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Unit 11 -
Introductory Semiconductor Physics
Register for
Certification exam Assignment 10
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Course As per our records you have not submitted this Due on 2019-04-10, 23:59 IST.
outline
assignment.

How to access 1) The band gap of a semiconducting material is 1.18 eV and it has no impurities . If and 1 point
the portal the
effective masses of hole and electrons are taken to be the same as the free electron mass, the
Introduction to number density of electrons in the conduction band (or the number density of holes in the
Drude's free
electron theory valence band) of this material at 300K will be of the order of
of metals,
electrical
conductivity 1015 m−3
Ohm's law and
Hall effect
1019 m−3
Introduction to
Sommerfeld's
model 1023 m−3

Specific heat of
1029 m−3
an electron gas
and the No, the answer is incorrect.
behaviour of
Score: 0
thermal
conductivity of a Accepted Answers:
solid and 1015 m−3
relationship with
electrical 2) A highly pure germanium sample is at room temperature (300K). If the band gap of 1 point
conductivity germanium is 0.7eV, the temperature at which the conductivity of a sample of germanium is 25%
higher than that at the room temperature is close to
Introduction to
crystal structure
and their 405K
classifications 305K

Direct Imaging 325K

of Atomic 375K
Structure,

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Introduction to Solid State Physics - - Unit 11 - I... https://onlinecourses-archive.nptel.ac.in/noc19...

Crystals with this material willPowered

be at by
Monatomic about
Basis, Acoustic
modes
-11.3 meV

Two Atoms per -5.6 meV

Primitive Basis,
Quantization of -1.3 meV
Elastic Waves,
-0.7 meV
Phonon
Momentum No, the answer is incorrect.
Score: 0
Bloch's theorem
for wavefunction Accepted Answers:
of a particle in a -0.7 meV
periodic
potential, nearly 4) In a particular semiconductor, there are 1019 donors/m3 and conduction level is 1 1 point
free electron meV below the bottom of the conduction band. If the effective mass of electrons in conduction
model, origin of band is m∗e = 0.01me , the number density of conduction electrons at 2K will be of close to
energy band
gaps,
discussion of
Bloch 7.8 × 1015 m−3
wavefunction

Band theory of
2.8 × 1016 m−3
metals,
insulators and
5.0 × 1017 m−3
semiconductors,
Kronig-Penney
model, tight 1.2 × 1018 m−3
binding method
of calculating No, the answer is incorrect.
bands, and
Score: 0
semi-classical
dynamics of a Accepted Answers:
particle in a 1.2 × 1018 m−3
band
5) In the problem above, the Fermi level is about 1 point
Introductory
Semiconductor 0.88 meV above the donor leve
Physics
0.54 meV above the donor level
Concept of hole
as a current
0.35 meV above the donor level
carrier in 0.18 meV above the doneor level
semiconductors-
I No, the answer is incorrect.
Concept of hole Score: 0
as a current Accepted Answers:
carrier in
0.35 meV above the donor level
semiconductors-
II 6) A sample of silicon contains 10−4 atomic percent of phosphorus donors which are all 1 point
Calculating singly ionized at room temperature. If the mobility of electrons in silicon is 0.15m2 V −1 s−1 ,
carrier density the extrinsic resistivity of this material is (silicon atomic weight is 28 and its density is 2300kgm−3 )
in
semiconductors
-I
1.3 × 10−3 Ωm
Calculating
carrier density
in 8.4 × 10−4 Ωm
semiconductors
- II
5.5 × 10−4 Ωm
Donor and
acceptor
energy levels in 9.7 × 10−5 Ωm
a

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Introduction to Solid State Physics - - Unit 11 - I... https://onlinecourses-archive.nptel.ac.in/noc19...

semiconductor No, the answer is incorrect.

Score: 0
Charge carrier
density in Accepted Answers:
n-type and 8.4 × 10−4 Ωm
p-type
semiconductors 7) It may be generally expected that an intrinsic semiconductor will Hall 1 point
Electrical coefficient RH = 0 because of equal number of electrons and holes. However, difference in the
conductivity mobility of the carriers gives a non-zero Hall coefficient. If the number of electrons and holes is
and hall n and their mobility μe and μh , respectively then (keep in mind that the transverse field is such that
coefficient in the current in that direction vanishes)
semiconductors

Quiz :
1 μh −μe 3
Assignment 10
RH = ne ( μh +μe )
Introduction to
Solid State
1 μh −μe 2
Physics : RH = ne ( μh +μe )
Feedback For
Week 10
2 2
1 μh −μe
Magnetism in RH = ne (μ +μ )2
h e
materials
2 2
1 μh −μe
Superconductivity RH = (
ne μ +μ2e
2
)
h

Solutions of No, the answer is incorrect.

Assignments
Score: 0
Accepted Answers:
2 2
1 μh −μe
RH = ne (μ +μ )2
h e

8) For silicon semiconductor with band gap 1.12eV, position of the Fermi level at 1 point
300K,m∗e = 0.12m0 and m∗h = 0.28m0 is

0.57eV

1.14eV

2.5eV

0.27eV

No, the answer is incorrect.

Score: 0
Accepted Answers:
0.57eV

9) The electrical conductivity of intrinsic Silicon at 300K , having electron 1 point

mobility μe = 0.15m2 V −1 s−1 and hole mobility μe = 0.05m2 V −1 s−1 is close to

3.84Ω − m−1

38.4Ω − m−1

1.42Ω − m−1

14.2Ω − m−1
No, the answer is incorrect.
Score: 0
Accepted Answers:
3.84Ω − m−1

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