/ID, meble=hle #es$e ceW (c) 2 and 4 are correct/ 2 Deewj 4 mener nQ~
(c) ∆VDS/∆ID in the saturation region/∆VDS/∆ID, (d) 3 and 4 are correct/ 3 Deewj 4 mener nQ~
meble=hle #es$e ceW 1446. Which of the following are the characteristics
(d) VGS/ID at the origin/VGS/ID, cetue yevog hej of a junction field effect transistor?
1442. FET has offset voltage of about : efvecveefueefKele ceW mes keâewve meer Skeâ pebkeäMeve heâeru[ Fhesâkeäš
FET ceW Dee@heâ mesš Jeesušlee ueieYeie..............kesâ nesleer nw~ š^ebefpemšj keâer efJeMes<elee nw?
(a) 0.2 volt (b) 0.6 volt 1. High input resistance/ GÛÛe Fvehegš ØeeflejesOe
(c) 1.1 volt (d) zero /MetvÙe 2. Good thermal stability/ DeÛÚer Lece&ue mšseyf eefuešer
3. High current gain/ GÛÛe Oeeje ueeYe
1443. The saturation drain current IDS in an FET
equals : 4. More noisy than bipolar junction transistor
FET ceW meble=hle [^sve Oeeje IDS.............. kesâ yejeyej nesleer efÉOegÇJe pebkeäMeve š^ebefpemšj keâer leguevee ceW DeefOekeâ Meesj
(a) 1 and 3/1 Deewj 3 (b) 1 and 2/1 Deewj 2
nw–
(c) 2 and 3/2 Deewj 3 (d) 3 and 4/3 Deewj 4
Electrical 50000 (MCQ) Volume II 683 YCT
1447. When the positive voltage on the gate of a p- (a) having low input impedance
channel JFET is increased, its drain current: Fvehegš ØeefleyeeOee efvecve nesvee~
peye Skeâ p-Ûewveue JFET kesâ iesš hej hee@efpeefšJe (b) having high output impedance.
Jeesušspe, yeÌ{lee nw~ Fmekeâer [^sve Oeeje– efveie&le ØeefleyeeOee GÛÛe nesvee~
(a) increases/ yeÌ{lee nw~ (c) being noisy/ Meesj GlheVe keâjves Jeeuee~
(b) decreases / Iešlee nw~ (d) having small gain-bandwidth product
(c) remains the same / meceeve yevee jnlee nw~ iesve yewC[efJe[dLe Øees[keäš keâce nesvee~
(d) none of the above / Ghejesòeâ ceW mes keâesF& veneR~ 1453. Thermal runaway is not encountered in FETs,
[U.P.T.U. Elec. Engg. EVen Semester, 2009-10] because:
1448. The small value of drain-to source voltage, FETs ceW Lece&ue jveJes keâe meecevee veneR keâjvee heÌ[lee nw,
JFET behaves like a: keäÙeeWefkeâ–
[^sve mes œeesle Jeesušspe keâs efvecve ceeve hej, JFET Skeâ (a) IDS has a zero temperature coefficient
.....kesâ YeeBefle JÙeJenej keâjlee nw– IDS keâe leehe iegCeebkeâ MetvÙe neslee nw~
(a) resistor/ ØeeflejesOe (b) IDS has a negative temperature coefficient
(b) constant current source /efmLej Oeeje œeesle IDS keâe leehe iegCeebkeâ $e+Ceelcekeâ neslee nw~
(c) constant voltage source/ efmLej Jeesušspe œeesle (c) IDS has a positive temperature coefficient
(d) negative resistance/ $e+Ceelcekeâ ØeeflejesOe IDS keâe leehe iegCeebkeâ Oeveelcekeâ neslee nw~
1449. The drain-source voltage at which drain (d) the mobility of the carriers increases with
current becomes nearly constant, is called : increase in temperature/kewâefjÙej keâer ceesefyeefuešer
[^sve-meesme& Jeesušspe efpeme hej [^sve Oeeje ueieYeie efmLej nes leeheceeve ceW Je=efæ kesâ meeLe yeÌ{leer nw~
peeleer nw, keânueelee nw...... 1454. Thermal runaway is not possible in FET
because, as the temperature of FET increases:
(a) barrier voltage/ yewefjÙej Jeesušspe~
FET ceW Lece&ue jveJes mecYeJe veneR neslee nw keäÙeeWefkeâ, pewmes
(b) breakdown voltage/yeÇskeâ [eGve Jeesušspe~
FET keâe leeheceeve yeÌ{lee nw–
(c) pick-off voltage/ efhekeâ-Dee@heâ Jeesušspe~
(a) the drain current increases
(d) pinch-off voltage/ efhebÛe-Dee@heâ Jeesušspe~
[^sve Oeeje ceW Je=efæ nesleer nw~
1450. The shape of the transfer characteristic of
JFET is very nearly a: (b) the mobility of charge carriers decreases
JFET kesâ š^ebmeheâj efJeMes<eleeDeeW keâe Deekeâej Skeâ .......kesâ Ûeepe& kewâefjÙej kesâ ceesefyeefuešer ceW keâceer nesleer nw~
yengle heeme neslee nw– (c) the mobility of charge carriers increases
(a) hyperbola /DeeflehejJeueÙe Ûeepe& kewâefjÙej kesâ ceesefyeefuešer ceW Je=eæ
f nesleer nw~
(b) straight line/meerOeer jsKee (d) the transconductance increases
(c) parabola / hejJeueÙe š^evmekeâC[keäšsvme ceW Je=eæ
f nesleer nw~
(d) none of the above/ Ghejesòeâ ceW mes keâesF& veneR 1455. A junction FET, can be used as a voltage
variable resistor:
1451. In a JFET, increase in applied external bias to
the gate causes.: Skeâ pebkeäMeve FET, Skeâ Jeesušspe heefjJele&veMeerue ØeeflejesOe
Skeâ JFET ceW, iesš hej ØeÙegòeâ yeenjer yeeÙeme ceW Je=efæ kes â ™he ceW ØeÙegòeâ nes mekeâlee nw–
keâe keâejCe neslee nw– (a) at pinch-off condition/efhebÛe-Dee@heâ efmLeefle hej~
(a) decrease in size of depletion regions (b) beyond pinch-off voltage
ef[hueerMeve #es$e kesâ meeFpe ceW keâceer~ efhebÛe-Dee@heâ Jeesušspe mes Thej~
(b) increase in drain current/ [^sve Oeeje ceW Je=efæ~ (c) well below pinch-off condition
(c) decrease in channel resistance efhebÛe-Dee@heâ efmLeefle kesâ "erkeâ veerÛes~
Ûewveue ØeeflejesOe ceW keâceer~ (d) for any value of VDS /VDS kesâ efkeâmeer ceeve kesâ efueS~
(d) decrease in drain current to achieve pinch-off 1456. How is an N-channel junction field-effect
voltage. transistor operated as an amplifier?
efhebÛe Dee@heâ Jeesušspe Øeehle keâjves kesâ efueS [^sve Oeeje ceW Skeâ N- Ûewveue pebkeäMeve heâeru[ Fhesâkeäš š^ebefpemšj keâes Skeâ
keâceer~ SchueerheâeÙej kesâ ™he ceW kewâmes ØeÛeeefuele efkeâÙee peelee nw?
1452. JFET has main drawback of: (a) with a forward bias gate-source junction
JFET keâer cegKÙe keâefceÙeeb nQ– Skeâ De«e yeeÙeme iesš-meesme& pebkeäMeve kesâ meeLe~
Electrical 50000 (MCQ) Volume II 684 YCT
(b) with a reverse bias gate-source junction (c) complementary MOSFET/keâcheueercesvš^er cee@mehesâš
Skeâ heMÛe yeeÙeme iesš-meesme& pebkeäMeve kesâ meeLe~ (d) p-channel JFET/ p-Ûewveue JFET
(c) with an open gate-source junction 1461. The following statements refer to an N-channel
Skeâ Keguee iesš-meesme& pebkeäMeve kesâ meeLe~ FET operated in the active region:
(d) with a shorted gate-source junction efvecveefueefKele keâLeve meef›eâÙe #es$e ceW Dee@hejsšs[ Skeâ N-
Skeâ ueIegheefLele iesš-meesme& pebkeäMeve kesâ meeLe~ Ûewveue FET keâe meboYe& osles nQ–
1457. What is the main advantage of a JFET cascade 1. The gate voltage VGS reverse biases the
amplifier? junction.
Skeâ JFET kewâmkesâ[ SchueerheâeÙej keâe cegKÙe ueeYe keäÙee iesš Jeesušspe VGS pebkeäMeve keâes He§e yeeÙeme keâj oslee nw~
neslee nw? 2. The drain voltage VDD is negative with
(a) High voltage gain/GÛÛe Jeesušlee ueeYe~ respect to the sources./[^sve Jeesušspe VDD œeesle kesâ
(b) Low output impedance/efvecve efveie&le ØeefleyeeOee~ mebyebOe ceW $e+Ceelcekeâ neslee nw~
(c) Very low input capacitance 3. The current in the N-channel is due to
yengle efvecve Fvehegš Oeeefjlee~ electrons.
N-Ûewveue ceW Oeeje Fueskeäš^e@ve kesâ keâejCe nesleer nw~
(d) High input impedance/GÛÛe Fvehegš ØeefleyeeOee~
4. Increasing the reverse bias VGS increases the
1458. While BJT is a ________controlled device,
cross section for conduction./VGS He§e yeeÙeme ceW
MOS is a_______ controlled device–
peyeefkeâ BJT Skeâ ............ efveÙebef$ele GhekeâjCe nw, MOS yeÌ{ves mes Ûeeueve kesâ efueS ›eâe@me meskeäMeve yeÌ{ peelee nw~
Skeâ ......... efveÙebef$ele GhekeâjCe nw~ Which of these statements are correct?
FveceW mes keâewve mee keâLeve mener nw?
(a) minority carrier, majority carrier
DeuhemebKÙekeâ Jeenkeâ, yengmebKÙekeâ Jeenkeâ (a) 1 and 2/1 Deewj 2 (b) 1 and 3/1 Deewj 3
(b) current, voltage/Oeeje, Jeesušspe (c) 2 and 3/2 Deewj 3 (d) 3 and 4/3 Deewj 4
(c) charge, electron/ DeeJesMe, Fueskeäš^e@ve 1462. In regard to FET,
FET kesâ yeejs ceW .......
(d) majority carrier, minority carrier.
yengmebKÙekeâ Jeenkeâ, DeuhemebKÙekeâ Jeenkeâ (a) in P-channel depletion mode in the active
region, the control voltage is negative.
1459. The figure shown represents:
meef›eâÙe #es$e ceW P-Ûewveue ef[hueerMeve cees[ ceW keâvš^esue
efoKeeÙee ieÙee efÛe$e oMee&lee nw–
Jeesušspe, $e+Ceelcekeâ neslee nw~
(b) in N-channel depletion mode in the active
region, the control voltage is negative
meef›eâÙe #es$e ceW N-Ûewveue ef[hueerMeve cees[ ceW keâvš^esue
Jeesušspe, $e+Ceelcekeâ neslee nw~
(c) NMOS in enhancement mode is cut off for
(a) n-channel MOSFET/ n-Ûewveue cee@mehesâš VGS<0.
(b) enhanced-mode E-MOSFET SvnsvemeceWš cees[ ceW NMOS kesâ efueS keâš-Dee@heâ
Fvenwvme-cees[ E-cee@mehesâš VGS<0 neslee nw~
(c) p-channel MOSFET/p-Ûewveue cee@mehesâš (d) None of the above/ Ghejesòeâ ceW mes keâesF& veneR
(d) JFET 1463. An N-channel JFET, having a pinch-off voltage
1460. The figure shows the symbol of: (VP) of –5 V, shows a transconductance (gm) of
efÛe$e ……… keâe Øeleerkeâ oMee&lee nw– 1 mA/V when the applied gate-to source
voltage (VGS) is –3 V. Its maximum
transconductance (in mA/V) is :
Skeâ N-Ûewveue JFET, Skeâ –5 V keâe efhebÛe-Dee@heâ
Jeesušspe (VP) nesves hej, 1 mA/V keâe Skeâ
š^evmekeâC[keäšsvme ØeoefMe&le keâjlee nw, peye iesš-mes meesme&
Jeesušspe (VGS) hej –3 V Deejesefhele efkeâÙee peelee nw~
(a) p-channel depletion MOSFET
Fmekeâe DeefOekeâlece š^evmekeâC[keäšsvme (mA/V ceW) neslee
p-Ûewveue ef[hueerMeve cee@mehesâš nw–
(b) p- channel enhancement MOSFET (a) 1.5 (b) 2.0
p-Ûewveue Fvenwvmecesvš cee@mehesâš (c) 2.5 (d) 3.0
Electrical 50000 (MCQ) Volume II 685 YCT
1464. The FET shows is a : efvecveefueefKele ceW mes keâewve-mee keâLeve MOSFET kesâ efueS
FET ØeoefMe&le keâjlee nw, Skeâ– mener veneR nw?
(a) Are easy to parallel for higher current
GÛÛe Oeeje kesâ efueS meceeveevlej keâjvee Deemeeve neslee nw~
(b) Leakage current is relatively high
ueerkesâpe Oeeje meeceevÙele: GÛÛe nesleer nw~
(c) Have more linear characteristic
DeefOekeâ jwefKekeâ efJeMes<elee nw~
(a) Common drain/ keâe@ceve [^sve
(d) Overload and peak current handling
(b) Common gate / keâe@ceve iesš capability are high/heerkeâ Oeeje nwC[efuebie #ecelee Deewj
(c) Common source / keâe@ceve œeesle DeesJejuees[ GÛÛe nesleer nw~
(d) Common source follower / keâe@ceve œeesle heâe@ueesDej 1469. The regions of operation of a MOSFET to work
1465. The JFET in the circuit shown has an IDSS = 10 as a linear resistance and linear amplifier are:
mA, VP = 5 V. The value of the resistane RS for Skeâ jwefKekeâ ØeeflejesOe Deewj jwefKekeâ SchueerheâeÙej kesâ ™he
a drain current of IDS = 6.4 mA is : ceW keâece keâjves kesâ efueS MOSFET kesâ mebÛeeueve keâe #es$e
efoKeeS ieS meefke&âš JFET ceW IDSS = 10 mA, VP = 5 nw ............
V nw~ IDS = 6.4 mA keâer Skeâ [^sve Oeeje kesâ efueS RS (a) cut-off and saturation respectively
ØeeflejesOe keâe ceeve nw– ›eâceMe: keâš-Dee@heâ Deewj meble=hle~
(b) triode and cut-off respectively
›eâceMe: š^eÙees[ Deewj keâš-Dee@heâ~
(c) triode and saturation respectively
›eâceMe: š^eÙees[ Deewj meble=hle~
(d) saturation and triode respectively
›eâceMe: meble=hle Deewj š^eÙees[~
(a) 1.06 k Ω (b) 560 Ω 1470. When the drain voltage in an N-MOSFET is
(c) 470 Ω (d) 156 Ω negative, it is operating in:
1466. In a JFET, drain current is primiarily peye Skeâ N-cee@mehesâš ceW [^sve Jeesušlee $e+Ceelcekeâ nesleer
controlled by : nw , lees Ùen ........ ceW mebÛeeueve keâjlee nw–
Skeâ JFET ceW, [^sve Oeeje cegKÙe ™he mes efveÙebef$ele neslee (a) active region / meef›eâÙe #es$e
nw– (b) inactive region / efveef<›eâÙe #es$e
(a) size of depletion region (c) ohmic region / Deeseÿf ekeâ #es$e
ef[hueerMeve #es$e keâer meeFpe mes~ (d) reactive region / Øeefleef›eâÙeeMeerue #es$e
(b) channel resistance/Ûewveue ØeeflejesOe mes~ 1471. MOSFET can be used as a :
(c) gate reverse bias/iesš heMÛe yeeÙeme mes~ cee@mehesâš Skeâ ..... kesâ ™he ceW ØeÙegòeâ efkeâÙee pee mekeâlee
(d) voltage drop across channel nw–
Ûewveue kesâ S›eâe@me Jeesušlee [^ehe mes~ (a) current controlled capacitor.
1467. The figure shows the circuit symbol of : Oeeje efveÙeefv$ele mebOeeefj$e~
efÛe$e,.............. kesâ meefke&âš Øeleerkeâ keâes oMee&lee nw– (b) voltage controlled capacitor
Jeesušspe efveÙeefv$ele mebOeeefj$e~
(c) current controlled inductor/Oeeje efveÙeefv$ele ØesjCe~
(d) voltage controlled inductor/Jeesušspe efveÙeefv$ele ØesjCe
1472. In an MOS transistor, the gate source input
impedance is:
Skeâ MOS š^ebefpemšj ceW, iesš œeesle Fvehegš ØeefleyeeOee
neslee nw–
(a) FET (b) P-MOSFET 1. lower than the input impedance of a BJT
(c) C-MOSFET (d) N-MOSFET Skeâ BJT kesâ Fvehegš ØeefleyeeOee keâer leguevee ceW efvecve
1468. Which one of the following statements is not 2. higher than the input impedance of a BJT
correct for a MOSFET? Skeâ BJT kesâ Fvehegš ØeefleyeeOee keâer leguevee ceW GÛÛe
Electrical 50000 (MCQ) Volume II 686 YCT
3. lower than the input impedance of a JFET (d) a p-channel enhancement mode device
Skeâ JFET kesâ Fvehegš ØeefleyeeOee keâer leguevee ceW efvecve Skeâ p-Ûewveue Fvenwvmecesvš cees[ GhekeâjCe~
4. higher than the input impedance of a JFET 1476. Consider the following statements:
Skeâ JFET kesâ Fvehegš ØeefleyeeOee keâer leguevee ceW GÛÛe efvecveefueefKele keâLeveeW hej efJeÛeej keâjW–
Select the correct answer using the codes given 1. BJT is a current controlled device with a high
below: input impedance and high gain bandwidth. /
veerÛes efoS ieS keâes[ keâes ØeÙegòeâ keâj mener Gòej keâe ÛeÙeve BJT GÛÛe iesve yewC[efJe[dLe Deewj GÛÛe Fvehegš ØeefleyeeOee
keâjW– kesâ meeLe Skeâ Oeeje efveÙeefv$ele ef[JeeFme neslee nw~
(a) 1 alone/kesâJeue 1 (b) 2 and 3/2 Deewj 3 2. FET is a voltage controlled device with high
(c) 4 alone/kesâJeue 4 (d) 2 and 4/2 Deewj 4 input impedance and low gain band width./
FET efvecve iesve yewC[efJe[dLe Deewj GÛÛe Fvehegš ØeefleyeeOee
1473. Consider the following devices:
efvecveefueefKele GhekeâjCeeW hej efJeÛeej keâjW– kesâ meeLe Jeesušspe efveÙeefv$ele ef[JeeFme neslee nw~
3. UJT is a negative resistance device and can
1. BJT in CB mode / CB cees[ ceW BJT
be used as an oscillator./ UJT Skeâ $e+Ceelcekeâ
2. BJT in CE mode / CE cees[ ceW BJT ØeeflejesOe GhekeâjCe nw, pees Skeâ Dee@efmeuesšj kesâ ™he ceW
3. JFET ØeÙegòeâ efkeâÙee pee mekeâlee nw~
4. MOSFET
4. BJT, FET and UJT can all be used for
The correct sequence of these devices in amplification./ BJT, FET Deewj UJT meYeer
increasing order of their input impedances is:
SchueerefheâkesâMeve kesâ efueS ØeÙegòeâ efkeâÙes pee mekeâles nQ~
Fvekesâ Fvehegš ØeefleyeeOee kesâ Je=efæ kesâ ›eâce ceW Fvekesâ
Which of the statements given above are
GhekeâjCe keâe mener ›eâce nw...... correct?
(a) 1,2,3,4 (b) 2,1,3,4 Ghejesòeâ efoÙes ieÙes keâLeveeW ceW mes keâewve mee mener nw?
(c) 2,1,4,3 (d) 1,3,2,4
(a) 1 and 2/1 Deewj 2 (b) 2 and 3/2 Deewj 3
1474. The MOS equivalent of common collector
amplifier is: (c) 3 and 4/3 Deewj 4 (d) 1 and 4/1 Deewj 4
keâe@ceve meb«eenkeâ SchueerheâeÙej kesâ MOS kesâ meceeve neslee 1477. The lower turn of time of MOSFET, when
compare to a BJT can be attributed to which
nw–
one of the following?
(a) common drain amplifier/keâe@ceve [^sve SchueerheâeÙej BJT keâer leguevee ceW cee@mehesâš keâe efvecve šve&-Dee@heâ meceÙe
(b) emitter follower amplifier keâes efvecve ceW mes efkeâmekesâ efueS efpeccesoej ceevee ieÙee nw?
Glmepe&keâ heâe@ueesDej SchueerheâeÙej
(a) Input impedance /Fvehegš ØeefleyeeOee
(c) common gate amplifier/keâe@ceve iesš SchueerheâeÙej
(d) common source amplifier (b) Positive temperature coefficient
keâe@ceve meesme& SchueerheâeÙej Oeveelcekeâ leehe iegCeebkeâ
1475. The variation of drain current with gate-to- (c) Absence of minority carriers
source voltage (ID-VGS) characteristic of a DeuhemebKÙekeâ Jeenkeâ keâer DevegheefmLeefle
MOSFET is shown in the figure. The MOSFET (d) On-state resistance /Dee@ve mšsš ØeeflejesOe
is:
1478. How will electrons flow through a p-channel
MOSFET kesâ iesš-mes meesme& Jeesušspe (ID-VGS)
JFET?
efJeMes<elee kesâ meeLe [^sve Oeeje keâe heefjJele&ve efÛe$e ceW Skeâ P-Ûewveue JFET kesâ ceeOÙece mes Fueskeäš^e@veeW keâe
oMee&Ùee ieÙee nw~ MOSFET nw ØeJeen kewâmes nesiee?
(a) From source to drain/Œeesle mes [^sve lekeâ~
(b) From source to gate/Œeesle mes iesš lekeâ~
(c) From drain to gate/[^sve mes iesš lekeâ~
(d) From drain to source/[^sve mes Œeesle lekeâ~
(a) an n-channel depletion mode device 1479. When VGS = 0 V, a JFET is?
Skeâ n-Ûewveue ef[hueerMeve cees[ GhekeâjCe~ peye VGS = 0 V, Skeâ JFET nw?
(b) an n-channel enhancement mode device (a) an analog device / Skeâ Sveeuee@ie Ùegefòeâ
Skeâ n-Ûewveue Fvenwvmecesvš cees[ GhekeâjCe~ (b) cut off / keâš Dee@Heâ
(c) a p-channel depletion mode device (c) saturated / meble=hle
Skeâ p-Ûewveue ef[hueerMeve cees[ GhekeâjCe~ (d) an open switch / Skeâ Keguee efmJeÛe
Electrical 50000 (MCQ) Volume II 687 YCT
1480. When the JFET is no longer able to control the (c) to increase the output current
current, this point is called the? DeeGšhegš Oeeje yeÌ{eves kesâ efueS~
peye JFET Oeeje keâes efveÙebef$ele keâjves ceW me#ece veneR nw, (d) same as that of a load resistor
lees Fme efyevog keâes keâne peelee nw? Yeej ØeeflejesOekeâ kesâ meceeve~
(a) breakdown region / yeÇskeâ[eGve #es$e 1486. A U shaped, opposite-polarity material built
(b) depletion region / DeJe#eÙe hejle near a JFET-channel center is called the?
(c) saturated point / meble=hle efyevog JFET- Ûewveue kesâvõ kesâ heeme efveefce&òe Skeâ U- Deekeâej,
(d) pinch-off region / efhebÛe Dee@Heâ #es$e efJehejerle-OegÇJeerÙelee heoeLe& keâes keâne peelee nw?
1481. A JFET can operate in? (a) gate/iesš (b) block/yuee@keâ
Skeâ JFET…… ceW mebÛeeefuelenes mekeâlee nw? (c) drain/[^sve (d) heat sink/efnš efmebkeâ
(a) enhancement mode only / kesâJeue SvnebmeceWš cees[ 1487. MOSFET requires:
(b) depletion mode only / kesâJeue ef[hueermeve cees[ MOSFET keâer DeeJeMÙekeâlee nw–
(c) depletion and enhancement mode only (a) A large input current/Skeâ yeÌ[er Fvehegš Oeeje
kesâJeue ef[hueerMeve Deewj SvnebmeceWš cees[ (b) Only small input current/kesâJeue Úesšer Fvehegš Oeeje
(d) none of these/FveceW mes keâesF& veneR (c) A large input current and high voltage
1482. The properties of JFET resemble those of? Skeâ yeÌ[er Fvehegš Oeeje Deewj GÛÛe Jeesušspe
JFET kesâ iegCe FveceW mes ……….. kesâ meÂMe (meceeve) (d) None of these/FveceW mes keâesF& veneR
nw? 1488. An UJT can be used in the construction of?
(a) thermionic valves / T<ceerÙe JeeuJe Skeâ UJT kesâ efvecee&Ce ceW GheÙeesie efkeâÙee pee mekeâlee nw?
(b) NPN transistors / NPN š^e@efpemšj (a) an oscillator / Skeâ Dee@efmeuesšj
(c) PNP transistors / PNP š^e@efpemšj (b) an amplifier / Skeâ ØeJeOe&keâ
(d) UJT (c) Both (a) & (b) / oesveeW (a) & (b)
1483. Field effect transistor (FET) operates on? (d) a rectifier / Skeâ jskeäšerHeâeÙej
efHeâu[ Fhesâkeäš š^ebefpemšj (FET) efkeâme hej keâece keâjlee 1489. For a JFET, the value of VDS at which ID
nw? becomes essentially constant is the?
(a) majority carriers only / kesâJeue yengmebKÙekeâ Jeenkeâ~ JFET kesâ efueS VDS keâe ceeve efkeâme hej ID DeefveJeeÙe& ™he
(b) minority carriers only / kesâJeue DeuhemebKÙekeâ mes efmLej nes peelee nw?
Jeenkeâ~ (a) Pinch-off voltage/efhebÛe Dee@Heâ Jeesušspe
(c) positive charged ions only (b) Cut off voltage/keâš Dee@Heâ Jeesušspe
kesâJeue Oeveelcekeâ DeeJesMe DeeÙeve~ (c) Breakdown voltage/yeÇskeâ[eGve Jeesušspe
(d) on both majority and minority carriers (d) Ohmic voltage/Deesefÿekeâ Jeesušspe
DeuhemebKÙekeâ Deewj yengmebKÙekeâ Jeenkeâ oesveeW~ 1490. The amplification factor (µ) of JFET is equal?
1484. Avalanche breakdown in a diode occurs when? JFET keâe ØeJeOe&ve keâejkeâ (µ) yejeyej nw?
Skeâ [eÙees[ ceW SJeuee@vÛes yeÇskeâ[eGve keâye neslee nw? (a) gm/rd (b) gmrd
(a) potential barrier is reduced to zero (c) g r (d) rg
m d d m
efJeYeJe DeJejesOe MetvÙe nes ieÙee nw
(b) forward electric current exceeds certain value 1491. If rd = 10 KΩ,gm = 2 mho in a JFET, it's
De«eefJeÅegle Oeeje efveefMÛele ceeve mes DeefOekeâ neslee nw amplification factor is?
(c) reverse bias exceeds a certain value Ùeefo JFET ceW rd = 10 KΩ,gm = 2 mho nw, lees
efjJeme& yeeÙeme, Skeâ efveefMÛele ceeve mes DeefOekeâ neslee nw ØeJeæ&keâ keâejkeâ nw?
(d) none of the above/FveceW mes keâesF& Yeer veneR (a) 20 (b) 5
1485. The function of bleeder resistor in a power (c) 200 (d) 0.5
supply is? 1492. The main advantage of CMOS circuit is:
Meefòeâ keâer Deehetefle& ceW yueer[j ØeeflejesOe keâe keâeÙe& nw? CMOS heefjheLe keâe cegKÙe ueeYe nw–
(a) to ensure a minimum current drain in the (a) High voltage gain/GÛÛe Jeesušspe ueeYe
circuit / heefjheLe ceW Skeâ vÙetvelece [^sve Oeeje megefveefMÛele
(b) Low Power Consumption/keâce efyepeueer keâer Kehele
keâjves kesâ efueS~
(b) to increase the output dc voltage (c) Large Current/efJeMeeue Oeeje
DeeGšhegš [er.meer. Jeesušspe yeÌ{eves kesâ efueS~ (d) Large bandwidth/efJeMeeue yewC[efJe[dLe
Electrical 50000 (MCQ) Volume II 688 YCT
1493. N-channel FETs are superior to P-channel (a) NPN Transistor / NPN š^eBefpemšj
FETs, because: (b) UJT
N-Ûewveue FETs, P-Ûewveue FETs mes DeÛÚe neslee nw (c) JFET
keäÙeeWefkeâ– (d) MOSFET
(a) They have higher input impedance 1499. An example of a solid state device is a:
FveceW GÛÛe Fvehegš ØeefleyeeOee nesleer nw~ "esme DeJemLee Ùegefòeâ keâe GoenjCe nw-
(b) They have high switching time (a) Thyratron / LeeÙejsš^eve (b) Pentode / hesvšes[
FveceW GÛÛe efmJeefÛebie meceÙe neslee nw~ (c) FET/ hesâš (d) Triode/ š^eÙees[
(c) They consume less power 1500. Which of the following Transistor can be used
Ùes keâce Meefòeâ keâer Kehele keâjlee nw~ in enhancement mode?
(d) Mobility of electrons is greater than that of efvecve ceW mes keâewve mee š^eBefpemšj Fvnsvmecesvš cees[ ceW
holes
ØeÙegòeâ efkeâÙee pee mekeâlee nw?
Fueskeäš^e@ve keâer ieefleMeeruelee nesume mes DeefOekeâ nesleer nw~
(a) JFET (b) UJT
1494. For a JFET, when VDS is increased beyond the
(c) MOSFET (d) NPN Transistor
pinch of voltage, the drain current:
1501. IGFET is a:
JFET kesâ efueS peye VDS efhebÛe Deeheâ Jeesušspe mes DeefOekeâ
IGFET neslee nw Skeâ–
nes peelee nw lees [^sve Oeeje–
(a) Square law device / Jeie& efveÙece Ùegefòeâ
(a) increases / yeÌ{leer nw~
(b) Half power device / Deæ& Meefòeâ Ùegefòeâ
(b) decreases / Iešleer nw~
3 3
(c) remains constant/ efmLej nes peeleer nw~ (c) power law device/ Meefòeâ efveÙece Ùegefòeâ
(d) first decreases and then increases 2 2
henues Iešleer nw Deewj efheâj yeÌ{leer nw~ (d) Linear device/ jwefKekeâ Ùegefòeâ
1495. Which of the following is a unipolar device? 1502. Which of the following Transistor are affected
by static electricity?
efvecve ceW mes keâewve Skeâ OegÇJeerÙe Ùegefòeâ nw?
efvecve ceW mes keâewve mee š^eBefpemšj mLeweflekeâ efJeÅegle Éeje
(a) FET
(b) zener diode / peervej [eÙees[
ØeYeeefJele nesles nQ?
(a) UJT (b) FET
(c) PNP Transistor/ PNP š^eBefpemšj
(c) MOSFET (d) NPN Transistor
(d) all of the above/ Ghejesòeâ meYeer
1503. FET has offset voltage of about:
1496. For a large values of |VDS|, a FET- behaves as
FET keâe Dee@heâmesš Jeesušspe ueieYeie neslee nw–
|VDS| kesâ GÛÛe ceeve kesâ efueS FET........... keâer lejn
(a) 0.2 V (b) 0.6 V
JÙeJenej keâjlee nw~
(c) 1.1 V (d) 0 V
(a) Voltage controlled resistor
1504. The N channel MOSFET operates with:
Jeesušlee efveÙebef$ele ØeeflejesOekeâ~
N – Ûewveue ceemhesâš .......... kesâ meeLe ØeÛeeefuele neslee nw~
(b) Current controlled current source
Oeeje efveÙebef$ele Oeeje œeesle~ (a) –ve gate voltage / –ve iesš Jeesušlee
(c) Voltage controlled current source (b) +ve gate voltage / +ve iesš Jeesušlee
Jeesušlee efveÙebef$ele Oeeje œeesle~ (c) ±ve gate voltage/ ±ve iesš Jeesušlee
(d) Current controlled resistor
(d) zero gate voltage/ MetvÙe iesš Jeesušlee
Oeeje efveÙebef$ele ØeeflejesOekeâ~
1497. FET can be used as: 1505. N-channel type MOSFET is better than P-
FET ........... kesâ ™he ceW ØeÙegòeâ efkeâÙee pee mekeâlee nw– channel type MOSFET because
N- Ûewveue šeFhe ceemhesâš, P-Ûewveue šeFhe ceemhesâš mes
(a) Variable capacitor / heefjJeleea mebOeeefj$e
(b) Variable resistor / heefjJeleea ØeeflejesOekeâ yesnlej neslee nw keäÙeeWefkeâ–
(c) Constant voltage source / efmLej Jeesušlee œeesle (a) it is faster / Ùen lespe neslee nw
(d) negative resistance / $e+Ceelcekeâ ØeeflejesOe (b) it is TTL compatible / Ùen TTL mebiele nw
1498. A Transistor that can be use in enhancement (c) it has better noise immunity
mode is: FmeceW yesnlej Meesj Gvcegefòeâ nesleer nw~
Jen š^eBefpemšj efpemes Fvnsvme cees[ ceW ØeÙegòeâ efkeâÙee pee (d) it has better drive capability
mekeâlee nw- FmeceW yesnlej Ûeeueve #ecelee nesleer nw~
Electrical 50000 (MCQ) Volume II 689 YCT
1506. In the triode region of JFET, it behaves as: (a) holes/nesume
JFET kesâ š^eÙees[ #es$e ceW Ùen efkeâme ™he ceW JÙeJenej (b) electrons/Fueskeäš^e@vme
keâjlee nw? (c) positively charged ions /Oeveelcekeâ Ûeepe& DeeÙeve
(d) negatively charged ions /$e+Ceelcekeâ Ûeepe& DeeÙeve
(a) negative resistance device
1512. The zeners incorporated with the
$e+Ceelcekeâ ØeeflejesOe Ùegefòeâ encapsulations of some MOSFET are meant
(b) constant voltage / efveÙele Jeesušlee for:
(c) noise source / Meesj œeesle
kegâÚ cee@mehesâš kesâ kewâhmegueerkeâjCe kesâ meeLe Meeefceue peervej
keâer .......
(d) VVR
(a) reducing the cost / cetuÙe keâce nesleer nw~
1507. CMOS devices have special features of: (b) biasing the gate circuit
CMOS ÙegefòeâÙeeW ceW efJeMes<e ue#eCe nesles nQ- iesš heefjheLe yeeÙeme nes jner nw~
(a) low silicon area requirement (c) self-protecting the device against transients
efvecve DeeJeMÙekeâ efmeefuekeâe@ve #es$e š^eefCpeSCš kesâ efJe®æ ef[JeeFme mJeÙeb megjef#ele nesleer nw~
(d) None of the above/ Ghejesòeâ ceW mes keâesF& veneR~
(b) high voltage gain / GÛÛe Jeesušlee ueeYe
1513. The modified work function of an n-channel
(c) low input impedance/ efvecve Fvehegš ØeefleyeeOee MOSFET is –0.85 V. If the interface charge is
(d) high current gain/ GÛÛe Oeeje ueeYe 3×10–4 C/m2 and the oxide capacitance is 300
µF/m2, the flat band voltage is:
1508. A power MOSFET has three terminals called: Skeâ n-Ûewveue cee@mehesâš keâe ØeJeefOe&le keâeÙe& hebâkeäMeve
Skeâ hee@Jej ceemhesâš ceW leerve šefce&veue neslee nw pees –0.85 V nw~ Ùeefo Deevleefjkeâ Ûeepe& 3 × 10–4 C/m2 nw
keânueeles nQ– Deewj Dee@keämeeF[ Oeeefjlee 300 µF/m2 nw, lees heäuewš yewC[
(a) collector, emitter and base Jeesušlee nw......
meb«eenkeâ, Glmepe&keâ Deewj DeeOeej (a) –1.85V (b) –0.15V
(b) collector, emitter and gate (c) +0.15V (d) +1.85V
1514. The typical value of input impedance for JFET
meb«eenkeâ, Glmepe&keâ Deewj iesš is:
(c) drain, source and base/ [^sve, meesme& Deewj DeeOeej JFET kesâ efueS Fvehegš ØeefleyeeOee keâe efJeefMe° ceeve nw–
(d) drain, source and gate/ [^sve, meesme& Deewj iesš (a) 10 Ω (b) 100 Ω
(c) 10 kΩ (d) 100 MΩ
1509. At room temperature, a possible value for the
1515. The typical quiescent power dissipation of low-
mobility of electrons in the inversion layer of a power CMOS units is :
silicon n-channel MOSFET is : keâce–Meefòeâ CMOS FkeâeFÙeeW keâer efJeefMe° Meeble
keâcejs kesâ leeheceeve hej, Skeâ efmeefuekeâe@ve n-Ûewveue
(quiescent) Meefòeâ DeheJÙeÙe nw–
cee@mehesâš kesâ FveJepe&ve uesÙej ceW Fueskeäš^e@veeW keâer ceesefyeefuešer (a) 1 mW (b) 0.5 mW
kesâ efueS Skeâ mebYeJele: ceeve nw– (c) 2 nW (d) 50 nW
(a) 450 cm2/V-s (b) 1350 cm2/V-s 1516. CMOS logic has the property of:
2
(c) 1800 cm /V-s (d) 3600 cm2/V-s CMOS uee@efpekeâ keâe iegCe nw–
1510. The conduction loss versus device current (a) increased capacitance and delay
characteristic of a power MOSFET is best Oeeefjlee Deewj ef[ues yeÌ{elee nw~
approximated by:
(b) decreased area/#es$e Iešelee nw~
Skeâ Ûeeueve neefve keâer leguevee ceW Skeâ hee@Jej cee@mehesâš keâer
(c) high noise margin/GÛÛe vJee@Fpe ceeefpe&ve~
ef[JeeFme Oeeje efJeMes<elee meyemes DeÛÚer .......... mes
(d) low static power dissipation
Devegceeefvele neslee nw– keâce efmLej Meefòeâ DeheJÙeÙe~
(a) a parabola/Skeâ hejJeueÙe 1517. The threshold voltage of an n-channel
(b) a straight line/Skeâ meerOeer ueeFve MOSFET can be increased by:
(c) a rectangular hyperbola/Skeâ DeeÙeleekeâej Skeâ n-Ûewveue MOSFET keâer LeÇsMeesu[ Jeesušspe keâes
DeeflehejJeueÙe yeÌ{eÙee pee mekeâlee nw–
(d) an exponentially decaying function (a) increasing the channel dopant concentration.
Skeâ ÛejIeeleebkeâerÙe ef[kesâFËie hebâkeäMeve Ûewveue keâer [esheWš meevõlee yeÌ{ekeâj~
1511. A MOS capacitor made using p-type substrate (b) reducing the channel dopant concentration.
in the accumulation mode. The dominant Ûewveue keâer [esheWš meevõlee Iešekeâj~
charge in the channel is due to the presence of : (c) reducing the gate oxide thickness.
SkeäÙegceguesMeve cees[ ceW p-šeFhe meyemš^sš ØeÙegòeâ keâj Skeâ iesš Dee@keämeeF[ ceesšeF& Iešekeâj~
MOS mebOeeefj$e yeveeles nQ, lees Ûewveue ceW ØeYeeJeer Ûeepe& (d) reducing the channel length.
.......keâer GheefmLeefle kesâ keâejCe nesleer nw– Ûewveue keâer uecyeeF& Iešekeâj~
Electrical 50000 (MCQ) Volume II 690 YCT
1518. The drain to source current of an n-channel 1525. What is the input impedance of a common-gate
depletion MOSFET has : configured JFET?
Skeâ n-Ûewveue ef[hueerMeve MOSFET ceW [^sve mes meesme& JFET kesâ Skeâ keâe@ceveiesš keâe@efvHeâie[& keâe Fvehegš
Oeeje neslee nw– ØeefleyeeOee keäÙee nw?
(a) IDS = 0 at VGS = 0/VGS = 0 hej IDS = 0 (a) Very low/yengle keâce (b) Low/keâce
(b) IDS is negative maximum at VGS = 0 (c) High/GÛÛe (d) Very high/DeefleGÛÛe
VGS = 0 hej IDS $e+Ceelcekeâ DeefOekeâlece nw 1526. N-channel JFET contain:
(c) IDS = positive maximum VGS = 0 N-Ûewveue JFET ceW neslee nw–
VGS = 0 hej IDS Oeveelcekeâ DeefOekeâlece nw (a) number of P-type junctions
(d) IDS is in independent of VGS P-Øekeâej mebefOeÙeeW keâer mebKÙee~
IDS, VGS mes mJeleb$e jnlee nw~ (b) one P-type junction / Skeâ P- Øekeâej keâer mebefOe~
1519. If an NMOS acting as a switch in depletion (c) no P-type junction/ P-Øekeâej keâer keâesF& mebefOe veneR~
mode then: (d) two P-type junction/ oes P- Øekeâej keâer mebefOe~
Ùeefo NMOS ef[hueerMeve cees[ ceW efmJeÛe keâer lejn keâeÙe& 1527. The number of PN junction in a JFET is:
keâjlee nw leye– JFET ceW PN mebefOeÙeeW keâer mebKÙee nesleer nw–
(a) The device is cut-off for VGS = 0 (a) 1 (b) 2
VGS = 0 kesâ efueS ef[JeeFme keâš–Dee@heâ nes peelee nw~ (c) 3 (d) no junctions/keâesF& mebefOe veneR
(b) The device is cut-off for low VDS 1528. The region of ID/VDS characteristics are called
keâce VDS kesâ efueS ef[JeeFme keâš–Dee@heâ nes peelee nw~ Pinch off region where.
(c) The device is cut-off larger negative VGS ID/VDS DeefYeue#eCe kesâ #es$e keâes efhebÛe Dee@heâ #es$e keâne
DeefOekeâ $e+Ceelcekeâ VGS kesâ efueS ef[JeeFme keâš–Dee@heâ nes peelee nw, peneB–
peelee nw~ (a) ID increases/ID yeÌ{lee nw~
(d) The device is in saturation high values of VDS (b) ID & VDS are both constant
VDS kesâ GÛÛeceeve ceW ef[JeeFme meble=hle nes peelee nw~ ID Deewj VDS oesveeW efveÙele nw~
1520. A FET is essentially a __________
(c) ID is constant/ID efveÙele nw~
Skeâ FET DeefveJeeÙe& ™he mes nw–
(d) VDS constant/VDS efveÙele
(a) Current driven device /Oeeje mebÛeeefuele Ùegefòeâ
1529. The voltage gain of a given common source
(b) voltage driven device /Jeesušspe mebÛeeefuele Ùegefòeâ JEFT amplifier depends on its :
(c) power driven device/Meefòeâ mebÛeeefuele Ùegefòeâ efoÙes ieÙes keâe@ceve Œeesle JFET ØeJeOe&keâ keâe Jeesušlee
(d) None of these/FveceW mes keâesF& veneR ueeYe Fmekesâ ……… hej efveYe&j keâjlee nw–
1521. For a FET IDSS = 16 mA, VP = -8 V. The value (a) input impedance/Fvehegš ØeefleyeeOee
of transconductance (gm) for VGS = -4 V is
(b) amplification factor/ØeJeOe&ve iegCekeâ
Skeâ FET kesâ efueS IDSS = 16 mA, VP = -8 V. VGS =
(c) dynamic drain resistance/ieeflekeâ [^wve ØeeflejesOe
-4 V kesâ efueS š^ebmekebâ[keäšWme keâe ceeve nw
(d) drain load resistance /[^wve Yeej ØeeflejesOe
(a) 3500 µS (b) 2500 µS
(c) 2000 µS (d) 1500 µS *1530.A JFET is set up as a follower with µ = 200, rd
= 100 KΩ and source load resistor RL = 1 KΩ.
1522. For an FET, IDSS = 10 mA,VP=-4 V, then the
drain current ID for VGS = -2 V is : The output resistance Ro is :
Skeâ FET ceW, IDSS = 10 mA, VP = –4 V, leye VGS = JFET µ = 200, rd = 100 KΩ Deewj Œeesle Yeej
–2 V kesâ efueS [^sve Oeeje ID nw– Øeef l ejes
O e RL= 1 KΩ kesâ meeLe heâe@ueesDej kesâ ™he ceW mesš
(a) 2 mA (b) 2.5 mA ef k eâÙee peelee nw~ DeeGšhegš ØeeflejesOe Ro nw–
(c) 6 mA (d) 5 mA (a) 1,000 Ω (b) 500 Ω
1523. JFET has high input impedance because: (c) 333 Ω (d) 666 Ω
JFET ceW GÛÛe Fvehegš ØeefleyeeOee nw, keäÙeeWefkeâ– 1531. A source follower using a FET usually has a
(a) it is made up of semiconductor material voltage gain which is :
Ùen DeOe&Ûeeuekeâ heoeLe& mes yevee nw FET keâe GheÙeesie keâjles ngS Skeâ Œeesle heâe@ueesDej ceW
(b) input is reversed biased meeceevÙele: Jeesušlee ueeYe neslee nw, pees–
Fvehegš efjJeme& yee@Ùem[ ceW nQ~ (a) greater than + 100 / + 100 mes DeefOekeâ nw~
(c) of impurity atoms/DeMegæ hejceeCegDeeW keâer Jepen mes (b) slightly less than unity but positive /FkeâeF& mes
(d) none of these/FveceW mes keâesF& veneR LeesÌ[e keâce uesefkeâve Oeveelcekeâ nw~
1524. Which of following is the point of reference (c) exactly unity but negative/efyeukegâue FkeâeF& uesefkeâve
JFET? $e+Ceelcekeâ nw~
efvecveefueefKele ceW mes keâewve mee JFET kesâ mevoYe& keâe efyevog (d) about –10 /ueieYeie –10
nw? 1532. In an FET common-source high frequency
(a) Drain/[^sve amplifier, which one of the following is the
(b) Gate/iesš correct expression for input capacitance Ci ?
(c) Source/meesme& FET keâe@ceve Œeesle GÛÛe DeeJe=efòe ØeJeOe&keâ ceW, Fvehegš
(d) None of the above/FveceW mes keâesF& Yeer veneR Oeeefjlee Ci kesâ efueS efvecve ceW mes keâewve mener JÙebpekeâ nw?
Electrical 50000 (MCQ) Volume II 691 YCT
(a) Ci = Cgs + (1 − Av )Cgd (a) grounding rings are used which are removed
(b) Ci = Cgs + (1 − 1/ Av )Cgd only when it is wired securely into the circuit
(c) Ci = Cgd + (1 − Av )Cgs «eeGefC[bie efjbie ØeÙegòeâ keâer peeleer nw~ pees kesâJeue leye
(d) Ci = C gd + (1 − 1/ Av )C gs nšeÙeer peeleer ns peye Ùen heefjheLe cebs megjef#ele ™he mes
1533. After VDS reaches pinch-off value VP in a JeeÙej (wire) keâer peeleer nw~
JFET, drain current ID becomes : (b) it is inserted into conducting sponge during
JFET ceW VDS keâe efheÛe Dee@heâ Jeesušlee VP hej hengBÛeves
transit
kesâ yeeo, [^sve Oeeje nes ID peeleer nw–
š^ebefpeš kesâ oewjeve Ùen ÛeeuekeâerÙe mhebpe ceW [eueer peeleer nw~
(a) zero /MetvÙe (b) low /efvecve
(c) saturated /meble=hle (d) reversed /Gl›eâce (c) only source terminal is earthed during transit
1534. In a JFET, drain current in maximum when š^ebefpeš kesâ oewjeve kesâJeue œeesle šefce&veue Yetefceiele efkeâÙee
VGS is: peelee nw~
JFET ceW, [^sve Oeeje DeefOekeâlece nesleer nw peye VGS nes-
(d) bac–to-back Zenner diodes are formed into
(a) zero /MetvÙe
the monolithic structure of the MOSFET
(b) negative /$e+Ceelcekeâ
(c) positive /Oeveelcekeâ MOSFET kesâ ceesveesefueefLekeâ mebjÛevee ceW Skeâ kesâ efheÚs
(d) equal to VP/ VP kesâ yejeyej Skeâ peervej [eÙees[ efveefce&le nesles nQ~
1535. A JFET can be cut-off with the help of : 1539. The input gate current of a FET is :
................. keâer meneÙelee mes JFET keâš-Dee@heâ efkeâÙee FET keâer Fvehegš iesš Oeeje nesleer nw-
pee mekeâlee nw–
(a) VGS (b) VDS (a) a few microamperes /kegâÚ ceeF›eâes ScheerÙeme&
(c) VDG (d) VDD (b) negligibly small/veieCÙe™he mes keâce
1536. A D-MOSFET differs from a JFET in the sense
that it has no. (c) a few milliamperes/kegâÚ efceue ScheerÙeme&
D-MOSFET, JFET mes efkeâme meWme ceW efYevve neslee nw, (d) a few amperes/kegâÚ ScheerÙeme&
efkeâ FmeceW ..............veneR neslee nw~ 1540. For enhancement-only N-channel MOSFET,
(a) channel /Ûewveue polarity of VGS is:
(b) gate /iesš kesâJeue FvnsmecesCš N- Ûewveue MOSFET kesâ efueS VGS
(c) P-N junctions /P-N meefvOe
(d) substrate /meymeš^sš keâer OeÇgJelee nesleer nw–
1537. Grounding rings are used with MOSFETs in (a) negative /$e+Ceelcekeâ
order to : (b) positive /Oeveelcekeâ
................ kesâ efueS MOSFETS kesâ meeLe «eeGefC[bie
(c) zero /MetvÙe
efjbie ØeÙegkeäle keâer peeleer nw–
(d) dependent on the application of the device
(a) protect them against any physical injury
during transit /š^eBefpeš kesâ oewjeve GvnW efkeâmeer Yeeweflekeâ ÙegefkeäleÙeeW kesâ DevegØeÙeesie hej Deeefßele
Ûeesš kesâ efJe®æ megjef#ele jKeves 1541. Regarding application of dual–gate FET, which
(b) avoid any stray or static voltage at the gate statement is false?
which may destroy Sio2 layer/iesš hej mš^s Ùee og nje-iesš FET kesâ DevegØeÙeesie kesâ mecyevOe ceW, keâewve mee
mLeweflekeâ Jeesušlee mes yeÛeves cebs pees Sio2 hejle keâes #eefle«emle keâLeve DemelÙe nw?
keâj mekeâlee nw~ (a) it is ideal for mixer applications in
(c) protect them against any stray magnetic field communication receivers /mebÛeej efjmeerJeme& ceW
GvnW efkeâmeer mš^sš ÛegcyekeâerÙe #es$e kesâ efJe™æ megjef#ele jKeves efcekeämej DevegØeÙeesie kesâ efueS Ùen DeeoMe& neslee nw
(d) provide ground for eddy currents induced
between its terminals/Fmekesâ šefce&veue kesâ ceOÙe Øesefjle (b) it cannot be used in colour TV and stereo FM
Oeeje kesâ efueS Yet-Øeoeve keâjvee demodulators /Ùen jbieerve T.V. Deewj mšerefjÙees FM
1538. For protecting a MOSFET against damage [ercee[guesšme& ceW ØeÙegkeäle veneR efkeâÙee pee mekeâleele nw
from stray voltage developing at the gate, (c) it is used for AGC-driven IF amplifiers /Ùen
following methods are used. Pick out the one
AGC Ûeeefuele IF ØeJeOe&keâeW kesâ efueS ØeÙegkeäle efkeâÙee peelee
which is NOT correct.
iesš hej efJekeâefmele nesves Jeeues mš^s Jeesušspe mes Deefle kesâ nw~
efJe™æ MOSFET keâer megj#ee kesâ efueS efvecve efJeefOeÙeeb (d) due to its two independent gates, it has
GheÙeesie keâer peeleer nw~ pees mener veneR nw Gmes yeenj minimum cross modulation /Deheves mJeleb$e iesšdme
efvekeâeueW~ kesâ keâejCe FmeceW vÙetvelece ›eâe@me cee[guesMeve neslee nw
Electrical 50000 (MCQ) Volume II 692 YCT
(a) decreased / Iešleer nw~
4. Heâer[yewkeâ Deewj Dee@keämeeruesšj (b) increased / yeÌ{leer nw~
(Feedback and Oscillator) (c) remains unchanged / DeheefjJeefle&le jnleer nw~
(d) all the above / Ghejeskeäle ceW mes meYeer~
1542. A certain percentage of negative feedback does 1548. The term Av of an amplifier is called:
not yield a fixed reduction in gain because it efkeâmeer ØeJeOe&keâ keâe heo Av ................. keânueelee nw–
depends on
$e+Ceelcekeâ Heâer[yewkeâ keâer efveefMÛele ØeefleMelelee ueeYe ceW (a) feedback factor / Heâer[yewkeâ Hewâkeäšj
Skeâ efveefMÛele keâceer veneR oslee nw, keäÙeeWefkeâ Ùen efveYe&j (b) gain with feedback / Heâer[yewkeâ kesâ meeLe ueeYe
(c) gain without feedback / efyevee Heâer[yewkeâ kesâ ueeYe
keâjlee nw ............. hej
(d) loop gain / uethe ueeYe
(a) transistor configuration / š^ebefpemšj efJevÙeeme
1549. The oscillator circuit that uses a tapped coil in
(b) ambient temperature / JeeleeJejCe leeheceeve the tuned circuit is:
(c) initial value of gain / ueeYe kesâ ØeejefcYekeâ ceeve Jen oesefue$e heefjheLe pees šdÙetv[ heefjheLe ceW šwh[ kegâC[ueer
(d) leakage current of the transistor keâe GheÙeesie keâjlee nw, nw–
š^ebefpemšj keâer #ejCe Oeeje (a) multivibrator / ceušerJeeFyeÇsšj
1543. If the feedback factor of an amplifier is 0.1 and
gain without feedback is 40, then its gain with (b) Hartley / neš&ues
feedback is (c) Colpitts / keâe@ueefheó
Ùeefo efkeâmeer ØeJeOe&keâ keâe Heâer[yewkeâ Hewâkeäšj 0.1 nes Deewj (d) Armstrong / Dee@ce&mš^e@ie
efyevee Heâer[yewkeâ kesâ ueeYe 40 nw leye Heâer[yewkeâ kesâ meeLe 1550. The oscillator that uses tapped capacitors in
Fmekeâe ueeYe nw– the tuned circuit is:
(a) 8 (b) –13.3
Jen oesefue$e pees šdÙetv[ heefjheLe ceW šwh[ kewâheefmešj keâe
(c) 10 (d) 200 GheÙeesie keâjlee nw, nw–
1544. A large sacrifice factor in a negative feedback (a) Colpitts / keâe@ueefheó
amplifier leads to: (b) astable multivibrator / Smšsyeue ceušerJeeFyeÇsšj
$e+Ceelcekeâ Heâer[yewkeâ ØeJeOe&keâ ceW yeÌ[e mew›eâerHeâeFme iegCekeâ (c) Hartley / neš&ues
................. keâe vesle=lJe keâjlee nw– (d) Armstrong / Dee@ce&mš^eBie
(a) inferior performance / IeefšÙee efve<heeove 1551. For sustaining oscillations in an oscillator:
(b) increased output impedance efkeâmeer oesefue$e ceW efvejvlej oesueve kesâ efueS ...............
yeÌ{er ngF& DeeGšhegš ØeefleyeeOee (a) feedback factor should be unity
(c) characteristics impossible to achieve without Heâer[yewkeâ Hewâkeäšj FkeâeF& nesvee ÛeeefnS~
feedback (b) phase shift should be 00
efyevee Heâer[yewkeâ kesâ DemecYeJe DeefYeue#eCe Øeehle keâjvee Hesâpe efMeHeäš '00' nesvee ÛeeefnS~
(d) precise control over output (c) feedback should be negative
DeesJej DeeGšhegš hej mešerkeâ efveÙev$eCe Heâer[yewkeâ $e+Ceelcekeâ nesvee ÛeeefnS~
1545. Negative feedback in an amplifier: (d) both (a) and (b) / (a) Deewj (b) oesveeW~
efkeâmeer ØeJeOe&keâ ceW $e+Ceelcekeâ Heâer[yewkeâ– 1552. If Barkhausen criterion is not fulfilled by an
(a) lowers its lower 3dB frequency oscillator circuit, it will:
Fmekeâer efvecve 3dB DeeJe=efòe keâes efvecve keâjleer nw~ efkeâmeer oesefue$e heefjheLe Éeje Ùeefo yeeke&âneGmesve ceeheob[
(b) raises its upper 3dB frequency hetCe& veneR keâer peeleer nw lees, Ùen–
Fmekeâer Dehej 3dB DeeJe=efòe keâes yeÌ{eleer nw~ (a) stop oscillating / oesueve keâjvee yevo keâj osieer~
(c) increases it bandwidth
(b) produce damped waves continuously
Fmekeâer yewC[ ÛeewÌ[eF& yeÌ{leer nw~
(d) all of the above /Ghejeskeäle ceW mes meYeer~
efveÙele¤he mes DeJecebefole lejbie Glhevve keâjsieer~
1546. Negative feedback reduces distortion in an (c) become an amplifier / ØeJeOe&keâ nes peeSieer~
amplifier only when it: (d) produce high-frequency whistles
$e+Ceelcekeâ Heâer[yewkeâ efkeâmeer ØeJeOe&keâ ceW kesâJeue efJe¤heCe GÛÛe DeeJe=efòe meeršer keâe Glheeove keâjsieer~
keâes keâce keâjleer nw peye Ùen– 1553. Frequency stability in an oscillator can be
achieved by:
(a) comes as part of input signal
Fvehegš efmeiveue kesâ Yeeie kesâ ¤he ceW Deeleer nw~ oesefue$e ceW DeeJe=efòe mLeeefÙelJe .......... kesâ Éeje Øeehle keâer
(b) is part of its output pee mekeâleer nw–
Deheves DeeGšhegš keâe Yeeie nw~ (a) adjusting the phase shift
(c) is generated within it Hesâpe efMeHeäš keâes meceeÙeesepf ele keâjkesâ
FmeceW Glhevve keâer peeleer nw~ (b) controlling its gain
(d) exceeds a certain safe level Fmekesâ ueeYe keâes efveÙebef$ele keâjkesâ
Skeâ efveefMÛele megjef#ele mlej mes DeefOekeâ nes~ (c) incorporating a tuned circuit
1547. In a voltage shunt feedback, the input šdÙetv[ heefjheLe keâes Meeefceue keâjkesâ
impedance is: (d) employing automatic biasing
Jeesušlee MeCš Heâer[yewkeâ ceW, Fvehegš ØeefleyeeOee– mJeÛeeefuele yeeÙeefmebie keâe GheÙeesie keâjkesâ
Electrical 50000 (MCQ) Volume II 693 YCT
1554. Gain stability in an oscillator is usually 1560. Regarding negative feedback in amplifiers
achieved by: which statement is WRONG?
efkeâmeer oesefue$e ceW ueeYe mLeeefÙelJe meeceevÙele: ............ kesâ ØeJeOe&keâeW ceW $e+Ceelcekeâ Heâer[yewkeâ kesâ mecyevOe ceW keâewve-mee
Éeje Øeehle keâer mekeâleer nw– keâLeve ieuele nw?
(a) using low-Q circuits (a) it widens the separation between 3 dB
efvecve Q heefjheLe keâe GheÙeesie keâjkesâ frequencies
(b) incorporating a tuned circuit 3 dB DeeJe=efòeÙeeW kesâ ceOÙe DeueieeJe keâes Ùen yeÌ{elee nw~
šdÙetv[ heefjheLe keâes Meeefceue keâjkesâ (b) it increases the gain-bandwidth product
(c) using negative feedback Ùen ueeYe-yewC[ ÛeewÌ[eF& yeÌ{elee nw~
$e+Ceelcekeâ Heâer[yewkeâ keâe GheÙeesie keâjkesâ (c) it improves gain stability
(d) controlling the gain / ueeYe keâes efveÙebef$ele keâjkesâ Ùen ueeYe mLeeefÙelJe yeÌ{elee nw~
1555. The fundamental requirement for oscillations (d) it reduces distortion Ùen efJe¤heCe keâce keâjlee nw~
in an amplifier is : 1561. The shunt-derived series-fed feedback in an
efkeâmeer ØeJeOe&keâ ceW oesueve kesâ efueS cetue DeeJeMÙekeâleeSb amplifier:
nQ– efkeâmeer ØeJeOe&keâ ceW MeCš-JÙeglhevve ßesCeer Deehetefle&le
(a) positive feedback from output to input Heâer[yewkeâ–
DeeGšhegš mes Fvehegš lekeâ Oeveelcekeâ Heâer[yewkeâ (a) increases its output impedance
(b) negative feedback from output to input
DeeGšhegš mes Fvehegš lekeâ $e+Ceelcekeâ Heâer[yewkeâ Fmekeâer DeeGšhegš ØeefleyeeOee yeÌ{elee nw~
(c) ample power gain of the amplifier (b) decreases its output impedance
ØeJeOe&keâ keâe heÙee&hle Meefkeäle ueeYe Fmekeâer DeeGšhegš ØeefleyeeOee Iešelee nw~
(c) increases its input impedance
(d) all the above / Ghejeskeäle ceW mes meYeer
1556. Crystal oscillators are often used for providing: Fmekeâer Fvehegš ØeefleyeeOee yeÌ{elee nw~
ef›eâmšue oesefue$e ØeeÙe: ........... Øeoeve keâjves nsleg ØeÙegkeäle (d) both (b) and (c) / (b) Deewj (c) oesveeW~
nesles nQ– 1562. The value of negative feedback fraction is
always ............
(a) square wave output / Jeie& lejbie DeeGšhegš $e+Ceelcekeâ Heâer[yewkeâ Yeeie keâe ceeve meowJe .........neslee
(b) triangular wave output / ef$ekeâesCeerÙe lejbie DeeGšhegš
(c) stable carrier wave in radio transmitters
nw–
jsef[Ùees š^ebmeceeršj ceW mšsyeue kewâefjÙej lejbie (a) less than 1 / 1 mes keâce
(d) frequency multiplication (b) more than 1 / 1 mes pÙeeoe
DeeJe=efòe ceušerhueerkesâMeve (c) equal to 1 / 1 kesâ yejeyej
1557. If the frequency of incoming rectangular waves (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR
in a stairecase generator is 100 Hz, the number 1563. The gain of an amplifier without feedback is
of steps in the output staircase pattern is: 100 dB. If a negative feedback of 3 dB is
mšsÙejkesâme peefve$e ceW Deeves Jeeueer DeeÙeleekeâej lejbie keâer applied, the gain of the amplifier will become
DeeJe=efòe Ùeefo 100 Hz nw, lees DeeGšhegš mšsÙejkesâme hewšve& .............
hej ÛejCeeW keâer mebKÙee nw– efyevee Heâer[yewkeâ kesâ efkeâmeer ØeJeOe&keâ keâe ueeYe 100 dB nw~
(a) 100 (b) 200 Ùeefo 3 dB keâe $e+Ceelcekeâ Heâer[yewkeâ ØeÙegkeäle efkeâÙee peelee
(c) 500 (d) 50 nw lees ØeJeOe&keâ keâe ueeYe ............... nes peeSiee–
1558. One of the advantages of a Darlington pair is (a) 101.5 dB
that it has enormous ............... transformation (b) 300 dB
capacity: (c) 103 dB
[eefueËiešve Ùegice keâe Skeâ ueeYe Ùen nw, efkeâ FmeceW DeefOekeâ (d) 97 dB
............... ¤heeblejCe #ecelee nesleer nw– 1564. If the feedback of an amplifier is 0.01, then
(a) voltage / Jeesušlee voltage gain with negative voltage feedback is
(b) current / Oeeje approximately .............
(c) impedance / ØeefleyeeOee Ùeefo efkeâmeer ØeJeOe&keâ keâe Heâer[yewkeâ DebMe 0.01 nw, leye
(d) power / Meefkeäle $e+Ceelcekeâ Jeesušlee Heâer[yewkeâ kesâ meeLe Jeesušlee ueeYe
1559. Closed-loop gain of a feedback amplifier is the ueieYeie ............... nesiee–
gain obtained when : (a) 500 (b) 100
Heâer[yewkeâ ØeJeOe&keâ keâe yevo uethe ueeYe, Øeehle ueeYe nw (c) 1000 (d) 5000
peye– 1565. The gain of an amplifier with feedback is
(a) its output terminals are closed known as ........... gain:
Fmekesâ DeeGšhegš šefce&veue yevo nes~ Heâer[yewkeâ kesâ meeLe efkeâmeer ØeJeOe&keâ keâe ueeYe ...........
(b) negative feedback is applied ueeYe kesâ ¤he ceW peevee peelee nw–
$e+Ceelcekeâ Heâer[yewkeâ ØeÙegkeäle efkeâÙee peeS~ (a) resonant / Devegveeo
(c) feedback loop is closed
Heâer[yewkeâ uethe yevo nes~ (b) open loop / Keguee uethe
(d) feedback factor exceed unity (c) closed loop / yevo uethe
Heâer[yewkeâ Hewâkeäšj FkeâeF& mes pÙeeoe nes~ (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR
Electrical 50000 (MCQ) Volume II 694 YCT
1566. When voltage feedback (negative) is applied to 1572. If the input impedance of an amplifier is Zin
an amplifier, its input impedance ............ without feedback, then with negative voltage
peye Jeesušlee Heâer[yewkeâ ($e+Ceelcekeâ) efkeâmeer ØeJeOe&keâ hej feedback, its value will be .............
ØeÙegkeäle efkeâÙee peelee nw lees Fmekeâer Fvehegš ØeefleyeeOee– Ùeefo efkeâmeer ØeJeOe&keâ keâe efyevee Heâer[yewkeâ kesâ Fvehegš
(a) is decreased / Ieš peeleer nw~ ØeefleyeeOee Zin nes leye $e+Ceelcekeâ Jeesušlee Heâer[yewkeâ
(b) is increased / yeÌ{ peeleer nw~ Jeesušlee kesâ meeLe Fmekeâe ceeve nesiee–
(c) remains the same / meceeve yeveer jnleer nw~ Zin
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~ (a) (b) Zin (1+AV mv)
1 + AV mV
1567. When current feedback (negative) is applied to
an amplifier, its output impedance ........... 1 + AV mV
(c) (d) Zin (1–AV mv)
peye Oeeje Heâer[yewkeâ ($e+Ceelcekeâ) efkeâmeer ØeJeOe&keâ hej Zin
ØeÙegkeäle efkeâÙee peelee nw lees Fmekeâer DeeGšhegš 1573. Feedback circuit .............. frequency.
ØeefleyeeOee............... Heâer[yewkeâ heefjheLe DeeJe=efòe ...............
(a) is increased / yeÌ{ peeleer nw~ (a) is independent of
(b) is decreased / Ieš peeleer nw~ mes mJeleb$e neslee nw~
(c) remains the same / meceeve yeveer jnleer nw~ (b) is strongly dependent on
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~ hej ÂÌ{lee mes efveYe&j keâjlee nw~
1568. If voltage feedback (negative) is applied to an (c) is moderately dependent on
amplifier, its output impedance ............ hej ceOÙece ¤he mes efveYe&j keâjlee nw~
Ùeefo Jeesušlee Heâer[yewkeâ ($e+Ceelcekeâ) efkeâmeer ØeJeOe&keâ hej (d) none of the above
ØeÙegkeäle efkeâÙee peelee nw lees Fmekeâer DeeGšhegš ØeefleyeeOee– Ghejeskeäle ceW mes keâesF& veneR~
(a) remains the same / meceeve jnleer nw~ 1574. The basic purpose of applying negative voltage
feedback is to ................
(b) is increased / yeÌ{ peeleer nw~ $e+Ceelcekeâ Jeesušlee Heâer[yewkeâ ØeÙegkeäle keâjves keâe cetue
(c) is decreased / Ieš peeleer nw~ GodosMÙe neslee nw–
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
(a) increase voltage gain / Jeesušlee ueeYe yeÌ{eves~
1569. If AV and Afb are the voltage gains of an
amplifier without feedback and with negative (b) reduce distortion / efJe¤heCe keâce keâjves~
feedback respectively, then feedback fraction is (c) keep the temperature within limits
............... leeheceeve keâes meercee kesâ Yeerlej jKeves~
Ùeefo AV Deewj Afb efkeâmeer ØeJeOe&keâ keâe efyevee Heâer[yewkeâ (d) none of the above / Ghejeskeäle ceW mes keâesF& veneR~
Deewj $e+Ceelcekeâ Heâer[yewkeâ kesâ meeLe ›eâceMeeesušlee ueeYe 1575. An electronic oscillator is:
nw, leye Heâer[yewkeâ DebMe nw– Skeâ Fueskeäš^e@efvekeâ oesefue$e neslee nw–
1 1 1 1 (a) a converter of A.C. to D.C. energy
(a) – (b) + A.C. mes D.C. Tpee& keâveJeš&j
A V A fb A V A fb
(b) an amplifier with feedback
AV 1 1 1 Heâer[yewkeâ kesâ meeLe ØeJeOe&keâ
(c) + (d) –
A fb A V A fb A V (c) just like an alternator
1570. In the expression for voltage gain with negative ØelÙeeJele&keâ keâer lejn
voltage feedback, the term 1 + Av mv is known (d) nothing but an amplifier
as ............. kegâÚ veneR uesefkeâve Skeâ ØeJeOe&keâ
$e+Ceelcekeâ Jeesušlee Heâer[yewkeâ meeLe Jeesušlee ueeYe kesâ 1576. By varying which of the following the RF
efueS JÙebpekeâ ceW šce& 1 + Av mv .............. kesâ ¤he ceW feedback oscillator are usually tuned?
peevee peelee nw– efvecve ceW mes efkeâmes heefjJeefle&le keâjles ngS RF Heâer[yewkeâ
(a) gain factor / ueeYe keâejkeâ oesefue$e meeceevÙele: šdÙetve efkeâS peeles nQ?
(b) feedback factor / Heâer[yewkeâ Hewâkeäšj (a) Load impedance / Yeej ØeefleyeeOee
(c) sacrifice factor / mesef›eâheâeFme hewâkeäšj (b) Bias / DeefYeveefle
(d) none of the above / Ghejeskeäle ceW mes keâesF& veneR (c) L or C / L Ùee C
1571. If the output impedance of an amplifier is Zout
without feedback, then with negative voltage (d) Supply voltage / Deehetefle& Jeesušlee
feedback, its value will be .............. 1577. ............... oscillator has the best frequency
Ùeefo efkeâmeer ØeJeOe&keâ keâe efyevee Heâer[yewkeâ kesâ DeeGšhegš stability and accuracy:
ØeefleyeeOee Zout nw leye $e+Ceelcekeâ Jeesušlee Heâer[yewkeâ kesâ ................. oesefue$e ceW meyemes DeÛÚer DeeJe=efòe Deewj
meeLe Fmekeâe ceeve ................. nesiee– ÙeLeeLe&lee nesleer nw–
Zout (a) Tickler feedback / efškeâuej Heâer[yewkeâ~
(a) (b) Zout (1+AV mv)
1 + AV mV (b) Crystal controlled / ef›eâmšue efveÙebef$ele~
1 + AV mV (c) Colpitts / keâe@ueefheó~
(c) (d) Zout (1–AV mv)
Zout (d) Hartley / neš&ues~
Electrical 50000 (MCQ) Volume II 695 YCT
1578. Surface Acoustic wave oscillators are suitable 1584. Which one of the following multivibrators does
for: not require input clock pulse or trigger?
melen Skeâe@efmškeâ lejbie oesefue$e ............ kesâ efueS efvecve ceW mes efkeâme ceušerJeeFyeÇsšj ceW Fvehegš keäuee@keâ heume
GheÙegkeäle nesles nQ– Ùee efš^iej keâer DeeJeMÙekeâlee veneR nesleer nw?
(a) I-C applications / I.C DevegØeÙeesie (a) monostable/ceesveesmšsyeue
(b) low power oscillations / efvecve Meefkeäle oesueve (b) bi-stable/yeeF&-mšsyeue
(c) low frequency oscillations / efvecve DeeJe=efòe oesueve (c) astable/Smšsyeue
(d) non-sinusoidal wave forms / DepÙeeJe›eâerÙe lejbie¤he (d) flip-flop/efheäuehe-heäuee@he
1579. Due to which of the following the crystal 1585. The multivibrators circuit which possesses one
frequency is very stable? stable state and one quasi-stable state is :
efvecve ceW mes efkeâme keâejCe mes ef›eâmšue DeeJe=efòe yengle Jen ceušerJeeFyeÇsšj heefjheLe efpemeceW Skeâ mšsyeue DeJemLee
mLeeÙeer nesleer nw? Deewj Skeâ keäJee@meer mšsyeue DeJemLee nesleer nQ–
(a) Structure of crystal / ef›eâmšue keâer mebjÛevee (a) astable/Smšsyeue
(b) Rigidity of crystal / ef›eâmšue keâer ÂÌ{lee (b) monostable/ceesveesmšsyeue
(c) High Q of crystal / ef›eâmšue keâer GÛÛe Q (c) bistable/yeeFmšsyeue
(d) Size of crystal / ef›eâmšue keâe Deekeâej (d) Schimitt trigger circuit/efMeefceš efš^iej heefjheLe
1580. Parasitic oscillations can be suppressed by 1586. Which of the following circuits is used for
using which of the following? converting a sine wave into a square wave?
efvecve ceW mes efkeâmekeâe GheÙeesie keâjles ngS hewjeefmeefškeâ efvecve ceW mes keâewve-mee heefjheLe pÙee-lejbie keâes Jeie& lejbie ceW
oesueve keâe oceve efkeâÙee pee mekeâlee nw? heefjJeefle&le keâjves kesâ efueS ØeÙegòeâ keâer peeleer nw?
(a) Metal casing for oscillators (a) Monostable multivibrator/ceesveesmšsyeue
oesefue$e kesâ efueS Oeeleg kesâefmebie~ ceušerJeeFyeÇsšj
(b) Earth connection for chassis (b) Bistable multivibrator/yeeFmšsyeue ceušerJeeFyeÇsšj
Ûesefmeme kesâ efueS Yet-mebÙeespeve~ (c) Schimitt trigger circuit/efMeefceš efš^iej heefjheLe
(c) Low value capacitor / efvecve ceeve mebOeeefj$e~ (d) Darlington complementary pair/[eefueËiešve
(d) Separate tank circuit / Deueie šQkeâ heefjheLe~ keâchueerceWš^er Ùegice
1581. Which of the following are the two main parts 1587. Consider the following statements :
of a tank circuit? efvecve keâLeveeW hej efJeÛeej keâjW–
efvecve ceW mes keâewve šQkeâ heefjheLe kesâ oes cegKÙe Yeeie nQ? 1. Astable multivibrator can be used for
generating square wave
(a) R and L / R Deewj L
Smšsyeue ceušerJeeFyeÇsšj, Jeie& lejbie GlheVe keâjves nsleg ØeÇÙegòeâ
(b) R and C / R Deewj C efkeâÙee peelee nw~
(c) L and C / L Deewj C 2. Bistable multivibrator can be used for storing
(d) None of the above / Ghejeskeäle ceW mes keâesF& veneR binary information
1582. An oscillator can stop oscillating under which yeeFmšsyeue ceušerJeeFyeÇsšj, yeeFvejer metÛevee keâes meb«eefnle keâjves
of the following conditions? nsleg ØeÙegòeâ efkeâÙee peelee nw~
efvecve ceW mes efkeâme Mele& kesâ lenle oesefue$e oesueve keâjvee Which of these statements (s) is / are correct ?
®keâ mekeâlee nw? FveceW mes keâewve-mee keâLeve mener nw?
(a) 1 only /kesâJeue 1
(a) Elimination of triggered pulses
(b) 2 only /kesâJeue 2
efš^ie[& heume kesâ efvejekeâjCe~
(b) Reduction in transistor gain (c) both 1 and 2 /1 Deewj 2 oesveeW
š^ebefpemšj ueeYe ceW keâceer~ (d) neither 1 nor 2 / ve lees 1 Deewj ve lees 2
(c) Increase in transistor gain 1588. The type of multivibrator used for generation
š^ebefpemšj ueeYe ceW Je=efæ~ of clock pulses is :
(d) None of the above
keäuee@keâ heumesme keâes GlheVe keâjves nsleg ØeÙegòeâ
Ghejeskeäle ceW mes keâesF& veneR~ ceušerJeeFyeÇsšj keâe Øekeâej nw–
1583. The frequency of oscillation in case of RC a (a) monostable multivibrator /ceesveesmšsyeue
phase-shift oscillator is given by: ceušerJeeFyeÇsšj
RC Hesâpe efMeHeäš oesefue$e kesâ ceeceues ceW oesueve keâer (b) astable multivibrator /Smšsyeue ceušerJeeFyeÇsšj
DeeJe=efòe .............. kesâ Éeje oer peeleer nw– (c) bistable multivibrator /yeeFmšsyeue ceušerJeeFyeÇsšj
(a) 2 / π RC (d) none of these above /Ghejesòeâ ceW mes keâesF& veneR
(b) 2π RC 1589. The figure given below shows the circuit of
which one of the following?
(c) 1/ 2πRC 6 veerÛes efoÙee ieÙee efÛe$e efvecve ceW mes keâewve-mes heefjheLe keâes
(d) 1/ 2πR C ØeoefMe&le keâjlee nw?
Electrical 50000 (MCQ) Volume II 696 YCT
(a) when it is given as input to a monostable
multivibrator/peye Ùen ceesveesmšsyeue ceušerJeeFyeÇsšj keâes
Fvehegš kesâ ™he ceW efoÙee peelee nw~
(b) when it is given as triggering signal to a
bistable multivibrator/peye Ùen yeeFmšsyeue
(a) Bistable multivibrator/yeeFmšsyeue ceušerJeeFyeÇsšj ceušerJeeFyesÇšj keâes efš^ie[& efmeiveue kesâ ™he ceW efoÙee peelee
(b) Schimitt trigger /efMeefceš efš^iej nw~
(c) Monostable multivibrator/ceesveesmšsyeue (c) when it is used as input to a Schimitt
ceušerJeeFyeÇsšj trigger/peye Ùen efMeefceš efš^iej nsleg Fvehegš kesâ ™he ceW
(d) Astable multivibrator /Smšsyeue ceušerJeeFyeÇsšj ØeÙegkeäle efkeâÙee peelee nw~
1590. A blocking oscillator (d) when it is used as input to a pulse transformer
Skeâ yuee@efkebâie Dee@efmeuesšj– /peye Ùen heume š^ebmeheâe@ce&j kesâ efueS Fvehegš kesâ ™he ceW
(a) is a triggered oscillator /efš^ie[& Dee@efmeuesšj neslee nw~ ØeÙegòeâ efkeâÙee peelee nw~
1595. Narrow pulses with adjustable mark to space
(b) generates sinusoidal waves/pÙeeJe›eâerÙe lejbies GlheVe
ratio can be obtained from square wave input
keâjlee nw~ signal by using which of the following?
(c) is an amplifier with a negative feedback efvecve ceW mes efkeâmekeâe GheÙeesie keâjles ngS meceeÙeespÙe ceeke&â
/$e+Ceelcekeâ heâer[yewkeâ kesâ meeLe Skeâ heÇJeOe&keâ nw~ Deewj mhesme Devegheele Jeeueer mebkeâerCe& heumesme, Jeie& lejbie
(d) produces very sharp and narrow pulses/yengle Fvehegš efmeiveue mes Øeehle keâer pee mekeâleer nw?
lespe Deewj mebkeâerCe& heumesme GlheVe keâjlee nw~ 1. Schimitt trigger/efMeefceš efš^iej
*1591.In the Schimitt trigger circuit shown in the
figure, if VCE (sat) = 0.1 V, the output logic low 2. Monostable multivibrator /ceesveesmšsyeue ceušerJeeFyeÇsšj
level (VOL) is 3. Clippers/keäueerheme&
efÛe$e ceW ØeoefMe&le efMeefceš efš^iej heefjheLe ceW, Ùeefo VCE (sat) Select the correct answer using the codes given
= 0.1 V, leye DeeGšhegš leeefke&âkeâ efvecve mlej (VOL) nw– below :
veerÛes efoÙes ieÙes keâes[es keâe GheÙeesie keâjles ngS mener Gòej
keâe ÛeÙeve keâjW–
(a) only 1 /kesâJeue 1
(b) only 2 /kesâJeue 2
(c) 1 and 2 /1 Deewj 2
(d) 2 and 3 /2 Deewj 3
1596. A relaxation oscillator is one which
efjuewkeämesMeve Dee@efmeuesšj Jen neslee nws–
(a) has two stable states
efpemeceW oes mLeeÙeer DeJemLeeSb nesleer nQ~
(a) 1.25 V (b) oscillates continuously
(b) 1.35 V pees melele ™he mes oesueve keâjlee nw~
(c) 2.50 V (c) relaxes indefinitely
(d) 5.00 V pees Deefveef§ele keâeue lekeâ efkeßeece keâjlee nw~
1592. Schimitt trigger is basically (d) produces nonsinusoidal output
efMeefceš efš^iej cetuele: neslee nw– pees DepÙeeJe›eâerÙe DeeGšhegš GlheVe keâjlee nw~
(a) an astable multivibrator/Skeâ Smšsyeue 1597. The circuit diagram shown in the figure
ceušerJeeFyeÇsšj consists of transistor in :
(b) a monostable multivibrator/ceesveesmšsyeue efÛe$e ceW efoKeeÙes ieÙes meefke&âš DeejsKe ceW š^ebefpemšj Meeefceue
ceušerJeeFyeÇsšj nw–
(c) a bistable multivibrator /yeeFmšsyeue ceušerJeeFyeÇsšj
(d) an oscillator /Skeâ oesefue$e
1593. The other name of one shot vibrator is
Skeâ Mee@š JeeFyeÇsšj keâe DevÙe veece nw–
(a) Schimitt trigger/efMeefceš efš^iej
(b) monostable multivibrator/ceesveesmšsyeue
ceušerJeeFyeÇsšj
(c) bistable multivibrator /yeeFmšsyeue ceušerJeeFyeÇsšj
(d) astable multivibrator /Smšsyeue ceušerJeeFyeÇsšj
1594. Pulses of definite width can be obtained from (a) parallel connection / meceeveeblej keâveskeäMeve ceW
irregular shaped pulses (b) cascode connection / keâe@mkeâes[ keâveskeäMeve ceW
efveef§ele ÛeewÌ[eF& keâer heumesme DeefveÙeefcele Deekeâej kesâ (c) Darlington connection / [eefueËiešve keâveskeäMeve ceW
heumesme Éeje Øeehle keâer pee mekeâleer nw– (d) cascade connection / keâe@mkesâ[ keâveskeäMeve ceW
Electrical 50000 (MCQ) Volume II 697 YCT
1598. The main drawback in the performance of 1603. Consider the following statements regarding a
shunt peaked wideband amplifier is : differential amplifier using a FET pair. The
Mebš heerkeâ JeeF[yeQ[ SchueerheâeÙej kesâ ØeoMe&ve ceW cegKÙe differential output offset voltage is due to:
oes<e nw– FET Ùegice GheÙeesie keâjles ngS efJeYesoer ØeJeOe&keâ kesâ
(a) too low gain at low frequency mecyevOe ceW efvecve keâLeveeW hej efJeÛeej keâjW–
keâce DeeJe=efòe hej yengle keâce ueeYe efJeYesoer DeeGšhegš Dee@heâmesš Jeesušlee …….. kesâ keâejCe
(b) reduced gain at middle frequency neslee nw~
ceOÙece DeeJe=efòe hej keâce ueeYe 1. mismatch between FET parameters.
(c) poor phase response / Kejeye heâsspe jsmhee@vme FET hewjeceeršme& kesâ ceOÙe yescesue
(d) that the maximum gain of the stage is small 2. difference between the value of resistors used in
mšspe keâe DeefOekeâlece ueeYe keâce nw~ the circuit even though they are marked nominally
1599. Consider the following statements : equal.
Stagger tuning is used : heefjheLe ceW ØeÙegòeâ ØeeflejesOekeâeW kesâ ceeveeW kesâ ceOÙe Devlej Yeues ner
efvecve keâLeveeW hej efJeÛeej keâjW– Jes veececee$e kesâ ™he ceW efÛeefvnle neW~
mšwiej šŸetefvebie heÇÙegòeâ keâer peeleer nw– 3. variation in the operating voltage of the circuit.
1. to obtain sharp fall in the frequency response heefjheLe kesâ ØeÛeeueve Jeesušlee ceW heefjJele&ve
DeeJe=efòe Devegef›eâÙee ceW leer›e efiejJeeš ØeÇehle keâjves kesâ efueS~ Which of the above statements are correct?
2. to obtain a wider pass band Ghejesòeâ keâLeveeW ceW mes keâewve-mee mener nw?
ÛeewÌ[e heemeyewC[ heÇehle keâjves kesâ efueS~ (a) 1, 2 and 4 /1, 2 Deewj 4
3. in the IF amplifiers of radio receivers
jsef[Ùees efjmeerJejeW kesâ IF ØeJeOe&keâeW ceW~ (b) 2 and 3 only /kesâJeue 2 Deewj 3
Of these statements (c) 1 and 3 only /kesâJeue 1 Deewj 3
Fve keâLeveeW ceW– (d) 1 and 2 only /kesâJeue 1 Deewj 2
(a) 1 alone is correct /Dekesâuee 1 mener nw~ 1604. In a class-A amplifier, there will be a worst
(b) 1 and 3 are correct /1 Deewj 3 mener nw~ condition when:
(c) 2 alone is correct /Dekesâuee 2 mener nw
Skeâ Jeie&-A SchueerheâeÙej ceW, Skeâ meyemes Kejeye efmLeefle
(d) 1, 2 and 3 are correct /1, 2 Deewj 3 mener nw~ nes i eer
, peye–
1600. The bandwidth of an n-stage tuned amplifier (a) signal input is zero / efmeiveue Fvehegš MetvÙe nw~
with each stage having a bandwidth of B, is (b) signal input is maximum
given by : efmeiveue Fvehegš DeefOekeâlece nw~
n- ÛejCe šŸetv[ ØeJeOe&keâ efpemeceW ØelÙeskeâ ÛejCe ceW (c) load resistance is high/uees[ ØeeflejesOe GÛÛe nw~
yewC[efJe[dLe 'B' nw, keâer yewC[efJe[dLe ……….. kesâ Éeje (d) there is a transformer coupling
oer peeleer nw– Skeâ š^ebmeheâece&j Ùegiceve nw~
(a) B/n 1605. Which one of the following parameters is used
(b) B / n for distinguishing between a small signal and a
large –signal amplifier?
(c) B 21/ n − 1 efvecveefueefKele ceW mes keâewve-mee hewjeceeršj Skeâ Úesšs efmeiveue
(d) B / 21/ n − 1 Deewj Skeâ yeÌ[s efmeiveue kesâ yeerÛe efJeYeso keâjves kesâ efueS
1601. In a cascaded differential amplifier ØeÙeesie efkeâÙee peelee nw–
efkeâmeer keâemkesâ[s[ efJeYesoer ØeJeOe&keâ ceW– (a) Voltage gain / Jeesušspe ueeYe
(a) R-C coupling is used / R-C Ùegiceve ØeÙegòeâ efkeâÙee (b) Frequency response / DeeJe=eòf e Øeefleef›eâÙee
peelee nw~ (c) Harmonic distortion / neceexefvekeâ efJe™heCe
(b) direct coupling is used /ØelÙe#e Ùegiceve ØeÙegòeâ efkeâÙee (d) Input/output impedances
peelee nw~ Fvehegš/DeeGšhegš ØeefleyeeOee
(c) A.C. coupling is used/S.meer. Ùegiceve ØeÙegòeâ efkeâÙee 1606. Consider the following statements :
peelee nw~ efvecveefueefKele keâLeveeW hej efJeÛeej keâjW:
(d) D.C. or dc coupling may be used/S.meer. Ùee 1. Amplitude distortion arises due to different
[er.meer. Ùegiceve ØeÙegòeâ efkeâÙee pee mekeâlee nw~ frequency components being amplified differently
1602. A particular configuration of the inverting DeeÙeece efJe™heCe efJeefYeVe DeeJe=eòf e Jeeues IeškeâeW kesâ efJeefYeVe Øekeâej
amplifier circuit using negative feedback for mes ØeJeefOe&le nesves kesâ keâejCe GlheVe nesleer nw~
stabilizing its gain is called 2. White noise gives the same noise per unit
Deheves ueeYe keâes mLeeÙeerke=âle keâjves nsleg $e+Ceelcekeâ bandwidth across the entire frequency spectrum
heâer[yewkeâ keâe GheÙeesie keâjles ngS FveJeefšËie ØeJeOe&keâ JneFš vJee@Fpe, hetjs DeeJe=efòe mheskeäš^ce ceW Øeefle FkeâeF& yeQ[ efJe[dLe
heefjheLe keâe efJeMes<e efJevÙeeme ……………keânueelee nw– ceW vJee@Fpe Øeoeve keâjleer nw~
(a) feedback amplifier/heâer[yewkeâ ØeJeOe&keâ 3. If an amplifier has two poles such that p2 = 4p1,
(b) non-inverting amplifier/iewj-FvJeefšËie ØeJeOe&keâ then the dominant pole is p2 .
(c) inverting amplifier/FvJeefšËie ØeJeOe&keâ Ùeefo Skeâ ScheueerheâeÙej ceW oes OeÇJg e nw, pewmes efkeâ p2 = 4p1, leye
(d) differential amplifier/efJeYesoer ØeJeOe&keâ ØecegKe OeÇgJe p2 nw~
Electrical 50000 (MCQ) Volume II 698 YCT
4. The self-biasing emitter resistance of an 1611. In a feedback amplifier, the feedback improves
amplifier is by-passed by a large capacitance to the signal to noise ratio for noise signal
reduce degeneration at higher frequencies /Skeâ heâer[yewkeâ ØeJeOe&keâ ceW, heâer[yewkeâ Meesj mebkesâle kesâ
Skeâ ScheueerheâeÙej kesâ mesuheâ-yeeÙeefmebie Glmepe&keâ ØeeflejesOe keâes efueS mebkesâle-Meesj Devegheele ceW megOeej keâjlee nw–
GÛÛe DeeJe=efòe hej DeOe:heleve keâes keâce keâjves kesâ efueS Skeâ yeÌ[s (a) present with the amplifier
mebOeeefj$e Éeje yeeF&heeme efkeâÙee peelee nw~ ØeJeOe&keâ kesâ meeLe GheefmLele
Which of these statements are correct? (b) present at the output /DeeGš hej GheefmLele~
FveceW mes keâewve-mee keâLeve mener nw? (c) internally generated in the amplifier
(a) 1, 2, 3 and 4/1, 2, 3 Deewj 4 ScheueerheâeÙej ceW Deebleefjkeâ ™he mes GlheVe~
(b) 2 and 4 /2 Deewj 4 (d) both internally generated and present with the
(c) 2 and 3/2 Deewj 3 input /Deebleefjkeâ ™he mes GlheVe Deewj Fvehegš kesâ meeLe
(d) 3 and 4 /3 Deewj 4 GheefmLele oesveeW~
1607. In a transconductance amplifier, the device 1612. Negative feedback in an amplifier leads to
output which one of the following?
/Skeâ š^ebmekebâ[keäšsWme ScheueerheâeÙej ceW, Ùegefòeâ keâe Skeâ ScheueerheâeÙej ceW $e+Ceelcekeâ heâer[yewkeâ kesâ keâejCe
DeeGšhegš nesiee– efvecveefueefKele ceW mes keâewve mee neslee nw?
(a) voltage depends upon the input voltage (a) Decrease bandhwidth /yeQ[efJe[dLe ceW keâceer
Jeesušspe, Fvehegš Jeesušspe hej efveYe&j keâjlee nw~ (b) Increase in current gain /Oeeje ueeYe ceW Je=eæ
f
(b) voltage depends upon the input current (c) Increase in voltage gain /Jeesušspe ueeYe ceW Je=eæ
f
Jeesušspe, Fvehegš Oeeje hej efveYe&j keâjlee nw~ (d) Decrease in voltage gain /Jeesušspe ueeYe ceW keâceer
(c) current depends upon the input voltage 1613. A two stage amplifier with negative feedback
Oeeje, Fvehegš Jeesušspe hej efveYe&j keâjlee nw~ $e+Ceelcekeâ heâer[yewkeâ kesâ meeLe Skeâ oes ÛejCe
(d) current depends upon the input current SchueerheâeÙej–
Oeeje, Fvehegš Oeeje hej efveYe&j keâjlee nw~ (a) can become unstable for larger values of 'β'
1608. A good transconductance amplifier should 'β' kesâ yeÌ[s ceeveeW kesâ efueS DeefmLej nes mekeâlee nw~
have :
(b) becomes unstable at high and very low
Skeâ DeÛÚs š^ebmekebâ[keäšWme ScheueerheâeÙej ceW nesvee frequencies if 'A' is very large /Ùeefo 'A' yengle
ÛeeefnS– yeÌ[e nw, lees GÛÛe Deewj yengle keâce DeeJe=efòeÙeeW hej DeefmLej
(a) high input resistance and low output
resistance nes peelee nw~
GÛÛe Fvehegš ØeeflejesOe Deewj efvecve DeeGšhegš ØeeflejesOe~ (c) becomes unstable when the pole frequencies
become complex /DeefmLej nes peelee nw peye heesue
(b) low input resistance and high output
resistance DeeJe=efòeÙeeB peefšue nes peeleer nw~
efvecve Fvehegš ØeeflejesOe Deewj GÛÛe DeeGšhegš ØeeflejesOe~ (d) is always stable /ncesMee efmLej nesiee~
1614. The return difference of a feedback amplifier is
(c) high input and output resistances given by
GÛÛe Fvehegš Deewj DeeGšhegš ØeeflejesOe~ /Skeâ heâer[yewkeâ SchueerheâeÙej kesâ efjšve& Deblej Éeje efoÙee
(d) low input and output resistances peelee nw–
efvecve Fvehegš Deewj DeeGšhegš ØeeflejesOe~ (a) – Aβ
1609. For a transconductance amplifier, input and (b) + Aβ
output resistances are respectively : (c) 1 – Aβ
Skeâ š^ebmekebâ[keäšsWme ScheueerheâeÙej kesâ efueS, Fvehegš Deewj (d) 1 + Aβ
DeeGšhegš ØeeflejesOe ›eâceMe: nesles nQ– *1615. A feedback amplifier is designed with an
amplifier gain of – 1000 and feedback of β = –
(a) ∞ and 0 /∞ Deewj 0 0.1. If the amplifier had a gain change of 20%
(b) 0 and ∞ /0 Deewj ∞ due to temperature, the change in gain of the
(c) 0 and 0 /0 Deewj 0 feedback amplifier is :
Skeâ heâer[yewkeâ ØeJeOe&keâ keâes Skeâ ØeJeOe&keâ iesve kesâ –1000
(d) ∞ and ∞ /∞ Deewj ∞
Deewj β = –0.1 heâer[yewkeâ kesâ meeLe ef[peeFve efkeâÙee ieÙee
1610. The input resistance Ri and output resistance
R0 of an ideal current amplifier, in ohms are:
nw ~ Ùeefo leeheceeve kesâ keâejCe Fme ØeJeOe&keâ ceW 20% keâer
Skeâ DeeoMe& Oeeje ScheueerheâeÙej kesâ, Fvehegš ØeeflejesOe (Ri) ies ve ceW yeoueeJe neslee nw lees heâer[yewkeâ ØeJeOe&keâ kesâ iesve ceW
Deewj DeeGšhegš ØeeflejesOe (RO) kesâ ceeve, Deesce ceW nesles yeoueeJe nesiee–
(a) 10% (b) 5%
nQ– (c) 0.2% (d) 0.01%
(a) 0 and 0 /0 Deewj 0 *1616.An amplifier without feedback has a gain of
(b) 0 and ∞ /0 Deewj ∞ 1000. What is the gain with a negative feedback
of 0.009?
(c) ∞ and 0 /∞ Deewj 0 Skeâ SchueerheâeÙej keâe iesve efyevee heâer[yewkeâ kesâ 1000 nw,
(d) ∞ and ∞ /∞ Deewj ∞ $e+Ceelcekeâ heâer[yewkeâ 0.009 kesâ meeLe iesve keäÙee nw?
Electrical 50000 (MCQ) Volume II 699 YCT
(a) 900 (b) 125 Skeâ $e+Ceelcekeâ heâer[yewkeâ ØeJeOe&keâ kesâ meeLe Deesheve-uethe
(c) 100 (d) 10
− A0
*1617.The gain and distortion of an amplifier are iesve A0 > 0 Deewj heâer[yewkeâ hewâkeäšj β (> 0)
respectively 150 and 5%. When used with a ω
1+ j
10% negative feedback the % distortion would ω0
be: efkeâme DeeJe=efòe hej 3 dB keâšDee@heâ nesiee?
Skeâ ØeJeOe&keâ kesâ iesve Deewj efJe™heCe ›eâceMe: 150 Deewj (a) ω0A0β
5% nQ~ peye 10% $e+Ceelcekeâ heâer[yewkeâ kesâ meeLe ØeÙeesie (b) ω0 (1 + A0β)
nes leye % efJe™heCe nesiee– ω0
5 9 (c)
(a) (b) (1 + A0β)
16 16 (d) ω0 (1 − A0β)
(c) 6 (d) 8
1622. Consider the following with reference to a CE
*1618.An amplifier without feedback, when feed with transistor amplifier :
a 1V, 50 Hz input signal gives an output of 30V,
nd CE š^eefpemšj ØeJeOe&keâ kesâ meboYe& kesâ meeLe efvecveefueefKele
50 Hz with a 5% 2 order distortion. When
10% of the output is feedback what is the 2nd hej efJeÛeej keâjs–
order distortion? 1. The use of negative feedback.
Skeâ ØeJeOe&keâ efyevee heâer[yewkeâ kesâ, peye Fvehegš mebkesâle 1V, $e+Ceelcekeâ heâer[yewkeâ keâe GheÙeesie~
50Hz efoÙee peelee nw lees DeeGšhegš 30V, 50Hz 5%, 2. The conversion of DC power to AC
2nd Dee@[&j efJeke=âefle kesâ meeLe efceuelee nw, peye DeeGšhegš DC Meefòeâ keâe AC ceW ™heevlejCe~
keâe 10% Jeeheme efoÙee peelee nw lees 2 Dee@[&j efJeke=âefle
nd 3. High voltage and current gains
GÛÛe Jeesušspe Deewj Oeeje iesve~
keäÙee nesiee? 4. The use of step –up transformer
(a) 0.375 V (b) 1.3 V mšs he-Dehe š^ebmeheâece&j keâe GheÙeesie~
(c) 0.75 V (d) 3 V
The power gain is due to:
*1619.The open-loop voltage gain of an amplifier is hee@Jej iesve keâe keâejCe nw–
240. The noise level in the output without
(a) 1 and 2 /1 Deewj 2
feedback is 100 mV. If a negative feedback with
(b) 2 and 3 /2 Deewj 3
β = 1/60 is used, the noise level in the output
will be : (c) 1 and 3 /1 Deewj 3
Skeâ SchueerheâeÙej keâe Deesheve uethe Jeesušspe iesve 240 nw~ (d) 1 and 4 /1 Deewj 4
1623. Voltage series feedback (also called series –
efyevee heâer[yewkeâ kesâ DeeGšhegš ceW Meesj mlej 100mV nw, shunt feedback) results in :
Ùeefo β = 1/60 kesâ meeLe Skeâ $e+Ceelcekeâ heâer[yewkeâ keâe Jeesušspe ëe=bKeuee heâer[yewkeâ (efpemes ßesCeer Mevš heâer[yewkeâ
GheÙeesie efkeâÙee peelee nw, lees DeeGšhegš ceW Meesj keâe mlej keâne peelee nw)–
nesiee– (a) increases in both input and output impedances
(a) 1.66 mV (b) 2.4 mV Fvehegš Deewj DeeGšhegš ØeefleyeeOee o