NIKO-SEM N-Channel Logic Level Enhancement P2504BDG

Mode Field Effect Transistor TO-252 (DPAK)

Halogen-Free & Lead-Free

D
PRODUCT SUMMARY
1. GATE
V(BR)DSS RDS(ON) ID 2. DRAIN
G
40V 25mΩ 32A 3. SOURCE

S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
TC = 25 °C 32
Continuous Drain Current ID
TC = 100 °C 20
1
A
Pulsed Drain Current IDM 70
Avalanche Current IAS 17
Avalanche Energy L = 0.3mH EAS 44 mJ
TC = 25 °C 41.6
Power Dissipation PD W
TC = 100 °C 16.6
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS

Junction-to-Case RθJc 3 °C / W

Junction-to-Ambient RθJA 75 °C / W
1
Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.7 1.9 2.5
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = 32V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30V, VGS = 0V, TC = 125 °C 10
1
On-State Drain Current ID(ON) VDS = 10V, VGS = 10V 70 A

Drain-Source On-State VGS = 5V, ID = 10A 27 45

1 RDS(ON) mΩ
Resistance VGS = 10V, ID = 12A 21 25

REV 1.5 Aug-06-2010

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NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free

1
Forward Transconductance gfs VDS = 10V, ID = 12A 18 S
DYNAMIC
Input Capacitance Ciss 760
Output Capacitance Coss VGS = 0V, VDS = 20V, f = 1MHz 165 pF
Reverse Transfer Capacitance Crss 110
2
Total Gate Charge Qg 16
2 VDS = 0.5V(BR)DSS, VGS = 10V,
Gate-Source Charge Qgs 2.5 nC
Gate-Drain Charge
2
Qgd ID = 12A 2.1
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 3 Ω
2
Turn-On Delay Time td(on) 2.1 4.2
2
Rise Time tr VDS = 20V, RL = 1Ω 7.2 14
nS
2
Turn-Off Delay Time td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω 11.6 21.0
2
Fall Time tf 3.5 7.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 32 A
1
Forward Voltage VSD IF = 12A, VGS = 0V 1.2 V
Reverse Recovery Time trr 14.5 nS
IF = 5 A, dlF/dt = 100A / µS
Reverse Recovery Charge Qrr 7.2 nC
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature.

REMARK: THE PRODUCT MARKED WITH “P2504BDG”, DATE CODE or LOT #

REV 1.5 Aug-06-2010

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NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free

Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T C = 125°C
10
Is - Reverse Drain Current(A)

25°C
1

0.1 -55°C

0.01

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Body Diode Forward Voltage(V)

REV 1.5 Aug-06-2010

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NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free

Safe Operating Area Single Pulse Maximun Power dissipation

100
600

500 SINGLE PULSE

˚ C/W
RθJC = 3˚
ID , Drain Current [A]

T C=25˚˚C
↓ 400
Operation in
100us
This Area is
Power(W)

10 Lim ited by
300
RDS(ON)

200

NOTE :
1.V GS= 10V
1m s
2.TC =25˚˚C 100
˚ C/W
3.RθJC = 3˚
10m s
4.Single Pulse
DC
1 0
1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS , Drain-Source Voltage [V] Sigle Puls e Tim e (s)

REV 1.5 Aug-06-2010

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NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free

REV 1.5 Aug-06-2010

5
NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free

REV 1.5 Aug-06-2010

6
NIKO-SEM N-Channel Logic Level Enhancement P2504BDG
Mode Field Effect Transistor TO-252 (DPAK)
Halogen-Free & Lead-Free

REV 1.5 Aug-06-2010

7