TrenchT2TM IXTA220N04T2 VDSS = 40V

Power MOSFET IXTP220N04T2 ID25 = 220A

RDS(on) Ω
≤ 3.5mΩ

N-Channel Enhancement Mode

Avalanche Rated
TO-263

G
S
Symbol Test Conditions Maximum Ratings
(TAB)
VDSS TJ = 25°C to 175°C 40 V
TO-220
VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V
VGSM Transient ± 20 V
ID25 TC = 25°C 220 A
ILRMS Lead Current Limit, RMS 120 A
G
IDM TC = 25°C, Pulse Width Limited by TJM 660 A D
S (TAB)
IA TC = 25°C 110 A
EAS TC = 25°C 600 mJ
G = Gate D = Drain
PD TC = 25°C 360 W S = Source TAB = Drain
TJ -55 ... +175 °C
TJM 175 °C
Features
Tstg -55 ... +175 °C
z
TL 1.6mm (0.062in.) from Case for 10s 300 °C International Standard Packages
z
TSOLD Plastic Body for 10 Seconds 260 °C 175°C Operating Temperature
z
High Current Handling Capability
Md Mounting Torque ( TO-220 ) 1.13/10 Nm/lb.in. z
Avalanche Rated
Weight TO-263 2.5 g z
Low RDS(on)
TO-220 3.0 g

Advantages
Symbol Test Conditions Characteristic Values z
Easy to Mount
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. z
Space Savings
z
BVDSS VGS = 0V, ID = 250μA 40 V High Power Density

VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V

IGSS VGS = ± 20V, VDS = 0V ±200 nA Applications

IDSS VDS = VDSS 5 μA • Synchronous Buck Converters

VGS = 0V TJ = 150°C 50 μA • High Current Switching Power
Supplies
RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 2.8 3.5 mΩ
• Battery Powered Electric Motors
• Resonant-Mode Power Supplies
• Electronics Ballast Application
• Class D Audio Amplifiers

© 2008 IXYS CORPORATION, All rights reserved DS99918C(11/08)

 IXTA220N04T2
IXTP220N04T2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. TO-263 (IXTA) Outline

gfs VDS = 10V, ID = 60A, Note 1 40 66 S

Ciss 6820 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1185 pF
Crss 250 pF
td(on) 15 ns
Resistive Switching Times
tr 21 ns
VGS = 10V, VDS = 20V, ID = 50A
td(off) 31 ns
RG = 3.3Ω (External)
tf 21 ns
Qg(on) 112 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 nC
Qgd 30 nC
RthJC 0.42 °C/W
RthCH TO-220 0.50 °C/W

Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 220 A
ISM Repetitive, Pulse Width Limited by TJM 660 A
VSD IF = 50A, VGS = 0V, Note 1 1.1 V
trr 45 ns TO-220 (IXTP) Outline
IF = 110A, VGS = 0V
IRM -di/dt = 100A/μs 1.4 A
QRM VR = 20V 32 nC

Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

2. On Through-Hole Packages, RDS(on) Kelvin Test Contact
Location must be 5mm or Less from the Package Body.

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXTA220N04T2
IXTP220N04T2
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
220 350
VGS = 15V VGS = 15V
200 10V
10V
300 9V 8V
180 9V
8V
160 250
140 7V
ID - Amperes

ID - Amperes
200
120 7V
100
150
80 6V
6V
60 100

40
5V 50
20 5V
0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Volts VDS - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 110A Value

@ 150ºC vs. Junction Temperature
220 2.0
VGS = 15V
200 VGS = 10V
10V
1.8
180 9V
8V
160 1.6
RDS(on) - Normalized

I D = 220A
140 7V I D = 110A
ID - Amperes

1.4
120

100 6V 1.2
80

60 1.0

40 5V
0.8
20

0 0.6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 110A Value

Fig. 6. Drain Current vs. Case Temperature
vs. Drain Current
2.2 130

VGS = 10V 120

2.0 15V - - - - 110 External Lead Current Limit

100
TJ = 175ºC
RDS(on) - Normalized

1.8 90
ID - Amperes

80
1.6
70
60
1.4
50
40
1.2
TJ = 25ºC 30

1.0 20
10
0.8 0
0 40 80 120 160 200 240 280 320 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes TC - Degrees Centigrade

© 2008 IXYS CORPORATION, All rights reserved

 IXTA220N04T2
IXTP220N04T2

Fig. 7. Input Admittance Fig. 8. Transconductance

160 120
TJ = - 40ºC
140
100

120
25ºC
80

g f s - Siemens
ID - Amperes

100
150ºC
80 60

TJ =150ºC
60
25ºC 40
- 40ºC
40
20
20

0 0
2.5 3 3.5 4 4.5 5 5.5 6 6.5 0 20 40 60 80 100 120 140 160
VGS - Volts ID - Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode Fig. 10. Gate Charge
300 10
VDS = 20V
270 9
I D = 110A
240 8 I G = 10mA

210 7
IS - Amperes

180 6
VGS - Volts

150 5

120 4

90 3
TJ = 150ºC
60 TJ = 25ºC 2

30 1

0 0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 80 100 120
VSD - Volts QG - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

100,000 1,000
RDS(on) Limit
f = 1 MHz
25µs
Capacitance - PicoFarads

10,000 Ciss 100 100µs

I D - Amperes

External Lead Limit

1ms

Coss

1,000 10
10ms
TJ = 175ºC DC 100ms
Crss
TC = 25ºC
Single Pulse
100 1
0 5 10 15 20 25 30 35 40 1 10 100
VDS - Volts VDS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: T_220N04T2(V5) 12-15-08-D

 IXTA220N04T2
IXTP220N04T2
Fig. 13. Resistive Turn-on Fig. 14. Resistive Turn-on
Rise Time vs. Junction Temperature Rise Time vs. Drain Current
28 28

27 RG = 3.3Ω 27 RG = 3.3Ω
26 VGS = 10V VGS = 10V
26
25 VDS = 20V VDS = 20V
25
t r - Nanoseconds

t r - Nanoseconds
24
TJ = 125ºC
23 24

22 23
I D = 110A
21 22
TJ = 25ºC
20
21
19 I D = 220A
20
18
17 19

16 18
25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 120 140 160 180 200
TJ - Degrees Centigrade ID - Amperes

Fig. 15. Resistive Turn-on Fig. 16. Resistive Turn-off

Switching Times vs. Gate Resistance Switching Times vs. Junction Temperature
130 70 36 42

120 65 34 tf td(off) - - - - 40
tr td(on) - - - -
110 60 32 RG = 3.3Ω, VGS = 10V 38
TJ = 125ºC, VGS = 10V
100 VDS = 20V 55 30 VDS = 20V 36
t d(on) - Nanoseconds

t d(off) - Nanoseconds
90 50
t f - Nanoseconds

28 34
t r - Nanoseconds

80 45
26 I D = 220A 32
70 40
24 30
60 35
22 28
50 I D = 220A, 110A 30
20 I D = 110A 26
40 25
18 24
30 20
16 22
20 15
10 10 14 20

0 5 12 18
2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125
RG - Ohms TJ - Degrees Centigrade

Fig. 17. Resistive Turn-off Fig. 18. Resistive Turn-off

Switching Times vs. Drain Current Switching Times vs. Gate Resistance
42 50 200 200

tf td(off) - - - - 180 tf td(off) - - - - 180

38 46 TJ = 125ºC, VGS = 10V
RG = 3.3Ω, VGS = 10V 160 160
VDS = 20V
VDS = 20V
t d(off) - Nanoseconds
t d(off) - Nanoseconds

34 42 140 140
t f - Nanoseconds
t f - Nanoseconds

120 120
30 38
TJ = 125ºC
100 100
26 34 80 80
I D = 110A
60 60
22 30
40 40
18 26 I D = 220A
20 20
TJ = 25ºC
14 22 0 0
40 60 80 100 120 140 160 180 200 2 4 6 8 10 12 14 16 18 20

ID - Amperes RG - Ohms

© 2008 IXYS CORPORATION, All rights reserved

 IXTA220N04T2
IXTP220N04T2

Fig. 19. Maximum Transient Thermal Impedance

1.00
Z (th)JC - ºC / W

0.10

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: T_220N04T2(V5) 12-15-08-D