SUM110N06-05L

Vishay Siliconix

N-Channel 60-V (D-S) 175 °C MOSFET

PRODUCT SUMMARY FEATURES

V(BR)DSS (V) rDS(on) (Ω) ID (A) • TrenchFET® Power MOSFET
Available
0.0052 at VGS = 10 V • 175 °C Junction Temperature
60 110 a
• Low Thermal Resistance Package RoHS*
0.0072 at VGS = 4.5 V COMPLIANT

APPLICATIONS
• Industrial

TO-263 D

G D S
Top View
S
Ordering Information: SUM110N06-05L
SUM110N06-05L-E3 (Lead (Pb)-free) N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 110a
Continuous Drain Current (TJ = 175 °C) ID
TC = 125 °C 82a
A
Pulsed Drain Current IDM 300
Avalanche Current IAR 75
b L = 0.1 mH EAR 280 mJ
Repetitive Avalanche Energy
TC = 25 °C 230c
Maximum Power Dissipationb PD W
TA = 25 °Cd 3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mountd RthJA 40
°C/W
Junction-to-Case RthJC 0.65
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72006 www.vishay.com

S-80108-Rev. C, 21-Jan-08 1
SUM110N06-05L
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 60
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 µA
VDS = 60 V, VGS = 0 V, TJ = 175 °C 250
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0044 0.0052
VGS = 4.5 V, ID = 20 A 0.0059 0.0072
Drain-Source On-State Resistancea rDS(on) Ω
VGS = 10 V, ID = 30 A, TJ = 125 °C 0.0085
VGS = 10 V, ID = 30 A, TJ = 175 °C 0.011
a gfs VDS = 15 V, ID = 30 A 30 S
Forward Transconductance
Dynamicb
Input Capacitance Ciss 4300
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 770 pF
Reverse Transfer Capacitance Crss 365
Total Gate Chargec Qg 80 120
c Qgs VDS = 30 V, VGS = 10 V, ID = 110 A 19 nC
Gate-Source Charge
Gate-Drain Chargec Qgd 20
Turn-On Delay Timec td(on) 15 25
Rise Timec tr VDD = 30 V, RL = 0.27 Ω 20 30
ns
Turn-Off Delay Timec td(off) ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω 45 70
Fall Timec tf 15 25
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current IS 110
A
Pulsed Current ISM 300
Forward Voltagea VSD IF = 110 A, VGS = 0 V 1.1 1.5 V
Reverse Recovery Time trr 75 125 ns
Peak Reverse Recovery Current IRM(REC) IF = 110 A, di/dt = 100 A/µs 2.5 5 A
Reverse Recovery Charge Qrr 0.095 0.31 µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 72006

2 S-80108-Rev. C, 21-Jan-08
 SUM110N06-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

250 250

VGS = 10 thru 5 V
200 200

I D - Drain Current (A)

I D - Drain Current (A)

150 150

4V
100 100

TC = 125 °C

50 50
25 °C
3V - 55 °C

0 0
0 2 4 6 8 10 0 1 2 3 4 5 6

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

200 0.010

TC = - 55 °C

160 0.008
25 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)

VGS = 4.5 V
120 125 °C 0.006
VGS = 10 V

80 0.004

40 0.002

0 0.000
0 15 30 45 60 75 90 0 20 40 60 80 100 120

ID - Drain Current (A) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

6000 20

5000 VGS = 30 V
V GS - Gate-to-Source Voltage (V)

16 ID = 110 A
Ciss
C - Capacitance (pF)

4000
12

3000

8
2000
Coss
4
1000

Crss
0 0
0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

Document Number: 72006 www.vishay.com

S-80108-Rev. C, 21-Jan-08 3
SUM110N06-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.5 100
VGS = 10 V
ID = 110 A
2.0
r DS(on) - On-Resistance

I S - Source Current (A)

(Normalized)

1.5 TJ = 150 °C
TJ = 25 °C
10

1.0

0.5

0.0 1
- 50 - 25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2

TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

1000 80

ID = 10 mA

100 75
V(BR)DSS (V)
I Dav (a)

10 70
IAV (A) at TJ = 25 °C

65
1
IAV (A) at TJ = 150 °C

0.1 60
- 50 - 25 0 25 50 75 100 125 150 175
0.00001 0.0001 0.001 0.01 0.1 1
tin (s) TJ - Junction Temperature (°C)

Avalanche Current vs. Time Drain Source Breakdown

vs. Junction Temperature

www.vishay.com Document Number: 72006

4 S-80108-Rev. C, 21-Jan-08
 SUM110N06-05L
Vishay Siliconix
THERMAL RATINGS

120 1000
Limited by rDS(on)*
10 µs
100
100 100 µs

I D - Drain Current (A)

I D - Drain Current (A)

80

10 1 ms
60
10 ms
100 ms
40 DC
1
TC = 25 °C
20 Single Pulse

0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
TC - Ambient Temperature (°C) * VGS minimum VGS at which rDS(on) is specified
Maximum Drain Current Safe Operating Area
vs. Case Temperature

1
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1

0.1
0.05

0.02
Single Pulse

0.01
10- 4 10- 3 10- 2 10- 1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72006.

Document Number: 72006 www.vishay.com

S-80108-Rev. C, 21-Jan-08 5
 Package Information
www.vishay.com
Vishay Siliconix
TO-263 (D2PAK): 3-LEAD

-B-
A
E c2
6

D3
L2
E1

D2
-A- K

D4
E3

D1
D
L
L3

A A
b2 c
e b Detail “A” E2

0.010 M A M
2 PL

INCHES MILLIMETERS
°
-5

DIM. MIN. MAX. MIN. MAX.

L4
0°

A 0.160 0.190 4.064 4.826

b 0.020 0.039 0.508 0.990
L1
b1 0.020 0.035 0.508 0.889
b2 0.045 0.055 1.143 1.397
DETAIL A (ROTATED 90°)
Thin lead 0.013 0.018 0.330 0.457
c*
Thick lead 0.023 0.028 0.584 0.711
Thin lead 0.013 0.017 0.330 0.431
b c1
b1 Thick lead 0.023 0.027 0.584 0.685
M

c2 0.045 0.055 1.143 1.397

c1
c

D 0.340 0.380 8.636 9.652

SECTION A-A D1 0.220 0.240 5.588 6.096
D2 0.038 0.042 0.965 1.067
D3 0.045 0.055 1.143 1.397
D4 0.044 0.052 1.118 1.321
E 0.380 0.410 9.652 10.414
E1 0.245 - 6.223 -
E2 0.355 0.375 9.017 9.525
E3 0.072 0.078 1.829 1.981
e 0.100 BSC 2.54 BSC
K 0.045 0.055 1.143 1.397
Notes L 0.575 0.625 14.605 15.875
1. Plane B includes maximum features of heat sink tab and plastic. L1 0.090 0.110 2.286 2.794
2. No more than 25 % of L1 can fall above seating plane by L2 0.040 0.055 1.016 1.397
max. 8 mils.
L3 0.050 0.070 1.270 1.778
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB. L4 0.010 BSC 0.254 BSC
Thick lead is for SUM, SYM, SQM. M - 0.002 - 0.050
5. Use inches as the primary measurement. ECN: T13-0707-Rev. K, 30-Sep-13
6. This feature is for thick lead. DWG: 5843

Revison: 30-Sep-13 1 Document Number: 71198

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 AN826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420
(10.668)

(9.017)
0.355
(16.129)
0.635

0.145
(3.683)

0.135
(3.429)

0.200 0.050
(5.080) (1.257)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

Document Number: 73397 www.vishay.com

11-Apr-05 1
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Revision: 01-Jan-2019 1 Document Number: 91000