Order this document

SEMICONDUCTOR TECHNICAL DATA by 2N4402/D

    

PNP Silicon
 
*Motorola Preferred Device

COLLECTOR
3

2
BASE

1
EMITTER 1
2
3
MAXIMUM RATINGS
Rating Symbol Value Unit CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Collector – Emitter Voltage VCEO 40 Vdc
Collector – Base Voltage VCBO 40 Vdc
Emitter – Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watt
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) V(BR)CEO 40 — Vdc
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO 40 — Vdc
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 5.0 — Vdc
(IE = 0.1 mAdc, IC = 0)

Base Cutoff Current IBEV — 0.1 µAdc

(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current ICEX — 0.1 µAdc
(VCE = 35 Vdc, VEB = 0.4 Vdc)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
 
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N4403 30 —

(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N4402 30 —

2N4403 60 —

(IC = 10 mAdc, VCE = 1.0 Vdc) 2N4402 50 —

2N4403 100 —

(IC = 150 mAdc, VCE = 2.0 Vdc)(1) 2N4402 50 150

2N4403 100 300

(IC = 500 mAdc, VCE = 2.0 Vdc)(1) Both 20 —

Collector – Emitter Saturation Voltage(1) VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) — 0.4
(IC = 500 mAdc, IB = 50 mAdc) — 0.75
Base – Emitter Saturation Voltage(1) VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.75 0.95
(IC = 500 mAdc, IB = 50 mAdc) — 1.3

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product fT MHz
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) 2N4402 150 —
2N4403 200 —
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccb — 8.5 pF
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb — 30 pF
Input Impedance hie ohms
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4402 750 7.5 k
2N4403 1.5 k 15 k
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10–4
Small–Signal Current Gain hfe —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4402 30 250
2N4403 60 500
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 100 µmhos

SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE = + 2.0 Vdc, td — 15 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr — 20 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts — 225 ns
Fall Time IB1 = 15 mA, IB2 = 15 mA) tf — 30 ns

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUIT

– 30 V – 30 V

200 Ω 200 Ω
< 2 ns < 20 ns
+2 V +14 V
0 0
1.0 kΩ 1.0 kΩ CS* < 10 pF
CS* < 10 pF
– 16 V –16 V
10 to 100 µs, 1.0 to 100 µs,
DUTY CYCLE = 2% DUTY CYCLE = 2% + 4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. Turn–On Time Figure 2. Turn–Off Time

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
TRANSIENT CHARACTERISTICS
25°C 100°C

30 10
7.0
VCC = 30 V
20 5.0
Ceb IC/IB = 10
3.0
CAPACITANCE (pF)

Q, CHARGE (nC)
2.0
10
1.0
7.0
0.7
Ccb
5.0 0.5
QT
0.3
QA
0.2

2.0 0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 500
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitances Figure 4. Charge Data

100 100
70 IC/IB = 10 70 VCC = 30 V
50 IC/IB = 10
50
tr @ VCC = 30 V
t r , RISE TIME (ns)

30 tr @ VCC = 10 V 30
t, TIME (ns)

td @ VBE(off) = 2 V
20 td @ VBE(off) = 0 20

10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time Figure 6. Rise Time

200

IC/IB = 10
t s′, STORAGE TIME (ns)

100
IC/IB = 20
70

50
IB1 = IB2
ts′ = ts – 1/8 tf
30

20
10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

 
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10 10
f = 1 kHz
8 8
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 1.0 mA, RS = 430 Ω
6 6 IC = 50 µA
IC = 500 µA, RS = 560 Ω
IC = 50 µA, RS = 2.7 kΩ 100 µA
IC = 100 µA, RS = 1.6 kΩ 500 µA
4 4
1.0 mA

2 RS = OPTIMUM SOURCE RESISTANCE 2

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)

Figure 8. Frequency Effects Figure 9. Source Resistance Effects

h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between selected from both the 2N4402 and 2N4403 lines, and the
hfe and other “h” parameters for this series of transistors. To same units were used to develop the correspondingly–
obtain these curves, a high–gain and a low–gain unit were numbered curves on each graph.
1000 100 k
700 50 k 2N4403 UNIT 1
2N4403 UNIT 2
hie , INPUT IMPEDANCE (OHMS)

500 2N4402 UNIT 1

20 k
2N4402 UNIT 2
hfe , CURRENT GAIN

300 10 k

200 5k

2N4403 UNIT 1 2k
100 2N4403 UNIT 2
1k
2N4402 UNIT 1
70 2N4402 UNIT 2 500
50
200
30 100
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 10. Current Gain Figure 11. Input Impedance

20 500
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )

hoe, OUTPUT ADMITTANCE (m mhos)

10 2N4403 UNIT 1
2N4403 UNIT 2
5.0 100
2N4402 UNIT 1
2N4402 UNIT 2 50
2.0
20
1.0
10
0.5 2N4403 UNIT 1
5.0 2N4403 UNIT 2
2N4402 UNIT 1
0.2 2.0 2N4402 UNIT 2

0.1 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
STATIC CHARACTERISTICS

3.0
VCE = 1.0 V
2.0 VCE = 10 V TJ = 125°C
h FE, NORMALIZED CURRENT GAIN

25°C

1.0
– 55°C
0.7

0.5

0.3

0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 14. DC Current Gain

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6
IC = 1.0 mA 10 mA 100 mA 500 mA

0.4

0.2

0
0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IB, BASE CURRENT (mA)

Figure 15. Collector Saturation Region

1.0 0.5
TJ = 25°C
0
0.8 VBE(sat) @ IC/IB = 10 qVC for VCE(sat)
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)

0.5
0.6 VBE(sat) @ VCE = 10 V
1.0
0.4
1.5

0.2
2.0 qVS for VBE
VCE(sat) @ IC/IB = 10
0 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 16. “On” Voltages Figure 17. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

 
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 1:
CASE 029–04 PIN 1. EMITTER
2. BASE
(TO–226AA) 3. COLLECTOR
ISSUE AD

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

6 Motorola Small–Signal Transistors, FETs and Diodes Device Data


◊ 2N4402/D