TPC6003

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPC6003
Notebook PC Applications
Unit: mm
Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 7 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 30 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS ±20 V
DC
ID 6
(Note 1)
Drain current A
Pulse
IDP 24
(Note 1)
JEDEC ―
Drain power dissipation (t = 5 s)
PD 2.2 W
(Note 2a) JEITA ―
Drain power dissipation (t = 5 s)
PD 0.7 W TOSHIBA 2-3T1A
(Note 2b)
Single pulse avalanche energy (Note 3) EAS 5.8 mJ Weight: 0.011 g (typ.)

Avalanche current IAR 3 A

Repetitive avalanche energy (Note 4) EAR 0.22 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics Circuit Configuration

6 5 4
Characteristics Symbol Max Unit

Thermal resistance, channel to ambient

Rth (ch-a) 56.8 °C/W
(t = 5 s) (Note 2a)
Thermal resistance, channel to ambient
Rth (ch-a) 178.5 °C/W
(t = 5 s) (Note 2b)
1 2 3
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

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Marking (Note 5)

Lot code (month) Lot No.

Part No.
(or abbreviation code)
S2D
Product-specific code

Pin #1 Lot code A line indicates

(year) lead (Pb)-free package or
lead (Pb)-free finish.

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA

Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA
V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown voltage V
V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V
VGS = 4.5 V, ID = 3 A ⎯ 25 32
Drain-source ON resistance RDS (ON) mΩ
VGS = 10 V, ID = 3 A ⎯ 19 24
Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 3.5 7 ⎯ S
Input capacitance Ciss ⎯ 1250 ⎯
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 155 ⎯ pF

Output capacitance Coss ⎯ 170 ⎯

Rise time tr ⎯ 5 ⎯
ID = 3 A
VGS 10 V VOUT
Turn-ON time ton 0V ⎯ 11 ⎯
RL = 5 Ω

Switching time ns
4.7 Ω

Fall time tf ⎯ 9 ⎯

VDD ∼
− 15 V
Turn-OFF time toff ⎯ 63 ⎯
Duty <
= 1%, tw = 10 µs
Total gate charge
Qg ⎯ 25 ⎯
(gate-source plus gate-drain)
VDD ∼
− 24 V, VGS = 10 V, ID = 6 A nC
Gate-source charge Qgs ⎯ 20 ⎯
Gate-drain (“miller”) charge Qgd ⎯ 5 ⎯

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Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 24 A

Forward voltage (Diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.2 V

Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4 FR-4
2510 ms* 25.4 × 25.4 × 0.8
Unit: (mm)

(a) (b)

Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 3.0 A

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: • on lower left of the marking indicates Pin 1.
.

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 TPC6003

ID – VDS ID – VDS
5 10
4 6, 8, 10
10 6 3.2 3 2.8 2.7 2.8
2.6 3
8 4
4 8

(A)
(A)

2.7
2.5

ID
ID

3 6
2.6

Drain current
Drain current

2 4 2.5
VGS = 2.3 V

VGS = 2.4 V
1 2
Common source Common source
Ta = 25°C Ta = 25°C
Pulse test Pulse test
0 0
0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5

Drain-source voltage VDS (V) Drain-source voltage VDS (V)

ID – VGS VDS – VGS

12 0.6
Common source
Common source
Ta = 25°C
VDS = 10 V Pulse test
10 0.5
VDS (V)

Pulse test

8 0.4
Drain current

Drain-source voltage

6 0.3

25°C
4 0.2
ID = 6 A

2 100°C Ta = −55°C 0.1

3A
1.5 A
0 0
0 1 2 3 4 5 0 2 4 6 8 10

Gate-source voltage VGS (V) Gate-source voltage VGS (V)

|Yfs| – ID RDS (ON) – ID

100 100
(S)

50
|Yfs|

Drain-source on resistance

30 30 4.5 V
RDS (ON) (mΩ)
Forward transfer admittance

Ta = −55°C VGS = 10 V

10 10

25°C
5 100°C

3 3
Common source Common source
VDS = 10 V Ta = 25°C
Pulse test Pulse test
1 1
1 3 5 10 30 50 100 0.1 0.3 1 3 10 30 100

Dain current ID (A) Drain current ID (A)

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RDS (ON) – Ta IDR – VDS

50 100
Common source
Pulse test
30

(A)
40
Drain-source on resistance

ID = 6 A

IDR
10
RDS (ON) (mΩ)

ID = 1.5 A, 3 A
30

Drain reverse current

3
VGS = 4.5 V
20 ID = 1.5 A, 3 A, 6 A
1

VGS = 10 V
10
0.3 Common source
Ta = 25°C
Pulse test
0 0.1
−80 −40 0 40 80 120 160 0 −0.4 −0.8 −1.2 −1.6 −2.0

Ambient temperature Ta (°C) Drain-source voltage VDS (V)

Capacitance – VDS Vth – Ta

10000 3.5
Common source
VDS = 10 V
3.0
(V)

3000 ID = 1 mA
Pulse test
Vth
(pF)

2.5
1000 Ciss
Gate threshold voltage
C

2.0
Capacitance

300
1.5
Coss
100
Crss
1.0
Common source
30 VGS = 0 V
0.5
f = 1 MHz
Ta = 25°C
10 0
0.1 0.3 1 3 10 30 100 −80 −40 0 40 80 120 160

Drain-source voltage VDS Ambient temperature Ta (°C)

PD – Ta Dynamic input/output characteristics

2.5 50 25
(1) t = 5 s (1) Device mounted on a Common source
glass-epoxy board (a) ID = 6 A
(V)

(Note 2a)
(V)

2 40 Ta = 25°C 20
PD

(2) Device mounted on a Pulse test

VDS

VGS

glass-epoxy board (b)

Drain power dissipation

(Note 2b) 12 V
1.5 30 15
Drain-source voltage

Gate-source voltage

(1) DC VGS
VDD = 24 V 6V

1 20 VDD = 24 V 10
12 V
(2) t = 5 s
6V
0.5 10 5
(2) DC

0 0 0
0 40 80 120 160 0 8 16 24 32 40

Ambient temperature Ta (°C) Total gate charge Qg (nC)

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rth − tw
1000

300 Device mounted on a glass-

epoxy board (b) (Note 2b)
100

30
Device mounted on a glass-
Transient

epoxy board (a) (Note 2a)

10

0.3
Single pulse

0.1
0.001 0.01 0.1 1 10 100 1000

Pulse tw (s)

Safe operating area

100

30 ID max (pulsed)*

1 ms*
10

3 10 ms*
(A)

1
ID
Drain current

0.3

0.1

0.03

0.01
*: Single nonrepetitive pulse
Ta = 25°C
0.003 Curves must be derated VDSS max
linearly with increase in
temperature
0.001
0.01 0.03 0.1 0.3 1 3 10 30 100

Drain-source voltage VDS (V)

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RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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