TGF3021-SM

®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Product Overview
The TGF3021-SM is a 30 W (P1dB) discrete GaN on SiC
HEMT which operates from 0.03 to 4.0 GHz. The device
is constructed with proven TQGaN25 processes, which
features advanced field plate techniques to optimize power
and efficiency at high drain bias operating conditions. This
optimization can potentially lower system costs in terms of
fewer amplifier line-ups and lower thermal management
costs.

The device is housed in an industry-standard 3 x 4 mm

surface mount QFN package.

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Functional Block Diagram
20 19 18 17
1 16
2 15
3 14
4 13
Key Features
• Frequency: 0.03 to 4.0 GHz
• Output Power (P1dB): 36.0 W at 2 GHz
• Linear Gain: 19.3 dB at 2 GHz
• Typical PAE1dB: 72.7% at 2 GHz
• Operating Voltage: 32 V
• Low thermal resistance package
• CW and Pulse capable
• 3 x 4 mm package

5 12

6 11

7 8 9 10

Applications
• Military radar
• Civilian radar
• Land mobile and military radio communications
Pad Configuration • Test instrumentation
• Wideband and narrowband amplifiers
Pad No. Symbol • Jammers
1-6 VG / RF IN
11 - 16 VD / RF OUT
7 – 10, 20 - 17 NC Ordering Information
Back side Source
Part Number Description
TGF3021-SM QFN Packaged Part
TGF3021-SM-EVB1 0.05 – 0.55 GHz EVB

Data Sheet Rev. D, April 2022 | Subject to change without notice 1 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Absolute Maximum Ratings Recommended Operating Conditions

Parameter Rating
Recommended
Parameter
OperatingValue
Conditions
Units
Drain to Gate Voltage (VDG) 100 V Drain Voltage Range (VD) 32 (Typ.) V
Gate Voltage Range (VG) −7 to 2 V Drain Quiescent Current (IDQ) 65 mA
Drain Current (ID) 5.8 A Peak Drain Current (ID) 1800 (Typ.) mA
Gate Current (IG) −7.5 to 16.8 mA Gate Voltage (VG) −2.7 (Typ.) V
CW RF Input Power (PIN) See page 9. Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
Storage Temperature −40 to 150°C conditions.
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.

Data Sheet Rev. D, April 2022 | Subject to change without notice 2 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Pulsed RF Characterization – Load Pull Performance

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 65 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle

Symbol Parameter Freq Min Typical Max Units

2.0 GHz 19.3

2.5 GHz 17.3

GLIN Linear Gain, Power Tuned dB
3.0 GHz 15.9

3.5 GHz 14.9

2.0 GHz 45.6

2.5 GHz 45.6

Output Power at 3 dB Gain Compression, Power
P3dB dBm
Tuned
3.0 GHz 45.4

3.5 GHz 45.4

2.0 GHz 72.7

Power-Added Efficiency at 3 dB Gain 2.5 GHz 64.4

PAE3dB %
Compression, Efficiency Tuned
3.0 GHz 62.9

3.5 GHz 61.5

2.0 GHz 16.3

2.5 GHz 14.3

G3dB Gain at 3 dB Compression, Power Tuned dB
3.0 GHz 12.9

3.5 GHz 11.9

Data Sheet Rev. D, April 2022 | Subject to change without notice 3 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

CW RF Characterization – Load Pull Performance

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 65 mA

Symbol Parameter Freq Min Typical Max Units

2.0 GHz 19.1

2.5 GHz 17.4

GLIN Linear Gain, Power Tuned dB
3.0 GHz 16.3

3.5 GHz 15.3

2.0 GHz 43.8

2.5 GHz 43.7

Output Power at 1 dB Gain Compression, Power
P1dB dBm
Tuned
3.0 GHz 43.6

3.5 GHz 43.4

2.0 GHz 70.6

Power-Added Efficiency at 1 dB Gain 2.5 GHz 63

PAE1dB %
Compression, Efficiency Tuned
3.0 GHz 62.3

3.5 GHz 62.5

2.0 GHz 18.1

2.5 GHz 16.4

G1dB Gain at 1 dB Compression, Power Tuned dB
3.0 GHz 15.3

3.5 GHz 14.3

Data Sheet Rev. D, April 2022 | Subject to change without notice 4 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

RF Characterization – 0.05 – 0.55 GHz EVB Performance at 0.25 GHz

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 65 mA, Signal: CW

Symbol Parameter Min Typical Max Units

GLIN Linear Gain 22.8 dB
P1dB Output Power at 1 dB Gain Compression 25.5 W
Power-Added Efficiency at 1 dB Gain
PAE1dB 63.6 %
Compression
G1dB Gain at 1 dB Compression 21.8 dB
Gate
VD = +10 V, VG = −3.7 V -8.3 mA
Leakage

RF Characterization – Mismatch Ruggedness at 512 MHz

Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 65 mA
Driving input power is determined at pulsed compression under matched condition at EVB output connector.

Symbol Parameter dB Compression Typical

VSWR Impedance Mismatch Ruggedness 1 10:1

Data Sheet Rev. D, April 2022 | Subject to change without notice 5 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Thermal and Reliability Information - CW (1)

Parameter Test Conditions Value Units
Thermal Resistance, Peak IR Surface
3.2 ºC/W
Temperature at Average Power (θJC) PDISS = 11.3 W, Tbaseplate = 85°C
Channel Temperature, TCH 121 °C
Thermal Resistance, Peak IR Surface
3.3 °C/W
Temperature at Average Power (θJC) PDISS = 15.1 W, Tbaseplate = 85°C
Channel Temperature, TCH 126 °C
Thermal Resistance, Peak IR Surface
3.3 ºC/W
Temperature at Average Power (θJC) PDISS = 18.9 W, Tbaseplate = 85°C
Channel Temperature, TCH 148 °C
Thermal Resistance, Peak IR Surface
3.4 ºC/W
Temperature at Average Power (θJC) PDISS = 22.7 W, Tbaseplate = 85°C
Channel Temperature, TCH 162 °C
Thermal Resistance, Peak IR Surface
3.6 ºC/W
Temperature at Average Power (θJC) PDISS = 30.2 W, Tbaseplate = 85°C
Channel Temperature, TCH 194 °C
Notes:
1. Thermal resistance measured to bottom of package.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Thermal and Reliability Information - Pulsed (1)

Parameter Test Conditions Value Units
Thermal Resistance, Peak IR Surface PDISS = 15.1 W, Tbaseplate = 85°C 2.0 ºC/W
Temperature at Average Power (θJC) Pulse Width = 100 uS
Channel Temperature, TCH Duty Cycle = 5% 115 °C
Thermal Resistance, Peak IR Surface PDISS = 22.7 W, Tbaseplate = 85°C 2.0 °C/W
Temperature at Average Power (θJC) Pulse Width = 100 uS
Channel Temperature, TCH Duty Cycle = 10% 131 °C
Thermal Resistance, Peak IR Surface PDISS = 30.2 W, Tbaseplate = 85°C 2.1 ºC/W
Temperature at Average Power (θJC) Pulse Width = 100 uS
Channel Temperature, TCH Duty Cycle = 20% 148 °C
Thermal Resistance, Peak IR Surface PDISS = 37.8 W, Tbaseplate = 85°C 2.1 ºC/W
Temperature at Average Power (θJC) Pulse Width = 100 uS
Channel Temperature, TCH Duty Cycle = 20% 166 °C
Notes:
1. Thermal resistance measured to bottom of package.
2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Data Sheet Rev. D, April 2022 | Subject to change without notice 6 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Maximum Channel Temperature

Peak IR Surface Temperature vs. Pulse Width

QFN Base Fixed at 85 °C, 20% Duty Cycle
240
Pdiss = 15.1 W
Peak IR Surface Temperature (°C)

230
220 Pdiss = 22.7 W
210 Pdiss = 30.2 W
200 Pdiss = 37.8 W
190
180
170
160
150
140
130
120
110
100
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse Width (S)

Peak IR Surface Temperature vs. CW Dissipation Power

QFN Base Fixed at 85 °C
240
230
Peak IR Surface Temperature (°C)

220
210
200
190
180
170
160
150
140
130
120
110
CW
100
90
2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 32.5 35.0 37.5 40.0
CW Dissipation Power (W)

Data Sheet Rev. D, April 2022 | Subject to change without notice 7 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Maximum Channel Temperature

Maximum IR Surface Temperature

QFN base fixed at 85oC, Pdiss = 30W
200
Maximum Channel Temperature (oC)

190

180

170

160

150

140
20% D.C. 5% Duty Cycle
130
@ 100us 10% Duty Cycle
120 20% Duty Cycle
110 50% Duty Cycle

100
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02
Pulse Width (sec)

Data Sheet Rev. D, April 2022 | Subject to change without notice 8 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Maximum Input Power (1)

Max Input Power

35

33

31

29
Pin (dBm)

27

25

23

21

19

17
0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)

(1)
Values are estimated at 25 °C and CW condition.

Data Sheet Rev. D, April 2022 | Subject to change without notice 9 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – Pulsed (1,2,3)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. 32 V, 65 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain.
2. See page 30 for load pull and source pull reference planes.
3. NaN means the impedances are undefined in load-pull system.

1.5GHz, Load-pull
0.5

Zs(fo) = 3.14+3.15i  • Max Power is 45.5dBm

Zs(2fo) = NaN at Z = 5.624+1.216i 
Zs(3fo) = NaN  = -0.5575+0.0739i
0.
4 = NaN
Zl(2fo) • Max Gain is 20.9dB
Zl(3fo) = NaN at Z = 3.576+9.889i 
 = -0.4428+0.6052i
• Max PAE is 75.5%
at Z = 6.176+11.195i 
 = -0.2918+0.5525i

20.5
74.3

72.3
20
70.3

19.5

45.4
45.2
45
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

1.4

1.6
1

52.3

Power
Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 10 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – Pulsed (1,2,3)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. 32 V, 65 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain.
2. See page 28 for load pull and source pull reference planes.
3. NaN means the impedances are undefined in load-pull system.

2GHz, Load-pull
0.5

Zs(fo) = 3.12+0.94i  • Max Power is 45.6dBm

Zs(2fo) = NaN at Z = 3.721+1.52i 
Zs(3fo) = NaN  = -0.6794+0.1076i
0.
4 = NaN
Zl(2fo) • Max Gain is 17.1dB
Zl(3fo) = NaN at Z = 3.032+4.765i 
 = -0.6654+0.3446i
• Max PAE is 72.7%
at Z = 3.097+5.725i 
 = -0.6316+0.4044i

71.2

69.2
67.2

16.8

16.3
57.2
15.8
45.5
45.3
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

1.4

1.6

45.1
1

Power
Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 11 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – Pulsed (1,2,3)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. 32 V, 65 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain.
2. See page 28 for load pull and source pull reference planes.
3. NaN means the impedances are undefined in load-pull system.

2.5GHz, Load-pull
Zs(fo) = 2.99-0.24i  • Max Power is 45.6dBm
Zs(2fo) = NaN at Z = 3.696-0.178i 
0.
4
Zs(3fo) = NaN  = -0.688-0.0127i
Zl(2fo) = NaN • Max Gain is 15.1dB
Zl(3fo) = NaN at Z = 3.787+2.889i 
 = -0.6571+0.2013i
• Max PAE is 64.4%
at Z = 2.97+3.915i 
 = -0.6922+0.2884i

63.1
61.1
59.1
14.9

14.4
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

1.4

1.6

1.8

49.1
1

13.9 45.4
45.2
45

Power
Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 12 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – Pulsed (1,2,3)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. 32 V, 65 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain.
2. See page 28 for load pull and source pull reference planes.
3. NaN means the impedances are undefined in load-pull system.

3GHz, Load-pull
Zs(fo) = 3.03-1.24i  • Max Power is 45.4dBm
Zs(2fo) = NaN at Z = 4.61+0.109i 
0.
4
Zs(3fo) = NaN  = -0.6253+0.0072i
Zl(2fo) = NaN • Max Gain is 13.9dB
Zl(3fo) = NaN at Z = 4.859+4.438i 
 = -0.5594+0.2784i
• Max PAE is 62.9%
at Z = 3.029+4.872i 
 = -0.6625+0.3517i

62.3

60.3
58.3
13.5

13

48.3
12.5
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

1.4

1.6

1.8
1

45.3
45.1
44.9

Power
Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 13 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – Pulsed (1,2,3)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. 32 V, 65 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain.
2. See page 28 for load pull and source pull reference planes.
3. NaN means the impedances are undefined in load-pull system.

3.5GHz, Load-pull
• Max Power is 45.4dBm
0. = 3.17-2.92i 
Zs(fo)
4
Zs(2fo) = NaN at Z = 4.619+0.365i 
Zs(3fo) = NaN  = -0.6244+0.0241i
Zl(2fo) = NaN • Max Gain is 12.8dB
Zl(3fo) = NaN at Z = 3.857+4.089i 
 = -0.6288+0.2792i
• Max PAE is 61.5%
at Z = 2.962+3.953i 
 = -0.6919+0.2913i

61.5

59.5
57.5
12.4

11.9
49.5

11.4
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

1.4

1.6

1.8
1

45.3

45.1
44.9

Power
Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 14 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – Pulsed (1,2,3)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. 32 V, 65 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain.
2. See page 28 for load pull and source pull reference planes.
3. NaN means the impedances are undefined in load-pull system.

4GHz, Load-pull
• Max Power is 44.4dBm
0. = 3.35-4.97i 
Zs(fo)
4
Zs(2fo) = NaN at Z = 3.714-1.011i 
Zs(3fo) = NaN  = -0.6837-0.0718i
Zl(2fo) = NaN • Max Gain is 9.6dB
Zl(3fo) = NaN at Z = 4.636+1.416i 
 = -0.6183+0.093i
• Max PAE is 42.4%
at Z = 3.706+0.985i 
 = -0.6844+0.07i

40.5 38.5
36.5
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

1.4

1.6

1.8
1

9.32

44.4
8.82
44.2
8.32
44

Power
Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 15 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – CW (4, 5, 6)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
4. 32 V, 65 mA., CW, 1 dB compression referenced to peak gain.
5. See page 28 for load pull and source pull reference planes.
6. NaN means the impedances are undefined in load-pull system.

2GHz, Load-pull

Zs(fo) = 2.99+0.73i  • Max Power is 43.8dBm

Zs(2fo)
0. = NaN at Z = 4.106+2.017i 
4
Zs(3fo) = NaN  = -0.6478+0.1379i
Zl(2fo) = NaN • Max Gain is 18.8dB
Zl(3fo) = NaN at Z = 3.015+4.638i 
 = -0.6702+0.3366i
• Max PAE is 70.6%
at Z = 3.228+7.106i 
 = -0.5747+0.4817i

70.5

68.5

66.5

18.6

54.5
18.1
43.7
43.5 43.3

17.6
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2
1

Power
Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 16 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – CW (4, 5, 6)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
4. 32 V, 65 mA., CW, 1 dB compression referenced to peak gain.
5. See page 28 for load pull and source pull reference planes.
6. NaN means the impedances are undefined in load-pull system.

2.5GHz, Load-pull
0.
4

Zs(fo) = 3.07-0.5i  • Max Power is 43.7dBm

Zs(2fo) = NaN at Z = 4.101+1.959i 
Zs(3fo) = NaN  = -0.6488+0.134i
Zl(2fo) = NaN • Max Gain is 16.6dB
Zl(3fo) = NaN at Z = 4.215+3.811i 
 = -0.6119+0.2537i
• Max PAE is 63%
at Z = 3.017+4.717i 
 = -0.6678+0.3418i

62.4

60.4

58.4

56.4
43.7
16.3
43.5
43.3
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2
1

15.8

Power
15.3 Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 17 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – CW (4, 5, 6)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
4. 32 V, 65 mA., CW, 1 dB compression referenced to peak gain.
5. See page 28 for load pull and source pull reference planes.
6. NaN means the impedances are undefined in load-pull system.

3GHz, Load-pull
0.
4

Zs(fo) = 3.04-1.65i  • Max Power is 43.6dBm

Zs(2fo) = NaN at Z = 4.102+1.957i 
Zs(3fo) = NaN  = -0.6487+0.1339i
Zl(2fo) = NaN • Max Gain is 15.7dB
Zl(3fo) = NaN at Z = 4.401+5.713i 
 = -0.5541+0.3639i
• Max PAE is 62.3%
at Z = 3.017+4.719i 
 = -0.6677+0.3419i

62

60
58

15.4
52

14.9
43.4
43.2
43
14.4
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2
1

Power
Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 18 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Model Load Pull Contours – CW (4, 5, 6)

RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
4. 32 V, 65 mA., CW, 1 dB compression referenced to peak gain.
5. See page 28 for load pull and source pull reference planes.
6. NaN means the impedances are undefined in load-pull system.

3.5GHz, Load-pull
0.
4

Zs(fo) = 3.13-2.85i  • Max Power is 43.4dBm

Zs(2fo) = NaN at Z = 4.095+1.949i 
Zs(3fo) = NaN  = -0.6493+0.1334i
Zl(2fo) = NaN • Max Gain is 14.8dB
Zl(3fo) = NaN at Z = 3.019+4.723i 
 = -0.6675+0.3421i
• Max PAE is 62.5%
at Z = 3.019+4.723i 
 = -0.6675+0.3421i

59.8
57.8
55.8
14.3
51.8
43.3
13.8
43.1
42.9

13.3
0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2
1

Power
Gain
PAE
Zo = 20

Data Sheet Rev. D, April 2022 | Subject to change without notice 19 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Typical Pulsed Performance – Power Tuned (1,2)

Notes:
1. Pulsed signal with 100 uS pulse width and 20% duty cycle
2. See page 28 for load pull and source pull reference planes where the performance was measured.

TGF3021-SM Gain and PAE vs. Output Power TGF3021-SM Gain and PAE vs. Output Power
1.5GHz, Vds =32V, Idq =65mA, 100uS, 10%, Power Tuned 2GHz, Vds =32V, Idq =65mA, 100uS, 10%, Power Tuned
25 55 22 60
24 50 21 54
23 45 20 48
22 40 19 42
21 35 18 36
Gain [dB]

Gain [dB]
PAE [%]

PAE [%]
20 30 17 Zs = 3.12+0.94i 30
Zs = 3.14+3.15i
Zl = 5.62+1.22i 16 Zl = 3.72+1.52i 24
19 25
Gain
18 PAE 20 15 Gain 18
17 15 14 PAE 12
16 10 13 6
15 5 12 0
24 26 28 30 32 34 36 38 40 42 44 46 22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power [dBm] Output Power [dBm]

TGF3021-SM Gain and PAE vs. Output Power TGF3021-SM Gain and PAE vs. Output Power
2.5GHz, Vds =32V, Idq =65mA, Power Tuned 3GHz, Vds =32V, Idq =65mA, Power Tuned
20 55 20 50
19 50 19 45
18 45 18 40
17 40 17 35
16 35
Gain [dB]

16 30
Gain [dB]
PAE [%]

PAE [%]
15 Zs = 2.99-0.24i 30 15 25
Zl = 3.7-0.18i
14 25 14 Zs = 3.03-1.24i 20
Zl = 4.61+0.11i
13 Gain 20 13 Gain 15
12 PAE 15 12 PAE 10
11 10 11 5
10 5 10 0
24 26 28 30 32 34 36 38 40 42 44 46 24 26 28 30 32 34 36 38 40 42 44 46
Output Power [dBm] Output Power [dBm]

TGF3021-SM Gain and PAE vs. Output Power TGF3021-SM Gain and PAE vs. Output Power
3.5GHz, Vds =32V, Idq =65mA, Power Tuned 4GHz, Vds =32V, Idq =65mA, Power Tuned
20 55 15 50
19 50 14 45
18 45 13 40
17 Zs = 3.17-2.92i 40 12 35
Zl = 4.62+0.37i
16 35
Gain [dB]

11 30
PAE [%]

Gain [dB]

PAE [%]

15 30 10 Zs = 3.35-4.97i 25
Zl = 3.71-1.01i
14 25 9 20
13 20 8 15
Gain Gain
12 PAE 15 7 10
PAE
11 10 6 5
10 5 5 0
24 26 28 30 32 34 36 38 40 42 44 46 24 26 28 30 32 34 36 38 40 42 44 46
Output Power [dBm] Output Power [dBm]

Data Sheet Rev. D, April 2022 | Subject to change without notice 20 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Typical Pulsed Performance – Efficiency Tuned (1,2)

Notes:
1. Pulsed signal with 100 uS pulse width and 20% duty cycle
2. See page 28 for load pull and source pull reference planes where the performance was measured.

TGF3021-SM Gain and PAE vs. Output Power TGF3021-SM Gain and PAE vs. Output Power
1.5GHz, Vds =32V, Idq =65mA, Efficiency Tuned 2GHz, Vds =32V, Idq =65mA, Efficiency Tuned
25 100 22 100
24 90 21 90
23 80 20 80
22 70 19 70
21 60 18 60

Gain [dB]
Gain [dB]

PAE [%]
PAE [%]
20 Zs = 3.14+3.15i 50 17 Zs = 3.12+0.94i 50
19 Zl = 6.18+11.2i 40 16 Zl = 3.1+5.73i 40
18 30 15 30
Gain Gain
17 PAE 20 14 PAE 20
16 10 13 10
15 0 12 0
24 26 28 30 32 34 36 38 40 42 44 24 26 28 30 32 34 36 38 40 42 44
Output Power [dBm] Output Power [dBm]

TGF3021-SM Gain and PAE vs. Output Power TGF3021-SM Gain and PAE vs. Output Power
2.5GHz, Vds =32V, Idq =65mA, Efficiency Tuned 3GHz, Vds =32V, Idq =65mA, Efficiency Tuned
20 100 20 100
19 90 19 90
18 80 18 80
17 70 17 70
16 60
Gain [dB]

16 60
PAE [%]

Gain [dB]

PAE [%]
15 Zs = 2.99-0.24i 50
Zl = 2.97+3.92i 15 Zs = 3.03-1.24i 50
14 40 Zl = 3.03+4.87i
14 40
13 30 13 30
Gain Gain
12 20 12 20
PAE PAE
11 10 11 10
10 0 10 0
24 26 28 30 32 34 36 38 40 42 44 24 26 28 30 32 34 36 38 40 42 44
Output Power [dBm] Output Power [dBm]

TGF3021-SM Gain and PAE vs. Output Power

3.5GHz, Vds =32V, Idq =65mA, Efficiency Tuned TGF3021-SM Gain and PAE vs. Output Power
20 100 4GHz, Vds =32V, Idq =65mA, Efficiency Tuned
15 50
19 90
14 45
18 80
13 40
17 70
12 35
16 60
Gain [dB]

PAE [%]

11 30
Gain [dB]

PAE [%]

15 50 Zs = 3.35-4.97i
10 25
14 40 Zl = 3.71+0.99i
Zs = 3.17-2.92i 9 20
13 Zl = 2.96+3.95i 30
8 15
12 Gain 20 Gain
PAE 7 PAE 10
11 10
6 5
10 0
24 26 28 30 32 34 36 38 40 42 44 5 0
Output Power [dBm] 24 26 28 30 32 34 36 38 40 42 44
Output Power [dBm]

Data Sheet Rev. D, April 2022 | Subject to change without notice 21 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Typical CW Performance – Power Tuned (1, 2)

Notes:
1. CW signal
2. See page 28 for load pull and source pull reference planes where the performance was measured.

TGF3021-SM Gain and PAE vs. Output Power TGF3021-SM Gain and PAE vs. Output Power
2GHz, Vds =32V, Idq =65mA, Power Tuned 2.5GHz, Vds =32V, Idq =65mA, Power Tuned
21 60 19 60
20.5 54 18.5 54
20 48 18 48
19.5 42 17.5 42
19 36
Gain [dB]

17 36

PAE [%]

Gain [dB]

PAE [%]
18.5 30 16.5 30
Zs = 3.07-0.5i
18 Zs = 2.99+0.73i 24 16 Zl = 4.1+1.96i 24
Zl = 4.11+2.02i
17.5 Gain 18 15.5 18
Gain
17 PAE 12 15 12
PAE
16.5 6 14.5 6
16 0 14 0
23 25 27 29 31 33 35 37 39 41 43 45 23 25 27 29 31 33 35 37 39 41 43 45
Output Power [dBm] Output Power [dBm]

TGF3021-SM Gain and PAE vs. Output Power TGF3021-SM Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =65mA, Power Tuned 3.5GHz, Vds =32V, Idq =65mA, Power Tuned
18 60 17 60
17.5 54 16.5 54
17 48 16 48
16.5 42 15.5 42
16 36 15 36
Gain [dB]
Gain [dB]

PAE [%]
PAE [%]

15.5 Zs = 3.04-1.65i 30 14.5 30

Zl = 4.1+1.96i Zs = 3.13-2.85i
15 24 14 Zl = 4.1+1.95i 24
14.5 Gain 18 13.5 18
Gain
14 PAE 12 13 12
PAE
13.5 6 12.5 6
13 0 12 0
23 25 27 29 31 33 35 37 39 41 43 45 23 25 27 29 31 33 35 37 39 41 43 45
Output Power [dBm] Output Power [dBm]

Data Sheet Rev. D, April 2022 | Subject to change without notice 22 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Typical CW Performance – Efficiency Tuned (1, 2)

Notes:
1. CW signal
2. See page 28 for load pull and source pull reference planes where the performance was measured.

TGF3021-SM Gain and PAE vs. Output Power TGF3021-SM Gain and PAE vs. Output Power
2GHz, Vds =32V, Idq =65mA, Efficiency Tuned 2.5GHz, Vds =32V, Idq =65mA, Efficiency Tuned
21 100 19 100
20.5 90 18.5 90
20 80 18 80
19.5 70 17.5 70
19 60
Gain [dB]

17 60

Gain [dB]
PAE [%]

PAE [%]
18.5 50 16.5 50
Zs = 2.99+0.73i Zs = 3.07-0.5i
18 Zl = 3.23+7.11i 40 16 Zl = 3.02+4.72i 40
17.5 30 15.5 30
Gain
Gain
17 20 15 PAE 20
PAE
16.5 10 14.5 10
16 0 14 0
23 25 27 29 31 33 35 37 39 41 43 23 25 27 29 31 33 35 37 39 41 43
Output Power [dBm] Output Power [dBm]

TGF3021-SM Gain and PAE vs. Output Power TGF3021-SM Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =65mA, Efficiency Tuned 3.5GHz, Vds =32V, Idq =65mA, Efficiency Tuned
19 100 18 100
18.5 90 17.5 90
18 80 17 80
17.5 70 16.5 70
17 60
Gain [dB]

16 60
Gain [dB]
PAE [%]

PAE [%]
16.5 50 15.5 50
16 40 15 40
Zs = 3.04-1.65i Zs = 3.13-2.85i
15.5 Zl = 3.02+4.72i 30 14.5 Zl = 3.02+4.72i 30
Gain
15 Gain 20 14 20
PAE
PAE
14.5 10 13.5 10
14 0 13 0
23 25 27 29 31 33 35 37 39 41 43 23 25 27 29 31 33 35 37 39 41 43
Output Power [dBm] Output Power [dBm]

Data Sheet Rev. D, April 2022 | Subject to change without notice 23 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

0.05 – 0.55 GHz EVB Performance Over Temperature (1, 2, 3)

Notes:
1. 1. Performance measured on Qorvo’s 0.05 – 0.55 GHz Evaluation Board
2. Test Conditions: VDS = 32 V, IDQ = 65 mA
3. Test Signal: CW

Data Sheet Rev. D, April 2022 | Subject to change without notice 24 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

0.05 – 0.55 GHz EVB Performance At 25°C (1, 2, 3)

Notes:
1. Performance measured on Qorvo’s 0.05 – 0.55 GHz Evaluation Board
2. Test Conditions: VDS = 32 V, IDQ = 65 mA
3. Test Signal: CW

Data Sheet Rev. D, April 2022 | Subject to change without notice 25 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

0.05 – 0.55 GHz EVB Performance - Two-Tone Measurements (1)

(1)Intermodulation Modulation Distortion products (IMD) are referenced to Output Peak Envelope Power (PEP), which is 6 dB above
single-tone output power. Center frequency = 50 MHz, 245.5 MHz, 495.5 MHz, Tone Separation = 1 MHz, Temp = 25 °C.

Data Sheet Rev. D, April 2022 | Subject to change without notice 26 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

0.05 – 0.55 GHz EVB Schematic

Bias-up Procedure Bias-down Procedure

1. VG set to -5 V. 1. Turn off RF signal.
2. VD set to 32 V. 2. Turn off VD and wait 1 second to allow drain
3. Adjust VG more positive until quiescent ID is 65 mA. capacitor dissipation.
4. Apply RF signal. 3. Turn off VG.

Data Sheet Rev. D, April 2022 | Subject to change without notice 27 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

0.05 – 0.55 GHz EVB Layout

Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized
assembly at Qorvo Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.

0.05 – 0.55 GHz EVB Bill of Materials

Reference Design Value Qty Manufacturer Part Number
R1, R3 430 Ω 2 Any Generic 0603
R2 11 Ω 1 Any Generic 0603
R4 24 Ω 1 Any Generic 0603
R5 10 Ω 1 Any Generic 0603
C1 15 pF 1 ATC 600S150AT250XT
C2, C3 820 pF 2 ATC 700A821JW050XT
C4 1.5 pF 1 ATC 600S1R5AT250XT
C5 10 uF 1 Murata GRM188R60J6ME47D
C6, C9 82 pF 1 ATC 600S820FT250XT
C7 10 uF 1 TDK C5750X7R1H106K320KB
C8 220 uF 1 United Chemi-Con EMVE500ADA221MJA0G
L1 10 nH 1 Coilcraft 0603HC-10NXJE
L2 6.8 nH 1 Coilcraft 0603HC-6N8XJE
L3 1000 nH 1 Coilcraft 0603LS-102XJ
L4 1100 nH 1 Coilcraft 1008AF-112XJ
T1 Transformer 1 Anaren XT0010E15012S

Data Sheet Rev. D, April 2022 | Subject to change without notice 28 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Pin Layout

Pin Description
Pin Symbol Description
Gate voltage / RF Input to be matched to 50 ohms; see EVB Layout on page 27 as an
1-6 VG / RF IN
example.
Drain voltage / RF Output to be matched to 50 ohms; see EVB Layout on page 27 as an
11 - 16 VD / RF OUT
example.

7 – 10, 17 - 20 NC Not connected

Back side Source Source connected to ground

Notes:
Thermal resistance measured to back side of package
The TGF3021-SM will be marked with the “3021” designator and a lot code marked below the part designator The “YY” represents
the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, and the
“MXXX” is the production lot number.

Data Sheet Rev. D, April 2022 | Subject to change without notice 29 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Mechanical Information
All dimensions are in millimeters.

Note:
Unless otherwise noted, all dimension tolerances are +/-0.127 mm.
This package is lead-free/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.

Data Sheet Rev. D, April 2022 | Subject to change without notice 30 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Recommended Soldering Temperature Profile

Data Sheet Rev. D, April 2022 | Subject to change without notice 31 of 32 www.qorvo.com
 TGF3021-SM
®
30 W, 32 V, 0.03 to 4 GHz, GaN RF Transistor

Handling Precautions
Parameter Rating Standard
ESD – Human Body Model (HBM) Class 1B (600V) JEDEC Standard JESD22-A114
ESD – Charged Device Model (CDM) Class C3 (1000V) ANSI/ESDA/JEDEC Standard JS-002
MSL – Moisture Sensitivity Level MSL3 IPC/JEDEC Standard J-STD-020 Caution!
ESD-Sensitive Device

Solderability
Compatible with the latest version of J-STD-020, Lead free solder, 260 °C

RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.

This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
Pb
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com Tel: 1-844-890-8163
Email: customer.support@qorvo.com

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2022 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

Data Sheet Rev. D, April 2022 | Subject to change without notice 32 of 32 www.qorvo.com
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