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azom.com-Emerging Trends in Semiconductor Technology
azom.com-Emerging Trends in Semiconductor Technology
azom.com-Emerging Trends in Semiconductor Technology
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Understanding Semiconductors
Semiconductors or integrated circuits are microelectronic devices made mostly of silicon
or germanium. These chips, though tiny, comprise thousands of different components that
work together to process information. The electrical conductivity of semiconductors can
be altered by adding specific impurities or changing their temperature.3
Among the different types of semiconductor devices, logic chips, analog chips, memory
chips, and optoelectronics dominate the market. The p-n junction, the primary type of
semiconductor device, consists of N-type and P-type semiconductors forming a diode.
An imbalance is created, with one side being more positive. Electrons cross the junction
toward the positive side, creating a central neutral part called the depletion junction.4
This region is vital as it directly affects electron movement. When an electric voltage is
applied across a semiconductor device, the depletion region shrinks, allowing electrons to
move in a specific direction.
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Advancements in Materials
For More:
Advanced Packaging Materials for Semiconductor Chips
A recent study used Density Functional Theory (DFT) to explore the structural stability
and electronic and optical properties of GaC, seeking novel third-generation
semiconductors.
The study revealed that GaC, similar to gallium nitride (GaN), exists in three phases: two
cubic phases and one hexagonal molecular configuration.5 The band gaps of these
phases were found to be 0.449 eV, 2.733 eV, and 3.340 eV, respectively. Notably, the
band gap of the cubic phase F4̅3m GaC and hexagonal GaC is larger than that of GaN.
Additionally, all three phases of GaC exhibited ultraviolet properties, and their first peak
showed better migration compared to GaN. Thus, GaC shows potential as a third-
generation semiconductor material for future industries.
The digital era revolution has been significantly influenced by advancements in inorganic
semiconductors.
Recently, there has been a surge in interest in atomically thin 2D inorganic materials,
particularly due to the global growth in graphene research. These materials have
garnered significant attention for their potential applications in ultrathin, transparent, and
flexible nanodevices.
A new method called the mixture precursor hot-injection colloidal route has been
proposed to prepare Silver-Based Chalcogenide Semiconductor quantum dots. This
method maintains a stable response even after multiple optical switching cycles, with a
rise time of 2.11 seconds and a fall time of 1.04 seconds, indicating excellent
optoelectronic performance.6
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To demonstrate their feasibility for real-life applications, the team created smart wearable
electronics, including a beanie, sweater, and watch capable of detecting and processing
signals. To broaden their applications, they plan to explore different materials for the
fibers and develop semiconductors with various hollow core shapes, such as rectangular
and triangular.
One such concept gaining attention is the three-dimensional stacking of device layers,
which has become increasingly important due to the challenges in scaling down devices.
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Using this technique, the team successfully fabricated the highest stacked organic
transistors (a three-dimensional organic integrated circuit comprising five transistors and
20 metal layers) in a solvent-free manner. These transistors exhibit exceptional
characteristics, including a high on/off current ratio of approximately 107, absence of
hysteresis behavior, and outstanding device-to-device uniformity.
Fin Field-Effect Transistors (FinFETs) technology has revolutionized the chip industry,
with major companies investing heavily. Unlike conventional methods using a planar
channel, FinFETs employ a fin-shaped channel standing vertically from the substrate.
This design offers superior control over transistor behavior, as the channel is surrounded
by gate electrodes on three sides. The gate structure includes a gate oxide layer, a gate
electrode, and a gate insulator.12 When a voltage is applied to the gate electrode, it
creates an electric field in the channel region, controlling the flow of current through the
channel.
The unique FinFET design allows better electrostatic control of the channel, reducing
leakage current and enhancing overall transistor performance.
Machine learning models are also used in materials discovery and chip design For
example, supervised learning models uncover connections between semiconductor
materials and their properties, enabling quick predictions of relevant properties for
potential candidates. This accelerates the discovery of novel materials for
superconducting applications.
Over time, these digital technologies will play a crucial role in semiconductor
manufacturing and design, leading to novel innovations.
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[2] Singh, Z. (2023). The Power of Semiconductor Materials Paving the Way for
Technological Advancements. Advanced Materials Science Research.
doi.org/10.37532/aaasmr.2023.6(4).67-69
[3] Singh, M., et al. (2023). Semiconductors and the Semiconductor Industry. [Online]
Congressional Research Service. Available at: https://sgp.fas.org/crs/misc/R47508.pdf
(Accessed on April 30 2024)
[4] Ossila. (2024). How Do Semiconductors Work?. [Online] Ossila. Available at:
https://www.ossila.com/pages/how-semiconductors-
work#:~:text=How%20Do%20Semiconductors%20Work%3F,can%20be%20conductive%
20or%20insulating (Accessed on April 30 2024)
[5] Pan, Y. (2024). Prediction of the Structural, Mechanical, and Physical Properties of
GaC: As a Potential Third-Generation Semiconductor Material. Inorganic Chemistry.
doi.org/10.1021/acs.inorgchem.4c00523
[6] Wang, S., et al. (2024). Advanced Inorganic Semiconductor Materials. Inorganics.
doi.org/10.3390/inorganics12030081
[7] Beadle, A. (2024). Researchers Create World’s First Functional Semiconductor Made
From Graphene. [Online] Technology Networks Applied Sciences. Available at:
https://www.technologynetworks.com/applied-sciences/news/researchers-create-worlds-
first-functional-semiconductor-made-from-graphene-382460
(Accessed on May 1 2024)
[8] Zhao, J., et al. (2024). Ultrahigh-mobility semiconducting epitaxial graphene on silicon
carbide. Nature. doi.org/10.1038/s41586-023-06811-0
[9] Wang, Z., et al. (2024). High-quality semiconductor fibres via mechanical design.
Nature. doi.org/10.1038/s41586-023-06946-0
[10] Nguyen, A., et al. (2024). Formation techniques for upper active channel in
monolithic 3D integration: an overview. Nano Convergence. doi.org/10.1186/s40580-023-
00411-4
[11] Yoo, H., et al. (2019). Highly stacked 3D organic integrated circuits with via-hole-less
multilevel metal interconnects. Nat Commun. doi.org/10.1038/s41467-019-10412-9
[12] Anysilicon. (2023). FinFETs: The Ultimate Guide. [Online] Anysilicon. Available at:
https://anysilicon.com/finfets-the-ultimate-guide/ (Accessed on May 1 2024)
[13] Yang, X., et al. (2024). Methods and applications of machine learning in
computational design of optoelectronic semiconductors. Sci. China Mater.
doi.org/10.1007/s40843-024-2851-9
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Written by
Ibtisam Abbasi
Ibtisam graduated from the Institute of Space Technology, Islamabad with a B.S. in
Aerospace Engineering. During his academic career, he has worked on several research
projects and has successfully managed several co-curricular events such as the
International World Space Week and the International Conference on Aerospace
Engineering. Having won an English prose competition during his undergraduate
degree, Ibtisam has always been keenly interested in research, writing, and editing.
Soon after his graduation, he joined AzoNetwork as a freelancer to sharpen his skills.
Ibtisam loves to travel, especially visiting the countryside. He has always been a sports
fan and loves to watch tennis, soccer, and cricket. Born in Pakistan, Ibtisam one day
hopes to travel all over the world.
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