SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR BCP56

ISSUE 3 – AUGUST 1995✪

FEATURES
* Suitable for AF drivers and output stages
C
* High collector current and Low VCE(sat)

COMPLEMENTARY TYPE – BCP53

E
C
PARTMARKING DETAILS – BCP56
BCP56 – 10 B
BCP56 – 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
V
Collector-Base Voltage CBO 100 V
V
Collector-Emitter Voltage CEO 80 V
V
Emitter-Base Voltage EBO 5 V
I
Peak Pulse Current CM 1.5 A
Continuous Collector Current IC 1 A
P
Power Dissipation at Tamb =25°C tot 2 W
T :T
Operating and Storage Temperature j stg -55 to +150 °C
Range

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V
Collector-Base (BR)CBO 100 V IC=100mA
Breakdown Voltage
V
Collector-Emitter (BR)CEO 80 V IC= 10mA *
Breakdown Voltage
V
Emitter-Base (BR)EBO 5 V IE=10mA
Breakdown Voltage
I
Collector Cut-Off CBO 100 nA VCB=30V
Current 20 mA VCB=30V, Tamb=150°C
I
Emitter Cut-Off Current EBO 10 mA VEB=5V
V
Collector-Emitter CE(sat) 0.5 V IC=500mA, IB=50mA*
Saturation Voltage
V
Base-Emitter Turn-On BE(on) 1.0 V IC=500mA, VCE=2V*
Voltage
h
Static Forward Current FE 40 250 IC=150mA, VCE=2V*
Transfer Ratio 25 IC=500mA, VCE=2V*
BCP56-10 63 100 160 IC=150mA, VCE=2V*
 BCP56-16 100 160 250 IC=150mA, VCE=2V*
Transition Frequency fT 125 MHz IC=50mA, VCE=10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle £2%
3-18