Professional Documents
Culture Documents
Reliability_Report_2014-2016
Reliability_Report_2014-2016
RELIABILITY REPORT
2017
Power Semiconductor Devices
2
Summary of Tables 1A - 1H: HTRB
Table 2A Table 2B
MOSFET/IGBT MOSFET/IGBT
discrete device Module
Failure Rate [FIT] 125°C, 60% UCL 132 9304
Failure Rate [FIT] 90°C, 60% UCL 43 3001
Total Lots Tested 230 26
Total Devices Tested 7062 270
Total Actual 0 0
Failures 60% UCL {eq. (2)} 0,92 0,92
Total Equivalent Device Hours
@ 125°C {AF eq. (1)} 6979460 98878
MTTF 125°C 60% UCL 866 12
(Years) 90°C 60% UCL 2685 38
Table 7A
MOSFET/IGBT
discrete device
Total Lots Tested 178
Total Devices Tested 5972
Total Failures 0
Total Device Hours 573312